CN106744665A - A kind of interconnecting method of micro-system three-dimension packaging - Google Patents
A kind of interconnecting method of micro-system three-dimension packaging Download PDFInfo
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- CN106744665A CN106744665A CN201611072111.9A CN201611072111A CN106744665A CN 106744665 A CN106744665 A CN 106744665A CN 201611072111 A CN201611072111 A CN 201611072111A CN 106744665 A CN106744665 A CN 106744665A
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- 239000000758 substrate Substances 0.000 claims description 91
- 239000011148 porous material Substances 0.000 claims description 29
- 239000010931 gold Substances 0.000 claims description 18
- 230000000306 recurrent effect Effects 0.000 claims description 16
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 15
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- 238000004544 sputter deposition Methods 0.000 claims description 15
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 26
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
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- 239000004327 boric acid Substances 0.000 description 5
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 5
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 5
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 4
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C3/00—Assembling of devices or systems from individually processed components
- B81C3/001—Bonding of two components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention provides a kind of interconnecting method of micro-system three-dimension packaging.The present invention realizes the thermocompression bonding technique of low-temp low-pressure based on nano-interface special scale effect, current crowding effect, electromigration effect under the effect of orderly periodically power electric heating multiple physical field load, reduces interface bond defect.The method is simple to operate, compatible with microelectronic technique, has wide application prospect in fields such as the three-dimensionally integrated encapsulation of micro-system, integrated optoelectronic devices.
Description
Technical field
The invention belongs to micro electro-mechanical system packaging field of interconnection technologies, and in particular to a kind of interconnection of micro-system three-dimension packaging
Method.
Background technology
With minute mechanical and electrical system and microelectronic chip is integrated, multifunction demand for development, three-dimension packaging will be by will
Even device power, heat, an electrical interconnection in vertical direction, reduces the size and weight of micro-system, and by shortening interconnecting channel
Length reduces signal delay, strengthens heat conduction efficiency, is increasingly becoming the important development direction of micro-system encapsulation technology.Traditional is mutual
Even technology includes the method such as Si V groove, silicon-glass anodic bonding, but as the interconnection technique suitable for three-dimension packaging,
In addition to meeting structure connection requirement, high efficiency conduction and heat conduction requirement are also met, as energy exchange between device and letter
Number transmission passage.Therefore, it is principal mode that metal is interconnected into device three-dimensional integration packaging.Most commonly thermocompression bonding
Method, under certain pressure and temperature action, effectively connection is realized using interatomic phase counterdiffusion, but temperature is more at 300 DEG C
More than, pressure is more than 10MPa, and device performance and life-span are adversely affected.
The content of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of interconnecting method of micro-system three-dimension packaging,
The present invention realizes device interconnection under the conditions of relatively low temperature and pressure, enhances bonding technology reliability.
The invention provides a kind of interconnecting method of micro-system three-dimension packaging, comprise the following steps：
A two devices for being compounded with metallic substrates) are obtained in two bonding target face splash-proofing sputtering metals of device respectively；
B the metal substrate surface for) being compounded with the device of metallic substrates described in wherein is prepared with nano-pore structure
Metal interconnecting layer；
Being prepared in the metal substrate surface that the device of metallic substrates is compounded with described in another, there is metal nano pin to bore knot
The metal interconnecting layer of structure；
C it is) that the metal interconnecting layer with nano-pore structure is mutual with the metal with metal nano pin wimble structure
Even after the relative superposition of layer, the interconnection of device is completed according to following steps：
The first step：Apply ultrasonic vibratory loading to described two metal interconnection layers；
Second step：Apply constant pressure and temperature to described two metal interconnection layers, and connected between two metallic substrates
Recurrent pulses electric current, and each cycle include two with width reverse current pulses；
3rd step：Apply constant pressure and temperature to described two metal interconnection layers；
4th step：Circulation second step and the 3rd step；
In the second step and the 3rd step, the constant pressure is 1~5MPa, and temperature is 80~150 DEG C.
Preferably, step A) in, the metal is gold, and the thickness of the metallic substrates is 20~50nm.
