CN107342759B - Digital intelligent IGBT driving method and system - Google Patents
Digital intelligent IGBT driving method and system Download PDFInfo
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Abstract
The invention discloses a digital intelligent IGBT driving method and a system thereof, wherein the driving method comprises the following steps of S1: after power-on, detecting di/dt data and dv/dt data; s2: judging whether the di/dt data and the dv/dt data accord with a preset value or not within the nth small time period; s3: adjusting an array mode of the variable gate resistance; s4: detecting the di/dt data and the dv/dt data, executing the step S2 and the step S3 again, and circulating for m times until the di/dt data and the dv/dt data accord with preset values; s5: switching on or switching off the variable gate resistance according to the array mode of the variable gate resistance stored in the memory in m cycles in each small time period until power failure; the invention does not need to select the working mode of the IGBT module in advance, and does not need to strictly require that the IGBT modules are all manufactured by the same manufacturer or even in the same batch, thereby ensuring that the turn-on time and the turn-off time of each IGBT module are fixed.
Description
Technical Field
The invention belongs to the field of power electronics, and particularly relates to a digital intelligent IGBT (Insulated gate bipolar Transistor) driving method and a system thereof.
Background
The power electronic system is composed of a main circuit and a control circuit. The main circuit is composed of switching devices such as IGBT, the operating environment of the high-power IGBT is generally severe, the voltage borne by the high-power IGBT can be as high as over kilovolt, and once a fault occurs, the fault is not processed in time, so that serious consequences and even safety accidents can be caused. The driving circuit is an interface between the main circuit and the control circuit, and the performance of the driving circuit directly affects the working performance of the whole system. Therefore, a good driving circuit can enable the IGBT to work in a more ideal switching state and is of great importance to the safe operation of the whole system.
The traditional IGBT drive consists of discrete components and pure analog components, the realized protection function is limited, even if a fault occurs, the drive circuit reports the fault by sending high and low levels or pulses with a certain width to the control circuit, all functions of the system are closed to protect the IGBT, and the fault information is not recorded, so that the fault reason cannot be analyzed to solve the fault problem in a targeted manner. In addition, for traditional IGBT drive, each driver is only suitable for the IGBT of the corresponding model, and compatibility is poor.
In recent years, with the development of power electronic technology, digital IGBT driving appears, which not only solves the above problems, but also controls the on/off of the IGBT, reduces switching delay and miller plateau time, and reduces switching loss. However, the existing digital driving still has the following defects:
(1) only as logic processing, for different series and models of IGBT modules, the turn-on and turn-off can not be carried out by dv/dt and di/dt which are consistent with preset values within set time, so that the declared intellectualization can not be completely achieved.
(2) The series and parallel applications of the IGBT modules are still discussed separately, or even though the IGBT modules are put together, the corresponding series and parallel applications can be realized only by selecting a single tube, a series or a parallel mode in advance, and the IGBT modules of the same manufacturer and the same batch are required to be used, which undoubtedly limits the series and parallel applications of the IGBT modules.
The above background disclosure is only for the purpose of assisting understanding of the inventive concept and technical solutions of the present invention, and does not necessarily belong to the prior art of the present patent application, and should not be used for evaluating the novelty and inventive step of the present application in the case that there is no clear evidence that the above content is disclosed at the filing date of the present patent application.
Disclosure of Invention
In order to solve the above problems, the present invention provides a digital intelligent IGBT driving method and a system thereof, wherein the present invention provides a digital intelligent IGBT driving method for controlling an IGBT module to be turned on or off for a fixed time between power-on and power-off, comprising the steps of:
s1: after electrification, detecting di/dt data and dv/dt data of an nth small time period in an on or off time period;
s2: judging whether the di/dt data and the dv/dt data accord with a preset value or not within an nth small time period according to the obtained di/dt data and the dv/dt data;
s3: adjusting the array mode of the variable gate resistance within the nth hour period according to the judgment result, correspondingly controlling the turn-on or turn-off time of the IGBT module, and memorizing and storing the array mode corresponding to the variable gate resistance within the hour period;
s4: detecting di/dt data and dv/dt data of the (n + 1) th small time period, and executing the step S2 and the step S3 again to loop for m times until the di/dt data and the dv/dt data accord with a preset value;
s5: turning on or off the variable gate resistance array pattern for each small period of time memorized and stored in the m-times loop from step S1 to step S4 until power off in the subsequent on or off period;
di/dt is the rate of change of current; dv/dt is the rate of change of voltage; n is 1,2, 3 … …, n; m is 1,2, 3 … …, m.
