CN107227123A - The manufacture method of diced chip bonding film and semiconductor device - Google Patents

Abstract

The present invention provides the manufacture method of diced chip bonding film and semiconductor device, the diced chip bonding film can suppress from cutting sheet to float in cooling extension process chips bonding film, and can be in pickup process from the semiconductor chip of cutting sheet suitably release band die bonding film.A kind of diced chip bonding film, has：Cutting sheet；With the die bonding film being layered in cutting sheet, peeling force A at 23 DEG C of cutting sheet and die bonding film is in more than 0.1N/20mm and below 0.25N/20mm scope, peeling force B at 15 DEG C of cutting sheet and die bonding film is under following peeling force B condition determination in more than 0.15N/20mm and below 0.5N/20mm scope, and die bonding film is used by applying tensile stress and being broken.

Description

Dicing die-bonding film and method for manufacturing semiconductor device

technical field

The present invention relates to a dicing die-bonding film and a method for manufacturing a semiconductor device.

Background technique

Conventionally, dicing die-bonding films are sometimes used in the manufacture of semiconductor devices. The dicing die-bonding film is obtained by providing the die-bonding film on a dicing sheet so that it can be peeled off. In the manufacture of a semiconductor device, a semiconductor wafer is held on a die-bonding film for dicing the die-bonding film, and the semiconductor wafer is diced to form individual chips. Then, the chip is peeled from the dicing sheet together with the die-bonding film, and is fixed to adherends such as a lead frame through the die-bonding film.

When using a dicing die-bonding film in which a die-bonding film is laminated on a dicing sheet and dicing a semiconductor wafer while being held by the die-bonding film, it is necessary to cut the die-bonding film and the semiconductor wafer simultaneously. However, in the usual dicing method using a diamond blade, there are concerns about sticking of the die-bonding film and the dicing sheet due to the influence of heat generated during dicing, fixation of semiconductor chips due to generation of cutting chips, and adhesion of cutting chips to semiconductor chips. chip side, etc., therefore, the cutting speed needs to be reduced, leading to an increase in cost.

Therefore, in recent years, a method has been proposed in which a modified region is formed by irradiating laser light on a pre-segmentation line in a semiconductor wafer so that the semiconductor wafer can be easily divided along the pre-segmentation line, and then by bonding the semiconductor wafer After dicing the die-bonding film, the dicing die-bonding film is expanded (hereinafter also referred to as "cooling expansion") at a low temperature (for example, -15°C to 5°C) to break the semiconductor wafer and the die-bonding film to obtain each Semiconductor chip (semiconductor chip with die-bonding film) (for example, see Patent Document 1). This method is a so-called method called Stealth Dicing (registered trademark).

prior art literature

patent documents

Patent Document 1: Japanese Patent Laid-Open No. 2009-164556

Contents of the invention

The problem to be solved by the invention

However, conventional stealth dicing has a problem that the semiconductor chip with the die-bonding film may be peeled off from the dicing sheet during the period from cooling and spreading to picking up. On the other hand, there is a problem that the chip cannot be peeled from the dicing sheet at the time of picking up, and it may not be picked up properly.

The inventors of the present invention conducted intensive studies on these problems, and found that the peeling force between the dicing sheet and the die-bonding film becomes low due to cooling extended to a low-temperature condition, and the die-bonding film sometimes floats from the dicing sheet. For this reason, the semiconductor chip with the die-bonding film may be peeled off from the dicing sheet before picking up.

In addition, pickup is performed at normal temperature (for example, 23 degreeC). The inventors of the present invention have therefore found that, when using a dicing die-bonding film whose peeling force between the dicing sheet and the die-bonding film is relatively high at low temperature, the peeling force becomes too high at the time of picking up, which is due to For this reason, it may not be picked up properly.

The present invention has been made in view of the aforementioned problems, and an object of the present invention is to provide a dicing die-bonding film capable of suppressing the die-bonding film from floating from the dicing sheet in the cooling and spreading process and capable of being detached appropriately from the dicing sheet in the picking-up process. Semiconductor chip with die-bonding film.

Another object of the present invention is to provide a method of manufacturing a semiconductor device using the dicing die-bonding film.

solutions to problems

In order to solve the above-mentioned problems, the inventors of the present invention conducted studies on dicing die-bonding films. As a result, it was found that by adopting a dicing die-bonding film having the following configuration, the die-bonding film can be suppressed from floating from the dicing sheet in the cooling and spreading process, and the semiconductor chip with the die-bonding film can be detached from the dicing sheet in the picking-up process appropriately. , thus completing the present invention.

That is, the dicing die bonding film of the present invention is characterized in that it has:

cutting pieces; and

A die-bonding film laminated on the aforementioned dicing sheet,

The peel force A at 23° C. of the dicing sheet and the die-bonding film is in the range of 0.1 N/20 mm or more and 0.25 N/20 mm or less under the following peel force A measurement conditions,

The peeling force B at -15°C of the dicing sheet and the die-bonding film is in the range of 0.15 N/20 mm or more and 0.5 N/20 mm or less under the following peeling force B measurement conditions,

The aforementioned die-bonding film is used by being ruptured by applying tensile tension.

<Measurement conditions of peel force A>

T-peel test

Peeling speed 300mm/min

<Measurement conditions of peel force B>

T-peel test

The peeling speed is 300 mm/min.

According to the above configuration, the peeling force A is in the range of 0.1 N/20 mm or more and 0.25 N/20 mm or less under the measurement conditions of the peeling force A, so that the die-bonding film with die can be peeled appropriately from the dicing sheet in the pick-up process. semiconductor chip. In addition, since the peeling force B is in the range of 0.15 N/20 mm to 0.5 N/20 mm under the measurement conditions of the peeling force B, it is possible to suppress the die-bonding film from floating from the dicing sheet in the cooling and spreading step.

In addition, the method for manufacturing a semiconductor device of the present invention is characterized in that it includes the following steps:

Process A, laminating the semiconductor wafer on the dicing die bonding film;

Step B, expanding the dicing die-bonding film at a temperature below 0°C to at least break the die-bonding film to obtain a chip with the die-bonding film; and

Step C, picking up the aforementioned chip with the die-bonding film,

The aforementioned dicing die-bonding film has:

cutting pieces; and

A die-bonding film laminated on the aforementioned dicing sheet,

The peel force A at 23° C. of the dicing sheet and the die-bonding film is in the range of 0.1 N/20 mm or more and 0.25 N/20 mm or less under the following peel force A measurement conditions,

The peeling force B in -15 degreeC of the said dicing sheet and the said die-bonding film exists in the range of 0.15 N/20mm or more and 0.5N/20mm or less under the measurement conditions of the following peeling force B.

<Measurement conditions of peel force A>

T-peel test

Peeling speed 300mm/min

<Measurement conditions of peel force B>

T-peel test

The peeling speed is 300 mm/min.

According to the aforementioned configuration, the peeling force A is in the range of 0.1 N/20 mm or more and 0.25 N/20 mm or less under the measurement conditions of the peeling force A, so that it can be peeled off from the dicing sheet appropriately in step C (pick-up step). Semiconductor chip with die-bonding film. In addition, the peeling force B is in the range of 0.15 N/20 mm to 0.5 N/20 mm under the measurement conditions of the peeling force B, so that the die-bonding film can be suppressed from falling from the dicing sheet in the step B (cooling expansion step). float.

It should be noted that the method of manufacturing a semiconductor device according to the present invention includes the following cases: the case where the semiconductor wafer and the die-bonding film are simultaneously broken in the cooling and spreading step; the case where only the die-bonding film is broken in the cooling and spreading step .

The effect of the invention

According to the present invention, it is possible to provide a dicing die-bonding film capable of suppressing the die-bonding film from floating from the dicing sheet in the cooling and spreading step and capable of appropriately peeling the semiconductor chip with the die-bonding film from the dicing sheet in the picking-up step. In addition, a method of manufacturing a semiconductor device using the dicing die-bonding film can be provided.

Description of drawings

FIG. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to one embodiment of the present invention.

FIG. 2 is a schematic cross-sectional view illustrating a method of manufacturing the semiconductor device according to the present embodiment.

FIG. 3 is a schematic cross-sectional view illustrating a method of manufacturing the semiconductor device according to the present embodiment.

(a) and (b) of FIG. 4 are schematic cross-sectional views for explaining the method of manufacturing the semiconductor device of the present embodiment.

FIG. 5 is a schematic cross-sectional view illustrating a method of manufacturing a semiconductor device according to this embodiment.

(a) and (b) of FIG. 6 are schematic cross-sectional views for explaining a method of manufacturing a semiconductor device according to another embodiment.

7 is a schematic cross-sectional view illustrating another method of manufacturing a semiconductor device according to another embodiment.

Explanation of reference signs

1 substrate

2 adhesive layers

3 Die Bonding Film

4 Semiconductor wafers

5 Semiconductor chips

6 adherend

7 Bonding wires

8 Encapsulation resin

10 Dicing Die Bonding Film

11 cutting pieces

detailed description

(Dicing Die Bonding Film)

Hereinafter, a dicing die-bonding film according to one embodiment of the present invention will be described. FIG. 1 is a schematic cross-sectional view showing a dicing die-bonding film according to one embodiment of the present invention.

As shown in FIG. 1 , the dicing die-bonding film 10 has a structure in which the die-bonding film 3 is laminated on the dicing sheet 11 . The dicing sheet 11 has a structure in which the adhesive layer 2 is laminated on the base material 1 . The die-bonding film 3 is provided on the adhesive layer 2 .

