CN108037789A - Reinforcing method of anti-radiation band gap reference circuit - Google Patents

Abstract

The present application provides a method for strengthening a radiation-resistant bandgap reference circuit, the method comprising: generating a first bandgap reference voltage, the first bandgap reference voltage being a bandgap reference voltage having a base leakage current variation component ; eliminate the base leakage current change component, and introduce the first triode emitter and base voltage difference; restore the first triode emitter and base voltage difference; The voltage difference between the emitter and the base generated by the triode is introduced into the bandgap generation circuit to generate a second bandgap reference voltage, wherein the second bandgap reference voltage is a bandgap that eliminates the variation component of the base leakage current The reference voltage. It solves the technical problem that the bandgap reference circuit realized in the standard process without special reinforcement design is still greatly affected by the total dose of radiation, and can be conveniently applied to various optimized device processes for further improvement Anti-radiation technical effect.

Description

A Reinforcement Method for Radiation-Resistant Bandgap Reference Circuit

technical field

The invention relates to the field of electronic technology, in particular to a method for strengthening a radiation-resistant bandgap reference circuit.

Background technique

In recent years, high-energy physics experimental circuits that work in radiation environments, in which radiation resistance reinforcement capabilities also play a vital role in the reliability of equipment.

Complementary metal-oxide-semiconductor (CMOS) technology has entered the nanometer era. ASIC circuits based on standard CMOS nanotechnology combined with some special design techniques have shown good anti-total dose and single-event lock-in characteristics.

However, in the process of realizing the technical solution of the invention in the embodiment of the present application, the inventor of the present application found that the above-mentioned technology has at least the following technical problems:

In the prior art, the bandgap reference circuit implemented on a standard process without special reinforcement design is still greatly affected by the total dose of radiation.

Contents of the invention

The embodiment of the present application provides a method for strengthening the radiation-resistant bandgap reference circuit, which solves the problem that the bandgap reference circuit implemented in the standard process without special reinforcement design is still greatly affected by the total dose of radiation in the prior art The problem is to achieve the technical effect of strengthening the bandgap reference circuit by weakening the influence of the base current and reducing the influence of the total dose of radiation.

In view of the above problems, the embodiments of the present application are proposed to provide a method for strengthening a radiation-resistant bandgap reference circuit.

An embodiment of the present application provides a method for strengthening a radiation-resistant bandgap reference circuit, which is applied to a complementary metal oxide semiconductor process. The method includes: generating a first bandgap reference voltage, the first bandgap reference voltage having The bandgap reference voltage of the base leakage current change component; eliminate the base leakage current change component, and introduce the first triode emitter and base voltage difference; restore the first triode emitter and base Pole voltage difference; introduce the voltage difference between the emitter and the base produced by the first triode into the bandgap generation circuit to generate the second bandgap reference voltage, wherein the second bandgap reference voltage is to eliminate Bandgap reference voltage for the base leakage current variation component.

Preferably, the eliminating the variation component of the base leakage current and introducing the voltage difference between the emitter and the base of the first triode specifically includes: obtaining a first circuit for generating the first The original circuit of the bandgap reference voltage; obtain a second circuit, the second circuit is a circuit that generates a first triode emitter and base voltage differential component, wherein the second circuit is located in the first circuit ; Eliminate the third circuit, the third circuit is a circuit that generates the base leakage current variation component, wherein the third circuit is located in the second circuit; obtain a fourth circuit, the fourth circuit is eliminated After the base leakage current change component is removed, the first triode emitter and base voltage difference component circuit; the fourth circuit is reintroduced into the first circuit.

Preferably, the method further includes: obtaining the first circuit by setting a first gain amplifier; obtaining the second circuit by setting a second gain amplifier.

Preferably, the method further includes: reintroducing the fourth circuit into the first circuit by setting a non-inverting amplifier.

Preferably, the bandwidths of the first gain amplifier and the second gain amplifier are respectively greater than or equal to the bandwidth index of the first circuit.

Preferably, the bandwidth of the non-inverting amplifier is greater than or equal to the bandwidth index of the first circuit.

