CN107063473B - A kind of ion implanting prepares curved surface focus planar detector of electrode and preparation method thereof - Google Patents
A kind of ion implanting prepares curved surface focus planar detector of electrode and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000010408 film Substances 0.000 claims abstract description 65
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 150000002500 ions Chemical class 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 42
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000004020 conductor Substances 0.000 claims abstract description 18
- 239000010936 titanium Substances 0.000 claims abstract description 18
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 18
- TUDPMSCYVZIWFW-UHFFFAOYSA-N [Ti].[In] Chemical compound [Ti].[In] TUDPMSCYVZIWFW-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 106
- 229910052751 metal Inorganic materials 0.000 claims description 40
- 239000002184 metal Substances 0.000 claims description 40
- 239000011241 protective layer Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 29
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 17
- 238000012545 processing Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 15
- 238000000151 deposition Methods 0.000 claims description 9
- 238000001259 photo etching Methods 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 230000009467 reduction Effects 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- -1 Nitrogen ion Chemical class 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000002513 implantation Methods 0.000 claims description 3
- 229910052743 krypton Inorganic materials 0.000 claims description 3
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 238000002310 reflectometry Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910004205 SiNX Inorganic materials 0.000 claims description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims 1
- 238000003384 imaging method Methods 0.000 abstract description 19
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- 238000004519 manufacturing process Methods 0.000 description 8
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- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000571 coke Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002360 explosive Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 244000309464 bull Species 0.000 description 1
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- 230000007812 deficiency Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical group [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
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- 230000003595 spectral effect Effects 0.000 description 1
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- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The present invention relates to the curved surface focus planar detectors that a kind of ion implanting prepares electrode, the detector is curved surface, its radius of curvature is not less than 3mm, its thickness is no more than 50 μm, and its electrode layer and heat-sensitive layer are thin film of titanium oxide, flatness is higher, and can be applicable in big visual field or ultra-large vision field, super large face array high-resolution imaging；Further relate to the preparation method of above-mentioned detector, thin film of titanium oxide is prepared on supporting layer, and with the thin film of titanium oxide in photoresist covering bridge floor region, ion implanting is carried out to the thin film of titanium oxide at bridge leg, the thin film of titanium oxide in bridge floor region is semiconductor oxide titanium film, is equivalent to heat-sensitive layer；The thin film of titanium oxide in bridge leg region is conductor indium titanium film；It further include being thinned to detector within 50 μm, and the step of bend fixing is carried out to it；It can remain that light focus on focus planar detector, to guarantee maximum imaging effect, is suitably applied big visual field or ultra-large vision field, super large face array high-resolution imaging.
Description
Technical field
The invention belongs to the MEMS technique manufacturing fields in semiconductor technology, and in particular to a kind of ion implanting system
The curved surface focus planar detector and preparation method thereof of standby electrode.
Background technique
Research with people to each wave band electromagnetic wave, since 21 century, THz imaging technology enters people gradually
Sight.The frequency of Terahertz is very high, wavelength is very short, has very high time-domain spectral signal-to-noise ratio, and in dense smoke, Sand Dust Environment
Middle transmission loss is seldom, can penetrate wall and be scanned to house inside.With cost is higher, operating distance is shorter, Wu Fashi
The X-ray scanners of not specific explosive are compared, terahertz imaging have unique advantage, at present Preliminary Applications in check postal
Part, the identification security fields such as explosive and nondestructive inspection.
High-resolution image becomes inevitable demand, and existing scheme is plane focal plane array image-forming, big entering
When scale high definition (2K, 4K) is imaged, researcher adjusts optical path by the system of the complexity such as lens and other optical modules, makes
Light focusing is obtained at detector focal plane (FPA), to obtain better imaging effect, application is more complicated.
When using plane focus planar detector, when the infrared or terahertz imaging of traditional small field of view low resolution, lens
Imaging is focused near primary optical axis, and depth of focus is enough to cover detector focal plane range, formed clearly as；But
It is that when carrying out large visual field high resolution imaging, field of view edge will be imaged, the light of that following oblique incidence is also got over
Come more, the focus point of these light can deviate focal plane, and more toward field of view edge, oblique incidence angle is bigger, the coke of imaging
Point can be remoter from primary optical axis, and gradually more and more remoter from plane focal plane.When focal length plane is more than depth of focus, will occur
More toward image border more the phenomenon that be distorted.