It should be noted that, in this embodiment, the case where there is a portion 2b not covered by the die-bonding film 3 in the dicing sheet 11 is described, but the dicing die-bonding film of the present invention is not limited to this example, and may be covered according to Die-bonding film is laminated on the dicing sheet in the form of the entire dicing sheet.

The peeling force A at 23° C. of the dicing sheet 11 and the die-bonding film 3 is in the range of 0.1 N/20 mm to 0.25 N/20 mm, preferably 0.12 N/20 mm to 0.23 It exists in the range of N/20mm or less, More preferably, it exists in the range of 0.14N/20mm or more and 0.22N/20mm or less.

<Measurement conditions of peel force A>

T-peel test

Peeling speed 300mm/min

The peeling force A is in the range of 0.1 N/20 mm to 0.25 N/20 mm under the measurement conditions of the peeling force A, so that the semiconductor with die-bonding film 3 can be peeled appropriately from the dicing sheet 11 in the pick-up process. Chip 5 (see (b) of FIG. 4 ).

The peeling force B at -15°C between the dicing sheet 11 and the die-bonding film 3 is in the range of 0.15 N/20 mm to 0.5 N/20 mm, preferably 0.20 N/20 mm or more under the following peeling force B measurement conditions. It exists in the range of 0.45N/20mm or less, More preferably, it exists in the range of 0.24N/20mm or more and 0.40N/20mm or less.

<Measurement conditions of peel force B>

T-peel test

Peeling speed 300mm/min

Since the peeling force B is in the range of 0.15 N/20 mm to 0.5 N/20 mm under the measurement conditions of the peeling force B, it is possible to suppress the die-bonding film 3 from floating from the dicing sheet 11 in the cooling and spreading step.

The aforementioned peeling force B is preferably greater than the aforementioned peeling force A. When the aforementioned peeling force B is greater than the aforementioned peeling force A, it is possible to further suppress the die-bonding film 3 from floating from the dicing sheet 11 in the cooling and spreading process, and it is possible to more suitably peel the die-bonding film 3 from the dicing sheet 11 in the picking-up process. semiconductor chip 5.

The difference between the peeling force A and the peeling force B [(peeling force B)−(peeling force A)] is preferably 0.03 N/20 mm or more, more preferably 0.05 N/20 mm or more. In addition, the larger the difference [(peeling force B)-(peeling force A)], the better, but it is, for example, 0.5 N/20 mm or less.

The more detailed measurement method of the said peeling force A and the said peeling force B employs the method described in an Example.

(Die Bonding Film)

The glass transition temperature (Tg) of the die-bonding film 3 is preferably 50°C or lower, more preferably 40°C or lower. When the glass transition temperature (Tg) of the die-bonding film 3 is 50 degrees C or less, the difference of the peeling force of normal temperature and low temperature can be shown effectively. Moreover, the glass transition temperature (Tg) of the die-bonding film 3 should be as low as possible, but it is 0 degreeC or more from a pick-up viewpoint.

A more detailed measuring method of the aforementioned glass transition temperature (Tg) adopts the method described in the Examples.

The tensile storage modulus A at 23° C. of the die-bonding film 3 is preferably not less than 5 MPa and not more than 3000 MPa, more preferably not less than 10 MPa and not more than 1000 MPa. When the said tensile storage modulus A is 5 MPa or more, it can pick up suitably in a pick-up process. On the other hand, when the tensile storage modulus A is 3000 MPa or less, it is possible to prevent the die-bonding film 3 from being peeled off from the dicing sheet 11 in the period from the cooling expansion step to the pick-up step.

The tensile storage modulus B at −15° C. of the die-bonding film 3 is preferably not less than 1 GPa and not more than 10 GPa, more preferably not less than 2 GPa and not more than 5 GPa. When the tensile storage elastic modulus B is 1 GPa or more, the die-bonding film 3 is suitably broken in the cooling and expanding step. On the other hand, when the said tensile storage modulus B is 10 GPa or less, it can suppress suitably that the die-bonding film 3 floats from the dicing sheet 11 in a cooling expansion process.

The ratio of the aforementioned tensile storage modulus A to the aforementioned tensile storage modulus B [(tensile storage modulus B)/(tensile storage modulus A)] is preferably 2 or more, more preferably 30 or more . When the aforementioned ratio [(tensile storage modulus B)/(tensile storage modulus A)] is 2 or more, it is possible to further suppress the die-bonding film 3 from floating from the dicing sheet 11 in the cooling expansion process, and it is possible to The semiconductor chip 5 with the die-bonding film 3 is more suitably peeled off from the dicing sheet 11 in a pick-up process. In addition, the larger the ratio [(tensile storage modulus B)/(tensile storage modulus A)], the more preferable, but it is, for example, 300 or less from the viewpoint of a balance between cutting and pick-up properties.

The more detailed measurement methods of the aforementioned tensile storage modulus A and the aforementioned tensile storage modulus B employ the methods described in Examples.

As shown in FIG. 1 , the layer configuration of the die-bonding film 3 includes a single-layer adhesive layer. In addition, in this specification, a single layer means the layer which consists of the same composition, and includes the layer which laminated|stacked the layer which consists of the same composition.

However, the die-bonding film in the present invention is not limited to this example. For example, it may be a multilayer structure in which two or more adhesive layers having different compositions are laminated.

Examples of the material constituting the die-bonding film 3 include thermosetting resins. In addition, a thermoplastic resin and a thermosetting resin may be used in combination.

As said thermosetting resin, a phenolic resin, an amino resin, an unsaturated polyester resin, an epoxy resin, a polyurethane resin, a silicone resin, a thermosetting polyimide resin, etc. are mentioned. These resins can be used individually or in combination of 2 or more types. In particular, an epoxy resin containing less ionic impurities and the like that corrode semiconductor elements is preferable. Moreover, as a hardening|curing agent of an epoxy resin, a phenolic resin is preferable.

The aforementioned epoxy resin is not particularly limited as long as it is an epoxy resin commonly used in adhesive compositions, for example, bisphenol A type, bisphenol F type, bisphenol S type, brominated bisphenol A type, hydrogenated bisphenol Phenol A type, bisphenol AF type, biphenyl type, naphthalene type, fluorene type, phenol novolac type, o-cresol novolac type, trihydroxyphenylmethane type, tetrakis(phenylhydroxyl)ethane type and other difunctional Epoxy resin, multifunctional epoxy resin; epoxy resin of hydantoin type, triglycidyl isocyanurate type, glycidyl amine type, etc. These can be used individually or in combination of 2 or more types. Among these epoxy resins, novolak-type epoxy resins, biphenyl-type epoxy resins, trishydroxyphenylmethane-type resins, and tetrakis(phenylhydroxy)ethane-type epoxy resins are particularly preferable. This is because these epoxy resins are rich in reactivity with a phenolic resin as a curing agent and are excellent in heat resistance and the like.

The aforementioned phenolic resin functions as a curing agent for the aforementioned epoxy resin, and examples thereof include phenol novolak resins, phenol aralkyl resins, cresol novolac resins, t-butylphenol novolak resins, and nonylphenol novolak resins. Such as novolak type phenolic resin, resole type phenolic resin, polyoxystyrene such as polyoxystyrene, etc. These can be used individually or in combination of 2 or more types. Among these phenol resins, phenol novolak resins and phenol aralkyl resins are particularly preferred. This is because the connection reliability of the semiconductor device can be improved.

The compounding ratio of the said epoxy resin and a phenolic resin is preferably compounded so that the hydroxyl group in a phenolic resin may become 0.5-2.0 equivalent with respect to 1 equivalent of epoxy groups in the said epoxy resin component, for example. More preferably, it is 0.8-1.2 equivalent. That is, it is because if the compounding ratio of both is out of the said range, sufficient hardening reaction will not progress, and the characteristic of an epoxy resin hardened|cured material will deteriorate easily.

Examples of the aforementioned thermoplastic resin include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymer, ethylene-acrylic acid copolymer, ethylene-acrylate copolymer, polybutylene Diene resin, polycarbonate resin, thermoplastic polyimide resin, polyamide resin such as 6-nylon and 6,6-nylon, phenoxy resin, acrylic resin, saturated polyester resin such as PET and PBT, polyamide imide resin, fluororesin, etc. These thermoplastic resins can be used individually or in combination of 2 or more types. Among these thermoplastic resins, acrylic resins having few ionic impurities, high heat resistance, and ensuring the reliability of semiconductor elements are particularly preferable.

The acrylic resin is not particularly limited, and examples thereof include one or two esters of acrylic acid or methacrylic acid having a linear or branched chain alkyl group having 30 or less carbon atoms, especially a carbon number of 4 to 18. Polymers (acrylic copolymers) etc. as the above ingredients. Examples of the alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl, tert-butyl, isobutyl, pentyl, isopentyl, hexyl, heptyl, cyclohexyl, 2 -Ethylhexyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl, undecyl, lauryl, tridecyl, tetradecyl, stearyl, octadecyl Alkyl, or dodecyl, etc.

Among the above-mentioned acrylic resins, acrylic copolymers are particularly preferable for the reason of improving cohesive force. Examples of the above-mentioned acrylic copolymer include copolymers of ethyl acrylate and methyl methacrylate, copolymers of acrylic acid and acrylonitrile, and copolymers of butyl acrylate and acrylonitrile.

