CN107803744A - A kind of method for grinding rear surface of semiconductor crystal wafer - Google Patents
A kind of method for grinding rear surface of semiconductor crystal wafer Download PDFInfo
- Publication number
- CN107803744A CN107803744A CN201710879322.1A CN201710879322A CN107803744A CN 107803744 A CN107803744 A CN 107803744A CN 201710879322 A CN201710879322 A CN 201710879322A CN 107803744 A CN107803744 A CN 107803744A
- Authority
- CN
- China
- Prior art keywords
- grinding
- semiconductor crystal
- crystal wafer
- pressure
- workbench
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/0076—Other grinding machines or devices grinding machines comprising two or more grinding tools
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02013—Grinding, lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02016—Backside treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention discloses a kind of method for grinding rear surface of semiconductor crystal wafer, comprise the following steps：(1) will be fixed on after semiconductor wafer sticky wax on a workbench, wherein the workbench has a surface, and the front of the semiconductor crystal wafer is located on the table surface, and wherein the workbench has one or more holes, and one or more sensors are to be placed in one or more holes；(2) semiconductor crystal wafer is placed between the upper millstone of grinder and lower millstone, adds abrasive, four kinds of pressure grindings are carried out to semiconductor crystal wafer；(3) parameter that one or more sensors measure is monitored in the grinding steps；And according to the parameter adjustment grinding steps；(4) it is wax water and the volume ratio 1 of deionized water in proportioning by the semiconductor crystal wafer gone out after grinding：20~32 go in wax water, 45~50 DEG C of temperature carry out ultrasounds and remove wax 5min, produced after drying needed for thickness semiconductor crystal wafer.
Description
Technical field
The present invention relates to semiconductor crystal wafer technical field, and in particular to a kind of method for grinding rear surface of semiconductor crystal wafer.
Background technology
The trend of continual reductions semiconductor dimensions faces multiple challenges.In the batch production technique of integrated circuit, size reduction
One of method be to use very thin semiconductor wafer.There is this area inventor known to part to use grinding back surface method, with reduction
The thickness of semiconductor wafer.Actually operation first to complete the facade element of semiconductor wafer, then removed by chip back surface it is unnecessary
Base material.
Overleaf in grinding technics, first chip is placed on workbench, unnecessary base material is then removed with abrasive wheel.Some systems
Multiple separated abrasive wheels can be had by uniting, a certain chip on a certain abrasive wheel grinding production line, and other abrasive wheels can be simultaneously
Grind other chips.Be currently known that the control of backgrinding process is related to parameter measurement, for example, the electric current of driving abrasive wheel with
And the measurement combination of both axle center rotating speeds of abrasive wheel.Understand whether the frictional force between abrasive wheel and chip is controlled by above-mentioned parameter
System is in acceptable scope.Other method then measures the electric capacity between capacitor board on wafer chip and chip.
The content of the invention
The present invention is intended to provide a kind of method for grinding rear surface of semiconductor crystal wafer.
The present invention provides following technical scheme：
A kind of method for grinding rear surface of semiconductor crystal wafer, comprises the following steps：
(1) will be fixed on after semiconductor wafer sticky wax on a workbench, wherein the workbench has a surface, and should be partly
The front of semiconductor wafer is located on the table surface, and wherein the workbench has one or more holes, and one or more
Individual sensor is to be placed in one or more holes；
(2) semiconductor crystal wafer is placed between the upper millstone of grinder and lower millstone, abrasive is added, to semiconductor crystal wafer
Carry out four kinds of pressure grindings；
(3) parameter that one or more sensors measure is monitored in the grinding steps；And according to the parameter adjustment
The grinding steps；
(4) it is wax water and the volume ratio 1 of deionized water in proportioning by the semiconductor crystal wafer gone out after grinding：20~32 remove wax
In water, 45~50 DEG C of temperature carry out ultrasounds and remove wax 5min, produced after drying needed for thickness semiconductor crystal wafer.
The step of parameter that one or more sensors measure is monitored in the step (3) includes：By a specific time period
In the pressure reading that is exported of one or more piezoelectric transducers be averaged, and will it is average after pressure reading as the parameter.
Four kinds of pressure grindings are in the step (2)：Light pressure grinding：Time is 20~40s, pressure is 30~50kg, turned
Speed is 2~6RPM, grinding flow quantity is 600~800mL/min, middle pressure grinding：Time is 20~40s, pressure be 30~50kg,
Rotating speed is 4~7RPM, grinding flow quantity is 600~800mL/min, reconditioning：Time is 20~40s, pressure is 40~60kg, turned
Speed is 7~10RPM, grinding flow quantity is 600~800mL/min, weight milling time is 180~200s, pressure be 50~
70kg, rotating speed are 10~14RPM, grinding flow quantity is 600~800mL/min.