Typically now use vanadium oxide as thermosensitive film, but vanadium oxide thermosensitive film and integrated circuit fabrication process
Compatibility is bad, and factory worries that vanadium oxide material and vanadium material stain equipment, needs to carry out single equipment after vanadium oxide technique
It solely configures and is isolated, prevent from staining other products and process equipment.
In addition, being generally electrically connected in the prior art by deposit metal electrodes with heat-sensitive layer film, heat-sensitive layer is experienced
Temperature change be transmitted on the reading circuit of pedestal, it is also necessary to metal electrode layer is handled by photoetching or etching portions of patterned,
Technique is cumbersome, and production capacity is lower, and waste of resource, and either first deposits thermosensitive film, redeposited electrode, and still first deposition is electric
Pole deposits thermosensitive film afterwards, neither in one plane, as soon as more planes, influence flatness bull point, technique step
It is rapid more, it is possible to bring more defects, influence yield.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provides a kind of ion implanting and prepares the curved surface focal plane of electrode and visits
Device is surveyed, uses titanium oxide as temperature-sensitive layer film, and ion implanting is carried out to partial oxidation titanium film, keeps the partial oxidation titanium thin
Film becomes conductor indium titanium film, and instead of metal electrode in the prior art, simple process, production capacity is higher；And detector is song
Face can be suitable for big visual field, ultra-large vision field or super large face array high-resolution imaging.
A kind of ion implanting of solution above-mentioned technical problem prepares the skill of the curved surface focus planar detector of electrode in the present invention
Art scheme is as follows: a kind of ion implanting prepares the curved surface focus planar detector of electrode, the semiconductor for having reading circuit including one
Pedestal and the detector body being electrically connected with the semiconductor pedestal, which is characterized in that the detector is curved surface, curvature half
Diameter is not less than 3mm, and for thickness no more than 50 μm, the overall thickness of the reading circuit and the detector body is no more than 10 μm；
The detector body includes metallic reflector, insulating medium layer, supporting layer and thin film of titanium oxide, the semiconductor
Pedestal is equipped with metallic reflector and insulating medium layer, and the metallic reflector includes several metal blocks；
The insulating medium layer is equipped with supporting layer, and the supporting layer is equipped with anchor point hole and through-hole, and the through-hole terminates
It is filled in the metal block, in the anchor point hole and the through-hole and connects metal, on the supporting layer and the connection metal
Equipped with thin film of titanium oxide, the thin film of titanium oxide includes in the semiconductor oxide titanium film in bridge floor region and leading in bridge leg region
Body thin film of titanium oxide, the semiconductor oxide titanium film are equipped with the first protective layer, the conductor indium titanium film and described the
One protective layer is equipped with the second protective layer.
A kind of beneficial effect for the curved surface focus planar detector that ion implanting prepares electrode is in the present invention:
(1) it uses thin film of titanium oxide as temperature-sensitive layer film, there is preferable stability, resistance reply speed is fast, resistance
Memory effect is few；
(2) area of thermosensitive film is increased, to increase filling rate, metal electrode layer and heat-sensitive layer are titanium oxide
Film, can thus save processing step, and the flatness of detector is higher；
(3) light focus can be remained on curved surface focus planar detector, to guarantee imaging effect to the greatest extent
Fruit；It is suitably applied big visual field or ultra-large vision field, super large face array high-resolution imaging.
Further, the connection metal is tungsten, aluminium or copper.
Further, metallic reflector with a thickness ofMetallic reflector is 8~14 μm infrared to wavelength
The reflectivity of light is 99% or more.