In addition, there are no particular limitations on other monomers that form the aforementioned polymer, and examples thereof include acrylic acid, methacrylic acid, carboxyethyl acrylate, carboxypentyl acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. Carboxyl group-containing monomers such as; maleic anhydride or itaconic anhydride, etc.; acid anhydride monomers such as (meth)acrylate-2-hydroxyethyl, (meth)acrylate-2-hydroxypropyl Base) -4-hydroxybutyl acrylate, -6-hydroxyhexyl (meth)acrylate, -8-hydroxyoctyl (meth)acrylate, -10-hydroxydecyl (meth)acrylate, (methyl) Hydroxyl-containing monomers such as 12-hydroxylauryl acrylate or (4-hydroxymethylcyclohexyl)-methyl acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide- Sulfonic acid-containing monomers such as 2-methylpropanesulfonic acid, (meth)acrylamidopropanesulfonic acid, sulfopropyl (meth)acrylate or (meth)acryloyloxynaphthalenesulfonic acid; or Phosphate-containing monomers such as 2-hydroxyethylacryloyl phosphate, etc.

The compounding ratio of the thermosetting resin is not particularly limited as long as the die-bonding film 3 functions as a thermosetting type when heated under predetermined conditions. It exists in the range of weight%, More preferably, it exists in the range of 10 to 50 weight%.

The die-bonding film 3 contains an epoxy resin that is liquid at 23°C, a phenolic resin that is liquid at 23°C, and an acrylic resin with a glass transition temperature (Tg) of 50°C or lower, and the total of them is preferably Content is 20 weight% or more with respect to the whole die-bonding film 3. Thereby, the peeling force of the dicing sheet 11 and the die-bonding film 3 at low temperature can be improved.

In addition, being liquid at 23°C means that the viscosity at 23°C is less than 5000 Pa·s. The said viscosity means the value measured using the model HAAKE RotoVISCO1 manufactured by Thermo Scientific Corporation.

When the die-bonding film 3 of the present invention is crosslinked to some extent in advance, a polyfunctional compound that reacts with the functional group at the molecular chain end of the polymer may be added as a crosslinking agent during production. Thereby, the adhesive characteristic at high temperature can be improved, and the improvement of heat resistance can be aimed at.

A conventionally known crosslinking agent can be used as said crosslinking agent. In particular, polyisocyanate compounds such as toluene diisocyanate, diphenylmethane diisocyanate, p-phenylene diisocyanate, 1,5-naphthalene diisocyanate, and adducts of polyhydric alcohol and diisocyanate are more preferable. As an addition amount of a crosslinking agent, 0.05-7 weight part is preferable with respect to 100 weight part of said polymers normally. When the quantity of a crosslinking agent exceeds 7 weight part, since adhesive force will fall, it is unpreferable. On the other hand, when it is less than 0.05 weight part, since cohesive force is insufficient, it is unpreferable. In addition, together with such a polyisocyanate compound, other polyfunctional compounds, such as an epoxy resin, may be contained together as needed.

In addition, a filler may be appropriately compounded in the die-bonding film 3 according to the use thereof. Compounding of fillers can impart electrical conductivity, improve thermal conductivity, adjust elastic modulus, and the like. Examples of the aforementioned filler include inorganic fillers and organic fillers, and inorganic fillers are preferred from the viewpoint of improving handling properties, improving thermal conductivity, adjusting melt viscosity, and imparting thixotropy. The aforementioned inorganic filler is not particularly limited, and examples thereof include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, and aluminum borate. Whiskers, boron nitride, crystalline silica, amorphous silica, etc. These can be used individually or in combination of 2 or more types. From the viewpoint of improving thermal conductivity, aluminum oxide, aluminum nitride, boron nitride, crystalline silica, and amorphous silica are preferable. In addition, crystalline silica or amorphous silica is preferable from the viewpoint of a good balance of the above properties. In addition, a conductive substance (conductive filler) can also be used as the inorganic filler for the purpose of imparting electrical conductivity, improving thermal conductivity, and the like. Examples of the conductive filler include spherical, acicular, and scaly metal powders of silver, aluminum, gold, copper, nickel, and conductive alloys, metal oxides such as alumina, amorphous carbon black, and graphite.

The average particle diameter of the aforementioned filler is preferably 0.005 to 10 μm, more preferably 0.005 to 1 μm. This is because wettability and adhesiveness with respect to an adherend can be made favorable by making the average particle diameter of the said filler into 0.005 micrometer or more. Moreover, by making it 10 micrometers or less, the effect of the filler added for imparting the above-mentioned each characteristic can be made sufficient, and heat resistance can be ensured. In addition, the average particle diameter of a filler is the value calculated|required with the photometric particle size distribution meter (manufactured by HORIBA, apparatus name; LA-910), for example.

In addition, in the die-bonding film 3, other additives may be suitably compounded as needed besides the said filler. As other additives, a flame retardant, a silane coupling agent, an ion trapping agent, etc. are mentioned, for example. As said flame retardant, antimony trioxide, antimony pentoxide, brominated epoxy resin, etc. are mentioned, for example. These can be used individually or in combination of 2 or more types. Examples of the silane coupling agent include β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxy Propylmethyldiethoxysilane, etc. These compounds can be used individually or in combination of 2 or more types. Examples of the ion-scavenging agent include hydrotalcites, bismuth hydroxide, and the like. These can be used individually or in combination of 2 or more types.

The thickness (total thickness in the case of a laminate) of the die-bonding film 3 is not particularly limited, and can be selected from, for example, a range of 1 to 200 μm, preferably 5 to 100 μm, and more preferably 10 to 80 μm.

(cut sheet)

The dicing sheet 11 of this embodiment has a structure in which the adhesive layer 2 is laminated on the base material 1 . However, the dicing sheet in the present invention is not limited to this example as long as the die-bonding film 3 can be fixed when the die-bonding film 3 is broken and separated into pieces in the cooling expansion step. For example, there may be other layers between the substrate and the adhesive layer.

(Substrate)

The base material 1 preferably has ultraviolet transmittance, and serves as a strong base for the dicing die-bonding film 10 . For example, low-density polyethylene, linear polyethylene, medium-density polyethylene, high-density polyethylene, ultra-low-density polyethylene, random copolymer polypropylene, block copolymer polypropylene, homopolypropylene, polypropylene Polyolefins such as butene and polymethylpentene, ethylene-vinyl acetate copolymer, ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylate (random, alternating) copolymerization ethylene-butene copolymer, ethylene-hexene copolymer, polyurethane, polyethylene terephthalate, polyethylene naphthalate and other polyesters, polycarbonate, polyimide, poly Ether ether ketone, polyimide, polyetherimide, polyamide, fully aromatic polyamide, polyphenylene sulfide, aramid (paper), glass, glass cloth, fluororesin, polyvinyl chloride, polyvinylidene Vinyl chloride, cellulose resin, silicone resin, metal (foil), paper, etc.

Moreover, as a material of the base material 1, polymers, such as the crosslinked body of the said resin, are mentioned. The aforementioned plastic film may be used unstretched, or a plastic film subjected to uniaxial or biaxial stretching treatment may be used as needed. The semiconductor chip 5 with the die-bonding film 3 is expanded by thermally shrinking (heating and expanding) the outer peripheral portion of the semiconductor wafer of the base material 1 after cooling and expanding the resin sheet to which heat shrinkability has been imparted by stretching or the like. The distance between them can facilitate the recycling of the semiconductor chips 5 .

In order to improve the adhesion and retention of adjacent layers, the surface of the substrate 1 can be subjected to conventional surface treatment, such as chemical treatment such as chromic acid treatment, ozone exposure, flame exposure, high-voltage electric shock exposure, and ionizing radiation treatment. Or physical treatment; coating treatment using a primer (such as an adhesive substance described later). The substrate 1 can be suitably selected from the same type or from different types, and a substrate obtained by blending several types of materials can be used as needed. In addition, in order to impart antistatic performance to the base material 1, it is possible to set a thickness of The vapor deposition layer of the left and right conductive substances. The substrate 1 may be a single layer or a multilayer of two or more types.

The tensile strength of the substrate 1 at -15°C at an elongation rate of 100% is preferably 10 N/10 mm or more, more preferably 12 N/10 mm or more. When the tensile strength of the substrate 1 at -15°C elongation of 100% is 10N/10mm or more, the cutting force is efficiently transmitted to the wafer portion, and uniform cutting is achieved.

The thickness of the substrate 1 is not particularly limited and can be appropriately determined, but is generally about 5 to 200 μm.

(adhesive layer)

The tensile storage modulus A at 23° C. of the pressure-sensitive adhesive layer 2 is preferably 1 MPa to 100 MPa, more preferably 2 MPa to 30 MPa. When the said tensile storage modulus A is 1 MPa or more, the chip with the die-bonding film 3 can be picked up more suitably in a pick-up process. On the other hand, when the tensile storage modulus A is 100 MPa or less, it is possible to prevent the die-bonding film 3 from being peeled off from the dicing sheet 11 after the cooling expansion step to the pick-up step.

The tensile storage modulus B at -15°C of the pressure-sensitive adhesive layer 2 is preferably 5 MPa or more and 500 MPa or less, and more preferably 10 MPa or more and 200 MPa or less. When the above-mentioned tensile storage modulus B is 5 MPa or more, the cutting force can be efficiently transmitted to the adhesive film at the time of cutting. On the other hand, when the tensile storage modulus B is 500 MPa or less, it is possible to suitably suppress the die-bonding film 3 from floating from the dicing sheet 11 in the cooling and spreading step.

