CN107946427B - A kind of light-emitting diode chip for backlight unit with high-reflection region and highly conductive area's electrode - Google Patents

Abstract

The invention provides a light-emitting diode chip with electrodes in a high reflection region and a high conductivity region. The contact layer of the reflective electrode layer is composed of a first contact layer and a second contact layer covering the first contact layer. The first contact layer includes multiple A truncated region between a solid region and an adjacent solid region, so that the conductivity of the region of the reflective electrode layer corresponding to the solid region is higher than the conductivity of the region corresponding to the truncated region, which is a highly conductive region, and the region of the reflective electrode layer corresponding to the truncated region The reflectance of the region higher than that of the corresponding solid region is a high reflectance region, which further improves the light extraction and current diffusion capabilities while ensuring the ability of the reflective electrode layer to take into account both light extraction and current diffusion.

Description

A light-emitting diode chip with electrodes in highly reflective regions and highly conductive regions

technical field

The invention relates to the technical field of light-emitting diode chips, and more specifically, relates to a light-emitting diode chip with electrodes in a high reflection region and a high conductivity region.

Background technique

Light-emitting diodes are widely used in display devices and automotive interior lights due to their advantages such as high luminous efficiency, wide color range, low power consumption, long life, monochromatic light emission, fast response, impact resistance, and small size. In the fields of home appliance indicator lights, traffic signal lights, and household lighting, how to improve the performance of light-emitting diodes has become one of the main research directions for those skilled in the art. The existing light-emitting diode chips need to deposit an electrode layer after depositing a transparent conductive layer on the light-emitting epitaxial wafer. The existing electrode layer has developed the ability to take into account both light extraction and current diffusion. It is usually called a reflective electrode layer. Reflective electrodes The layers consist of a contact layer, a reflective layer, a barrier layer, and a solder layer. The reflectivity of the reflective electrode layer is mainly determined by its contact layer, and at the same time, the contact layer also affects the performance of current diffusion. Therefore, the design of the contact layer has become one of the main research directions for those skilled in the art.

Contents of the invention

In view of this, the present invention provides a light-emitting diode chip with a highly reflective region and a highly conductive region electrode, the contact layer of the reflective electrode layer is composed of a first contact layer and a second contact layer covering the first contact layer, the first The contact layer includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that the conductivity of the region of the reflective electrode layer corresponding to the solid region is higher than that of the region corresponding to the cut-off region, and the conductivity of the region of the reflective electrode layer corresponding to the solid region It is a highly conductive region, and the reflectivity of the region corresponding to the cut-off region of the reflective electrode layer is higher than that of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the cut-off region is a high-reflection region, thereby ensuring that the reflective electrode layer takes into account light extraction. At the same time as the ability of current diffusion, the ability of light extraction and current diffusion is further improved.

In order to achieve the above object, the technical scheme provided by the invention is as follows:

A light-emitting diode chip with electrodes in a high reflection region and a high conductivity region, comprising: a substrate; The epitaxial layer is away from the transparent conductive layer on the side of the substrate, and the light emitting diode chip also includes:

a reflective electrode layer located on the side of the light-emitting stack structure away from the substrate;

Wherein, the reflective electrode layer includes a first contact layer located on the side of the light-emitting stack structure away from the substrate, located on the side of the first contact layer away from the substrate, and covering the first contact layer, a reflective layer located on the side of the second contact layer away from the substrate, a barrier layer located on the side of the reflective layer away from the substrate, and a barrier layer located on the side of the reflective layer away from the substrate The welding layer on one side of the substrate, the first contact layer includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that the conductivity of the region of the reflective electrode layer corresponding to the solid regions is high Regarding the conductivity of the region corresponding to the cut-off region, the region of the reflective electrode layer corresponding to the physical region is a high-conductivity region, and the reflectance of the region of the reflective electrode layer corresponding to the cut-off region is higher than that corresponding to the The reflectivity of the region of the solid region, the region of the reflective electrode layer corresponding to the cut-off region is a high reflectivity region.

