CN106835084A - A kind of method for realizing that bond wireization is modified on semiconductor bare chip - Google Patents
A kind of method for realizing that bond wireization is modified on semiconductor bare chip Download PDFInfo
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- CN106835084A CN106835084A CN201710114388.1A CN201710114388A CN106835084A CN 106835084 A CN106835084 A CN 106835084A CN 201710114388 A CN201710114388 A CN 201710114388A CN 106835084 A CN106835084 A CN 106835084A
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- bare chip
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims abstract description 31
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims abstract description 104
- 238000007747 plating Methods 0.000 claims abstract description 53
- 239000010931 gold Substances 0.000 claims abstract description 47
- 239000000126 substance Substances 0.000 claims abstract description 28
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical group [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 24
- 239000011701 zinc Substances 0.000 claims abstract description 24
- 230000004913 activation Effects 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 17
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 16
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 230000007797 corrosion Effects 0.000 claims abstract description 13
- 238000005260 corrosion Methods 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 4
- 239000011259 mixed solution Substances 0.000 claims abstract description 4
- 239000000243 solution Substances 0.000 claims description 46
- 229910052737 gold Inorganic materials 0.000 claims description 37
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 33
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- 230000003213 activating effect Effects 0.000 claims description 16
- -1 dichloro diaminourea palladium salt Chemical class 0.000 claims description 13
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- GEHJYWRUCIMESM-UHFFFAOYSA-L sodium sulfite Chemical compound [Na+].[Na+].[O-]S([O-])=O GEHJYWRUCIMESM-UHFFFAOYSA-L 0.000 claims description 12
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- VZOPRCCTKLAGPN-ZFJVMAEJSA-L potassium;sodium;(2r,3r)-2,3-dihydroxybutanedioate;tetrahydrate Chemical compound O.O.O.O.[Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O VZOPRCCTKLAGPN-ZFJVMAEJSA-L 0.000 claims description 8
- 229940074446 sodium potassium tartrate tetrahydrate Drugs 0.000 claims description 8
- 229910021538 borax Inorganic materials 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 235000010265 sodium sulphite Nutrition 0.000 claims description 6
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 6
- 239000004328 sodium tetraborate Substances 0.000 claims description 6
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 6
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- JEOOVNWNJKBHRG-UHFFFAOYSA-N [Na+].[S--].[S--].[Au+3] Chemical compound [Na+].[S--].[S--].[Au+3] JEOOVNWNJKBHRG-UHFFFAOYSA-N 0.000 claims description 5
- 235000019270 ammonium chloride Nutrition 0.000 claims description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 5
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 claims description 5
- 239000007864 aqueous solution Substances 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 4
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 4
- 241000080590 Niso Species 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 78
- 229910052763 palladium Inorganic materials 0.000 abstract description 46
- 229910052759 nickel Inorganic materials 0.000 abstract description 35
- 238000005516 engineering process Methods 0.000 abstract description 14
- 238000002386 leaching Methods 0.000 abstract description 11
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 9
- 238000001465 metallisation Methods 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 230000006641 stabilisation Effects 0.000 abstract description 3
- 238000011105 stabilization Methods 0.000 abstract description 3
- 230000001568 sexual effect Effects 0.000 abstract description 2
- 241000218202 Coptis Species 0.000 abstract 2
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 16
- 238000001994 activation Methods 0.000 description 14
- 238000003466 welding Methods 0.000 description 12
- 230000006872 improvement Effects 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 244000247747 Coptis groenlandica Species 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910000765 intermetallic Inorganic materials 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- 241001657258 Pachycare flavogriseum Species 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000004026 adhesive bonding Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000008139 complexing agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- 241000416536 Euproctis pseudoconspersa Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 206010035148 Plague Diseases 0.000 description 1
- 206010037549 Purpura Diseases 0.000 description 1
- 241001672981 Purpura Species 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 241000607479 Yersinia pestis Species 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- BBKFSSMUWOMYPI-UHFFFAOYSA-N gold palladium Chemical compound [Pd].[Au] BBKFSSMUWOMYPI-UHFFFAOYSA-N 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000006263 metalation reaction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- BSIDXUHWUKTRQL-UHFFFAOYSA-N nickel palladium Chemical compound [Ni].[Pd] BSIDXUHWUKTRQL-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- ZWZLRIBPAZENFK-UHFFFAOYSA-J sodium;gold(3+);disulfite Chemical compound [Na+].[Au+3].[O-]S([O-])=O.[O-]S([O-])=O ZWZLRIBPAZENFK-UHFFFAOYSA-J 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/03—Manufacturing methods