One or more technical solutions provided in the embodiments of this application have at least the following technical effects or advantages:

A method for strengthening a radiation-resistant bandgap reference circuit provided in an embodiment of the present application is applied to a complementary metal oxide semiconductor process, and the method includes: generating a first bandgap reference voltage, the first bandgap reference voltage having The bandgap reference voltage of the base leakage current change component; eliminate the base leakage current change component, and introduce the first triode emitter and base voltage difference; restore the first triode emitter and base Pole voltage difference; introduce the voltage difference between the emitter and the base produced by the first triode into the bandgap generation circuit to generate the second bandgap reference voltage, wherein the second bandgap reference voltage is to eliminate Bandgap reference voltage for the base leakage current variation component. It solves the technical problem that the bandgap reference circuit realized in the standard process without special reinforcement design is still greatly affected by the total dose of radiation, and achieves the improvement of the bandgap reference voltage by weakening the influence of the base current The anti-radiation performance can be easily applied to various optimized device processes to further enhance the technical effect of anti-radiation.

The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the specific embodiments of the present invention are enumerated below.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings that need to be used in the embodiments or the description of the prior art. Obviously, the accompanying drawings in the following description are of the present application For some embodiments, those of ordinary skill in the art can also obtain other drawings based on these drawings without paying creative efforts.

FIG. 1 is a schematic flowchart of a method for strengthening a radiation-resistant bandgap reference circuit provided in an embodiment of the present application;

2 is a schematic flow diagram of eliminating the base leakage current variation component and introducing the first triode emitter-base voltage difference component provided by the embodiment of the present application;

FIG. 3 is a schematic diagram of the connection of the first circuit provided by the embodiment of the present application;

FIG. 4 is a schematic diagram of the connection of the fifth circuit provided by the embodiment of the present application;

FIG. 5 is a schematic diagram of waveforms of the first bandgap reference voltage and the second bandgap reference voltage provided by the embodiment of the present application.

Description of drawings: a first triode 1, a second circuit 2, a third circuit 3, a fourth circuit 4, a first gain amplifier 5, a second gain amplifier 6, and a non-inverting amplifier 7.

Detailed ways

A method for strengthening a radiation-resistant bandgap reference circuit provided in an embodiment of the present application. The method for strengthening a radiation-resistant bandgap reference circuit provided in an embodiment of the present application is applied to a complementary metal oxide semiconductor process. The method includes: Generate a first bandgap reference voltage, the first bandgap reference voltage is a bandgap reference voltage with a base leakage current variation component; eliminate the base leakage current variation component, and introduce the first triode emitter and Base voltage difference component; restore the voltage difference between the emitter and base of the first triode; introduce the voltage difference between the emitter and base generated by the first triode into the bandgap generation circuit to generate the first triode Two bandgap reference voltages, wherein the second bandgap reference voltage is a bandgap reference voltage that eliminates the variation component of the base leakage current. It solves the technical problem that the bandgap reference circuit realized in the standard process without special reinforcement design is still greatly affected by the total dose of radiation, and achieves the improvement of the bandgap reference voltage by weakening the influence of the base current The anti-radiation performance can be easily applied to various optimized device processes to further enhance the technical effect of anti-radiation.

Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

Embodiment one

FIG. 1 is a schematic flowchart of a method for strengthening a radiation-resistant bandgap reference circuit provided in an embodiment of the present application. As shown in Figure 1, applied to a complementary metal oxide semiconductor process, the method includes:

Step 110: Generate a first bandgap reference voltage, the first bandgap reference voltage is a bandgap reference voltage having a base leakage current variation component;

Specifically, complementary metal-oxide-semiconductor (CMOS) is a voltage-controlled amplifying device, which is the basic unit of CMOS digital integrated circuits. For circuit design, the total dose radiation will affect the conduction characteristics of the triode used in the conventional bandgap reference circuit, so the bandgap reference circuit is still greatly affected by the total dose radiation. In view of the fact that the PN junction induced by the total dose of radiation before causes an increase in the base leakage current of the overall PNP triode, a decrease in the current gain, and a change in the output voltage of the bandgap reference, so the embodiment of the present application achieves this by weakening the influence of the base current Circuit hardening for bandgap references. The first bandgap reference voltage is an original bandgap reference voltage, and the original bandgap reference voltage is a bandgap reference voltage having a base leakage current variation component.

