CN107827101A - A kind of method for growing graphene on a sapphire substrate - Google Patents
A kind of method for growing graphene on a sapphire substrate Download PDFInfo
- Publication number
- CN107827101A CN107827101A CN201711333674.3A CN201711333674A CN107827101A CN 107827101 A CN107827101 A CN 107827101A CN 201711333674 A CN201711333674 A CN 201711333674A CN 107827101 A CN107827101 A CN 107827101A
- Authority
- CN
- China
- Prior art keywords
- growth
- grapheme material
- sapphire substrate
- production
- graphene
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 69
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 59
- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 45
- 239000010980 sapphire Substances 0.000 title claims abstract description 45
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 33
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 19
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 15
- 239000003513 alkali Substances 0.000 claims abstract description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012159 carrier gas Substances 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 239000008367 deionised water Substances 0.000 claims abstract description 5
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 28
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical group C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 150000001336 alkenes Chemical class 0.000 claims description 5
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 239000001294 propane Substances 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 3
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 5
- 238000012546 transfer Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000005137 deposition process Methods 0.000 abstract description 3
- 238000001035 drying Methods 0.000 abstract description 2
- 239000006104 solid solution Substances 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000001237 Raman spectrum Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- -1 resist residue Substances 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
Abstract
The present invention relates to a kind of on a sapphire substrate using the method for vapour deposition process growth grapheme material, specifically include：1st, the pretreatment of Sapphire Substrate：The sapphire substrate sheet that roughness is 0.10nm 0.60nm is soaked 25 hours in alkali lye, uses deionized water rinsing after substrate slice is taken out into natural cooling, and be that the drying of 99.5% nitrogen is standby with purity；2nd, the growth of grapheme material：Treated sapphire substrate sheet is placed in chemical vapor deposition stove reative cell center, setting growth temperature is 1050 DEG C 1350 DEG C, growth pressure is 3 × 104Pa, by carbon source and carrier gas at the uniform velocity by reative cell, after growth terminates, room temperature is cooled to 5 DEG C/min speed and taken out, i.e., is grown the product of grapheme material on a sapphire substrate.The present invention provides the method in insulated substrate surface growth graphene, solves at present in carbon solid solution phenomenon existing for transiting metal surface growth graphene, and need not carry out the transfer of grapheme material again, to avoid introducing new impurity in transfer process.
Description
Technical field
The present invention relates to a kind of on a sapphire substrate using the method for vapour deposition process growth grapheme material.
Background technology
The technology of preparing of large-area graphene is to promote the wide variety of basic premise of graphene, in numerous graphene materials
In preparation method for material, transiting metal surface chemical vapor deposition (CVD) method can realize large area, the system of high-quality graphene material
It is standby.This method cost is low, technique is simple, and is adapted to large-scale industrialization growth.But using chemistry on transition metal substrate
Also there is following both sides in vapour deposition process growth grapheme material, first, the grapheme material of growth needs to shift
Onto dielectric substrate, resist residue, impurity and lattice defect etc. are inevitably introduced in transfer process；Secondly, in stone
In the higher temperature growth processes of black alkene, carbon easily occurs certain carbon in transiting metal surface and is dissolved phenomenon, in temperature-fall period, carbon
Atom causes grapheme material quality and uniformity to reduce from transition metal internal segregation to surface.At present, in carbon solid solubility most
Also there is 5% bilayer or sandwich construction in the best grapheme material of low Cu paper tinsel Growns, had a strong impact on graphite
The performance of alkene material.
