CN107395038B - A kind of generator power circuit of more MOS wired in parallel - Google Patents
A kind of generator power circuit of more MOS wired in parallel Download PDFInfo
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- CN107395038B CN107395038B CN201710701341.5A CN201710701341A CN107395038B CN 107395038 B CN107395038 B CN 107395038B CN 201710701341 A CN201710701341 A CN 201710701341A CN 107395038 B CN107395038 B CN 107395038B
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/23—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only arranged for operation in parallel
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Dc-Dc Converters (AREA)
Abstract
The present invention provides a kind of generator power circuit of more MOS wired in parallel, including the first circuit and second circuit and resonance circuit of mirror image each other and load；First circuit and second circuit respectively include sequentially connected driving circuit, metal-oxide-semiconductor power module and resonant inductance；Two resonant inductances of the first circuit and second circuit, for inhibiting to the high-frequency ac pulse signal flowed through, the value for the high-frequency ac pulse signal for exporting two resonant inductances is consistent.The present invention not only can guarantee that the electric current for flowing through two metal-oxide-semiconductor power modules in parallel is consistent；And it is simple and easy, low in cost, circuit structure is simple；Further, moreover it is possible to significantly improve the compatibility to metal-oxide-semiconductor, extend the service life of metal-oxide-semiconductor, while guarantee metal-oxide-semiconductor using safe.
Description
Technical field
The present invention relates to power technique fields, the hair of more MOS wired in parallel in high-frequency and high-voltage generator is particularly related to
Raw device power circuit.
Background technique
In medical imaging equipment digital imaging technology, strong electrical field is needed to excite electron cloud, X-ray is generated, wherein high
Frequency high pressure generator is used to required electric field.The major function of the high-frequency and high-voltage generator is the 380V that power frequency is inputted
AC conversion be tens of thousands of to ten tens of thousands of volts of high voltage direct current, in order to reduce the volume of the generator, we are general
High-frequency inversion will be carried out again after the AC rectification of 380V, the alternating-current pulse after inversion is by generator boosting, rectification, most
Load is output to by high-tension cable afterwards.
Since working time when generating ray is short, usually within 1 second, the operating mode of individual short time is only several
A millisecond it requires that the immediate current generated in reversals is very big.In order to reduce the volume of generator, it would be desirable to
Switching frequency is improved, we accomplish that 100KHZ-300KHZ frequency control, maximum power have accomplished 100KW at present.Most in view of frequency
For height in 300KHZ, the switching device being able to satisfy on the market only has MOSFET (Metallic Oxide Semiconductor
Field effecttransistor), it is not limited to first generation plane MOS, second generation COOLMOS or third generation SIC MOS
And the MOSFET of other different process.The current class of MOSFET be not usually it is very high, current class it is big also there was only tens
Peace, and maximum current peak can arrive 600A when our generator work, so needing multiple MOSFET in parallel.Multiple MOSFET
After parallel connection, junction capacity increases, and proposes very high request to the ability of drive module, we divide MOS module inverter circuit thus
At two groups, each unit multiple metal-oxide-semiconductors in parallel again only draw one for simplicity in Fig. 1.Due to flowing through entire MOS module
Electric current it is very big, and the current class of single MOSFET is very small, it is desirable that electric current can uniform flow it is each
MOSFET.We are isometric by PCB layout under normal circumstances, and cabling mode consistent mode reduces stray inductance etc.,
It is interfered with this to minimize the driving between different MOSFET, but in different batches MOSFET and faces different EMC
When (Electromagnetic Compatibility electromagnetic interference) interference signal and each discrete component such as resistance, capacitor miss
When difference is different, interference can be generated to the electric current for flowing through different metal-oxide-semiconductor power modules, cause current-unbalance, work long hours
Easily cause the generation of bombing event.
Therefore, it is necessary to provide it is a kind of corresponding can solve it is above-mentioned due to MOSFET batch is different and EMC interference signal with
And discrete component error it is different when the caused current-unbalance for flowing through metal-oxide-semiconductor power module the problem of generator power electricity
Road.
Summary of the invention
The technical problems to be solved by the present invention are: providing a kind of generator power circuit of more MOS wired in parallel, realize
To the parallel current-sharing of more MIS modules, guarantee the current balance for flowing through MOS module.