The ratio of the aforementioned tensile storage modulus A to the aforementioned tensile storage modulus B [(tensile storage modulus B)/(tensile storage modulus A)] is preferably 2 or more, more preferably 4 or more . When the aforementioned ratio [(tensile storage modulus B)/(tensile storage modulus A)] is 2 or more, it is possible to further suppress the die-bonding film 3 from floating from the dicing sheet 11 in the cooling expansion process, and it is possible to The semiconductor chip 5 with the die-bonding film 3 is more suitably peeled off from the dicing sheet 11 in a pick-up process. In addition, the ratio [(tensile storage modulus B)/(tensile storage modulus A)] is preferably larger, but is, for example, 100 or less from the viewpoint of the balance between pick-up and cutting properties.

The more detailed measurement methods of the aforementioned tensile storage modulus A and the aforementioned tensile storage modulus B employ the methods described in Examples.

The adhesive used for forming the adhesive layer 2 is not particularly limited, and for example, common pressure-sensitive adhesives such as acrylic adhesives and rubber-based adhesives can be used. As the above-mentioned pressure-sensitive adhesive, from the viewpoint of cleaning and cleaning properties of electronic parts such as semiconductor wafers and glass that are afraid of contamination with ultrapure water and organic solvents such as alcohol, those using an acrylic polymer as the base polymer are preferred. Acrylic adhesive.

Examples of the aforementioned acrylic polymers include alkyl (meth)acrylates (such as methyl, ethyl, propyl, isopropyl, butyl, isobutyl, sec-butyl, tert-butyl , pentyl ester, isopentyl ester, hexyl ester, heptyl ester, octyl ester, 2-ethylhexyl ester, isooctyl ester, nonyl ester, decyl ester, isodecyl ester, undecyl ester, dodecyl ester, Tridecyl ester, tetradecyl ester, hexadecyl ester, octadecyl ester, eicosyl ester and other alkyl groups with 1 to 30 carbon atoms, especially linear chains with 4 to 18 carbon atoms or branched alkyl esters, etc.) and cycloalkyl (meth)acrylates (such as cyclopentyl ester, cyclohexyl ester, etc.) or acrylic polymers used as monomer components, etc. . In addition, (meth)acrylate means acrylate and/or methacrylate, and all (meth) in this invention have the same meaning.

For the purpose of modifying cohesion, heat resistance, etc., the aforementioned acrylic polymer may contain units corresponding to other monomer components copolymerizable with the aforementioned alkyl (meth)acrylate or cycloalkyl ester as needed. Examples of such monomer components include acrylic acid, methacrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, itaconic acid, maleic acid, fumaric acid, and crotonic acid. and other carboxyl-containing monomers; acid anhydride monomers such as maleic anhydride and itaconic anhydride; (meth)acrylate-2-hydroxyethyl, (meth)acrylate-2-hydroxypropyl, (meth)acrylate-4- Hydroxybutyl, 6-Hydroxyhexyl (meth)acrylate, 8-Hydroxyoctyl (meth)acrylate, 10-Hydroxydecyl (meth)acrylate, 12-Hydroxylauryl (meth)acrylate Hydroxyl-containing monomers such as esters, (4-hydroxymethylcyclohexyl)methyl (meth)acrylate; styrenesulfonic acid, allylsulfonic acid, 2-(meth)acrylamide-2-methylpropanesulfonate Acid, (meth)acrylamide propane sulfonic acid, (meth) sulfopropyl acrylate, (meth) acryloyloxynaphthalene sulfonic acid and other sulfonic acid monomers; 2-hydroxyethyl acryloyl phosphate, etc. Phosphate-containing monomers; acrylamide, acrylonitrile, etc. These copolymerizable monomer components can be used 1 type or 2 or more types. The amount of these copolymerizable monomers used is preferably 40% by weight or less of the total monomer components.

Furthermore, in order to crosslink the said acrylic polymer, you may contain a polyfunctional monomer etc. as a comonomer component as needed. Examples of such polyfunctional monomers include hexanediol di(meth)acrylate, (poly)ethylene glycol di(meth)acrylate, (poly)propylene glycol di(meth)acrylate , neopentyl glycol di(meth)acrylate, pentaerythritol di(meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, dipentaerythritol hexa(meth)acrylate ) acrylate, epoxy (meth)acrylate, polyester (meth)acrylate, urethane (meth)acrylate, etc. These polyfunctional monomers can also be used 1 type or 2 or more types. From the viewpoint of adhesive properties and the like, the amount of polyfunctional monomer used is preferably 30% by weight or less of the total monomer components.

The aforementioned acrylic polymer can be obtained by polymerizing a single monomer or a mixture of two or more monomers. Polymerization can also be performed by arbitrary methods such as solution polymerization, emulsion polymerization, bulk polymerization, and suspension polymerization. From the viewpoint of preventing contamination of clean adherends, etc., the content of low molecular weight substances is preferably small. From this point of view, the number average molecular weight of the acrylic polymer is preferably 300,000 or more, more preferably about 400,000 to 3 million.

In addition, in the aforementioned pressure-sensitive adhesive, in order to increase the number average molecular weight of the acrylic polymer or the like as the base polymer, an external crosslinking agent may also be appropriately used. Specific means of the external crosslinking method include a method of adding and reacting a so-called crosslinking agent such as a polyisocyanate compound, an epoxy compound, an aziridine compound, or a melamine-based crosslinking agent. When an external crosslinking agent is used, its usage amount is appropriately determined according to its balance with the base polymer to be crosslinked, and further according to its use as an adhesive. Usually, it is preferable to mix|blend about 5 weight part or less with respect to 100 weight part of said base polymers, and further 0.1-5 weight part. Furthermore, in the adhesive, in addition to the aforementioned components, conventionally known additives such as various tackifiers and anti-aging agents may be used as needed.

The adhesive layer 2 can be formed using a radiation-curable adhesive. When ultraviolet rays are irradiated in a state where the die-bonding film 3 is bonded, an anchor effect can be produced between the die-bonding film 3 and the die-bonding film 3 . Thereby, the adhesiveness of the adhesive layer 2 and the die-bonding film 3 at low temperature (for example, -15 degreeC) can be improved.

In addition, with regard to the adhesiveness based on the anchoring effect, the lower the temperature, the higher the adhesiveness. An anchoring effect is exhibited even at normal temperature (for example, 23° C.), but adhesiveness due to the anchoring effect cannot be exhibited at normal temperature as compared with a low temperature. As a result, the peeling force B can be increased suitably, and the peeling force A can be reduced.

The radiation-curable adhesive can be used without particular limitation as long as it has a radiation-curable functional group such as a carbon-carbon double bond and exhibits adhesiveness. Examples of radiation-curable adhesives include conventional pressure-sensitive adhesives such as the aforementioned acrylic adhesives and rubber-based adhesives in which radiation-curable monomer components, oligomeric adhesives, and Additive radiation-curable adhesive made of chemical ingredients.

Examples of the radiation curable monomer components to be compounded include: urethane oligomer, urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate , tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta(meth)acrylate, dipentaerythritol hexa(meth)acrylate ) acrylate, 1,4-butanediol di(meth)acrylate, etc. In addition, radiation-curable oligomer components include various oligomers such as urethanes, polyethers, polyesters, polycarbonates, and polybutadienes, the molecular weight of which is 100 to 100. A range of around 30,000 is appropriate. The compounding quantity of a radiation-curable monomer component and an oligomer component can suitably determine the quantity which can reduce the adhesive force of an adhesive layer according to the kind of said adhesive layer. Usually, it is 5-500 weight part with respect to 100 weight part of base polymers, such as an acrylic polymer which comprises an adhesive, Preferably it is about 40-150 weight part.

In addition, as radiation-curable adhesives, in addition to the above-described additive type radiation-curable adhesives, there are also examples that use carbon- A polymer with carbon double bonds as the base polymer for intrinsic radiation-curable adhesives. Intrinsic radiation-curable adhesives do not need to contain or do not contain many oligomer components, etc. A stable adhesive layer is therefore preferred.

As the aforementioned base polymer having a carbon-carbon double bond, a polymer having a carbon-carbon double bond and having adhesive properties can be used without particular limitation. As such a base polymer, a polymer having an acrylic polymer as a basic skeleton is preferable. Examples of the basic skeleton of the acrylic polymer include the acrylic polymers exemplified above.

The method for introducing a carbon-carbon double bond into the acrylic polymer is not particularly limited, and various methods can be employed. The introduction of a carbon-carbon double bond into a polymer side chain is easy in terms of molecular design. For example, the method of copolymerizing an acrylic polymer with a monomer having a functional group, and then making a compound having a functional group capable of reacting with the functional group and a carbon-carbon double bond while maintaining the radiation curability of the carbon-carbon double bond Condensation or addition reaction in the state.