CN103172061A, a kind of method of the graphene of growing large-area on an insulating substrate, the present invention is with insulating materials
As growth substrate, using copper foil as catalyst, with carbon source (such as methane), hydrogen and protective gas (such as inert gas) for source of the gas,
Using the chemical gaseous phase depositing process of two-step method (low-pressure growth and high pressure growth), connect by dielectric substrate and the face-to-face of copper foil
Touch, the graphene of large area is grown on an insulating substrate using the short range catalytic effect of copper foil.Step：1) preparation of samples:To exhausted
Edge substrate and copper foil are cleaned, with organics removal and impurity metal ion；Make the dielectric base after cleaning and copper-clad surface face
Contact, obtains sample；2) temperature rise period:It is continually fed into the mixed gas of protective gas and hydrogen into reactor, while by institute
State sample to be placed in the reactor, be heated to 1005-1030 DEG C (preferably 1020 DEG C), and be incubated 10-30 minutes (preferably
10 minutes)；3) the low-pressure growth stage:The temperature of the reactor is maintained, and it is 100- to adjust the pressure in the reactor
120Pa (preferably 100Pa), carbon source, protective gas and hydrogen then are passed through simultaneously into the reactor, is given birth on this condition
Long graphene 20-40 minutes (preferably 30 minutes)；4) the high pressure growth stage:The temperature of the reactor is maintained, keeps step 3)
In each gas flow it is constant, adjust the pressure in the reactor to 400-500Pa (preferably 400Pa), give birth on this condition
Long graphene 50-70 minutes (preferably 60 minutes)；5) temperature-fall period:After growth terminates, the temperature of the reactor is reduced to room
Temperature, sample is taken out, obtain being deposited on the graphene of large area in the dielectric substrate；This process keeps pressure, carbon source, protection gas
The flow of body is constant, heightens the flow of hydrogen.Wherein, dielectric substrate described in step 1) can specifically use any one following material
Substrate made of material:Sapphire, quartz etc..The copper foil is commercially produced product, and more than 99.999%, thickness can be purity
0.02um-0.04um；Protective gas described in step 2) can be inert gas (such as argon gas), and its flow is 90-110sccm,
Concretely 100sccm；Hydrogen flowing quantity is 15-20sccm, concretely 20sccm.During the heating and insulation, institute
It is 400Pa to state the pressure in reactor；Concretely methane, ethene etc., its flow are 1-5sccm to carbon source described in step 3),
It is preferred that 4-5sccm；Hydrogen flowing quantity is 0.4-0.8sccm, concretely 0.8sccm；The protective gas can be for inert gas (such as
Argon gas etc.), its flow is 90-110sccm, concretely 100sccm.
Existing part is on the research in the New insulated such as sapphire substrate surface growth grapheme material, its method now
It is concentrated mainly on using mechanical means grinding sapphire substrate surface, by reasonably controlling the roughness of substrate surface, to carry
Adhesive force of the high graphene in substrate surface.But on the one hand exist in the graphene that Grown goes out compared with macrofold, roughness
It is very big, cause product resistance unstable；On the other hand, because graphene with substrate surface is only that Van der Waals force is connected, not with lining
Basal surface atom forms stable chemical bond, and what graphene can not be stablized is attached to substrate surface, is influenceing grapheme material just
Often use.
The content of the invention
Present invention solves the technical problem that being to handle Sapphire Substrate by chemical method for etching, both obtain sapphire suitable
In the roughness of graphene growth, the atom of sapphire substrate surface has also been activated, has made it under the conditions of graphene growth, can be with
Stable adhesion, stability of the increase graphene in sapphire substrate surface are formed between graphene.
Realizing the technical scheme of above-mentioned purpose is：
A kind of method for producing grapheme material with chemical vapour deposition technique on a sapphire substrate, it is comprised the concrete steps that：
1st, the pretreatment of Sapphire Substrate：The sapphire substrate sheet that roughness is 0.10nm-0.60nm is soaked in alkali lye
2-5 hours are steeped, use deionized water rinsing after substrate slice is taken out into natural cooling, and be that the drying of 99.5% nitrogen is standby with purity.
2nd, the growth of grapheme material：Treated sapphire substrate sheet is placed in chemical vapor deposition stove reative cell
Centre, setting growth temperature is 1050 DEG C -1350 DEG C, growth pressure is 3 × 104Pa, by carbon source and carrier gas at the uniform velocity by reative cell,
After growth terminates, room temperature is cooled to 5 DEG C/min speed and taken out, i.e., is grown grapheme material on a sapphire substrate
Product.
Wherein：
Substrate slice is c surface sapphires；
The alkali lye for soaking substrate slice is NaOH, KOH or the aqueous solution of its composition；
The tune pH value for soaking substrate slice alkali lye is 9.8-10.1；
The temperature for soaking substrate slice is 75-80 DEG C；
The carbon source of chemical vapor deposition growth graphene is methane or propane；
The flow velocity of carbon source gas is 1-3ml/min；
The carrier gas of chemical vapor deposition growth graphene is hydrogen；
Carrier gas flux is 1-5ml/min；
The growth time of chemical vapor deposition graphene is 50-100min.