Preferably, it is compounded with the Metal Substrate of the device of metallic substrates described in one wherein using the method for selective corrosion
Basal surface prepares the metal interconnecting layer with nano-pore structure；
Using electrochemical deposition method the device that metallic substrates are compounded with described in another metal substrate surface system
The standby metal interconnecting layer with metal nano pin wimble structure.
Preferably, the thickness of the metal interconnecting layer with nano-pore structure is 100~500nm, the size of nano-pore
30~50nm.
Preferably, a diameter of 100~500nm of the nanoneedle wimble structure bottom surface.
Preferably, the power for applying ultrasonic vibratory loading is 15~40W, and the time is 2~5 seconds.
Preferably, the recurrent pulses current amplitude is 10~100 amperes, and 1~2 millisecond of pulsewidth, frequency is more than 50 hertz
Hereby, the recurrent pulses electric current application time is 10~30 seconds.
Preferably, the duration of the 3rd step is 2~6 minutes.
Preferably, the time of the circulation second step and the 3rd step is 30~80 minutes.
Preferably, it is to the specific method of described two metal interconnection layers applying constant pressure and temperature：
By two hot plates be superimposed on respectively two be compounded with the outer layer of the device of metal interconnection layer/metallic substrates after, hot plate
Two devices for being compounded with metal interconnection layer/metallic substrates are heated, while constant pressure perpendicular puts on described two
On individual hot plate.
Compared with prior art, the invention provides a kind of interconnecting method of micro-system three-dimension packaging, comprise the following steps：
A two devices for being compounded with metallic substrates) are obtained in two bonding target face splash-proofing sputtering metals of device respectively；B) wherein one
The metal substrate surface of the individual device for being compounded with metallic substrates prepares the metal interconnecting layer with nano-pore structure；Another
The metal substrate surface of the individual device for being compounded with metallic substrates prepares the metal interconnecting layer with metal nano pin wimble structure；
C it is) that the metal interconnecting layer with nano-pore structure is relative with the metal interconnecting layer with metal nano pin wimble structure
After superposition, the interconnection of device is completed according to following steps：The first step：Apply ultrasonic vibration to described two metal interconnection layers to carry
Lotus；Second step：Apply constant pressure and temperature to described two metal interconnection layers, and connected periodically between two metallic substrates
Pulse current, and each cycle include two with width reverse current pulses；3rd step：Apply permanent to described two metal interconnection layers
Constant-pressure and temperature；4th step：Circulation second step and the 3rd step；In the second step and the 3rd step, the constant pressure is 1
~5MPa, temperature is 80~150 DEG C.The present invention is based on the special scale effect of nano-interface, current crowding effect, electromigration effect
Should, the thermocompression bonding technique of low-temp low-pressure is realized under the effect of orderly periodically power electric heating multiple physical field load, reduce interface
Bonding defects.The method is simple to operate, compatible with microelectronic technique, in the three-dimensionally integrated encapsulation of micro-system, integrated optoelectronic device etc.
Field has wide application prospect.
Brief description of the drawings
The schematic flow sheet of the interconnecting method of the micro-system three-dimension packaging that Fig. 1 is provided for the present invention.
Specific embodiment
The invention provides a kind of interconnecting method of micro-system three-dimension packaging, comprise the following steps：
A two devices for being compounded with metallic substrates) are obtained in two bonding target face splash-proofing sputtering metals of device respectively；
B the metal substrate surface for) being compounded with the device of metallic substrates described in wherein is prepared with nano-pore structure
Metal interconnecting layer；
Being prepared in the metal substrate surface that the device of metallic substrates is compounded with described in another, there is metal nano pin to bore knot
The metal interconnecting layer of structure；
C it is) that the metal interconnecting layer with nano-pore structure is mutual with the metal with metal nano pin wimble structure
Even after the relative superposition of layer, the interconnection of device is completed according to following steps：
The first step：Apply ultrasonic vibratory loading to described two metal interconnection layers；
Second step：Apply constant pressure and temperature to described two metal interconnection layers, and connected between two metallic substrates
Recurrent pulses electric current, and each cycle include two with width reverse current pulses；
3rd step：Apply constant pressure and temperature to described two metal interconnection layers；
4th step：Circulation second step and the 3rd step；
In the second step and the 3rd step, the constant pressure is 1~5MPa, and temperature is 80~150 DEG C.