Optionally, the side of the light-emitting epitaxial layer away from the substrate has a P-type surface area and an N-type surface area, and the transparent conductive layer is located on the side of the light-emitting epitaxial layer away from the substrate and covers the P-type surface area;

And, the reflective electrode layer includes a P-type electrode located on the side of the transparent conductive layer away from the substrate and disposed on the P-type surface area, and a P-type electrode located on the side of the light-emitting epitaxial layer away from the substrate. , and an N-type electrode disposed on the N-type surface region.

Optionally, the P-type electrode includes a fixing portion and at least one extension portion extending toward the N-type electrode.

Optionally, the truncation area is located in a corresponding area of the extension part.

Optionally, the first contact layer corresponding to the fixing part includes:

A first hollow area and a first annular solid area surrounding the first hollow area, wherein the conductivity of the region of the P-type electrode corresponding to the first annular solid area is higher than that of the area corresponding to the first hollow area conductivity, the area of the P-type electrode corresponding to the first ring-shaped solid area is the high conductivity area, and the reflectance of the area of the P-type electrode corresponding to the first hollow area is higher than that corresponding to the first ring-shaped solid area. A reflectivity of the area of the annular solid area, the area of the P-type electrode corresponding to the first hollow area is the high reflection area.

Optionally, the first contact layer corresponding to the N-type electrode includes:

A second hollowed out area and a second ring-shaped solid area surrounding the second hollowed out area, wherein the conductivity of the region of the N-type electrode corresponding to the second ring-shaped solid region is higher than that of the region corresponding to the second hollowed out region conductivity, the area of the N-type electrode corresponding to the second annular solid area is the high conductivity area, and the reflectance of the area of the N-type electrode corresponding to the second hollow area is higher than that corresponding to the first The reflectivity of the area of the second ring-shaped solid area, the area of the N-type electrode corresponding to the second hollow area is the high reflection area.

Optionally, the thickness of the first contact layer is greater than the thickness of the second contact layer.

Optionally, the width of the second contact layer is not smaller than the width of the first contact layer.

Optionally, the material of the first contact layer and the second contact layer is any one of chromium, titanium and nickel.

Optionally, the length of the entity region is not greater than the length of the truncated region

Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:

The invention provides a light-emitting diode chip with electrodes in a high-reflection region and a high-conductivity region, comprising: a substrate; a light-emitting laminated structure located on one side of the substrate, the light-emitting laminated structure comprising a light-emitting epitaxial layer and A transparent conductive layer located on the side of the light-emitting epitaxial layer away from the substrate, and the light-emitting diode chip further includes: a reflective electrode layer located on the side of the light-emitting stacked structure away from the substrate; wherein, the reflective The electrode layer includes a first contact layer located on the side of the light emitting stack structure away from the substrate, a second contact located on the side of the first contact layer away from the substrate and covering the first contact layer layer, a reflective layer located on the side of the second contact layer away from the substrate, a barrier layer located on the side of the reflective layer away from the substrate, and a barrier layer located on the side of the reflective layer away from the substrate The welding layer, the first contact layer includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that the conductivity of the region of the reflective electrode layer corresponding to the solid regions is higher than that corresponding to the cut-off regions The conductivity of the area of the region, the region of the reflective electrode layer corresponding to the solid region is a high conductivity region, and the reflectivity of the region of the reflective electrode layer corresponding to the cut-off region is higher than that of the region corresponding to the solid region, The area reflectance of the reflective electrode layer corresponding to the cut-off area is a high reflective area.

As can be seen from the above, in the technical solution provided by the present invention, the contact layer of the reflective electrode layer is composed of a first contact layer and a second contact layer covering the first contact layer, and the first contact layer includes a plurality of solid regions and adjacent solid regions The truncation area between them makes the conductivity of the region corresponding to the solid region of the reflective electrode layer higher than the conductivity of the region corresponding to the truncation region, the region of the reflective electrode layer corresponding to the solid region is a high conductivity region, and the reflective electrode layer corresponds to the truncation region. The reflectivity of the region is higher than that of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the cut-off region is a high reflectivity region, thereby further improving the light extraction and current diffusion while ensuring the ability of the reflective electrode layer to take into account both light extraction and current diffusion. The ability to spread current.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only It is an embodiment of the present invention, and those skilled in the art can also obtain other drawings according to the provided drawings without creative work.