The present invention is achievable to be had the beneficial effect that：
1st, by dipping by lye sapphire substrate sheet, it on the one hand can improve the roughness on sapphire substrate sheet surface, make
It is suitable to the growth of graphene；On the other hand, the oxygen atom on sapphire substrate sheet surface can be activated, is made it easy to thin with graphene
Stable C-O keys are formed between film layer, increase the stability of graphene film.
The 2nd, method in insulated substrate surface growth graphene is provided, solve and grow graphite in transiting metal surface at present
Carbon existing for alkene is dissolved phenomenon, and need not carry out the transfer of grapheme material again, new to avoid introducing in transfer process
Impurity.
Embodiment
Whole production process is to be carried out in the dust-free workshop of cleaning requirements more than 1000, ensures not draw in production process
Enter other impurities.
Embodiment 1：
Be 0.10nm by roughness, a diameter of 15cm c surface sapphire substrates piece pH value be 9.8, temperature be 75 DEG C
Soaked 2.5 hours in KOH alkali lye, use deionized water rinsing after substrate slice is taken out into natural cooling, and be 99.5% nitrogen with purity
Air-blowing is done.Treated sapphire substrate sheet is placed in chemical vapor deposition stove reative cell center, uses methane as carbon source, methane
Flow be 3ml/min, the flow of carrier gas hydrogen is 5ml/min, to set growth temperature be 1100 DEG C, growth pressure be 3 ×
104Pa, growth time 70min, after growth terminates, room temperature is cooled to 5 DEG C/min speed and taken out, that is, is obtained in sapphire
The product of Grown grapheme material.
Surface roughness test is carried out to pretreated sapphire substrate sheet using AFM, the results showed that,
Roughness through handling backsight backsheet surface is changed into 0.26nm, it is seen that alkali lye has obvious etching action to sapphire surface；
The graphene substrate piece of Grown on Sapphire Substrates is characterized using Raman spectrum, discovery, which removes, has 1580cm-1(G peaks),
1270cm-1-1450cm-1(D peaks) and 2700cm-1Outside the characteristic peak of (2D peaks) 3 graphenes, the spy also in the presence of obvious C-O keys
Levy peak 1270cm-1, illustrate that stable ionic bond is formd between graphene and sapphire substrate sheet to be combined；To in Sapphire Substrate
The graphene print that is grown on piece carries out square resistance Mapping tests, as a result show the resistance of print 1100-1150 Ω/
Between, it was demonstrated that obtained graphene film has good uniformity consistency.
Embodiment 2：
Be 0.50nm by roughness, a diameter of 15cm c surface sapphire substrates piece pH value be 10.2, temperature be 80 DEG C
Soak 4.5 hours, will be rinsed well after substrate slice taking-up natural cooling with deionized water, and be with purity in KOH alkali lye
99.5% nitrogen dries up.Treated sapphire substrate sheet is placed in chemical vapor deposition stove reative cell center, use propane for
Carbon source, the flow of methane is 3ml/min, and the flow of carrier gas hydrogen is 5ml/min, sets growth temperature to be 1300 DEG C, grow pressure
Power is 3 × 104Pa, growth time 80min, after growth terminates, room temperature is cooled to 5 DEG C/min speed and taken out, that is, is obtained
The product of grapheme material is grown on a sapphire substrate.
Surface roughness test is carried out to pretreated sapphire substrate sheet using AFM, the results showed that,
Roughness through handling backsight backsheet surface is changed into 0.30nm, it is seen that alkali lye has obvious repair to sapphire surface roughness
Effect；The graphene substrate piece of Grown on Sapphire Substrates is characterized using Raman spectrum, discovery, which removes, has 1580cm-1(G
Peak), 1270-1450cm-1(D peaks) and 2700cm-1Outside the characteristic peak of (2D peaks) 3 graphenes, also in the presence of obvious C-O keys
Characteristic peak 1270cm-1, illustrate that stable ionic bond is formd between graphene and sapphire substrate sheet to be combined；To being served as a contrast in sapphire
The graphene print grown on egative film carries out square resistance Mapping tests, as a result shows the square resistance of print still in 1100-
Between 1150 Ω/, it was demonstrated that obtained graphene film has good uniformity consistency.
