CN107623511A - A kind of vehicle solid-state relay for including NMOS tube with overcurrent protection - Google Patents
A kind of vehicle solid-state relay for including NMOS tube with overcurrent protection Download PDFInfo
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- CN107623511A CN107623511A CN201610553973.7A CN201610553973A CN107623511A CN 107623511 A CN107623511 A CN 107623511A CN 201610553973 A CN201610553973 A CN 201610553973A CN 107623511 A CN107623511 A CN 107623511A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 32
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Abstract
A kind of vehicle solid-state relay for including NMOS tube with overcurrent protection,The positive pole of the drain electrode connection vehicle power supply of NMOS tube,Source electrode connection load,Grid connects booster circuit,Solid-state relay also includes the metal-oxide-semiconductor control circuit being connected with the booster circuit,Metal-oxide-semiconductor control circuit is powered by solid-state relay control terminal power supply,Solid-state relay also includes the current foldback circuit being connected with the metal-oxide-semiconductor control circuit,The current foldback circuit is with the NMOS tube in drain electrode and sources connected in parallel,After solid-state relay control terminal power supply electrifying,Metal-oxide-semiconductor control circuit is by booster circuit driving NMOS tube conducting,The effect of current foldback circuit is,When NMOS tube is in over-current state,Detect pressure drop of the conducting resistance under overcurrent condition of NMOS tube in itself,When overload current is greater than threshold value,Close metal-oxide-semiconductor control circuit,NMOS tube is turned off to realize the overcurrent protection to the NMOS tube.
Description
Technical field
It is more particularly to a kind of to include the automobile-used solid of NMOS tube with overcurrent protection the invention belongs to technical field of automotive electronics
State relay.
Background technology
It is a kind of universal technology to be controlled on existing automobile using electromagnetic relay as switch, yet with machinery
The limitation of the service life of material and structure in itself, in the life cycle management of vehicle, electromagnetic relay breaks down and must not
Situation about being changed without is unavoidable.Meanwhile the sound that electromagnetic relay is sent when adhesive, it is high-grade for some
Car, and it is unwelcome.In this respect, solid-state relay has the advantage of uniqueness.
Application No. CN200410041985.9 patent application, disclose " method of DC solid power control, its spy
Sign is：Computer sends " open-minded " or " shut-off " digital controlled signal, and this digital controlled signal is turned by external interface circuit
The driving switch signal of power MOSFET module is turned to, driving power module MOSFET is switched on or off, so that whole main line
Road is switched on or off；DC load input power MOSFET modules, voltage detecting/amplitude limiter circuit inside power MOSFET module
After DC load amplitude limit, output direct current to current detecting/amplitude limiter circuit, the voltage signal detected is passed through into external interface electricity
Road feeds back to main control computer, and cut-off signals caused by overvoltage are sent into MOSFET drive circuits；Power MOSFET module
After internal current detecting/amplitude limiter circuit is to direct current amplitude limit, direct current is exported, and the current signal detected is connect by outside
Mouthful electronic feedback to main control computer, while by cut-off signals feeding MOSFET drive circuits caused by excessively stream ".
In practice, if existing solid-state relay is used for automobile controlling switch, circuit redundancy is complicated, and cost is excessively high
It is high, hinder the promoting the use of on automobile using MOSFET solid-state relay.
The content of the invention
It is an object of the invention to provide a kind of vehicle solid-state relay for including NMOS tube with overcurrent protection.
The technical scheme is that a kind of vehicle solid-state relay for including NMOS tube with overcurrent protection, including
The positive pole of the drain electrode connection vehicle power supply of NMOS tube, source electrode connection load, grid connection booster circuit,
Solid-state relay also includes the metal-oxide-semiconductor control circuit being connected with the booster circuit, and metal-oxide-semiconductor control circuit is by solid-state
The power supply power supply of Control end,
Solid-state relay also includes the current foldback circuit being connected with the metal-oxide-semiconductor control circuit, the current foldback circuit
With the NMOS tube in drain electrode and sources connected in parallel,
After solid-state relay control terminal power supply electrifying, metal-oxide-semiconductor control circuit turns on by booster circuit driving NMOS tube,
The effect of current foldback circuit is, when NMOS tube is in over-current state, the conducting resistance of detection NMOS tube in itself
Pressure drop under overcurrent condition, when overload current is greater than threshold value, trigger protection function, metal-oxide-semiconductor control circuit is closed, turn off institute
NMOS tube is stated to realize the overcurrent protection to the NMOS tube.