Preferably, the invention can also have the following technical features:
further comprising the steps of:
1) detecting a collector-emitter voltage VCE by a VCE detection circuit;
2) comparing the acquired collector-emitter voltage VCE with different VCE threshold voltage values according to different preset VCE threshold voltage values to obtain a threshold voltage interval where the collector-emitter voltage VCE is located;
3) and analyzing the short circuit state of the IGBT module in a digital signal mode according to the threshold voltage interval.
Further comprising the steps of: the VCE threshold voltage values include a first VCE threshold voltage value, a second VCE threshold voltage value, a third VCE threshold voltage value, and a fourth VCE threshold voltage value, the first VCE threshold voltage value < the second VCE threshold voltage value < the third VCE threshold voltage value < the fourth VCE threshold voltage value; when the collector-emitter voltage VCE is smaller than a first VCE threshold voltage value, judging that the IGBT module is in a normal state; when the first VCE threshold voltage value is less than the collector-emitter voltage VCE and less than the second VCE threshold voltage value, judging that the IGBT module generates a second type short circuit; when the second VCE threshold voltage value < the collector-emitter voltage VCE < the third VCE threshold voltage value, the third VCE threshold voltage value < the collector-emitter voltage VCE < the fourth VCE threshold voltage value, or the collector-emitter voltage VCE > the fourth VCE threshold voltage value, it is determined that the IGBT module is short-circuited, and the larger the collector-emitter voltage VCE is, the more serious the short-circuiting is.
The whole opening process is divided into n time periods: t is ton0～ton1、ton1～ton2、┅、tonn-1～tonnCorresponding to a predetermined value dv/dt of the opening dataonAnd di/dtonA set of 1 × n matrices, respectively, namely: { dv/dton1，dv/dton2，┅，dv/dtonn} and { di/dton1，di/dton2，┅，di/dtonnH, corresponding n-th turn-on data dv/dtonnAnd di/dtonnRespectively represent dv/dt corresponding to the nth time segmentonPredetermined value and di/dtonA preset value.
The whole turn-off process is divided into n time periods: t is toff0～toff1、toff1～toff2、┅、toffn-1～toffnCorresponding to a preset value dv/dt of the turn-off dataoffAnd di/dtoffA set of 1 × n matrices, respectively, namely: { dv/dtoff1，dv/dtoff2，┅，dv/dtoffn} and { di/dtoff1，di/dtoff2，┅，di/dtoffnV, the corresponding nth turn-off data dv/dtoffnAnd di/dtoffnRespectively represent dv/dt corresponding to the nth time segmentoffPredetermined value and di/dtoffA preset value.
According to VCE detection circuit and di/dt detection circuit, the state of IGBT module short circuit is distinguished, namely: when the di/dt detection circuit transmits a low level to the digital control chip, a short-circuit fault occurs, and meanwhile, whether the IGBT module generates a first-class short circuit or a second-class short circuit is judged according to four groups of signals transmitted back by the VCE detection circuit, and the IGBT is turned off by selecting a corresponding mode.
After being electrified, firstly judging whether the external controller gives corresponding on-off data or not; if the IGBT module is given, the on-off of the IGBT module is controlled by data given by an external controller; otherwise, the data stored by the system controls the on-off of the IGBT module when the power is off last time.
The invention also provides a digital intelligent IGBT driving system, which is used for realizing any one of the digital intelligent IGBT driving methods, and comprises a data detection circuit for detecting the working state data of the IGBT module, a conversion circuit, a digital control chip, a driving circuit, a variable gate resistance, a memory and an external controller, wherein the digital control chip is used for judging the working state of the IGBT, and the IGBT is driven by the driving circuit and the variable gate resistance under the real-time control of the digital control chip; the data detection circuit comprises a dv/dt detection circuit and a di/dt detection circuit, and a signal detected by the dv/dt detection circuit is converted into a digital signal by the conversion circuit and then is analyzed by the digital control chip; the signal detected by the di/dt detection circuit is converted into a digital signal by the conversion circuit for the analysis of the digital control chip, and the signal detected by the di/dt detection circuit is compared and directly transmitted to the digital control chip for analysis; the memory is used for storing on or off data; and the external controller is used for controlling the IGBT module to be switched on and off according to the switching-on or switching-off data stored in the memory or the switching-on or switching-off data given by the external controller after the power is on.