Further, the insulating medium layer be silicon nitride film or silicon oxide film, with a thickness of
Further, the supporting layer is silicon nitride film, with a thickness of
The invention further relates to the preparation method that a kind of ion implanting prepares the curved surface focus planar detector of electrode, including it is following
Step:
Step 1: making metallic reflector on comprising reading circuit semiconductor pedestal, and figure is carried out to metallic reflector
Change processing, it is graphical after metallic reflector form several metal blocks；Reading electricity on the metal block and semiconductor pedestal
Road electrical connection；Then, insulating medium layer is deposited on completing patterned metal reflecting layer；
Step 2: the deposited sacrificial layer on the insulating medium layer, and processing is patterned to sacrificial layer, in figure
Change and form anchor point hole on treated sacrificial layer, and depositing support layer on the sacrificial layer after graphical treatment；
Step 3: using the method for photoetching and etching, etching away part supporting layer, supporting layer etch-stop is in the metal
Block forms through-hole, in the through-hole and anchor point inner hole deposition product connection metal；
Step 4: the deposited oxide titanium film on supporting layer, and the first protective layer is deposited on thin film of titanium oxide, then,
Photoresist is coated on the bridge floor of first protective layer, the photoresist overlay area is semiconductor oxide titanium film, and as detector
Temperature-sensitive layer film；
Step 5: with the first protection not covered by photoresist above engraving method (dry or wet) removal thin film of titanium oxide
Layer film, the first etching protection layer terminate at the thin film of titanium oxide, and exposed portion thin film of titanium oxide is thin to the titanium oxide of exposing
Film carries out ion implanting, and ion is argon, krypton or Nitrogen ion, and Implantation Energy controls the ion concentration control between 1Kev~100Kev
System is 1 × 1013ions/cm2~1 × 1021ions/cm2Between, the thin film of titanium oxide after ion implanting is that conductor indium titanium is thin
Film；
Step 6: removal photoresist deposits the second protection in conductor indium titanium film and the first protective layer not being etched
Layer；
Step 7: using the method for photoetching and etching, processing, the second etching protection layer being patterned to the second protective layer
Terminate at sacrificial layer.
Step 8: reduction processing, using stripping apparatus, in the positive mask of detector, the back side carries out reduction processing, detection
The thickness of device is thinned within 50 μm, overleaf pad pasting after being thinned；
Step 9: carrying out structure release, remove sacrificial layer and form micro-bridge structure；Then, to detector bend fixing: by band
The annulus or cylinder for having the focus planar detector uniform force of back side pad pasting are fixed, and overleaf vacuumize or front is increased
Pressure, makes detector focal plane be deformed into curved surface with film, according to the pressure applied Control curve radius of curvature, makes its radius of curvature not
Less than 3mm, then, using method physically or chemically, curved surface is made to be kept fixed curvature, it is made no longer to reply flat state.
The beneficial effect that intermediate ion injection of the present invention prepares the preparation method of the curved surface focus planar detector of electrode is:
(1) it uses thin film of titanium oxide as temperature-sensitive layer film, there is preferable stability, resistance reply speed is fast, resistance
Memory effect is few；
(2) manufacturing process of thin film of titanium oxide is compatible with CMOS processing procedure, without arranging special machine because of pollution problem
Production capacity and efficiency is substantially improved in platform；
(3) area of thermosensitive film is increased, to increase filling rate, and the thin film of titanium oxide ion note in bridge leg region
Become conductor indium titanium film after entering, electric conductivity is more preferable, and conductor indium titanium film region is equivalent to metal in the prior art
Electrode layer, the thin film of titanium oxide on bridge floor are not ion implanted, are equivalent to temperature-sensitive layer film in the prior art, eliminate electrode
The independent deposition film of layer, photoetching and etching and etc., processing step is significantly simplified, cost is saved, improves production capacity；
(4) deposit metal electrodes layer, the deposition of a few plane, it will be able to further increase the flat of detector are not had to
Degree, effectively promotion manufacturing yield；
(5) thickness of detector is thinned within 50 μm, then carries out bend fixing processing, shape to plane focus planar detector
Light focus can be remained on the detector at curved surface focus planar detector, thus guarantee maximum imaging effect,
It is suitably applied big visual field or ultra-large vision field, super large face array high-resolution imaging.
Further, bend fixing first is carried out to the focus planar detector in step 9: the detector of back side pad pasting will be had
It is fixed with the annulus of uniform force or cylinder, squeezes detector surface, mandril round end radius with a flexible round end mandril in front
Can be from 3mm to ∞, then so that detector is formed curved surface makes curved surface be kept fixed curvature, makes using method mechanically or chemically
It no longer replys flat state；Then, structure release is carried out, removes sacrificial layer and forms micro-bridge structure.
