CN108063085B - Process treatment method for improving yield of long-term storage semiconductor silicon wafer products - Google Patents
Process treatment method for improving yield of long-term storage semiconductor silicon wafer products Download PDFInfo
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- CN108063085B CN108063085B CN201711231340.5A CN201711231340A CN108063085B CN 108063085 B CN108063085 B CN 108063085B CN 201711231340 A CN201711231340 A CN 201711231340A CN 108063085 B CN108063085 B CN 108063085B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 90
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 75
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 75
- 239000010703 silicon Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title claims abstract description 54
- 230000008569 process Effects 0.000 title claims abstract description 20
- 230000007774 longterm Effects 0.000 title claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 26
- 238000005507 spraying Methods 0.000 claims abstract description 23
- 238000001035 drying Methods 0.000 claims abstract description 19
- 238000002791 soaking Methods 0.000 claims abstract description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000008367 deionised water Substances 0.000 claims abstract description 14
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 14
- 238000011010 flushing procedure Methods 0.000 claims abstract description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 5
- 235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 5
- 239000011259 mixed solution Substances 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 claims description 68
- 239000007788 liquid Substances 0.000 claims description 17
- 238000004140 cleaning Methods 0.000 claims description 13
- 238000009835 boiling Methods 0.000 claims description 7
- 239000000243 solution Substances 0.000 claims description 5
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 239000007921 spray Substances 0.000 claims 5
- 229940095676 wafer product Drugs 0.000 claims 1
- 239000002245 particle Substances 0.000 abstract description 11
- 230000007423 decrease Effects 0.000 abstract 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 229910001868 water Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
本发明公开了一种提升长期存储半导体硅片产品良率的工艺处理方法，它包括步骤1、喷淋及浸泡：将存储后的半导体硅片进行喷淋及浸泡；步骤2、煮一号液：使用氨水、双氧水和去离子水的混合溶液对浸泡后的半导体硅片进行清洗；步骤3、冲水：对步骤2后的半导体硅片进行冲洗；步骤4、甩干：对冲洗后的半导体硅片进行进行甩干；步骤5、烘培：对甩干后的半导体硅片进行烘干处理；解决了现有技术存在的存储运输后的半导体器件硅片因存储和运输过程中的水汽、颗粒、应力等造成的电参数变化、产品良率下降问题。
The invention discloses a process treatment method for improving the yield of long-term storage semiconductor silicon wafer products, which comprises step 1, spraying and soaking: spraying and soaking the stored semiconductor silicon wafer; : use the mixed solution of ammonia water, hydrogen peroxide and deionized water to clean the soaked semiconductor wafer; step 3, flushing: rinse the semiconductor wafer after step 2; step 4, spin dry: rinse the semiconductor wafer The silicon wafer is dried; step 5, baking: drying the dried semiconductor wafer; it solves the problem that the storage and transportation of the semiconductor device silicon wafer in the prior art is caused by water vapor, Changes in electrical parameters caused by particles, stress, etc., and the decline in product yield.
Description
Technical Field
The invention belongs to the field of semiconductor integrated circuits and devices, and particularly relates to a process treatment method for improving the yield of long-term storage semiconductor silicon wafer products.
Background
Semiconductor devices (integrated circuits and discrete devices) are devices formed on a silicon wafer using basic semiconductor processing methods such as oxidation, photolithography, etching, doping, annealing, deposition, etc., having certain longitudinal and lateral structures, and due to differences in structure and semiconductor processing details, the functions reflected under an applied bias voltage are different. The semiconductor silicon wafer is used as a carrier of a semiconductor device, the semiconductor silicon wafer needs to be stored after a semiconductor process is finished, and due to the fact that storage temperature, protective gas, storage time, device environment sensitivity and the like are different, after the semiconductor device is stored for a period of time, electrical parameters of the device can be changed to different degrees, even the electrical parameters of the device are unqualified, the yield is reduced, and the whole silicon wafer is scrapped when the electrical parameters are serious. The change is mainly caused by factors such as water vapor, particles, stress and the like, wherein the water vapor mainly causes the exceeding of leakage current parameters of the device, the particles mainly cause the appearance problem, and the stress may cause the exceeding of all electrical parameters or the functional failure. The current general storage method is to store by adopting a storage cabinet, and the storage cabinet is filled with inert gas (such as nitrogen) for protection, the environmental temperature is controlled at 23 +/-3 ℃, the humidity is less than or equal to 35 percent, and the storage cabinet is packaged by using vacuum bags in transportation. Nevertheless, the semiconductor device is discarded due to the fact that the storage time is too long, particles happen to the semiconductor silicon wafer isolation paper, transportation vibration and the like can still cause the electrical parameters of the semiconductor device to exceed the standard or have apparent problems.
