CN107783579A - circuit - Google Patents
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- CN107783579A CN107783579A CN201610717974.0A CN201610717974A CN107783579A CN 107783579 A CN107783579 A CN 107783579A CN 201610717974 A CN201610717974 A CN 201610717974A CN 107783579 A CN107783579 A CN 107783579A
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- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
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- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
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Abstract
Description
技术领域technical field
本申请涉及电子电路,并且在具体实施例中涉及用于从能够变化的直流电压为负载供电的电路。The present application relates to electronic circuits and, in particular embodiments, to circuits for powering a load from a variable DC voltage.
背景技术Background technique
当将要在固定直流电压下为负载供电时,往往使用电压设置元件,该电压设置元件典型地为与负载并联连接的齐纳二极管。然后将电流源与这一并联组合串联连接并且用直流电压为该组件供电。齐纳二极管具有限制(设置)跨负载的电压的功能。电流源具有吸收流经负载以及流经齐纳二极管的电流的功能。When a load is to be powered at a fixed DC voltage, a voltage setting element is often used, typically a Zener diode connected in parallel with the load. A current source is then connected in series with this parallel combination and powers the assembly with a DC voltage. Zener diodes have the function of limiting (setting) the voltage across the load. The current source has the function of sinking the current flowing through the load as well as through the Zener diode.
对于固定负载(恒定功耗)而言,根据这一电流确定电流源的大小以保证齐纳二极管永久处于雪崩(作为电压限制器活动)。For a fixed load (constant power dissipation), the current source is sized from this current to keep the Zener diode permanently in avalanche (acting as a voltage limiter).
然而对于具有能够变化的功耗的负载而言,则必须根据负载的最大功耗确定电流源的大小。当负载未牵引(draw)这一最大电流时,这生成不必要的功耗。However, for loads with variable power consumption, the current source must be sized according to the maximum power consumption of the load. This generates unnecessary power dissipation when the load is not drawing this maximum current.
发明内容Contents of the invention
一个实施例克服用于为负载供电的常见电路的所有或者部分问题。One embodiment overcomes all or some of the problems of common circuits used to power a load.
另一实施例优化电源电路的功耗并且更具体而言降低其损耗。Another embodiment optimizes the power consumption of the power supply circuit and more specifically reduces its losses.
一个实施例提供一种无需修改待供电的负载的解决方案。One embodiment provides a solution that does not require modification of the load to be powered.
为了实现上述目的,本申请的实施例提供一种电路,包括:电流源,被配置为与负载在第一直流电压的应用的两个端子之间串联连接;被耦合以限制跨所述负载的电压的元件;以及控制电路,被配置为利用在所述元件中流动的电流来控制所述电流源中的电流的值。In order to achieve the above object, an embodiment of the present application provides a circuit, comprising: a current source configured to be connected in series with a load between two terminals of the application of a first DC voltage; coupled to limit the current across the load an element of voltage; and a control circuit configured to use the current flowing in the element to control the value of the current in the current source.
优选地,所述元件包括连接至在所述负载与所述电流源之间的接合点的齐纳二极管。Preferably, said element comprises a Zener diode connected to a junction between said load and said current source.
优选地,所述电路包括第一MOS晶体管,所述第一MOS晶体管被装配为二极管和在第二MOS晶体管上的电流镜,所述第二晶体管与第三晶体管在所述第一直流电压的应用的所述端子之间串联,并且所述第三晶体管被装配为二极管和在连接至所述电流源的控制端子的第四晶体管上的电流镜。Preferably, said circuit comprises a first MOS transistor configured as a diode and a current mirror on a second MOS transistor, said second transistor and a third transistor at said first DC voltage The terminals of the application are connected in series and the third transistor is assembled as a diode and a current mirror on a fourth transistor connected to the control terminal of the current source.
优选地,所述元件包括连接至在所述负载与所述电流源之间的接合点的齐纳二极管。Preferably, said element comprises a Zener diode connected to a junction between said load and said current source.
优选地,所述齐纳二极管与所述第一晶体管串联。Preferably, the Zener diode is connected in series with the first transistor.
