CN107199488B - A photovoltaic solar silicon wafer thinning processing device - Google Patents
A photovoltaic solar silicon wafer thinning processing device Download PDFInfo
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- CN107199488B CN107199488B CN201710457481.2A CN201710457481A CN107199488B CN 107199488 B CN107199488 B CN 107199488B CN 201710457481 A CN201710457481 A CN 201710457481A CN 107199488 B CN107199488 B CN 107199488B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
- B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
- B24B55/06—Dust extraction equipment on grinding or polishing machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/10—Single-purpose machines or devices
- B24B7/16—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings
- B24B7/17—Single-purpose machines or devices for grinding end-faces, e.g. of gauges, rollers, nuts, piston rings for simultaneously grinding opposite and parallel end faces, e.g. double disc grinders
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
本发明一种光伏太阳能硅片减薄处理装置公开了一种通过两级行星轮盘，对硅片进行双面磨削预减薄的装置。其特征在于密封轴承置于接屑盘底端中部，连接轴一端穿过密封轴承置于接屑盘内，磨削工作台中部通过连接套置于连接轴上，所述磨削工作台上表面开有导液槽，所述导液槽为网纹状结构，所述磨削工作台中心位置导液槽密度大于边缘位置，多个橡胶环分别置于磨削工作台上，且呈环形分布，所述橡胶环的直径从中间向两侧逐渐增加，所述橡胶环的内壁上均匀置有多个凸点，所述磨削工作台上开有多个限距孔，限距标杆置于限距孔内，第一中心齿轮置于连接轴上，且位于磨削工作台的下方，一级行星架总成置于连接轴上。
The invention discloses a photovoltaic solar silicon wafer thinning processing device, which discloses a device for double-sided grinding and pre-thinning of silicon wafers through two-stage planetary discs. It is characterized in that the sealed bearing is placed in the middle of the bottom end of the chip tray, one end of the connecting shaft passes through the sealed bearing and placed in the chip tray, the middle part of the grinding table is placed on the connecting shaft through a connecting sleeve, and the upper surface of the grinding table is There is a liquid guide groove, and the liquid guide groove is a reticulated structure. The density of the liquid guide groove at the center of the grinding table is greater than that at the edge, and a plurality of rubber rings are placed on the grinding table respectively, and are distributed in a ring shape. , the diameter of the rubber ring gradually increases from the middle to both sides, a plurality of bumps are evenly arranged on the inner wall of the rubber ring, a plurality of distance-limiting holes are opened on the grinding table, and the distance-limiting pole is placed In the distance-limiting hole, the first central gear is placed on the connecting shaft, and is located below the grinding table, and the primary planet carrier assembly is placed on the connecting shaft.
Description
技术领域technical field
本发明一种光伏太阳能硅片减薄处理装置，涉及一种对光伏太阳能硅片进行预减薄处理的装置，属于光伏设备领域。特别涉及一种通过两级行星轮盘，对硅片进行双面磨削预减薄的装置。The invention relates to a thinning processing device for photovoltaic solar silicon wafers, which relates to a device for pre-thinning photovoltaic solar silicon wafers and belongs to the field of photovoltaic equipment. It particularly relates to a device for double-sided grinding and pre-thinning of silicon wafers through two-stage planetary wheels.