Described booster circuit includes pwm circuit, and the output end of the pwm circuit is sequentially connected electric capacity C3 and diode D1,
Diode D1 negative electrode connects the grid of the NMOS tube,
Meanwhile diode D1 negative electrode is grounded through electric capacity C4, diode D1 anode connection diode D2 negative electrode, two poles
Pipe D2 anode connecting triode Q10 emitter stage,
Triode Q10 base stage connects the metal-oxide-semiconductor control circuit, and when triode Q10 is turned on, the NMOS tube is in height
Side turns on.
The current foldback circuit includes triode Q9, and triode Q9 emitter stage connects the leakage of the NMOS tube through resistance
Pole, triode Q9 base stage connecting triode Q11 colelctor electrode, triode Q11 base stage connect solid-state relay control through resistance
End power supply processed,
Base stage of the triode Q9 colelctor electrode through resistance connecting triode Q13.
The metal-oxide-semiconductor control circuit includes triode Q12, triode Q13 colelctor electrode connecting triode Q12 base stage.
Vehicle power supply, the positive pole of automobile storage battery, term code name KL30 or BAT.
The solid-state relay of the present invention, make use of pressure drop of the conducting resistance of NMOS tube under overcurrent condition in itself, passes through
The pressure drop under overcurrent condition is detected, realizes the overcurrent protection to NMOS tube.Meanwhile the present invention is realized in solid-state relay
NMOS tube flash drives, and has adapted to the requirement of vehicle switch.
Brief description of the drawings
Fig. 1 is the schematic block circuit diagram of the present invention.
Fig. 2 is the circuit diagram in the embodiment of the present invention.
Embodiment
As shown in figure 1, because N-channel MOS pipe is often suitable only for doing low side driving, doing flash driving if desired needs one
Individual booster circuit.After electricity on coil_VCC (solid-state relay control terminal power supply), metal-oxide-semiconductor control circuit driving be operated in by
Booster circuit turns on metal-oxide-semiconductor Q1, normal output.
After S1 conductings are switched, output loading moment increases, and metal-oxide-semiconductor is in the excessively stream stage.Current foldback circuit utilizes MOS
Pressure drops of the RDS (conducting resistance of metal-oxide-semiconductor, usually several milliohms to hundreds of milliohms) of pipe under overcurrent condition itself, works as electric current
Greatly to certain threshold value, trigger protection circuit closes metal-oxide-semiconductor control circuit shut-off metal-oxide-semiconductor to realize metal-oxide-semiconductor Q1 overcurrent protection.This
Individual switch S1 is used for simulating the situation of excessively stream, and S1 conductings can be regarded as loading and go up the resistance of a very little, that is, increase
A very big load current is added.
As shown in Fig. 2 the NMOS tube Q8 booster circuit course of work is：
After electricity on coil_VCC, PWM circuit produce pwm signal, by electric capacity C3 and diode D1, due to electric capacity
The voltage at both ends can not be mutated, and V3=V1+V2-Vd Vd are D1, D2 conducting voltage.Vo=V1+V2-2Vd.
The dutycycle of pwm circuit is adjusted, and causes C4 electric capacity ceaselessly impulse electricity.Because metal-oxide-semiconductor is voltage-type device, only
Need to consume faint electric current, so the voltage at Vo ends is Vo=V1+V2-2Vd sawtooth waveform.
