CN107872151A - Charge pump unit, charge pump circuit and display device - Google Patents
Charge pump unit, charge pump circuit and display device Download PDFInfo
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- CN107872151A CN107872151A CN201610852454.0A CN201610852454A CN107872151A CN 107872151 A CN107872151 A CN 107872151A CN 201610852454 A CN201610852454 A CN 201610852454A CN 107872151 A CN107872151 A CN 107872151A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of DC power input into DC power output
- H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
- H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
- H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
- H02M3/073—Charge pumps of the Schenkel-type
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- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
This disclosure relates to charge pump unit, charge pump circuit and display device.Charge pump unit includes：First diode, receive input voltage signal and export to first node；First energy-storage travelling wave tube, first end receive the first pulse signal, the second end connection first node；Second diode, receive input voltage signal and export to section point；Second energy-storage travelling wave tube, first end receive the second pulse signal, the second end connection section point；First switching element, first node signal conduction is responded so that input voltage signal is exported to the 3rd node；Second switch element, section point signal conduction is responded to export the signal of the 3rd node；3rd switch element, the second pulse signal of response are turned on so that power supply voltage signal is exported to fourth node；4th switch element, the first pulse signal of response are turned on so that reset voltage signal is exported to fourth node；First electric capacity, is connected between three and fourth node.The disclosure improves charge pump unit can enlargement ratio.
Description
Technical field
This disclosure relates to display technology field, and in particular to a kind of charge pump unit, one kind apply the charge pump list
The display device of the charge pump circuit and application of the member charge pump circuit.
Background technology
With the development of optical technology and semiconductor technology, liquid crystal display device, OLED (Organic Light Emitting Diode) displays
The panel display apparatus such as device are due to high image quality, small volume, in light weight, thickness of thin, low voltage drive and low consumpting power
The advantages that, gradually substitute traditional display device, and application is very extensive, such as it is widely used in notebook electricity
On the electronic products such as brain, mobile phone, TV, digital frame.
Above-mentioned display device mainly includes display panel and the drive module of drive signal is provided for the display panel.
In drive module, often supply voltage is set to double with certain factor (such as 2,3,4,5 etc.) using charge pump circuit, from
And the voltage of output needed for obtaining.Charge pump circuit is mainly made up of charge pump unit.Charge pump unit can basis
The voltage (VCC) of signal input part is at signal output part output voltage (VCC), with reference to shown in figure 1, charge pump circuit via
Several levels charge pump unit concatenation forms, and can produce several times pressure input terminal voltage (N × VCC) in signal output part.
It is a kind of diode-type charge pump circuit with reference to shown in figure 2, it mainly includes multiple diode D1 of concatenation
~DN and multiple electric capacity C, electric capacity is interacted using two complementary pulse signal PH and PHB and charged, so as to realize multiplication of voltage
Effect.Due to the non-ideal characteristic of diode element, every one-level of diode-type charge pump circuit all needs to consume two poles
Tube voltage drop VD, amplify by N levels, the voltage of signal output part output is N × (VCC-VD), rather than N × VCC；And series is got over
Consumed diode drops more more, and greatly reduce diode-type charge pump circuit can enlargement ratio.
It is a kind of transistor-type charge pump circuit with reference to shown in figure 3, it mainly includes multiple transistor M1 of concatenation
~MN and multiple electric capacity C, electric capacity is interacted using two complementary pulse signal PH and PHB and charged, so as to realize multiplication of voltage
Effect.Due to the non-ideal characteristic of transistor unit, every one-level of transistor-type charge pump circuit all needs to consume a crystal
Pipe critical voltage VTH, amplify by N levels, the voltage of signal output part output is N × (VCC-VTH), rather than N × VCC；And
Series, and consumed transistor threshold voltage is more, equally greatly reduces amplifying for transistor-type charge pump circuit
Multiplying power.
It should be noted that information is only used for strengthening the reason to the background of the disclosure disclosed in above-mentioned background section
Solution, therefore can include not forming the information to prior art known to persons of ordinary skill in the art.
The content of the invention
The purpose of the disclosure is to provide the charge pump of a kind of charge pump unit, a kind of application charge pump unit
The display device of circuit and the application charge pump circuit, at least overcoming the limit due to correlation technique to a certain extent
One or more problem caused by system and defect.