背景技术Background technique
目前，硅片被广泛应用在光伏领域，而硅片在加工过程中，需要对硅片的厚度进行适当的减薄调整，其主要原因是薄片可以降低器件的导通电阻和压降，从而大幅度减少器件的导通损耗，并提升器件在散热等方面的性能，现有的硅片加工时先对硅片进行切割，然后进行减薄，而硅片减薄方式包括研磨、化学机械抛光、干式抛光等，然而此类的减薄都是对硅片进行小范围内的减薄处理，精度要求较高，而切割后的硅片尺寸差值较大，直接进行上述方式进行减薄，费时费力，且对设备损失加大，且在减薄时，由于减薄磨削行程大，在磨削过程中会出现硅片内部应力释放导致开裂的问题，所以有必要在切割后以及精减薄之间增加预减薄的工作，以解决硅片减薄效率低、破碎率高的问题，同时现有的在磨削过程中，只能单独对硅片一面进行磨削，然后再更换另一面，这种方法不仅费时费力，降低了加工的效率，并且在对硅片进行翻转时需要配合真空吸盘，然而真空吸盘在翻转时会和硅片表面接触，对硅片表面造成损害，不利于硅片的后序加工。At present, silicon wafers are widely used in the field of photovoltaics, and during the processing of silicon wafers, the thickness of silicon wafers needs to be properly thinned and adjusted. The main reason is that thin wafers can reduce the on-resistance and voltage drop of devices, thereby greatly The conduction loss of the device can be greatly reduced, and the performance of the device in terms of heat dissipation can be improved. When the existing silicon wafer is processed, the silicon wafer is first cut and then thinned. The silicon wafer thinning method includes grinding, chemical mechanical polishing, Dry polishing, etc. However, this kind of thinning is to thin the silicon wafer in a small range, which requires high precision, and the size difference of the cut silicon wafer is relatively large. The above method is directly used for thinning. It is time-consuming and labor-intensive, and increases the loss of equipment, and when thinning, due to the large grinding stroke for thinning, the problem of cracking due to internal stress release of the silicon wafer will occur during the grinding process, so it is necessary to Add pre-thinning work between thinning to solve the problem of low thinning efficiency and high breakage rate of silicon wafers. At the same time, in the existing grinding process, only one side of the silicon wafer can be ground separately, and then the other side is replaced. On the one hand, this method is not only time-consuming and laborious, but also reduces the processing efficiency, and needs to cooperate with the vacuum chuck when turning the silicon wafer. Subsequent processing of silicon wafers.
发明内容Contents of the invention
为了改善上述情况，本发明一种光伏太阳能硅片减薄处理装置提供了一种通过两级行星轮盘，对硅片进行双面磨削预减薄的装置。结构简单，方便实用。In order to improve the above situation, a photovoltaic solar silicon wafer thinning processing device of the present invention provides a device for double-sided grinding and pre-thinning of silicon wafers through two-stage planetary discs. The structure is simple, convenient and practical.
本发明一种光伏太阳能硅片减薄处理装置是这样实现的：本发明一种光伏太阳能硅片减薄处理装置由主体固定装置、传动装置和磨削装置组成，主体固定装置由接屑盘、橡胶环、连接套、限距标杆、限距孔、磨削工作台、连接轴和密封轴承组成，密封轴承置于接屑盘底端中部，连接轴一端穿过密封轴承置于接屑盘内，磨削工作台中部通过连接套置于连接轴上，所述磨削工作台上表面开有导液槽，所述导液槽为网纹状结构，所述磨削工作台中心位置导液槽密度大于边缘位置，多个橡胶环分别置于磨削工作台上，且呈环形分布，所述橡胶环的直径从中间向两侧逐渐增加，所述橡胶环的内壁上均匀置有多个凸点，所述磨削工作台上开有多个限距孔，限距标杆置于限距孔内，传动装置由第一中心齿轮、二级行星架总成、第二中心齿轮、第二齿圈、第一齿圈和一级行星架总成组成，第一中心齿轮置于连接轴上，且位于磨削工作台的下方，一级行星架总成置于连接轴上，所述一级行星架总成上的四个行星齿轮分别和第一中心齿轮相啮合，第一齿圈套置于一级行星架总成上，且分别和一级行星架总成上的四个行星齿轮相啮合，第二中心齿轮置于连接轴上，且位于磨削工作台的上方，二级行星架总成置于连接轴上，所述二级行星架总成上的四个行星齿轮分别和第二中心齿轮相啮合，第二齿圈套置于二级行星架总成上，且分别和二级行星架总成上的四个行星齿轮相啮合，磨削装置由磨削刀盘、磨削绒布、安装槽、导向套、磨削条、安装块、连接扣、排屑槽和磨削刀头组成，两个磨削刀盘分别置于第一齿圈和第二齿圈上，且中部分别通过连接套置于连接轴上，所述两个磨削刀盘分别位于磨削工作台的上下两侧，靠上的磨削刀盘下表面等角度开有多个安装槽，靠下的磨削刀盘上表面等角度开有多个安装槽，所述安装槽截面为T型，所述安装槽内置有橡胶垫，安装块置于安装槽内，磨削条置于安装块上，磨削刀头通过连接扣置于磨削条上，所述磨削刀头中间高度高于两侧，所述磨削刀头上开有多个排屑槽，所述排屑槽的进口宽，出口窄，所述磨削刀头的外表面和对应磨削刀盘靠近磨削工作台的表面齐平，所述两个磨削刀盘靠近磨削工作台的表面上分别置有一层磨削绒布，所述磨削绒布由鸵鸟绒毛制成。