In order to solve the above-mentioned technical problem, the technical solution adopted by the present invention are as follows:
A kind of generator power circuit of more MOS wired in parallel, the first circuit and second circuit including mirror image each other, with
And resonance circuit and load；
First circuit and second circuit respectively include sequentially connected driving circuit, metal-oxide-semiconductor power module and resonance
Inductance；
It is connect after the resonant inductance of first circuit and second circuit is in parallel with the input terminal of the resonance circuit, it is described
The output end of resonance circuit and the load connect；
The driving circuit, for after isolation amplification, exporting the pulse signal received to the metal-oxide-semiconductor power
Module；
The metal-oxide-semiconductor power module, for the frequency according to the driving circuit, after carrying out isolation amplification for what is received
Pulse drive signal carry out high-frequency inversion, output is to resonant inductance after forming high-frequency ac pulse signal；
Two resonant inductances of the first circuit and second circuit, for pressing down to the high-frequency ac pulse signal flowed through
The value of system, the high-frequency ac pulse signal for exporting two resonant inductances is consistent；
Two resonant inductances of the resonance circuit and the first circuit and second circuit constitute LLC resonance circuit, the LLC
Resonance circuit is used to carry out frequency-selecting control to the high-frequency ac pulse signal according to the frequency of the driving circuit, and output phase is answered
Size of current to load.
The beneficial effects of the present invention are: the present invention by by the resonant inductance of the metal-oxide-semiconductor power module rear class after parallel connection
Splitting becomes two independences, equivalent resonant inductance, and each metal-oxide-semiconductor power module connects a resonant inductance.Utilize inductance electricity
The principle that stream cannot be mutated, it is identical by two resonant inductance amounts, it is also identical to the rejection ability of the electric current flowed through, electricity can be prevented
The mutation of stream, so that the electric current that two metal-oxide-semiconductor power modules in parallel flow through is consistent.The present invention with it is simple and easy, low in cost,
The simple mode of circuit structure realizes the equilibrium for flowing through the electric current of paralleling MOS tube power module.
Detailed description of the invention
Fig. 1 is a kind of structure principle chart of the generator power circuit of more MOS wired in parallel of the present invention；
Fig. 2 is a kind of particular circuit configurations figure of the generator power circuit of more MOS wired in parallel of the embodiment of the present invention one.
Label declaration:
1, the first circuit；2, second circuit；3, resonance circuit；4, it loads；
11, the first driving circuit；12, the first metal-oxide-semiconductor power module；13, the first resonant inductance；
21, the second driving circuit；22, the second metal-oxide-semiconductor power module；23, the second resonant inductance.
Specific embodiment
To explain the technical content, the achieved purpose and the effect of the present invention in detail, below in conjunction with embodiment and cooperate attached
Figure is explained.
The most critical design of the present invention is: each metal-oxide-semiconductor power module connects a resonant inductance, resonant inductance is in parallel
After connect resonance circuit, realize the equilibrium for flowing through the electric current of paralleling MOS tube power module.
Fig. 1 is please referred to, the present invention provides a kind of generator power circuit of more MOS wired in parallel, including mirror image each other
First circuit and second circuit and resonance circuit and load；
First circuit and second circuit respectively include sequentially connected driving circuit, metal-oxide-semiconductor power module and resonance
Inductance；
It is connect after the resonant inductance of first circuit and second circuit is in parallel with the input terminal of the resonance circuit, it is described
The output end of resonance circuit and the load connect；
The driving circuit, for after isolation amplification, exporting the pulse signal received to the metal-oxide-semiconductor power
Module；
The metal-oxide-semiconductor power module, for the frequency according to the driving circuit, after carrying out isolation amplification for what is received
Pulse drive signal carry out high-frequency inversion, output is to resonant inductance after forming high-frequency ac pulse signal；
Two resonant inductances of the first circuit and second circuit, for pressing down to the high-frequency ac pulse signal flowed through
The value of system, the high-frequency ac pulse signal for exporting two resonant inductances is consistent；
Two resonant inductances of the resonance circuit and the first circuit and second circuit constitute LLC resonance circuit, the LLC
Resonance circuit is used to carry out frequency-selecting control to the high-frequency ac pulse signal according to the frequency of the driving circuit, and output phase is answered
Size of current to load.
It further, further include MCU；The output end of the MCU driving circuit with the first circuit and second circuit respectively
Input terminal connection；
The MCU, for output pulse signal to driving circuit.