优选地,所述元件在所述负载内部并且控制所述第一晶体管。Preferably, said element is internal to said load and controls said first transistor.
优选地,所述第四晶体管与电阻元件在第二直流电压的应用的两个端子之间串联。Preferably, said fourth transistor is connected in series with the resistive element between the two terminals of the application of the second direct voltage.
优选地,所述电流源由MOS晶体管形成。Preferably, said current source is formed by MOS transistors.
优选地,所述负载包括电荷泵电路。Preferably, the load includes a charge pump circuit.
本申请的实施例还提供另一种电路,包括:第一参考电压端子;第二参考电压端子;负载,被耦合在所述第一参考电压端子与所述第二参考电压端子之间;以及可变电流源,与所述负载在所述第一参考电压端子和所述第二参考电压端子之间串联耦合,所述可变电流源被配置为提供具有根据由所述负载消耗的功率的幅度的电流。Embodiments of the present application also provide another circuit, including: a first reference voltage terminal; a second reference voltage terminal; a load coupled between the first reference voltage terminal and the second reference voltage terminal; and a variable current source coupled in series with the load between the first reference voltage terminal and the second reference voltage terminal, the variable current source being configured to provide magnitude of the current.
优选地,所述第一参考电压端子包括电池端子,并且所述第二参考电压端子包括接地端子。Preferably, the first reference voltage terminal comprises a battery terminal, and the second reference voltage terminal comprises a ground terminal.
优选地,还包括被耦合至所述负载以便限制跨所述负载的电压的元件。Preferably, an element coupled to said load to limit the voltage across said load is also included.
优选地,所述元件包括连接至在所述负载与所述电流源之间的接合点的齐纳二极管。Preferably, said element comprises a Zener diode connected to a junction between said load and said current source.
优选地,所述元件在所述负载内部。Preferably said element is internal to said load.
优选地,所述可变电流源包括:Preferably, the variable current source includes:
晶体管,其电流路径与所述负载在所述第一参考电压端子和所述第二参考电压端子之间串联耦合;以及控制电路,其控制输出被耦合至所述晶体管的控制端子。a transistor with a current path coupled in series with the load between the first reference voltage terminal and the second reference voltage terminal; and a control circuit with a control output coupled to the control terminal of the transistor.
优选地,所述控制电路包括第一MOS晶体管、第二MOS晶体管、第三MOS晶体管和第四MOS晶体管,所述第一MOS晶体管被连接为二极管和在所述第二MOS晶体管上的电流镜,所述第二晶体管与所述第三晶体管在所述第一参考电压端子和所述第二参考电压端子之间串联,并且所述第三晶体管被连接为二极管和在所述第四晶体管上的电流镜,所述第四晶体管被耦合至所述晶体管的所述控制端子。Preferably, the control circuit comprises a first MOS transistor, a second MOS transistor, a third MOS transistor and a fourth MOS transistor, the first MOS transistor being connected as a diode and a current mirror on the second MOS transistor , the second transistor is connected in series with the third transistor between the first reference voltage terminal and the second reference voltage terminal, and the third transistor is connected as a diode and across the fourth transistor The fourth transistor is coupled to the control terminal of the transistor.
优选地,还包括被耦合在所述第一MOS晶体管与所述负载和所述电流源之间的接合点之间的电压限制元件。Preferably, further comprising a voltage limiting element coupled between said first MOS transistor and a junction between said load and said current source.
优选地,所述电压限制元件包括齐纳二极管。Preferably, said voltage limiting element comprises a Zener diode.
优选地,还包括被耦合在所述第四晶体管与直流电压端子之间的电阻元件。Preferably, a resistive element coupled between said fourth transistor and a direct voltage terminal is also included.
优选地,所述第一参考电压端子和所述直流电压端子相对于所述第二参考电压端子承载不同电压。Preferably, said first reference voltage terminal and said DC voltage terminal carry different voltages relative to said second reference voltage terminal.
优选地,所述电流源由MOS晶体管形成。Preferably, said current source is formed by MOS transistors.
