CN108242504A - A kind of pruning method of magnetic tunnel junction and preparation method thereof - Google Patents
A kind of pruning method of magnetic tunnel junction and preparation method thereof Download PDFInfo
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- CN108242504A CN108242504A CN201611229907.0A CN201611229907A CN108242504A CN 108242504 A CN108242504 A CN 108242504A CN 201611229907 A CN201611229907 A CN 201611229907A CN 108242504 A CN108242504 A CN 108242504A
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- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title abstract description 4
- 238000013138 pruning Methods 0.000 title description 3
- 238000005530 etching Methods 0.000 claims abstract description 42
- 230000006378 damage Effects 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 238000001020 plasma etching Methods 0.000 claims description 15
- 238000009966 trimming Methods 0.000 claims description 11
- 238000010884 ion-beam technique Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
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- 238000000137 annealing Methods 0.000 claims description 3
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
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- Manufacturing & Machinery (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Abstract
The present invention provides a kind of method trimmed using complex ion implanting and etching flow to the magnetic tunnel junction after etching and corresponding preparation methods, it is related to magnetic RAM manufacturing technology field, by to the magnetic tunnel junction after etched, carrying out CO, NO, PF3Complexes ion implanting is waited, makes damage/sedimentary and the magnetic tunnel junction closed on SI semi-insulation/complex reaction activation, then, is removed by etching technics by the region of complex ion implanting.The damage that is covered in side wall and again sedimentary have thoroughly been removed, has been very beneficial for magnetic RAM magnetics, the promotion of electric property and the improvement of yield.
Description
Technical field
The present invention relates to magnetic RAM (MRAM, Magnetic Radom Access Memory) manufacturing technology necks
Domain more particularly to a kind of pruning method of magnetic tunnel junction (MTJ, Magnetic Tunnel Junction), specially use
The method that complex ion implanting trims the magnetic tunnel junction after etching with etching flow.
Background technology
In recent years, using the magnetic RAM of magnetic tunnel junction (MTJ) by it is believed that being that following solid-state is non-easily
The property lost memory body, it has the characteristics that high-speed read-write, large capacity and low energy consumption.Ferromagnetism MTJ is usually sandwich structure,
In be magnetic memory layer, it can change the direction of magnetization to record different data；Positioned at the tunnel barrier layer of intermediate insulation；
Magnetic reference layer, positioned at the opposite side of tunnel barrier layer, its direction of magnetization is constant.
For information can be recorded in this magnetoresistive element, it is proposed that using based on spin momentum transfer or spin-transfer torque
The write method of (STT, Spin Transfer Torque) switch technology, such MRAM are known as STT-MRAM.According to magnetic polarization
The difference in direction, STT-MRAM are divided into as STT-MRAM in face and vertical STT-MRAM (i.e. pSTT-MRAM), and the latter has preferably
Performance.Method according to this, you can by providing spin polarized current to magnetoresistive element come the intensity of magnetization of inverting magnetization memory layer
Direction.In addition, the reduction of the volume with Magnetic memory layer, write or spin polarized current that conversion operation need to be injected is also smaller.
Therefore, this write method can be achieved at the same time device miniaturization and reduce electric current.
Meanwhile in view of switching electric current required when reducing MTJ element size can also reduce, so the pSTT- in terms of scale
MRAM can be very good mutually to agree with state-of-the-art technology node.Therefore, it is desirable to it is that pSTT-MRAM elements are made into minimum ruler
It is very little, and with extraordinary uniformity and the influence to MTJ magnetism is minimized, used preparation method can also be real
Show high good and the bad rate, pinpoint accuracy, high reliability, low energy consumption and remain adapted to the temperature coefficient that data well preserve.Meanwhile
Write operation is changed based on resistance state in nonvolatile memory, so as to need control thus caused to mtj memory device lifetime
Destruction and shortening.However, the fluctuation of MTJ resistance may be increased by preparing a small-sized MTJ element so that pSTT-MRAM's
Larger fluctuation can also be had therewith by writing voltage or electric current, can damage the performance of MRAM in this way.