The bandgap reference circuit is further explained. The bandgap reference circuit of the current mode is mainly through the current I R which is proportional to the absolute temperature (PTAT) and the current I _R which is inversely proportional to the absolute temperature (CTAT). _R2 is superimposed according to a certain ratio to generate a constant current _ID that does not change with temperature and power supply voltage, and then loads this reference current to the reference resistor to obtain a reference voltage that does not change with temperature and power supply voltage. As shown in Figure 3, assuming that M ₁ , M ₂ and M ₃ have the same size R ₁ =R ₂ , get I _DM1 =I _DM2 =I _DM3 , due to the negative feedback of the operational amplifier, V _X =V _Y , bipolar The tube emitter junction area Q ₂ is n times of Q ₁ , so the first bandgap reference voltage is obtained:

Among them, R _REF1 is R _REF , which is only used for comparing R _REF2 in Figure 4 below;

V _X and V _Y are the voltages at points X and Y in the corresponding circuit diagram;

V _REF1 is the classic bandgap reference output voltage;

V _EBQ1 is the voltage difference between the emitter and the base of Q ₁ triode;

V _EBQ2 is the voltage difference between the emitter and the base of Q ₂ triode;

N is the emitter area ratio of _Q2 and _Q1 transistor;

V _T is the thermal voltage commonly used in electricity;

I _DM3 is the drain current of _M3 .

Step 120: Eliminate the change component of the base leakage current, and introduce the voltage difference between the emitter and the base of the first triode, as shown in FIG. 2:

Specifically, considering the base leakage of the triode caused by the total dose radiation, the emitter-base leakage current ΔIB of the triode increases due to radiation, but because the number of triodes on the two branches is different, the value of the increase of the emitter current on the two branches is also the same. different. Assuming that the triode emitter current IC remains unchanged after radiation, the emitter-base voltage V _EB =V _T ×ln(IC/ISS) of the two branch transistors should also remain unchanged, but in fact due to the fact that the emitter The change of current I _R =(V _EBQ1 -V _EBQ2 )/R will affect V _EBQ2 , the number of triodes on the branch where M ₂ is located is n times that of the branch where M ₁ is located, so the leakage current on the branch where M ₂ is located will be obvious after radiation increases, causing I _R to rise and V _EBQ2 to decrease, but V _EBQ1 remains relatively unchanged, so I _CQ2 will decrease until a new equilibrium point is established. So there are:

V _REF0 is the output voltage of the bandgap reference before radiation (ideal value):

make:

△I _B,Q2 -△I _C,Q2 =n·△I _B

n· _ΔIB only represents the impact brought by n times I _B and does not represent the actual value.

I _R is the current flowing through R;

I _R2 is the current flowing on _R2 ;

V _REF1 here is the output voltage of the classical bandgap reference, that is, the output voltage of the first circuit;

I _{B, Q2} is the base current of Q ₂ triode;

I _{C, Q2} is Q ₂ transistor collector current;

ΔI _B,Q2 is the increase of the base current after Q ₂ triode radiation;

ΔI _C,Q2 is the amount of collector current increase after Q2 triode radiation.

It can be seen from the above formula that the relationship between the bandgap reference voltage after radiation and the bandgap reference voltage before radiation, due to the increase of the base leakage current of the first transistor, the ratio of the bandgap reference voltage after radiation to The bandgap reference voltage before radiation is high.

Step 121: Obtain a first circuit, the first circuit is an original circuit for generating the first bandgap reference voltage, and obtain the first circuit by setting a first gain amplifier 5;

Specifically, by setting the first gain amplifier 5 at the first circuit V _REF1 to isolate the first circuit, the first circuit is obtained, and the first circuit is a traditional current The bandgap reference circuit of the mode, without circuit reinforcement, is still greatly affected by the total dose of radiation.

Step 122: Obtain the second circuit 2, the second circuit 2 is a circuit that generates the voltage difference between the emitter and the base of the first triode 1, wherein the second circuit 2 is located in the first circuit Among them, the second circuit 2 is obtained by setting the second gain amplifier 6, and the bandwidths of the first gain amplifier 5 and the second gain amplifier 6 are respectively greater than or equal to the bandwidth index of the first circuit.

Specifically, the second circuit 2 is a circuit that generates the voltage difference between the emitter and the base of the first triode 1, wherein the second circuit 2 has a circuit that generates a base leakage current, so The second circuit 2 is a part of the first circuit, and the second circuit 2 is separated from the first circuit by setting the second circuit at V _{EB, Q2} of the second circuit 2 gain amplifier, and the bandwidths of the first gain amplifier 5 and the second gain amplifier 6 are respectively greater than or equal to the bandwidth index of the first circuit.

Step 123: Eliminate the third circuit 3, the third circuit 3 is a circuit that generates a base leakage current variation component, wherein the third circuit 3 is located in the second circuit;

Specifically, the third circuit 3 is the circuit part that generates the base leakage current variation component, the third circuit 3 belongs to a part of the second circuit 2, and the second circuit 2 needs to be The portion of the circuit that produces the varying component of the base leakage current is eliminated, thereby eliminating the influence of the base leakage current on the bandgap reference voltage.