A photovoltaic solar silicon chip thinning processing device of the present invention is realized in the following way: a photovoltaic solar silicon chip thinning processing device of the present invention is composed of a main body fixing device, a transmission device and a grinding device, and the main body fixing device is composed of a chip tray, It consists of rubber ring, connecting sleeve, distance-limiting pole, distance-limiting hole, grinding table, connecting shaft and sealed bearing. The sealed bearing is placed in the middle of the bottom of the chip tray, and one end of the connecting shaft passes through the sealed bearing and is placed in the chip tray. , the middle part of the grinding table is placed on the connecting shaft through the connecting sleeve, the upper surface of the grinding table is provided with a liquid guide groove, the liquid guide groove is a reticulated structure, and the center position of the grinding table guides the liquid The groove density is greater than that of the edge position. A plurality of rubber rings are respectively placed on the grinding table and distributed in a ring shape. The diameter of the rubber ring gradually increases from the middle to both sides. The inner wall of the rubber ring is evenly equipped with a plurality of There are multiple distance-limiting holes on the grinding table, and the distance-limiting pole is placed in the distance-limiting holes. The transmission device consists of the first sun gear, the second planetary carrier assembly, the second sun gear, the second The ring gear, the first ring gear and the first-stage planetary carrier assembly are composed. The first sun gear is placed on the connecting shaft and is located under the grinding table. The first-stage planetary carrier assembly is placed on the connecting shaft. The first The four planetary gears on the first-stage planetary carrier assembly mesh with the first sun gear respectively, and the first ring gear is placed on the first-stage planetary carrier assembly, and are respectively connected with the four planetary gears on the first-stage planetary carrier assembly. Mesh, the second sun gear is placed on the connecting shaft and above the grinding table, the secondary planetary carrier assembly is placed on the connecting shaft, and the four planetary gears on the secondary planetary carrier assembly are respectively connected to the first The two sun gears are meshed, the second ring gear is placed on the secondary planetary carrier assembly, and meshed with the four planetary gears on the secondary planetary carrier assembly respectively, the grinding device consists of a grinding cutter head, a grinding flannelette , installation groove, guide sleeve, grinding bar, installation block, connecting buckle, chip removal groove and grinding head. The two grinding cutter heads are respectively placed on the first ring gear and the second ring gear, and the middle The two grinding cutterheads are respectively located on the upper and lower sides of the grinding table through the connecting sleeve. There are multiple installation grooves on the upper surface of the cutting disc at equal angles. The cross-section of the installation grooves is T-shaped. Rubber pads are built in the installation grooves. The installation blocks are placed in the installation grooves, and the grinding bars are placed on the installation blocks. The cutting head is placed on the grinding bar through the connecting buckle. The middle height of the grinding head is higher than the two sides. There are a plurality of chip removal grooves on the grinding head. The entrance of the chip removal groove is wide. The outlet is narrow, the outer surface of the grinding cutter head is flush with the surface of the corresponding grinding cutter head close to the grinding table, and a layer of grinding Flannel cloth, the grinding flannelette is made of ostrich fluff.
