CN107453713B - Power amplifier for improving gate-source parasitic effect - Google Patents
Power amplifier for improving gate-source parasitic effect Download PDFInfo
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- CN107453713B CN107453713B CN201710563660.4A CN201710563660A CN107453713B CN 107453713 B CN107453713 B CN 107453713B CN 201710563660 A CN201710563660 A CN 201710563660A CN 107453713 B CN107453713 B CN 107453713B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/15—Indexing scheme relating to amplifiers the supply or bias voltage or current at the drain side of a FET being continuously controlled by a controlling signal
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
本发明提供一种改善栅源寄生效应的功率放大器，包括输入匹配电路、栅源寄生补偿电路、输出匹配电路和偏置电路，其中，栅源寄生补偿电路用于补偿GaN HEMT自身的栅源寄生效应，使得栅源寄生效应对电路的影响达到最小。相对于现有技术，本发明通过改善GaN HEMT栅源寄生效应的方法来设计功率放大器，减少由于栅源寄生效应产生的输入谐波对于功率放大器的影响，提高整体电路的输出功率和效率。
The present invention provides a power amplifier with improved gate-source parasitic effect, including an input matching circuit, a gate-source parasitic compensation circuit, an output matching circuit and a bias circuit, wherein the gate-source parasitic compensation circuit is used to compensate the gate-source parasitic of the GaN HEMT itself The effect of the gate-source parasitic effect on the circuit is minimized. Compared with the prior art, the present invention designs the power amplifier by improving the gate-source parasitic effect of the GaN HEMT, reduces the influence of the input harmonics generated by the gate-source parasitic effect on the power amplifier, and improves the output power and efficiency of the overall circuit.
Description
Technical Field
The invention relates to the technical field of radio frequency communication, in particular to a power amplifier for improving output power and efficiency of a GaN HEMT gate-source parasitic effect.
Background
With the rapid development of wireless communication technology, radio frequency microwave technology is more and more important in people's daily life. In order to save more energy in the present day when energy saving and environmental protection are promoted, the communication companies usually adopt power amplifiers with high efficiency and high output power, and the amplification efficiency of non-constant envelope signals by using traditional power amplifiers such as class a and class AB is very low. Therefore, high efficiency rf power amplifiers are one of the research hotspots in academia and industry. How to improve the efficiency of the power amplifier becomes one of the hot spots in the academic world and the industrial world. A typical power amplifier obtains load impedance and source impedance of a transistor through a load traction system, and then an input-output matching circuit is designed through conjugate matching, so that the output power and the efficiency of the power amplifier are improved.
However, with the rapid development of communication technology, the input/output matching circuit is also increasingly complex, and the efficiency and output power of the conventional power amplifier cannot meet the requirements of the current wireless communication system, so that it is urgently needed to develop a method for improving the efficiency and output power of the power amplifier to meet the requirement of the current and future wireless communication systems for high transmission rate. High power and high efficiency power amplifiers are also certainly the hot spot of academic and industrial research.
In order to improve the efficiency and output power of the power amplifier, a third-generation semiconductor transistor is generally adopted, and a GaN HEMT is a representative of the third-generation semiconductor transistor, since the GaN HEMT is an active nonlinear device, a harmonic effect generated by a parasitic effect of a tube has a large influence on the whole power amplifier circuit, so that the efficiency and output power of the power amplifier are reduced, while a parasitic capacitance between drain and source is generally considered, and a parasitic capacitance between gate and source also has a great influence on the circuit.
Therefore, in order to overcome the above-mentioned drawbacks in the prior art, it is necessary to provide a solution.
Disclosure of Invention
In view of the above, the present invention provides a power amplifier for improving gate-source parasitic effect, which optimizes the existing GaN HEMT model, and since the harmonic generated by the gate-source parasitic effect has a significant influence on the circuit, the gate-source parasitic effect must be compensated, so as to improve the output power and efficiency of the power amplifier.
In order to overcome the defects of the prior art, the invention adopts the following technical scheme:
a power amplifier for improving a gate-source parasitic effect comprises an input matching circuit, a GaN HEMT power amplifier tube, an output matching circuit, a bias circuit and a gate-source parasitic compensation circuit, wherein the gate-source parasitic compensation circuit is connected between the input matching circuit and the GaN HEMT power amplifier tube in series and is used for compensating the gate-source parasitic effect;
the gate-source parasitic compensation circuit adopts a microstrip line structure and comprises a first microstrip line TL1, a second microstrip line TL2 and a third microstrip line TL3, wherein one end of the third microstrip line TL3 is connected with the output end of the input matching network, the other end of the third microstrip line TL3 is connected with one end of a first microstrip line TL1 and one end of a second microstrip line TL2, and the other end of the first microstrip line TL1 is connected with the grid electrode of the GaN HEMT power amplifier tube and is connected with a bias circuit; the other end of the second microstrip line TL2 is open-circuited.
Preferably, the output matching circuit is used for performing conjugate matching on the load impedance of the GaN HEMT obtained by the load traction system.