When triode Q10 is turned on, V1, V2 are equal to supply voltage.Assuming that voltage is 12V, then Vo is approximately equal to
22.6V or so zig-zag.So NMOS tube Q8 can just turn in flash.If coil_VCC is invalid or triode
Q10 can not be turned on, then V1=0V, then Vo will be less than supply voltage, and NMOS tube Q8 will be unable to turn on.
Course of normal operation is：
1) after coil_VCC input high levels are effective, Q12 triode ONs to ground, PNP triode Q10, which is turned on, to be caused
PMOS Q8 is turned on, and loads normal power-up
2) after coil_VCC input high levels, Q11 triode ONs, Q11 C poles and E poles is equivalent to short circuit.Work as load
During normal work, pressure drop (RDS*I) very little of metal-oxide-semiconductor Q8 both ends (between network label S1 and S2), triode Q9 can not be obtained
Enough bias voltages, Q9 are in cut-off state, then triode Q13 is also at cut-off state.
The operation principle of current foldback circuit is：
When switch S4 is switched to ground, metal-oxide-semiconductor Q8 is in over-current state.Metal-oxide-semiconductor both ends metal-oxide-semiconductor Q8 both ends (network label S1
Between S2) pressure drop (RDS*I) become big, triode Q9 obtains enough bias voltage conductings so that T3 networks pass through R27
Input high level.Triode Q13 is turned on so that triode Q12 B poles level is pulled low to ground, triode Q12 cut-offs, triode
Q10 ends.Metal-oxide-semiconductor Q8 is closed, and realizes overcurrent protection.Switch S4 is used for simulating the situation of excessively stream, and S4 conductings are considered as
It is to load and gone up the resistance of a very little, that is, adds a very big load current.
Claims (4)
- A kind of 1. vehicle solid-state relay for including NMOS tube with overcurrent protection, it is characterised in that the drain electrode including NMOS tube The positive pole of vehicle power supply, source electrode connection load are connected, grid connects booster circuit, and solid-state relay also includes and the liter The metal-oxide-semiconductor control circuit of volt circuit connection, metal-oxide-semiconductor control circuit are powered by solid-state relay control terminal power supply,Solid-state relay also includes the current foldback circuit being connected with the metal-oxide-semiconductor control circuit, the current foldback circuit and institute NMOS tube is stated in drain electrode and sources connected in parallel,After solid-state relay control terminal power supply electrifying, metal-oxide-semiconductor control circuit turns on by booster circuit driving NMOS tube,The effect of current foldback circuit is, when NMOS tube is in over-current state, the conducting resistance of detection NMOS tube in itself is in mistake Pressure drop in the case of stream, when overload current is greater than threshold value, trigger protection function, metal-oxide-semiconductor control circuit is closed, described in shut-off NMOS tube realizes the overcurrent protection to the NMOS tube.
- 2. the vehicle solid-state relay for including NMOS tube with overcurrent protection as claimed in claim 1, it is characterised in that described Booster circuit include pwm circuit, the output end of the pwm circuit is sequentially connected electric capacity C3 and diode D1, diode D1 the moon Pole connects the grid of the NMOS tube,Meanwhile diode D1 negative electrode is grounded through electric capacity C4, diode D1 anode connection diode D2 negative electrode, diode D2 Anode connecting triode Q10 emitter stage,Triode Q10 base stage connects the metal-oxide-semiconductor control circuit, and when triode Q10 is turned on, the NMOS tube is led in flash It is logical.
- 3. the vehicle solid-state relay for including NMOS tube with overcurrent protection as claimed in claim 1, it is characterised in that described Current foldback circuit includes triode Q9, and triode Q9 emitter stage connects the drain electrode of the NMOS tube, triode Q9 through resistance Base stage connecting triode Q11 colelctor electrode, triode Q11 base stage connects solid-state relay control terminal power supply through resistance,Base stage of the triode Q9 colelctor electrode through resistance connecting triode Q13.