In present MRAM manufacturing process, two kinds of etching technics of generally use to carry out magnetic tunnel junction it is miniature, the
One kind is ion beam etching (IBE, Ion Beam Etching), and second is reactive ion etching (RIE, Reactive Ion
Etching).In IBE etching processes, generally using Ar+Deng as ion source, since physical sputtering will generate physical damnification
With the deposition again for causing the material that is etched；In RIE etching processes, generally using CF4、SF6、NF3、Cl2、BCl3、CH3OH or
CO/NH3Deng the main etching gas of conduct, since the introducing of chemically active gas will generate chemical damage, simultaneously as carving
Erosion by-product is difficult to volatilization and also caused will again deposit, in general, after magnetic tunnel junction etching, side wall can form one layer
Damaging layer/sedimentary, this will influence the magnetism and electric property of magnetic tunnel junction, and What is more, it will directly results in from ginseng
Short circuit of the layer to memory layer is examined, so as to be unfavorable for the raising of magnetic storage yield.Therefore, those skilled in the art is dedicated to
A kind of method for the damage/sedimentary for effectively removing and being covered in side wall is developed, improves magnetics, the electrical property of magnetic RAM
Can, and improve its yield.
Therefore, those skilled in the art is dedicated to developing a kind of damage/sedimentary for effectively removing and being covered in side wall
Method, improves magnetics, the electric property of magnetic RAM, and improves its yield.
Invention content
The present invention provides a kind of method for trimming magnetic tunnel junction, which is characterized in that the magnetic tunnel after being etched to define
Road knot first using complex ion implanting, then performs etching, to remove the damaging layer of the magnetic tunnel junction outer wall and/or sink
Lamination.
Further, the complex ion implanting uses ion implantation apparatus, ion beam etching device or reactive ion
Etching device is realized.
Further, after the complex ion implanting, thermal annealing is first carried out, then perform etching.
Further, the complex ion implanting sphere of action at least makes the damage/sedimentary and the magnetic closed on
Property tunnel knot part is by insulating and/or complex reaction.
Further, the etching after the complex ion implanting is using reactive ion etching.
Further, the reactive ion etching uses O2、O3、N2、H2、NH3、NF3、CF6、CF4, in He, Ne or Ar
One or several kinds are used as reaction gas.
Further, the reactive ion etching is etched using a step or multistep.
A kind of method for preparing magnetic tunnel junction is also disclosed in the present invention, includes the following steps：
Form magnetic tunnel junction multilayer film and mask layer；
Pattern the mask layer；
Etch the magnetic tunnel junction multilayer film；
Magnetic tunnel junction is trimmed using the above method.
Further, it is further comprising the steps of after completing to the trimming of the magnetic tunnel junction：
Deposit dielectrics；
Polishing polishes the dielectric.
Further, the dielectric is less than or equal to 3.9 dielectric for dielectric constant.
Technique effect
It is provided by the invention it is a kind of using complex ion implanting with etching flow to the magnetic tunnel junction after etching into
The technique of row trimming has thoroughly removed the damage for being covered in side wall and sedimentary, while again effective using multistep lithographic method
Magnetic tunnel junction is protected, is very beneficial for magnetic RAM magnetics, the promotion of electric property and the improvement of yield.
The technique effect of the design of the present invention, concrete structure and generation is described further below with reference to attached drawing, with
It is fully understood from the purpose of the present invention, feature and effect.
Description of the drawings
Fig. 1 is to the magnetic tunnel junction side wall after etching according to a kind of complex ion injection of the present invention with etching flow
The flow chart for the technique trimmed；
Fig. 2 is to provide the hearth electrode substrate of CMP planarization in the preferred embodiment of the present invention, and shape successively on it
Schematic diagram into after magnetic tunnel junction multilayer film and hard mask film layer；
Fig. 3 is the schematic diagram after being performed etching to magnetic tunnel junction in the preferred embodiment of the present invention；
Fig. 4 is the signal for carrying out complex ion implanting in the preferred embodiment of the present invention to magnetic tunnel junction
Figure；
Fig. 5 is in the preferred embodiment of the present invention, after being performed etching using etching technics to ion implanting section
Schematic diagram；
Fig. 6 is deposit dielectrics in the preferred embodiment of the present invention, and it is chemically-mechanicapolish polished until hard
Schematic diagram after at the top of mask；
Shown in figure：210- hearth electrodes, 220- magnetic tunnel junction multilayer films, 230- hard mask film layers, 240- sidewall damages/
Sedimentary, 250- complex ion implanted regions, 260- dielectrics.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.It should be noted that attached drawing of the present invention uses using the form of simplification and non-essence
Accurate ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
It is provided by the invention it is a kind of using complex ion implanting with etching flow to the magnetic tunnel junction side after etching
The technique that wall is trimmed, first, by the magnetic tunnel junction after etched, carrying out CO, NO or PF3Wait complexes ion note
Enter, make damage/sedimentary and the magnetic tunnel junction closed on SI semi-insulation/complex reaction activation, then, pass through etching technics
Remove by the region of complex ion implanting.The damage that is covered in side wall and again sedimentary have thoroughly been removed, has been very beneficial for
Magnetic RAM magnetics, the promotion of electric property and the improvement of yield.Its forming step is as follows, as shown in Figure 1：
Step 1：Hearth electrode substrate 210, and deposited magnetic tunnel knot multilayer film 220 and hard mask film in substrate are provided
Layer 230, as shown in Figure 2；
Wherein, the overall thickness of magnetic tunnel junction (MTJ) multilayer film 220 is 15nm~40nm, can be by reference layer, potential barrier
The Bottom Pinned structures being superimposed upwards successively of layer and memory layer either by memory layer, barrier layer and reference layer according to
The secondary Top Pinned structures being superimposed upwards.