Beneficial effect using above-mentioned further technical solution is: first structure release is not carried out to detector, it at this time can be with
It goes to squeeze detector using flexible round end mandril, after device bend fixing to be detected, then carries out structure release, detector bend fixing
Technique is simpler.
Further, so that the detector is kept fixed curvature using the method for baking, it is made no longer to reply flat state.
Further, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx
's.
Further, the sacrificial layer is polyimides or amorphous carbon, with a thickness of 1.0~2.5 μm.
Detailed description of the invention
Fig. 1 is that metallic reflector and insulating medium layer form schematic diagram in the present invention；
Fig. 2 is that sacrificial layer and supporting layer form schematic diagram in the present invention；
Fig. 3 is that through-hole forms schematic diagram in the present invention；
Fig. 4 is that filling hole with metal schematic diagram is connected in the present invention；
Fig. 5 is that thin film of titanium oxide forms schematic diagram in the present invention；
Fig. 6 is that the first protective layer forms schematic diagram in the present invention；
Fig. 7 is that photoresist forms schematic diagram in the present invention；
Fig. 8 is that intermediate ion of the present invention injects thin film of titanium oxide schematic diagram；
Fig. 9 is that the second protective layer forms schematic diagram in the present invention；
Figure 10 is the second protective layer graphical schematic diagram in the present invention；
Figure 11 is the planar detector structural schematic diagram that intermediate ion injection of the present invention prepares electrode；
Figure 12 is the curved surface focus planar detector structural schematic diagram that intermediate ion injection of the present invention prepares electrode；
Figure 13 is the plane focus planar detector and curved surface focus planar detector list that intermediate ion injection of the present invention prepares electrode
A lens light path schematic diagram；
Figure 14 is detector bend fixing status diagram in the embodiment of the present invention one；
Figure 15 is detector bend fixing status diagram in the embodiment of the present invention two；
In the accompanying drawings, list of designations represented by each label is as follows: 1, semiconductor pedestal, 2, metallic reflector, 2-
1, metal block, 3, insulating medium layer, 4, sacrificial layer, 5, supporting layer, 6, anchor point hole, 7, through-hole, 8, connection metal, 9, titanium oxide it is thin
Film, 9-1, semiconductor oxide titanium film, 9-2, conductor indium titanium film, the 10, first protective layer, 11, photoresist, the 12, second protection
Layer, 13, lens, 14, curved surface focal plane, 15, plane focal plane, 16, parallel incoming rays, 17, oblique incidence light, 18, annulus
Or cylinder, 19, round end mandril.
Specific embodiment
The principle and feature of the curved surface focus planar detector of electrode are prepared to intermediate ion injection of the present invention below in conjunction with attached drawing
It is described, the given examples are served only to explain the present invention, is not intended to limit the scope of the present invention.
As shown in Figure 11-Figure 12, a kind of ion implanting prepares the curved surface focus planar detector of electrode, including one has reading
The semiconductor pedestal 1 of circuit and the detector body being electrically connected with the semiconductor pedestal, which is characterized in that the detector is
Curved surface, radius of curvature are not less than 3mm, and thickness is no more than 50 μm, the total thickness of the reading circuit and the detector body
Degree is no more than 10 μm；
The detector body includes metallic reflector 2, insulating medium layer 3, supporting layer 5 and thin film of titanium oxide 9, and described half
Conductor pedestal 1 is equipped with metallic reflector 2 and insulating medium layer 3, and the metallic reflector 2 includes several metal blocks 2-1；
The insulating medium layer 3 is equipped with supporting layer 5, and the supporting layer 5 is equipped with anchor point hole 6 and through-hole 7, the through-hole
7 terminate at the metal block 2-1, and connection metal 8, the supporting layer 5 and institute are filled in the anchor point hole 6 and the through-hole 7
It states connection metal 8 and is equipped with thin film of titanium oxide 9, the thin film of titanium oxide 9 includes the semiconductor oxide titanium film in bridge floor region
9-1 and conductor indium titanium film 9-2 in bridge leg region, the semiconductor oxide titanium film 9-1 are equipped with the first protective layer 10,
The conductor indium titanium film 9-2 and first protective layer 10 are equipped with the second protective layer 12.
