CN107968139B - Light Emitting Diode Structure - Google Patents
Light Emitting Diode Structure Download PDFInfo
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- CN107968139B CN107968139B CN201810015565.5A CN201810015565A CN107968139B CN 107968139 B CN107968139 B CN 107968139B CN 201810015565 A CN201810015565 A CN 201810015565A CN 107968139 B CN107968139 B CN 107968139B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 113
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 97
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 76
- 239000000758 substrate Substances 0.000 claims abstract description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 24
- 229910052782 aluminium Inorganic materials 0.000 claims description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 16
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract description 11
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- -1 Aluminum Tin Oxide Chemical compound 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
- H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
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Abstract
The invention provides a light emitting diode structure. The light emitting diode structure comprises a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer. The N-type semiconductor layer is arranged on the substrate. The light-emitting layer is suitable for emitting light with a main light-emitting wavelength of 365 nm to 490 nm and is arranged on the N-type semiconductor layer. The P-type semiconductor layer is disposed on the light emitting layer and includes a P-type AlGaN layer. The thickness of the P-type aluminum gallium nitride layer accounts for more than 85% of the thickness of the whole P-type semiconductor layer.
Description
The present application is a divisional application of an invention patent application entitled "light emitting diode structure" with application number "201410014540.5", which is filed on 13/1/2014 by the applicant.
Technical Field
The present invention relates to a semiconductor structure, and more particularly, to a light emitting diode structure.
Background
With the progress of semiconductor technology, the current led has high brightness, and the led has the advantages of power saving, small size, low voltage driving, and no mercury, so the led has been widely used in the fields of display and lighting. Generally, light emitting diodes are fabricated using wide band gap semiconductor materials, such as gallium nitride (GaN). However, when the light emitting layer of the led emits near-UV light or blue light, the P-type semiconductor layer formed by gan absorbs light with a wavelength of about 365-490 nm, i.e. absorbs the near-UV light and the blue light, thereby affecting the light emitting efficiency of the led.
Disclosure of Invention
The invention provides a light emitting diode structure which has better light emitting efficiency.
The light emitting diode structure comprises a substrate, an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer. The N-type semiconductor layer is arranged on the substrate. The light-emitting layer is suitable for emitting light with a main light-emitting wavelength of 365 nm to 490 nm and is arranged on the N-type semiconductor layer. The P-type semiconductor layer is disposed on the light emitting layer and includes a P-type AlGaN layer. The thickness of the P-type aluminum gallium nitride layer accounts for more than 85% of the thickness of the whole P-type semiconductor layer.
In an embodiment of the invention, the P-type semiconductor layer is a P-type aluminum gallium nitride layer.
In an embodiment of the invention, the P-type semiconductor layer further includes a P-type gallium nitride layer disposed on the P-type aluminum gallium nitride layer. The thickness of the P-type gallium nitride layer accounts for 15% or less of the thickness of the entire P-type semiconductor layer.
In an embodiment of the invention, the P-type aluminum gallium nitride layer includes a first P-type aluminum gallium nitride layer and a second P-type aluminum gallium nitride layer. The aluminum content in the first P-type aluminum gallium nitride layer is different from the aluminum content in the second P-type aluminum gallium nitride layer.
In an embodiment of the invention, the first P-type aluminum gallium nitride layer is located between the second P-type aluminum gallium nitride layer and the light emitting layer, and an aluminum content in the first P-type aluminum gallium nitride layer is greater than an aluminum content in the second P-type aluminum gallium nitride layer.
In an embodiment of the invention, the material of the first P-type algan layer is AlxGa1-xN, and x is 0.09-0.2.
In an embodiment of the invention, the material of the second P-type aluminum gallium nitride layer is AlyGa1-yN, and y is 0.01 to 0.15.
In an embodiment of the invention, a thickness of the second P-type aluminum gallium nitride layer is greater than a thickness of the first P-type aluminum gallium nitride layer.
In an embodiment of the invention, a P-type doping concentration of the first P-type aluminum gallium nitride layer is greater than a P-type doping concentration of the second P-type aluminum gallium nitride layer.
In an embodiment of the invention, the P-type semiconductor layer further includes a P-type algan layer disposed between the P-type algan layer and the light emitting layer.
In an embodiment of the invention, the N-type semiconductor layer is an N-type gallium nitride layer.
In an embodiment of the invention, the led structure further includes an N-type electrode and a P-type electrode. The N-type electrode is arranged on the N-type semiconductor layer which is not covered by the light emitting layer and is electrically connected with the N-type semiconductor layer. The P-type electrode is disposed on the P-type semiconductor layer and electrically connected with the P-type semiconductor layer.