优选地,所述负载包括电荷泵电路。Preferably, the load includes a charge pump circuit.
本申请的实施例还提供又一种电路,包括:Embodiments of the present application also provide another circuit, including:
第一参考电压端子;a first reference voltage terminal;
第二参考电压端子;中间端子;a second reference voltage terminal; an intermediate terminal;
第一P沟道晶体管,其电流路径被耦合在所述第一参考电压端子和所述中间端子之间,所述第一P沟道晶体管被耦合为二极管;电压限制元件,与所述第一P沟道晶体管的所述电流路径在所述第一参考电压端子和所述中间端子之间串联耦合;第二P沟道晶体管,其电流路径被耦合在所述第一参考电压端子和所述第二参考电压端子之间,所述第二P沟道晶体管具有被耦合至所述第一P沟道晶体管的控制端子的控制端子;第一N沟道晶体管,其电流路径与所述第二P沟道晶体管的所述电流路径在所述第一参考电压端子和所述第二参考电压端子之间串联耦合,所述第一N沟道晶体管被耦合为二极管;第二N沟道晶体管,其控制端子被耦合至所述第一N沟道晶体管的控制端子,所述第二N沟道晶体管具有与电阻元件在所述第二参考电压端子和第三参考电压端子之间串联耦合的电流路径;以及电流源晶体管,其电流路径被耦合在所述中间端子和所述第二参考电压端子之间,所述电流源晶体管具有被耦合至所述第二N沟道晶体管的控制端子。a first P-channel transistor having a current path coupled between said first reference voltage terminal and said intermediate terminal, said first P-channel transistor being coupled as a diode; a voltage limiting element connected to said first The current path of a P-channel transistor is coupled in series between the first reference voltage terminal and the intermediate terminal; the current path of a second P-channel transistor is coupled between the first reference voltage terminal and the Between second reference voltage terminals, the second P-channel transistor has a control terminal coupled to the control terminal of the first P-channel transistor; the first N-channel transistor has a current path connected to the second The current path of a P-channel transistor is coupled in series between the first reference voltage terminal and the second reference voltage terminal, the first N-channel transistor is coupled as a diode; a second N-channel transistor, Its control terminal is coupled to the control terminal of said first N-channel transistor, said second N-channel transistor having a current coupled in series with a resistive element between said second reference voltage terminal and a third reference voltage terminal. and a current source transistor with a current path coupled between the intermediate terminal and the second reference voltage terminal, the current source transistor having a control terminal coupled to the second N-channel transistor.
优选地,所述电压限制元件包括齐纳二极管。Preferably, said voltage limiting element comprises a Zener diode.
优选地,还包括被耦合在所述第一参考电压端子和所述中间端子之间的负载。Advantageously, further comprising a load coupled between said first reference voltage terminal and said intermediate terminal.
所讨论的实施例的一个优势在于其优化实现为负载供电的电流源的功耗。One advantage of the discussed embodiment is that it optimizes the power consumption of a current source powering a load.
另一优势是该调整不需要直接测量负载功耗或者这一负载的输出电流。所描述的实施例的实施方式因此不需要修改待供电的负载。Another advantage is that this adjustment does not require direct measurement of load power consumption or the output current of this load. Implementation of the described embodiments thus does not require modification of the load to be powered.
在具体实施例的以下非限制性描述中将结合附图更详细地讨论前述和其它特征和优势。The foregoing and other features and advantages will be discussed in more detail in the following non-limiting description of specific embodiments in conjunction with the accompanying drawings.
附图说明Description of drawings
为了更全面理解本申请以及其优势,现在结合附图参考以下描述,在附图中:For a more complete understanding of the present application and its advantages, reference is now made to the following description taken in conjunction with the accompanying drawings, in which:
图1示意性示出用于为负载供电的电路的常见示例;Figure 1 schematically shows a common example of a circuit for powering a load;
图2是用于为负载供电的电路的实施例的功能框图;Figure 2 is a functional block diagram of an embodiment of a circuit for powering a load;
图3示出用于以浮动电势为负载供电的实施例的电路图;以及Figure 3 shows a circuit diagram for an embodiment for powering a load with a floating potential; and
图4示出处于浮动电势的负载的示例。Figure 4 shows an example of a load at floating potential.