- H01L2224/034—Manufacturing methods by blanket deposition of the material of the bonding area
- H01L2224/0341—Manufacturing methods by blanket deposition of the material of the bonding area in liquid form
- H01L2224/03426—Chemical solution deposition [CSD], i.e. using a liquid precursor
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrochemistry (AREA)
- Chemically Coating (AREA)
Abstract
A kind of method for realizing that bond wireization is modified on semiconductor bare chip, semiconductor bare chip surface after oil removing or wafer are put into mixed solution of the sulfuric acid with hydrogen peroxide, water after 60 90s is reacted at 30 40 DEG C, acid corrosion carries out secondary zinc activation again after carrying out a zinc activation, and the bare chip or crystal column surface after being activated by secondary zinc carry out deposition and form Ni layers；Pd layers is deposited on Ni layers；Au layers is deposited on Pd layers.The present invention uses chemical nickel plating palladium gold-leaching technology, the NiPdAu three-layer metalization layer of compatible gold thread bonding is prepared on semiconductor bare chip surface, film adhesion and the application demand of stabilization sexual satisfaction packaging technology, modified chip items electrical parameter with contrast no significant difference before modified, the gold thread bonding that NiPdAu layer surface after modification is carried out can meet the reliability requirement that hot environment application and device long-life use.
Description
Technical field
The invention belongs to field of semiconductor package, and in particular to one kind realizes that bond wire changes on semiconductor bare chip
The method of property.
Background technology
At present, use aluminum and aluminum alloy mateial semiconductor chip surface metal layer more, and integrated circuit and hybrid integrated
The semiconductor packages such as circuit mainly use gold thread Heat Ultrasonic Bonding interconnection process, and this results in bare chip surface in bonding
After form gold-aluminium compound alloy-layer.
Existing research and reliability test result show that the golden heterogeneous bonding point of aluminium is in 300 DEG C and the temperature conditionss of the above
Under, bonding point Performance Decay occurs in very short time, bonding point can be caused to come off when serious and then cause component failure.Make
Main cause into this phenomenon is that the atoms permeating speed of the heterogeneous bonding point interfaces of Au-Al becomes big under high temperature, in interface
The quick interfacial reaction of generation, and then generate blocked up intermetallic compound.The chemical combination that Au-Al bonded interfaces are formed under high temperature
Thing, predominantly AuAl2(" purple plague purpura "), Au5Al2(" hickie "), in addition with AuAl, Au4Al、Au2Al etc..These metallic compounds
Itself device performance can't be caused damage, but their appearance indicates the reliability reduction of solder joint.Because this
A little gold Al intermetallics are brittlement phase, and mechanical performance and hot property are dramatically different with Au, Al, hold under extraneous stress
It is easy to crack, and then cause solder joint to be opened a way, cause electronic device to fail.
In view of the above circumstances, the heterogeneous bonding technology of generally existing has been difficult to meet high reliability in semiconductor packing device
The reliability requirement of component and high temperature application component.
The content of the invention
To overcome the problems of the prior art, key is realized on semiconductor bare chip it is an object of the invention to provide one kind
The method for closing metalized modified.
To achieve the above object, the present invention is adopted the following technical scheme that：
A kind of method for realizing that bond wireization is modified on semiconductor bare chip, comprises the following steps：
1) microetch：Semiconductor bare chip surface after oil removing or wafer are put into the mixed solution of sulfuric acid and hydrogen peroxide
In, washed after reacting 60-90s at 30-40 DEG C；
2) a zinc activation：By through step 1) the semiconductor bare chip surface of microetch or wafer use activating solution, in reaction
Temperature be 20-30 DEG C at activate 30-40s；
3) acid corrosion：After zinc activation, acid corrosion is carried out, zine corrosion is fallen；
4) secondary zinc activation：By through step 3) element after acid corrosion uses the activating solution to be carried out in the case where temperature is for 20-30 DEG C
Activation 15-20s, then washes；
5) Electroless Plating Ni：Using plating solution, bare chip or crystal column surface after being activated by secondary zinc carry out deposition and form 2
μm~Ni layers of 4 μm；
6) chemical plating Pd：Using plating solution, Pd layers is deposited on Ni layers, thickness is 0.2 μm~0.5 μm；
7) gold is soaked：Using plating solution, Au layers is deposited on Pd layers, thickness is：0.05 μm~0.1 μm, then wash, dry.
