CN107947775A - A kind of radio-frequency switch circuit for improving shut-off capacitance - Google Patents
A kind of radio-frequency switch circuit for improving shut-off capacitance Download PDFInfo
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- CN107947775A CN107947775A CN201711331995.XA CN201711331995A CN107947775A CN 107947775 A CN107947775 A CN 107947775A CN 201711331995 A CN201711331995 A CN 201711331995A CN 107947775 A CN107947775 A CN 107947775A
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- 230000003071 parasitic effect Effects 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 230000006872 improvement Effects 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 3
- 230000009467 reduction Effects 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 12
- 238000002955 isolation Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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Abstract
The invention discloses a kind of radio-frequency switch circuit for improving shut-off capacitance, including grid voltage control module, switch module and body pole tension control module, the switch module includes the switch element of multiple cascades, small capacitances are introduced between each switch element to ground path, the present invention is connected in parallel to ground or introduces the circuit design mode that controllable parasitic small capacitances back segment designs over the ground by carrying out small capacitances in circuit level, can optimize reduction shut-off capacitance Coff and be held on resistance Ron and is basically unchanged.
Description
Technical field
The present invention relates to a kind of radio-frequency switch circuit, more particularly to a kind of RF switch for improving shut-off capacitance (Coff)
Circuit.
Background technology
Fig. 1 is a kind of circuit diagram of radio-frequency switch circuit of the prior art.As shown in Figure 1, the radio frequency of the prior art is opened
Powered-down road includes grid voltage control module 10, switch module 20 and body pole tension control module 30, grid voltage control module
10 and body pole tension control module 30 be respectively made of a common bias resistance, switch module 20 by multiple cascades NMOS tube
M1, M2 ..., Mn, more individual pole biasing resistor Rbk, multiple gate bias resistor Rgk and multiple via resistance Rdsk groups
Into connection common bias resistance Rgc, Rbc between switch module 20 and grid-control voltage VG, body pole control voltage VB.
The prior art uses stack design, the product characterization RF switch electricity of its conducting resistance Ron and shut-off capacitance Coff
The radiofrequency characteristics on road：RonCoff=FoM
In the prior art due to having capacitance between each pole, so shut-off capacitance Coff is generally bigger, and capacitance is turned off
The reduction of Coff is most important to improving the radiofrequency characteristics such as RF switch isolation and harmonic wave.Usual device on-resistance Ron with
Shut-off capacitance Coff needs optimization design of compromising, and characterizes the radiofrequency characteristics of RF switching devices with its product FOM, and circuit layer
Secondary design and the parasitic FOM that would generally influence device.Therefore, it is really necessary to propose a kind of technological means, to solve above-mentioned ask
Topic.
The content of the invention
To overcome above-mentioned the shortcomings of the prior art, the purpose of the present invention is that providing a kind of improve turns off penetrating for capacitance
Frequency switching circuit its by carrying out small capacitances and being connected in parallel to ground or introduce controllable parasitic small capacitances back segment over the ground to design in circuit level
Circuit design mode, reduction shut-off capacitance Coff can be optimized and be held on resistance Ron and be basically unchanged.
In view of the above and other objects, the present invention proposes a kind of radio-frequency switch circuit for improving shut-off capacitance, including grid
Voltage control module, switch module and body pole tension control module, the switch module include the switch element of multiple cascades,
Small capacitances are introduced between each switch element to ground path.
Further, extremely the capacitance of source/drain/gate/substrate of the nmos switch pipe of each switch element is
Optional design.
Further, the source-drain electrode of each switch element of the switch module introduces small capacitances and is connected in parallel to ground path.
Further, each switch element includes nmos switch pipe Mk, body pole biasing resistor Rbk, gate bias resistor
Rgk, via resistance Rdsk, drain electrode shunt capacitance Cdpk, sources connected in parallel capacitance Cspk, one end connection of drain electrode shunt capacitance Cdpk
To the drain electrode of NMOS tube Mk, other end ground connection, one end of sources connected in parallel capacitance Cspk is connected to the source electrode of NMOS tube Mk, the other end
Ground connection, via resistance Rdsk are connected between drain electrode and the source electrode of NMOS tube Mk, and one end of body pole biasing resistor Rbk is connected to NMOS
The lining end of pipe Mk, the other end of body pole biasing resistor Rbk are connected to the body pole tension control module, gate bias resistor Rgk
One end be connected to the grid of nmos switch pipe Mk, the other end of gate bias resistor Rgk is connected to the grid voltage control
Module.