使用时，在光伏太阳能硅片进行精减薄前，首先将光伏太阳能硅片放置在橡胶环内，在两个磨削刀盘上的磨削绒布上分别滴入磨削液，将连接轴和外部动力装置相连接，通过限距孔调节限距标杆的高度，从而调节硅片磨削的厚度，外部动力转动带动连接轴转动，连接轴分别带动第一中心齿轮和第二中心齿轮转动过，第一中心齿轮带动一级行星架总成上的四个行星齿轮转动，一级行星架总成上的四个行星齿轮分别带动第一齿圈转动，第一齿圈带动靠下的磨削刀盘转动，靠下的磨削刀盘从而带动上表面安装槽内的磨削刀头转动，从而对硅片的下表面进行磨削，第二中心齿轮带动二级行星架总成上的四个行星齿轮转动，二级行星架总成上的四个行星齿轮分别带动第二齿圈转动，第二齿圈带动靠上的磨削刀盘转动，靠上的磨削刀盘从而带动下表面安装槽内的磨削刀头转动，从而对硅片的上表面进行磨削，从而同时对硅片的上下两面进行磨削，磨削掉的硅屑部分会被磨削绒布吸附，部分会落入排屑槽内，随着排屑槽内的硅屑不断增加，最后落在接屑盘内，所述磨削工作台上表面开有导液槽的设计，便于在磨削过程中，磨削液在磨削工作台上流动，辅助磨削工作的进行，所述磨削工作台中心位置安装槽密度大于边缘位置的设计，便于磨削液更好的留存在磨削工作台上，进一步提高磨削效果，所述橡胶环的直径从中间向两侧逐渐增加的设计，便于硅片的放入，并且也便于磨削刀头对硅片进行磨削，进一步提高磨削效果，所述橡胶环的设计，是经过多次试验后作出的最适应于本方案的设计，若橡胶环由金属材料制成，则在磨削过程中，容易对硅片侧面造成损伤，影响后期的加工使用，若橡胶环由陶瓷材料制成，则对硅片的固定稳定性较差，在磨削过程中，硅片容易出现晃动，影响磨削工作的进行，所述橡胶环的内壁上均匀置有多个凸点的设计，能够增加硅片和橡胶环之间的摩擦力，进一步提高硅片的稳定性，防止硅片在磨削过程中产生晃动，影响磨削效果，所述安装槽内置有橡胶垫的设计，能够更好的对磨削条进行固定，并且减少磨削过程中，产生的振动，所述磨削刀头中间高度高于两侧的设计，能够对硅片进行递进式的磨削，所述排屑槽的进口宽，出口窄的设计，便于硅屑的排出，所述磨削绒布由鸵鸟绒毛制成的设计，能够在磨削过程中不产生静电，防止磨削绒布吸附灰尘中的硬质颗粒，在磨削过程中划伤硅片，达到通过两级行星轮盘，对硅片进行双面磨削预减薄的目的。When in use, before the thinning of photovoltaic solar silicon wafers, the photovoltaic solar silicon wafers are first placed in the rubber ring, and the grinding fluid is respectively dripped on the grinding flannel on the two grinding cutter heads, and the connecting shaft and The external power device is connected, and the height of the distance-limiting pole is adjusted through the distance-limiting hole, thereby adjusting the thickness of the silicon wafer grinding. The external power rotates to drive the connecting shaft to rotate, and the connecting shaft drives the first central gear and the second central gear to rotate respectively. The first central gear drives the four planetary gears on the first-stage planetary carrier assembly to rotate, and the four planetary gears on the first-stage planetary carrier assembly respectively drive the first ring gear to rotate, and the first ring gear drives the lower grinding knife The disc rotates, and the lower grinding cutter head drives the grinding head in the mounting groove on the upper surface to rotate, thereby grinding the lower surface of the silicon wafer. The second central gear drives the four The planetary gears rotate, and the four planetary gears on the secondary planetary carrier assembly respectively drive the second ring gear to rotate, the second ring gear drives the upper grinding cutter head to rotate, and the upper grinding cutter head drives the lower surface installation The grinding cutter head in the groove rotates to grind the upper surface of the silicon wafer, so as to grind the upper and lower sides of the silicon wafer at the same time. Part of the ground silicon chips will be absorbed by the grinding flannelette, and some will fall into the In the chip discharge groove, as the silicon chips in the chip discharge groove continue to increase, they finally fall into the chip receiving tray. The upper surface of the grinding table is designed with a liquid guide groove, which is convenient for grinding during the grinding process. The liquid flows on the grinding table to assist the grinding work. The density of the installation groove at the center of the grinding table is greater than that at the edge, which facilitates the better retention of the grinding fluid on the grinding table and further improves