Preferably, the digital control chip further comprises a VCE detection circuit, wherein a signal detected by the VCE detection circuit is directly provided for the digital control chip to analyze without being converted by the conversion circuit, and the VCE detection circuit comprises four preset comparators with different VCE threshold voltage values.
Preferably, the device further comprises an undervoltage detection circuit, an over-temperature detection circuit, an active clamping AC L circuit and/or a signal indication module.
Compared with the prior art, the invention has the advantages that: when the IGBT modules are used in parallel or in series, the working modes (single tube, series connection and parallel connection) of the IGBT modules do not need to be selected in advance, the IGBT modules are not strictly required to be the same manufacturer or even the same batch, and the series voltage equalizing or the parallel current equalizing of the IGBTs can be realized only by ensuring that the turn-on time and the turn-off time of each IGBT module are fixed, namely ensuring that dv/dt and di/dt are the same in each time period in the turn-on and turn-off processes, so that the series voltage equalizing or the parallel current equalizing of the IGBT modules is realized more intelligently.
Drawings
FIG. 1 is a first flowchart of a first embodiment of the present invention;
FIG. 2 is a second flowchart of a second embodiment of the present invention;
fig. 3 is a specific flowchart of the first embodiment and the second embodiment of the present invention for the turn-on process of the IGBT;
fig. 4 is a specific flowchart of the turn-off process of the IGBT according to the first embodiment and the second embodiment of the present invention;
fig. 5 is a specific adjustment diagram for the nth (n-1, 2, …, n) time period during the turn-on process of the IGBT according to the first embodiment of the present invention;
FIG. 6 is a flowchart of VCE detection according to one embodiment of the present invention;
FIG. 7 shows a specific determination method of the first and second VCE detection circuits according to the first embodiment;
FIG. 8 is a schematic circuit diagram of digital intelligent IGBT driving in the third, fourth and fifth embodiments of the present invention;
FIG. 9 is an embodiment of a variable gate resistance of examples three, four, and five of the present invention;
FIG. 10 is a circuit diagram of VCE detection in the third, fourth and fifth embodiments of the present invention;
FIG. 11 is a circuit diagram of di/dt detection in the third, fourth and fifth embodiments of the present invention;
fig. 12 is a circuit diagram applied to the series connection of N IGBTs in the fourth embodiment of the present invention;
fig. 13 is a circuit diagram of the fifth embodiment of the present invention when the present invention is applied to parallel connection of N IGBTs.
Detailed Description
The present invention will be described in further detail with reference to the following detailed description and accompanying drawings. It should be emphasized that the following description is merely exemplary in nature and is not intended to limit the scope of the invention or its application.
Non-limiting and non-exclusive embodiments will be described with reference to the following figures 1-13, wherein like reference numerals refer to like parts, unless otherwise specified.
The first embodiment is as follows:
the embodiment provides a digital intelligent IGBT driving method for controlling an IGBT module to be turned on or off for a fixed time between power-on and power-off, as shown in fig. 1, including the following steps:
s1: after electrification, detecting di/dt data and dv/dt data of an nth small time period in an on or off time period;
s2: judging whether the di/dt data and the dv/dt data accord with a preset value or not within an nth small time period according to the obtained di/dt data and the dv/dt data;
s3: adjusting the array mode of the variable gate resistance within the nth hour period according to the judgment result, correspondingly controlling the turn-on or turn-off time of the IGBT module, and memorizing and storing the array mode corresponding to the variable gate resistance within the hour period;
s4: detecting di/dt data and dv/dt data of the (n + 1) th small time period, and executing the step S2 and the step S3 again to loop for m times until the di/dt data and the dv/dt data accord with a preset value;
s5: turning on or off the variable gate resistance array pattern for each small period of time memorized and stored in the m-times loop from step S1 to step S4 until power off in the subsequent on or off period;
di/dt is the rate of change of current; dv/dt is the rate of change of voltage; n is 1,2, 3 … …, n; m is 1,2, 3 … …, m.
As shown in fig. 3, in the turn-on process of the IGBT module, dv/dt and di/dt of the nth time period are detected, and whether dv/dt corresponding to the preset dv/dt of the nth time period is determinedonnAnd di/dtonnAnd if the time periods are not consistent, judging whether the time periods are larger than or smaller than the preset value of the time period. If the current is greater than the preset value of the time period, adjusting the variable gate resistance to be switched on in the corresponding switching-on time period to increase the gate switching-on resistance; if the current value is less than the preset value, adjusting the corresponding opening time periodOpening the variable gate resistance to reduce the gate opening resistance, detecting, judging and adjusting the time period again when the IGBT module is opened next time, and circulating the steps until dv/dt and di/dt in the time period and the opening preset value dv/dt of the corresponding time periodonnAnd di/dtonnUntil they match. And then, in the nth time slot in the turn-on process of the IGBT module, the IGBT module is turned on by the variable gate resistance adjusted in the time slot.