Further, the grid of each switch element of the switch module introduces small capacitances with substrate and leads to being connected in parallel to
Road.
Further, each switch element includes nmos switch pipe Mk, body pole biasing resistor Rbk, gate bias resistor
Rgk, via resistance Rdsk, drain electrode shunt capacitance Cdpk, sources connected in parallel capacitance Cspk, gate connected in parallel capacitance Cgpk and body pole
One end of shunt capacitance Cbpk, drain electrode shunt capacitance Cdpk are connected to the drain electrode of NMOS tube Mk, and the one of sources connected in parallel capacitance Cspk
End is connected to the source electrode of NMOS tube Mk, and one end of gate connected in parallel capacitance Cgpk is connected to the grid of nmos switch pipe Mk, and body pole is simultaneously
One end of connection capacitance Cbpk is connected to the substrate of nmos switch pipe Mk, the other end, the sources connected in parallel electricity of drain electrode shunt capacitance Cdpk
Hold the other end ground connection of the other end of Cspk, the other end of gate connected in parallel capacitance Cgpk, body pole shunt capacitance Cbpk, via resistance
Rdsk is connected between drain electrode and the source electrode of NMOS tube Mk, and one end of body pole biasing resistor Rbk is connected to the lining end of NMOS tube Mk, body
The other end of pole biasing resistor Rbk is connected to the body pole tension control module, and one end of gate bias resistor Rgk is connected to
The grid of nmos switch pipe Mk, the other end of gate bias resistor Rgk are connected to the grid voltage control module.
Further, the small capacitances size of introducing is 1~10fF.
Further, the small capacitances are the MIM capacitor or mos capacitance or MOM capacitor solid element of circuit design level.
Further, the small capacitances are the controllable parasitic capacitance unit introduced by back segment layout designs.
Further, the grid voltage control module and the body pole tension control module include common bias electricity
Resistance.
Compared with prior art, a kind of radio-frequency switch circuit for improving shut-off capacitance of the present invention passes through in stacked switch branch
Small capacitances small capacitances are introduced between level to be connected in parallel to ground or introduce controllable parasitic small capacitances over the ground, can optimize reduction shut-off capacitance Coff
And be held on resistance Ron and be basically unchanged, help to improve the isolation and Insertion Loss of RF switch.
Brief description of the drawings
Fig. 1 is a kind of circuit diagram of radio-frequency switch circuit of the prior art；
Fig. 2 is a kind of circuit structure diagram for the radio-frequency switch circuit first embodiment for improving shut-off capacitance of the present invention；
Fig. 3 is the equivalent circuit diagram of the radio-frequency switch circuit first embodiment of the improvement shut-off capacitance of the present invention；
Fig. 4 is a kind of circuit structure diagram for the radio-frequency switch circuit second embodiment for improving shut-off capacitance of the present invention；
Fig. 5 is the equivalent circuit diagram of the radio-frequency switch circuit second embodiment of the improvement shut-off capacitance of the present invention；
Fig. 6 is the prior art and the comparison schematic diagram of the shut-off capacitance Coff and conducting resistance Ron of the present invention.
Embodiment
Below by way of specific instantiation and embodiments of the present invention are described with reference to the drawings, those skilled in the art can
Understand the further advantage and effect of the present invention easily by content disclosed in the present specification.The present invention can also pass through other differences
Instantiation implemented or applied, the various details in this specification also can be based on different viewpoints with application, without departing substantially from
Various modifications and change are carried out under the spirit of the present invention.
Fig. 2 is a kind of circuit structure diagram for the radio-frequency switch circuit first embodiment for improving shut-off capacitance of the present invention, and Fig. 3 is
The equivalent circuit diagram of the radio-frequency switch circuit first embodiment of the improvement shut-off capacitance of the present invention.As shown in Figures 2 and 3, this hair
A kind of bright radio-frequency switch circuit for improving shut-off capacitance, including:Radio-frequency switch circuit includes grid voltage control module 10, switch
Module 20 and body pole tension control module 30.
Wherein, grid voltage control module 10 is made of the first common bias resistance Rgc, for establishing controlling switch module
The grid-control voltage VG of 20 on or off；Switch module 20 by multiple cascades switch element 201,202 ..., 20n groups
Into each switch element 20k is by nmos switch pipe Mk, body pole biasing resistor Rbk, gate bias resistor Rgk, via resistance
Rdsk, drain electrode shunt capacitance Cdpk, sources connected in parallel capacitance Cspk, composition (k=1,2 ... ..., n), in grid-control voltage
Radio-frequency input signals RFin is connected or is not attached to RF output end RFout under the control of VG and body pole control voltage VB；Body
Pole tension control module 30 is made of the second common bias resistance Rbc, for establishing 20 on or off of controlling switch module
Body pole control voltage VB.