FIG. 1 is a schematic structural view of a light-emitting diode chip with electrodes in a highly reflective region and a highly conductive region provided in an embodiment of the present application;

FIG. 2 is a schematic structural diagram of another light-emitting diode chip with electrodes in a high reflection region and a high conductivity region provided by the embodiment of the present application;

Fig. 3 is a schematic structural diagram of another light-emitting diode chip with electrodes in a highly reflective region and a highly conductive region provided by the embodiment of the present application;

Fig. 4a is a schematic structural diagram of another light-emitting diode chip with electrodes in a high reflection region and a high conductivity region provided by the embodiment of the present application;

Fig. 4b is a sectional view along AA' direction in Fig. 4a.

Detailed ways

The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

As mentioned in the background technology, after the transparent conductive layer is deposited on the light-emitting epitaxial wafer in the existing light-emitting diode chip, an electrode layer needs to be deposited. The reflective electrode layer is composed of a contact layer, a reflective layer, a barrier layer and a welding layer. The reflectivity of the reflective electrode layer is mainly determined by its contact layer, and at the same time, the contact layer also affects the performance of current diffusion. Therefore, the design of the contact layer has become one of the main research directions for those skilled in the art.

Based on this, an embodiment of the present application provides a light-emitting diode chip with electrodes in a highly reflective region and a highly conductive region. The contact layer of the reflective electrode layer is composed of a first contact layer and a second contact layer covering the first contact layer. A contact layer includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that the conductivity of the region of the reflective electrode layer corresponding to the solid regions is higher than the conductivity of the region corresponding to the cut-off regions. The region of the reflective electrode layer corresponding to the solid region is a highly conductive region, and the reflectivity of the region of the reflective electrode layer corresponding to the truncated region is higher than the reflectivity of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the truncated region is a high reflective region, and then While ensuring the ability of the reflective electrode layer to take into account both light extraction and current diffusion, the light extraction and current diffusion capabilities are further improved. In order to achieve the above purpose, the technical solution provided by the embodiment of the present application is as follows, and the technical solution provided by the embodiment of the present application will be described in detail with reference to FIG. 1 to FIG. 4b.

Referring to FIG. 1, it is a schematic structural diagram of a light-emitting diode chip with electrodes in a high reflection region and a high conductivity region provided by an embodiment of the present application, wherein the light-emitting diode chip includes:

substrate 100;

A light-emitting stacked structure 200 located on one side of the substrate 100, the light-emitting stacked structure 200 includes a light-emitting epitaxial layer and a transparent conductive layer located on the side of the light-emitting epitaxial layer away from the substrate, the light-emitting diode The chip also includes:

A reflective electrode layer located on the side of the light-emitting laminated structure 200 away from the substrate 100;

Wherein, the reflective electrode layer includes a first contact layer 310 located on the side of the light-emitting laminated structure 200 away from the substrate 100 , located on the side of the first contact layer 310 away from the substrate 100 and covering The second contact layer 320 of the first contact layer 310, the reflective layer 330 located on the side of the second contact layer 320 away from the substrate 100, the reflective layer 330 located on the side away from the substrate 100 The barrier layer 340, and the welding layer 350 located on the side of the reflective layer 340 away from the substrate, the first contact layer 310 includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that The conductivity of the region of the reflective electrode layer corresponding to the solid region is higher than the conductivity of the region corresponding to the cut-off region, the region of the reflective electrode layer corresponding to the solid region is a high conductivity region 301, and the reflective The reflectivity of the region of the electrode layer corresponding to the truncated region is higher than the reflectivity of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the truncated region is the high reflection region 302 .

It can be seen from the above that in the technical solution provided by the embodiment of the present application, the contact layer of the reflective electrode layer is composed of a first contact layer and a second contact layer covering the first contact layer, and the first contact layer includes a plurality of solid regions and adjacent The cut-off region between the solid regions makes the conductivity of the region corresponding to the solid region of the reflective electrode layer higher than the conductivity of the region corresponding to the cut-off region, the region of the reflective electrode layer corresponding to the solid region is a high-conductivity region, and the reflective electrode layer corresponds to the cut-off region. The reflectivity of the region of the reflective electrode layer is higher than that of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the truncated region is a high reflective region, thereby ensuring that the reflective electrode layer can take into account both light extraction and current diffusion, and further improve the optical efficiency. Capability of extraction and current spreading.

