CN108315725A - A kind of minimizing technology of the impurity on silver bonding wire surface - Google Patents
A kind of minimizing technology of the impurity on silver bonding wire surface Download PDFInfo
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- CN108315725A CN108315725A CN201810027755.9A CN201810027755A CN108315725A CN 108315725 A CN108315725 A CN 108315725A CN 201810027755 A CN201810027755 A CN 201810027755A CN 108315725 A CN108315725 A CN 108315725A
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- silver
- bonding wire
- wire surface
- minimizing technology
- surface impurity
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- 239000012535 impurity Substances 0.000 title claims abstract description 25
- 238000005516 engineering process Methods 0.000 title claims abstract description 21
- 229910052709 silver Inorganic materials 0.000 title claims description 38
- 239000004332 silver Substances 0.000 title claims description 38
- 238000000034 method Methods 0.000 claims abstract description 29
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910001316 Ag alloy Inorganic materials 0.000 claims abstract description 26
- 238000006073 displacement reaction Methods 0.000 claims abstract description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000243 solution Substances 0.000 claims description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- 239000008367 deionised water Substances 0.000 claims description 23
- 229910021641 deionized water Inorganic materials 0.000 claims description 23
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 239000002904 solvent Substances 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 claims description 7
- 238000001035 drying Methods 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 6
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 6
- 239000012266 salt solution Substances 0.000 claims description 6
- 238000005253 cladding Methods 0.000 claims description 5
- 238000005202 decontamination Methods 0.000 claims description 5
- 230000003588 decontaminative effect Effects 0.000 claims description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229940116901 diethyldithiocarbamate Drugs 0.000 claims description 4
- LMBWSYZSUOEYSN-UHFFFAOYSA-N diethyldithiocarbamic acid Chemical compound CCN(CC)C(S)=S LMBWSYZSUOEYSN-UHFFFAOYSA-N 0.000 claims description 4
- WQABCVAJNWAXTE-UHFFFAOYSA-N dimercaprol Chemical compound OCC(S)CS WQABCVAJNWAXTE-UHFFFAOYSA-N 0.000 claims description 4
- 150000003583 thiosemicarbazides Chemical class 0.000 claims description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 230000000536 complexating effect Effects 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M Thiocyanate anion Chemical compound [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 claims description 2
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 229960001051 dimercaprol Drugs 0.000 claims description 2
- 235000019441 ethanol Nutrition 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 238000006386 neutralization reaction Methods 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 claims description 2
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 claims description 2
- 235000019345 sodium thiosulphate Nutrition 0.000 claims description 2
- -1 thiosulfuric acid compound Chemical class 0.000 claims description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims 3
- 238000005538 encapsulation Methods 0.000 abstract description 8
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 description 5
- 238000005275 alloying Methods 0.000 description 4
- 239000010953 base metal Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- LFAGQMCIGQNPJG-UHFFFAOYSA-N silver cyanide Chemical compound [Ag+].N#[C-] LFAGQMCIGQNPJG-UHFFFAOYSA-N 0.000 description 2
- 229940098221 silver cyanide Drugs 0.000 description 2
- 238000005491 wire drawing Methods 0.000 description 2
- XVMSFILGAMDHEY-UHFFFAOYSA-N 6-(4-aminophenyl)sulfonylpyridin-3-amine Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=N1 XVMSFILGAMDHEY-UHFFFAOYSA-N 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011549 displacement method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/42—Coating with noble metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a kind of minimizing technology of silver-colored bonding wire surface impurity, used method is that the displacement between foreign metal and silver salt by silver-colored bonding wire surface reacts the foreign metal on silver-colored bonding wire surface is replaced into Argent grain to solve the problems, such as that there are foreign metals on silver-colored bonding wire surface.Compared with prior art, the present invention can allow silver-colored bonding wire surface that foreign metal is not present, to which silver-colored bonding wire be effectively ensured after encapsulation is bonded, under severe work Service Environment, the silver-colored electrolytic cell that formed between active foreign metal causes to corrode, and then influences the performance of entire electronic device；The surface integrity of the silver-colored bonding wire obtained after this method is processed can be splendid, and can largely improve the reliability of entire encapsulation component, and the present invention above has great practical significance to the package reliability application of silver alloy bonding wire.