As shown in fig. 4, in the turn-off process of the IGBT module, dv/dt and di/dt of the nth time period are detected, and whether dv/dt corresponding to the preset dv/dt of the nth time period is determinedoffnAnd di/dtoffnAnd if the time periods are not consistent, judging whether the time periods are larger than or smaller than the preset value of the time period. If the time is larger than the preset value of the time period, the variable gate resistance is adjusted to be turned off in the corresponding turn-off time period so as to increase the gate turn-off resistance; if the current value is less than the preset value, the variable gate pole resistance is adjusted to be turned off in the corresponding turn-off time period to reduce the gate pole turn-off resistance, the time period is detected, judged and adjusted again when the IGBT module is turned off next time, and the process is circulated until dv/dt, di/dt and the turn-off preset value dv/dt in the corresponding time period in the time periodoffnAnd di/dtoffnUntil they match. And then, in the nth time period in the turn-off process of the IGBT module, the IGBT module is turned off by the variable gate resistance adjusted in the time period.
As shown in fig. 5, in the first turn-on process of the IGBT module, dv/dt and di/dt of the time period are detected as follows: dv/dton1And di/dton1After being judged to be smaller than the preset value dv/dt of the time periodon1And di/dton1Adjusting the turn-on variable gate resistance corresponding to the turn-on time period to reduce the gate turn-on resistance value; in the second opening process, detecting dv/dt and di/dt of the time period, wherein the dv/dt and the di/dt are respectively as follows: dv/dton2And di/dton2After being judged to be larger than the preset value dv/dt of the time periodon1And di/dton1Adjusting the turn-on variable gate resistance corresponding to the turn-on time period to increase the gate turn-on resistance value; the above steps are circulated until the m-th opening process detects that the time period isdv/dt, di/dt and preset values are matched. And then, in the nth time slot in the turn-on process of the IGBT module, the IGBT module is turned on by the variable gate resistance adjusted in the time slot.
The adjustment process of the nth (n is 1,2, …, n) time period in the turn-off process of the IGBT module is similar to the turn-on process, and is not described again.
In this embodiment, the whole activation process is divided into n time periods: t is ton0～ton1、ton1～ton2、┅、tonn-1～tonnCorresponding to a predetermined value dv/dt of the opening dataonAnd di/dtonA set of 1 × n matrices, respectively, namely: { dv/dton1，dv/dton2，┅，dv/dtonn} and { di/dton1，di/dton2，┅，di/dtonnH, corresponding n-th turn-on data dv/dtonnAnd di/dtonnRespectively represent dv/dt corresponding to the nth time segmentonPredetermined value and di/dtonA preset value.
The whole turn-off process is divided into n time periods: t is toff0～toff1、toff1～toff2、┅、toffn-1～toffnCorresponding to a preset value dv/dt of the turn-off dataoffAnd di/dtoffA set of 1 × n matrices, respectively, namely: { dv/dtoff1，dv/dtoff2，┅，dv/dtoffn} and { di/dtoff1，di/dtoff2，┅，di/dtoffnV, the corresponding nth turn-off data dv/dtoffnAnd di/dtoffnRespectively represent dv/dt corresponding to the nth time segmentoffPredetermined value and di/dtoffA preset value.
The intelligent driving mode provided by the above method can rapidly approach the preset value by adjusting the turn-on and turn-off time of the IGBT within a plurality of hours of the turn-on or turn-off time, and can realize judgment and analysis within a smaller time period by detecting the data of dv/dt and di/dt and comparing the dv/dt and the di/dt with the preset value as the turn-on and turn-off of the IGBT are generally in the mu s level, thereby realizing multiple cycles to rapidly approach the preset value.
In this embodiment, as shown in fig. 6, the method further includes the following steps:
1) detecting a collector-emitter voltage VCE (VCE) by a VCE detection circuit;
2) comparing the acquired collector-emitter voltage VCE with different VCE threshold voltage values according to different preset VCE threshold voltage values to obtain a threshold voltage interval where the collector-emitter voltage VCE is located;
3) and analyzing the short circuit state of the IGBT module in a digital signal mode according to the threshold voltage interval.
