CN107914211A - A kind of chemical and mechanical grinding method - Google Patents
A kind of chemical and mechanical grinding method Download PDFInfo
- Publication number
- CN107914211A CN107914211A CN201610886288.6A CN201610886288A CN107914211A CN 107914211 A CN107914211 A CN 107914211A CN 201610886288 A CN201610886288 A CN 201610886288A CN 107914211 A CN107914211 A CN 107914211A
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- China
- Prior art keywords
- lapping liquid
- tungsten
- grinding
- oxide
- ground
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- Pending
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- 238000000227 grinding Methods 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 69
- 239000000126 substance Substances 0.000 title claims abstract description 31
- 239000007788 liquid Substances 0.000 claims abstract description 171
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 77
- 239000010937 tungsten Substances 0.000 claims abstract description 77
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 77
- 238000005498 polishing Methods 0.000 claims abstract description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 17
- 239000000243 solution Substances 0.000 claims description 12
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 11
- 239000003054 catalyst Substances 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 239000006061 abrasive grain Substances 0.000 claims description 7
- 239000012670 alkaline solution Substances 0.000 claims description 7
- 239000007800 oxidant agent Substances 0.000 claims description 7
- 229910000519 Ferrosilicon Inorganic materials 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 6
- 239000007787 solid Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 239000007853 buffer solution Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 239000000047 product Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 229910001868 water Inorganic materials 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- -1 diacid Chemical class 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000009471 action Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- DKSMCEUSSQTGBK-UHFFFAOYSA-M bromite Chemical compound [O-]Br=O DKSMCEUSSQTGBK-UHFFFAOYSA-M 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003701 mechanical milling Methods 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- GJLXVWOMRRWCIB-MERZOTPQSA-N (2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-[[(2S)-2-acetamido-5-(diaminomethylideneamino)pentanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-5-(diaminomethylideneamino)pentanoyl]amino]-3-(1H-indol-3-yl)propanoyl]amino]-6-aminohexanoyl]amino]-6-aminohexanoyl]amino]-6-aminohexanoyl]amino]-6-aminohexanoyl]amino]-6-aminohexanoyl]amino]-6-aminohexanoyl]amino]-6-aminohexanamide Chemical compound C([C@H](NC(=O)[C@H](CCCN=C(N)N)NC(=O)C)C(=O)N[C@@H](CC=1C=CC(O)=CC=1)C(=O)N[C@@H](CCCN=C(N)N)C(=O)N[C@@H](CC=1C2=CC=CC=C2NC=1)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CCCCN)C(N)=O)C1=CC=C(O)C=C1 GJLXVWOMRRWCIB-MERZOTPQSA-N 0.000 description 1
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-M bromate Inorganic materials [O-]Br(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-M 0.000 description 1
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical group OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 229910001919 chlorite Inorganic materials 0.000 description 1
- 229910052619 chlorite group Inorganic materials 0.000 description 1
- QBWCMBCROVPCKQ-UHFFFAOYSA-N chlorous acid Chemical compound OCl=O QBWCMBCROVPCKQ-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002242 deionisation method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 description 1
- 229940043237 diethanolamine Drugs 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 description 1
- 235000011167 hydrochloric acid Nutrition 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 150000002505 iron Chemical class 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229960005137 succinic acid Drugs 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- YWYZEGXAUVWDED-UHFFFAOYSA-N triammonium citrate Chemical compound [NH4+].[NH4+].[NH4+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O YWYZEGXAUVWDED-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The present invention provides a kind of chemical and mechanical grinding method, for polishing tungsten, the described method comprises the following steps：Wafer to be ground is provided；The lapping liquid supply pipe pipe of first grinding table provides tungsten lapping liquid and the wafer is ground；The lapping liquid supply pipe pipe of second grinding table provides tungsten lapping liquid and the wafer is ground, wherein, the lapping liquid supply pipe pipe of at least described first grinding table and/or second grinding table also provides oxide lapping liquid.Ginding process according to the present invention, it is possible to reduce total lapping liquid consumption, saves the time, production efficiency is improved, and then improves the yield of product and the uptime of equipment, reduce cost, improves grinding efficiency and heterogencity, product yield is improved, reduces the tungsten plug damage in W CMP.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, in particular to a kind of chemical and mechanical grinding method.