Preferably, the input matching circuit is used for performing conjugate matching on the source impedance of the GaN HEMT obtained by the source pulling system.
Preferably, the bias circuit is used for isolating direct current signals and radio frequency signals.
Preferably, the first microstrip line TL1 is used for compensating a gate parasitic inductance L caused by packaging of a GaN HEMT power amplifier tubegAnd parasitic resistance Rg(ii) a The second microstrip line TL2 and the third microstrip line TL3 are used for compensating the parasitic capacitance C of the grid source electrode of the GaN HEMT power amplifier tubegs。
Compared with the prior art, the power amplifier for improving the gate-source parasitic effect has the advantages that the gate-source parasitic compensation circuit is formed by the microstrip lines TL1, TL2 and TL3, the influence of input harmonic waves generated by the gate-source parasitic effect on the whole circuit is reduced, and the output power and the efficiency of the power amplifier are further improved.
Drawings
Fig. 1 is an equivalent diagram of a conventional GaN HEMT.
Fig. 2 is an equivalent diagram of a GaN HEMT in the present invention.
FIG. 3 is a schematic diagram of an improvement of the gate-source parasitic effect of a GaN HEMT according to the present invention.
Fig. 4 is a schematic structural view of the present invention for improving the gate-source parasitic effect of the GaN HEMT by using microstrip lines.
Fig. 5 is a schematic diagram of the overall structure of a power amplifier for improving the gate-source parasitic effect of a GaN HEMT according to the present invention.
Fig. 6 is a graph comparing the front and back drain efficiencies of a power amplifier incorporating a gate-source parasitic compensation circuit.
FIG. 7 is a graph comparing the output power of a power amplifier before and after adding a gate-source parasitic compensation circuit
Detailed Description
The following are specific embodiments of the present invention and are further described with reference to the drawings, but the present invention is not limited to these embodiments.
In view of the defects of the prior art, the applicant has conducted intensive research on the structure of the GaN HEMT in the prior art, and referring to fig. 1, an equivalent diagram of a conventional GaN HEMT is shown, and only the parasitic effect (parasitic capacitance C) of the drain and source electrodes is generally considered in the prior artdsThe impact on the circuit).
However, the applicant found in the research that, in fact, the gate-source parasitic effect has a large influence on the circuit, and the conventional power amplifier often ignores the influence of the gate-source parasitic effect, so that the output power and the efficiency of the power amplifier cannot be further improved. Therefore, the applicant carries out the optimization design of the equivalent diagram of the GaN HEMT, and the equivalent diagram is shown in fig. 2, which is a model diagram of the novel GaN HEMT proposed by the application, wherein model elements comprise a parasitic element and an intrinsic element, the intrinsic element is related to the bias voltage of the device, and the parasitic element is related to the material property and the physical structure of the device and is not related to the applied bias voltage. Since the drain-source parasitic effect has a direct effect on the power amplifier, the drain-source parasitic effect is usually considered, and the gate-source parasitic effect is ignored. However, due to the influence of the gate-source parasitic effect, the gate of the GaN HEMT has input harmonics, and the GaN HEMT is an active nonlinear device, and the input harmonics passing through the transistor are amplified, so that the direct-current power is consumed, and the output power and the efficiency of the power amplifier are reduced.
As can be seen from fig. 2, the gate parasitic effect is mainly caused by the gate-source capacitance CgsAnd gate parasitic inductance LgAnd parasitic resistance Rg. Wherein the gate source capacitance CgsThe calculation formula of (a) is as follows:
wherein epsilon is the dielectric constant of the GaN material, and d is the equivalent depletion depth.
Parasitic inductance L of gridgAnd parasitic resistance RgThe calculation formula of (a) is as follows:
wherein m is the grid index, u0Is the magnetic permeability in vacuum and ρ is the electrical conductivity of the gate metal.
Referring to FIG. 3, a schematic diagram of an improved GaN HEMT gate-source parasitic effect according to the present invention is shown, in which a gate-source parasitic compensation circuit is added to the gate of the GaN HEMT, wherein a compensation capacitor C is providedcomUsed for compensating the gate parasitic inductance L caused by transistor packaginggAnd parasitic resistance RgCompensating inductance LcomParasitic capacitance C for compensating gate sourcegsAdding a compensation capacitor CcomAnd gate parasitic inductance LgAnd parasitic resistance RgSo that the circuit is in resonance, so as to compensate the capacitance CcomThe calculation formula is as follows:
added compensation capacitor LcomParasitic capacitance C of gate sourcegsMake the circuit in resonance state, so the compensation capacitor LcomThe calculation formula is as follows:
considering that the parasitic effect can be generated by adding the capacitance inductance, the capacitance inductance is converted into a microstrip line form in the gate-source parasitic effect compensation circuit.