Other characteristics and advantage of the disclosure will be apparent from by following detailed description, or partially by this public affairs
The practice opened and acquistion.
According to the first aspect of the disclosure, there is provided a kind of charge pump unit, including：
One first diode, for receiving an input voltage signal and exporting to a first node；
One first energy-storage travelling wave tube, the first end of first energy-storage travelling wave tube receive one first pulse signal, first storage
Second end of energy element is connected with the first node；
One second diode, for receiving the input voltage signal and exporting to a section point；
One second energy-storage travelling wave tube, the first end of second energy-storage travelling wave tube receive one second pulse signal, first storage
Second end of energy element is connected with the section point；
One first switching element, turned on for responding the voltage signal of the first node so that the input voltage to be believed
Number output is to one the 3rd node；
One second switch element, turned on for responding the voltage signal of the section point with by the 3rd node
Voltage signal is exported to signal output part；
One the 3rd switch element, for respond second pulse signal and turn on by a power supply voltage signal export to
One fourth node；
One the 4th switch element, for respond first pulse signal and turn on by a reset voltage signal export to
The fourth node；
One first electric capacity, is connected between the 3rd node and the fourth node.
In a kind of exemplary embodiment of the disclosure, wherein：
First diode cathode receives the input voltage signal, and negative pole connects the first node；
Second diode cathode receives the input voltage signal, and negative pole connects the section point；
The first switching element is the first transistor, and the grid of the first transistor connects the first node, leakage
Pole receives the input voltage signal, and source electrode connects the 3rd node；
The second switch element is second transistor, and the grid of the second transistor connects the section point, leakage
Pole connects the 3rd node, source electrode connection signal output part；The channel-like of the first transistor and the second transistor
Type is opposite；
3rd switch element is third transistor, and the grid of the third transistor receives the second pulse letter
Number, drain electrode is connected with the fourth node, and source electrode receives the power supply voltage signal；
4th switch element is the 4th transistor, and the grid of the 4th transistor receives the first pulse letter
Number, drain electrode is connected with the fourth node, and source electrode receives the reset voltage signal；The third transistor is brilliant with the described 4th
The channel type of body pipe is opposite.
In a kind of exemplary embodiment of the disclosure, the first transistor and the 4th transistor are that p-type is brilliant
Body pipe, the second transistor and the third transistor are N-type transistor.
In a kind of exemplary embodiment of the disclosure, the first transistor and the 4th transistor are that N-type is brilliant
Body pipe, the second transistor and the third transistor are P-type transistor.
In a kind of exemplary embodiment of the disclosure, the charge pump circuit also includes：
One filter capacitor, the first end of the filter capacitor connect the source electrode of the second transistor, the filter capacitor
The second end ground connection.
In a kind of exemplary embodiment of the disclosure, wherein：
First energy-storage travelling wave tube includes the 5th transistor, and the grid of the 5th transistor receives the first pulse letter
Number, the source electrode of the 5th transistor and drain electrode connect the first node；
Second energy-storage travelling wave tube includes the 6th transistor, and the grid of the 6th transistor receives the second pulse letter
Number, the source electrode of the 6th transistor and drain electrode connect the section point.
In a kind of exemplary embodiment of the disclosure, the 5th transistor and the 6th transistor are that p-type is brilliant
Body pipe or the 5th transistor and the 6th transistor are N-type transistor.
According to the second aspect of the disclosure, there is provided a kind of charge pump circuit, including any one above-mentioned charge pump list
Member.
In a kind of exemplary embodiment of the disclosure, the charge pump circuit includes the multistage charge pump of cascade
Pu unit；Wherein, in addition to charge pump unit described in afterbody, the signal of the output of charge pump unit is described in per one-level
The input voltage signal of charge pump unit described in next stage.
According to the third aspect of the disclosure, there is provided a kind of display device, including display panel and be the display panel
The drive module of drive signal is provided；The drive module includes any one above-mentioned charge pump circuit.