Background technology
With the rapid development of super large-scale integration (ULSI, Ultra Large Scale Integration), collection
Become increasingly complex and finely into what circuit manufacturing process became.In order to improve integrated level, manufacture cost, the characteristic size of element are reduced
(Feature Size) constantly diminishes, and the number of elements in chip unit area is continuously increased, and plane routing has been difficult to meet member
The requirement of part high density distribution, can only use polylaminate wiring technique to utilize the vertical space of chip, further improve the collection of device
Into density.But the application of polylaminate wiring technique can cause substrate surface uneven, extremely disadvantageous to graphic making, for this reason, often
Need to carry out substrate surface planarisation (Planarization) processing.At present, chemical mechanical milling method or chemical machinery are flat
It is the best approach for reaching global planarizartion to change (CMP, Chemical Mechanical Polishing), especially in semiconductor
After manufacture craft enters sub-micron (sub-micron) field, it becomes an indispensable Manufacturing Techniques.
Chemical mechanical grinding (CMP) be using be mixed with the chemical solution of minimum abrasive particle and finished surface occur to chemically react come
Change the chemical bond on its surface, the product that generation easily mechanically removes, then remove chemical reactant through mechanical friction and obtain
Obtain the undamaged planarization surface of ultra-smooth.Cmp technology combines the advantage of chemical grinding and mechanical lapping.
Simple chemical grinding, surface accuracy is higher, and damage is low, and integrality is good, it is not easy to surface/sub-surface damage occurs, but grinds
Mill speed is slower, and material removal efficiency is relatively low, and for surface smoothness than relatively low, grinding comparison of coherence is poor；Simple mechanical lapping,
It is good to grind uniformity, surface smoothness is high, and grinding efficiency is high, but superficial layer/sub-surface layer damage, rough surface easily occurs
Angle value is than relatively low.The advantages of chemical mechanical grinding absorbs both each, can obtain while material removal efficiency is ensured
Smoother surface, obtained flatness will be higher by the 1-2 order of magnitude than merely using both grindings, and can realize and receive
Surface roughness of the meter level to atom level.
According to the difference of grinding object in grinding processing procedure, chemical mechanical milling method is broadly divided into：Silicon grinds (Silicon
CMP), Si oxide grinding (Silicon oxide CMP), carborundum grinding (Silicon carbide CMP), tungsten grinding
(W-CMP) and copper grinds (Cu-CMP).
In the prior art, when carrying out chemical mechanical grinding, same lapping liquid is used on same grinding table, and
Different lapping liquids is then used on different grinding tables.For example, a kind of scheme of polishing tungsten in common process is：
Ground 80 seconds using tungsten lapping liquid on one grinding table, ground 80 seconds using tungsten lapping liquid on the second grinding table,
Oxide lapping liquid grinding 100 seconds is used on 3rd grinding table, as shown in Figure 1.In W-CMP, make on same polishing block
With same lapping liquid, milling time is long, the problem of tungsten plug (W-Plug) damage often occurs, causes wafer loss, and
This can seriously affect product yield.
Therefore, it is necessary to a kind of new chemical and mechanical grinding method is proposed, to solve above-mentioned technical problem.
The content of the invention
A series of concept of reduced forms is introduced in Summary, this will in specific embodiment part into
One step describes in detail.The Summary of the present invention is not meant to attempt to limit technical solution claimed
Key feature and essential features, do not mean that the protection domain for attempting to determine technical solution claimed more.
In view of the deficiencies of the prior art, the present invention provides a kind of chemical and mechanical grinding method, for polishing tungsten, including
Following steps：Wafer to be ground is provided；The lapping liquid supply pipe pipe of first grinding table provide tungsten lapping liquid to the wafer into
Row grinding；The lapping liquid supply pipe pipe of second grinding table provides tungsten lapping liquid and the wafer is ground, wherein, at least institute
The lapping liquid supply pipe pipe for stating the first grinding table and/or second grinding table also provides oxide lapping liquid.
Further, the method further includes lapping liquid supply pipe pipe the 3rd lapping liquid of offer of the 3rd grinding table to the wafer
It is ground.
Further, the 3rd lapping liquid includes oxide lapping liquid.
Further, the tungsten lapping liquid and oxide lapping liquid are provided by different lapping liquid supply pipe pipes.