The present invention obtains two and is compounded with metallic substrates first respectively in two bonding target face splash-proofing sputtering metals of device
Device.
Wherein, the present invention is not specifically limited to the method for the sputtering, well known to a person skilled in the art sputtering side
Method.The metal is preferably gold, and the thickness of the metallic substrates is preferably 20~50nm, more preferably 30~40nm.
Obtain two to be compounded with after the device of metallic substrates, be compounded with the device of metallic substrates described in one wherein
Metal substrate surface prepares the metal interconnecting layer with nano-pore structure；
Being prepared in the metal substrate surface that the device of metallic substrates is compounded with described in another, there is metal nano pin to bore knot
The metal interconnecting layer of structure；
The present invention is mutual to preparing the metal interconnecting layer with nano-pore structure and the metal with metal nano pin wimble structure
Even the preparation order of layer is not limited.
In the present invention, it is preferred to the device of metallic substrates is compounded with described in one wherein using the method for selective corrosion
Metal substrate surface prepare with nano-pore structure metal interconnecting layer.Wherein, the metal with nano-pore structure is mutual
Even the thickness of layer is preferably 100~500nm, more preferably 200~400nm；The size of nano-pore is 30~50nm.
The present invention is not specifically limited to the method for the selective corrosion, preferably carries out as follows：
A) in the metal substrate surface sputtering sedimentation metal copper layer of the device for being compounded with metallic substrates；
B) device that the deposition has metal copper layer is placed in plating solution, in the metal copper layer electroplating surface metal zinc
Layer, obtains the device with metal zinc layers/metal copper layer/metallic substrates；
C) device with metal zinc layers/metal copper layer/metallic substrates is annealed, obtains being closed with Cu-Zn
The device of layer gold/metallic substrates；
D) being placed in the device with Cu-Zn alloy-layers/metallic substrates carries out selective corrosion in corrosive liquid, obtain
The device of the copper metal interconnection layer/metallic substrates with nano-pore structure.
Specifically, the thickness of the metal copper layer is preferably 100~400nm, more preferably 200~300nm.
After obtaining the device of metal copper layer, the device is cleaned, the method for the cleaning is：
Device is placed in 5% HCl solution and cleaned 1-2 minutes, remove oxide on surface, then cleaned with deionized water.
(5% is optium concentration)
After cleaning up, the device that the deposition has metal copper layer is placed in plating solution, in metal copper layer surface electricity
Plating metal zinc layers.Wherein, the plating solution is preferably sal-ammoniac galvanizing solution.The temperature of the plating is preferably 20~30 DEG C, institute
The time for stating plating is 4-5min.The thickness of metal zinc layers is 30~60nm, preferably 40~50nm.
After plating terminates, device is cleaned, it is preferred to use deionized water is cleaned, cleaning uses nitrogen after terminating
Drying.
Then, the device with metal zinc layers/metal copper layer/metallic substrates is annealed, is obtained with Cu-Zn
The device of alloy-layer/metallic substrates.The temperature of the annealing is preferably 150 DEG C, and annealing time is 2-3h.In annealing process,
There is atoms permeating in metal Zn and Cu, obtain Cu-Zn alloys.After annealing terminates, obtain with Cu-Zn alloy-layers/metallic substrates
Device.
After annealing terminates, the device with Cu-Zn alloy-layers/metallic substrates is placed in carries out selectivity in corrosive liquid
Corrosion, obtains the device of the copper metal interconnection layer/metallic substrates with nano-pore structure.
Wherein, during the corrosive liquid preferred mass concentration is 8% NaOH solution, the time of the selective corrosion is 4-
6 hours.By selective corrosion, the Zn in alloy is corroded.
After corrosion terminates, device is cleaned with deionized water, nitrogen drying obtains the copper metal with nano-pore structure mutual
Connect the device of layer/metallic substrates.