The working principle of the generator power circuit of above-mentioned more MOS wired in parallel are as follows:
Signal Amplification and insulation is made into metal-oxide-semiconductor function to drive metal-oxide-semiconductor power module after the external MCU signal of driving circuit reception
Metal-oxide-semiconductor alternate conduction in rate module, output AC signal to resonant inductance connected to it；The resonant inductance of first circuit is defeated
The signal of the resonant inductance output of the second circuit of signal and same state out is equivalent, by resonance electricity after two signals are in parallel
Road powers to ohmic load.
Further, the driving circuit is exported including four road driving pulses；The metal-oxide-semiconductor power module includes four tunnels
Metal-oxide-semiconductor；
The four road driving pulses output of the driving circuit is corresponding with four road metal-oxide-semiconductors of the metal-oxide-semiconductor power module respectively
Connection.
Further, the driving circuit is exported including four road driving pulses；The metal-oxide-semiconductor power module includes four tunnels
Metal-oxide-semiconductor；
The four road driving pulses output of the driving circuit is corresponding with four road metal-oxide-semiconductors of the metal-oxide-semiconductor power module respectively
Connection.
Further, four road metal-oxide-semiconductors of the metal-oxide-semiconductor power module are the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, third
Metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4；
The metal-oxide-semiconductor power module further includes first capacitor device C1；The load is resistance R1；
The anode of the first capacitor device C1 is connect with the drain electrode of the first metal-oxide-semiconductor Q1, the drain electrode of the second metal-oxide-semiconductor Q2 respectively,
Cathode is connect with the source electrode of the source electrode of third metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4 respectively；The grid and the PFM1 of first metal-oxide-semiconductor Q1
Connection, the grid of the second metal-oxide-semiconductor Q2 are connect with the PFM2, and the grid of third metal-oxide-semiconductor Q3 is connect with the PFM3, the 4th MOS
The grid of pipe Q4 is connect with the PFM4；The source electrode of the first metal-oxide-semiconductor Q1 connect with the drain electrode of the third metal-oxide-semiconductor Q3 after with
One end of resistance R1 connects；The source electrode of the second metal-oxide-semiconductor Q2 connect with the drain electrode of the 4th metal-oxide-semiconductor Q4 after with the first circuit
Resonance circuit connection.
Embodiment one
Referring to Fig.1 and 2, being suitable for doctor the present embodiment provides a kind of generator power circuit of more MOS wired in parallel
With the size of current in the power circuit of high pressure generator, being able to achieve balanced metal-oxide-semiconductor power module, the compatibility to metal-oxide-semiconductor is improved
Property.
The generator power circuit of the present embodiment include mirror image each other the first circuit 1 and second circuit 2 and resonance electricity
Road 3 and load 4；
First circuit 1 includes the first driving circuit 11, the first metal-oxide-semiconductor power module 12 and the first resonant inductance 13；
Second circuit 2 includes the second driving circuit 21, the second metal-oxide-semiconductor power module 22 and the second resonant inductance 23；
It is connect after 23 parallel connection of first resonant inductance 13 and the second resonant inductance with the input terminal of the resonance circuit 3,
The output end of the resonance circuit 3 is connect with the load 4.
Specifically, due to the first circuit 1 and second circuit 2 mirror image each other because the structure composition of the two, connection relationship,
It acts on completely the same, is described in detail by taking the first circuit as an example herein, second circuit is not repeated.
First driving circuit receives Pulse1 (the first pulse) and Pulse2 (the second pulse) from external MCU control
After signal, by its internal transformer T1 carry out isolation amplification output four road PFM1, PFM2, PFM3, PFM4 tetra- road drive arteries and veins
Punching, wherein PFM1 and PFM4 same-phase, PFM2 and PFM3 same-phase are realized complementary；Four road signals are respectively outputted to rear class first
Four-way switch pipe Q1, Q2, Q3, Q4 of metal-oxide-semiconductor power module, for driving four road metal-oxide-semiconductors；
First metal-oxide-semiconductor power module carries out DC+, DC- according to four tunnel driving signal alternate conductions of the first driving circuit
Inversion, the AC signal after inversion are output to the first resonant inductance；
First resonant inductance cooperation rear class resonance circuit forms LLC resonant cavity together and exports to the first metal-oxide-semiconductor power module
AC signal carry out frequency-selecting, frequency is remoter from resonance frequency, and the impedance of resonant cavity is bigger；
Second resonant inductance cooperation prime resonance circuit forms LLC resonant cavity together and exports to the second metal-oxide-semiconductor power module
AC signal carry out frequency-selecting, frequency is remoter from resonance frequency, and the impedance of resonant cavity is bigger；
Ohmic load is the effect of entire circuit supplies load.