Of the invention further improvement be, step 1) in the mass concentration of sulfuric acid be 18.4mol/L, sulfuric acid and hydrogen peroxide
Volume ratio be (80-100) mL：(80-90)mL.
Of the invention further improvement be, step 3) in acid corrosion be specifically the immersion in aqueous solution of nitric acid is immersed in
Washed after 15-30s；Wherein, aqueous solution of nitric acid is by volume 1:1 nitric acid is added to the water it is prepared.
Of the invention further improvement be, step 2) and step 4) in activating solution be by NaOH, zinc oxide,
Ferric trichloride and sodium potassium tartrate tetrahydrate be added to the water it is prepared, and in activating solution NaOH concentration be 500-600g/L,
Oxidation zinc concentration is 90-100g/L, and the concentration of ferric trichloride is 1g/L, and the concentration of sodium potassium tartrate tetrahydrate is 10g/L.
Of the invention further improvement be, step 5) in plating solution be by NiSO4With H3BO3It is added to the water prepared, and
NiSO in plating solution4Concentration be 300g/L, H3BO3Concentration be 40g/L.
Of the invention further improvement be, step 5) in deposited with the speed of 0.2 μm -0.3 μm/min.
Of the invention further improvement be, step 6) in plating solution be by dichloro diaminourea palladium salt, ammonium chloride, ammoniacal liquor and
NH4OH is added to the water prepared, and the concentration of dichloro diaminourea palladium salt is 20~40g/L in plating solution, and the concentration of ammonium chloride is
10~20g/L, the mass concentration of ammoniacal liquor is 25%, NH4The concentration of OH is 40~60g/L.
Of the invention further improvement be, step 6) in deposited under the speed of 0.05 μm -0.1 μm/min.
Of the invention further improvement be, step 7) in plating solution be by gold sodium sulfide, sodium sulfite, sodium thiosulfate
And borax is added to the water prepared, and in plating solution, the concentration of gold sodium sulfide is 2g/L, and the concentration of sodium sulfite is 15/
L, the concentration of sodium thiosulfate is 12.5g/L, and the concentration of borax is 10g/L.
Of the invention further improvement be, step 7) in deposited under the speed of 0.01 μm/min.
Compared with prior art, the device have the advantages that：
The present invention adds the effect of very thin chemical palladium layers mainly to have two aspects between electroless nickel layer and leaching layer gold：
(1) stop the diffusion and migration of nickel, prevent the generation of black disk.In welding, after very thin layer gold fuses into solder rapidly, due to palladium
Fusing point it is high, welding when palladium fusing speed than gold it is slow a lot, the palladium of melting can form one layer of barrier layer in nickel surface can
The generation of cupro-nickel metal oxide is prevented, so as to improve welding performance.(2) because the palladium layers of hardness is bigger are present, can make
Layer gold thickness is significantly reduced, and can so improve the reliability of pad, and preferable anti-wear performance can be obtained again and gold thread is beaten
Performance, is suitably applied on the product of high connecting reliability.
Nickel dam mainly plays welding in the present invention.In welding process, very thin gold and palladium will be fused into solder in succession
In, and exposed and fresh nickel dam just forms intermetallic compounds, the welding for having been formed and reliability with the tin in solder.By gold
After layer, palladium layers are peeled off, but there is space between nickel dam crystal boundary, compactness is poor compared with palladium layers, therefore it is fine and close that last layer is plated on nickel dam
Palladium layers, can effectively stop attack of the golden chemical medicinal liquid of leaching to nickel face, it is to avoid the generation of nickel dam black pad defect.
