[go: up one dir, main page]

CN108364878B - Micro- assemble method and chip apparatus - Google Patents

Micro- assemble method and chip apparatus Download PDF

Info

Publication number
CN108364878B
CN108364878B CN201810102334.8A CN201810102334A CN108364878B CN 108364878 B CN108364878 B CN 108364878B CN 201810102334 A CN201810102334 A CN 201810102334A CN 108364878 B CN108364878 B CN 108364878B
Authority
CN
China
Prior art keywords
target
conductor material
soldered
spot
micro
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810102334.8A
Other languages
Chinese (zh)
Other versions
CN108364878A (en
Inventor
范志敏
丁庆
马建国
张齐军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangxi Huaxun Fangzhou Intelligent Technology Co ltd
Original Assignee
Shenzhen Huaxun Ark Technology Co Ltd
China Communication Microelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shenzhen Huaxun Ark Technology Co Ltd, China Communication Microelectronics Technology Co Ltd filed Critical Shenzhen Huaxun Ark Technology Co Ltd
Priority to CN201810102334.8A priority Critical patent/CN108364878B/en
Priority to PCT/CN2018/078900 priority patent/WO2019148598A1/en
Publication of CN108364878A publication Critical patent/CN108364878A/en
Application granted granted Critical
Publication of CN108364878B publication Critical patent/CN108364878B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/787—Means for aligning
    • H01L2224/78753—Means for optical alignment, e.g. sensors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
    • H01L2224/842—Applying energy for connecting
    • H01L2224/84238—Applying energy for connecting using electric resistance welding, i.e. ohmic heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85444—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/858—Bonding techniques
    • H01L2224/85801—Soldering or alloying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The present invention relates to a kind of micro- assemble methods, are electrically connected first object and the second target with conductor material.The described method includes: measuring the linear distance between the first object and second target under metallographic microscope；Prepare the conductor material according to the linear distance；Wherein, the length of the conductor material is greater than the 15% to 50% of the linear distance, and the both ends of the conductor material are respectively first end and second end；The first end of the conductor material is soldered to the first object, and the second end of the conductor material is soldered to second target.The invention further relates to a kind of chip apparatus.Above-mentioned micro- assemble method and chip apparatus, when the both ends of conductor material are respectively welded to first object and the second target, without to first object and the second target surface and conductor material do extra process.Therefore, the interconnection of first object and the second target is fairly simple, and packaging efficiency is higher.