As shown in fig. 7, wherein 0 represents a low level, 1 represents a high level, and 0, 1 is a signal that can be recognized by the digital control chip; the VCE threshold voltage values include a first VCE threshold voltage Value (VCE)REF1) A second VCE threshold voltage Value (VCE)REF2) A third VCE threshold voltage Value (VCE)REF3) And a fourth VCE threshold voltage Value (VCE)REF4)，VCEREF1～VCEREF4Respectively, different threshold voltages of VCE set in advance, and VCEREF1<VCEREF2<VCEREF3<VCEREF4And the state of the IGBT is judged by detecting the range of the VCE and transmitting the judgment results VCE 1-VCE 4 to the digital control chip. Of course, VCE (collector-emitter voltage VCE) is detected only when the IGBT is turned on, and is not detected when the IGBT is turned off. When VCE is started<VCEREF1Judging that the IGBT is in a normal state; when VCE is startedREF1<VCE<VCEREF2Judging that the IGBT has a second type short circuit; when VCE is startedREF2<VCE<VCEREF3、VCEREF3<VCE<VCEREF4Or VCE>VCEREF4And judging that the IGBT has a short circuit, wherein the larger the VCE is, the more serious the short circuit is.
In the short circuit detection of the embodiment, the collector-emitter voltage is collected and judged by a plurality of comparators, and the digital signal obtained according to the judgment is controlled by the digital control chip to complete the short circuit judgment; by the detection method, the detected collector-emitter voltage does not need to be sent to the digital control chip after being converted by the conversion circuit, the judgment speed is improved, and the comparator can be of a high-speed type to reduce delay.
Example two
As shown in FIG. 2, the difference between the first embodiment and the second embodiment is that after the power-on, the second embodiment has two working modes, ①, the IGBT module operates according to the turn-on and turn-off data given by the external controller, ②, the IGBT module operates according to the turn-on and turn-off data stored during the last power-off, after the system is powered on, whether the external controller gives the corresponding turn-on and turn-off data is judged, if the external controller gives the corresponding turn-on and turn-off data, the IGBT module is controlled to be turned on and off according to the data given by the external controller, otherwise, the IGBT module is controlled to be turned on and off according to the data stored during the last power-off, after each turn-on and turn-off, the IGBT module is directly turned on and turned off according to the data dv/dt and the change rate of the collector current, and the data corresponding to the time periods are converted by a conversion circuit to judge whether the data preset in each time period in the chip are consistent with the IGBT module, if the data are consistent to the data, the IGBT module is directly turned on and turn-off, the IGBT module is operated according to the preset value dv/dt, otherwise, the corresponding turn-on and turn-off resistance value of the IGBT module is detected, and the IGBT module is adaptively changed according to the corresponding turn-on and turn-off, and turn-on/dt, and turn-off time, and turn-off, and turn-on and turn-off time of the IGBT module is finally.
In this embodiment, when a short-circuit fault occurs, the system can distinguish the short-circuit state of the IGBT according to the VCE detection circuit and the di/dt detection circuit, that is: when the di/dt detection circuit transmits a low level to the digital control chip, a short-circuit fault occurs, and meanwhile, whether the IGBT module generates a first-class short circuit or a second-class short circuit is judged according to four groups of signals transmitted back by the VCE detection circuit, and the IGBT is turned off by selecting a corresponding mode, so that a voltage spike generated during turn-off is prevented from exceeding a safe working area of the IGBT. Compared with the traditional method for distinguishing the short circuit of the IGBT, the method provided by the invention has relatively higher reliability for judging the short circuit state.
EXAMPLE III
Fig. 8 is a circuit diagram of a digital intelligent IGBT driving system according to this embodiment, which includes a data detection circuit for detecting operating status data of an IGBT module, a conversion circuit 4, a digital control chip 5, a driving circuit, a variable gate resistor 10, an external controller 12, and a memory 13; the data detection circuit comprises a dv/dt detection circuit 1 and a di/dt detection circuit 3, wherein the input end of the di/dt detection circuit 3 is connected with the collector of the IGBT module, and the output end of the di/dt detection circuit 3 is connected with the input end of the conversion circuit 4; the input end of the di/dt detection circuit 3 is connected with the power emitter and the auxiliary emitter of the IGBT, and the output end of the di/dt detection circuit is connected with the input ends of the conversion circuit 4 and the digital control chip 5 respectively.