具体实施方式Detailed ways
在不同附图中利用相同参考标号标出相同元件。为清楚起见,仅示出并且将详述对于理解所描述的实施例有用的那些元件。具体而言,此类实施例与旨在与电流源串联的任何类型的负载相兼容。将要描述的实施例的应用的示例针对由电荷泵或者电荷转移电路形成的负载。在此类电路中,功耗根据由电荷泵供电的元件的功耗而变化。The same elements are labeled with the same reference numerals in different figures. For clarity, only those elements that are useful for understanding the described embodiments are shown and will be detailed. In particular, such embodiments are compatible with any type of load intended to be connected in series with a current source. An example of application of the embodiment to be described is directed to a load formed by a charge pump or a charge transfer circuit. In such circuits, the power consumption varies according to the power consumption of the components powered by the charge pump.
只要将要从能够变化的电压为负载供电以及期望借由齐纳二极管等设置其电源电压,就大体上会出现类似的问题。实际上,随后负载与电流源串联,该电流源产生处于浮动电势的节点。例如,这可以是参考除接地之外的电势的放大或者比较电路。Similar problems generally arise whenever a load is to be supplied from a variable voltage and it is desired to set its supply voltage by means of Zener diodes or the like. In effect, the load is then connected in series with a current source which creates a node at floating potential. For example, this could be an amplification or comparison circuit referenced to a potential other than ground.
图1示出用于用直流电压(例如,由电池递送的电压Vbat)为负载1(Q)供电并且具有可变功耗的电路的常见示例。待供电的电路(即负载1)与恒定电流源2在去往提供直流电压的源(电池)的连接的两个端子21和22之间串联连接。齐纳二极管3等与负载1并联连接。齐纳二极管3具有在负载和电流源2的接合点23这一侧上的阳极。Fig. 1 shows a common example of a circuit for powering a load 1 (Q) with a DC voltage (for example, the voltage Vbat delivered by a battery) and with variable power consumption. The circuit to be powered, ie the load 1 , is connected in series with a constant current source 2 between two terminals 21 and 22 of the connection to a source (battery) providing a direct voltage. Zener diode 3 and the like are connected in parallel to load 1 . Zener diode 3 has an anode on the side of junction 23 of load and current source 2 .
其操作原理如下。通常根据负载的不同功耗来确定电流源的大小以采样恒定电流Ibias以确保负载的操作。在图1的示例中,这一消耗取决于电流Iout,电流Iout可以由负载1提供。电流Ibias被选择为大于能够由负载1牵引的电流Ic的最大值,以确保齐纳二极管3的合适偏置。在相反的情况下,齐纳二极管3截止并且由齐纳二极管的阈值电压设置的跨负载1的电源电压下降。Its operating principle is as follows. Usually, the size of the current source is determined according to the different power consumption of the load to sample the constant current Ibias to ensure the operation of the load. In the example of FIG. 1 , this consumption depends on the current Iout, which can be supplied by the load 1 . The current Ibias is chosen to be greater than the maximum value of the current Ic that can be drawn by the load 1 to ensure proper biasing of the Zener diode 3 . In the opposite case, Zener diode 3 is turned off and the supply voltage across load 1 , set by the threshold voltage of the Zener diode, drops.
具体而言,此类电路旨在用于如下应用,在该应用中直流电压Vbat有变化的风险并且其中必须利用近似恒定的电压为负载供电。这证明对于齐纳二极管3或者用于设置电压阈值的另一部件的使用是正当的。In particular, such circuits are intended for applications in which there is a risk of variations in the direct voltage Vbat and in which the load must be supplied with an approximately constant voltage. This justifies the use of a Zener diode 3 or another component for setting the voltage threshold.