The present invention uses chemical nickel plating palladium gold-leaching technology, and the nickel palladium of compatible gold thread bonding is prepared on semiconductor bare chip surface
The application demand of golden three-layer metalization layer, film adhesion and stabilization sexual satisfaction packaging technology, the every electricity ginseng of modified chip
Count and contrast no significant difference before modified, while the heterogeneous bonding structure of gold-aluminium of the generally existing in packaging technology is avoided,
The gold thread bonding that modified NiPdAu layer surface is carried out can meet the reliability that hot environment application and device long-life use
Property demand.The heterogeneous bonding structure of gold-aluminium of original bare chip surface generally existing is modified as Jin-gold homogeneity bonding by the present invention
Structure, it is to avoid gold-aluminium alloy embrittlement failure under the high temperature conditions.
Further, when palladium layers are thicker, then palladium layers arrangement is fine and close, and the reaction of gold and palladium displacement only occurs；If palladium layers compared with
Thin, then golden liquid can be contacted through palladium layers interstitial void with nickel dam, and gold is also replaced with palladium displacement with nickel, can cause palladium layers and nickel dam
The risk of stripping, therefore, palladium layers are 0.2 μm~0.5 μ m-thick in the present invention.
Further, exist, its leaching because layer gold is the purpose of solderability in order to improve coating and routing ability
The very thin thickness of gold.During pb-free solder, very thin layer gold is fused into and is dispersed in the solder of melting rapidly.Due to solder
When the weight ratio of middle gold is more than 3%, solder joint embrittlement can be caused, influence soldering reliability.Therefore, plated thickness will be controlled by
Between 0.05 μm~0.1 μm.
Specific embodiment
The present invention is described in detail below.
The present invention is comprised the following steps：
(1) wafer preparation → (2) oil removing → (3) washing → (4) microetch → (5) washing → (6) zinc activation → (7)
HNO3Treatment → (8) washing → (9) secondary zinc activation → (10) washing → (11) Electroless Plating Ni → (12) chemical plating Pd → (13)
The drying of chemical plating Au → (14) washing → (15).
Idiographic flow is as follows：
1) semiconductor bare chip surface or wafer are carried out into oil removing, oil removing using plasma cleaning or can use cleaning fluid
Washed.Freon is used in the present invention carries out oil removing.
2) microetch：Semiconductor bare chip surface after oil removing or wafer are put into the mixed solution of the concentrated sulfuric acid and hydrogen peroxide
In, washed after reacting 60-90s at 30-40 DEG C；Wherein, the volume of the concentrated sulfuric acid (mass concentration is 18.4mol/L) and hydrogen peroxide
Than being (80-100) mL：(80-90)mL.
3) a zinc activation：Using the activating solution of following proportioning, (activating solution is by NaOH, zinc oxide, trichlorine
Change iron and sodium potassium tartrate tetrahydrate are added to the water prepared；The concentration of NaOH is 500-600g/L in activating solution；Zinc oxide
Concentration is 90-100g/L；Ferric trichloride FeCl3Concentration be 1g/L；The concentration of sodium potassium tartrate tetrahydrate is 10g/L) in reaction temperature
A zinc activation is carried out to react 30-40s at 25 ± 5 DEG C.
4) after a zinc activation, acid corrosion is carried out, zine corrosion is fallen, specifically in salpeter solution is immersed in, soak 15-
Washed after 30s.Wherein, aqueous solution of nitric acid is by volume 1:1 nitric acid is added to the water it is prepared.
5) secondary zinc activation：Using the activating solution of following proportioning, (activating solution is by NaOH, zinc oxide, trichlorine
Change iron and sodium potassium tartrate tetrahydrate and be added to the water prepared, the concentration of NaOH is in activating solution：500-600g/L；Zinc oxide
Concentration is：90-100g/L；Ferric trichloride FeCl3Concentration be 1g/L；The concentration of sodium potassium tartrate tetrahydrate is：10g/L) it is in temperature
15-20s is reacted at 25 ± 5 DEG C, secondary zinc activation is carried out, then washed.
By zinc activation process twice, one layer of uniform, fine and close zinc is formed while removing aluminium and alloy surface oxide-film
Layer is stopping that aluminium surface is oxidized again.