The generator power circuit of the present embodiment uses frequency control during the work time, by the first resonant inductance L1,
The resonance of second resonant inductance L2, resonance circuit, work are usually to close two in previous circuit in Sofe Switch state, L1 and L2
It is one, is divided into two inductance in parallel in the present embodiment, the inductance of L1 size consistent with the requirement of the inductance of L2, by
It is identical in rejection ability of the identical inductances to curent change, when the first metal-oxide-semiconductor power module and the second metal-oxide-semiconductor power module occur
When size of current deviation, L1 and L2 can limit the climbing speed of electric current, the size of current of balanced two metal-oxide-semiconductor power modules,
After metal-oxide-semiconductor power module is fully on, due to the positive temperature coefficient of metal-oxide-semiconductor, automatic current equalizing, the inductance L3 in resonance circuit are understood
Equivalent at transformer load with ohmic load R1, L3 is equivalent to the leakage inductance of transformer, and R1 is equivalent at transformer actual loading.
Embodiment two
Fig. 1 and 2 is please referred to, the present embodiment corresponding embodiment one provides a kind of particular circuit configurations example.
Circuit element connection type is as follows:
First driving circuit includes the first transformer T1, and the first end of the first transformer T1 and external MCU control terminal provide
The end Pulse1, the second transformer T2 first end connection, what the second end of the first transformer T1 and external MCU control terminal provided
The second end connection at the end Pulse2, the second transformer T2 is connected, the grid at the third end of the first transformer T1 and the first metal-oxide-semiconductor Q1
Connection, the 5th end of the first transformer T1 are connect with the grid of the 4th metal-oxide-semiconductor Q4, the 8th end and second of the first transformer T1
The grid of metal-oxide-semiconductor Q2 connects, and the tenth end of the first transformer T1 is connect with the grid of third metal-oxide-semiconductor Q3.
Second driving circuit includes the second transformer T2, and the first end of the second transformer T2 and external MCU control terminal provide
The end Pulse1, the second transformer T1 first end connection, what the second end of the second transformer T2 and external MCU control terminal provided
The second end connection at the end Pulse2, the first transformer T1 is connected, and the third end of the second transformer T2 and the grid of the 5th metal-oxide-semiconductor connect
It connects, the 5th end of the second transformer T2 is connect with the grid of the 8th metal-oxide-semiconductor Q8, the 8th end of the second transformer T2 and the 6th MOS
The grid of pipe Q6 connects, and the tenth end of the second transformer T2 is connect with the grid of the 7th metal-oxide-semiconductor Q7.
First metal-oxide-semiconductor power module includes first capacitor device C1, the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3
And the 4th metal-oxide-semiconductor Q4；The first end (anode) of first capacitor device C1 respectively with the drain electrode of the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2
Drain electrode connection；Second end (cathode) is connect with the source electrode of the source electrode of third metal-oxide-semiconductor Q3 and the 4th metal-oxide-semiconductor Q4 respectively；First MOS
The grid of pipe Q1 is connect with the third end (PFM1) of the first transformer T1 of the first driving circuit, second end (drain electrode) and the first electricity
The drain electrode connection of the first end of container C1, the second metal-oxide-semiconductor Q2, the drain electrode of third end (source electrode) and third metal-oxide-semiconductor Q3, ohmic load
First resistor R1 second end connection；The 8th of first transformer T1 of the grid and the first driving circuit of the second metal-oxide-semiconductor Q2
(PFM2) connection is held, second end (drain electrode) is connect with the drain electrode of the first end of first capacitor device C1, the first metal-oxide-semiconductor Q1, third end
(source electrode) is connect with the first end of the first inductance L1 in the drain electrode of the 4th metal-oxide-semiconductor Q4, the first resonant inductance；Third metal-oxide-semiconductor Q3
Grid connect with the tenth end (PFM3) of the first transformer T1 of the first driving circuit, second end (drain electrode) and the first metal-oxide-semiconductor
The second end connection of the source electrode of Q1, the first resistor R1 of ohmic load, the second end of third end (source electrode) and first capacitor C1, the
The source electrode of four metal-oxide-semiconductor Q4 connects；The 5th end of first transformer T1 of the grid and the first driving circuit of the 4th metal-oxide-semiconductor Q4
(PFM4) it connects, the first end of first inductance L1 of the second end (drain electrode) with the source electrode of the second metal-oxide-semiconductor Q2, in the first resonant inductance
Connection, third end (source electrode) is connect with the source electrode of the second end of first capacitor device C1, third metal-oxide-semiconductor Q3.