图1中的类型的电路的问题是总功耗独立于负载1的功耗。实际上,必须关于负载功耗的最差情况确定恒定电流源2的大小。这导致最大永久功耗,即使当负载不需要它的时候,过剩电流随后被齐纳二极管偏离。The problem with circuits of the type in Figure 1 is that the total power dissipation is independent of that of the load 1 . In practice, the constant current source 2 has to be sized with respect to the worst case of load power dissipation. This results in a maximum permanent power dissipation, even when the load does not require it, the excess current is then diverted by the zener diode.
图2是用于为负载1供电的电路的实施例的功能图。如之前那样,负载1与电流源4在直流电压Vbat的应用的两个端子21和22之间串联连接。然而,电流源4在此是可调电流源。电流源4中的电流I4的值取决于由电路5提供的控制信号CTRL,电路5将在节点21处的电压与在节点23处的电压加上齐纳二极管3的阈值电压进行比较。换而言之,比较器5关于由二极管3设置的电压检测跨负载1的电压的变化。FIG. 2 is a functional diagram of an embodiment of a circuit for powering a load 1 . As before, the load 1 is connected in series with the current source 4 between the two terminals 21 and 22 of the application of the direct voltage Vbat. However, the current source 4 is here an adjustable current source. The value of current I4 in current source 4 depends on control signal CTRL provided by circuit 5 , which compares the voltage at node 21 with the voltage at node 23 plus the threshold voltage of Zener diode 3 . In other words, the comparator 5 detects a change in the voltage across the load 1 with respect to the voltage set by the diode 3 .
其目的是根据负载功耗来调节由电流源4牵引的电流的值。Its purpose is to adjust the value of the current drawn by the current source 4 according to the power consumption of the load.
可以已经设想使用对由负载提供的电流Iout的测量或者对负载1中的电流的直接测量来评估其功耗或者调节电流源的值。然而,这将需要修改实际的负载电路。此外,在负载水平从由负载消耗的电流的采样数据可能影响其特性。It may have been envisaged to use the measurement of the current lout provided by the load or the direct measurement of the current in the load 1 to assess its power consumption or to adjust the value of the current source. However, this will require modification of the actual load circuit. Furthermore, sampling data from the current drawn by the load at the load level may affect its characteristics.
因此,如图2中所示,提供利用流经齐纳二极管3的电流来控制电流源4中的电流。实际上,如果负载功耗降低,则齐纳二极管的支路中的电流趋于增加,如果负载功耗增加,则齐纳二极管的支路中的电流趋于降低。Therefore, as shown in FIG. 2 , it is provided to control the current in the current source 4 using the current flowing through the Zener diode 3 . In fact, the current in the branch of the Zener diode tends to increase if the load power dissipation decreases, and the current in the branch of the Zener diode tends to decrease if the load power dissipation increases.
图3示出诸如图2中所示的功率电路的实施例的电路图。FIG. 3 shows a circuit diagram of an embodiment of a power circuit such as that shown in FIG. 2 .
被装配为二极管的MOS晶体管P1(在此具有P沟道)被插入在齐纳二极管3的阴极与端子21之间。晶体管P1被装配为在P沟道MOS晶体管P2上的电流镜,P沟道MOS晶体管P2与N沟道MOS晶体管N2在端子21和22之间串联连接。晶体管N2被装配为二极管和在N沟道MOS晶体管N1上的电流镜。晶体管N1与电流至电压转换电阻元件R在直流电压(Vcc)的应用的端子21’与接地22之间串联。施加至端子21’的电压Vcc并非必需与施加至端子21的电压相同。实际上,施加至端子21’的电压Vcc通常为更低的电压。电阻R和晶体管N1的接合点51连接至形成电流源4的N沟道MOS晶体管N4的栅极。A MOS transistor P1 configured as a diode (here with a P-channel) is inserted between the cathode of the Zener diode 3 and the terminal 21 . Transistor P1 is configured as a current mirror on a P-channel MOS transistor P2 connected in series with an N-channel MOS transistor N2 between terminals 21 and 22 . Transistor N2 is configured as a diode and current mirror on N-channel MOS transistor N1. Transistor N1 and current-to-voltage converting resistive element R are connected in series between terminal 21' of application of direct voltage (Vcc) and ground 22. The voltage Vcc applied to the terminal 21' is not necessarily the same as the voltage applied to the terminal 21. In practice, the voltage Vcc applied to the terminal 21' is usually a lower voltage. The junction 51 of the resistor R and the transistor N1 is connected to the gate of the N-channel MOS transistor N4 forming the current source 4 .