Present invention preferably employs electrochemical deposition method the device that metallic substrates are compounded with described in another metal
Substrate surface prepares the metal interconnecting layer with metal nano pin wimble structure.
Before electrochemical deposition is carried out, the metallic substrates are preferably carried out into oil removing and processing of rust removing.Then, will be described
The device for being compounded with metallic substrates is placed in electrochemical deposition is carried out in electroplating solution.
In the present invention, the electroplate liquid includes：1~2mol/L of cupric sulfate pentahydrate, 0.1~0.4mol/L of copper nitrate, second
10~20ppm of 1~4mol/L of diamines, 0.2~0.3mol/L of boric acid, additive SPS, PEG 1000~1500ppm, JGB 30
~50ppm；
Preferably, the electroplate liquid includes：Cupric sulfate pentahydrate 1.5mol/L, copper nitrate 0.2mol/L, ethylenediamine 2mol/L,
Boric acid 0.3mol/L, additive SPS 15ppm, PEG 1000ppm, JGB 40ppm.The solution temperature of the electroplate liquid is preferably
30 DEG C, pH value is 5.0.
When electrochemical deposition is carried out, using metallic substrates as negative electrode, using copper coin or insoluble pole plate as anode, and
Substrate, copper coin and electroplating power supply is set to constitute loop by wire.
DC current is applied to substrate by electroplating power supply, the size of current is preferably 1~3A/dm2, during the plating
Between be preferably 150~300 seconds, after electrochemical deposition terminates, form copper nanoneedle wimble structure layer, obtain being compounded with metal interconnection
The device of layer/metallic substrates.The diameter of the nanoneedle wimble structure bottom surface is preferably 100~500nm, more preferably 200~
400nm.Metal is preferably copper in metal nano pin wimble structure.
Then, by the metal interconnecting layer with nano-pore structure and the metal with metal nano pin wimble structure
After the relative superposition of interconnection layer, the interconnection of device is completed according to following steps：
The first step：Apply ultrasonic vibratory loading to described two metal interconnection layers；
Second step：Apply constant pressure and temperature to described two metal interconnection layers, and connected between two metallic substrates
Recurrent pulses electric current, and each cycle include two with width reverse current pulses；
3rd step：Apply constant pressure and temperature to described two metal interconnection layers；
4th step：Circulation second step and the 3rd step；
In the second step and the 3rd step, the constant pressure is 1~5MPa, and temperature is 80~150 DEG C.
First, ultrasonic vibratory loading, the power of the applying ultrasonic vibratory loading are applied to described two metal interconnection layers
It is 15~40W, preferably 20W, the time is 2~5 seconds.
Then, apply constant pressure and temperature layer by layer to described two metal interconnections, and connected between two metallic substrates
Recurrent pulses electric current, and each cycle include two with width reverse current pulses.
In the present invention, it is to the specific method of described two metal interconnection layers applying constant pressure and temperature：
By two hot plates be superimposed on respectively two be compounded with the outer layer of the device of metal interconnection layer/metallic substrates after, hot plate
Two devices for being compounded with metal interconnection layer/metallic substrates are heated, while constant pressure perpendicular puts on described two
On individual hot plate.
Specifically, two hot plates are superimposed on into two outer layers of the device for being compounded with metal interconnection layer/metallic substrates respectively
Afterwards, hot plate is heated to two devices for being compounded with metal interconnection layer/metallic substrates, and heat transfer is right to metal interconnection layer
Metal interconnection layer is heated, while pressure perpendicular is put on described two hot plates, pressure transmission to metal interconnection layer is to gold
Category interconnection layer is pressed.Wherein, the constant pressure is 1~5MPa, and preferably 2~4MPa, temperature is 80~150 DEG C, excellent
Elect 100~130 DEG C as.
In second step, the present invention also exists while constant pressure and temperature is applied to described two metal interconnection layers
Recurrent pulses electric current is connected between two metallic substrates, and each cycle includes two with width reverse current pulses.
Wherein, the recurrent pulses current amplitude is preferably 10~100 amperes, more preferably 30~70 amperes；Pulsewidth 1
~2 milliseconds, frequency is more than 50 hertz, preferably 50~100 hertz；The recurrent pulses electric current application time is preferably 10~
30 seconds, more preferably 15~25 seconds.