N nmos switch unit 201 of switch module 20,202 ..., 20n cascade successively, i.e. radio-frequency input signals
RFin is connected to the drain electrode of the nmos switch pipe M1 of nmos switch unit 201, the source electrode of the nmos switch pipe M1 of nmos switch 201
The drain electrode of the nmos switch pipe M2 of nmos switch unit 202 is connected, the source electrode of the nmos switch pipe M2 of nmos switch unit 202 connects
Meet the drain electrode ... ... of the nmos switch pipe M3 of nmos switch unit 203, the nmos switch pipe M of nmos switch unit 20 (n-2)
(n-2) drain electrode of the nmos switch pipe M (n-1) of source electrode connection nmos switch unit 20 (n-1), 20 (n- of nmos switch unit
1) drain electrode of the nmos switch pipe Mn of the source electrode connection nmos switch unit 20n of nmos switch pipe M (n-1), nmos switch 20n
Nmos switch pipe Mn source electrode be RF switch output RFout, one end of drain electrode shunt capacitance Cdpk is connected to NMOS and opens
The drain electrode (k=1,2 ... ..., n) of pipe Mk is closed, one end of sources connected in parallel capacitance Cspk is connected to the source electrode (k of nmos switch pipe Mk
=1,2 ... ..., n), via resistance Rdsk is connected between the drain electrode of nmos switch pipe Mk and source electrode (k=1,2 ... ..., n), body
One end of pole biasing resistor Rbk is connected to the lining end (k=1,2 ... ..., n) of nmos switch pipe Mk, body pole biasing resistor Rbk (k
=1,2 ... ..., n) the other end be connected to one end of the second common bias resistance Rbc, the second common bias resistance Rbc's is another
One end, that is, body pole control voltage VB nodes, one end of gate bias resistor Rgk be connected to the grid of nmos switch pipe Mk (k=1,
2 ... ..., n), the other end of gate bias resistor Rgk (k=1,2 ... ..., n) is connected to the one of the first common bias resistance Rgc
End, the other end, that is, grid-control voltage VG nodes of the first common bias resistance Rgc.
The present invention is connected in parallel to ground path by introducing small capacitances in the source-drain electrode of switch module 20, maintains conducting resistance Ron
It is almost unchanged, reduction shut-off capacitance Coff can be optimized.
Usually, between source S/drain D of NMOS tube, grid G/substrate B there are bulky capacitor, accordingly can also by
G/B poles introduce small capacitances and are connected in parallel to ground path, and are equivalent to the introducing small capacitances between source S/drain D and are connected in parallel to ground path.Fig. 4
For a kind of circuit structure diagram for the radio-frequency switch circuit second embodiment for improving shut-off capacitance of the present invention, Fig. 5 is changing for the present invention
The equivalent circuit diagram of the radio-frequency switch circuit second embodiment of kind shut-off capacitance.As shown in Figures 4 and 5, the present invention is a kind of improves
The radio-frequency switch circuit of capacitance is turned off, including：Radio-frequency switch circuit includes grid voltage control module 10, switch module 20 and body
Pole tension control module 30.
Wherein, grid voltage control module 10 is made of the first common bias resistance Rgc, for establishing controlling switch module
The grid-control voltage VG of 20 on or off；Switch module 20 by multiple cascades switch element 201,202 ..., 20n groups
Into each switch element 20k is by NMOS tube Mk, body pole biasing resistor Rbk, gate bias resistor Rgk, via resistance Rdsk, leakage
Pole shunt capacitance Cdpk, sources connected in parallel capacitance Cspk, gate connected in parallel capacitance Cgpk and body pole shunt capacitance Cbpk compositions (k=
1,2 ... ..., n), for radio-frequency input signals RFin to be connected under the control of grid-control voltage VG and body pole control voltage VB
Meet or be not attached to RF output end RFout；Body pole tension control module 30 is made of the second common bias resistance Rbc, is used for
Establish the body pole control voltage VB of 20 on or off of controlling switch module.