Illustrate that curved surface focus planar detector is visited with respect to plane focal plane below by the simple light path system of single lens
The advantage of device is surveyed, as shown in figure 13.
In parallel input light, 16 light of parallel incoming rays can pass through the focus on lens primary optical axis, usually handle
By the focus, and perpendicular to the plane of primary optical axis as focal plane 15, plane focus planar detector can be burnt with plane in figure
Plane 15 is overlapped.
When the infrared or terahertz imaging of now traditional small field of view low resolution, lens focus imaging is in key light
Near axis, and depth of focus is enough to cover detector focal plane range, formed clearly as.
But when carrying out large visual field high resolution imaging, field of view edge will be imaged, that following oblique incidence
Light 17 is also more and more, and the focus point of these light can deviate plane focal plane 15, and more toward field of view edge, oblique firing angle
Degree is bigger, and the Focus Club of imaging is remoter from primary optical axis, and gradually increasingly remoter from plane focal plane 15, when focal length plane is burnt
It, will there is a phenomenon where more toward image border more be distorted when plane 15 is more than depth of focus.If using curved surface focus planar detector, that
The focus point of oblique incidence light 17 can be on curved surface focal plane 14, and either among image or edge all will not
There is distortion phenomenon.
The invention further relates to the preparation methods that above-mentioned ion implanting prepares the curved surface focus planar detector of electrode.
Embodiment one
Ion implanting prepares the preparation method of the curved surface focus planar detector of electrode, comprising the following steps:
Step 1: being carried out comprising making metallic reflector 2 on reading circuit semiconductor pedestal 1, and to metallic reflector 2
Graphical treatment, it is graphical after metallic reflector 2 form several metal blocks 2-1；The metal block 2-1 and semiconductor pedestal
Reading circuit electrical connection on 1；Then, insulating medium layer 3 is deposited on completing patterned metal reflecting layer 2, as shown in Figure 1；
Metallic reflector 2 with a thickness of Metallic reflector 2 exists to the reflectivity for the infrared light that wavelength is 8~14 μm
99% or more, the insulating medium layer 3 be silicon nitride film or silicon oxide film, with a thickness of
Step 2: the deposited sacrificial layer 4 on the insulating medium layer 3, and processing is patterned to sacrificial layer 4, scheming
Anchor point hole 6, depositing support layer 5 on the sacrificial layer 4 after graphical treatment, such as Fig. 2 institute are formed on shapeization treated sacrificial layer 4
Show；The supporting layer 5 be silicon nitride film, the sacrificial layer 4 be polyimides, the sacrificial layer 4 with a thickness of 1.0~2.5 μ
M, the supporting layer 5 with a thickness of
Step 3: using the method for photoetching and etching, etching away part supporting layer 5,5 etch-stop of supporting layer is in the gold
Belong to block 2-1, forms through-hole 7, as shown in Figure 3；The deposition connection metal 8 in the through-hole 7 and anchor point hole 6, as shown in Figure 4；Institute
Stating connection metal 8 is aluminium, tungsten or copper.
Step 4: the deposited oxide titanium film 9 on supporting layer 5, as shown in Figure 5；And first is deposited on thin film of titanium oxide 9
Protective layer 10, as shown in Figure 6；Then, photoresist 11 is coated on bridge floor on the first protective layer 10, as shown in Figure 7；The photoresist covers
Cover area is semiconductor oxide titanium film 9-1, and the temperature-sensitive layer film as detector.
Step 5: the first protection not covered above by photoresist with engraving method (dry or wet) removal thin film of titanium oxide 9
Layer film 10,10 etch-stop of the first protective layer is in the thin film of titanium oxide 9, exposed portion thin film of titanium oxide 9, then again to dew
Thin film of titanium oxide 9 out carries out ion implanting, as shown in Figure 8；Ion is argon, krypton or Nitrogen ion, and Implantation Energy is controlled in 1Kev
Between~100Kev, ion concentration is controlled 1 × 1013ions/cm2~1 × 1021ions/cm2Between, the oxygen after ion implanting
Change titanium film is conductor indium titanium film 9-2, and the conductor indium titanium film 9-2 is equivalent to metal electrode layer in the prior art,
Have good electric conductivity, the temperature change that the temperature-sensitive layer film is experienced is transmitted to reading circuit in time.