Then, the bonding of the 3rd step is carried out, in the third step, periodically pulsing electric current is cancelled, only to described two gold
Category interconnection layer applies constant pressure and temperature, wherein, it is described that constant pressure and temperature are applied to described two metal interconnection layers
Method as described above, will not be described here.Wherein, the constant pressure is 1~5MPa, and preferably 2~4MPa, temperature is 80
~150 DEG C, preferably 100~130 DEG C.
Wherein, the duration of the 3rd step be preferably 2~6min, more preferably 3~5min.
After 3rd EOS, the step of circulation second step and three steps, the time of the circulation second step and the 3rd step is
30~80 minutes, preferably 40~70 minutes.
The interconnecting method of the micro-system three-dimension packaging provided the present invention with reference to Fig. 1 is described in detail, and Fig. 1 is the present invention
The schematic flow sheet of the interconnecting method of the micro-system three-dimension packaging of offer.
In Fig. 1,1 and 4 is device to be interconnected, and 2 to be compounded in the metallic substrates on device 1, and 5 is to be compounded on device 4
Metallic substrates, 3 is the metal interconnecting layer with nano-pore structure, and 6 is the metal interconnecting layer with metal nano pin wimble structure,
7 is to apply constant pressure to described two metal interconnection layers, and 8 is hot plate.
The present invention first in the surface splash-proofing sputtering metal substrate 2 and metallic substrates 5 of device 1 and device 2, then, in the gold
The surface for belonging to substrate 2 prepares the metal interconnecting layer 3 with nano-pore structure, and being prepared on the surface of the metallic substrates 5 has gold
Belong to the metal interconnecting layer 6 of nanoneedle wimble structure.
The metal interconnecting layer 3 with nano-pore structure is interconnected with the metal with metal nano pin wimble structure
The relative superposition of layer 6, ultrasonic vibratory loading is applied to described two metal interconnection layers, then to described two devices outside superposition heat
Plate, constant pressure and temperature are applied to the metal interconnection layer, and recurrent pulses electric current is connected between two metallic substrates, are connect
Revocation recurrent pulses electric current, constant pressure and temperature are applied to described two metal interconnection layers, be continuously applied constant pressure
While power and temperature, apply and cancel periodically pulsing electric current repeatedly, finally realize the interconnection of device.
Present invention comprehensive utilization power, electricity, the method for thermal coupling realize that metal bonding can effectively reduce bonding temperature and pressure
The introducing of the form electric field such as power, especially constant-current pulse, atoms permeating is promoted using electromigration effect and current crowding effect.Receive
Rice interfacial structure has scale effect and special electricity, mechanics and calorifics effect, and its fusing point is often much lower compared with body material, and
And after nano-contact interface is powered, current crowding effect and electromigration effect can be produced at nano-contact face and hole, it is preceding
Person produces local joule heat, and the latter promotes the diffusion of atom.In consideration of it, constructing nanostructured between bonding radical bottom as bonding
Layer, and applying power, heat and current load in sequence, are possible to effectively reduce the temperature and pressure of thermocompression bonding, circulation
The current impulse of deflecting can be prevented effectively from the deficiency of electromigration effect so that the effect of " electron wind " is more destruction stabilization
Metallic bond, without forming new defect because the duration is long, further, it is every wheel electric field applying process between provide more long
Relaxation time so that system to be obtained and can carry out orderly diffusion after electric field energy and rock-steady structure is formed, and then reduces key
Close defect.
The present invention is based on special scale effect, current crowding effect, the electromigration effect of nano-interface, in periodicity in order
The effect of power electric heating multiple physical field load under realize the thermocompression bonding technique of low-temp low-pressure, reduce interface bond defect.The method
It is simple to operate, it is compatible with microelectronic technique, there is extensive use in fields such as the three-dimensionally integrated encapsulation of micro-system, integrated optoelectronic devices
Prospect.