Further, the tungsten lapping liquid includes：Acid solution, abrasive grains and Fe-series catalyst.
Further, the oxide lapping liquid includes：Alkaline solution, abrasive grains, pH buffer solutions and oxidant.
Further, the Fe-series catalyst includes ferric nitrate and the ferrosilicon in nano-colloid state.
Further, the oxidant includes hydrogen peroxide or halate.
Further, the pH of the tungsten lapping liquid is 2-4, and the pH of the oxide lapping liquid is 10-12.
Further, the flow of the tungsten lapping liquid is 190-200ml/min, and the flow of the oxide lapping liquid is
140-150ml/min。
Further, the solid content of the tungsten lapping liquid is less than 4%, and the solid content of the oxide lapping liquid is more than
12%.
In conclusion method according to the invention it is possible to reduce total lapping liquid consumption, the saving time, improves production
Efficiency, and then improve the yield of product and the uptime of equipment, reduce cost, grinding efficiency and heterogencity are improved,
Product yield is improved, reduces the tungsten plug damage in W-CMP.
Brief description of the drawings
The drawings below of the present invention is used to understand the present invention in this as the part of the present invention.Shown in the drawings of this hair
Bright embodiment and its description, principle used to explain the present invention.
In attached drawing：
Fig. 1 is the schematic diagram being ground according to a kind of grinding scheme in common process；
Fig. 2 is the flow chart being ground according to the chemical and mechanical grinding method of the present invention；
Fig. 3 is the schematic diagram being ground according to the scheme of the embodiment of the present invention one；
When Fig. 4 changes for pH value in solution of the present invention, W, WO3、WO2And WO4 ‐Potential change schematic diagram；
Fig. 5 is the schematic diagram being ground according to the scheme of the embodiment of the present invention two；
Fig. 6 is the schematic diagram being ground according to the scheme of the embodiment of the present invention three；
Fig. 7 is that crystal column surface is ground at diverse location after the grinding measured according to the chemical and mechanical grinding method of the present invention
The thickness of film, and be contrasted with control group.
Embodiment
In the following description, a large amount of concrete details are given in order to provide more thorough understanding of the invention.So
And it is obvious to the skilled person that the present invention may not need one or more of these details and be able to
Implement.In other examples, in order to avoid with the present invention obscure, for some technical characteristics well known in the art not into
Row description.
In order to thoroughly understand the present invention, detailed step will be proposed in following description, to explain proposition of the present invention
A kind of chemical and mechanical grinding method.Obviously, execution of the invention is not limited to the technical staff of semiconductor applications and is familiar with
Specific details.Presently preferred embodiments of the present invention is described in detail as follows, but in addition to these detailed descriptions, the present invention can be with
With other embodiment.
It should be appreciated that when the term " comprising " and/or " including " is used in this specification, it is indicated described in presence
Feature, entirety, step, operation, element and/or component, but do not preclude the presence or addition of other one or more features, entirety,
Step, operation, element, component and/or combinations thereof.
The present invention proposes a kind of method of chemical mechanical grinding, as shown in Fig. 2, it includes following key step：
In step s 201, there is provided wafer to be ground；
In step S202, the lapping liquid supply pipe pipe of the first grinding table provides tungsten lapping liquid and the wafer is ground
Mill；
In step S203, the lapping liquid supply pipe pipe of the second grinding table provides tungsten lapping liquid and the wafer is ground
Mill,
Wherein, the lapping liquid supply pipe pipe of at least described first grinding table and/or second grinding table also provides oxide
Lapping liquid.
Ginding process according to the present invention, it is possible to reduce total lapping liquid consumption, saves the time, improves production efficiency,
And then improve the yield of product and the uptime of equipment, reduce cost, grinding efficiency and heterogencity are improved, improves production
Product yield, reduces the tungsten plug damage in W-CMP.
Embodiment one
Fig. 3 is the schematic diagram being ground according to the scheme of the embodiment of the present invention one, it includes following key step：
In step S301, two lapping liquid supply pipe pipes of the first grinding table provide tungsten lapping liquid and oxygen at the same time respectively
Compound lapping liquid, grinds 30 seconds；
In step s 302, the lapping liquid supply pipe pipe of the second grinding table provides tungsten lapping liquid and grinds 80 seconds；
In step S303, the lapping liquid supply pipe pipe of the 3rd grinding table provides oxide lapping liquid and grinds 100 seconds.