假设负载功耗增加,晶体管P1中的电流并且因此齐纳二极管3中的电流趋于降低。在晶体管P2中并且随后在晶体管N1(电流镜N1、N2)中再现的电流降低在功能上相当于修改由元件R和晶体管N1的导通状态电阻形成的电阻桥的值。这导致在节点51处的电压的增加,由此由晶体管N4牵引的电流增加。Assuming that the load power dissipation increases, the current in transistor P1 and thus in Zener diode 3 tends to decrease. The current reduction reproduced in transistor P2 and subsequently in transistor N1 (current mirrors N1 , N2 ) is functionally equivalent to modifying the value of the resistive bridge formed by element R and the on-state resistance of transistor N1 . This results in an increase in the voltage at node 51 and thus an increase in the current drawn by transistor N4.
相反,如果负载功耗增加,晶体管P1中的电流增加反映在晶体管N1中的电流上,其引起晶体管N4的栅极电压CTRL的降低,由此由晶体管N4牵引的电流降低。Conversely, if the load power consumption increases, the current increase in transistor P1 is reflected in the current in transistor N1, which causes a decrease in the gate voltage CTRL of transistor N4, whereby the current drawn by transistor N4 decreases.
在确定图3的电路的大小中,将当然考虑如下事实,现在通过齐纳二极管的阈值电压加上二极管装配的晶体管P1的阈值电压来设置负载1的电源电压。In dimensioning the circuit of FIG. 3 , the fact that the supply voltage of the load 1 is now set by the threshold voltage of the Zener diode plus the threshold voltage of the diode-fitted transistor P1 will of course be taken into account.
所讨论的实施例的一个优势在于其优化实现为负载1供电的电流源4的功耗。另一优势是该调整不需要直接测量负载功耗或者这一负载的输出电流Iout。所描述的实施例的实施方式因此不需要修改待供电的负载1。One advantage of the discussed embodiment is that it optimizes the power consumption of the current source 4 powering the load 1 . Another advantage is that the adjustment does not require direct measurement of the load power consumption or the output current lout of this load. The implementation of the described embodiment thus requires no modification of the load 1 to be powered.
作为一个具体实施例,电压Vbat是几十伏特的电压。负载1是旨在为应用电路供电的电荷泵电路。电压Vcc为几伏特的量级。As a specific example, the voltage Vbat is a voltage of tens of volts. Load 1 is a charge pump circuit designed to power the application circuit. The voltage Vcc is of the order of a few volts.
图4图示能够形成图2和图3的电路的负载1的电荷泵电路的示例。这一电路本身是常见的。FIG. 4 illustrates an example of a charge pump circuit capable of forming the load 1 of the circuits of FIGS. 2 and 3 . This circuit itself is common.
时钟发生器11(CK Gen)在端子21和23之间被供电并且提供与第二反相器13串联的第一反相器12的输入信号。反相器12和13的输出各自分别连接至电容元件14和15的第一电极。三个二极管16、17和18在端子21和提供电流Iout的端子19之间串联连接。最终,电容器14和15的第二相应电极分别连接在二极管16和17之间、在二极管17和18之间。这一电路的操作是已知的。A clock generator 11 (CK Gen) is powered between terminals 21 and 23 and provides the input signal of the first inverter 12 in series with the second inverter 13 . Outputs of the inverters 12 and 13 are each connected to first electrodes of the capacitive elements 14 and 15, respectively. Three diodes 16, 17 and 18 are connected in series between terminal 21 and terminal 19 which supplies current lout. Finally, the second corresponding electrodes of capacitors 14 and 15 are connected between diodes 16 and 17, between diodes 17 and 18, respectively. The operation of this circuit is known.