Step 6: removal photoresist 11 deposits on conductor indium titanium film 9-2 and the first protective layer 10 not being etched
Second protective layer 12, as shown in Figure 9.
Step 7: using the method for photoetching and etching, processing, the second protective layer 12 being patterned to the second protective layer 12
Etch-stop is in sacrificial layer 4, as shown in Figure 10；
Step 8: reduction processing, using stripping apparatus, in the positive mask of detector, the back side carries out reduction processing, detection
The thickness of device is thinned within 50 μm, overleaf pad pasting after being thinned；
Step 9: carrying out structure release, remove sacrificial layer and form micro-bridge structure, as shown in figure 11；Then, curved to detector
Song sizing: the annulus of the detector uniform force with back side pad pasting or cylinder 18 is fixed, it overleaf vacuumizes or positive
It adds high pressure, so that detector focal plane is deformed into curved surface with film, as shown in figure 14；Control curve curvature half according to the pressure applied
Diameter makes its radius of curvature then using method physically or chemically, curved surface be made to be kept fixed curvature not less than 3mm, makes it not
Flat state is replied again.
Embodiment two
The difference is that, bend fixing first is carried out to detector in step 9, then structure is carried out to it with embodiment one
Release, the specific method is as follows: the annulus of the detector uniform force with back side pad pasting or cylinder 18 is fixed, it is used in front
One flexible round end mandril goes to squeeze detector surface, as shown in figure 15；The round end radius of the round end mandril 19 can from 3mm to
∞ makes detector form curved surface；Then, using the method for baking, curved surface is made to be kept fixed curvature, replys it no longer planar
State removes sacrificial layer and forms micro-bridge structure, it is flat to only give curved surface coke as shown in figure 12, in Figure 12 finally, carrying out structure release
The outer shape of surface detector, internal structure are not drawn into also by bending deformation in Figure 12.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of ion implanting prepares the curved surface focus planar detector of electrode, including a semiconductor pedestal with reading circuit and
The detector body being electrically connected with the semiconductor pedestal, which is characterized in that the detector is curved surface, and radius of curvature is not small
In 3mm, for thickness no more than 50 μm, the overall thickness of the reading circuit and the detector body is no more than 10 μm；
The detector body includes metallic reflector, insulating medium layer, supporting layer and thin film of titanium oxide, the semiconductor pedestal
It is equipped with metallic reflector and insulating medium layer, the metallic reflector includes several metal blocks；
The insulating medium layer is equipped with supporting layer, and the supporting layer is equipped with anchor point hole and through-hole, and the through-hole terminates at institute
Metal block is stated, connection metal is filled in the anchor point hole and the through-hole, the supporting layer and the connection metal are equipped with
Thin film of titanium oxide, the thin film of titanium oxide include the conductor oxygen in the semiconductor oxide titanium film in bridge floor region and in bridge leg region
Change titanium film, the semiconductor oxide titanium film is equipped with the first protective layer, and the conductor indium titanium film and described first protect
Sheath is equipped with the second protective layer.
2. the curved surface focus planar detector that ion implanting according to claim 1 prepares electrode, which is characterized in that the company
Connecing metal is tungsten, aluminium or copper.
3. the curved surface focus planar detector that ion implanting according to claim 1 prepares electrode, which is characterized in that metal is anti-
Penetrate layer with a thickness ofThe reflectivity for the infrared light that metallic reflector is 8~14 μm to wavelength is 99% or more.