Disclosed above is only several specific embodiments of the application, but the application is not limited to this, any no essence
The change of innovation, it should all fall in the protection domain of the application.
Claims (8)
- A kind of 1. method for producing grapheme material with chemical vapour deposition technique on a sapphire substrate, it is characterised in that including Following steps：(1) pretreatment of Sapphire Substrate：The sapphire substrate sheet that roughness is 0.10nm-0.60nm is soaked into 2- in alkali lye 5 hours, deionized water rinsing is used after substrate slice is taken out into natural cooling, and dried up for 99.5% nitrogen with purity；(2) growth of grapheme material：Treated sapphire substrate sheet is placed in chemical vapor deposition stove reative cell center, if Put growth temperature be 1050 DEG C -1350 DEG C, growth pressure be 3 × 104Pa, carbon source and carrier gas are at the uniform velocity passed through into reative cell, growth After end, room temperature is cooled to 5 DEG C/min speed and taken out, i.e., is grown the production of grapheme material on a sapphire substrate Product.
- 2. the method for production grapheme material as claimed in claim 1, it is characterised in that the sapphire substrate sheet is that c faces are blue Jewel.
- 3. as claimed in claim 1 production grapheme material method, it is characterised in that it is described immersion substrate slice alkali lye be NaOH, KOH or its composition aqueous solution.
- 4. the method for production grapheme material as claimed in claim 3, it is characterised in that the pH value of the immersion substrate slice alkali lye For 9.8-10.1.
- 5. as claimed in claim 1 production grapheme material method, it is characterised in that it is described immersion substrate slice temperature be 75-80℃。
- 6. the method for production grapheme material as claimed in claim 1, it is characterised in that the chemical vapor deposition growth graphite The carbon source of alkene is methane or propane, and the flow velocity of carbon source gas is 1-3ml/min.
- 7. the method for production grapheme material as claimed in claim 1, it is characterised in that the chemical vapor deposition growth graphite The carrier gas of alkene is hydrogen, carrier gas flux 1-5ml/min.
- 8. the method for production grapheme material as claimed in claim 1, it is characterised in that the chemical vapor deposition graphene Growth time is 50-100min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711333674.3A CN107827101A (en) | 2017-12-14 | 2017-12-14 | A kind of method for growing graphene on a sapphire substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711333674.3A CN107827101A (en) | 2017-12-14 | 2017-12-14 | A kind of method for growing graphene on a sapphire substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107827101A true CN107827101A (en) | 2018-03-23 |
Family
ID=61644429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711333674.3A Pending CN107827101A (en) | 2017-12-14 | 2017-12-14 | A kind of method for growing graphene on a sapphire substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107827101A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086343A (en) * | 2020-08-24 | 2020-12-15 | 中国科学院长春光学精密机械与物理研究所 | Hexagonal boron nitride film growth method and hexagonal boron nitride film |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012092061A2 (en) * | 2010-12-29 | 2012-07-05 | University Of North Texas | Graphene formation on dielectrics and electronic devices formed therefrom |
| CN102915913A (en) * | 2012-10-22 | 2013-02-06 | 西安电子科技大学 | Graphene CVD (chemical vapor deposition) direct epitaxial growth method based on sapphire substrate and device fabricated with method |
| CN104045079A (en) * | 2014-06-25 | 2014-09-17 | 无锡格菲电子薄膜科技有限公司 | Method for epitaxially growing graphene on sapphire/epitaxial metal interface |
| CN104701146A (en) * | 2014-12-31 | 2015-06-10 | 中国科学院物理研究所 | Graphene nano-electronical appliance and preparation method thereof |
| CN104803709A (en) * | 2014-01-24 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | Method for growing graphene based on sapphire substrate |
| CN104911556A (en) * | 2015-05-02 | 2015-09-16 | 四川理工学院 | Preparation technology for Ni submicron arrays |