For a further understanding of the present invention, the interconnection of the micro-system three-dimension packaging provided the present invention with reference to embodiment
Method is illustrated, and protection scope of the present invention is not limited by the following examples.
Embodiment 1
(1) using standard RCA techniques cleaning device 1 and the interconnecting surface of device 4, then by sputtering technology in two devices
Interconnecting surface on respectively deposited metal substrate-layer gold (Au) 2 and 5, thickness is 30nm；
(2) by sputtering technology in the surface deposited cu layer 300nm of layer gold 2, the device that will sputter Cu layers is placed in 5%
Cleaned 1 minute in HCl solution, remove oxide on surface, then cleaned with deionized water, be put into afterwards in sal-ammoniac galvanizing solution,
Zn layers is electroplated on Cu layers at room temperature, electroplating time is 4 minutes.Plating cleans sheet glass after finishing with deionized water, uses nitrogen
It is placed in after drying in annealing furnace and is heat-treated, annealing temperature is 150 DEG C, and soaking time is 2h, is made metal Zn and Cu that atom to occur and expand
Dissipate, obtain Cu-Zn alloys.Device comprising Cu-Zn alloy-layers is put into 8% NaOH solution, is corroded 6 hours, selectivity
Zn in resistant alloy, is then cleaned with deionized water, nitrogen drying, obtains the Porous Cu nanometer that bore hole size is 30-50nm
Structure sheaf 3, the i.e. metal interconnecting layer with nano-pore structure.
(3) interconnecting surface of device 4 is carried out into oil removing and processing of rust removing, is placed in electroplating solution (cupric sulfate pentahydrate 1.5mol/
L, copper nitrate 0.2mol/L, ethylenediamine 2mol/L, boric acid 0.3mol/L, additive SPS15ppm, PEG1000ppm,
JGB40ppm, 30 DEG C of solution temperature, pH value 5.0), and using base material as negative electrode, using copper coin or insoluble pole plate as anode,
And substrate, copper coin and electroplating power supply is constituted loop by wire.DC current (2A/ is implemented to substrate by electroplating power supply
dm2), electroplating time is 180 seconds, forms the metal interconnection layer 6 of copper metal nanoneedle wimble structure.
After (4) two interface alignments of metal interconnecting layer, applying power, heat, electric load are circulated in certain sequence.Process bag
Include：The first step applies ultrasonic vibratory loading at two interfaces of metal interconnection layer, and power is 20W, and continues 3 seconds；Second step exists
Two interfaces of metal interconnection layer apply steady temperature (applying by hot plate 8) and pressure 7, the pressure 2MPa of applying, temperature 90
DEG C, and recurrent pulses electric current is connected in two metallic substrates interlayers, 20 amperes of amplitude, each cycle is reversely electric with width including two
Stream pulse, 1 millisecond of pulsewidth, 100 hertz of frequency continues 20 seconds；3rd step removes pulse current, continues in metal interconnection bed boundary
Applying steady temperature (being applied by hot plate 8) and pressure 7 is carried out 4 minutes, the pressure 2MPa of applying, 90 DEG C of temperature, then, circulation
Second step and the 3rd step are repeated, whole bonding process continues 40 minutes, complete the interconnection of device.
Embodiment 2
(1) using standard RCA techniques cleaning device 1 and the interconnecting surface of device 4, then by sputtering technology in two devices
Interconnecting surface on respectively deposited metal substrate-layer gold (Au) 2 and 5, thickness is 30nm；
(2) by sputtering technology in the surface deposited cu layer 300nm of layer gold 2, the device that will sputter Cu layers is placed in 5%
Cleaned 1 minute in HCl solution, remove oxide on surface, then cleaned with deionized water, be put into afterwards in sal-ammoniac galvanizing solution,
Zn layers is electroplated on Cu layers at room temperature, electroplating time is 4 minutes.Plating cleans sheet glass after finishing with deionized water, uses nitrogen
It is placed in after drying in annealing furnace and is heat-treated, annealing temperature is 150 DEG C, and soaking time is 2h, is made metal Zn and Cu that atom to occur and expand
Dissipate, obtain Cu-Zn alloys.Device comprising Cu-Zn alloy-layers is put into 8% NaOH solution, is corroded 6 hours, selectivity
Zn in resistant alloy, is then cleaned with deionized water, nitrogen drying, obtains the Porous Cu nanometer that bore hole size is 30-50nm
Structure sheaf 3, the i.e. metal interconnecting layer with nano-pore structure.