Examples of combinations of these functional groups include a carboxylic acid group and an epoxy group, a carboxylic acid group and an aziridinyl group, a hydroxyl group and an isocyanate group, and the like. Among the combinations of these functional groups, a combination of a hydroxyl group and an isocyanate group is suitable from the viewpoint of the ease of following the reaction. In addition, as long as the above-mentioned acrylic polymer having a carbon-carbon double bond is produced by combining these functional groups, the functional group may be located on either side of the acrylic polymer and the above-mentioned compound, but in the above-mentioned preferred combination Among them, the case where the acrylic polymer has a hydroxyl group and the aforementioned compound has an isocyanate group is suitable. In this case, examples of the isocyanate compound having a carbon-carbon double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, m-isopropenyl-α,α-dimethylbenzyl base isocyanate, etc. In addition, as the acrylic polymer, ether compounds including the above-exemplified hydroxyl-containing monomers, 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, and diethylene glycol monovinyl ether can be used. Copolymerized polymers.

The above-mentioned intrinsic radiation-curable adhesive may use the above-mentioned base polymer having a carbon-carbon double bond (especially an acrylic polymer) alone, or may mix the above-mentioned radiation-curable adhesive to such an extent that the characteristics do not deteriorate. Sexual monomer components, oligomer components. The radiation-curable oligomer component and the like are usually within the range of 30 parts by weight, preferably within the range of 0 to 10 parts by weight, based on 100 parts by weight of the base polymer.

The aforementioned radiation-curable adhesive contains a photopolymerization initiator when it is cured by ultraviolet rays or the like. Examples of photopolymerization initiators include 4-(2-hydroxyethoxy)phenyl(2-hydroxy-2-propyl)ketone, α-hydroxy-α,α'-dimethylacetophenone , 2-methyl-2-hydroxypropiophenone, 1-hydroxycyclohexyl phenyl ketone and other α-ketol compounds; methoxyacetophenone, 2,2-dimethoxy-2-phenylphenone Ketones, 2,2-diethoxyacetophenone, 2-methyl-1-[4-(methylthio)-phenyl]-2-morpholinopropan-1-one and other acetophenone compounds ; Benzoin ether compounds such as benzoin ethyl ether, benzoin isopropyl ether, anisoin methyl ether; ketal compounds such as benzil dimethyl ketal; 2-naphthalenesulfonyl chloride, etc. Aromatic sulfonyl chloride compounds; photoactive oxime compounds such as 1-phenyl-1,1-propanedione-2-(o-ethoxycarbonyl) oxime; benzophenone, benzoylbenzoic acid, 3 ,3'-Dimethyl-4-methoxybenzophenone and other benzophenone compounds; thioxanthone, 2-chlorothioxanthone, 2-methylthioxanthene copper, 2,4-di Methyl thioxanthone, isopropyl thioxanthone, 2,4-dichlorothioxanthone, 2,4-diethyl thioxanthone, 2,4-diisopropyl thioxanthone and other thioxanthones Compounds; camphorquinone; halogenated ketone; acyl phosphine oxide; acyl phosphonate, etc. The compounding quantity of a photoinitiator is about 0.05-20 weight part with respect to 100 weight part of base polymers, such as an acrylic polymer which comprises an adhesive, for example.

In addition, examples of radiation-curable adhesives include an addition polymerizable compound having two or more unsaturated bonds, an alkylene compound having an epoxy group disclosed in JP-A No. 60-196956, Rubber adhesives, acrylic adhesives, etc., of photopolymerizable compounds such as oxysilanes and photopolymerization initiators such as carbonyl compounds, organosulfur compounds, peroxides, amines, and onium salt compounds.

The thickness of the adhesive layer 2 is not particularly limited, but it is preferably about 1 to 50 μm, more preferably 2 to 30 μm, and even more preferably 5 to 30 μm from the viewpoint of preventing chipping on the cut surface and compatibility of fixing and holding the die-bonding film 3 . 25 μm.

The die-bonding film 3 of the aforementioned diced die-bonding film 10 is preferably protected by a separator (not shown). The separator has a function as a protective material that protects the die-bonding film 3 until it is put into practical use. In addition, the separator can also be used as a support base material when the die-bonding film 3 is transferred to the adhesive layer 2 . The separator film is peeled off when the workpiece is attached to the die-bonding film 3 of the dicing die-bonding film. As the separator, one coated with a release agent such as polyethylene terephthalate (PET), polyethylene, polypropylene, fluorine-based release agent, or long-chain alkyl acrylate release agent can also be used. Plastic film, paper, etc.

The dicing die-bonding film 10 of this embodiment can be produced as follows, for example.

First, the substrate 1 can be formed into a film by a conventionally known film forming method. As the film forming method, for example, a calender film forming method, a casting method in an organic solvent, an inflation extrusion method in a closed system, a T-die extrusion method, a co-extrusion method, and a dry lamination method are exemplified. Wait.

Next, after coating the adhesive composition solution on the substrate 1 to form a coating film, the coating film is dried under predetermined conditions (heating and crosslinking as necessary) to form a precursor layer. It does not specifically limit as a coating method, For example, roll coating, screen printing coating, gravure coating etc. are mentioned. Moreover, as drying conditions, it carries out in the range of 80-150 degreeC of drying temperature, and 0.5-5 minutes of drying time, for example. Alternatively, after coating the adhesive composition on the separator to form a coating film, the coating film may be dried under the aforementioned drying conditions to form the aforementioned precursor layer. After that, the aforementioned precursor layer is bonded on the substrate 1 together with the separator. Thus, a dicing sheet precursor was produced.

The die-bonding film 3 can be produced, for example, as follows.

First, an adhesive composition solution as a material for forming the die-bonding film 3 is produced. In this adhesive composition solution, as described above, the aforementioned adhesive composition, filler, other various additives, and the like are compounded.

Next, the adhesive composition solution is coated on the base separator so as to have a predetermined thickness to form a coating film, and the coating film is dried under predetermined conditions to form the die-bonding film 3 . Although it does not specifically limit as a coating method, For example, roll coating, screen printing coating, gravure coating etc. are mentioned. Moreover, as drying conditions, it carries out in the range of drying temperature 70-160 degreeC, and drying time 1-5 minutes, for example. Alternatively, the die-bonding film 3 may be formed by coating the adhesive composition solution on the separator to form a coating film, and then drying the coating film under the aforementioned drying conditions. Thereafter, the die-bonding film 3 is bonded together with the separator to the base separator.

Next, the separator is peeled off from the dicing sheet precursor and the die-bonding film 3 , respectively, and both are bonded so that the die-bonding film 3 and the adhesive layer become bonding surfaces. Bonding can be performed, for example, by crimping. At this time, the lamination temperature is not particularly limited, but is, for example, preferably 30 to 50°C, more preferably 35 to 45°C. In addition, the linear pressure is not particularly limited, but is preferably 0.1 to 20 kgf/cm, more preferably 1 to 10 kgf/cm, for example. Thereafter, ultraviolet rays may be irradiated from the substrate 1 side. It is preferable that it is the quantity which makes the said peeling force A and the said peeling force B into the said numerical range as irradiation dose of an ultraviolet-ray. The specific amount of irradiation of ultraviolet rays varies depending on the composition, thickness, etc. of the pressure-sensitive adhesive layer, and is, for example, preferably 50 mJ to 500 mJ, more preferably 100 mJ to 300 mJ. Thereby, the dicing die-bonding film of this embodiment can be obtained.

(Manufacturing method of semiconductor device)

Next, a method of manufacturing a semiconductor device using the dicing die-bonding film 10 will be described with reference to FIGS. 2 to 7 . 2 to 5 are schematic cross-sectional views for explaining one method of manufacturing the semiconductor device according to this embodiment. First, laser light is irradiated on the pre-segmentation lines 4L of the semiconductor wafer 4 to form modified regions on the pre-segmentation lines 4L. This method is a method in which laser beams are irradiated along grid-like pre-segmentation lines by directing a focused spot to the inside of a semiconductor wafer, and a modified region is formed inside the semiconductor wafer by ablation by multiphoton absorption. What is necessary is just to adjust suitably within the range of the following conditions as laser irradiation conditions.

＜Laser irradiation conditions＞

(A) Laser

(B) Focusing lens

Magnification 100 times or less

NA 0.55

Transmittance of laser wavelength below 100%

(C) The moving speed of the stage on which the semiconductor substrate is placed is 280mm/sec or less

It should be noted that the method of forming the reformed region on the pre-separation line 4L by irradiating laser light has been described in detail in Japanese Patent No. 3408805 and Japanese Patent Laid-Open No. 2003-338567, so details here are omitted. illustrate.

Next, as shown in FIG. 3 , the semiconductor wafer 4 after the reformed region is formed is pressure-bonded on the die-bonding film 3 , and held and fixed by adhesion (fixing step). This step is performed while being pressed by pressing means such as a pressure contact roller. The sticking temperature at the time of mounting is not particularly limited, but is preferably in the range of 40 to 80°C. This is because warpage of the semiconductor wafer 4 can be effectively prevented and the influence of expansion and contraction of the dicing die-bonding film can be reduced.

Next, by applying tensile tension to the dicing die-bonding film 10 , the semiconductor wafer 4 and the die-bonding film 3 are broken at the pre-separation line 4L, thereby forming the semiconductor chip 5 (cooling expansion step). In this step, for example, a commercially available wafer extension device can be used. Specifically, as shown in FIG. 4( a ), the dicing ring 31 is attached to the peripheral portion of the adhesive layer 2 of the dicing die-bonding film 10 on which the semiconductor wafer 4 is bonded, and then fixed to the wafer expansion device 32. . Next, as shown in FIG. 4( b ), the push-up portion 33 is raised to apply tension to the dicing die-bonding film 12 .