已经描述各种实施例。对于本领域技术人员而言各种变更、修改和改进将发生。具体而言,尽管已经关于在正电压侧上连接的负载1描述实施例,但是所描述的电路容易变换成与电流源串联的负载,电流源在正电压侧上。此外,尽管描述了其中通过跨负载连接的外部限制元件确保负载中的电流限制的实施例,但是也可以使用参考电压(例如在负载内部)来控制晶体管P1的栅极。这一变化具体旨在用于负载具有此类参考电压的情况。最终,基于以上提供的功能指示、负载的最大所需功耗,并且通过使用本身常见的电子电路测量(sizing)工具,确定电路部件的大小在本领域技术人员的能力内。Various embodiments have been described. Various alterations, modifications and improvements will occur to those skilled in the art. In particular, although the embodiments have been described with respect to a load 1 connected on the positive voltage side, the described circuit is easily transformed into a load connected in series with a current source, which is on the positive voltage side. Furthermore, although an embodiment is described in which current limitation in the load is ensured by an external limiting element connected across the load, it is also possible to use a reference voltage (eg internal to the load) to control the gate of transistor P1. This change is specifically intended for use where the load has such a reference voltage. Ultimately, it is within the ability of a person skilled in the art to size the circuit components based on the functional indications provided above, the maximum required power consumption of the load, and by using electronic circuit sizing tools common per se.
此类变更、修改和改进旨在作为本公开的一部分,并且旨在在本申请的精神和范围内。因此,前述描述仅借由示例而非旨在限制。本申请仅由权利要求和其等价物限定。Such alterations, modifications, and improvements are intended to be part of this disclosure, and are intended to be within the spirit and scope of the application. Accordingly, the foregoing description is by way of example only and is not intended to be limiting. This application is limited only by the claims and their equivalents.
虽然已经参考示例性实施例描述本申请,但是该描述并不旨在解释为限制性情形。通过参考描述,示例性实施例的各种修改和组合以及本申请的其它实施例对于本领域技术人员来说将是明显的。因此,旨在所附权利要求包含任何此类修改和实施例。While this application has been described with reference to exemplary embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the exemplary embodiments, as well as other embodiments of the application, will be apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims cover any such modifications and embodiments.
Claims (9)
- A kind of 1. circuit, it is characterised in that including:Current source, it is configured as and is supported on the two of the application of the first DC voltage It is connected in series between individual terminal;It is coupled to element of the limitation across the voltage of the load;And control circuit, it is configured as profit The electric current flowed in the element controls the value of the electric current in the current source.
- 2. circuit according to claim 1, it is characterised in that the element includes being connected in the load and the electricity The Zener diode at the abutment between stream source.
- 3. circuit according to claim 1, it is characterised in that the circuit includes the first MOS transistor, and described first MOS transistor fitted to be diode and the current mirror on the second MOS transistor, the second transistor and third transistor Connected between the terminal of the application of first DC voltage, and the third transistor fitted to be diode and Current mirror on the 4th transistor of the control terminal of the current source is connected to.
- 4. circuit according to claim 3, it is characterised in that the element includes being connected in the load and the electricity The Zener diode at the abutment between stream source.
- 5. circuit according to claim 4, it is characterised in that the Zener diode is connected with the first transistor.
- 6. circuit according to claim 3, it is characterised in that the element is inside the load and controls described One transistor.
- 7. circuit according to claim 3, it is characterised in that the 4th transistor AND gate resistive element is in the second direct current Connected between two terminals of the application of pressure.
- 8. circuit according to claim 1, it is characterised in that the current source is formed by MOS transistor.
- 9. circuit according to claim 1, it is characterised in that the load includes charge pump circuit.
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| CN201610717974.0A CN107783579A (en) | 2016-08-24 | 2016-08-24 | circuit |
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| CN201610717974.0A CN107783579A (en) | 2016-08-24 | 2016-08-24 | circuit |
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Application publication date: 20180309 |