The specific quantitative relationship is as follows:

Let: V _EB20 be the emitter-base voltage difference of the triode before irradiation;

V _REF0 is the output voltage (ideal value) of the bandgap reference before irradiation;

V _x1 is the potential of V _x1 in FIG. 4 .

make:

because:

V ₁ ＝V _EB2 ≈V _EB20 -n·△I _B ×R

V ₂ ＝V _REF1 ＝V _REF0 +R _REF1 ×n·△I _B

∴

∴

Step 124: Obtain a fourth circuit 4, which is a circuit for the voltage difference between the emitter and the base of the first triode 5 after eliminating the variation component of the base leakage current;

Step 125: Reintroduce the fourth circuit into the first circuit to form a fifth circuit, reintroduce the fourth circuit 4 into the first circuit by setting a non-inverting amplifier 7, and the bandwidth of the non-inverting amplifier is greater than or equal to A bandwidth index of the first circuit.

Specifically, the fourth circuit 4 is a circuit for eliminating the change component of the base leakage current, and the voltage difference between the emitter and the base of the first triode 5, and then the fourth circuit 4 Reintroducing the first circuit, that is, the overall circuit of the bandgap reference circuit that is resistant to the total dose effect, that is, the fifth circuit, passes between the fourth circuit and the first circuit, that is, V _X1 A non-inverting amplifier 7 is set between , V _x2 , so as to introduce the fourth circuit into the first circuit, thereby obtaining the fifth circuit.

Step 130: restore the voltage difference between the emitter and the base of the first triode;

Step 140: introduce the voltage difference between the emitter and the base generated by the first triode into a bandgap generating circuit to generate a second bandgap reference voltage, wherein the second bandgap reference voltage V _REF2 is Bandgap reference voltage for the base leakage current variation component.

Specifically, Fig. 3 re-introduces the newly generated V _EB that eliminates n·ΔI _B to generate the fifth circuit without n·ΔI _B , as shown in Fig. 3 , the triode in the fifth circuit adopts the same The connection and configuration of the triodes are exactly the same, and it is necessary to ensure that each triode is completely symmetrical.

The specific quantitative relationship is as follows:

because

Bring the output V _x2 in step 123 into

V _REF20 is an ideal bandgap reference voltage like V _REF10

Only the corresponding values of RREF2, R ₇ and R ₆ are different from R _REF1 , R and R ₂

In the fifth circuit, by configuring the values of R _REF2 , R ₇ , and R ₆ and the values of R _REF1 , R, and R ₂ , the bandgap reference voltage for the total dose of radiation resistance can be conveniently configured to achieve In order to improve the anti-radiation performance of the bandgap reference voltage by weakening the influence of the base current, it can be conveniently applied to various optimized device processes to further enhance the technical effect of anti-radiation.

Example 2

The present application provides a preferred embodiment of a method for strengthening a radiation-resistant bandgap reference circuit, as shown in FIG. 4 , which is the strengthened radiation-resistant bandgap reference circuit, that is, the fifth circuit.

Wherein, the first circuit generates the first bandgap reference voltage V _ref and the emitter-base voltage V _EBQ2 of the transistor Q ₂ , V _ref and V _EBQ2 are respectively connected to the positive input of the first gain amplifier 5 and the second gain amplifier 6 end; the output V1 and V2 of the first gain amplifier 5 and the second gain amplifier 6 are fed back to their negative input terminals respectively, and are connected with the positive input terminal of the non-inverting amplifier 7 through resistors _RA and R _B , and the non-inverting amplifier 7 outputs V _x2 And fed back to its negative input terminal through the resistor R; V _x2 is introduced into the first circuit to obtain the second bandgap reference voltage V _ref2 .

In this embodiment, the amplification factor of the first gain amplifier 5 and the second gain amplifier 6 under direct current is 1e6, the resistance value of _RA is 10k, the resistance value of _RB is 87k, and the resistance value of R is 10k. When this reference circuit is free from radiation, that is, when there is no current source connected between the emitter and the base of the transistor _Q2 , the second bandgap reference voltage V _ref2 and the first bandgap reference voltage V _ref are both ideal bandgap The reference voltage. When the circuit is subjected to total dose radiation, the emitter-base current of the triode will increase, that is, when there is a current source between the emitter and the base of the triode _Q2 , V _ref will be higher than the reference voltage before radiation, and V _ref2 Not affected by radiation.