The aforementioned cooling expansion step is preferably carried out at a temperature of 0 to -15°C, more preferably at a temperature of -5 to -15°C. Since the said cooling expansion process is performed on the condition of 0-15 degreeC, the die-bonding film 3 can be broken suitably.

In addition, in the above-mentioned cooling expansion step, the expansion speed (speed at which the raised portion rises) is preferably 100 to 400 mm/sec, more preferably 100 to 350 mm/sec, and even more preferably 100 to 300 mm/sec. When the spreading speed is set to be 100 mm/sec or more, the semiconductor wafer 4 and the die-bonding film 3 can be easily broken substantially simultaneously. In addition, if the spreading speed is set to 400 mm/sec or less, it is possible to prevent the dicing sheet 11 from breaking.

In addition, in the cooling expansion step, the expansion amount is preferably 4 to 16 mm. The aforementioned extension amount can be appropriately adjusted within the aforementioned numerical range according to the size of the chip to be formed. If the amount of expansion is set to be 4 mm or more, the breakage of the semiconductor wafer 4 and the die-bonding film 3 can be made easier. In addition, if the amount of expansion is made 16 mm or less, it is possible to further prevent the dicing sheet 11 from breaking.

In this way, by applying tensile tension to the dicing die-bonding film 10, cracks can be generated in the thickness direction of the semiconductor wafer 4 starting from the reformed region of the semiconductor wafer 4, and at the same time, it is possible to make the semiconductor wafer 4 tightly bonded. The die-bonding film 3 is broken, and the semiconductor chip 5 with the die-bonding film 3 can be obtained.

Next, a heating expansion step is performed as necessary. In the heat expansion step, the portion of the dicing sheet 11 outside the portion to which the semiconductor wafer 4 is attached is heated to be thermally shrunk. Accordingly, the distance between the semiconductor chips 5 is increased. The conditions in the heat expansion step are not particularly limited, but are preferably within the range of: expansion amount 4-16mm, heating temperature 200-260°C, heating distance 2-30mm, rotation speed 3°/sec-10°/sec.

Next, a cleaning step is performed as necessary. In the cleaning process, the dicing sheet 11 in the state where the semiconductor chip 5 with the die-bonding film 3 is fixed is set on a spin coater. Next, the spin coater was rotated while dripping the cleaning liquid onto the semiconductor chip 5 . Thereby, the surface of the semiconductor chip 5 is cleaned. As a cleaning liquid, water is mentioned, for example. The spin coater's spin speed and spin time vary depending on the type of cleaning liquid and the like. For example, the spin coater can be set at a spin speed of 400 to 3000 rpm and a spin time of 1 to 5 minutes.

Next, in order to peel off the semiconductor chip 5 adhered and fixed on the dicing die-bonding film 10, the semiconductor chip 5 is picked up (pick-up process). The method of picking up is not particularly limited, and various conventionally known methods can be employed. For example, there may be mentioned a method in which each semiconductor chip 5 is lifted up from the side of the dicing die-bonding film 10 with a needle, and the lifted semiconductor chip 5 is picked up by a pick-up device.

Next, as shown in FIG. 5 , the picked-up semiconductor chip 5 is die-bonded to the adherend 6 via the die-bonding film 3 (temporary fixing step). As the to-be-adhered body 6, a lead frame, a TAB film, a board|substrate, or the semiconductor chip produced separately etc. are mentioned. The adherend 6 may be, for example, a deformable adherend that is easily deformed, or a non-deformable adherend (such as a semiconductor wafer) that is difficult to deform.

As the aforementioned substrate, conventionally known substrates can be used. In addition, as the lead frame, metal lead frames such as Cu lead frames and 42 alloy lead frames, organic substrates made of glass epoxy resin, BT (bismaleimide-triazine), polyimide, etc. can be used. . However, the present invention is not limited thereto, and includes a circuit board that can be used by bonding and fixing a semiconductor element and electrically connecting the semiconductor element.

The shear adhesive force at 25° C. with respect to the adherend 6 at the time of temporarily fixing the die-bonding film 3 is preferably 0.2 MPa or more, and more preferably 0.2 to 10 MPa. When the shear adhesive force of the die-bonding film 3 is at least 0.2 MPa or more, during the wire bonding process, due to the ultrasonic vibration and heating in this process, the bonding force between the die-bonding film 3 and the semiconductor chip 5 or the adherend 6 will be reduced. There is little shear deformation at the interface. That is, the semiconductor element is less likely to move due to ultrasonic vibration during wire bonding, thereby preventing a decrease in the success rate of wire bonding. In addition, the shear adhesive force at 175° C. with respect to the adherend 6 at the time of temporarily fixing the die-bonding film 3 is preferably 0.01 MPa or more, and more preferably 0.01 to 5 MPa.

Next, wire bonding is performed to electrically connect the tip of the terminal portion (inner lead) of the adherend 6 to an electrode pad (not shown) on the semiconductor chip 5 with the bonding wire 7 (wire bonding step). As the bonding wire 7 , for example, a gold wire, an aluminum wire, a copper wire, or the like can be used. The temperature at the time of performing wire bonding can be performed in the range of 80-250 degreeC, Preferably it is 80-220 degreeC. In addition, the heating time is several seconds to several minutes. The wire connection can be performed by combining vibration energy by ultrasonic waves and crimping energy by applying pressure in a state of being heated to the aforementioned temperature range. This step may be performed without thermal curing of the die-bonding film 3 . In addition, during this process, the semiconductor chip 5 and the adherend 6 are not fixed together due to the die-bonding film 3 .

Next, the semiconductor chip 5 is encapsulated with the encapsulation resin 8 (encapsulation process). This step is performed to protect the semiconductor chip 5 and the bonding wire 7 mounted on the adherend 6 . This step can be performed by molding the sealing resin with a mold. As the sealing resin 8 , for example, an epoxy-based resin is used. The heating temperature during resin encapsulation is usually at 175° C. for 60 to 90 seconds, but the present invention is not limited thereto. For example, it may be cured at 165 to 185° C. for several minutes. As a result, the sealing resin is cured, and the semiconductor chip 5 and the adherend 6 are fixed with the die-bonding film 3 interposed therebetween. That is, in the present invention, even if the post-curing step described later is not performed, the die-bonding film 3 can be used for fixing in this step, which can contribute to reducing the number of manufacturing steps and shortening the manufacturing cycle of semiconductor devices.

In the aforementioned post-curing step, the encapsulating resin 8 that has not been sufficiently cured in the aforementioned encapsulating step is completely cured. Even when the die-bonding film 3 is not completely thermally cured in the encapsulating process, in this process, the die-bonding film 3 can be completely thermally cured together with the encapsulating resin 8 . The heating temperature in this step varies depending on the type of sealing resin, for example, it is in the range of 165 to 185° C., and the heating time is about 0.5 to 8 hours.

In the above-mentioned embodiment, the case where the wire bonding process is performed after the semiconductor chip 5 with the die-bonding film 3 is temporarily fixed to the adherend 6 without completely thermosetting the die-bonding film 3 has been described. However, in the present invention, it is also possible to perform a normal die bonding process, that is, after temporarily fixing the semiconductor chip 5 with the die-bonding film 3 on the adherend 6, thermally curing the die-bonding film 3, and then performing wire bonding. combined process.

In addition, the dicing die-bonding film of this invention can be used suitably also when laminating|stacking and three-dimensionally mounting a some semiconductor chip. At this time, the die-bonding film and the spacer may be laminated between the semiconductor chips, or only the die-bonding film without the spacer may be laminated between the semiconductor chips, and may be appropriately changed according to manufacturing conditions, applications, and the like.

Next, a method of manufacturing a semiconductor device using a step of forming grooves on the surface of a semiconductor wafer and then performing back grinding will be described below.

6 and 7 are schematic cross-sectional views illustrating another method of manufacturing the semiconductor device of this embodiment. First, as shown in FIG. 6( a ), grooves 4S that do not reach the rear surface 4R are formed on the front surface 4F of the semiconductor wafer 4 by the rotary blade 41 . It should be noted that, when the groove 4S is formed, the semiconductor wafer 4 is supported by an unillustrated support base material. The depth of the groove 4S can be appropriately set according to the thickness of the semiconductor wafer 4 and the expansion conditions. Next, as shown in FIG. 6( b ), the semiconductor wafer 4 is supported by the protective base material 42 so that the surface 4F abuts on it. Thereafter, the back surface is ground with the grinding stone 45 to make the groove 4S appear from the back surface 4R. It should be noted that a conventionally known bonding device can be used for the attachment of the protective base material 42 to the semiconductor wafer, and a conventionally known grinding device can also be used for the back grinding.

Next, as shown in FIG. 7 , the semiconductor wafer 4 showing the groove 4S is pressure-bonded to the dicing die-bonding film 10 , held and fixed by adhesion (temporary fixing step). Thereafter, the protective substrate 42 is peeled off, and tension is applied to the dicing die-bonding film 10 by the wafer expanding device 32 . Thereby, the die-bonding film 3 is broken, and the semiconductor chip 5 is formed (chip formation process). It should be noted that the temperature, spreading speed, and spreading amount in the chip forming step are the same as those in the case of forming the reformed region on the pre-segmentation line 4L by irradiating laser light. Subsequent steps are the same as those in the case of forming the reformed region on the pre-segmentation line 4L by irradiating laser light, and thus the description here is omitted.