Wherein, in step S301, further include and provided by lapping liquid supply pipe pipe after tungsten lapping liquid grinds 20 seconds, spend from
Sub- water cleans 10 seconds；Further include in step S302, after grinding and cleaned 10 seconds with deionized water.
Lapping liquid in the present embodiment on the first grinding table is two kinds, the lapping liquid on the second grinding table and the 3rd grinding table
For one kind.
The pH of the tungsten lapping liquid is 2-4, wherein weight of the content of solid particle in the tungsten lapping liquid
Measure percentage and be less than 4%.The tungsten lapping liquid includes：Acid solution, abrasive grains and Fe-series catalyst.The acidity is molten
Liquid can select the saturated carboxylic acid such as the inorganic acids such as nitric acid, sulfuric acid, phosphoric acid, hydrochloric acid, formic acid, acetic acid, propionic acid, butyric acid, lactic acid, apple
The aromatic carboxylic acid such as the carboxylic acids such as acid, citric acid, phthalic acid, salicylic acid, oxalic acid, malonic acid, butanedioic acid, glutaric acid, oneself
The organic acid, preferably nitric acid and phosphoric acid such as the dicarboxylic acids such as diacid, fumaric acid, maleic acid, amino acid, heterocyclic carboxylic acid.It is described to grind
Abrasive particle includes：ZrO2、Al2O3、CaO、SiO2Deng the average grain diameter of abrasive grains is in the range of 30-300 nanometers.The iron
Series catalysts include ferric nitrate and the ferrosilicon in nano-colloid state.The content of wherein ferric nitrate is about 42%.
The pH of the oxide lapping liquid is 10-12, and wherein the content of solid particle is in the oxide chemistry lapping liquid
In percentage by weight be more than 12%.The lapping liquid includes alkaline solution, abrasive grains, pH buffer and oxidant.It is described
Alkaline solution can select the quaternary ammonium compounds such as ammonia, lithium hydroxide, potassium hydroxide, sodium hydroxide, tetramethyl-ammonium, monoethanolamine,
The organic amines such as ehtylethanolamine, diethanol amine, propane diamine, preferably potassium hydroxide, sodium hydroxide.The abrasive grains include
ZrO2、Al2O3、CaO、Fe2O3、MgO、SiO2、CeO2Deng wherein CeO2Content be about 1%.The pH buffer solutions include phosphoric acid
Hydrogen potassium, phthalate, ammonium citrate, ammonium phosphate and ammonium acetate.The oxidant includes hydrogen peroxide or halate, preferably
Hydrogen peroxide, the halate is bromate, the one or more in bromite, or in chlorate, chlorite
It is one or more.In addition, the polymer in the oxide chemistry lapping liquid also containing less than 1% acrylic acid derivative, its
For harmfulness component, remaining component is water.Tungsten lapping liquid is selected, the method according to the invention is ground, lapping liquid
PH value is 3, and it is 100 to grind selectivity (Selectivity of Removal, SER), grinding rate (Removal Rate, RR)
For 2866 (45 DEG C), heterogencity or unevenness (Non-uniformity, NU) are 4.2%, will be the results are shown in
In table 1.Wherein grinding selectivity is relative concept, and relative to the grinding film of certain component, grinding liquid energy preferably removes another
The grinding film of kind component, the value of grinding selectivity here is 100, it is a reference value, represents the removal of tungsten lapping liquid
The selectivity of tungsten, and the selectivity that other lapping liquids remove tungsten is required for relatively drawing with this value, value is more than 100, says
The selectivity that bright this lapping liquid removes tungsten is more preferable, and value is bigger, and selectivity is better；Conversely, selectivity is worse.Grinding rate refers to
The temperature of the change of institute's grinding crystal wafer surface grinding film thickness in unit interval, grinding rate and crystal column surface has substantial connection,
In general, temperature raises, and grinding rate is also bigger, but grinding rate increase to a certain extent when, grind the by-product of generation
The defects of thing can also increase severely, also result in surface scratches of wafer quantity also increases severely, and grinding rate mentioned in the present invention is 45
Measured at a temperature of DEG C.Since tungsten is light tight, the test of its thickness needs to be measured by the board of survey square resistance；It is uneven
Evenness refers to the standard deviation divided by grinding rate of grinding film thickness after grinding, and therefore, NU values are the smaller the better in theory, and NU values are got over
It is small, represent that the grinding rate of whole wafer surface each point is closer, and the residual defects of crystal column surface are also fewer.