Description
Technical field
The present invention relates to microelectronics Packagings, and the manufacturing field of bonding wire more particularly to a kind of silver alloy bonding wire is mutually used in conjunction
The method for generating removal surface impurity alloy with displacement reaction in last handling process.
Background technology
With the fast development of nowadays entire semicon industry, the power of the various electronic equipments in semiconductor industry also into
One step increases, and in entire microelectronic industry, encapsulation bonding plays a crucial role；Now with various electronics member devices
The increase of the integrated level of part step by step, the challenge that field is bonded in lead packages are also incrementally increasing, this is to leave encapsulation key for
The gap of conjunction is smaller and smaller, and the metallic bond plying for wire bonding also can only be increasingly thinner；
Nowadays bonding wire is one of the four big basic materials of microelectronics Packaging interconnection field key, in the production system of bonding wire
During making, needs diameter being gradually drawn to from the crin of several millimeters and meet the thin of a diameter of some tens of pm of requirement
Silk, and wire drawing module that this process will be leaned on wire drawing machine is realized.With the continuous reduction of bonding wire diameter, in order to
Ensure the higher electrical conductance and low resistivity that encapsulation is bonded, only silver-colored bonding wire has most preferably in terms of metallic bond plying
Conductivity and minimum conductivity.However, since there may be other metal impurities for the surface of silver alloy bonding wire, more
It is easy itself to form primary battery during service, causes the corrosion on silver-colored bonding wire surface.
Silver alloy bonding wire with hot spot can influence extremely to influence when EFO is handled the electric conductivity, binding affinity of encapsulation
Deng this is not allow to occur in microelectronics Packaging field, and there are no focusing on, to solve silver alloy bonding wire surface micro
The specific effective workaround of alloy impurity.
For the etching problem of current silver alloy bonding wire, be primarily due to silver coated in base metal surface it is uneven,
There is dew points, and eventually leading to silver surface, both in the presence of silver, there is also base metals, and general base metal is all more silver-colored more living
It sprinkles, so in harsh Service Environment (high temperature and humidity), will start oneself slowly to corrode, seriously affect the electricity of silver-colored bonding wire
Performance.
Since the activity of base metal is generally more silver-colored more active, so we are bonded using silver salt solution with silver alloy
Displacement reaction occurs for silk, and by replacing obtained silver, coated with silver bonding wire must be evenly coated to surface again at impurity alloy point
And complete silver alloy bonding wire, to prevent silver alloy bonding wire from reducing due to the corrosion of itself reliability of encapsulation.
Therefore, it finds the alloy that is coated on that a kind of method can make the Argent grain displaced fine and close and exposes point place and reality
The now method of the complete covering property of entire displacement reaction, and then it is pushed further into big rule of the silver-colored bonding wire in entire Packaging Industry
Mould using most important, thus solves the problems, such as to coat it is imperfect be it is very necessary, displacement method according to the present invention goes desilver
The method of bonding wire surface impurity can introduce the manufacture craft of silver alloy bonding wire as a kind of excellent impurity minimizing technology
In.
Invention content
In view of this, the present invention provides a kind of minimizing technology of silver-colored bonding wire surface impurity, this method is simple and effective, one
Aspect can immediately be post-processed after silver alloy bonding wire production process, and treatment process is simple, and the duration is short, also together
The entire production technologies of Shi Nengyu keep synchronous and carry out, and improve final inventory's yield rate, reduce production cost；On the other hand, by
Extremely consistency silver displacement layer can be obtained in alloy exposed area in controllable displacement reaction, it is final to realize entire silver bonding table
The complete cladding of face silver layer.