6) Electroless Plating Ni：Using the plating solution of following proportioning, (plating solution is by NiSO4With H3BO3It is added to the water prepared, and
NiSO in plating solution4Concentration be：300g/L；H3BO3Concentration be：40g/L), with the deposition velocity of 0.2 μm -0.3 μm/min,
Ni layers of 2 μm~4 μm is formed by bare chip or crystal column surface after secondary zinc activation.
7) chemical plating Pd：Using the plating solution of following proportioning, (plating solution is by NiSO4With H3BO3It is added to the water prepared, and
Dichloro diaminourea palladium salt Pd (NH in plating solution3)2Cl2Concentration be 20~40g/L；Ammonium chloride NH4The concentration of Cl is 10~20g/L；
The mass concentration of ammoniacal liquor is 25%；NH4The concentration of OH is 40~60g/L), under the sedimentation rate of 0.05 μm -0.1 μm/min,
Pd layers is deposited on bare chip surface, thickness is 0.2 μm~0.5 μm.
8) gold is soaked：Using following proportioning plating solution (plating solution be by gold sodium sulfide, sodium sulfite, sodium thiosulfate and
Borax is added to the water prepared, plating solution sulfite gold sodium NaAu (SO3)2Concentration be 2g/L；Sodium sulfite Na2SO3Concentration
It is 15/L；Sodium thiosulfate Na2S2O3Concentration be 12.5g/L；Borax Na2B4O7.10H2The concentration of O is 10g/L), in 0.01 μ
Under the sedimentation rate of m/min, Au layers is deposited on bare chip surface, thickness is 0.05 μm~0.1 μm；Then wash, dry.
In the present invention, quantitative determination is carried out to each layer metallization thickness using step-on testing instrument.
When being made in practice, comprise the following steps：
1) wafer frontside is anti-pollution, back-protective technology
In the bond pad surface chemical treatment to crystal column surface, plating solution is optimized first before increasing multiple layer metal film, it is ensured that
Corrosion-free to wafer frontside passivation layer, pollution side effect；Its is secondary in wafer rear painting Protection glue, solidification, and protection wafer exists
It is injury-free in plating process.The graphical quality of gluing is most important to follow-up whole production technology, therefore plan uses wafer
Glue spreader carries out gluing to wafer rear, it is ensured that wafer or bare chip surface cleaning are without pickup.
2) crystal column surface activating technology
Crystal column surface activating technology is method of the crystal column surface by soaking zinc, to Al pad tables before selective chemical plating
Face carries out activation process, increases the surface-active of pad.Because wafer is exposed when in atmosphere, the easy shape of Al bond pad surfaces
Into oxide-film, so as to reduce bond pad surface activity, combining closely for coating and Al bond pad surfaces is hindered.Therefore, this is selected
Rational preprocess method in invention, improves bond pad surface activity, and the adhesion for increasing coating with pad is selective chemical plating
The successful key precondition technology of effect.
3) selective chemical coating technology
By the method for selective chemical plating, it is that raising Al pad bondings can to increase plural layers metal in Al bond pad surfaces
By the critical process of property, the difficult point of this technical scheme mainly includes how to control the thickness of different film metals and the stabilization of technique
Property.Chemical plating solution is by main salt, reducing agent, complexing agent, buffer, stabilizer and accelerator, surfactant and brightener
Deng composition, its base stock is main salt and reducing agent.The effect of each component is different, but does not limit strictly, therefore influenceization
The parameter for learning plating effect is a lot.By orthogonal test method, main salt, reducing agent, complexing agent concentration and plating solution in contrast plating solution
The factors such as pH value to coated metal content and plate fast influence in aluminium base plating process, can using the plating solution in the present invention
To realize that aluminium base surface chemistry thickness of coating and the control of plating speed provide safeguard.
4) clean, dry, take off membrane technology
Crystal column surface selective chemical plating needs to clean wafer, dries after completing, and is then gone by film stripping machine
Except the protection glued membrane of wafer rear.For the integrated circuit bare chip of sliver, chip is pasted onto blue film surface, and using double
Blue film is fixed on crystal column surface by face adhesive tape.