In an embodiment of the invention, the light emitting diode structure further includes a transparent conductive layer disposed on the P-type semiconductor layer.
Based on the above, since the thickness of the P-type aluminum gallium nitride layer of the present invention accounts for 85% or more of the thickness of the entire P-type semiconductor layer, the P-type semiconductor layer can reduce absorption of near UV light or blue light emitted from the light emitting layer. Therefore, the light emitting diode structure of the invention has better light emitting efficiency.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a schematic cross-sectional view of a light emitting diode structure according to an embodiment of the invention;
FIG. 2 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention;
fig. 6 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention.
Description of reference numerals:
100a, 100b, 100c, 100d, 100e, 100 f: a light emitting diode structure;
110: a substrate;
120: an N-type semiconductor layer;
130: a light emitting layer;
140a, 140b, 140c, 140d, 140 e: a P-type semiconductor layer;
142a, 142b, 142 d: a P-type aluminum gallium nitride layer;
142c1, 142e 1: a first P-type aluminum gallium nitride layer;
142c2, 142e 2: a second P-type aluminum gallium nitride layer;
144 b: a P-type gallium nitride layer;
144d, 144 e: a P-type aluminum indium gallium nitride layer;
150: an N-type electrode;
160: a P-type electrode;
170: a transparent conductive layer;
t1, T2: and (4) thickness.
Detailed Description
Fig. 1 is a schematic cross-sectional view illustrating a light emitting diode structure according to an embodiment of the invention. Referring to fig. 1, in the present embodiment, a light emitting diode structure 100a includes a substrate 110, an N-type semiconductor layer 120, a light emitting layer 130, and a P-type semiconductor layer 140 a. The N-type semiconductor layer 120 is disposed on the substrate 110. The light-emitting layer 130 is adapted to emit light with a main light-emitting wavelength between 365 nm and 490 nm and is disposed on the N-type semiconductor layer 120. The P-type semiconductor layer 140a is disposed on the light-emitting layer 130 and includes a P-type aluminum gallium nitride layer 142 a. The thickness of the P-type aluminum gallium nitride layer 142a accounts for 85% or more of the thickness of the entire P-type semiconductor layer 140 a.
In detail, in the present embodiment, the substrate 110 is, for example, a sapphire substrate, and the light emitting layer 130 is, for example, a gallium nitride/indium gallium nitride quantum well structure, but not limited thereto. The N-type semiconductor layer 120 is located between the substrate 110 and the light emitting layer 130, and a portion of the N-type semiconductor layer 120 is exposed outside the light emitting layer 130. Here, the N-type semiconductor layer 120 is specifically an N-type gallium nitride layer. As shown in fig. 1, the P-type semiconductor layer 140a of the present embodiment is specifically a P-type aluminum gallium nitride layer 142a, i.e., the entire P-type semiconductor layer 140a is formed of a single material, i.e., aluminum gallium nitride. Preferably, the thickness of the P-type aluminum gallium nitride layer 142a is 30 nm to 100 nm. In addition, the light emitting diode structure 100a of the present embodiment further includes an N-type electrode 150 and a P-type electrode 160, wherein the N-type electrode 150 is disposed on the N-type semiconductor layer 120 not covered by the light emitting layer 130 and electrically connected to the N-type semiconductor layer 120, and the P-type electrode 160 is disposed on the P-type semiconductor layer 140a and electrically connected to the P-type semiconductor layer 140 a. From the above configuration, the led structure 100a of the present embodiment is specifically a blue led structure.
Since the P-type semiconductor layer 140a is specifically a P-type aluminum gallium nitride layer 142a in this embodiment, and the material characteristics of the P-type aluminum gallium nitride layer 142a do not absorb light in the near-UV or blue wavelength band. Therefore, when the light emitting layer 130 emits light, the light can directly pass through the P-type semiconductor layer 140a and is not absorbed. In this way, the led structure 100a of the present embodiment has a better light emitting efficiency.
It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Fig. 2 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention. Referring to fig. 2, the led structure 100b of the present embodiment is similar to the led structure 100a of fig. 1, but the main difference between them is: the P-type semiconductor layer 140b of the present embodiment is composed of a P-type aluminum gallium nitride layer 142b and a P-type gallium nitride layer 144b, wherein the P-type gallium nitride layer 144b is disposed on the P-type aluminum gallium nitride layer 142 b. In particular, in the present embodiment, the thickness of the P-type aluminum gallium nitride layer 142b accounts for 85% or more of the thickness of the entire P-type semiconductor layer 140b, in other words, the thickness of the P-type gallium nitride layer 144b accounts for 15% or less of the thickness of the entire P-type semiconductor layer 140 b. Preferably, the P-type gallium nitride layer 144b has a thickness of less than 10 nm.