(3) interconnecting surface of device 4 is carried out into oil removing and processing of rust removing, is placed in electroplating solution (cupric sulfate pentahydrate 1.5mol/
L, copper nitrate 0.2mol/L, ethylenediamine 2mol/L, boric acid 0.3mol/L, additive SPS15ppm, PEG1000ppm,
JGB40ppm, 30 DEG C of solution temperature, pH value 5.0), and using base material as negative electrode, using copper coin or insoluble pole plate as anode,
And substrate, copper coin and electroplating power supply is constituted loop by wire.DC current (2A/ is implemented to substrate by electroplating power supply
dm2), electroplating time is 180 seconds, forms the metal interconnection layer 6 of copper metal nanoneedle wimble structure.
After (4) two interface alignments of metal interconnecting layer, applying power, heat, electric load are circulated in certain sequence.Process bag
Include：The first step applies ultrasonic vibratory loading at two interfaces of metal interconnecting layer, and power is 20W, and continues 2 seconds；Second step exists
Two interfaces of metal interconnecting layer apply steady temperature (applying by hot plate 8) and pressure 7, the pressure 1MPa of applying, temperature 80
DEG C, and recurrent pulses electric current is connected in two metallic substrates interlayers, 10 amperes of amplitude, each cycle is reversely electric with width including two
Stream pulse, 1 millisecond of pulsewidth, 50 hertz of frequency continues 10 seconds；3rd step removes pulse current, continues in metal interconnection bed boundary
Applying steady temperature (being applied by hot plate 8) and pressure 7 is carried out 3 minutes, the pressure 1MPa of applying, 80 DEG C of temperature, then, circulation
Second step and the 3rd step are repeated, whole bonding process continues 30 minutes, complete the interconnection of device.
Embodiment 3
(1) using standard RCA techniques cleaning device 1 and the interconnecting surface of device 4, then by sputtering technology in two devices
Interconnecting surface on respectively deposited metal substrate-layer gold (Au) 2 and 5, thickness is 30nm；
(2) by sputtering technology in the surface deposited cu layer 300nm of layer gold 2, the device that will sputter Cu layers is placed in 5%
Cleaned 1 minute in HCl solution, remove oxide on surface, then cleaned with deionized water, be put into afterwards in sal-ammoniac galvanizing solution,
Zn layers is electroplated on Cu layers at room temperature, electroplating time is 4 minutes.Plating cleans sheet glass after finishing with deionized water, uses nitrogen
It is placed in after drying in annealing furnace and is heat-treated, annealing temperature is 150 DEG C, and soaking time is 2h, is made metal Zn and Cu that atom to occur and expand
Dissipate, obtain Cu-Zn alloys.Device comprising Cu-Zn alloy-layers is put into 8% NaOH solution, is corroded 6 hours, selectivity
Zn in resistant alloy, is then cleaned with deionized water, nitrogen drying, obtains the Porous Cu nanometer that bore hole size is 30-50nm
Structure sheaf 3, the i.e. metal interconnecting layer with nano-pore structure.
(3) interconnecting surface of device 4 is carried out into oil removing and processing of rust removing, is placed in electroplating solution (cupric sulfate pentahydrate 1.5mol/
L, copper nitrate 0.2mol/L, ethylenediamine 2mol/L, boric acid 0.3mol/L, additive SPS15ppm, PEG1000ppm,
JGB40ppm, 30 DEG C of solution temperature, pH value 5.0), and using base material as negative electrode, using copper coin or insoluble pole plate as anode,
And substrate, copper coin and electroplating power supply is constituted loop by wire.DC current (2A/ is implemented to substrate by electroplating power supply
dm2), electroplating time is 180 seconds, forms the metal interconnection layer 6 of copper metal nanoneedle wimble structure.