In a kind of exemplary embodiment of the disclosure, the drive module be source electrode driver, gate drivers and
One or more in common voltage driver
In the example embodiment of the disclosure, by setting the first to the second diode, the first to the second energy-storage travelling wave tube, the
One to the 4th switch element and the first electric capacity so that the conducting voltage of diode can be prestored in the charging stage, so as to
Influence of the high voltage stage using the conducting voltage for the conducting voltage counteracting diode for prestoring diode can be being proposed, and then
Can effectively improve charge pump unit can enlargement ratio.
It should be appreciated that the general description and following detailed description of the above are only exemplary and explanatory, not
The disclosure can be limited.
Brief description of the drawings
Accompanying drawing herein is merged in specification and forms the part of this specification, shows the implementation for meeting the disclosure
Example, and be used to together with specification to explain the principle of the disclosure.It should be evident that drawings in the following description are only the disclosure
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.
Fig. 1 is a kind of structural representation of charge pump circuit.
Fig. 2 is a kind of structural representation of diode-type charge pump circuit.
Fig. 3 is a kind of structural representation of transistor-type charge pump circuit.
Fig. 4 is a kind of structural representation of charge pump unit in disclosure example embodiment.
Fig. 5 is a kind of structural representation of charge pump unit in disclosure example embodiment.
Fig. 6 is a kind of waveform diagram of the signal of charge pump unit in disclosure example embodiment.
Fig. 7 is a kind of structural representation of pulse signal generation circuit in disclosure example embodiment.
Fig. 8 is a kind of structural representation of charge pump unit in disclosure example embodiment.
Fig. 9 is a kind of structural representation of charge pump circuit in disclosure example embodiment.
Embodiment
Exemplary embodiment is described more fully with referring now to accompanying drawing.However, exemplary embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that the disclosure will
Fully and completely, and by the design of exemplary embodiment comprehensively it is communicated to those skilled in the art.In figure, in order to clear
It is clear, exaggerate, deform or simplify geomery.Identical reference represents same or similar structure in figure, because
And their detailed description will be omitted.
In addition, described feature, structure or step can be incorporated in any suitable manner it is one or more
In embodiment.In the following description, there is provided many details fully understand so as to provide to embodiment of the disclosure.So
And it will be appreciated by persons skilled in the art that the technical scheme of the disclosure can be put into practice without one in the specific detail
It is either more or other methods, step, structure etc. can be used.
A kind of charge pump unit is provide firstly in this example embodiment.With reference to shown in figure 4, this example embodiment party
Charge pump unit in formula mainly includes one first diode D1, one first energy-storage travelling wave tube ES1, one second diode D2, one
Second energy-storage travelling wave tube ES2, a first switching element S1, a second switch element S2, one the 3rd switch element S3, one the 4th switch
Element S4 and one first electric capacity C1.Wherein, the first diode D1 is used to receive an input voltage signal VI and exported extremely
One first node N1.The first end of the first energy-storage travelling wave tube ES1 receives one first pulse signal Q, first energy-storage travelling wave tube
ES1 the second end is connected with the first node N1.The second diode D2 is used to receive the input voltage signal VI simultaneously
Export to a section point N2.The first end of the second energy-storage travelling wave tube ES2 receives one second pulse signal QB, first storage
Energy element ES1 the second end is connected with the section point N2.In this example embodiment, the first pulse signal Q and
Two pulse signal QB are not exclusively overlapping pulse signal；But in other exemplary embodiments of the disclosure, first arteries and veins
It can also be identical pulse signal to rush signal Q and the second pulse signal QB.The first switching element S1 is described for responding
First node N1 voltage signal and turn on so that the input voltage signal VI is exported to one the 3rd node N3.Described second opens
Element S2 is closed to be used to respond the voltage signal of the section point N2 and turn on so that the voltage signal of the 3rd node N3 is defeated
Go out to signal output part VO.The 3rd switch element S3 is used to respond the second pulse signal QB and turn on by a power supply
Voltage signal is exported to a fourth node N4.The 4th switch element S4 is used to respond the first pulse signal Q and turn on
So that a reset voltage signal is exported to the fourth node N4；In this example embodiment, the reset voltage signal is for example
It can be ground voltage.The first electric capacity C1 is connected between the 3rd node N3 and the fourth node N4.