Since the thickness of the P-type algan layer 142b in this embodiment is more than 85% of the thickness of the entire P-type semiconductor layer 140b, the material property of the P-type algan layer 142b does not absorb the light in the blue wavelength band. It is known from Beer-Lambert law that when a beam of parallel monochromatic light passes perpendicularly through a uniform, non-scattering, light-absorbing substance, the absorbance is proportional to the concentration of the light-absorbing substance and the thickness of the absorbing layer. Therefore, when the light emitting layer 130 emits light, the P-type gallium nitride layer 144b absorbing blue light is much thinner than the P-type aluminum gallium nitride layer 142b, so that the P-type semiconductor layer 140b can reduce the absorption of near UV light or blue light emitted by the light emitting layer 130. As such, the led structure 100b of the present embodiment has a better light emitting efficiency.
Fig. 3 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention. Referring to fig. 3, the led structure 100c of the present embodiment is similar to the led structure 100a of fig. 1, but the main difference between them is: the P-type semiconductor layer 140c of the present embodiment is specifically a P-type aluminum gallium nitride layer, wherein the P-type aluminum gallium nitride layer includes a first P-type aluminum gallium nitride layer 142c1 and a second P-type aluminum gallium nitride layer 142c2, and the aluminum content in the first P-type aluminum gallium nitride layer 142c1 is different from the aluminum content in the second P-type aluminum gallium nitride layer 142c 2. Preferably, the first P-type aluminum gallium nitride layer 142c1 is located between the second P-type aluminum gallium nitride layer 142c2 and the light emitting layer 130, and the content of aluminum in the first P-type aluminum gallium nitride layer 142c1 is greater than the content of aluminum in the second P-type aluminum gallium nitride layer 142c 2. Here, the material of the first P-type algan layer 142c1 is AlxGa1-xN, wherein x is 0.09-0.2. The second P-type AlGaN layer 142c2 is made of AlyGa1-yN, wherein y is 0.01-0.15. The thickness T2 of the second P-type aluminum gallium nitride layer 142c2 is greater than the thickness T1 of the first P-type aluminum gallium nitride layer 142c 1.
It should be noted that the P-type algan layer can reduce light absorption, but if the content of aluminum in the P-type algan layer is too high, more epitaxial defects will cause the loss of composite carriers and increase the heat inside the led structure. Furthermore, the increase of the aluminum content in the P-type AlGaN layer has another effect, which increases the resistance of the P-type AlGaN layer and makes the electrode manufacturing more difficult. Therefore, in the led structure 100c of the present embodiment, the first P-type aluminum gallium nitride layer 142c1 close to the light emitting layer 130 has a high aluminum content, a larger bandgap (bandgap), and a better electron blocking effect, and electrons that do not fall into the light emitting layer 130 can be rebounded into the light emitting layer 130, so as to increase the light efficiency. In addition, the thickness T1 of the first P-type algan layer 142c1 is thin, so that epitaxial defects caused by high aluminum content can be reduced.
In addition, the P-type doping concentration in the first P-type aluminum gallium nitride layer 142c1 of the present embodiment is greater than the P-type doping concentration of the second P-type aluminum gallium nitride layer 142c 2. The P-type gan layer 142c1 is closer to the light-emitting layer 130, and the holes easily enter the light-emitting layer 130, so that the holes and the electrons meet and join in the light-emitting layer 130, and are released in the form of photons.
Fig. 4 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention. Referring to fig. 4, the led structure 100d of the present embodiment is similar to the led structure 100a of fig. 1, but the main difference between the two structures is: the P-type semiconductor layer 140d of the present embodiment is composed of a P-type aluminum gallium nitride layer 142d and a P-type aluminum gallium indium nitride layer 144d, wherein the P-type aluminum gallium indium nitride layer 144d is disposed between the P-type aluminum gallium nitride layer 142d and the light emitting layer 130. In the present embodiment, the P-type algan layer 144d can alleviate the lattice mismatch between the P-type algan layer 142d and the light emitting layer 130, and can reduce the stress generated during epitaxy of the led structure 100 d.