After (4) two interface alignments of metal interconnecting layer, applying power, heat, electric load are circulated in certain sequence.Process bag
Include：The first step applies ultrasonic vibratory loading at two interfaces of metal interconnecting layer, and power is 20W, and continues 5 seconds；Second step exists
Two interfaces of metal interconnecting layer apply steady temperature (applying by hot plate 8) and pressure 7, the pressure 5MPa of applying, temperature 150
DEG C, and recurrent pulses electric current is connected in two metallic substrates interlayers, 100 amperes of amplitude, each cycle is reverse with width including two
Current impulse, 2 milliseconds of pulsewidth, 100 hertz of frequency continues 30 seconds；3rd step removes pulse current, continues in metal interconnection stratum boundary
Face applies steady temperature (applying by hot plate 8) and pressure 7 to be carried out 5 minutes, the pressure 5MPa of applying, 150 DEG C of temperature, then,
Circulating repetition second step and the 3rd step, whole bonding process continue 80 minutes, complete the interconnection of device.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (10)
1. a kind of interconnecting method of micro-system three-dimension packaging, it is characterised in that comprise the following steps：
A two devices for being compounded with metallic substrates) are obtained in two bonding target face splash-proofing sputtering metals of device respectively；
B the metal substrate surface for) being compounded with the device of metallic substrates described in wherein prepares the gold with nano-pore structure
Category interconnection layer；
Prepared with metal nano pin wimble structure in the metal substrate surface that the device of metallic substrates is compounded with described in another
Metal interconnecting layer；
C) by the metal interconnecting layer with nano-pore structure and the metal interconnecting layer with metal nano pin wimble structure
After relative superposition, the interconnection of device is completed according to following steps：
The first step：Apply ultrasonic vibratory loading to described two metal interconnection layers；
Second step：Apply constant pressure and temperature to described two metal interconnection layers, and the cycle is connected between two metallic substrates
Property pulse current, and each cycle include two with width reverse current pulses；
3rd step：Apply constant pressure and temperature to described two metal interconnection layers；
4th step：Circulation second step and the 3rd step；
In the second step and the 3rd step, the constant pressure is 1~5MPa, and temperature is 80~150 DEG C.
2. interconnected method according to claim 1, it is characterised in that step A) in, the metal is gold, the Metal Substrate
The thickness at bottom is 20~50nm.
3. interconnected method according to claim 1, it is characterised in that using the method institute wherein of selective corrosion
The metal substrate surface for stating the device for being compounded with metallic substrates prepares the metal interconnecting layer with nano-pore structure；
Tool is prepared in the metal substrate surface that the device of metallic substrates is compounded with described in another using the method for electrochemical deposition
There is the metal interconnecting layer of metal nano pin wimble structure.
4. interconnected method according to claim 1, it is characterised in that the metal interconnecting layer with nano-pore structure
Thickness is 100~500nm, the 30~50nm of size of nano-pore.
5. interconnected method according to claim 1, it is characterised in that a diameter of the 100 of the nanoneedle wimble structure bottom surface
~500nm.
6. low-temperature bonding method according to claim 1, it is characterised in that the power of the applying ultrasonic vibratory loading is
15~40W, the time is 2~5 seconds.
7. low-temperature bonding method according to claim 1, it is characterised in that the recurrent pulses current amplitude is 10~
100 amperes, 1~2 millisecond of pulsewidth, frequency is more than 50 hertz, and the recurrent pulses electric current application time is 10~30 seconds.
8. low-temperature bonding method according to claim 1, it is characterised in that the duration of the 3rd step is 2~6 points
Clock.
9. low-temperature bonding method according to claim 1, it is characterised in that the time of the circulation second step and the 3rd step
It is 30~80 minutes.
10. low-temperature bonding method according to claim 1, it is characterised in that apply permanent to described two metal interconnection layers
The specific method of constant-pressure and temperature is：
By two hot plates be superimposed on respectively two be compounded with the outer layer of the device of metal interconnection layer/metallic substrates after, hot plate is to two
The individual device for being compounded with metal interconnection layer/metallic substrates is heated, while constant pressure perpendicular puts on described two heat
On plate.
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