Technological principle of the invention is as follows：
Made at semiconductor bare chip surface (whole wafer or sliver) using chemical nickel plating gold-leaching technology (ENEPIG)
The Ni-Pd-Au three-layer metals of standby suitable gold thread Heat Ultrasonic Bonding, the gold-aluminium of original bare chip surface generally existing is different
Matter bonding structure is modified as Jin-gold homogeneity bonding structure, it is to avoid the embrittlement failure under the high temperature conditions of gold-aluminium alloy.
Chemical nickel plating, palladium, metallographic, compared with immersion Ni/Au, are only that a palladium cylinder, but root are added between nickel cylinder and golden cylinder
Chemical NiPdAu technology can be divided into two types, i.e. reduced form NiPdAu (ENEPIG) technique according to the difference reacted in palladium cylinder
And displaced type NiPdAu technique.There is redox reaction when palladium layers are generated in the former, the latter then occurs displacement reaction.
Wherein, when palladium layers are thicker, then palladium layers arrangement is fine and close, and the reaction of gold and palladium displacement only occurs；If palladium layers are relatively thin,
Golden liquid can be contacted through palladium layers interstitial void with nickel dam, and gold is also replaced with palladium displacement with nickel, and palladium layers can be caused to be peeled off with nickel dam
Risk, therefore, palladium layers must have certain thickness, and palladium layers are 0.2 μm~0.5 μ m-thick in the present invention.In addition, the reaction of ENIPIG
It is also classified into 3 steps：Chemical nickel plating, chemical palladium immersing and chemistry leaching gold, wherein chemical nickel plating with chemistry leaching gold reaction mechanism with
ENEPIG's is basically identical, unique the difference is that the reaction of generation palladium, chemical palladium-plating reacts to replace in ENIPIG.
Exist because layer gold is the purpose of solderability in order to improve coating and routing ability, the thickness of its leaching gold is very
It is thin.During pb-free solder, very thin layer gold is fused into and is dispersed in the solder of melting rapidly.Due to the weight of gold in solder
During than more than 3%, solder joint embrittlement can be caused, influence soldering reliability.Therefore, plated thickness to be controlled by 0.05 μm~
Between 0.1 μm.Golden face as ENEPIG coating most top layer film, its surface topography and consistency determine quality and the weldering of coating
The reliability for connecing.Found by research, the layer gold of ENEPIG has surface texture smooth, in uniform thickness, and unit cell arrangement
Densification, without microcrack is found, golden face lattice structure is good.
The effect of very thin chemical palladium layers is added between electroless nickel layer and leaching layer gold mainly two aspects：(1) stop
The diffusion and migration of nickel, prevent the generation of black disk.In welding, after very thin layer gold fuses into solder rapidly, due to the fusing point of palladium
Height, welding when palladium fusing speed than gold it is slow a lot, the palladium of melting can form one layer of barrier layer in nickel surface can prevent copper
The generation of nickel metal oxide, so as to improve welding performance.(2) because the palladium layers of hardness is bigger are present, layer gold can be made thick
Degree is significantly reduced, and can so improve the reliability of pad, and preferable anti-wear performance can be obtained again and gold thread performance is beaten, and is fitted
Conjunction is applied on the product of high connecting reliability.By sem analysis, palladium face structure cell is fine and close, smooth, corrosion-free generation.Peel off gold
Palladium face cell configuration is fine and close after layer, and without microcrack is found, lattice structure is good.
Nickel dam mainly plays welding.In welding process, very thin gold and palladium will be fused into solder in succession, and exposed
Just intermetallic compounds, the welding for having been formed and reliability are formed with fresh nickel dam with the tin in solder.Layer gold, palladium layers are shelled
From rear, by means of characterization technique, it can be observed that nickel face light is smooth, crystal boundary is clear, homogeneous grain size, corrosion-free generation.
But there is space between nickel dam crystal boundary, compactness is poor compared with palladium layers, therefore the fine and close palladium layers of last layer are plated on nickel dam, can be effective
Attack of the stop golden chemical medicinal liquid of leaching to nickel face, it is to avoid the generation of nickel dam black pad defect.