Through simulation, we got the waveform shown in Figure 5. Among them, Fig. 5(b) is the simulation of the first circuit, wherein, the dotted line is the change trend of the voltage before radiation, and the solid line is the change trend of the voltage after radiation. It can be seen that when using the first circuit, due to the total dose The impact of radiation, the bandgap reference voltage before radiation and after radiation is very different; Fig. 5 (a) is the emulation of the circuit reinforced by this embodiment, in Fig. 5 (a), when using the fifth circuit , the waveforms of the second bandgap reference voltage V _ref2 before and after radiation coincide, indicating that the fifth circuit reinforced by the present application can eliminate the influence of radiation on the bandgap reference voltage. It can be seen from FIG. 5 that the fifth circuit described in this embodiment can well eliminate the influence of the base leakage current on the bandgap reference voltage, thereby achieving the effect of anti-radiation.

One or more technical solutions provided in the embodiments of this application have at least the following technical effects or advantages:

A method for strengthening a radiation-resistant bandgap reference circuit provided in an embodiment of the present application is applied to a complementary metal oxide semiconductor process, and the method includes: generating a first bandgap reference voltage, the first bandgap reference voltage having The bandgap reference voltage of the base leakage current change component; eliminate the base leakage current change component, and introduce the first triode emitter and base voltage difference; restore the first triode emitter and base Pole voltage difference; introduce the voltage difference between the emitter and the base produced by the first triode into the bandgap generation circuit to generate the second bandgap reference voltage, wherein the second bandgap reference voltage is to eliminate Bandgap reference voltage for the base leakage current variation component. It solves the technical problem that the bandgap reference circuit realized in the standard process without special reinforcement design is still greatly affected by the total dose of radiation, and achieves the improvement of the bandgap reference voltage by weakening the influence of the base current The anti-radiation performance can be easily applied to various optimized device processes to further enhance the technical effect of anti-radiation.

While preferred embodiments of the invention have been described, additional changes and modifications to these embodiments can be made by those skilled in the art once the basic inventive concept is appreciated. Therefore, it is intended that the appended claims be construed to cover the preferred embodiment as well as all changes and modifications which fall within the scope of the invention.

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.

Finally, it should be noted that the above specific embodiments are only used to illustrate the technical solutions of the present invention without limitation, although the present invention has been described in detail with reference to examples, those of ordinary skill in the art should understand that the technical solutions of the present invention can be carried out Modifications or equivalent replacements without departing from the spirit and scope of the technical solution of the present invention shall be covered by the claims of the present invention.

Claims (6)

1. A method for strengthening a radiation-resistant bandgap reference circuit, applied to a complementary metal-oxide-semiconductor process, said method comprising: generating a first bandgap reference voltage, the first bandgap reference voltage being a bandgap reference voltage having a base leakage current variation component; eliminating the variation component of the base leakage current, and introducing a voltage difference component between the emitter and the base of the first triode; restoring the voltage difference between the emitter and the base of the first triode; introducing the voltage difference between the emitter and the base generated by the first triode into a bandgap generation circuit to generate a second bandgap reference voltage, wherein the second bandgap reference voltage is to eliminate the base leakage current Bandgap reference voltage for varying components. 2. The method according to claim 1, wherein the eliminating the base leakage current variation component and introducing the first triode emitter and base voltage difference component specifically comprises: obtaining a first circuit, the first circuit being an original circuit for generating the first bandgap reference voltage; Obtaining a second circuit, the second circuit is a circuit for generating a voltage difference between the emitter and the base of the first triode, wherein the second circuit is located in the first circuit; eliminating a third circuit, the third circuit being a circuit that generates a base leakage current variation component, wherein the third circuit is located in the second circuit; Obtaining a fourth circuit, the fourth circuit is a circuit for eliminating the difference component of the emitter and base voltage of the first triode after eliminating the variation component of the base leakage current; The fourth circuit is reintroduced into the first circuit to form a fifth circuit. 3. The method of claim 2, further comprising: obtaining the first circuit by setting a first gain amplifier; The second circuit is obtained by setting a second gain amplifier. 4. The method of claim 2, further comprising: The fourth circuit is reintroduced into the first circuit by providing a non-inverting amplifier. 5. The method according to claim 3, wherein the bandwidths of the first gain amplifier and the second gain amplifier are respectively greater than or equal to the bandwidth index of the first circuit. 6. The method according to claim 4, wherein the bandwidth of the non-inverting amplifier is greater than or equal to the bandwidth index of the first circuit.