Description

Micro- assemble method and chip apparatus
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of micro- assemble method and chip apparatus.
Background technique
Micro-package technique carries out integrated circuit bare chip, thin/thick film hybrid circuit, microminiature Surface Mount Component etc. High density interconnection constitutes the high density of three-dimensional structure, a kind of advanced electrical interconnection skill of multifunctional modular electronic product Art is more and more widely used in industries such as electronics, Aeronautics and Astronautics, ship, weapons.
In traditional Micro-package technique, using bonding techniques, conductor material is bonded on the substrate of chip, to realize Interconnection between the bare chip of integrated circuit, component or hybrid circuit.Traditional Micro-package technique is with gold thread bonding techniques Example.Before gold thread bonding, it is necessary to clean product to be bonded by plasma cleaning equipment, removal product bonding position surface is dirty Dye or oxide ensure that bonding position is very bright and clean, meet the requirement of gold thread bonding.And before bonding, product must be mentioned Preceding preheating, when bonding, need workbench to guarantee in certain temperature, provide enough thermal energy for bonding, also need after bonding certain Temperature fall time.And gold thread connects and needs preferable skill, technical ability.Therefore, existing gold thread bonding techniques para-linkage position The cleannes on surface are more demanding, and operation is more complicated, and operation difficulty is higher, leads to the low efficiency of Electronic Assemblies.
Summary of the invention
Based on this, it is necessary to, behaviour more demanding for the cleannes of existing gold thread bonding techniques para-linkage surface of position It makes comparisons complexity, operation difficulty is higher, the problem of leading to the low efficiency of Electronic Assemblies, provides a kind of micro- assemble method and chip dress It sets.
A kind of micro- assemble method is electrically connected first object and the second target on chip with conductor material.The side Method includes:
The linear distance between the first object and second target is being measured under metallographic microscope；
Prepare the conductor material according to the linear distance；Wherein, the length of the conductor material is greater than described The 15% to 50% of linear distance, the both ends of the conductor material are respectively first end and second end；
The first end of the conductor material is soldered to the first object, and by the second end of the conductor material It is soldered to second target.
Above-mentioned micro- assemble method and chip apparatus, by the way that the first end of conductor material is soldered to first object, and will The second end of conductor material is soldered to the second target, is realized electrically between first object and the second target by conductor material The interconnection of first object and the second target is realized in connection.And the both ends of conductor material are respectively welded to first object When with the second target, without to first object and the second target surface and conductor material do extra process.Therefore, above-mentioned micro- In assemble method, the interconnection of first object and the second target is fairly simple, and packaging efficiency is higher.
It is electrically connected the first object and second target using spot-welding equipment in one of the embodiments,；
The first end by the conductor material is soldered to the first object, and by the of the conductor material The step of two ends are soldered to second target include:
The position for adjusting the first object, makes the plumb joint of spot-welding equipment described in the first object face, and by institute First end is stated to be sent between the first object and the plumb joint；
The first end is soldered to the first object with the spot-welding equipment；
Mobile second target, makes plumb joint described in the second target face, and the second end is sent to institute It states between the second target and the plumb joint；
The second end is soldered to second target with the spot-welding equipment.
The adjustment first object in one of the embodiments, sets spot welding described in the first object face Standby plumb joint, and the step of first end is sent between the first object and the plumb joint is under the microscope Operation；
Movement second target, makes plumb joint described in the second target face, and the second end is transmitted It is to operate under the microscope to the step of between second target and the plumb joint.
The first object is a pad in one of the embodiments, and second target is a golden finger.
The material of the conductor material is gold in one of the embodiments,.
The width of the conductor material is 150 μm in one of the embodiments,.
The width of the conductor material is in the range of 75 μm to 300 μm in one of the embodiments,.
A kind of chip apparatus, including conductor material, first object and the second target；The conductor material passes through above-mentioned The first object and second target are electrically connected by described in any item methods.
Detailed description of the invention
Fig. 1 is the schematic diagram of the welding equipment of an embodiment；
Fig. 2 is the flow diagram of micro- assemble method of an embodiment；
Fig. 3 is the flow diagram of micro- assemble method of second embodiment.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention Specific embodiment be described in detail.
A kind of micro- assemble method is electrically connected first object and the second target with conductor material, that is, uses conductor material Interconnect first object and the second target.Generally, the width of conductor material is in the range of 75 μm to 300 μm.This width The conductor material of degree not only can satisfy the interconnection demand of first object and the second target, but also can save space.The present embodiment In, the material of conductor material is gold, i.e., conductor material is gold ribbon.Gold ribbon Nature comparison is stablized, and conductive characteristic is preferable, the service life Also longer.In the present embodiment, the width of gold ribbon is 150 μm.In other embodiments, conductor material can also be other materials The conductor material of matter, such as aluminium strip, copper strips, alloy strip etc., unlike material has different characteristics.It can be selected according to demand It selects.
In the present embodiment, first object is a pad, and the second target is a golden finger.First object in present embodiment The pad and golden finger that need to interconnect are respectively referred to the second target.Specifically, pad can be the pad in a chip.Golden finger It can be the golden finger in a pcb board.
It should be noted that first object is not limited to pad, the second target is not limited to golden finger, first object and Two targets can be two pads for needing to interconnect on chip, and first object and the second target can also be two on a pcb board A golden finger, as long as can be using micro- assemble method in present embodiment between two targets for needing to interconnect.
Fig. 1 is the schematic diagram of the welding equipment 100 of an embodiment.In the present embodiment, package system can be filled by means of micro-group Complete the interconnection of first object and the second target.Micro- package system can be intelligence system.Micro- package system includes welding equipment 100, microscope (not shown).As shown in Figure 1, welding equipment 100 includes plumb joint 120.In the present embodiment, plumb joint 120 will Gold ribbon is respectively welded to first object and the second target.The position fixing process of first object and the second target and conductor material can be with It operates under the microscope, for example, first object and the second target and conductor material can be amplified 30 times to 40 times by microscope, with So that accurate positioning.
Fig. 2 is the flow diagram of micro- assemble method of an embodiment.Above-mentioned micro- assemble method includes:
Step S120 is measuring the linear distance between first object and the second target under metallographic microscope.