Second metal-oxide-semiconductor power module includes third capacitor C3, the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6, the 7th metal-oxide-semiconductor
Q7, the 8th metal-oxide-semiconductor Q8；The first end of third capacitor C3 is connect with the drain electrode of the drain electrode of the 5th metal-oxide-semiconductor Q5, the 6th metal-oxide-semiconductor Q6,
Second end is connect with the source electrode of the source electrode of the 7th metal-oxide-semiconductor Q7, the 8th metal-oxide-semiconductor Q8；The grid of 5th metal-oxide-semiconductor Q5 and the second driving electricity
The third end (PFM5) of the second transformer T2 on road connects, the first end of second end (drain electrode) and third capacitor C3, the 6th MOS
The drain electrode of pipe Q6 connects, and the drain electrode of third end (source electrode) and the 7th metal-oxide-semiconductor Q7, the second end of the first resistor R1 of ohmic load connect
It connects；The grid of 6th metal-oxide-semiconductor Q6 is connect with the 8th end (PFM6) of the second transformer T2 of the second driving circuit, second end (leakage
Pole) it is connect with the drain electrode of third capacitor C3 first end, the 5th metal-oxide-semiconductor Q5, the leakage of third end (source electrode) and the 8th metal-oxide-semiconductor Q8
The first end of third inductance L3 in pole, the second resonant inductance connects；The of the grid of 7th metal-oxide-semiconductor Q7 and the second driving circuit
The tenth end (PFM7) of two transformer T2 connects, second end (drain electrode) and the source electrode of the 5th metal-oxide-semiconductor Q5, the first electricity of ohmic load
The second end connection of R1 is hindered, third end (source electrode) is connect with the source electrode of the second end of third capacitor C3, the 8th metal-oxide-semiconductor Q8；8th
The grid of metal-oxide-semiconductor Q8 is connect with the 5th end (PFM8) of the second transformer of the second driving circuit, second end (drain electrode) and the 6th
The first end of third inductance L3 in the source electrode of metal-oxide-semiconductor Q6, the second resonant inductance connects, third end (source electrode) and third capacitor
The source electrode connection of the second end of C3, the 7th metal-oxide-semiconductor Q7.
First resonant inductance includes the first inductance L1, and the of the first end of the first inductance L1 and the first metal-oxide-semiconductor power module
The source electrode of two metal-oxide-semiconductors, the first metal-oxide-semiconductor power module the 4th metal-oxide-semiconductor drain electrode connection, the second electricity of second end and resonance circuit
Hold first end, the connection of the second end of third inductance L3 in the second resonant inductance of C2.
Second resonant inductance includes third inductance L3, and the of the first end of third inductance L3 and the second metal-oxide-semiconductor power module
The source electrode of six metal-oxide-semiconductors, the second metal-oxide-semiconductor power module the 8th metal-oxide-semiconductor drain electrode connection, the second electricity of second end and resonance circuit
Hold the second end connection of the first end of C2, the first inductance L1 of the first resonant inductance.
Resonance circuit includes the second capacitor C2 and the second inductance L2；The first end of second capacitor C2 and the first resonance electricity
The second end of first inductance L1 of sense, the connection of the second end of the third inductance L3 of the second resonant inductance, second end and the second inductance
The first end of L2 connects；The first end of second inductance L2 is connect with the second end of the second capacitor C2, second end and ohmic load 8
First resistor R1 first end connection.
Ohmic load includes first resistor R1；The second of second inductance L2 of the first end and resonance circuit of first resistor R1
End connection, second end and the source electrode of the first metal-oxide-semiconductor Q1 of the first metal-oxide-semiconductor power module, the third of the first metal-oxide-semiconductor power module
The drain electrode of metal-oxide-semiconductor Q3, the source electrode of the 5th metal-oxide-semiconductor Q5 of the second metal-oxide-semiconductor power module, the second metal-oxide-semiconductor power module the 7th MOS
The drain electrode of pipe Q7 connects.