1 tungsten lapping liquid of table is with oxide lapping liquid and tungsten lapping liquid using volume ratio as 1:5 be mixed to get grind
The contrast of the grinding effect of grinding fluid
The combination of oxide lapping liquid and tungsten lapping liquid is selected to be ground as lapping liquid, the method according to the invention
Mill, wherein tungsten lapping liquid and oxide lapping liquid are same by two different lapping liquid supply pipe pipes respectively in process of lapping
When spray to the surface of grinding pad after mix, rather than mix before the grinding.
When by the oxide lapping liquid (pH 10-12) containing alkaline solution and the tungsten lapping liquid (pH containing acid solution
For 2-4) mixing when, the pH value of solution is changed into 9 or so.Work as pH>When 4, following reaction will occur：
Fe(III/II)+OH-=Fe (OH)3 (1)
W+OH-=WO4 -(2),
And reacting (2) is formed by stacking by following reaction (3) and (4),
W(s)+3H2O→WO3(s)+6H++6e- (3)
WO3(s)+2OH-→WO4 2-+H2O (4)
When Fig. 4 changes for pH value in solution of the present invention, W, WO3、WO2And WO4 -Potential change schematic diagram, in figure
Abscissa is pH value, and ordinate is potential value (Potential), this potential value is relative to saturated calomel electrode
The current potential of (Saturated Calomel Electrode, SCE).Analysis is understood, in sour environment, in certain oxidant
Under the action of, W can be oxidized to WO3, that is, react (3)；In alkaline environment, WO3It is unstable, generate corresponding wolframic acid
Salt, that is, react (4).
Therefore, in alkaline solution, Fe-series catalyst can dissolve, and tungsten can then be corroded and be removed, in addition, instead
(1) and the relative size of reaction (2) the two reaction rates is answered to change with the change of time.
By oxide lapping liquid and tungsten lapping liquid using volume ratio as 1:5 are mixed to get lapping liquid, according to the invention
Method is ground, and the pH value of lapping liquid is 8.9, SER 506, RR for 2893 (45 DEG C), NU 4.0%, by it
The results are shown in Table 1.And pH value when selecting tungsten lapping liquid as lapping liquid is 3, SER 100, RR for 2866 (45 DEG C), NU 4.2%.By comparing it can be found that compared with tungsten lapping liquid is used as lapping liquid, work as oxide
Lapping liquid and tungsten lapping liquid are using volume ratio as 1:When 5 mixing are used as lapping liquid, grinding rate increase, grinding selectivity is more
Good, the value of unevenness reduces, and illustrates that the grinding performance to tungsten is more preferable, and the risk that tungsten plug comes off reduces.
Contained Fe-series catalyst is ferric nitrate and the ferrosilicon (FeSi) in nano-colloid state in tungsten lapping liquid,
By the mechanism that tungsten aoxidizes it is that fragrant east oxidation and nanometer are consolidated with the combination lapping liquid of tungsten lapping liquid and oxide lapping liquid
Body catalyst aoxidizes.Specifically, a part of Fe in ferric nitrate3+Can be by hydrogen peroxide (H2O2) it is oxidized to Fe2+, FeSi nanometre glues
Electronics (e is produced under the action of the thermal energy that body produces in chemical mechanical planarization process-) and hole (h+)。
In H2O2Under the action of, Fe2+、Fe3+、e-、h+Following reaction can occur with the intermediate product of reaction：
Fe2++H2O2→Fe3++·OH+OH- (5)
Fe3++H2O2→Fe2++HO2·+H+ (6)
Fe2++·OH→Fe3++OH- (7)
Fe3++HO2·→Fe2++O2+H+ (8)
·OH+H2O2→H2O+HO2· (9)
e-+H2O2→·OH+OH- (10)
e-+O2→O2·- (11)
2O2·-+2H2O→2·OH+2OH-+O2 (12)
2h++2OH-→2·OH (13)
The hydroxyl radical free radical (OH) produced in reaction process has strong oxidizing property, W can be oxidized to WO3, occur such as
Under reaction：
6·OH+W→WO3+3H2O (14)
Under the action of alkaline solution, the WO of generation3Corresponding tungstates (WO can further be formed4 2-), that is, react
(4).Potassium hydroxide or sodium hydroxide, hydroxide ion (OH therein are added in oxide lapping liquid-) can be ground with tungsten
W in grinding fluid reacts, and generates stable WO3Or WO4 2-, it is seen then that by the combination of oxide lapping liquid and tungsten lapping liquid
As lapping liquid, contribute to the grinding rate of stable prod, while improve product yield.In addition, oxide lapping liquid and metal
Tungsten lapping liquid can also be mixed with other ratios.