N nmos switch unit 201 of switch module 20,202 ..., 20n cascade successively, i.e. radio-frequency input signals
RFin is connected to the drain electrode of the NMOS tube M1 of nmos switch unit 201, the source electrode connection of the NMOS tube M1 of nmos switch unit 201
The drain electrode of the NMOS tube M2 of nmos switch unit 202, the source electrode connection nmos switch list of the NMOS tube M2 of nmos switch unit 202
The drain electrode ... ... of the NMOS tube M3 of member 203, the source electrode connection NMOS of the NMOS tube M (n-2) of nmos switch unit 20 (n-2) are opened
Close the drain electrode of the NMOS tube M (n-1) of unit 20 (n-1), the source electrode connection of the NMOS tube M (n-1) of nmos switch unit 20 (n-1)
The drain electrode of the NMOS tube Mn of nmos switch unit 20n, the source electrode of the NMOS tube Mn of nmos switch unit 20n is the defeated of RF switch
Go out RFout, one end of drain electrode shunt capacitance Cdpk is connected to the drain electrode (k=1,2 ... ..., n) of NMOS tube Mk, sources connected in parallel electricity
The one end for holding Cspk is connected to the source electrode (k=1,2 ... ..., n) of NMOS tube Mk, and one end of gate connected in parallel capacitance Cgpk is connected to
The grid (k=1,2 ... ..., n) of NMOS tube Mk, one end of body pole shunt capacitance Cbpk are connected to the substrate (k=of NMOS tube Mk
1,2 ... ..., n), the other end, the other end, the gate connected in parallel capacitance of sources connected in parallel capacitance Cspk of drain electrode shunt capacitance Cdpk
The other end ground connection of the other end of Cgpk, body pole shunt capacitance Cbpk, via resistance Rdsk be connected to NMOS tube Mk drain electrode and
Between source electrode (k=1,2 ... ..., n), one end of body pole biasing resistor Rbk be connected to the lining end of NMOS tube Mk (k=1,2 ... ...,
N), the other end of body pole biasing resistor Rbk (k=1,2 ... ..., n) is connected to one end of the second common bias resistance Rbc, and second
The other end of common bias resistance Rbc, that is, body pole control voltage VB nodes, one end of gate bias resistor Rgk is connected to NMOS tube
The grid (k=1,2 ... ..., n) of Mk, gate bias resistor RgkIt is public inclined that the other end of (k=1,2 ... ..., n) is connected to first
Put one end of resistance Rgc, the other end, that is, grid-control voltage VG nodes of the first common bias resistance Rgc.
As it can be seen that the present invention is equivalent to introduce equivalent small capacitances radio frequency extremely path between stacked switch branch level, introducing
Small capacitances size is generally 1~10fF, and S/D/G/B to ground capacitance is optional design in the specific implementation, and small capacitances can be electricity
MIM, mos capacitance and the MOM capacitor solid element of road Design hierarchy, can also design the controllable of introducing by back segment layout
Parasitic capacitance unit.
Fig. 6 is the prior art and the comparison schematic diagram of the shut-off capacitance Coff and conducting resistance Ron of the present invention.It can be seen that leading
The resistance Ron that is powered almost remains unchanged on the premise of (in increase 2 ‰), and the present invention can be substantially reduced shut-off capacitance Coff, reduce
9%-25%, corresponding FOM also reduce 9%-25%, help to improve RF switch isolation and Insertion Loss.
In conclusion a kind of radio-frequency switch circuit for improving shut-off capacitance of the present invention between stacked switch branch level by drawing
Enter small capacitances small capacitances to be connected in parallel to ground or introduce controllable parasitic small capacitances over the ground, reduction shut-off capacitance Coff can be optimized and kept
Conducting resistance Ron is basically unchanged, and helps to improve RF switch isolation and Insertion Loss.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.Any
Field technology personnel can modify above-described embodiment and changed under the spirit and scope without prejudice to the present invention.Therefore,
The scope of the present invention, should be as listed by claims.
Claims (10)
1. a kind of radio-frequency switch circuit for improving shut-off capacitance, including grid voltage control module, switch module and body are extremely electric
Press control module, it is characterised in that：The switch module includes the switch element of multiple cascades, is introduced between each switch element small
Capacitance extremely path.
A kind of 2. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 1, it is characterised in that：Each switch is single
Extremely the capacitance of source/drain/gate/substrate of the nmos switch pipe of member is optional design.
A kind of 3. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 2, it is characterised in that：The switch module
Each switch element source-drain electrode introduce small capacitances be connected in parallel to ground path.