Specifically, it has been observed that first object and the second target will be interconnected by gold ribbon, therefore, before interconnection, work people Member needs to cut the gold ribbon of sufficient length from pre-prepd gold ribbon volume.But due to the higher cost of golden material, gold ribbon is again Cannot be too long and cause to waste.Therefore, the length of gold ribbon needs just right.Before first object and the interconnection of the second target, The linear distance of first object and the second target is measured, first to cut the gold ribbon of appropriate length according to the linear distance.This implementation In example, the linear distance between first object and the second target can be being measured under metallographic microscope, so that linear distance It is more accurate to measure, to more accurately cut gold ribbon.
Step S140 prepares conductor material according to linear distance.
Specifically, the both ends of conductor material are respectively first end and second end.According to first object and the second target it Between linear distance, cut the gold ribbon of appropriate length from gold ribbon volume.That is the both ends of gold ribbon are respectively first end and second end.Into One step, the gold ribbon of lower appropriate length can be cut from gold ribbon volume according to linear distance by staff, it can also be by micro-group Dress system cuts the gold ribbon of appropriate length from gold ribbon volume automatically.In the present embodiment, the length of conductor material be greater than straight line away from From that is, the length of gold ribbon is greater than linear distance.In this way it can be ensured that the length of gold ribbon connects first object and the second mesh enough Mark, avoids gold ribbon from connecting first object and the second target in the case where stretching, so that it is guaranteed that the reliability of gold ribbon.Conductor material The length of band is greater than the 15% to 50% of linear distance.I.e. the length of conductor material can for linear distance 115% to In the range of 150%.For example, the length of conductor material can be the 130% of linear distance.In this way it can be ensured that conductor material Material strip can realize the flexible interconnection of first object and the second target around the component between first object and the second target. Although being equipped with more complicated component i.e. between first object and the second target, conductor material all long enoughs, and can incite somebody to action First object and the connection of the second aim curve.Also, if conductor material long enough, first object and the second target it Between conductor material can arbitrarily place.In this way, bigger space can be designed between first object and the second target, with More components are set, so that the integrated level of the circuit between first object and the second target is higher.
The first end of conductor material is soldered to first object, and the second end of conductor material is welded by step S160 It is connected to the second target.
Specifically, the first end of gold ribbon is soldered to first object by welding equipment 100, and the second end of gold ribbon is soldered to Second target.In the present embodiment, welding equipment 100 is spot-welding equipment.Further, spot-welding equipment is resistance spot welding equipment.I.e. First object and the second target are electrically connected using spot-welding equipment.Spot-welding equipment is using columnar electrode, in first object and gold The welding method of solder joint is formed between the first end of band.The operating voltage of spot-welding equipment in the range of 0.85-1.0V, hold by welding The continuous time is in the range of 8-12ms.When spot welding, make the first end in contact of first object and gold ribbon, then in first object and gold Turn-on current between the first end of band.It is moulded under the action of resistance heat in the contact position of the first end of first object and gold ribbon Property deformation, be allowed to form metal bonding, to form new solder joint.In this way, just the first end of first object and gold ribbon is welded on Together.Second end and same Fundamentals of Welding for the second target and gold ribbon.
Above-mentioned micro- assemble method, by the way that the first end of conductor material is soldered to first object, and by conductor material Second end be soldered to the second target, between first object and the second target by conductor material realize be electrically connected, i.e., in fact The interconnection of existing first object and the second target.And the both ends of conductor material are respectively welded to first object and the second target When, without to first object and the second target surface and conductor material do extra process.It i.e. need not be to first object, second Target and the first end and second end of conductor material are cleaned, also need not be to first object, the second target and conductor material The assembling environment of band is heated.Therefore, in above-mentioned micro- assemble method, the interconnection of first object and the second target is fairly simple, Packaging efficiency is higher.Also, the first end of conductor material is welded on first object, welds the second end of conductor material It connects in the second target, so that it is guaranteed that the connection effect at first object and the second target is preferable.
Fig. 3 is the flow diagram of micro- assemble method of second embodiment.The first end of conductor material is soldered to One target, and the second end of conductor material is soldered to the second target, so that the step of conductor material forms interconnecting piece, i.e., Step S160 includes:
Step S162 adjusts the position of first object, makes the plumb joint 120 of first object face spot-welding equipment, and by One end is sent between first object and plumb joint 120.
Specifically, staff observes first object under the microscope, and adjusts microscope, until seeing the first mesh Mark.Staff adjusts the position of first object, so that the positive butt joint 120 of first object, and the first end of gold ribbon is transmitted To between first object and plumb joint 120, and the first end of gold ribbon is in contact with first object.
First end is soldered to first object with spot-welding equipment by step S164.
Specifically, micro- package system starts spot-welding equipment, so that first end is soldered to first object by spot-welding equipment.This Sample can complete the connection of the first end of gold ribbon and the first object of chip.It in one embodiment, can also be by manual operation point First end is soldered to first object by soldering equipment.
Step S166, mobile second target make the positive butt joint of the second target, and by second end be sent to the second target and Between plumb joint.
Specifically, after first end and first object welding, continue the position for adjusting chip under the microscope, make work The second target can be seen by making personnel, and make the positive butt joint 120 of the second target, and by second end be sent to the second target and Between plumb joint 120, the second end of gold ribbon is contacted with the second target, prepares welding.
Second end is soldered to the second target with spot-welding equipment by step S168.
Specifically, micro- package system starts spot-welding equipment, so that second end is soldered to the second target by spot-welding equipment.This Sample can complete the second end of gold ribbon and the connection of the second target.In one embodiment, it can also be set by manual operation spot welding It is standby, second end is soldered to the second target.
In this way, the welding between gold ribbon and first object and the second target can be made more accurate, so that electrical connection Effect is preferable, lasts a long time.
A kind of chip apparatus, including conductor material, first object and the second target；More than the conductor material passes through The first object and second target are electrically connected by method described in any embodiment.
Said chip device, by the way that the first end of conductor material is soldered to first object, and by conductor material Second end is soldered to the second target, is realized and is electrically connected by conductor material between first object and the second target, that is, realized The interconnection of first object and the second target.And the both ends of conductor material are respectively welded to first object and the second target When, without to first object and the second target surface and conductor material do extra process.Therefore, above-mentioned micro- assemble method In, the interconnection of first object and the second target is fairly simple, and packaging efficiency is higher.
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.