In the present embodiment, the milling apparatus for carrying out chemical mechanical grinding to wafer is grinder, it mainly includes：
The wafer is simultaneously pressed against the grinding pad by grinding table, the grinding pad for being fixed on the grinding table surface, the fixed wafer
On grinding head, for driving chuck that the grinding head rotates, supplying the lapping liquid supply pipe pipe of lapping liquid and to grinding pad
Spray the cleaning device of cleaning solution in surface.In the present invention, the rotating speed of the grinding table is 100-110rpm/min, the grinding
The rotating speed of head is 30-35rpm/min, and the rotating speed of the chuck is 30-35rpm/min, and the pressure of the chuck is 5-5.5psi,
The cleaning solution is deionized water, and the flow of the deionized water is 200-220mL/min.Wherein rpm is speed of rotation unit,
Its implication is revolution per minute；Psi is pressure unit, its implication is pound per square inch.
The flow of tungsten lapping liquid is 190-200mL/min in the present embodiment；The flow of oxide chemistry lapping liquid
For 140-150mL/min.It can be drawn after calculating, the total amount of chemical mechanical polishing of tungsten liquid is about needed for process of lapping
423mL, the total amount of required oxide chemistry lapping liquid is about 314mL, and the total amount of required lapping liquid is about 737mL, ground
The total time-consuming of journey is 250 seconds, is shown in Table 2.
And a kind of grinding scheme in common process is：Ground 80 seconds using tungsten lapping liquid on the first grinding table,
Ground 80 seconds using tungsten lapping liquid on the second grinding table, ground 100 seconds with oxide lapping liquid on the 3rd grinding table.
The flow set of lapping liquid can be drawn after calculating into identical with the flow of embodiment in the present invention one, needed in process of lapping
The total amount of tungsten lapping liquid be about 520mL, the total amount of required oxide lapping liquid is about 242mL, required lapping liquid
Total amount is about 762mL, and the total time-consuming of process of lapping is 260 seconds, is shown in Table 2.
Lapping liquid consumption when three kinds of embodiments of the present invention of table 2 are ground with common process and grind total time-consuming
Contrast
Compared with common process of the prior art, using the method for the embodiment of the present invention one, the total amount of required lapping liquid
Reduce about 3.3%, the total time-consuming of process of lapping has saved about 3.8%.As it can be seen that the method according to the invention, can be reduced always
Lapping liquid consumption, saves the time, improves production efficiency, and then improves the yield of product and the uptime of equipment, drop
Low cost.
In conclusion chemical and mechanical grinding method according to the present invention and lapping liquid, can reduce total lapping liquid consumption,
The time is saved, improves production efficiency, and then improves the yield of product and the uptime of equipment, reduce cost, raising is ground
Efficiency and heterogencity are ground, improves product yield, reduces the tungsten plug damage in W-CMP.
Embodiment two
The embodiment of the present invention two and the lapping liquid differed only on the first grinding table of embodiment one are one kind, and second grinds
It is two kinds to grind the lapping liquid on platform, and remainder is with reference to embodiment one, and details are not described herein.Fig. 5 is according to the embodiment of the present invention
The schematic diagram that two scheme is ground, it includes following key step：
In step S501, the lapping liquid supply pipe pipe of the first grinding table provides tungsten lapping liquid and grinds 80 seconds；
In step S502, two lapping liquid supply pipe pipes of the second grinding table provide tungsten lapping liquid and oxygen at the same time respectively
Compound lapping liquid, grinds 20 seconds；
In step S503, the lapping liquid supply pipe pipe of the 3rd grinding table provides oxide lapping liquid and grinds 100 seconds.