The sensor is one or more piezoelectric transducers.
Compared with prior art, the beneficial effects of the invention are as follows：The present invention with piezoelectric transducer measurement abrasive wheel apply to
The pressure of chip；The data that piezoelectric transducer measures are converted into the readable series of values of statistics technology controlling and process instrument；And work as
Series of values suspends backgrinding process when exceeding particular range, or continues grinding back surface when series of values is located at particular range
Technique reaches required thickness until chip so that semiconductor wafer overleaf keeps consistency of thickness in grinding technics；Simultaneously through grinding
Obtained semiconductor wafer surface good quality is ground, reduces semiconductor crystal wafer chipping and the generation of crackle, reduces and be produced into
This.
Embodiment
Below in conjunction with the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described,
Obviously, described embodiment is only part of the embodiment of the present invention, rather than whole embodiments.Based in the present invention
Embodiment, the every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, all
Belong to the scope of protection of the invention.
A kind of method for grinding rear surface of semiconductor crystal wafer of embodiment, comprises the following steps：
(1) will be fixed on after semiconductor wafer sticky wax on a workbench, wherein the workbench has a surface, and should be partly
The front of semiconductor wafer is located on the table surface, and wherein the workbench has one or more holes, and one or more
Individual sensor is to be placed in one or more holes；
(2) semiconductor crystal wafer is placed between the upper millstone of grinder and lower millstone, abrasive is added, to semiconductor crystal wafer
Carry out four kinds of pressure grindings；
(3) parameter that one or more sensors measure is monitored in the grinding steps；And according to the parameter adjustment
The grinding steps；
(4) it is wax water and the volume ratio 1 of deionized water in proportioning by the semiconductor crystal wafer gone out after grinding：20~32 remove wax
In water, 45~50 DEG C of temperature carry out ultrasounds and remove wax 5min, produced after drying needed for thickness semiconductor crystal wafer.
The step of parameter that one or more sensors measure is monitored in the step (3) includes：By a specific time period
In the pressure reading that is exported of one or more piezoelectric transducers be averaged, and will it is average after pressure reading as the parameter.
Four kinds of pressure grindings are in the step (2)：Light pressure grinding：Time is 20~40s, pressure is 30~50kg, turned
Speed is 2~6RPM, grinding flow quantity is 600~800mL/min, middle pressure grinding：Time is 20~40s, pressure be 30~50kg,
Rotating speed is 4~7RPM, grinding flow quantity is 600~800mL/min, reconditioning：Time is 20~40s, pressure is 40~60kg, turned
Speed is 7~10RPM, grinding flow quantity is 600~800mL/min, weight milling time is 180~200s, pressure be 50~
70kg, rotating speed are 10~14RPM, grinding flow quantity is 600~800mL/min.
The sensor is one or more piezoelectric transducers.
It is obvious to a person skilled in the art that the invention is not restricted to the details of the one exemplary embodiment, Er Qie
In the case of without departing substantially from spirit or essential attributes of the invention, the present invention can be realized in other specific forms.Therefore, no matter
From the point of view of which point, embodiment all should be regarded as exemplary, and be nonrestrictive, the scope of the present invention is by appended power
Profit requires rather than the explanation limits, it is intended that all in the implication and scope of the equivalency of claim by falling
Change is included in the present invention.Moreover, it will be appreciated that although the present specification is described in terms of embodiments, not each
Embodiment only includes an independent technical scheme, and this narrating mode of specification is only this area for clarity
Technical staff should be using specification as an entirety, and the technical solutions in the various embodiments may also be suitably combined, forms this
The other embodiment that art personnel are appreciated that.
Claims (4)
1. a kind of method for grinding rear surface of semiconductor crystal wafer, it is characterised in that comprise the following steps：
(1) will be fixed on after semiconductor wafer sticky wax on a workbench, wherein the workbench has a surface, and the semiconductor
The front of wafer is located on the table surface, and wherein the workbench has one or more holes, and one or more biographies
Sensor is to be placed in one or more holes；
(2) semiconductor crystal wafer is placed between the upper millstone of grinder and lower millstone, adds abrasive, semiconductor crystal wafer is carried out
Four kinds of pressure grindings；
(3) parameter that one or more sensors measure is monitored in the grinding steps；And this grinds according to the parameter adjustment
Grind step；
(4) it is wax water and the volume ratio 1 of deionized water in proportioning by the semiconductor crystal wafer gone out after grinding：20~32 remove wax water
In, 45~50 DEG C of temperature carry out ultrasounds and remove wax 5min, produced after drying needed for thickness semiconductor crystal wafer.