The method of manufacturing a semiconductor device according to the present invention is not limited to the above-mentioned embodiment as long as the semiconductor wafer and the die-bonding film are simultaneously fractured in the cooling-expanding step, or only the die-bonding film is fractured in the cooling-expanding step. As another embodiment, for example, as shown in FIG. 6( a ), after forming grooves 4S that do not reach the back surface 4R on the front surface 4F of the semiconductor wafer 4 with a rotary blade 41 , the grooves 4S appear by crimping on the dicing die bonding film. The semiconductor wafer 4 is bonded and held and fixed (temporary fixing process). After that, tension is applied to the dicing die-bonding film by a wafer expanding device. Thereby, the semiconductor wafer 4 and the die-bonding film 3 can be broken at the portion of the groove 4S to form the semiconductor chip 5 .

Example

Hereinafter, the present invention will be described in detail using examples, but the present invention is not limited to the following examples unless the gist is exceeded. In addition, in each example, unless otherwise indicated, a part means a weight basis.

(Example 1)

＜Manufacturing of cut sheets＞

100 parts of 2-ethylhexyl acrylate (hereinafter also referred to as "2EHA"), 2-hydroxyethyl acrylate (hereinafter also referred to as 19 parts called "HEA"), 0.4 parts of benzoyl peroxide, and 80 parts of toluene were subjected to polymerization treatment at 60° C. for 10 hours in a nitrogen stream to obtain an acrylic polymer A.

Add 1.2 parts of 2-methacryloyloxyethyl isocyanate (hereinafter also referred to as "MOI") to this acrylic polymer A, and perform addition reaction treatment at 50°C for 60 hours in an air stream to obtain acrylic polymer A. Polymer A'.

Next, 1.3 parts of a polyisocyanate compound (trade name "CORONATEL", manufactured by Nippon Polyurethane Co., Ltd.) and a photopolymerization initiator (trade name "IRGACURE 184", manufactured by Ciba Specialty Chemicals Inc.) were added to 100 parts of the acrylic polymer A'. 3 parts) to prepare a binder solution (also referred to as "binder solution A").

The adhesive solution A prepared above was coated on the silicone-treated surface of the PET release liner, and heated and dried at 120° C. for 2 minutes to form an adhesive layer A with a thickness of 10 μm. Next, an EVA film (ethylene-vinyl acetate copolymer film) manufactured by GUNZE LIMITED with a thickness of 115 μm was bonded to the exposed surface of the adhesive layer A, and stored at 23° C. for 72 hours to obtain a dicing sheet A.

＜Production of die-bonding film＞

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution A having a solid content concentration of 20% by weight.

(a) Acrylic resin (trade name "SG-708-6" manufactured by Nagase ChemteX Corporation, glass transition temperature (Tg): 4°C): 100 parts

(b) Epoxy resin (trade name "JER828" manufactured by Mitsubishi Chemical Corporation, liquid at 23°C): 11 parts

(c) Phenolic resin (trade name "MEH-7851ss" manufactured by Meiwa Kasei Co., Ltd., solid at 23° C.): 5 parts

(d) Spherical silica (trade name "SO-25R" manufactured by Admatechs Co., Ltd.): 110 parts

The adhesive composition solution A is coated on a release-treated film (release liner) formed of a polyethylene terephthalate film with a thickness of 50 μm that has been subjected to a silicone release treatment, and then at 130 °C for 2 minutes. Thus, a die-bonding film A having a thickness (average thickness) of 10 μm was produced.

＜Production of dicing die-bonding film＞

The PET release liner was peeled off from the dicing sheet A, and the die-bonding film A was bonded to the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Next, 300 mJ of ultraviolet rays were irradiated from the dicing sheet side. Thereby, the dicing die-bonding film A was obtained.

(Example 2)

＜Production of die-bonding film＞

The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution B having a solid content concentration of 20% by weight.

(a) Acrylic resin (trade name "SG-708-6" manufactured by Nagase ChemteX Corporation, glass transition temperature (Tg): 4°C): 100 parts

(b) Epoxy resin (trade name "JER1010", manufactured by Mitsubishi Chemical Corporation, solid at 23° C.): 140 parts

(c) Epoxy resin (trade name "JER828" manufactured by Mitsubishi Chemical Corporation, liquid at 23°C): 60 parts

(d) Phenolic resin (trade name "MEH-7851ss" manufactured by Meiwa Kasei Co., Ltd., solid at 23°C): 100 parts

(e) Spherical silica (trade name "SO-25R" manufactured by Admatechs Co., Ltd.): 40 parts

The adhesive composition solution B is coated on a release-treated film (release liner) formed of a polyethylene terephthalate film with a thickness of 50 μm that has been subjected to a silicone release treatment, and then at 130 °C for 2 minutes. Thus, a die-bonding film B having a thickness (average thickness) of 10 μm was produced.

＜Production of dicing die-bonding film＞

The same dicing sheet as the dicing sheet A used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film B was bonded on the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Next, 300 mJ of ultraviolet rays were irradiated from the dicing sheet side. Thereby, the dicing die-bonding film B was obtained.

(Example 3)

＜Production of die-bonding film＞

The following (a) to (e) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution C having a solid content concentration of 20% by weight.

(a) Acrylic resin (trade name "SG-70L" manufactured by Nagase ChemteX Corporation, glass transition temperature (Tg): -13°C): 100 parts

(b) Epoxy resin (trade name "JER1010", manufactured by Mitsubishi Chemical Corporation, solid at 23° C.): 140 parts

(c) Epoxy resin (trade name "JER828", manufactured by Mitsubishi Chemical Corporation, liquid at 23°C): 60 parts

(d) 100 parts of phenolic resin (trade name "MEH-7851ss" manufactured by Meiwa Chemical Industry Co., Ltd., solid at 23° C.)

(e) Spherical silica (trade name "SO-25R" manufactured by Admatechs Co., Ltd.): 100 parts

The adhesive composition solution C is coated on a release-treated film (release liner) formed of a polyethylene terephthalate film with a thickness of 50 μm that has been subjected to a silicone release treatment, and then at 130 °C for 2 minutes. Thus, a die-bonding film C having a thickness (average thickness) of 10 μm was obtained.

＜Production of dicing die-bonding film＞

The same dicing sheet as the dicing sheet A used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film C was bonded to the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Next, 300 mJ of ultraviolet rays were irradiated from the dicing sheet side. Thereby, the dicing die-bonding film C was obtained.

(Example 4)

＜Production of dicing die-bonding film＞

The same dicing sheet as the dicing sheet A used in Example 1 was prepared. In addition, the same bonding film as the die-bonding film A used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film A was bonded to the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Next, 40 mJ of ultraviolet rays were irradiated from the dicing sheet side. Thereby, the dicing die-bonding film D was obtained.

(Example 5)

＜Production of dicing die-bonding film＞

The same dicing sheet as the dicing sheet A used in Example 1 was prepared. In addition, the same bonding film as the die-bonding film A used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film A was bonded to the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Next, 80 mJ of ultraviolet rays were irradiated from the dicing sheet side. Thereby, the dicing die-bonding film E was obtained.

(Example 6)

＜Manufacturing of cut sheets＞

The adhesive solution A prepared in the same manner as in Example 1 was applied to the silicone-treated surface of a PET release liner, and heated and dried at 120° C. for 2 minutes to form an adhesive layer A with a thickness of 10 μm. Next, a polyvinyl chloride film (manufactured by Achilles, product name: V-9KN) with a thickness of 100 μm was bonded to the exposed surface of the adhesive layer A, and stored at 23° C. for 72 hours to obtain a diced sheet C.

＜Production of dicing die-bonding film＞

The same bonding film A as the die-bonding film A used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet C, and the die-bonding film A was bonded to the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Next, 300 mJ of ultraviolet rays were irradiated from the dicing sheet side. Thus, the diced die-bonding film I was obtained.

(comparative example 1)

＜Manufacturing of cut sheets＞

The adhesive solution A prepared in the same manner as in Example 1 was applied to the silicone-treated surface of a PET release liner, and heated and dried at 120° C. for 2 minutes to form an adhesive layer A with a thickness of 10 μm. Next, an EVA film (ethylene-vinyl acetate copolymer film) with a thickness of 115 μm manufactured by GUNZE LIMITED was bonded to the exposed surface of the adhesive layer A, and stored at 23° C. for 72 hours.

Then, 300 mJ of ultraviolet rays were irradiated from the EVA film side (substrate side). Thus, the diced sheet B was obtained.

＜Production of dicing die-bonding film＞

The same die-bonding film as the die-bonding film B used in Example 2 was prepared. The PET release liner was peeled off from the dicing sheet B, and the die-bonding film B was bonded on the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Thereby, the dicing die-bonding film F was obtained.

(comparative example 2)

＜Production of die-bonding film＞

The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution D having a solid content concentration of 20% by weight.

(a) Acrylic resin (trade name "SG-70L" manufactured by Nagase ChemteX Corporation): 100 parts

(b) Epoxy resin (trade name "JER828" manufactured by Mitsubishi Chemical Corporation): 200 parts

(c) phenolic resin (trade name "MEH-7851ss" manufactured by Meiwa Chemical Industry Co., Ltd.) 100 parts

(d) Spherical silica (trade name "SO-25R" manufactured by Admatechs Co., Ltd.): 100 parts

The adhesive composition solution D was coated on a release-treated film (release liner) formed of a polyethylene terephthalate film with a thickness of 50 μm that had undergone a silicone release treatment, and then heated at 130° C. Let dry for 2 minutes. Thus, a die-bonding film D having a thickness (average thickness) of 10 μm was obtained.