A kind of 4. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 3, it is characterised in that：Each switch element
Including nmos switch pipe Mk, body pole biasing resistor Rbk, gate bias resistor Rgk, via resistance Rdsk, drain electrode shunt capacitance
Cdpk, sources connected in parallel capacitance Cspk, one end of drain electrode shunt capacitance Cdpk are connected to the drain electrode of NMOS tube Mk, and the other end is grounded,
One end of sources connected in parallel capacitance Cspk is connected to the source electrode of NMOS tube Mk, other end ground connection, and via resistance Rdsk is connected to NMOS
Between the drain electrode of pipe Mk and source electrode, one end of body pole biasing resistor Rbk is connected to the lining end of NMOS tube Mk, body pole biasing resistor Rbk
The other end be connected to the body pole tension control module, one end of gate bias resistor Rgk is connected to nmos switch pipe Mk's
Grid, the other end of gate bias resistor Rgk are connected to the grid voltage control module.
A kind of 5. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 3, it is characterised in that：The switch module
Grid and the substrate of each switch element introduce small capacitances and be connected in parallel to ground path.
A kind of 6. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 5, it is characterised in that：Each switch element
Including nmos switch pipe Mk, body pole biasing resistor Rbk, gate bias resistor Rgk, via resistance Rdsk, drain electrode shunt capacitance
Cdpk, sources connected in parallel capacitance Cspk, gate connected in parallel capacitance Cgpk and body pole shunt capacitance Cbpk, drain electrode shunt capacitance Cdpk
One end be connected to the drain electrode of NMOS tube Mk, one end of sources connected in parallel capacitance Cspk is connected to the source electrode of NMOS tube Mk, and grid is simultaneously
One end of connection capacitance Cgpk is connected to the grid of nmos switch pipe Mk, and one end of body pole shunt capacitance Cbpk is connected to nmos switch
The substrate of pipe Mk, the other end, the other end, the gate connected in parallel capacitance Cgpk of sources connected in parallel capacitance Cspk of drain electrode shunt capacitance Cdpk
The other end, the other end ground connection of body pole shunt capacitance Cbpk, via resistance Rdsk is connected to drain electrode and the source electrode of NMOS tube Mk
Between, one end of body pole biasing resistor Rbk is connected to the lining end of NMOS tube Mk, and the other end of body pole biasing resistor Rbk is connected to institute
Body pole tension control module is stated, one end of gate bias resistor Rgk is connected to the grid of nmos switch pipe Mk, gate bias resistor
The other end of Rgk is connected to the grid voltage control module.
A kind of 7. radio-frequency switch circuit of improvement shut-off capacitance as described in claim 4 or 6, it is characterised in that：What is introduced is small
Capacitance size is 1~10fF.
A kind of 8. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 7, it is characterised in that：The small capacitances are
The MIM capacitor or mos capacitance or MOM capacitor solid element of circuit design level.
A kind of 9. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 7, it is characterised in that：The small capacitances are
The controllable parasitic capacitance unit introduced by back segment layout designs.
A kind of 10. radio-frequency switch circuit for improving shut-off capacitance as claimed in claim 1, it is characterised in that：The grid electricity
Pressure control module and the body pole tension control module include a common bias resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711331995.XA CN107947775A (en) | 2017-12-13 | 2017-12-13 | A kind of radio-frequency switch circuit for improving shut-off capacitance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711331995.XA CN107947775A (en) | 2017-12-13 | 2017-12-13 | A kind of radio-frequency switch circuit for improving shut-off capacitance |
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| CN107947775A true CN107947775A (en) | 2018-04-20 |
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| CN201711331995.XA Pending CN107947775A (en) | 2017-12-13 | 2017-12-13 | A kind of radio-frequency switch circuit for improving shut-off capacitance |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108933587A (en) * | 2018-06-20 | 2018-12-04 | 上海华虹宏力半导体制造有限公司 | A kind of RF switching unit and its radio-frequency switch circuit |
| CN108988876A (en) * | 2018-08-31 | 2018-12-11 | 上海华虹宏力半导体制造有限公司 | 5G communication radio frequency switching system |
| CN109104173A (en) * | 2018-07-20 | 2018-12-28 | 上海华虹宏力半导体制造有限公司 | A kind of RF switch ESD system |
| CN110808727A (en) * | 2019-10-29 | 2020-02-18 | 上海华虹宏力半导体制造有限公司 | Programmable capacitor array circuit |
| CN110808726A (en) * | 2019-10-29 | 2020-02-18 | 上海华虹宏力半导体制造有限公司 | Programmable capacitor array structure |
| CN111900970A (en) * | 2020-07-14 | 2020-11-06 | 上海华虹宏力半导体制造有限公司 | Antenna tuning switch and method for improving peak voltage thereof |
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