Reference layer has magnetic polarization invariance, is face inner mold (iSTT-MRAM) or vertical (pSTT-MRAM) structure according to it
It is different.The reference layer of face inner mold (iSTT-MRAM) generally has (IrMn or PtMn)/CoFe/Ru/CoFe structures, excellent
It is 10~30nm to select overall thickness；The reference layer of vertical-type (pSTT-MRAM) generally has TbCoFe or [Co/Pt]nCo/Ru/
[CoPt]mSuperlattice multilayer film structure, preferred overall thickness are 8~20nm.
Barrier layer is nonmagnetic metal oxide, preferably MgO or Al2O3, thickness is 0.5nm~3nm.
Remember layer have variable magnetic polarize, according to its be face inner mold (iSTT-MRAM) or vertically (pSTT-MRAM) structure again
Institute is different.The memory layer of face inner mold iSTT-MRAM is generally CoFe/CoFeB or CoFe/NiFe, preferred thickness for 2nm~
6nm, vertical-type pSTT-MRAM memory layer be generally CoFeB, CoFe/CoFeB, Fe/CoFeB, CoFeB (Ta, W, Mo)/
CoFeB, preferred thickness are 0.8nm~2nm.
The thickness of hard mask layer 230 is 20nm~100nm, selects Ta, TaN, W or WN etc. to be obtained in halogen plasma-based
It is more preferable to carve profile.
Step 2：220 pattern of graphic definition magnetic tunnel junction etches magnetic tunnel junction 220, as shown in Figure 3；More into one
Step ground, this step can be divided into the following steps：
(1) 220 pattern of graphic definition magnetic tunnel junction, and pattern is shifted to the top of magnetic tunnel junction 220；It crosses herein
Cheng Zhong, using a photoetching once etch (LE, lithography-etching) or Twi-lithography twice etching (LELE,
Lithography-etching-lithography-etching method) is completed the definition to magnetic tunnel junction 220 and is covered firmly
Reactive ion (RIE) etching of mold layer 230, and remaining polymer is removed using RIE techniques simultaneously, so that pattern is transferred to magnetic
The top of property tunnel knot 220.
(2) magnetic tunnel junction 220 is performed etching；
Wherein, etching technics may be used reactive ion etching (RIE, Reactive Ion Etching) and/or from
Beamlet etches (IBE, Ion Beam Etching).IBE is mainly used as ion source using Ar, Kr or Xe etc.；RIE is mainly used
CH3OH, CH4/ Ar, C2H5OH, CH3OH/Ar or CO/NH3Deng as main etching gas；And use emission spectrometer (OES,
Optical Emission Spectroscopy) or ion microprobe (SIMS, Second Ion Mass
Spectroscopy) judge etching terminal signal.
Step 3：Complex ion implanting forms ion implanting section 250, as shown in Figure 4；
CO, NO or PF3Ion placement machine technology (IIT, Ion Implantation may be used in ion implantation apparatus
), Technology ion beam etching technology (IBE, Ion Beam Etching) or reactive ion etching technology (RIE,
Reactive Ion Etching) etc. techniques realize.Accurate control ion implantation dosage and Implantation Energy, so that damage/heavy
Lamination 240 and part magnetic tunnel junction are activated by insulating/complex reaction；In CO, NO or PF3Complex ion injection end
Afterwards, vacuum annealing is carried out, so that insulating is more abundant.
Step 4：Reactive ion etching removes ion implanting section 250, as shown in Figure 5；
Reactive ion gas is selected from O2、O3、N2、H2、NH3、NF3、CF6、CF4, one or several kinds in He, Ne or Ar, and
Multi-step etching is segmented into remove ion implanting section 250 completely, meanwhile, damage additionally is not generated to magnetic tunnel junction
Wound.