＜Production of dicing die-bonding film＞

The same dicing sheet as the dicing sheet A used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film D was bonded on the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Next, 300 mJ of ultraviolet rays were irradiated from the dicing sheet side. Thereby, the dicing die-bonding film G was obtained.

(comparative example 3)

＜Production of dicing die-bonding film＞

The same dicing sheet as the dicing sheet A used in Example 1 was prepared. In addition, the same die-bonding film as the die-bonding film A used in Example 1 was prepared. Next, the PET release liner was peeled off from the dicing sheet A, and the die-bonding film A was bonded to the exposed pressure-sensitive adhesive layer. Apply with a hand roller. Thereby, the dicing die-bonding film H was obtained.

(Measurement of peel force between dicing sheet and die-bonding film)

The die-bonding film was peeled off from the dicing die-bonding film of Examples and Comparative Examples to expose the die-bonding film. Then, a liner tape (BT315, manufactured by Nitto Denko) having a width of 50 mm was bonded to the exposed die-bonding film. The dicing die-bonding film was cut along a width of 50 mm of the liner tape, and the peeling force between the dicing sheet and the die-bonding film (die-bonding film bonded with the liner tape) was measured at a width of 50 mm. Let the peeling force in measurement temperature 23 degreeC be peeling force A, and let the peeling force in measurement temperature -15 degreeC be peeling force B. The measurement conditions of the peeling force A and the peeling force B are as follows. The results are shown in Table 1.

<Measurement conditions of peel force A>

T-peel test

Peeling speed 300mm/min

Measuring device: AG-20KNSD manufactured by SHIMADZU Co., Ltd.

<Measurement conditions of peel force B>

T-peel test

Set the sample at -15°C and measure it after 2 minutes

The peeling speed is 300 mm/min.

Measuring device: Shimadzu Co., Ltd., triple tensile testing machine with constant temperature and humidity chamber

[Measurement of tensile storage modulus at -15°C, tensile storage modulus at 23°C, and glass transition temperature of die-bonding film]

The die-bonding films of Examples and Comparative Examples were overlaid until the thickness became 200 μm. Next, a short strip having a length of 40 mm (measurement length) and a width of 10 mm was cut out with a cutter. Next, the tensile storage modulus at -50 to 100° C. was measured using a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric Scientific Ltd.). The measurement conditions were set at a frequency of 1 Hz, a temperature increase rate of 10° C./minute, and a distance between chucks of 22.5 mm. The values at -15°C and 23°C at this time were read and used as measured values of the tensile storage modulus. The tensile storage modulus at a measurement temperature of 23° C. is defined as a tensile storage modulus A, and the tensile storage modulus at a measurement temperature of −15° C. is defined as a tensile storage modulus B. The results are shown in Table 1. In addition, the ratio of the tensile storage modulus A to the tensile storage modulus B [(tensile storage modulus B)/(tensile storage modulus A)] is also shown in Table 1 together. Further, the glass transition temperature (Tg) was obtained by calculating the value of tan δ (E" (loss elastic modulus)/E' (storage modulus)). The results are shown in Table 1.

[Measurement of Tensile Storage Modulus of Adhesive Layer at -15°C and Tensile Storage Modulus at 23°C]

The adhesive layers of Examples and Comparative Examples were superimposed until the thickness became 200 μm. Next, a short strip having a length of 40 mm (measurement length) and a width of 10 mm was cut out with a cutter. Next, the tensile storage modulus at -50 to 100° C. was measured using a solid viscoelasticity measuring device (RSAIII, manufactured by Rheometric Scientific Ltd.). The measurement conditions were set at a frequency of 1 Hz, a temperature increase rate of 10° C./minute, and a distance between chucks of 22.5 mm. The values at -15°C and 23°C at this time were read and used as measured values of the tensile storage modulus. The tensile storage modulus at a measurement temperature of 23° C. is defined as a tensile storage modulus A, and the tensile storage modulus at a measurement temperature of −15° C. is defined as a tensile storage modulus B. The results are shown in Table 1. In addition, the ratio of the tensile storage modulus A to the tensile storage modulus B [(tensile storage modulus B)/(tensile storage modulus A)] is also shown in Table 1 together.

[Measurement of the tensile strength at -15°C of the base material and 100% elongation]

The base materials of the examples and the comparative examples were each cut to a width of 10 mm. Next, with respect to this sample, the tensile strength when 100% stretching was obtained at -15°C, the distance between the chucks was 10 mm, and the tensile speed was 100 mm/min was obtained using a tensile testing machine (Tensilon, manufactured by Shimadzu Corporation). strength. The measurement was performed 2 minutes after the sample was set in an environment of -15°C. The results are shown in Table 1.

(extended evaluation)

Using ML300-Integration of Tokyo Seiki Co., Ltd. as a laser processing device, aim the spotlight at the inside of a 12-inch semiconductor wafer, and irradiate laser light along the grid-like (10mm×10mm) pre-segmentation lines to irradiate the semiconductor wafer. The interior forms a modified region. Laser irradiation conditions were performed as follows.

(A) Laser

(B) Focusing lens

Magnification 50 times

NA 0.55

Transmittance to laser wavelength 60%

(C) The moving speed of the stage on which the semiconductor substrate is placed is 100mm/sec

Next, a protective tape for back grinding was attached to the surface of the semiconductor wafer, and the back surface was ground so that the thickness of the semiconductor wafer became 30 μm using Backgrinder DGP8760 manufactured by DISCO Corporation.

Next, the aforementioned semiconductor wafer and dicing ring subjected to pretreatment by laser were bonded to the dicing die-bonding films of Examples and Comparative Examples.

Next, by using Die Separator DDS2300 manufactured by DISCO Corporation, cutting of the semiconductor wafer and thermal shrinkage of the diced pieces were performed to obtain samples. Specifically, first, the semiconductor wafer was diced using a cooling expansion unit under conditions of an expansion temperature of −15° C., an expansion speed of 200 mm/sec, and an expansion amount of 12 mm.

Then, the cutting sheet is thermally shrunk with the heating expansion unit under the conditions of expansion amount 10mm, heating temperature 250°C, air volume 40L/min, heating distance 20mm, and rotation speed 3°/sec.

The area of the portion where the die-bonding film floated from the dicing sheet was observed with a microscope (the ratio of the area of the die-bonding film that floated when the area of the entire die-bonding film was 100%). The case where the floating area was less than 30% was made into (circle), and the case of 30% or more was made into x, and it evaluated. The results are shown in Table 1.

(Evaluation of chip scattering caused by cleaning)

Using the sample after the extended evaluation, evaluation of chip scattering due to cleaning was performed. Specifically, first, the dicing sheet in the state where the semiconductor chip with the die-bonding film was fixed was set on a spin coater. Next, the spin coater was rotated while dripping water as a cleaning solution onto the semiconductor chip. Thus, the surface of the semiconductor chip is cleaned. The rotation speed of the spin coater was 2500 rpm, and the rotation time was 1 minute. Thereafter, drying was performed at 800 rpm for 1 minute. Check whether the chip is flying or not. The case where all the chips remained was evaluated as ◯, and the case where even one chip disappeared was evaluated as ×. The results are shown in Table 1.

(pick up evaluation)

Pick-up evaluation was performed using a sample after evaluation of chip scattering by cleaning. Specifically, it picked up under the following conditions using Diebonder SPA-300 (manufactured by Shinkawa Corporation). The cases where all the chips could be picked up were made ◯, and even if there was one chip that could not be picked up, it was evaluated as x. The results are shown in Table 1.

＜Pickup conditions＞

Number of pins: 5

Pick up height: 500μm

Number of pick-up evaluations: 50 chips

[Table 1]

Claims (2)

1. A dicing chip bonding film, characterized in that it has: cutting pieces; and a die-bonding film laminated on the dicing sheet, The peel force A at 23° C. of the dicing sheet and the die-bonding film is in the range of 0.1 N/20 mm or more and 0.25 N/20 mm or less under the following peel force A measurement conditions, The peeling force B at -15°C of the dicing sheet and the die-bonding film is in the range of 0.15 N/20 mm or more and 0.5 N/20 mm or less under the following peeling force B measurement conditions, The die-bonding film is used by breaking it by applying tensile tension, <Measurement conditions of peel force A> T-peel test Peeling speed 300mm/min <Measurement conditions of peel force B> T-peel test The peeling speed is 300 mm/min. 2. A method for manufacturing a semiconductor device, comprising the steps of: Process A, laminating the semiconductor wafer on the dicing die bonding film; Step B, expanding the dicing die-bonding film at a temperature below 0°C to at least break the die-bonding film to obtain a chip with the die-bonding film; and Step C, picking up the chip with the die-bonding film, The dicing die-bonding film has: cutting pieces; and a die-bonding film laminated on the dicing sheet, The peel force A at 23° C. of the dicing sheet and the die-bonding film is in the range of 0.1 N/20 mm or more and 0.25 N/20 mm or less under the following peel force A measurement conditions, The peeling force B at -15°C of the dicing sheet and the die-bonding film is in the range of 0.15 N/20 mm or more and 0.5 N/20 mm or less under the following peeling force B measurement conditions, <Measurement conditions of peel force A> T-peel test Peeling speed 300mm/min <Measurement conditions of peel force B> T-peel test The peeling speed is 300 mm/min.