the Grinding effect, the design of the diameter of the rubber ring gradually increases from the middle to both sides, which facilitates the insertion of the silicon wafer, and also facilitates the grinding of the silicon wafer by the grinding head, further improving the grinding effect. The design of the ring is the most suitable design for this project after many tests. If the rubber ring is made of metal materials, it is easy to cause damage to the side of the silicon wafer during the grinding process, which will affect the later processing and use. If the rubber ring is made of a ceramic material, then the fixing stability of the silicon chip is relatively poor. During the grinding process, the silicon chip is prone to shaking, which affects the progress of the grinding work. The design of a bump can increase the friction between the silicon chip and the rubber ring, further improve the stability of the silicon chip, prevent the silicon chip from shaking during the grinding process, and affect the grinding effect. The installation groove is built with rubber The design of the pad can better fix the grinding bar and reduce the vibration generated during the grinding process. The middle height of the grinding head is higher than the design on both sides, which can carry out progressive grinding on the silicon wafer. Grinding, the design of the wide inlet and narrow outlet of the chip removal groove is convenient for the discharge of silicon chips, and the design of the grinding flannelette made of ostrich fluff can not generate static electricity during the grinding process, preventing the grinding flannelette It absorbs the hard particles in the dust, scratches the silicon wafer during the grinding process, and achieves the purpose of pre-thinning the double-sided grinding of the silicon wafer through the two-stage planetary wheel.
有益效果。Beneficial effect.
一、结构简单，方便实用。1. The structure is simple, convenient and practical.
二、成本低廉，易于推广。Second, the cost is low and easy to promote.
三、能够提高硅片减薄效果。3. It can improve the thinning effect of the silicon wafer.
附图说明Description of drawings
图1为本发明一种光伏太阳能硅片减薄处理装置的立体拆分图。Fig. 1 is a three-dimensional disassembled view of a photovoltaic solar silicon wafer thinning processing device according to the present invention.
图2为本发明一种光伏太阳能硅片减薄处理装置磨削条的立体结构图。Fig. 2 is a three-dimensional structural diagram of a grinding bar of a photovoltaic solar silicon wafer thinning processing device according to the present invention.
附图中In the attached picture
其中零件为：接屑盘（1），第一中心齿轮（2），磨削刀盘（3），橡胶环（4），连接套（5），二级行星架总成（6），第二中心齿轮（7），第二齿圈（8），磨削绒布（9），限距标杆（10），限距孔（11），磨削工作台（12），安装槽（13），导向套（14），磨削条（15），第一齿圈（16），一级行星架总成（17），连接轴（18），密封轴承（19），安装块（20），连接扣（21），排屑槽（22），磨削刀头（23）。The parts are: chip catcher (1), first sun gear (2), grinding cutter head (3), rubber ring (4), connecting sleeve (5), second-stage planetary carrier assembly (6), second Second central gear (7), second ring gear (8), grinding flannelette (9), distance gauge pole (10), distance gauge hole (11), grinding table (12), installation groove (13), Guide sleeve (14), grinding bar (15), first ring gear (16), first-stage planet carrier assembly (17), connecting shaft (18), sealed bearing (19), mounting block (20), connection Buckle (21), flute (22), grinding cutter head (23).