The working principle of foregoing circuit are as follows:
Since the structure composition of the first circuit and second circuit, connection relationship and effect are identical, stated herein in order to repeat to tire out,
Only it is illustrated with the first circuit:
The first driving circuit in first circuit is used to receive the Pulse signal of external MCU control output, and by Pulse
Signal by exporting four tetra- road driving pulses of road PFM1, PFM2, PFM3, PFM4 after transformer T1 isolation amplification, wherein PFM1 and
PFM4 same-phase, PFM2 and PFM3 same-phase, four road PFM pulses be respectively outputted to rear class the first metal-oxide-semiconductor power module Q1,
Q2, Q3, Q4, for driving four road metal-oxide-semiconductors.
The first metal-oxide-semiconductor power module receive four road driving pulse PFM1, PFM2 from the first drive module,
PFM3, PFM4, wherein driving pulse PFM1 and PFM4 same-phase, PFM1 is complementary with the realization of PFM2 antiphase, works as driving pulse
When PFM1 and PFM4 is high level, PFM2 and PFM3 are low level, each metal-oxide-semiconductor high level conducting, at this time metal-oxide-semiconductor Q1 and MOS
Pipe Q4 conducting, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 cut-off, electric current passes through metal-oxide-semiconductor Q1 to resistance R1 from first capacitor C1 anode, then arrives humorous
Second inductance L2 of vibration circuit, again passes through its second capacitor C2, again passes through the first inductance L1 of the first resonant inductance, then pass through
Metal-oxide-semiconductor Q4 to capacitor C1 cathode DC-；
When driving pulse PFM1 and PFM4 are low level, when PFM2 and PFM3 are high level, each metal-oxide-semiconductor high level is led
Logical, metal-oxide-semiconductor Q2 and metal-oxide-semiconductor Q3 conducting at this time, metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q4 cut-off, electric current pass through MOS from first capacitor C1 anode
Pipe Q2 is to the first inductance L1, then to the second capacitor C2, using the second inductance L2, by resistance R1, by metal-oxide-semiconductor Q3 to the
One capacitor C1 cathode DC-, such inverse metamorphism are exported at alternating current, wherein the first inductance L1, the second capacitor C2, the second inductance L2
LLC resonance circuit is collectively formed；
After the first resonant inductance L1 receives the AC signal from the first metal-oxide-semiconductor power module, with rear class resonance
Circuit series connection carries out frequency-selecting control；
After the resonance circuit receives the AC signal from the first resonant inductance L1, connect with prime resonant inductance, shape
At LLC resonance circuit, resonance circuit has different hindrance functions to the current signal of different frequency, and frequency distance resonance point is got over
Far, impedance is bigger, adjusts the size of current that current signal is output to rear class ohmic load by this effect.
The ohmic load is used to act on for circuit supplies load；
Second drive module receives pulse signal Pulse1 and Pulse2 signal control from MCU, effect and the
One drive module is identical；
The second metal-oxide-semiconductor power module receive four road driving pulse PFM5, PFM6 from the second drive module,
PFM7, PFM8 are acted on identical as the effect of the first MOS power module；
After the third inductance L3 of second resonant inductance receives the AC signal from the second metal-oxide-semiconductor power module,
It is identical as the effect of the first resonant inductance L1.
In conclusion a kind of generator power circuit of more MOS wired in parallel provided by the invention, not only can guarantee and flows through
The electric current of two metal-oxide-semiconductor power modules in parallel is consistent；And it is simple and easy, low in cost, circuit structure is simple；Further
, moreover it is possible to significantly improve the compatibility to metal-oxide-semiconductor, extend the service life of metal-oxide-semiconductor, while guarantee metal-oxide-semiconductor using safe.
The above description is only an embodiment of the present invention, is not intended to limit the scope of the invention, all to utilize this hair
Equivalents made by bright specification and accompanying drawing content are applied directly or indirectly in relevant technical field, similarly include
In scope of patent protection of the invention.