Shown in Fig. 5, using the first switching element S1 as the first transistor M1, the second switch element
S2 is second transistor M2, the 3rd switch element S3 is third transistor M3, the 4th switch element S4 is the 4th brilliant
It is further detailed exemplified by body pipe M4.But it should be recognized that in other exemplary embodiments of the disclosure, it is described to open
It can also be the other kinds of switch elements such as IGBT, double pole triode to close element, it is not limited to this example embodiment
In cited mode.
Shown in Fig. 5, in this example embodiment, the first diode D1 positive poles receive the input electricity
Signal VI is pressed, negative pole connects the first node N1；The second diode D2 positive poles receive the input voltage signal VI, bear
Pole connects the section point N2.The grid of the first transistor M1 connects the first node N1, and drain electrode receives described defeated
Enter voltage signal VI, source electrode connects the 3rd node N3.The grid of the second transistor M2 connects the section point N2,
Drain electrode connects the 3rd node N3, source electrode connection signal output part VO；The first transistor M1 and the second transistor
M2 channel type is opposite.For example, the first transistor M1 is P-type transistor, the second transistor M2 is N-type crystal
Pipe；Or the first transistor M1 is N-type transistor, the second transistor M2 is P-type transistor.3rd crystal
Pipe M3 grid receives the second pulse signal QB, and drain electrode is connected with the fourth node N4, and source electrode receives the power supply electricity
Press signal；The grid of the 4th transistor M4 receives the first pulse signal Q, and drain electrode is connected with the fourth node N4,
Source electrode receives the reset voltage signal；The third transistor M3 is opposite with the channel type of the 4th transistor M4.Example
Such as, the third transistor M3 is P-type transistor, and the 4th transistor M4 is N-type transistor；Or the 3rd crystal
Pipe M3 is N-type transistor, and the 4th transistor M4 is P-type transistor.It should be noted that in thin film transistor (TFT), drain electrode
It can generally be exchanged with source electrode；Therefore, the technical scheme obtained after the drain electrode of transistor and source electrode being exchanged, also belongs to this public affairs
The protection domain opened.
It is the first pulse signal Q, the second pulse in charge pump unit in this example embodiment with reference to shown in figure 6
Signal QB, first node N1 to fourth node N4 voltage signals VN1~VN4 and output signal VO waveform diagram.Wherein：
First pulse signal Q and the second pulse signal QB can be by clock generating circuit root as shown in Figure 7
Produced according to clock signal clk and enable signal EN.In the charging stage, i.e., when the first pulse signal Q and the second pulse signal
When QB is high potential, now first node N1 voltage VN1 is that (wherein VD is the first diode D1 electric conduction to VCC+VI-VD
Pressure), the first transistor M1 can have been made fully on (because VN1-VTH-VI>0, VTH is the first transistor M1 critical voltage),
Now the 3rd node N3 voltage VN3=VI.
Putting forward high voltage stage, i.e., when the first pulse signal Q and the second pulse signal QB are low potential, now the 3rd
Transistor M3 is turned on, fourth node N4 voltage VN4=VCC, therefore the 3rd node N3 voltage VN3 rises to VCC+VI, together
When second transistor M2 conducting, now output voltage VO be equal to the 3rd node N3 voltage VN3, as VCC+VI；If VI=
VCC, then VO=2 × VCC.
From the foregoing, it will be observed that the charge pump unit in this example embodiment, by setting the first to the second diode, first
To the second energy-storage travelling wave tube, first to fourth switch element and the first electric capacity so that two poles can be prestored in the charging stage
The conducting voltage of pipe, so as to carry high voltage stage leading using the conducting voltage counteracting diode for prestoring diode
The influence for the pressure that is powered, so can effectively improve charge pump unit can enlargement ratio.