A kind of 2. method for grinding rear surface of semiconductor crystal wafer according to claim 1, it is characterised in that：The step (3)
Middle the step of monitoring the parameter that one or more sensors measure, includes：The one or more piezoelectricity of this in one specific time period are turned
The pressure reading that parallel operation is exported is averaged, and will it is average after pressure reading as the parameter.
A kind of 3. method for grinding rear surface of semiconductor crystal wafer according to claim 1, it is characterised in that：The step (2)
In four kinds of pressure grindings be：Light pressure grinding：Time is 20~40s, pressure is 30~50kg, rotating speed is 2~6RPM, grinding liquid stream
Measure as 600~800mL/min, middle pressure grinding：Time is 20~40s, pressure is 30~50kg, rotating speed is 4~7RPM, lapping liquid
Flow is 600~800mL/min, reconditioning：Time is 20~40s, pressure is 40~60kg, rotating speed is 7~10RPM, lapping liquid
Flow is 600~800mL/min, weight milling time is 180~200s, pressure is 50~70kg, rotating speed be 10~14RPM,
Grinding flow quantity is 600~800mL/min.
A kind of 4. method for grinding rear surface of semiconductor crystal wafer according to claim 1, it is characterised in that：The sensor is
One or more piezoelectric transducers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710879322.1A CN107803744A (en) | 2017-09-26 | 2017-09-26 | A kind of method for grinding rear surface of semiconductor crystal wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710879322.1A CN107803744A (en) | 2017-09-26 | 2017-09-26 | A kind of method for grinding rear surface of semiconductor crystal wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107803744A true CN107803744A (en) | 2018-03-16 |
Family
ID=61583898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710879322.1A Pending CN107803744A (en) | 2017-09-26 | 2017-09-26 | A kind of method for grinding rear surface of semiconductor crystal wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107803744A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349867A (en) * | 2019-07-04 | 2019-10-18 | 浙江光特科技有限公司 | A kind of wax method under the wafer of application surface rough type ceramic disk |
| CN118809317A (en) * | 2024-09-18 | 2024-10-22 | 江苏陆氏金刚石工具有限公司 | Method for manufacturing ultra-thin blade |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6445567A (en) * | 1987-08-10 | 1989-02-20 | Sumitomo Electric Industries | Semiconductor wafer applying method and device |
| JPH04115865A (en) * | 1990-09-07 | 1992-04-16 | Nikko Kyodo Co Ltd | Adhesion method for work |
| CN102441840A (en) * | 2010-10-08 | 2012-05-09 | 台湾积体电路制造股份有限公司 | Semiconductor wafer back grinding control system and back grinding method |
| CN104924198A (en) * | 2014-03-20 | 2015-09-23 | 株式会社荏原制作所 | Polishing device and polishing method |
| CN105058223A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Single-side grinding method for germanium single crystal wafer |
| CN106252472A (en) * | 2016-08-31 | 2016-12-21 | 山东浪潮华光光电子股份有限公司 | A kind of auxiliary goes frock clamp and the method for work thereof of wax for GaAs base LED chip before thinning |
-
2017
- 2017-09-26 CN CN201710879322.1A patent/CN107803744A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6445567A (en) * | 1987-08-10 | 1989-02-20 | Sumitomo Electric Industries | Semiconductor wafer applying method and device |
| JPH04115865A (en) * | 1990-09-07 | 1992-04-16 | Nikko Kyodo Co Ltd | Adhesion method for work |
| CN102441840A (en) * | 2010-10-08 | 2012-05-09 | 台湾积体电路制造股份有限公司 | Semiconductor wafer back grinding control system and back grinding method |
| CN104924198A (en) * | 2014-03-20 | 2015-09-23 | 株式会社荏原制作所 | Polishing device and polishing method |
| CN105058223A (en) * | 2015-07-15 | 2015-11-18 | 中国电子科技集团公司第四十六研究所 | Single-side grinding method for germanium single crystal wafer |
| CN106252472A (en) * | 2016-08-31 | 2016-12-21 | 山东浪潮华光光电子股份有限公司 | A kind of auxiliary goes frock clamp and the method for work thereof of wax for GaAs base LED chip before thinning |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349867A (en) * | 2019-07-04 | 2019-10-18 | 浙江光特科技有限公司 | A kind of wax method under the wafer of application surface rough type ceramic disk |
| CN118809317A (en) * | 2024-09-18 | 2024-10-22 | 江苏陆氏金刚石工具有限公司 | Method for manufacturing ultra-thin blade |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
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Application publication date: 20180316 |