Step 5：Deposit dielectrics 260, chemical polishing polish dielectric until the top of hard mask 230, as shown in Figure 6；
Wherein, dielectric 260 is SiO2Or low-k (low-k) dielectric, such as HSQ, MSQ or SiOCH etc..
Low-k (low-k) dielectric refers to material of the dielectric constant (k) less than silica (k=3.9), is having
When body is implemented, low-k materials can be hydrogeneous silicate (Hydrogen Silsequioxane, HSQ, k=2.8~3.0), contain
There is Si-CH3The salt containing methane-siliconic acid (Methylsilsesquioxane, MSQ, k=2.5~2.7) of functional group, synthesis are hydrogeneous
Hybrid organic siloxane polymer (Hybrid Organic synthesized by the silicates HSQ and MSQ of salt containing methane-siliconic acid
Siloxane Polymer, HOSP) film (k=2.5), porous SiOCH films (k=2.3~2.7), it might even be possible to using super
Low-k (k<2.0) the organics high-molecular compounds such as porosity silicate (Porous Silicate) and dielectric are normal
Number (k) is 1.9 porous SiOCH films.
The preferred embodiment of the present invention described in detail above.It should be appreciated that those of ordinary skill in the art without
Creative work is needed according to the present invention can to conceive and makes many modifications and variations.Therefore, all technologies in the art
Personnel are available by logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Technical solution, all should be in the protection domain being defined in the patent claims.
Claims (10)
- A kind of 1. method for trimming magnetic tunnel junction, which is characterized in that the magnetic tunnel junction after being etched to define, first using network Base ion implanting is closed, then is performed etching, to remove the damaging layer and/or sedimentary of the magnetic tunnel junction outer wall.
- 2. the method for trimming magnetic tunnel junction as claimed in claim 1, which is characterized in that the complex ion implanting uses ion Injection device, ion beam etching device or reactive ion etching device are realized.
- 3. the method for trimming magnetic tunnel junction as claimed in claim 1, which is characterized in that after the complex ion implanting, Thermal annealing is first carried out, then is performed etching.
- 4. the method for trimming magnetic tunnel junction as claimed in claim 1, which is characterized in that the complex ion implanting sphere of action At least make the damage/sedimentary and the magnetic tunnel junction part closed on by insulating and/or complex reaction.
- 5. the method for magnetic tunnel junction is prepared as claimed in claim 1, which is characterized in that the etching after the complex ion implanting It is using reactive ion etching.
- 6. the method for trimming magnetic tunnel junction as claimed in claim 5, which is characterized in that the reactive ion etching uses O2、O3、 N2、H2、NH3、NF3、CF6、CF4, one or several kinds in He, Ne or Ar are as reaction gas.
- 7. the method for trimming magnetic tunnel junction as claimed in claim 5, which is characterized in that the reactive ion etching using a step or Person's multistep etches.
- 8. a kind of method for preparing magnetic tunnel junction, includes the following steps：Form magnetic tunnel junction multilayer film and mask layer；Pattern the mask layer；Etch the magnetic tunnel junction multilayer film；Magnetic tunnel junction is trimmed using method as claimed in claim 1.
- 9. preparing the method for magnetic tunnel junction as claimed in claim 8, after completing to the trimming of the magnetic tunnel junction, also wrap Include following steps：Deposit dielectrics；Polishing polishes the dielectric.
- 10. the method for trimming magnetic tunnel junction as claimed in claim 9, which is characterized in that the dielectric is less than for dielectric constant Dielectric equal to 3.9.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023019804A1 (en) * | 2021-08-20 | 2023-02-23 | 江苏鲁汶仪器有限公司 | Method for reducing damage to magnetic tunnel junction of mram |
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| CN105609628A (en) * | 2014-12-05 | 2016-05-25 | 上海磁宇信息科技有限公司 | Method for making a magnetic random access memory element with small dimension and high qulity |
| CN106159081A (en) * | 2015-05-15 | 2016-11-23 | 三星电子株式会社 | Form the method for pattern, magnetic memory device and manufacture method thereof |
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| WO2023019804A1 (en) * | 2021-08-20 | 2023-02-23 | 江苏鲁汶仪器有限公司 | Method for reducing damage to magnetic tunnel junction of mram |
| CN115715141A (en) * | 2021-08-20 | 2023-02-24 | 江苏鲁汶仪器股份有限公司 | Method for reducing damage of MRAM magnetic tunnel junction |
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