Therefore, the problems of electric parameter change and product yield reduction caused by water vapor, particles, stress and the like exist after the semiconductor device silicon wafer is stored and transported.
The invention content is as follows:
the technical problems to be solved by the invention are as follows: the technical treatment method for improving the yield of semiconductor silicon wafer products stored for a long time is provided, and the problems of electric parameter change and product yield reduction caused by water vapor, particles, stress and the like in the storage and transportation processes of semiconductor device silicon wafers after storage and transportation in the prior art are solved.
The technical scheme of the invention is as follows:
a process treatment method for improving yield of long-term storage semiconductor silicon wafer products comprises the following steps:
step 1, spraying and soaking: spraying and soaking the stored semiconductor silicon wafer;
step 2, boiling the first liquid: cleaning the soaked semiconductor silicon wafer by using a mixed solution of ammonia water, hydrogen peroxide and deionized water;
step 3, flushing: washing the semiconductor silicon wafer after the step 2;
step 4, spin-drying: spin-drying the washed semiconductor silicon wafer;
step 5, baking: and drying the spun semiconductor silicon wafer.
The spraying and soaking method in the step 1 comprises the following steps: spraying the semiconductor silicon wafer by using a cleaning tank with a spraying function until the semiconductor silicon wafer is completely submerged by spraying liquid, wherein the spraying liquid is deionized water; soaking is to soak the semiconductor silicon wafer in a cleaning tank by using deionized water, and the soaking time is 5 minutes.
The method for boiling the first liquid in the step 2 comprises the following steps: using ammonia (NH)4OH), hydrogen peroxide (H)2O2) And deionized water (H)2O) to form a first solution to clean the semiconductor silicon wafer; the first liquid comprises the following components in percentage by weight: NH (NH)4OH：H2O2：H2O=1：1：6。
The flushing method in the step 3 comprises the following steps: and cleaning the semiconductor silicon wafer 10 times by using a cleaning tank with a spraying function.
The spin-drying method in the step 4 comprises the following steps: and (5) drying the semiconductor silicon wafer by using a drying machine.
The baking method in the step 5 comprises the following steps: and baking the semiconductor silicon wafer for 30 minutes by using a high-temperature oven at 120 ℃.
The semiconductor silicon chip is not thinned and has been subjected to metallization wiring and passivation processes.
The invention has the beneficial effects that:
the process treatment method for improving the yield of the semiconductor silicon chip products stored for a long time comprises five process steps of spraying and soaking, boiling the first liquid, flushing, spin-drying and baking, and the adopted equipment is conventional equipment without adding additional semiconductor equipment, so that the method has the advantages of low cost and simplicity in implementation.
The spraying and soaking process steps can fully wet the surface of the semiconductor silicon wafer and reduce the adhesive force of particles on the surface of the semiconductor silicon wafer; the process step of boiling the first liquid can well remove particles on the surface of the semiconductor silicon wafer; the flushing process step can remove the components of the first liquid on the surface of the semiconductor silicon wafer; the spin-drying process can remove moisture on the surface of the semiconductor silicon wafer; the baking process step can further remove water vapor on the surface of the semiconductor silicon wafer and reduce the stress of the semiconductor silicon wafer; therefore, the method can effectively reduce the water vapor, particles and stress on the surface of the semiconductor silicon wafer, thereby solving the problem of yield reduction of the semiconductor silicon wafer caused by the factors such as the water vapor, the particles and the stress generated in the storage and transportation processes, and maintaining the high yield of the qualified semiconductor silicon wafer; the problems of electric parameter change and product yield reduction caused by water vapor, particles, stress and the like in the storage and transportation processes of the semiconductor device silicon wafer after storage and transportation in the prior art are solved.