In one embodiment of the present application, the light-emitting epitaxial layer provided in the present application has a P-type surface region and an N-type surface region, and both the P-type surface region and the N-type surface region of the light-emitting epitaxial layer need to be provided with an electrode. Therefore, the present application The reflective electrode layer provided in the embodiment is composed of two sub-electrodes, that is, the reflective electrode layer includes a P-type electrode and an N-type electrode, wherein both the P-type electrode and the N-type electrode can be formed with the above-mentioned structure to have high conductivity and high reflection area electrodes. Specifically, as shown in FIG. 2, it is a schematic structural diagram of another light-emitting diode chip with electrodes in a high-conductivity region and a high-reflection region provided by the embodiment of the present application, wherein the light-emitting diode chip includes:

substrate 100;

A light emitting stacked structure 200 located on one side of the substrate 100, the light emitting stacked structure 200 comprising a light emitting epitaxial layer 210 and a transparent conductive layer 220 located on the side of the light emitting epitaxial layer 210 away from the substrate 100, The light emitting diode chip also includes:

A reflective electrode layer located on the side of the light-emitting laminated structure 200 away from the substrate 100;

Wherein, the reflective electrode layer includes a first contact layer 310 located on the side of the light-emitting laminated structure 200 away from the substrate 100 , located on the side of the first contact layer 310 away from the substrate 100 and covering The second contact layer 320 of the first contact layer 310, the reflective layer 330 located on the side of the second contact layer 320 away from the substrate 100, the reflective layer 330 located on the side away from the substrate 100 The barrier layer 340, and the welding layer 350 located on the side of the reflective layer 340 away from the substrate, the first contact layer 310 includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that The conductivity of the region of the reflective electrode layer corresponding to the solid region is higher than the conductivity of the region corresponding to the cut-off region, the region of the reflective electrode layer corresponding to the solid region is a high conductivity region 301, and the reflective The reflectivity of the region of the electrode layer corresponding to the truncated region is higher than the reflectivity of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the truncated region is the high reflection region 302 .

In addition, the light-emitting epitaxial layer 210 provided in the embodiment of the present application has a P-type surface region 201 and an N-type surface region 202 on the side away from the substrate 100, and the transparent conductive layer 220 is located on the side away from the light-emitting epitaxial layer 210. One side of the substrate 100 and covering the P-type surface region 201;

And, the reflective electrode layer includes a P-type electrode 2011 located on the side of the transparent conductive layer 220 away from the substrate 100 and disposed on the P-type surface region 201, and a P-type electrode 2011 located on the side of the light-emitting epitaxial layer 210 away from the substrate 100. The N-type electrode 2012 on one side of the substrate 100 and disposed on the N-type surface region 202 .

In an embodiment of the present application, the light-emitting epitaxial layer provided in the present application may be the most basic light-emitting epitaxial layer, which includes an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer. Referring to FIG. 3 , it is a schematic structural diagram of another light-emitting diode chip with electrodes in a high-conductivity region and a high-reflection region provided by an embodiment of the present application, wherein the light-emitting diode chip includes:

substrate 100;

A light emitting stacked structure 200 located on one side of the substrate 100, the light emitting stacked structure 200 comprising a light emitting epitaxial layer 210 and a transparent conductive layer 220 located on the side of the light emitting epitaxial layer 210 away from the substrate 100, The light emitting diode chip also includes:

A reflective electrode layer located on the side of the light-emitting laminated structure 200 away from the substrate 100;

Wherein, the reflective electrode layer includes a first contact layer 310 located on the side of the light-emitting laminated structure 200 away from the substrate 100 , located on the side of the first contact layer 310 away from the substrate 100 and covering The second contact layer 320 of the first contact layer 310, the reflective layer 330 located on the side of the second contact layer 320 away from the substrate 100, the reflective layer 330 located on the side away from the substrate 100 The barrier layer 340, and the welding layer 350 located on the side of the reflective layer 340 away from the substrate, the first contact layer 310 includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that The conductivity of the region of the reflective electrode layer corresponding to the solid region is higher than the conductivity of the region corresponding to the cut-off region, the region of the reflective electrode layer corresponding to the solid region is a high conductivity region 301, and the reflective The reflectivity of the region of the electrode layer corresponding to the truncated region is higher than the reflectivity of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the truncated region is the high reflection region 302 .