Further, with reference to shown in figure 8, above-mentioned first energy storage can be realized in this example embodiment using transistor
Element ES1 and the second energy-storage travelling wave tube ES2.For example, the first energy-storage travelling wave tube ES1 includes the 5th transistor M5, the described 5th
Transistor M5 grid receives the first pulse signal Q, the source electrode of the 5th transistor M5 and drain electrode connection described the
One node N1.The second energy-storage travelling wave tube ES2 includes the 6th transistor M6, and the grid of the 6th transistor M6 receives described the
Two pulse signal QB, the 6th transistor M6 source electrode and drain electrode connect the section point N2.In this exemplary implementation
In example, the 5th transistor M5 can be P-type transistor or can be N-type transistor, likewise, the 6th transistor
M6 can be P-type transistor or can be N-type transistor.In this example embodiment, realized by using transistor above-mentioned
First energy-storage travelling wave tube ES1 and the second energy-storage travelling wave tube ES2, on the one hand, compared to using for conventional capacitive, can possess bigger
Specific capacitance amount, therefore under conditions of same capacitance amount, only need less chip area；On the other hand, it can prepared
Above-mentioned 5th transistor M5 and the 6th transistor M6 is prepared simultaneously during his transistor, chip processing procedure can be reduced and make institute
The photoetching process needed.
In addition, with continued reference to shown in Fig. 8, charge pump circuit described in this example embodiment can also include a filter
Ripple electric capacity CL.The first end of the filter capacitor CL connects the source electrode of the second transistor M2, and the of the filter capacitor CL
Two ends are grounded.By setting the filter capacitor CL to filter out the clutter in the output signal of the charge pump circuit, carry
Rise the accuracy of output signal.
Further, a kind of charge pump circuit is additionally provided in this example embodiment, the charge pump circuit includes
Any one above-mentioned charge pump unit.It is as needed can enlargement ratio difference, the electric charge of charge pump circuit cascade
Pump unit quantity would also vary from.With reference to shown in figure 9, when charge pump circuit includes the multistage charge pump unit
When, in addition to charge pump unit described in afterbody, the signal of the output of charge pump unit is next stage institute described in per one-level
State the input voltage signal of charge pump unit；The signal of the output of charge pump unit described in afterbody is charge pump
The voltage signal of pump circuit final output.Charge pump circuit in this example embodiment, the voltage of final output for N ×
VCC, effectively increasing can enlargement ratio.
Further, a kind of display device is additionally provided in this example embodiment.The display device includes display panel
And the drive module of drive signal is provided for the display panel；The drive module includes any one above-mentioned charge pump
Circuit.In the present exemplary embodiment, the display panel can be liquid crystal display panel or OLED display panel, in the disclosure
In other exemplary embodiments, the display panel is also likely to be PLED (Polymer Light-Emitting Diode, macromolecule
Light emitting diode) other flat boards such as display panel, PDP (Plasma Display Panel, plasma are shown) display panel show
Show panel, i.e., do not limit to the scope of application in this example embodiment especially.
The drive module for example can be one kind in source electrode driver, gate drivers and common voltage driver
It is or a variety of.When the drive module is source electrode driver, data-signal can be provided for above-mentioned display panel；When the driving
When module is gate drivers, scanning signal can be provided for above-mentioned display panel；When the drive module is driven for common electric voltage
During dynamic device, public voltage signal can be provided for above-mentioned display panel.Due to effectively increasing electric charge in this example embodiment
Pump circuit can enlargement ratio, reduce the decay of output signal, therefore the display effect of display device can be caused to obtain
Further lifting.
In summary, in this example embodiment by set the first to the second diode, the first to the second energy-storage travelling wave tube,
First to fourth switch element and the first electric capacity so that the conducting voltage of diode can be prestored in the charging stage, from
And influence of the high voltage stage using the conducting voltage for the conducting voltage counteracting diode for prestoring diode can be being proposed, enter
And can effectively improve charge pump unit can enlargement ratio.
The disclosure is described by above-mentioned related embodiment, but above-described embodiment is only the example for implementing the disclosure.
It must be noted that the embodiment disclosed is not limiting as the scope of the present disclosure.On the contrary, do not depart from the disclosure spirit and
In the range of the change and retouching made, belong to the scope of patent protection of the disclosure.