具体实施方式：Detailed ways:
本发明一种光伏太阳能硅片减薄处理装置是这样实现的，使用时，在硅片进行精减薄前，首先将硅片放置在橡胶环（4）内，在两个磨削刀盘（3）上的磨削绒布（9）上分别滴入磨削液，将连接轴（18）和外部动力装置相连接，通过限距孔（11）调节限距标杆（10）的高度，从而调节硅片磨削的厚度，外部动力转动带动连接轴（18）转动，连接轴（18）分别带动第一中心齿轮（2）和第二中心齿轮（7）转动过，第一中心齿轮（2）带动一级行星架总成（17）上的四个行星齿轮转动，一级行星架总成（17）上的四个行星齿轮分别带动第一齿圈（16）转动，第一齿圈（16）带动靠下的磨削刀盘（3）转动，靠下的磨削刀盘（3）从而带动上表面安装槽（13）内的磨削刀头（23）转动，从而对硅片的下表面进行磨削，第二中心齿轮（7）带动二级行星架总成（6）上的四个行星齿轮转动，二级行星架总成（6）上的四个行星齿轮分别带动第二齿圈（8）转动，第二齿圈（8）带动靠上的磨削刀盘（3）转动，靠上的磨削刀盘（3）从而带动下表面安装槽（13）内的磨削刀头（23）转动，从而对硅片的上表面进行磨削，从而同时对硅片的上下两面进行磨削，磨削掉的硅屑部分会被磨削绒布（9）吸附，部分会落入排屑槽（22）内，随着排屑槽（22）内的硅屑不断增加，最后落在接屑盘（1）内，所述磨削工作台（12）上表面开有导液槽的设计，便于在磨削过程中，磨削液在磨削工作台（12）上流动，辅助磨削工作的进行，所述磨削工作台（12）中心位置导液槽密度大于边缘位置的设计，便于磨削液更好的留存在磨削工作台（12）上，进一步提高磨削效果，所述橡胶环（4）的直径从中间向两侧逐渐增加的设计，便于硅片的放入，并且也便于磨削刀头（23）对硅片进行磨削，进一步提高磨削效果，所述橡胶环（4）的设计，是经过多次试验后作出的最适应于本方案的设计，若橡胶环（4）由金属材料制成，则在磨削过程中，容易对硅片侧面造成损伤，影响后期的加工使用，若橡胶环（4）由陶瓷材料制成，则对硅片的固定稳定性较差，在磨削过程中，硅片容易出现晃动，影响磨削工作的进行，所述橡胶环（4）的内壁上均匀置有多个凸点的设计，能够增加硅片和橡胶环（4）之间的摩擦力，进一步提高硅片的稳定性，防止硅片在磨削过程中产生晃动，影响磨削效果，所述安装槽（13）内置有橡胶垫的设计，能够更好的对磨削条（15）进行固定，并且减少磨削过程中，产生的振动，所述磨削刀头（23）中间高度高于两侧的设计，能够对硅片进行递进式的磨削，所述排屑槽（22）的进口宽，出口窄的设计，便于硅屑的排出，所述磨削绒布（9）由鸵鸟绒毛制成的设计，能够在磨削过程中不产生静电，防止磨削绒布（9）吸附灰尘中的硬质颗粒，在磨削过程中划伤硅片，达到通过两级行星轮盘，对硅片进行双面磨削预减薄的目的。A photovoltaic solar silicon chip thinning processing device of the present invention is realized in this way. When in use, before the silicon chip is refined and thinned, the silicon chip is first placed in the rubber ring (4), and the two grinding cutter heads ( 3) Grinding liquid is dripped into the grinding flannelette (9) on the top, connect the connecting shaft (18) with the external power device, and adjust the height of the distance-limiting pole (10) through the distance-limiting hole (11), thereby adjusting The thickness of the silicon wafer is ground, the external power rotation drives the connecting shaft (18) to rotate, and the connecting shaft (18) drives the first central gear (2) and the second central gear (7) to rotate respectively, and the first central gear (2) Drive the four planetary gears on the primary planetary carrier assembly (17) to rotate, and the four planetary gears on the primary planetary carrier assembly (17) respectively drive the first ring gear (16) to rotate, and the first ring gear (16 ) drives the lower grinding cutter head (3) to rotate, and the lower grinding cutter head (3) drives the grinding head (23) in the mounting groove (13) on the upper surface to rotate, thereby The surface is ground, the second sun gear (7) drives the four planetary gears on the secondary planetary carrier assembly (6) to rotate, and the four planetary gears on the secondary planetary carrier assembly (6) drive the second gear The ring (8) rotates, the second ring gear (8) drives the upper grinding cutter head (3) to rotate, and the upper grinding cutter head (3) drives the grinding knife in the mounting groove (13) on the lower surface The head (23) rotates to grind the upper surface of the silicon wafer, so as to grind the upper and lower sides of the silicon wafer at the same time. Part of the ground silicon chips will be absorbed by the grinding flannelette (9), and some will fall into the In the chip removal groove (22), as the silicon chips in the chip removal groove (22) continue to increase, they finally fall into the chip receiving tray (1), and the upper surface of the grinding table (12) is provided with a liquid guide groove The design facilitates the flow of grinding fluid on the grinding table (12) during the grinding process to assist the grinding work. The density of the liquid guide groove at the center of the grinding table (12) is greater than that at the edge The design makes it easier for the grinding fluid to be better retained on the grinding table (12) to further improve the grinding effect. The