Claims (7)

1. a kind of micro- assemble method, which is characterized in that be electrically connected first object and the second target with conductor material, the side Method includes:
The linear distance between the first object and second target is being measured under metallographic microscope；
Prepare the conductor material according to the linear distance；Wherein, the length of the conductor material is greater than the straight line The 15% to 50% of distance, the both ends of the conductor material are respectively first end and second end；
The first end of the conductor material is soldered to by the first object using resistance spot welding process, and by the conductor material The second end of material strip is soldered to second target, in welding using microscope to the first end, the first object, institute It states second end and second target is positioned.
2. the method according to claim 1, wherein making the first object and described second using spot-welding equipment Target electrical connection；
The first end by the conductor material is soldered to the first object, and by the second end of the conductor material The step of being soldered to second target include:
The position for adjusting the first object, makes the plumb joint of spot-welding equipment described in the first object face, and by described One end is sent between the first object and the plumb joint；
The first end is soldered to the first object with the spot-welding equipment；
Mobile second target, makes plumb joint described in the second target face, and the second end is sent to described the Between two targets and the plumb joint；
The second end is soldered to second target with the spot-welding equipment.
3. second target is the method according to claim 1, wherein the first object is a pad One golden finger.
4. the method according to claim 1, wherein the material of the conductor material is gold.
5. according to the method described in claim 4, it is characterized in that, the width of the conductor material is 150 μm.
6. the method according to claim 1, wherein the width of the conductor material is at 75 μm to 300 μm In range.
7. a kind of chip apparatus, which is characterized in that including conductor material, first object and the second target；The conductor material The first object and second target are electrically connected by band by method as claimed in any one of claims 1 to 6.
CN201810102334.8A 2018-02-01 2018-02-01 Micro- assemble method and chip apparatus Active CN108364878B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201810102334.8A CN108364878B (en) 2018-02-01 2018-02-01 Micro- assemble method and chip apparatus
PCT/CN2018/078900 WO2019148598A1 (en) 2018-02-01 2018-03-14 Micro-assembly method and chip device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201810102334.8A CN108364878B (en) 2018-02-01 2018-02-01 Micro- assemble method and chip apparatus

Publications (2)

Publication Number Publication Date
CN108364878A CN108364878A (en) 2018-08-03
CN108364878B true CN108364878B (en) 2019-09-17

Family

ID=63004218

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810102334.8A Active CN108364878B (en) 2018-02-01 2018-02-01 Micro- assemble method and chip apparatus

Country Status (2)

Country Link
CN (1) CN108364878B (en)
WO (1) WO2019148598A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2843717Y (en) * 2005-04-05 2006-12-06 江苏大学 Hot-press welder of chip external lead wire linkage of press-resistant sensor
CN101740556A (en) * 2009-12-23 2010-06-16 四川龙瑞微电子有限公司 Hybrid microwave integrated circuit
CN103782383A (en) * 2011-07-12 2014-05-07 泰塞拉公司 De-skewed multi-die packages
CN105518856A (en) * 2013-07-03 2016-04-20 罗森伯格高频技术有限及两合公司 Electronic device having leads with selectively modified electrical properties