The output end of the conversion circuit 4 is connected with the input end of the digital control chip 5, the acquired dv/dt and di/dt of the IGBT module are output to the digital control chip 5 in real time so as to be used for analyzing the state of the IGBT module, the result to be executed is transmitted to the variable gate resistance 10 through the driving circuit 9, and the IGBT module is switched on and off within fixed switching-on and switching-off time by changing the resistance value of the variable gate resistance 10 so as to switch on and switch off the set dv/dt and di/dt; the output end of the digital control chip 5 is connected with the input end of the memory 13 so as to store corresponding data into the memory 13, and the digital control chip is convenient to use when being electrified next time.
Fig. 9 shows an embodiment of the variable gate resistor 10 of the present embodiment, which is formed by a switching device and a corresponding resistor network. In the figure, one end of each of the switches S11-S1 n is connected with the turn-on voltage VCC of the IGBT module, the other end is respectively connected with one end of each of the turn-on resistors Rgon 1-Rgon, the other end of each of the turn-on resistors Rgon 1-Rgon is connected to the base electrode of the IGBT module, and the on-off of the corresponding turn-on resistor is controlled by controlling the on-off of the n switches S11-S1 n (1 represents that the corresponding switch is turned on, and 0 represents that the corresponding switch is turned off), so that the resistance value of the turn-on resistor can be controlled, and the more switches are connected, the more switches are turnedThe smaller the resistance, the control methods for turning on the variable gate resistance 10 accordingly are common:
seed growing; one end of each of the switches S21-S2 n is connected with a turn-off voltage VEE of the IGBT, the other end of each of the switches S21-S2 n is connected with one end of each of turn-off resistors Rgoff 1-Rgoffn, the other end of each of the turn-off resistors Rgoff 1-Rgoffn is connected with a base electrode of the IGBT module, whether the corresponding turn-off resistor is connected or not is controlled by controlling the on-off of the n switches S21-S2 n (1 represents that the corresponding switch is connected, and 0 represents that the corresponding switch is connected), so that the resistance value of the turn-off resistor is controlled, the more switches are connected, the smaller the turn-off resistor is:
and (4) seed preparation. In the embodiment, dv/dt and di/dt in different time periods are detected in real time, the variable gate resistance 10 is correspondingly adjusted, and the resistance values of the on-off resistance are changed, so that the IGBT module can be switched on and off by dv/dt and di/dt which are consistent with preset values within the specified on-off time. Thus, the variable gate resistance 10 ultimately forms two matrices, namely: an on-gate resistance matrix associated with an on-time and an off-gate resistance matrix associated with an off-time.
As shown in fig. 10, the IGBT further includes a VCE detection circuit 2, an input end of the VCE detection circuit 2 is connected to a collector of the IGBT module, and an output end of the VCE detection circuit is connected to an input end of the digital control chip 5;
four sets of digital signals transmitted to the digital control chip 5 are obtained by comparing the VCE after the voltage reduction process with four sets of different threshold voltages, and for the di/dt detection circuit diagram shown in FIG. 11, the di/dt after the voltage reduction process is compared with the threshold voltage VEREFAnd comparing to obtain a signal transmitted to the digital control chip 5. When di/dt>VEREFWhen the IGBT module is in short circuit fault, the comparator outputs low level, the low level is transmitted to the digital control chip 5, and the short circuit fault of the IGBT module is judged; when di/dt<VEREFAnd when the IGBT module is in a normal state, the comparator outputs a low level, the low level is transmitted to the digital control chip 5, and the IGBT module is judged to be in a normal state.
As shown in fig. 8, the present embodiment may further include an active clamp AC L circuit 11, and when the IGBT collector-emitter voltage VCE exceeds the allowable value of the active clamp AC L circuit 11, the active clamp AC L circuit 11 operates to clamp the IGBT module collector-emitter voltage VCE within the allowable range of the system.
As shown in fig. 8, the present embodiment may further include a signal indication module 5, and the system may output a state signal of the corresponding IGBT module through the signal indication module 5, and particularly, when the IGBT module fails, the state signal may be timely transmitted to the outside, so as to protect the entire system.
Of course, as shown in fig. 8, the present embodiment may further include an undervoltage detection circuit 6, an over-temperature detection circuit 7, output terminals of the undervoltage detection circuit 6, the over-temperature detection circuit 7 and the external controller 12 are all connected to the input terminal of the digital control chip 5, so as to transmit the input voltage signal and the temperature signal to the digital control chip 5.