diameter of the rubber ring (4) gradually increases from the middle to both sides, which is convenient for placing silicon wafers. It is also convenient for the grinding head (23) to grind the silicon wafer, further improving the grinding effect. The design of the rubber ring (4) is the most suitable design for this program after many tests , if the rubber ring (4) is made of metal material, it is easy to cause damage to the side of the silicon wafer during the grinding process, which will affect the later processing and use; if the rubber ring (4) is made of ceramic material, it will damage the silicon wafer The fixation stability of the rubber ring (4) is relatively poor. During the grinding process, the silicon wafer is prone to shaking, which affects the progress of the grinding work. The inner wall of the rubber ring (4) is designed with multiple bumps evenly, which can increase the The friction between the silicon wafer and the rubber ring (4) further improves the stability of the silicon wafer, preventing the silicon wafer from shaking during the grinding process and affecting the grinding effect. The installation groove (13) is designed with a built-in rubber pad, The grinding bar (15) can be better fixed, and the vibration generated during the grinding process can be reduced. The middle height of the cutting head (23) is designed to be higher than that of both sides, which can carry out progressive grinding on silicon wafers. The design of the wide inlet and narrow outlet of the chip discharge groove (22) facilitates the discharge of silicon chips. The design of the grinding flannelette (9) made of ostrich fluff can prevent static electricity from being generated during the grinding process, preventing the grinding flannelette (9) from absorbing hard particles in the dust and scratching the silicon wafer during the grinding process , to achieve the purpose of double-sided grinding and pre-thinning of silicon wafers through two-stage planetary wheels.
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| CN109760220B (en) * | 2019-01-21 | 2020-04-21 | 中国科学院半导体研究所 | Semiconductor optoelectronic device substrate thinning method |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2301081A2 (en) * | 2008-06-03 | 2011-03-30 | Vserv Technologies Corp | System for simultaneous tabbing and stringing of solar cells |
| CN102194724A (en) * | 2010-03-12 | 2011-09-21 | 普雷茨特光电子有限公司 | Device and method for monitoring thickness of silicon wafer and device for thinning silicon wafer |
| CN202332917U (en) * | 2011-11-01 | 2012-07-11 | 宁波市鑫友光伏有限公司 | Device for producing ultrathin silicon wafer of solar cell |
| CN104319315A (en) * | 2014-11-13 | 2015-01-28 | 苏州润阳光伏科技有限公司 | Device for monitoring silicon wafer texturing thinning amount online |
| CN106191863A (en) * | 2016-08-17 | 2016-12-07 | 岑溪市东正动力科技开发有限公司 | A kind of manufacture of solar cells quick thinning device of technique silicon chip |
-
2017
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2301081A2 (en) * | 2008-06-03 | 2011-03-30 | Vserv Technologies Corp | System for simultaneous tabbing and stringing of solar cells |
| CN102194724A (en) * | 2010-03-12 | 2011-09-21 | 普雷茨特光电子有限公司 | Device and method for monitoring thickness of silicon wafer and device for thinning silicon wafer |
| CN202332917U (en) * | 2011-11-01 | 2012-07-11 | 宁波市鑫友光伏有限公司 | Device for producing ultrathin silicon wafer of solar cell |
| CN104319315A (en) * | 2014-11-13 | 2015-01-28 | 苏州润阳光伏科技有限公司 | Device for monitoring silicon wafer texturing thinning amount online |
| CN106191863A (en) * | 2016-08-17 | 2016-12-07 | 岑溪市东正动力科技开发有限公司 | A kind of manufacture of solar cells quick thinning device of technique silicon chip |
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