The transfer matrix [ A ] from the two-port network can be realized by replacing lumped-parameter inductor or capacitor with a transmission line under certain conditionsT]To obtain the characteristic impedance Z of the microstrip line0Higher time, transmission line transfer matrix [ AT]21Close to zero, the transfer matrix of the transmission line has a transfer matrix corresponding to the series inductance when the characteristic impedance Z of the microstrip line is zero0At lower times, the transmission line shifts the matrix [ A ]T]12Near zero, the transfer matrix of the transmission line has a transfer matrix that is identical to the shunt capacitance, so that a short section of high impedance transmission line can be equated to a series inductance and a short section of low impedance transmission line can be equated to a shunt capacitance.
That is, the length of the transmission line is calculated by the following equation:
the width of the transmission line is related to the characteristic impedance, and the calculation formula is as follows:
wherein the impedance η of the free space wave0120 pi, the coefficient u is W/h, W is the microstrip line width, h is the dielectric thickness,
the capacitance inductance in the gate-source parasitic effect compensation circuit can be converted into a microstrip line form through the formula.
Referring to fig. 4, a schematic structural diagram of using a microstrip line to improve the gate-source parasitic effect of the GaN HEMT is shown, wherein the microstrip line TL1 compensates for the gate parasitic inductance L caused by the packaging of the power amplifier transistorgAnd parasitic resistance RgMicrostrip lines TL2 and TL3 are used for compensating parasitic capacitance C of a grid source electrodegs。
In order to overcome the defects of the prior art, referring to fig. 5, a schematic block diagram of a power amplifier for improving the gate-source parasitic effect of a GaN HEMT power amplifier is shown, and the power amplifier comprises an input matching circuit, a GaN HEMT power amplifier, an output matching circuit, a bias circuit and a gate-source parasitic compensation circuit, wherein the gate-source parasitic compensation circuit is connected in series between the input matching circuit and the GaN HEMT power amplifier and is used for compensating the gate-source parasitic effect.
The gate-source parasitic compensation circuit is designed through microstrip lines and comprises a first microstrip line TL1, a second microstrip line TL2 and a third microstrip line TL3, wherein one end of the third microstrip line TL3 is connected with the output end of the input matching network, the other end of the third microstrip line TL3 is connected with one end of a first microstrip line TL1 and one end of a second microstrip line TL2, and the other end of the first microstrip line TL1 is connected with the grid electrode of the GaN HEMT power amplifier tube and is connected with a bias circuit; the other end of the second microstrip line TL2 is open-circuited. In the prior art, only the influence of parasitic capacitance is usually considered, and the gate-source parasitic compensation circuit provided by the invention not only considers the influence of parasitic capacitance, but also solves the influence of parasitic resistance and parasitic inductance. The first microstrip line TL1 is used for compensating the gate parasitic inductance L caused by packaging the power amplifier transistorgAnd parasitic resistance RgA second microstrip line TL2 and a second microstrip line TL2Three microstrip lines TL3 for compensating parasitic capacitance C of gate sourcegs。
The output matching circuit is used for performing conjugate matching on the load impedance of the GaN HEMT obtained by the load traction system.
The input matching circuit is used for performing conjugate matching on the source impedance of the GaN HEMT obtained by the source traction system.
The bias circuit is formed by adding 1/4 wavelength impedance transformation lines to the DC input end, and can play a role in isolating DC signals and radio frequency signals.
The power amplifier load impedance is 50 ohms.
By adopting the technical scheme, the gate-source parasitic compensation circuit is arranged at the input end, so that the influence of input harmonic waves generated by the gate-source parasitic effect on the whole circuit is reduced, and the output power and the efficiency of the power amplifier are further improved.
Referring to fig. 6 and 7, which are comparative test charts between the technical scheme of the present invention and the prior art, it can be seen that, in a frequency band, when a gate-source parasitic compensation circuit is not added, the drain efficiency is 46% -62%, when a gate-source parasitic compensation circuit is added, the drain efficiency is 65% -72%, and the output power is 40.2 dBm-41.5 dBm, and after the gate-source parasitic compensation circuit is added, the drain efficiency and the output power are both increased by a certain extent, which indicates that the gate-source parasitic effect has a large influence on the circuit.
The invention relates to a power amplifier for improving the grid-source parasitic effect of a GaN HEMT power amplifier tube, which is realized by the following steps:
the method comprises the following steps: debugging a standard power amplifier as an input-output matching circuit;
step two: the debugging grid source parasitic effect compensation circuit is characterized in that a series microstrip line TL1 is used for compensating grid parasitic inductance L caused by packaging a power amplifier transistorgAnd parasitic resistance RgMicrostrip lines TL2 and TL3 are used for compensating parasitic capacitance C of a grid source electrodegsThe output power and the efficiency of the transistor are improved;
step three: the debugged power amplifier and the gate-source parasitic effect compensation circuit are combined to form the power amplifier for improving the gate-source parasitic effect.
Compared with the prior art, the invention reduces the influence of input harmonic waves generated by the grid-source parasitic effect on the whole circuit and improves the output power and the efficiency of the power amplifier by improving the grid-source parasitic effect of the traditional power amplifier.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
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