| CN105845786A (en) * | 2015-01-15 | 2016-08-10 | 广东量晶光电科技有限公司 | Graphical sapphire substrate recycling method |
| US20160344035A1 (en) * | 2015-05-21 | 2016-11-24 | Aruna Zhamu | Alkali Metal Secondary Battery Containing a Carbon Matrix- or Carbon Matrix Composite-based Dendrite-Intercepting Layer |
-
2017
- 2017-12-14 CN CN201711333674.3A patent/CN107827101A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012092061A2 (en) * | 2010-12-29 | 2012-07-05 | University Of North Texas | Graphene formation on dielectrics and electronic devices formed therefrom |
| CN102915913A (en) * | 2012-10-22 | 2013-02-06 | 西安电子科技大学 | Graphene CVD (chemical vapor deposition) direct epitaxial growth method based on sapphire substrate and device fabricated with method |
| CN104803709A (en) * | 2014-01-24 | 2015-07-29 | 泉州市博泰半导体科技有限公司 | Method for growing graphene based on sapphire substrate |
| CN104045079A (en) * | 2014-06-25 | 2014-09-17 | 无锡格菲电子薄膜科技有限公司 | Method for epitaxially growing graphene on sapphire/epitaxial metal interface |
| CN104701146A (en) * | 2014-12-31 | 2015-06-10 | 中国科学院物理研究所 | Graphene nano-electronical appliance and preparation method thereof |
| CN105845786A (en) * | 2015-01-15 | 2016-08-10 | 广东量晶光电科技有限公司 | Graphical sapphire substrate recycling method |
| CN104911556A (en) * | 2015-05-02 | 2015-09-16 | 四川理工学院 | Preparation technology for Ni submicron arrays |
| US20160344035A1 (en) * | 2015-05-21 | 2016-11-24 | Aruna Zhamu | Alkali Metal Secondary Battery Containing a Carbon Matrix- or Carbon Matrix Composite-based Dendrite-Intercepting Layer |
Non-Patent Citations (1)
| Title |
|---|
| 刘庆彬等，: "蓝宝石衬底上化学气相沉积法生长石墨烯", 《物理化学学报》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112086343A (en) * | 2020-08-24 | 2020-12-15 | 中国科学院长春光学精密机械与物理研究所 | Hexagonal boron nitride film growth method and hexagonal boron nitride film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103981507B (en) | A kind of graphene preparation method | |
| CN103224231B (en) | Transfer method of graphite film | |
| CN107188161B (en) | Graphene and preparation method thereof | |
| CN102161482A (en) | Method for preparing graphene | |
| CN103352202B (en) | A kind of controllable method for preparing of normal-pressure chemical-vapor-deposlarge-area large-area high-quality double-layer graphene film | |
| CN102874801A (en) | Preparation method for graphene | |
| CN105568253B (en) | A kind of method of apparatus for plasma chemical vapor deposition growth hexagonal boron nitride | |
| CN103613094B (en) | A kind of method simultaneously preparing Graphene and porous amorphous carbon film | |
| CN110699749B (en) | A kind of method for preparing large-area continuous single-layer single-crystal graphene film | |
| CN109824042B (en) | A kind of method for regulating graphene electrochemical exfoliation | |
| CN104495829A (en) | Method for preparing graphene film on low-temperature substrate | |
| CN104176734A (en) | Preparation method of nitrogen-doped graphene | |
| CN103346073B (en) | A kind of preparation method of β-silicon carbide thin film | |
| CN110666158A (en) | Method for coating nano copper with graphene | |
| CN106882926A (en) | The method for preparing transparent graphene conductive film | |
| CN111676450B (en) | Hexagonal boron nitride thick film based on ion beam sputtering deposition and preparation method and application | |
| CN111717911B (en) | Preparation method of graphene film | |
| CN107032331A (en) | A kind of graphene preparation method based on dielectric base | |
| CN106517165A (en) | Method for growing graphene by metal-assisted internal/external carbon sources combination mode on 6H/4H-SiC silicon surface | |
| CN103213976B (en) | Method for directly preparing graphene on surface of substrate | |
| CN107827101A (en) | A kind of method for growing graphene on a sapphire substrate | |
| CN112746263B (en) | Method for preparing few-layer graphene film through normal-pressure chemical vapor deposition | |
| CN107298437A (en) | A kind of method of PVD method low temperature preparation graphene | |
| CN102041552A (en) | Method for preparing polysilicon membrane | |
| CN109824039B (en) | Method for preparing doped graphene by taking doped graphene quantum dots as nucleation dots |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180323 |
|
| RJ01 | Rejection of invention patent application after publication |