- 4. the vehicle solid-state relay for including NMOS tube with overcurrent protection as claimed in claim 3, it is characterised in that described Metal-oxide-semiconductor control circuit includes triode Q12, triode Q13 colelctor electrode connecting triode Q12 base stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610553973.7A CN107623511B (en) | 2016-07-14 | 2016-07-14 | Vehicle solid-state relay with overcurrent protection and NMOS (N-channel metal oxide semiconductor) tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610553973.7A CN107623511B (en) | 2016-07-14 | 2016-07-14 | Vehicle solid-state relay with overcurrent protection and NMOS (N-channel metal oxide semiconductor) tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107623511A true CN107623511A (en) | 2018-01-23 |
| CN107623511B CN107623511B (en) | 2020-10-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610553973.7A Active CN107623511B (en) | 2016-07-14 | 2016-07-14 | Vehicle solid-state relay with overcurrent protection and NMOS (N-channel metal oxide semiconductor) tube |
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| Country | Link |
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| CN (1) | CN107623511B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108879591A (en) * | 2018-07-18 | 2018-11-23 | 深圳市沃特沃德股份有限公司 | High current power supply protection circuit |
| CN109039313A (en) * | 2018-08-02 | 2018-12-18 | 上海沪工汽车电器有限公司 | Solid-state relay |
| CN110365322A (en) * | 2019-07-01 | 2019-10-22 | 中车青岛四方机车车辆股份有限公司 | A digital output board |
| CN113285515A (en) * | 2021-06-18 | 2021-08-20 | 东莞新能安科技有限公司 | Switch driving circuit, battery control circuit, power management system and battery pack |
| CN114362102A (en) * | 2021-11-26 | 2022-04-15 | 浙江捷昌线性驱动科技股份有限公司 | Motor protection unit based on MOS characteristic |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020118502A1 (en) * | 2001-02-28 | 2002-08-29 | Yazaki Corporation | In-vehicle electric load drive/controlling device |
| CN102420413A (en) * | 2011-12-29 | 2012-04-18 | 西安科技大学 | Self-recovery stop type protection circuit for low-voltage and high-power safety barrier |
| CN202930903U (en) * | 2012-11-21 | 2013-05-08 | 重庆西南集成电路设计有限责任公司 | Overvoltage and overcurrent protection circuit |
| CN203800576U (en) * | 2014-04-24 | 2014-08-27 | 南京华士电子科技有限公司 | Protection circuit of overcurrent and under current for MOS transistor output |
-
2016
- 2016-07-14 CN CN201610553973.7A patent/CN107623511B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020118502A1 (en) * | 2001-02-28 | 2002-08-29 | Yazaki Corporation | In-vehicle electric load drive/controlling device |
| CN102420413A (en) * | 2011-12-29 | 2012-04-18 | 西安科技大学 | Self-recovery stop type protection circuit for low-voltage and high-power safety barrier |
| CN202930903U (en) * | 2012-11-21 | 2013-05-08 | 重庆西南集成电路设计有限责任公司 | Overvoltage and overcurrent protection circuit |
| CN203800576U (en) * | 2014-04-24 | 2014-08-27 | 南京华士电子科技有限公司 | Protection circuit of overcurrent and under current for MOS transistor output |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108879591A (en) * | 2018-07-18 | 2018-11-23 | 深圳市沃特沃德股份有限公司 | High current power supply protection circuit |
| CN109039313A (en) * | 2018-08-02 | 2018-12-18 | 上海沪工汽车电器有限公司 | Solid-state relay |
| CN110365322A (en) * | 2019-07-01 | 2019-10-22 | 中车青岛四方机车车辆股份有限公司 | A digital output board |
| CN113285515A (en) * | 2021-06-18 | 2021-08-20 | 东莞新能安科技有限公司 | Switch driving circuit, battery control circuit, power management system and battery pack |
| CN114362102A (en) * | 2021-11-26 | 2022-04-15 | 浙江捷昌线性驱动科技股份有限公司 | Motor protection unit based on MOS characteristic |
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| Publication number | Publication date |
|---|---|
| CN107623511B (en) | 2020-10-30 |
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