The light-emitting epitaxial layer 210 provided in the embodiment of the present application has a P-type surface area and an N-type surface area on the side away from the substrate 100, and the transparent conductive layer 220 is located on the side of the light-emitting epitaxial layer 210 away from the substrate 100. one side, and covering the P-type surface area;

And, the reflective electrode layer includes a P-type electrode 2011 located on the side of the transparent conductive layer 220 away from the substrate 100 and disposed on the P-type surface area, and a P-type electrode 2011 located on the side of the light-emitting epitaxial layer 210 away from the An N-type electrode 2012 on one side of the substrate 100 and disposed on the N-type surface region.

Wherein, the light-emitting epitaxial layer 210 provided in the embodiment of the present application includes:

An N-type semiconductor layer 211 located on one side of the substrate 100;

The light-emitting layer 212 located on the side of the N-type semiconductor layer 211 away from the substrate 100;

a P-type semiconductor layer 213 located on a side of the light-emitting layer 212 away from the substrate 100;

And, a transparent conductive layer 220 located on the side of the P-type semiconductor layer 213 away from the substrate and in ohmic contact with the P-type semiconductor layer, wherein the P-type semiconductor layer 213 is away from the substrate 100- The side surface is the P-type surface area, and the surface of the light-emitting epitaxial layer 210 exposed to the N-type semiconductor layer 211 is the N-type surface area.

It should be noted that, in order to improve the performance of the flip-chip LED chip, the flip-chip LED chip provided by the embodiment of the present application may also include more optimized structural layers. It is enough for the layer to be the structural shape provided by any one of the above-mentioned embodiments.

Combining with the structure of the light emitting diode chip provided in any one of the above embodiments, its manufacturing method may include:

S1. Firstly, a light-emitting stack structure is formed on a substrate. Wherein, the substrate provided in the embodiment of the present application may include a substrate and a buffer layer formed on the substrate; the substrate provided in the embodiment of the present application may be a sapphire substrate, which is not specifically limited in the present application.

When the light-emitting epitaxial layer includes the most basic structure layer, after forming a buffer layer on the substrate, an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer are sequentially formed on the buffer layer. Then, the window of the light-emitting epitaxial layer is etched to expose the N-type semiconductor layer, so as to form the N-type surface region and the P-type surface region of the light-emitting epitaxial layer, wherein the etching process can adopt an ICP dry etching process.

Then, the surface of the light-emitting epitaxial layer facing away from the substrate adopts E-GUN or SPUTTER technology to deposit a transparent conductive film, which can be an indium tin oxide film; and then uses an etching process to etch the transparent conductive film to form a layer on the P-type surface. The transparent conductive layer in the area, and the transparent conductive material in the N-type surface area and other areas can be removed by wet etching process.

After the transparent conductive layer is formed, it is annealed to reduce the contact resistance between the transparent conductive layer and the P-type semiconductor layer to form an ohmic contact.

S2. Then form a reflective electrode layer on the side of the light-emitting stack structure away from the substrate, wherein the reflective electrode layer includes a P-type electrode formed on the P-type surface area and an N-type electrode formed on the N-type surface area.

The manufacturing process of the reflective electrode layer firstly forms the first contact layer on the side of the light-emitting stack structure away from the substrate, and the part of the first contact layer located on the P-type electrode and the part located on the N-type electrode are isolated from each other; then it is truncated, Multiple solid regions and multiple truncated regions are obtained. The application does not make specific restrictions on the specific truncated regions, and needs to be specifically designed according to actual applications.

Then, after the second contact layer is formed on the side of the first contact layer facing away from the substrate, a reflective layer, a barrier layer and a soldering layer are sequentially formed. Wherein, both the first contact layer and the second contact layer can be formed by E-GUN vapor deposition.