4. the curved surface focus planar detector that ion implanting according to claim 1 prepares electrode, which is characterized in that described
Insulating medium layer be silicon nitride film or silicon oxide film, with a thickness of
5. ion implanting according to claim 1-4 prepares the curved surface focus planar detector of electrode, feature exists
In, the supporting layer is silicon nitride film, with a thickness of
6. the described in any item ion implantings of claim 1-5 prepare the preparation method of the curved surface focus planar detector of electrode,
It is characterized in that, comprising the following steps:
Step 1: making metallic reflector on comprising reading circuit semiconductor pedestal, and place is patterned to metallic reflector
Reason, it is graphical after metallic reflector form several metal blocks；Reading circuit electricity on the metal block and semiconductor pedestal
Connection；Then, insulating medium layer is deposited on completing patterned metal reflecting layer；
Step 2: the deposited sacrificial layer on the insulating medium layer, and processing is patterned to sacrificial layer, graphically locating
Anchor point hole, and depositing support layer on the sacrificial layer after graphical treatment are formed on sacrificial layer after reason；
Step 3: using the method for photoetching and etching, etching away part supporting layer, supporting layer etch-stop is in the metal block, shape
At through-hole, in the through-hole and anchor point inner hole deposition product connection metal；
Step 4: the deposited oxide titanium film on supporting layer, and the first protective layer is deposited on thin film of titanium oxide, then, first
Coat photoresist on the bridge floor of protective layer, the photoresist overlay area is semiconductor oxide titanium film, and the heat as detector
Photosensitive layer film；
Step 5: with the first protective layer not covered by photoresist above dry etching or wet etch process removal thin film of titanium oxide
Film, the first etching protection layer terminate at the thin film of titanium oxide, exposed portion thin film of titanium oxide, to the thin film of titanium oxide of exposing
Ion implanting is carried out, ion is argon, krypton or Nitrogen ion, and Implantation Energy controls between 1Kev~100Kev, ion concentration control
1 × 1013ions/cm2~1 × 1021ions/cm2Between, the thin film of titanium oxide after ion implanting is conductor indium titanium film；
Step 6: removal photoresist deposits the second protective layer in conductor indium titanium film and the first protective layer not being etched；
Step 7: using the method for photoetching and etching, processing being patterned to the second protective layer, the second etching protection layer terminates
In sacrificial layer；
Step 8: reduction processing, using stripping apparatus, in the positive mask of detector, the back side carries out reduction processing, detector
Thickness is thinned within 50 μm, overleaf pad pasting after being thinned；
Step 9: carrying out structure release, remove sacrificial layer and form micro-bridge structure；Then, to detector bend fixing: will be with back
The annulus or cylinder of the focus planar detector uniform force of mask are fixed, and overleaf vacuumize or front adds high pressure,
So that detector focal plane is deformed into curved surface with film, according to the pressure applied Control curve radius of curvature, keeps its radius of curvature not small
In 3mm, then, using method physically or chemically, curved surface is made to be kept fixed curvature, it is made no longer to reply flat state.
7. ion implanting according to claim 6 prepares the preparation method of the curved surface focus planar detector of electrode, feature
It is, bend fixing first is carried out to the focus planar detector in step 9: the detector uniform force of back side pad pasting will be had
Annulus or cylinder fix, in one flexible round end mandril extruding detector surface of front, mandril round end radius can from 3mm to
∞, then so that detector is formed curved surface makes curved surface be kept fixed curvature, replys it no longer using method mechanically or chemically
Flat state；Then, structure release is carried out, removes sacrificial layer and forms micro-bridge structure.
8. ion implanting according to claim 6 prepares the preparation method of the curved surface focus planar detector of electrode, feature
It is, so that the detector is kept fixed curvature using the method for baking, it is made no longer to reply flat state.
9. ion implanting according to claim 6 prepares the preparation method of the curved surface focus planar detector of electrode, feature
It is, first protective layer and the second protective layer are formed using chemical vapor deposition low stress SiNx.
10. preparing the preparation side of the curved surface focus planar detector of electrode according to the described in any item ion implantings of claim 6-9
Method, which is characterized in that the sacrificial layer is polyimides or amorphous carbon, with a thickness of 1.0~2.5 μm.
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| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
| CN105408769A (en) * | 2013-07-31 | 2016-03-16 | 谷歌公司 | Photodetector Arrays on Curved Substrates |
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| CN102169919A (en) * | 2011-03-17 | 2011-08-31 | 上海集成电路研发中心有限公司 | Detector and manufacturing method thereof |
| CN105408769A (en) * | 2013-07-31 | 2016-03-16 | 谷歌公司 | Photodetector Arrays on Curved Substrates |
| CN103715307A (en) * | 2013-12-31 | 2014-04-09 | 烟台睿创微纳技术有限公司 | Non-refrigeration infrared detector and preparation method thereof |
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