Claims (11)
- A kind of 1. charge pump unit, it is characterised in that including：One first diode, for receiving an input voltage signal and exporting to a first node；One first energy-storage travelling wave tube, the first end of first energy-storage travelling wave tube receive one first pulse signal, the first energy storage member Second end of part is connected with the first node；One second diode, for receiving the input voltage signal and exporting to a section point；One second energy-storage travelling wave tube, the first end of second energy-storage travelling wave tube receive one second pulse signal, the first energy storage member Second end of part is connected with the section point；One first switching element, turned on for responding the voltage signal of the first node so that the input voltage signal is defeated Go out to one the 3rd node；One second switch element, turned on for responding the voltage signal of the section point with by the voltage of the 3rd node Signal output is to signal output part；One the 3rd switch element, for responding second pulse signal and turning on so that a power supply voltage signal is exported to one Four nodes；One the 4th switch element, turned on for responding first pulse signal so that a reset voltage signal is exported to described Fourth node；One first electric capacity, is connected between the 3rd node and the fourth node.
- 2. charge pump unit according to claim 1, it is characterised in that wherein：First diode cathode receives the input voltage signal, and negative pole connects the first node；Second diode cathode receives the input voltage signal, and negative pole connects the section point；The first switching element is the first transistor, and the grid of the first transistor connects the first node, and drain electrode connects The input voltage signal is received, source electrode connects the 3rd node；The second switch element is second transistor, and the grid of the second transistor connects the section point, and drain electrode connects Connect the 3rd node, source electrode connection signal output part；The channel type phase of the first transistor and the second transistor Instead；3rd switch element is third transistor, and the grid of the third transistor receives second pulse signal, leakage Pole is connected with the fourth node, and source electrode receives the power supply voltage signal；4th switch element is the 4th transistor, and the grid of the 4th transistor receives first pulse signal, leakage Pole is connected with the fourth node, and source electrode receives the reset voltage signal；The third transistor and the 4th transistor Channel type it is opposite.
- 3. charge pump unit according to claim 2, it is characterised in that the first transistor and the 4th crystalline substance Body pipe is P-type transistor, and the second transistor and the third transistor are N-type transistor.
- 4. charge pump unit according to claim 2, it is characterised in that the first transistor and the 4th crystalline substance Body pipe is N-type transistor, and the second transistor and the third transistor are P-type transistor.
- 5. charge pump unit according to claim 2, it is characterised in that the charge pump circuit also includes：One filter capacitor, the first end of the filter capacitor connect the source electrode of the second transistor, and the of the filter capacitor Two ends are grounded.
- 6. the charge pump unit according to Claims 1 to 5 any one, it is characterised in that：First energy-storage travelling wave tube includes the 5th transistor, and the grid of the 5th transistor receives first pulse signal, The source electrode of 5th transistor and drain electrode connect the first node；Second energy-storage travelling wave tube includes the 6th transistor, and the grid of the 6th transistor receives second pulse signal, The source electrode of 6th transistor and drain electrode connect the section point.
- 7. charge pump unit according to claim 6, it is characterised in that the 5th transistor and the 6th crystalline substance Body pipe is P-type transistor or the 5th transistor and the 6th transistor is N-type transistor.
- 8. a kind of charge pump circuit, it is characterised in that including the charge pump according to claim 1~7 any one Unit.
- 9. charge pump circuit according to claim 8, it is characterised in that the charge pump circuit includes the more of cascade The level charge pump unit；Wherein, in addition to charge pump unit described in afterbody, charge pump unit described in per one-level The signal of output is the input voltage signal of charge pump unit described in next stage.
- 10. a kind of display device, including display panel and the drive module that drive signal is provided for the display panel；It is special Sign is that the drive module includes charge pump circuit according to claim 8 or claim 9.
- 11. the display device stated according to claim 10, it is characterised in that the drive module is source electrode driver, grid drive One or more in dynamic device and common voltage driver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610852454.0A CN107872151A (en) | 2016-09-26 | 2016-09-26 | Charge pump unit, charge pump circuit and display device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610852454.0A CN107872151A (en) | 2016-09-26 | 2016-09-26 | Charge pump unit, charge pump circuit and display device |
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| CN107872151A true CN107872151A (en) | 2018-04-03 |
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| CN112187040A (en) * | 2019-07-05 | 2021-01-05 | 台达电子国际（新加坡）私人有限公司 | Charging type charge pump with wide output voltage range |
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Application publication date: 20180403 |