Above described to realize, the present invention uses the increase displacement after the production of silver alloy bonding wire terminates to remove impurity treatment
Technique, to realize the removal of wire surface foreign metal in process of production.It is as follows：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is dissolved in coordinative solvent, the complex solution of silver salt is obtained, ensures the pH of solution between 8-14；
(2) production silver alloy bonding wire is obtained to be cleaned up and dried with deionized water；
(3) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, guarantee is entirely existed by process
0.5-3s or so；
(5) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(6) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(7) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
A kind of minimizing technology of silver bonding wire surface impurity, after the silver alloy bonding wire surface prepared carries out decontamination
Processing, specific reacted with foreign metal generation displacement with silver salt generate one layer of silver layer realization at silver alloy bonding wire alloy exposing
Cladding processing, is finally neutralized with diluted acid, to reach the decontamination processing to silver alloy bonding wire.
Wherein it is possible to the diameter dimension of the copper bonding wire of protection is 10 μm -500 μm, it is silver-colored in used silver bonding wire
Content is between 1.00%-99.99%.
Wherein, include the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is dissolved in coordinative solvent, the complex solution of silver salt is obtained, ensures the pH of solution micro- 10；
(2) production silver alloy bonding wire is obtained to be cleaned up and dried with deionized water；
(3) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, ensures to be entirely 2s by process；
(4) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(5) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(6) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Wherein, silver-colored bonding wire is prepared to need to carry out deionized water cleaning, and is dried.
Wherein, specifically used silver salt is the complexing silver salt solution of chemical formula Ag [X] m；
Wherein, the complexing silver salt solution finally obtained is cyanide or cyanide-free solution；
Wherein, X be cyanide, iodide, thiocarbamide, rhodanide, bromide, thiosulfuric acid compound and citrate,
Thioacetic acid (TGA), dimercaprol dimercaptopropanol (BAL), thiosemicarbazides (TSC), diethyldithiocarbamate (DDTC), pyridine
In it is one or more, the value of m is between 0.1-8；
Wherein, the diluted acid of neutralization is sulfuric acid of the concentration between 1%-25%；
Wherein, the solvent composition of solution is water, ethyl alcohol, acetone, ether, benzene, cyaniding aqueous solutions of potassium, nitric acid, sulfuric acid, hydrogen-oxygen
Change one or more in potassium, potassium iodide, sodium thiosulfate, pyridine.
Wherein, solution content silver-colored later is prepared into ensure between 0.05-15g/L.
Wherein, the temperature of the silver salt solution in the silver salt slot used is 1 DEG C -60 DEG C.
Wherein, organic solvent needs the pH ranging from 7-13 kept.
Wherein, processing time of the whole bonding wire in silver salt is 0.1-150s.
Compared with prior art, the present invention haing the following advantages：
(1) there is the case where alloying metal exposing since the production process of silver alloy bonding wire may will produce silver surface,
And alloying metal silver relatively is more active, silver wire is just easily corroded under certain condition, the present invention using it is silver-colored relatively not
Activity replaces the silver in silver cyanide with the alloying metal of exposing, and then realizes the cladding again of silver, and method is simple to operation；
(2) since the complexation constant of silver cyanide is very big, so displacement reaction can occur in controlled range well,
Also it can go out to displace one layer of fine and close silver layer in original alloying metal, realize secondary cladding；
(3) salt used in the present invention is silver salt, and the silver layer being displaced combines together with original silver coating, so can be more
Good is applied to encapsulation bonding
(5) the displacement silver layer on silver-colored bonding wire surface can reach several atomic thickness since the densification of silver atoms stacks, and
And preparation process is simple, can reduce the relative amount of noble metal in decontamination processing procedure to the full extent, that is to say most
Big reduces production cost.
Specific implementation mode
With reference to specific example, the invention will be further described
Example one：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is dissolved in coordinative solvent, the complex solution of silver salt is obtained, ensures the pH of solution micro- 10；
(2) production silver alloy bonding wire is obtained to be cleaned up and dried with deionized water；
(3) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, ensures to be entirely 2s by process；
(4) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(5) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(6) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anticorrosive time under 50 DEG C, 60% damp condition that example one obtains can keep 6
A month or more.
Example two：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is dissolved in coordinative solvent, the complex solution of silver salt is obtained, ensures that the pH of solution is 11；
(2) production silver alloy bonding wire is obtained to be cleaned up and dried with deionized water；
(3) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, ensures to be entirely 2s by process；
(4) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(5) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(6) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anticorrosive time under 50 DEG C, 60% damp condition that example two obtains can keep
6.5 months or more.