Embodiment
Fundamentally to solve the problems, such as the bonding reliability under the hot environment of semiconductor devices, it is necessary to from bond wire
Material is set about itself, and the present invention provides a kind of chemical nickel plating palladium technology for gold extraction that is based on and carries out bonding gold on semiconductor bare chip surface
The modified method of categoryization, treatment is modified by original alumina-base material, the heterogeneous bonding structure of gold-aluminium is converted into Jin-gold same
Matter bonding structure, so as to the high temperature service life and long-term reliability of semiconductor devices is substantially improved.Soaked by using chemical nickel plating palladium
Gold process, preparing three layers in semiconductor crystal wafer or semiconductor bare chip surface metalation can be with compatible heat ultrasound gold thread bonding
NiPdAu three-layer metalization layer.
Bond wireization before modified after Example Test Data：
The bonding sample before and after metalized modified is prepared respectively using CD4520 bare chips, and then two groups of samples are carried out
Two groups of samples are carried out the following Tables 1 and 2 of bond strength test result by 300 DEG C, the high temperature storage of 24h respectively：(unit:Gram,
Underscore data are de- key failure mode)
Sample bond strength test data before the metalized modified of table 1
| 5.8 | 7.6 | 6.0 | 7.8 | ||||||
| 6.6 | 8.4 | 6.4 | |||||||
| 7.9 | 6.5 | 7.9 | |||||||
| 7.1 | 7.5 | ||||||||
| 7.0 | 6.3 | 6.2 | 7.3 | ||||||
| 7.7 | 6.1 | 6.7 | 7.4 | ||||||
| 8.3 | 8.0 | 7.7 | 8.0 | ||||||
| 6.6 | 7.7 | ||||||||
| 6.5 | 7.3 | ||||||||
| 7.9 | 8.4 | 7.6 | 7.7 |
Sample bond strength test data after the metalized modified of table 2
| 7.5 | 8.4 | 8.3 | 6.5 | 8.1 | 7.6 | 6.1 | 9.8 | 8.9 | 10.1 |
| 7.4 | 8.5 | 7.4 | 7.3 | 7.1 | 8.0 | 7.0 | 9.6 | 9.1 | 8.8 |
| 9.1 | 7.9 | 6.3 | 8.1 | 8.3 | 10.0 | 8.7 | 7.7 | 6.3 | 7.5 |
| 7.3 | 7.9 | 8.1 | 9.7 | 8.5 | 8.0 | 7.0 | 8.0 | 7.7 | 9.6 |
| 7.9 | 7.8 | 5.7 | 7.4 | 8.3 | 8.6 | 8.8 | 9.2 | 8.2 | 7.9 |
| 6.6 | 7.1 | 7.6 | 7.9 | 6.1 | 8.1 | 6.8 | 8.8 | 10.0 | 8.6 |
| 8.0 | 9.1 | 7.2 | 8.5 | 7.5 | 7.4 | 8.2 | 9.4 | 8.6 | 8.8 |
| 7.3 | 7.5 | 9.7 | 9.3 | 9.3 | 8.3 | 8.4 | 8.2 | 7.6 | 7.5 |
| 9.0 | 9.8 | 7.8 | 7.5 | 8.0 | 10.2 | 8.0 | 8.4 | 6.9 | 10.1 |
| 8.8 | 7.9 | 5.7 | 7.9 | 8.3 | 8.1 | 7.5 | 8.5 | 8.6 | 7.6 |
As can be seen from Table 1 and Table 2,100 leads have 69 (to be degenerated very fast for de- key failure mode in sample before modified
Failure mode), wherein minimum bond strength is 1.9 grams, and 100 leads are fracture failure pattern in modified sample
(slower failure mode of degenerating), wherein minimum bond strength is 5.6 grams, modified sample tests are substantially better than before modified
Sample tests.Moving back for the heterogeneous bonding of chip surface is significantly reduced by the metalized modified that bare chip surface is carried out
Change speed, improve long-term reliability of the heterogeneous bonding structure of chip surface in hot environment.