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102761311B (en) * 2012-07-20 2014-11-19 深圳市通创通信有限公司 Micro assembly process for millimeter-wave circuit
CN103500736B (en) * 2013-08-22 2017-04-26 上海华虹宏力半导体制造有限公司 Chip packaging structure and chip packaging method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN2843717Y (en) * 2005-04-05 2006-12-06 江苏大学 Hot-press welder of chip external lead wire linkage of press-resistant sensor
CN101740556A (en) * 2009-12-23 2010-06-16 四川龙瑞微电子有限公司 Hybrid microwave integrated circuit
CN103782383A (en) * 2011-07-12 2014-05-07 泰塞拉公司 De-skewed multi-die packages
CN105518856A (en) * 2013-07-03 2016-04-20 罗森伯格高频技术有限及两合公司 Electronic device having leads with selectively modified electrical properties

Also Published As

Publication number Publication date
CN108364878A (en) 2018-08-03
WO2019148598A1 (en) 2019-08-08

Similar Documents

Publication Publication Date Title
CN104507271B (en) The PCBA processing methods and PCBA board combined based on plug-in element technique and paster technique
CN104221099B (en) Resistor and its mounting structure
US4908938A (en) Method for repairing interconnect interruptions by bridging with congruent preforms
Tu et al. Comparative study of micro-BGA reliability under bending stress
JP2009262159A (en) Direct welding apparatus and welding method
JP2011000639A (en) Heater chip and welding device
CN108364878B (en) Micro- assemble method and chip apparatus
US6245582B1 (en) Process for manufacturing semiconductor device and semiconductor component
CN106031307B (en) Technique for producing power printed circuit and the power printed circuit obtained by this technique
US10834812B2 (en) Wiring board
CN112788845A (en) Non-conductive film having heating function and electronic device
JP2017133928A (en) Shunt resistor, manufacturing method thereof, and current detection device using shunt resistor
US3418422A (en) Attachment of integrated circuit leads to printed circuit boards
Branzei et al. Lead/lead free solder joints comparative electrical tests as function of microstructure and soldering thermal profile
TW201626412A (en) Method for manufacturing laminated ceramic electronic device and apparatus thereof
CN115832124A (en) Full-automatic COB patch welding method and system
JP4266331B2 (en) Manufacturing method of probe unit
Varzaru et al. A Study of SW150 Conductive Paste as a possible use in Solderless Assembly for Electronics
JP3175404U (en) Connector mounting structure on circuit board
CN106793466B (en) circuit board and mobile terminal
Illyefalvi-Vitez et al. Laser soldering for lead-free assembly
Happonen et al. Bonding strength in flexible electronics
CN206134677U (en) A high-power, high-resistance precision chip resistor with a metal plate structure
CN217336090U (en) PCB of LED switching power supply
CN116298443B (en) Preparation method of flow divider and processing equipment of flow divider

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
PP01 Preservation of patent right

Effective date of registration: 20210630

Granted publication date: 20190917

PP01 Preservation of patent right
PD01 Discharge of preservation of patent

Date of cancellation: 20230421

Granted publication date: 20190917

PD01 Discharge of preservation of patent
TR01 Transfer of patent right

Effective date of registration: 20230620

Address after: 518102 East, 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province

Patentee after: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd.

Patentee after: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd.

Address before: 518101 East, 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province

Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd.

Patentee before: CHINA COMMUNICATION TECHNOLOGY Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20230718

Address after: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province

Patentee after: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd.

Address before: 518102 East, 2nd floor, building 37, chentian Industrial Zone, Baotian 1st Road, Xixiang street, Bao'an District, Shenzhen City, Guangdong Province

Patentee before: SHENZHEN HUAXUN FANGZHOU MICROELECTRONIC SCIENCE & TECHNOLOGY Co.,Ltd.

Patentee before: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd.

TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20231128

Address after: Building 7-6, Industrial Control Cloud Creation Port, No. 58 Hongtu Avenue, Economic Development Zone, Xinjian District, Nanchang City, Jiangxi Province, 330000

Patentee after: Jiangxi Huaxun Fangzhou Intelligent Technology Co.,Ltd.

Address before: 518000 107, building 37, chentian Industrial Zone, chentian community, Xixiang street, Bao'an District, Shenzhen, Guangdong Province

Patentee before: Shenzhen Huaxun ark Intelligent Information Technology Co.,Ltd.

TR01 Transfer of patent right