The present application does not specifically limit the pattern shape of the reflective electrode layer. In an embodiment of the present application, the P-type electrode provided in the present application may be a structure including pads and extended strips. Specifically shown in FIG. 4a and FIG. 4b, FIG. 4a is a schematic structural view of another light-emitting diode chip with a high reflection region and a high conductivity region electrode provided by the embodiment of the present application, and FIG. 4b is a view along the AA' direction in FIG. 4a Cutaway diagram. Wherein, the light-emitting diode chip provided in the embodiment of the present application includes:

A substrate 100, wherein the substrate 100 includes a substrate 110 and a buffer layer 120 located on the side of the substrate 110 facing the light-emitting stack structure 200;

A light emitting stacked structure 200 located on one side of the substrate 100, the light emitting stacked structure 200 comprising a light emitting epitaxial layer 210 and a transparent conductive layer 220 located on the side of the light emitting epitaxial layer 210 away from the substrate 100, The light emitting diode chip also includes:

A reflective electrode layer located on the side of the light-emitting laminated structure 200 away from the substrate 100;

Wherein, the reflective electrode layer includes a first contact layer 310 located on the side of the light-emitting laminated structure 200 away from the substrate 100 , located on the side of the first contact layer 310 away from the substrate 100 and covering The second contact layer 320 of the first contact layer 310, the reflective layer 330 located on the side of the second contact layer 320 away from the substrate 100, the reflective layer 330 located on the side away from the substrate 100 The barrier layer 340, and the welding layer 350 located on the side of the reflective layer 340 away from the substrate, the first contact layer 310 includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that The conductivity of the region of the reflective electrode layer corresponding to the solid region is higher than the conductivity of the region corresponding to the cut-off region, the region of the reflective electrode layer corresponding to the solid region is a high conductivity region 301, and the reflective The reflectivity of the region of the electrode layer corresponding to the truncated region is higher than the reflectivity of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the truncated region is the high reflection region 302 .

The light-emitting epitaxial layer 210 provided in the embodiment of the present application has a P-type surface area and an N-type surface area on the side away from the substrate 100, and the transparent conductive layer 220 is located on the side of the light-emitting epitaxial layer 210 away from the substrate 100. one side, and covering the P-type surface area;

And, the reflective electrode layer includes a P-type electrode 2011 located on the side of the transparent conductive layer 220 away from the substrate 100 and disposed on the P-type surface area, and a P-type electrode 2011 located on the side of the light-emitting epitaxial layer 210 away from the An N-type electrode 2012 on one side of the substrate 100 and disposed on the N-type surface region.

The light-emitting epitaxial layer 210 provided in the embodiment of the present application includes:

An N-type semiconductor layer 211 located on one side of the substrate 100;

The light-emitting layer 212 located on the side of the N-type semiconductor layer 211 away from the substrate 100;

a P-type semiconductor layer 213 located on a side of the light-emitting layer 212 away from the substrate 100;

And, a transparent conductive layer 220 located on the side of the P-type semiconductor layer 213 away from the substrate and in ohmic contact with the P-type semiconductor layer, wherein the P-type semiconductor layer 213 is away from the substrate 100- The side surface is the P-type surface area, and the surface of the light-emitting epitaxial layer 210 exposed to the N-type semiconductor layer 211 is the N-type surface area.

Wherein, the P-type electrode 2011 provided in the embodiment of the present application includes a fixing portion 2011 a and at least one extension portion 2011 b extending toward the N-type electrode 2012 . In an embodiment of the present application, the cut-off regions provided in the present application may all be located in corresponding regions of the extension portion 2011b.

And, in an embodiment of the present application, the first contact layer 310 provided in the present application corresponding to the fixing portion 2011a includes:

The first hollow area 511 and the first annular solid area 512 surrounding the first hollow area 511, wherein the conductivity of the region of the P-type electrode 2011 corresponding to the first annular solid area 512 is higher than that corresponding to the first annular solid area 512. The conductivity of the area of a hollowed out area 511, the area of the P-type electrode 2011 corresponding to the first ring-shaped solid area 512 is the high conductivity area, and the area of the P-type electrode corresponding to the first hollowed out area 511 The reflectivity of the P-type electrode is higher than that of the region corresponding to the first annular solid region 512, and the region of the P-type electrode corresponding to the first hollow region 511 is the high reflectivity region.