Wherein, in step S502, further include and provided by lapping liquid supply pipe pipe after tungsten lapping liquid grinds 30 seconds, spend from
Sub- water cleans 10 seconds.
It can be drawn after calculating, the total amount of chemical mechanical polishing of tungsten liquid is about 423mL needed for process of lapping, required
The total amount of oxide chemistry lapping liquid is about 290mL, and the total amount of required lapping liquid is about 713mL, and the total time-consuming of process of lapping is
240 seconds, it is shown in Table 2.
Compared with common process of the prior art, using the method for the embodiment of the present invention two, the total amount of required lapping liquid
Reduce about 6.4%, the total time-consuming of process of lapping has saved about 7.7%.
Embodiment three
The grinding differed only on the first grinding table and the second grinding table of the embodiment of the present invention three and embodiment one, two
Liquid is two kinds, and remainder is with reference to embodiment one, and details are not described herein.Fig. 6 be according to the embodiment of the present invention three scheme into
The schematic diagram of row grinding, it includes following key step：
In step s 601, two lapping liquid supply pipe pipes of the first grinding table provide tungsten lapping liquid and oxygen at the same time respectively
Compound lapping liquid, grinds 20 seconds；
In step S602, two lapping liquid supply pipe pipes of the second grinding table provide tungsten lapping liquid and oxygen at the same time respectively
Compound lapping liquid, grinds 20 seconds.
In step S603, the lapping liquid supply pipe pipe of the 3rd grinding table provides oxide lapping liquid and grinds 100 seconds.
Wherein, in step S601, after further including the grinding of lapping liquid supply pipe pipe offer tungsten lapping liquid 20 seconds, deionization is used
Water cleans 10 seconds；In step S602, after further including the grinding of lapping liquid supply pipe pipe offer tungsten lapping liquid 30 seconds, deionized water is used
Cleaning 10 seconds.
It can be drawn after calculating, the total amount of chemical mechanical polishing of tungsten liquid is about 293mL needed for process of lapping, required
The total amount of oxide chemistry lapping liquid is about 338mL, and the total amount of required lapping liquid is about 631mL, and the total time-consuming of process of lapping is
210 seconds, it is shown in Table 2.
Compared with common process of the prior art, using the method for the embodiment of the present invention three, the total amount of required lapping liquid
Reduce about 17.2%, the total time-consuming of process of lapping has saved about 19.2%.
Ginding process according to the present invention, can according to different grinding tables, different processing procedures and different product and form difference
Ginding process, these new methods will be helpful to improve product yield, reduce tungsten plug and come off, and then be later production and work
Skill provides multiple choices.
It should be noted that the purpose that three of the above embodiment is only for the purpose of illustration, those skilled in the art can be with
According to different grinding tables, different processing procedures and different product and form different Ginding process.
Fig. 7 is that crystal column surface is ground at diverse location after the grinding measured according to the chemical and mechanical grinding method of the present invention
The thickness of film, and be contrasted with control group.Since tungsten is light tight, the test of its thickness is by the board of survey square resistance
Measurement.Abscissa in Fig. 7 is the abscissa for 49 test points chosen along straight line, and ordinate is the wafer after grinding
Thickness, Test1 and Test2 are that obtained two test results, BL3 and BL4 are root after being ground according to the method for the present invention
After being ground according to the method for the prior art, obtained two test results.It is found after analysis that two songs with control group
Line is compared, and Ginding process according to the invention is ground, and the profile of two obtained curve is more smooth, and the wafer after grinding is more
It is thin, illustrate higher before grinding rate ratio, while heterogencity is also more preferable than before.This is further illustrated, using the present invention
Ginding process is ground, and can improve the grinding efficiency and heterogencity of grinding.
In conclusion chemical and mechanical grinding method according to the present invention, total lapping liquid consumption can be reduced, during saving
Between, production efficiency is improved, and then improve the yield of product and the uptime of equipment, reduce cost, improve grinding efficiency
And heterogencity, product yield is improved, reduces the tungsten plug damage in W-CMP.