Example four
When the IGBT modules are used in parallel or in series, the working modes (single tube, series connection and parallel connection) of the IGBT modules do not need to be selected in advance, the IGBT modules are not strictly required to be the same manufacturer or even the same batch, and the series voltage equalizing or the parallel current equalizing of the IGBTs can be realized only by ensuring that the turn-on time and the turn-off time of each IGBT module are fixed, namely ensuring that dv/dt and di/dt are the same in each time period in the turn-on and turn-off processes, so that the series voltage equalizing or the parallel current equalizing of the IGBT modules is realized more intelligently.
Fig. 12 is a circuit diagram of the digital intelligent IGBT driving system according to the present invention applied to series connection of N IGBT modules. In fig. 9, each IGBT module needs a digital intelligent IGBT driver according to the present invention to control the turn-on/turn-off of the corresponding IGBT module at a fixed time, so that each IGBT module can be turned on/off at a constant time, and finally, series connection voltage sharing is achieved.
EXAMPLE five
Fig. 13 is a circuit diagram illustrating the application of the digital intelligent IGBT driving proposed in this embodiment to the parallel connection of N IGBT modules. In fig. 13, each IGBT module needs a digital intelligent IGBT driver according to the present invention to control the turn-on/turn-off of the corresponding IGBT module at a fixed time, so that each IGBT module can be turned on/off at a constant time, and parallel current sharing is finally achieved.
Therefore, compared with the conventional digital driving, the digital intelligent IGBT driving system provided in the present embodiment has a higher degree of intelligence, higher reliability, and stronger applicability.
Those skilled in the art will recognize that numerous variations are possible in light of the above description, and thus the examples are intended to describe one or more specific embodiments.
While there has been described and illustrated what are considered to be example embodiments of the present invention, it will be understood by those skilled in the art that various changes and substitutions may be made therein without departing from the spirit of the invention. In addition, many modifications may be made to adapt a particular situation to the teachings of the present invention without departing from the central concept described herein. Therefore, it is intended that the invention not be limited to the particular embodiments disclosed, but that the invention will include all embodiments and equivalents falling within the scope of the invention.
Claims (10)
1. A digital intelligent IGBT driving method is characterized in that the method is used for controlling an IGBT module to be switched on or switched off in a fixed time between power-on and power-off, and comprises the following steps:
s1: after electrification, detecting di/dt data and dv/dt data of an nth small time period in an on or off time period;
s2: judging whether the di/dt data and the dv/dt data accord with a preset value or not within an nth small time period according to the obtained di/dt data and the dv/dt data;
s3: adjusting the array mode of the variable gate resistance within the nth hour period according to the judgment result, correspondingly controlling the turn-on or turn-off time of the IGBT module, and memorizing and storing the array mode corresponding to the variable gate resistance within the hour period;
s4: detecting di/dt data and dv/dt data of the (n + 1) th small time period, and executing the step S2 and the step S3 again to loop for m times until the di/dt data and the dv/dt data accord with a preset value;
s5: turning on or off the variable gate resistance array pattern for each small period of time memorized and stored in the m-times loop from step S1 to step S4 until power off in the subsequent on or off period;
di/dt is the rate of change of current; dv/dt is the rate of change of voltage; n is 1,2, 3 … …, n; m is 1,2, 3 … …, m.
2. The digital intelligent IGBT driving method according to claim 1, further comprising the steps of:
1) detecting a collector-emitter voltage VCE by a VCE detection circuit;
2) comparing the acquired collector-emitter voltage VCE with different VCE threshold voltage values according to different preset VCE threshold voltage values to obtain a threshold voltage interval where the collector-emitter voltage VCE is located;
3) and analyzing the short circuit state of the IGBT module in a digital signal mode according to the threshold voltage interval.
3. The digital intelligent IGBT driving method according to claim 2, further comprising the steps of: the VCE threshold voltage values include a first VCE threshold voltage value, a second VCE threshold voltage value, a third VCE threshold voltage value, and a fourth VCE threshold voltage value, the first VCE threshold voltage value < the second VCE threshold voltage value < the third VCE threshold voltage value < the fourth VCE threshold voltage value; when the collector-emitter voltage VCE is smaller than a first VCE threshold voltage value, judging that the IGBT module is in a normal state; when the first VCE threshold voltage value is less than the collector-emitter voltage VCE and less than the second VCE threshold voltage value, judging that the IGBT module generates a second type short circuit; when the second VCE threshold voltage value < the collector-emitter voltage VCE < the third VCE threshold voltage value, the third VCE threshold voltage value < the collector-emitter voltage VCE < the fourth VCE threshold voltage value, or the collector-emitter voltage VCE > the fourth VCE threshold voltage value, it is determined that the IGBT module is short-circuited, and the larger the collector-emitter voltage VCE is, the more serious the short-circuiting is.