In an embodiment of the present application, the first contact layer 310 provided in the present application corresponding to the N-type electrode 2012 includes:

The second hollow area 521 and the second annular solid area 522 surrounding the second hollow area 521, wherein the conductivity of the N-type electrode 2012 corresponding to the second annular solid area 522 is higher than that corresponding to the second annular solid area 522. The conductivity of the area of the second hollow area 521, the area of the N-type electrode 2012 corresponding to the second ring-shaped solid area 522 is the high conductivity area, and the N-type electrode 2012 corresponds to the area of the second hollow area 521 The reflectivity of the region is higher than that of the region corresponding to the second annular solid region 522 , and the region of the N-type electrode 2012 corresponding to the second hollow region 521 is the high reflectivity region.

In any one of the above embodiments of the present application, the thickness of the first contact layer provided in the present application is greater than the thickness of the second contact layer. Wherein, since the thickness of each film layer is uniform, therefore, in the preferred embodiment of the present application, in the contact layer formed by the first contact layer and the second contact layer, the thickness of the part located in the high reflection area is the thickness of the part located in the high conductivity area. Two-thirds or less, inclusive of endpoint values.

In an embodiment of the present application, the width of the second contact layer provided in the embodiment of the present application is not smaller than the width of the first contact layer.

In any one of the above embodiments of the present application, the material of the first contact layer and the second contact layer provided in the present application is any one of chromium, titanium and nickel. The materials of the first contact layer and the second contact layer may be the same, and the materials of the first contact layer and the second contact layer may also be different, which is not specifically limited in this application.

And, in any one of the above-mentioned embodiments of the present application, the length of the entity region provided in the present application is not greater than the length of the cut-off region.

An embodiment of the present application provides a light-emitting diode chip with electrodes in a highly reflective region and a highly conductive region, including: a substrate; a light-emitting stack structure located on one side of the substrate, and the light-emitting stack structure includes layer and a transparent conductive layer on the side of the light-emitting epitaxial layer away from the substrate, and the light-emitting diode chip further includes: a reflective electrode layer on the side of the light-emitting stacked structure away from the substrate; wherein, the The reflective electrode layer includes a first contact layer located on the side of the light-emitting stack structure away from the substrate, a first contact layer located on the side of the first contact layer away from the substrate and covering the first contact layer. Two contact layers, a reflective layer located on the side of the second contact layer away from the substrate, a barrier layer located on the side of the reflective layer away from the substrate, and a barrier layer located on the side of the reflective layer away from the substrate The welding layer on the side, the first contact layer includes a plurality of solid regions and cut-off regions between adjacent solid regions, so that the conductivity of the region of the reflective electrode layer corresponding to the solid regions is higher than that of the corresponding solid regions. The conductivity of the region of the cut-off region, the region of the reflective electrode layer corresponding to the physical region is a high-conductivity region, and the reflectance of the region of the reflective electrode layer corresponding to the cut-off region is higher than that of the region corresponding to the physical region The reflectivity of the area, the area of the reflective electrode layer corresponding to the cut-off area is a high reflection area.

It can be seen from the above that in the technical solution provided by the embodiment of the present application, the contact layer of the reflective electrode layer is composed of a first contact layer and a second contact layer covering the first contact layer, and the first contact layer includes a plurality of solid regions and adjacent The cut-off region between the solid regions makes the conductivity of the region corresponding to the solid region of the reflective electrode layer higher than the conductivity of the region corresponding to the cut-off region, the region of the reflective electrode layer corresponding to the solid region is a high-conductivity region, and the reflective electrode layer corresponds to the cut-off region. The reflectivity of the region of the reflective electrode layer is higher than that of the region corresponding to the solid region, and the region of the reflective electrode layer corresponding to the truncated region is a high reflective region, thereby ensuring that the reflective electrode layer can take into account both light extraction and current diffusion, and further improve the optical efficiency. Capability of extraction and current spreading.