Fig. 5 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention. Referring to fig. 5, the led structure 100e of the present embodiment is similar to the led structure 100a of fig. 1, but the main difference between the two structures is: the P-type semiconductor layer 140e of the present embodiment is composed of a first P-type aluminum gallium nitride layer 142e1, a second P-type aluminum gallium nitride layer 142e2, and a P-type aluminum gallium nitride layer 144 e. The aluminum content in the first P-type aluminum gallium nitride layer 142e1 is different from the aluminum content in the second P-type aluminum gallium nitride layer 142e2, and preferably, the material of the first P-type aluminum gallium nitride layer 142e1 is AlxGa1-xN, wherein x is 0.09-0.2, and the material of the second P-type AlGaN layer 142e2 is AlyGa1-yN, wherein y is 0.01-0.15. The first P-type AlGaN layer 142e1 and the second P-type AlGaN layer 142e2 have different aluminum contents, so that light absorption can be avoided, and the problems of epitaxial defects and high resistance can be reduced. The first P-type AlGaN layer 142e1 is disposed between the second P-type AlGaN layer 142e2 and the P-type AlGaN layer 144e, and the P-type aluminum indium gallium nitride layer 144e directly contacts the light emitting layer 130. The P-type algan layer 144e can alleviate the lattice mismatch between the first P-type algan layer 142e1 and the light emitting layer 130, thereby reducing the stress generated during epitaxy of the led structure 100 e.
Fig. 6 is a schematic cross-sectional view of a light emitting diode structure according to another embodiment of the present invention. Referring to fig. 6, the led structure 100f of the present embodiment is similar to the led structure 100a of fig. 1, but the main difference between the two structures is: the led structure 100f of the present embodiment further includes a transparent conductive layer 170, wherein the transparent conductive layer 170 is disposed on the P-type semiconductor layer 140a and located between the P-type semiconductor layer 140a and the P-type electrode 160. The P-type semiconductor layer 140a may form a good ohmic contact (ohmic contact) with the P-type electrode 160 through the transparent conductive layer 170. Here, the material of the transparent conductive layer 170 is, for example, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), zinc oxide (ZnO), Indium Tin Zinc Oxide (ITZO), Aluminum Tin Oxide (ATO), Aluminum Zinc Oxide (AZO), or other suitable transparent conductive materials.
In summary, since the thickness of the P-type aluminum gallium nitride layer of the present invention accounts for more than 85% of the thickness of the entire P-type semiconductor layer, the P-type semiconductor layer can reduce the absorption of the near UV light or blue light emitted by the light emitting layer. Therefore, the light emitting diode structure of the invention has better light emitting efficiency.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810015565.5A CN107968139B (en) | 2014-01-13 | 2014-01-13 | Light Emitting Diode Structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810015565.5A CN107968139B (en) | 2014-01-13 | 2014-01-13 | Light Emitting Diode Structure |
| CN201410014540.5A CN104779328B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode structure |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410014540.5A Division CN104779328B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode structure |
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| CN107968139A CN107968139A (en) | 2018-04-27 |
| CN107968139B true CN107968139B (en) | 2021-10-01 |
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| CN201810015565.5A Expired - Fee Related CN107968139B (en) | 2014-01-13 | 2014-01-13 | Light Emitting Diode Structure |
| CN201410014540.5A Expired - Fee Related CN104779328B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode structure |
| CN201810016160.3A Expired - Fee Related CN108054255B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode structure |
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| CN201410014540.5A Expired - Fee Related CN104779328B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode structure |
| CN201810016160.3A Expired - Fee Related CN108054255B (en) | 2014-01-13 | 2014-01-13 | Light emitting diode structure |
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| CN105514233B (en) * | 2015-11-30 | 2017-12-15 | 华灿光电股份有限公司 | High-luminous-efficiency LED epitaxial slice and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6319742B1 (en) * | 1998-07-29 | 2001-11-20 | Sanyo Electric Co., Ltd. | Method of forming nitride based semiconductor layer |
| JP3567790B2 (en) * | 1999-03-31 | 2004-09-22 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
| US20100133506A1 (en) * | 2007-06-15 | 2010-06-03 | Rohm Co., Ltd. | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor |
| JP4341702B2 (en) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device |
| CN102859723B (en) * | 2010-02-19 | 2015-09-09 | 夏普株式会社 | Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element |
| CN102751393A (en) * | 2011-04-20 | 2012-10-24 | 新世纪光电股份有限公司 | Light emitting diode structure |
| CN103137807A (en) * | 2013-02-22 | 2013-06-05 | 中国科学院半导体研究所 | Green ray light-emitting diode (LED) epitaxial structure with stress relief layer and production method thereof |
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2014
- 2014-01-13 CN CN201810015565.5A patent/CN107968139B/en not_active Expired - Fee Related
- 2014-01-13 CN CN201410014540.5A patent/CN104779328B/en not_active Expired - Fee Related
- 2014-01-13 CN CN201810016160.3A patent/CN108054255B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN108054255A (en) | 2018-05-18 |
| CN104779328B (en) | 2018-02-02 |
| CN104779328A (en) | 2015-07-15 |
| CN108054255B (en) | 2020-10-09 |
| CN107968139A (en) | 2018-04-27 |
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