Claims (10)
1. it is a kind of that the method that bond wireization is modified is realized on semiconductor bare chip, it is characterised in that to comprise the following steps：
1) microetch：Semiconductor bare chip surface after oil removing or wafer are put into mixed solution of the sulfuric acid with hydrogen peroxide,
Washed after 60-90s is reacted at 30-40 DEG C；
2) a zinc activation：By through step 1) the semiconductor bare chip surface of microetch or wafer use activating solution, in reaction temperature
To activate 30-40s at 20-30 DEG C；
3) acid corrosion：After zinc activation, acid corrosion is carried out, zine corrosion is fallen；
4) secondary zinc activation：By through step 3) element after acid corrosion uses activating solution to be activated in the case where temperature is for 20-30 DEG C
15-20s, then washes；
5) Electroless Plating Ni：Using plating solution, bare chip or crystal column surface after being activated by secondary zinc carry out deposition formed 2 μm~
Ni layers of 4 μm；
6) chemical plating Pd：Using plating solution, Pd layers is deposited on Ni layers, thickness is 0.2 μm~0.5 μm；
7) gold is soaked：Using plating solution, Au layers is deposited on Pd layers, thickness is：0.05 μm~0.1 μm, then wash, dry.
2. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 1) in sulfuric acid mass concentration for 18.4mol/L, sulfuric acid is (80-100) mL with the volume ratio of hydrogen peroxide：(80-
90)mL。
3. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 3) in acid corrosion be specifically in aqueous solution of nitric acid is immersed in, immersion 15-30s after wash；Wherein, nitric acid is water-soluble
Liquid is by volume 1:1 nitric acid is added to the water it is prepared.
4. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 2) and step 4) in activating solution be by NaOH, zinc oxide, ferric trichloride and sodium potassium tartrate tetrahydrate add
It is obtained in water, and the concentration of NaOH is 500-600g/L in activating solution, and oxidation zinc concentration is 90-100g/L, three
The concentration of iron chloride is 1g/L, and the concentration of sodium potassium tartrate tetrahydrate is 10g/L.
5. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 5) in plating solution be by NiSO4With H3BO3It is added to the water prepared, and NiSO in plating solution4Concentration be 300g/L,
H3BO3Concentration be 40g/L.
6. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 5) in deposited with the speed of 0.2 μm -0.3 μm/min.
7. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 6) in plating solution be by dichloro diaminourea palladium salt, ammonium chloride, ammoniacal liquor and NH4OH is added to the water prepared, and plates
The concentration of dichloro diaminourea palladium salt is 20~40g/L in liquid, and the concentration of ammonium chloride is 10~20g/L, and the mass concentration of ammoniacal liquor is
25%, NH4The concentration of OH is 40~60g/L.
8. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 6) in deposited under the speed of 0.05 μm -0.1 μm/min.
9. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 7) in plating solution be gold sodium sulfide, sodium sulfite, sodium thiosulfate and borax are added to the water it is prepared, and
And in plating solution, the concentration of gold sodium sulfide is 2g/L, and the concentration of sodium sulfite is 15/L, and the concentration of sodium thiosulfate is 12.5g/
L, the concentration of borax is 10g/L.
10. a kind of method for realizing that bond wireization is modified on semiconductor bare chip according to claim 1, its feature
Be, step 7) in deposited under the speed of 0.01 μm/min.
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| CN108493117A (en) * | 2018-03-13 | 2018-09-04 | 电子科技大学 | A kind of surface modification method inhibiting the diffusion of package substrate bond pad surface conductive silver glue |
| CN109994390A (en) * | 2019-04-09 | 2019-07-09 | 深圳市圆方科技新材料有限公司 | A kind of pre-packaged method of chip |
| CN111540681A (en) * | 2020-05-29 | 2020-08-14 | 上海华虹宏力半导体制造有限公司 | Metallization method applied to IGBT chip |
| CN113005439A (en) * | 2021-02-24 | 2021-06-22 | 深圳市创智成功科技有限公司 | Chemical palladium plating process for electronic packaging carrier plate |
| CN114164465A (en) * | 2021-11-15 | 2022-03-11 | 深圳市联合蓝海黄金材料科技股份有限公司 | Sodium gold sulfite gold water and synthesis method and application thereof |
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| CN114843170A (en) * | 2022-03-31 | 2022-08-02 | 华虹半导体(无锡)有限公司 | Film sticking method applied in chemical immersion plating process |
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Application publication date: 20170613 |