Description of the drawings:
FIG. 1 is a schematic flow chart of the present invention.
The specific implementation mode is as follows:
a process treatment method for improving yield of long-term storage semiconductor silicon wafer products comprises the following steps:
step 1, spraying and soaking: spraying and soaking the stored semiconductor silicon wafer; the spraying and soaking method in the step 1 comprises the following steps: spraying the semiconductor silicon wafer by using a cleaning tank with a spraying function until the semiconductor silicon wafer is completely submerged by spraying liquid, wherein the spraying liquid is deionized water; soaking is to soak the semiconductor silicon wafer in a cleaning tank by using deionized water, and the soaking time is 5 minutes. So that the semiconductor silicon wafer is fully wet.
Step 2, boiling the first liquid: cleaning the soaked semiconductor silicon wafer by using a mixed solution of ammonia water, hydrogen peroxide and deionized water; the method for boiling the first liquid in the step 2 comprises the following steps: using ammonia (NH)4OH), hydrogen peroxide (H)2O2) And deionized water (H)2O) to form a first solution to clean the semiconductor silicon wafer; the first liquid comprises the following components in percentage by weight: NH (NH)4OH：H2O2：H2O=1：1：6。
Step 3, flushing: washing the semiconductor silicon wafer after the step 2; the flushing method in the step 3 comprises the following steps: and cleaning the semiconductor silicon wafer 10 times by using a cleaning tank with a spraying function. Used for removing the first liquid component on the surface of the semiconductor silicon chip.
Step 4, spin-drying: spin-drying the washed semiconductor silicon wafer; and removing the deionized water on the surface of the semiconductor silicon wafer.
The spin-drying method in the step 4 comprises the following steps: and (5) drying the semiconductor silicon wafer by using a drying machine.
Step 5, baking: and drying the spun semiconductor silicon wafer.
The baking method in the step 5 comprises the following steps: and baking the semiconductor silicon wafer for 30 minutes by using a high-temperature oven at 120 ℃. The method is used for removing water on the surface of the semiconductor silicon wafer and reducing stress.
The semiconductor silicon chip is not thinned and has been subjected to metallization wiring and passivation processes.
Thus, the process treatment for improving the yield of the semiconductor silicon chip product with long-term storage is completed.
Claims (5)
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| CN201711231340.5A CN108063085B (en) | 2017-11-29 | 2017-11-29 | Process treatment method for improving yield of long-term storage semiconductor silicon wafer products |
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| CN201711231340.5A CN108063085B (en) | 2017-11-29 | 2017-11-29 | Process treatment method for improving yield of long-term storage semiconductor silicon wafer products |
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| CN108063085B true CN108063085B (en) | 2020-06-02 |
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| CN109604244A (en) * | 2018-11-27 | 2019-04-12 | 上海申和热磁电子有限公司 | A kind of cleaning method of suitable ultra thin silicon wafers |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101099229A (en) * | 2004-12-23 | 2008-01-02 | 兰姆研究公司 | Cleaning methods for silicon electrode assembly surface contamination removal |
| CN102738062A (en) * | 2011-04-01 | 2012-10-17 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN102828239A (en) * | 2012-08-24 | 2012-12-19 | 东莞市中镓半导体科技有限公司 | Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology |
| CN106356283A (en) * | 2015-07-17 | 2017-01-25 | 台湾积体电路制造股份有限公司 | Multi-cycle wafer cleaning method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101099229A (en) * | 2004-12-23 | 2008-01-02 | 兰姆研究公司 | Cleaning methods for silicon electrode assembly surface contamination removal |
| CN102738062A (en) * | 2011-04-01 | 2012-10-17 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
| CN102828239A (en) * | 2012-08-24 | 2012-12-19 | 东莞市中镓半导体科技有限公司 | Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology |
| CN106356283A (en) * | 2015-07-17 | 2017-01-25 | 台湾积体电路制造股份有限公司 | Multi-cycle wafer cleaning method |
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