The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. a kind of light-emitting diode chip for backlight unit with high-reflection region and highly conductive area's electrode, comprising: substrate；Positioned at the substrate one The luminous laminated construction of side surface, the luminous laminated construction include light emitting epitaxial layer and are located at the light emitting epitaxial layer away from institute State the transparency conducting layer of one side of substrate, which is characterized in that the light-emitting diode chip for backlight unit further include:

Deviate from the reflection electrode layer of the one side of substrate positioned at the luminous laminated construction；

Wherein, the reflection electrode layer includes the first contact layer for deviating from the one side of substrate positioned at the luminous laminated construction, Positioned at first contact layer away from the one side of substrate and the second contact layer of covering first contact layer, it is located at described Second contact layer deviates from the reflecting layer of the one side of substrate, and the barrier layer of the one side of substrate is deviated from positioned at the reflecting layer, and Deviate from the welding layer of the one side of substrate positioned at the reflecting layer, first contact layer includes multiple entity areas and adjacent described Blocking district between entity area, so that the electric conductivity that the reflection electrode layer corresponds to the region in the entity area is higher than described in correspondence The electric conductivity in the region of blocking district, the reflection electrode layer corresponds to the region in the entity area as highly conductive area, and the reflection The reflectivity that electrode layer corresponds to the region of the blocking district is higher than the reflectivity in the region in the corresponding entity area, the reflection electricity The region of the corresponding blocking district of pole layer is high-reflection region.

2. the light-emitting diode chip for backlight unit according to claim 1 with high-reflection region and highly conductive area's electrode, feature exist In the light emitting epitaxial layer has p-type surface district and N-type surface district away from the one side of substrate, and the transparency conducting layer is located at The light emitting epitaxial layer is away from the one side of substrate and the covering p-type surface district；

And the reflection electrode layer includes being located at the transparency conducting layer away from the one side of substrate and being set to the p-type table The P-type electrode in face area, and deviate from the one side of substrate positioned at the light emitting epitaxial layer and be set to the N-type of the N-type surface district Electrode.

3. the light-emitting diode chip for backlight unit according to claim 2 with high-reflection region and highly conductive area's electrode, feature exist In the P-type electrode includes fixed part and at least one extension towards N-type electrode extension.

4. the light-emitting diode chip for backlight unit according to claim 3 with high-reflection region and highly conductive area's electrode, feature exist In the blocking district is located at the extension corresponding region.

5. the light-emitting diode chip for backlight unit according to claim 3 with high-reflection region and highly conductive area's electrode, feature exist In first contact layer, which corresponds at the fixed part, includes:

First vacancy section and first annular entity area around first vacancy section, wherein the P-type electrode corresponds to described the The electric conductivity in the region in one annular entity area is higher than the electric conductivity in the region of corresponding first vacancy section, the P-type electrode pair The region for answering the first annular entity area is the highly conductive area, and the P-type electrode corresponds to the area of first vacancy section The reflectivity in domain is higher than the reflectivity in the region in the corresponding first annular entity area, and the P-type electrode corresponds to described first and engraves The region of dead zone is the high-reflection region.

6. the light-emitting diode chip for backlight unit according to claim 2 with high-reflection region and highly conductive area's electrode, feature exist In first contact layer, which corresponds at the N-type electrode, includes:

Second vacancy section and the second annular entity area around second vacancy section, wherein the N-type electrode corresponds to described the The electric conductivity in the region in second ring entity area is higher than the electric conductivity in the region of corresponding second vacancy section, the N-type electrode pair The region for answering second annular entity area is the highly conductive area, and the N-type electrode corresponds to the area of second vacancy section The reflectivity in domain is higher than the reflectivity in the region in corresponding second annular entity area, and the N-type electrode corresponds to described second and engraves The region of dead zone is the high-reflection region.

7. the light-emitting diode chip for backlight unit according to claim 1 with high-reflection region and highly conductive area's electrode, feature exist In the thickness of first contact layer is greater than the thickness of second contact layer.

8. the light-emitting diode chip for backlight unit according to claim 1 with high-reflection region and highly conductive area's electrode, feature exist In the width of second contact layer is not less than the width of first contact layer.

9. the light-emitting diode chip for backlight unit according to claim 1 with high-reflection region and highly conductive area's electrode, feature exist In, the material of first contact layer and second contact layer be chromium, titanium, any one in nickel.

10. the light-emitting diode chip for backlight unit according to claim 1 with high-reflection region and highly conductive area's electrode, feature exist In the length in the entity area is not more than the length of blocking district.