4. The digital intelligent IGBT driving method according to claim 1, wherein the entire turn-on process is divided into n time periods: t is ton0～ton1、ton1～ton2、┅、tonn-1～tonnCorresponding to a predetermined value dv/dt of the opening dataonAnd di/dtonA set of 1 × n matrices, respectively, namely: { dv/dton1，dv/dton2，┅，dv/dtonn} and { di/dton1，di/dton2，┅，di/dtonnH, corresponding n-th turn-on data dv/dtonnAnd di/dtonnRespectively represent dv/dt corresponding to the nth time segmentonPredetermined value and di/dtonA preset value.
5. The digital intelligent IGBT driving method according to claim 1, wherein the entire turn-off process is divided into n time periods: t is toff0～toff1、toff1～toff2、┅、toffn-1～toffnCorresponding to a preset value dv/dt of the turn-off dataoffAnd di/dtoffA set of 1 × n matrices, respectively, namely: { dv/dtoff1，dv/dtoff2，┅，dv/dtoffn} and { di/dtoff1，di/dtoff2，┅，di/dtoffnV, the corresponding nth turn-off data dv/dtoffnAnd di/dtoffnRespectively represent dv/dt corresponding to the nth time segmentoffPredetermined value and di/dtoffA preset value.
6. The digital intelligent IGBT driving method according to claim 1, wherein the IGBT module short circuit state is distinguished according to the VCE detection circuit and the di/dt detection circuit, that is: when the di/dt detection circuit transmits a low level to the digital control chip, a short-circuit fault occurs, and meanwhile, whether the IGBT module generates a first-class short circuit or a second-class short circuit is judged according to four groups of signals transmitted back by the VCE detection circuit, and the IGBT is turned off by selecting a corresponding mode.
7. The digital intelligent IGBT driving method according to claim 1, wherein after power-on, it is first determined whether the external controller gives corresponding on and off data; if the IGBT module is given, the on-off of the IGBT module is controlled by data given by an external controller; otherwise, the data stored by the system controls the on-off of the IGBT module when the power is off last time.
8. A digital intelligent IGBT driving system is characterized in that the digital intelligent IGBT driving system is used for realizing the digital intelligent IGBT driving method according to any one of the claims 1-7, and comprises a data detection circuit for detecting the working state data of an IGBT module, a conversion circuit, a digital control chip, a driving circuit, a variable gate resistance, a memory and an external controller, wherein the digital control chip is used for judging the working state of the IGBT, and the IGBT is driven by the driving circuit and the variable gate resistance under the real-time control of the digital control chip; the data detection circuit comprises a dv/dt detection circuit and a di/dt detection circuit, and a signal detected by the dv/dt detection circuit is converted into a digital signal by the conversion circuit and then is analyzed by the digital control chip; the signal detected by the di/dt detection circuit is converted into a digital signal by the conversion circuit for the analysis of the digital control chip, and the signal detected by the di/dt detection circuit is compared and directly transmitted to the digital control chip for analysis; the memory is used for storing on or off data; and the external controller is used for controlling the IGBT module to be switched on and off according to the switching-on or switching-off data stored in the memory or the switching-on or switching-off data given by the external controller after the power is on.
9. The digital intelligent IGBT drive system according to claim 8, wherein: the digital control circuit also comprises a VCE detection circuit, wherein signals detected by the VCE detection circuit are directly supplied to the digital control chip for analysis without being converted by the conversion circuit, and the VCE detection circuit comprises four preset comparators with different VCE threshold voltage values.
10. The digital intelligent IGBT driving system according to claim 8, further comprising an undervoltage detection circuit, an over-temperature detection circuit, an active clamping AC L circuit and/or a signal indication module.
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| CN110673010B (en) * | 2019-10-29 | 2022-01-21 | 全球能源互联网研究院有限公司 | Method and device for measuring and calculating grid internal resistance of power semiconductor device |
| CN112731093B (en) * | 2020-12-14 | 2024-04-19 | 中车永济电机有限公司 | High-power IGBT adaptation method |
| CN115021734A (en) * | 2022-06-22 | 2022-09-06 | 国网智能电网研究院有限公司 | An IGBT driver optimization method and system |
| CN115021739A (en) * | 2022-06-24 | 2022-09-06 | 重庆大学 | Dynamic regulation and control circuit and method based on direct detection of device switching voltage change rate |
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