The present invention is illustrated by above-described embodiment, but it is to be understood that, above-described embodiment is only intended to
Citing and the purpose of explanation, and be not intended to limit the invention in the range of described embodiment.In addition people in the art
Member is it is understood that the invention is not limited in above-described embodiment, teaching according to the present invention can also be made more kinds of
Variants and modifications, these variants and modifications are all fallen within scope of the present invention.Protection scope of the present invention by
The appended claims and its equivalent scope are defined.
Claims (11)
1. a kind of chemical and mechanical grinding method, for polishing tungsten, it is characterised in that comprise the following steps：There is provided to be ground
Wafer；The lapping liquid supply pipe pipe of first grinding table provides tungsten lapping liquid and the wafer is ground；Second grinding table
Lapping liquid supply pipe pipe provides tungsten lapping liquid and the wafer is ground, wherein, at least described first grinding table and/or institute
The lapping liquid supply pipe pipe for stating the second grinding table also provides oxide lapping liquid.
2. according to the method described in claim 1, it is characterized in that, the method further includes the lapping liquid supply pipe of the 3rd grinding table
Pipe provides the 3rd lapping liquid and the wafer is ground.
3. according to the method described in claim 2, it is characterized in that, the 3rd lapping liquid includes oxide lapping liquid.
4. according to the method described in claim 1, it is characterized in that, the tungsten lapping liquid and oxide lapping liquid are by not
What same lapping liquid supply pipe pipe provided.
5. method according to claim 1 or 2, it is characterised in that the tungsten lapping liquid includes：Acid solution, grind
Abrasive particle and Fe-series catalyst.
6. according to the method described in one of claim 1-3, it is characterised in that the oxide lapping liquid includes：Alkaline solution,
Abrasive grains, pH buffer solutions and oxidant.
7. according to the method described in claim 5, it is characterized in that, the Fe-series catalyst includes ferric nitrate and in nanometre glue
The ferrosilicon of body state.
8. according to the method described in claim 6, it is characterized in that, the oxidant includes hydrogen peroxide or halate.
9. according to the method described in one of claim 1-3, it is characterised in that the pH of the tungsten lapping liquid is 2-4, described
The pH of oxide lapping liquid is 10-12.
10. according to the method described in one of claim 1-3, it is characterised in that the flow of the tungsten lapping liquid is 190-
200ml/min, the flow of the oxide lapping liquid is 140-150ml/min.
11. according to the method described in one of claim 1-3, it is characterised in that the solid content of the tungsten lapping liquid is less than
4%, the solid content of the oxide lapping liquid is more than 12%.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20230162969A1 (en) * | 2020-04-23 | 2023-05-25 | Siltronic Ag | Method for grinding semiconductor wafers |
| CN117070148A (en) * | 2023-08-21 | 2023-11-17 | 河北工业大学 | Highly stable ceria polishing solution based on acetic acid-ammonium acetate buffer system |
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| US6287172B1 (en) * | 1999-12-17 | 2001-09-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for improvement of tungsten chemical-mechanical polishing process |
| CN103646866A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A chemical-mechanical polishing apparatus and a chemical-mechanical polishing method |
| CN103878678A (en) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | Wafer grinding and polishing method |
| CN104066807A (en) * | 2012-04-13 | 2014-09-24 | 优备材料有限公司 | Polishing slurry and method of polishing using the same |
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- 2016-10-11 CN CN201610886288.6A patent/CN107914211A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6287172B1 (en) * | 1999-12-17 | 2001-09-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for improvement of tungsten chemical-mechanical polishing process |
| CN104066807A (en) * | 2012-04-13 | 2014-09-24 | 优备材料有限公司 | Polishing slurry and method of polishing using the same |
| CN103878678A (en) * | 2012-12-20 | 2014-06-25 | 上海华虹宏力半导体制造有限公司 | Wafer grinding and polishing method |
| CN103646866A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A chemical-mechanical polishing apparatus and a chemical-mechanical polishing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20230162969A1 (en) * | 2020-04-23 | 2023-05-25 | Siltronic Ag | Method for grinding semiconductor wafers |
| CN117070148A (en) * | 2023-08-21 | 2023-11-17 | 河北工业大学 | Highly stable ceria polishing solution based on acetic acid-ammonium acetate buffer system |
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Application publication date: 20180417 |