Claims (5)
1. a kind of generator power circuit of more MOS wired in parallel, which is characterized in that the first circuit including mirror image each other and
Two circuits and resonance circuit and load；
First circuit and second circuit respectively include sequentially connected driving circuit, metal-oxide-semiconductor power module and resonant inductance；
It is connect after the resonant inductance of first circuit and second circuit is in parallel with the input terminal of the resonance circuit, the resonance
The output end of circuit and the load connect；
The driving circuit, for after isolation amplification, exporting the pulse signal received to the metal-oxide-semiconductor power mould
Block；
Amplified arteries and veins is isolated for the frequency according to the driving circuit in carrying out of receiving by the metal-oxide-semiconductor power module
It rushes driving signal and carries out high-frequency inversion, export after forming high-frequency ac pulse signal to resonant inductance；
Two resonant inductances of the first circuit and second circuit make for inhibiting to the high-frequency ac pulse signal flowed through
The value of the high-frequency ac pulse signal of two resonant inductances output is consistent；
Two resonant inductances of the resonance circuit and the first circuit and second circuit constitute LLC resonance circuit, the LLC resonance
Circuit is used to carry out frequency-selecting control to the high-frequency ac pulse signal according to the frequency of the driving circuit, exports corresponding electricity
Stream as low as loads greatly.
2. a kind of generator power circuit of more MOS wired in parallel as described in claim 1, which is characterized in that further include
MCU；The output end of the MCU is connect with the input terminal of the first circuit and the driving circuit of second circuit respectively；
The MCU, for output pulse signal to driving circuit.
3. a kind of generator power circuit of more MOS wired in parallel as described in claim 1, which is characterized in that the driving
Circuit is exported including four road driving pulses；The metal-oxide-semiconductor power module includes four road metal-oxide-semiconductors；
The four road driving pulses output of the driving circuit is correspondingly connected with four road metal-oxide-semiconductors of the metal-oxide-semiconductor power module respectively.
4. a kind of generator power circuit of more MOS wired in parallel as claimed in claim 3, which is characterized in that four tunnel
Driving pulse output is followed successively by tetra- road driving pulse of PFM1, PFM2, PFM3, PFM4；PFM1 the and PFM4 same-phase, PFM2 and
PFM3 same-phase.
5. a kind of generator power circuit of more MOS wired in parallel as claimed in claim 4, which is characterized in that the metal-oxide-semiconductor
Four road metal-oxide-semiconductors of power module are the first metal-oxide-semiconductor Q1, the second metal-oxide-semiconductor Q2, third metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4；
The metal-oxide-semiconductor power module further includes first capacitor device C1；The load is resistance R1；
The anode of the first capacitor device C1 is connect with the drain electrode of the first metal-oxide-semiconductor Q1, the drain electrode of the second metal-oxide-semiconductor Q2 respectively, cathode
It is connect respectively with the source electrode of the source electrode of third metal-oxide-semiconductor Q3, the 4th metal-oxide-semiconductor Q4；The grid and the PFM1 of first metal-oxide-semiconductor Q1 connects
It connects, the grid of the second metal-oxide-semiconductor Q2 is connect with the PFM2, and the grid of third metal-oxide-semiconductor Q3 is connect with the PFM3, the 4th metal-oxide-semiconductor
The grid of Q4 is connect with the PFM4；The source electrode of the first metal-oxide-semiconductor Q1 connect with the drain electrode of the third metal-oxide-semiconductor Q3 after with electricity
Hinder one end connection of R1；The drain electrode of the source electrode of the second metal-oxide-semiconductor Q2 and the 4th metal-oxide-semiconductor Q4 connect after with the first circuit
Resonance circuit connection.
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| CN201710701341.5A CN107395038B (en) | 2017-08-16 | 2017-08-16 | A kind of generator power circuit of more MOS wired in parallel |
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| JPH09149636A (en) * | 1995-11-20 | 1997-06-06 | Hitachi Ltd | Switching power supply |
| WO1998034334A1 (en) * | 1997-01-30 | 1998-08-06 | Siemens Aktiengesellschaft | Device for supplying direct current to an electrical melting unit |
| CN101248576A (en) * | 2006-05-23 | 2008-08-20 | 三菱电机株式会社 | power conversion device |
| CN104283438A (en) * | 2014-10-11 | 2015-01-14 | 国家电网公司 | voltage disturbance generator |
| CN204131407U (en) * | 2014-10-21 | 2015-01-28 | 邵阳学院 | The parallel connection of electronic power transformer and control structure |
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| CN107395038A (en) | 2017-11-24 |
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