Example three：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is dissolved in coordinative solvent, the complex solution of silver salt is obtained, ensures that the pH of solution is 12；
(2) production silver alloy bonding wire is obtained to be cleaned up and dried with deionized water；
(3) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, ensures to be entirely 2s by process；
(4) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(5) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(6) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anticorrosive time under 50 DEG C, 60% damp condition that example three obtains can keep 7
A month or more.
Example four：A kind of preparation process of wicker copper bonding wire, includes the following steps：
(1) it reacts required solution to displacement to pre-process, ensures the temperature of reactive tank between 5-40 DEG C,
Silver salt is dissolved in coordinative solvent, the complex solution of silver salt is obtained, between ensureing that the pH of solution is 13；
(2) production silver alloy bonding wire is obtained to be cleaned up and dried with deionized water；
(3) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, ensures to be entirely 2s by process；
(4) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(5) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(6) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
Specifically, the specific anticorrosive time under 50 DEG C, 60% damp condition that example one obtains can keep 8
A month or more.
Claims (13)
1. a kind of minimizing technology of silver bonding wire surface impurity, it is characterised in that：The silver alloy bonding wire surface prepared into
Row decontamination post-processes, and is specifically reacted with foreign metal generation displacement with silver salt and generates one at silver alloy bonding wire alloy exposing
Layer silver layer realizes cladding processing, is finally neutralized with diluted acid, to reach the decontamination processing to silver alloy bonding wire.
2. the minimizing technology of silver bonding wire surface impurity as described in claim 1, it is characterized in that the copper bonding wire that can be protected
Diameter dimension be 10 μm -500 μm, silver-colored content is between 1.00%-99.99% in used silver bonding wire.
3. the minimizing technology of silver bonding wire surface impurity as described in claim 1, it is characterised in that include the following steps：
(1) it reacts required solution to displacement to pre-process, ensures that the temperature of reactive tank, will be silver-colored between 5-40 DEG C
Salt is dissolved in coordinative solvent, obtains the complex solution of silver salt, ensures that the pH of solution is 10；
(2) production silver alloy bonding wire is obtained to be cleaned up and dried with deionized water；
(3) bonding wire after above-mentioned drying is passed through among replacing reaction treatment slot, ensures to be entirely 2s by process；
(4) it will be cleaned with deionized water by the bonding wire after coating film treatment,
(5) and then in 5% dilute sulfuric acid and the replacement Treatment liquid on bonding wire surface, deionized water is used in combination to clean；
(6) bonding wire after displacement reaction treatment is air-dried, waits for that solvent volatilizees, last coiling preserves.
4. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, which is characterized in that silver-colored bonding wire is prepared
It needs to carry out deionized water cleaning, and is dried.
5. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, specifically used silver salt is to change
Formula Ag [X]mComplexing silver salt solution.
6. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, the complexing silver salt finally obtained
Solution is cyanide or cyanide-free solution.
7. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, X be cyanide, iodide,
Thiocarbamide, rhodanide, bromide, thiosulfuric acid compound and citrate, thioacetic acid (TGA), dimercaprol dimercaptopropanol (BAL),
It is one or more in thiosemicarbazides (TSC), diethyldithiocarbamate (DDTC), pyridine, the value of m between
Between 0.1-8.
8. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, the diluted acid of neutralization is that concentration exists
Sulfuric acid between 1%-25%.
9. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, the solvent composition of solution is
In water, ethyl alcohol, acetone, ether, benzene, cyaniding aqueous solutions of potassium, nitric acid, sulfuric acid, potassium hydroxide, potassium iodide, sodium thiosulfate, pyridine
It is one or more.
10. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, it is prepared into after solution
The content of silver ensures between 0.05-15g/L.
11. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, in the silver salt slot used
The temperature of silver salt solution is 1 DEG C -60 DEG C.
12. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, it is characterized in that, organic solvent needs to keep
PH ranging from 7-14.
13. the minimizing technology of silver bonding wire surface impurity as claimed in claim 3, which is characterized in that whole bonding wire is in silver
Processing time in salt is 0.1-150s.
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Application publication date: 20180724 |