CN108511420B - Semiconductor structure and chip - Google Patents
Semiconductor structure and chip Download PDFInfo
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- CN108511420B CN108511420B CN201810437298.0A CN201810437298A CN108511420B CN 108511420 B CN108511420 B CN 108511420B CN 201810437298 A CN201810437298 A CN 201810437298A CN 108511420 B CN108511420 B CN 108511420B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 67
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000005070 sampling Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
A semiconductor structure and a chip. The semiconductor structure includes: a semiconductor substrate; a diode located in the semiconductor substrate, the diode including a first type region and a second type region; a voltage dividing resistor positioned above the first type region, with an insulating layer between the voltage dividing resistor and the first type region; the voltage dividing resistor is provided with a first end, a voltage dividing end and a second end, wherein the first end is electrically connected with the first type region, and the second end is electrically connected with the second type region. The semiconductor structure can enable the corresponding chip to have reliable high-voltage resistance without matching with an independent voltage dividing resistor on the PCB.
Description
Technical Field
The present invention relates to the field of semiconductors, and more particularly, to a semiconductor structure and a chip.
Background
The chip is typically integrated on PCB (Printed Circuit Board) for use. The PCB has components, such as a resistor and a capacitor, integrated thereon. These components increase the cost and, in order to save costs, the fewer these individual resistors and capacitors are, the better.
However, when the chip is used, the situation that the voltage dividing resistor is matched is often encountered. Taking a chip adopting a COMS process as an example, the MOS tube in the chip is usually resistant to more than ten volts, and when the voltage exceeds the voltage resistance of the chip, the MOS tube is broken down, so that the corresponding chip cannot work normally. In structures such as analog integrated circuits employing the cmos process, the sampling end of the corresponding OVP (Over Voltage Protection, overvoltage protection or overvoltage protection) module is usually a MOS transistor, so the corresponding input voltage cannot be too high.
In order to make such chips useful in higher voltage applications (e.g., in a tens of volts environment), it is necessary to add a separate resistive device to the PCB to achieve voltage division. At this time, a voltage dividing resistor needs to be integrated on the PCB, and the voltage dividing resistor is connected to high-voltage division, so that a chip integrated on the PCB can obtain proper voltage. In this case, an additional integration of the voltage dividing resistor is required. Moreover, the external voltage dividing resistor has large volume and large power, and causes the complexity of a circuit and the increase of cost.
Disclosure of Invention
The invention solves the problem of providing a semiconductor structure and a chip, so that the high voltage resistance of the chip can be reliably improved without an external voltage divider, thereby simplifying a circuit, reducing corresponding power and lowering cost.
In order to solve the above problems, the present invention provides a semiconductor structure, comprising: a semiconductor substrate; a diode located in the semiconductor substrate, the diode including a first type region and a second type region; a voltage dividing resistor positioned above the first type region, with an insulating layer between the voltage dividing resistor and the first type region; the voltage dividing resistor is provided with a first end, a voltage dividing end and a second end, wherein the first end is electrically connected with the first type region, and the second end is electrically connected with the second type region.
Optionally, the first type region is surrounded by the second type region on sides.
Optionally, the voltage dividing resistor is of a multiple spiral structure, and the inner end of the spiral structure is the first end of the voltage dividing resistor; the outer end of the spiral structure is the second end of the divider resistor.
Optionally, the top view shape of the first type region is circular, and the top view shape of the second type region is circular.
Optionally, the first type region is an N type region, and the second type region is a P type region.
Optionally, the N-type region includes a first N-region and a second N-region surrounding a side of the first N-region.
Optionally, the N-type region further includes a third N-region, and the third N-region is located below the first N-region and at least part of the second N-region.
Optionally, the P-type region includes a first P-region and a second P-region located below the first P-region.
In order to solve the above problems, the present invention also provides a chip having the semiconductor structure as described above therein.
Optionally, the chip is a power management chip, and the voltage dividing end of the semiconductor structure is electrically connected with an overvoltage protection comparator.
In one aspect of the technical scheme of the invention, the divider resistor which is welded on the PCB originally and used for the high-voltage sampling end of the chip is integrated into the semiconductor substrate, at the moment, the divider resistor on the PCB can be integrated into the chip, so that a circuit is simplified, the chip with the semiconductor structure has high-voltage resistance, the area of the chip is saved, and the cost is saved.
Meanwhile, after the voltage dividing resistor is integrated into the semiconductor substrate (chip), due to the fact that the voltage dividing resistor is matched with the diode structure, the fact that the voltage dividing resistor is not easy to burn out when the semiconductor structure is subjected to corresponding circuit protection can be guaranteed, and therefore the high-voltage resistance function of the semiconductor structure is reliably achieved. The voltage dividing resistor can not be burnt out, because the whole voltage dividing resistor is connected with the diode in parallel, the current flowing through the voltage dividing resistor is small, and the current is born by the diode. In addition, the corresponding power (power consumption) is also reduced as compared with the case where the voltage dividing resistor is not integrated into the semiconductor substrate (chip).
Drawings
FIG. 1 is a schematic top view of a semiconductor structure according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a semiconductor structure according to an embodiment of the present invention;
fig. 3 is a schematic circuit diagram of a portion of a chip according to an embodiment of the present invention.
Detailed Description
In the structures such as the analog integrated circuit, as described in the background art, since the corresponding chip is applied in the high voltage field, for example, in an environment of more than tens of volts, an independent voltage dividing resistor device is added on the PCB to realize voltage division (specifically, for example, a voltage dividing resistor is welded on the PCB and an OVP collecting end of the chip is connected), the number of the independent devices is increased, the area of the whole structure is larger, and the cost is higher.
Therefore, the invention provides a semiconductor structure, which directly makes a corresponding voltage division circuit on a semiconductor substrate, and the corresponding semiconductor substrate can be the semiconductor substrate of a chip at the same time, at the moment, the voltage division structure is directly integrated in the chip, so that the whole structure of the circuit is simplified, and the cost is reduced.
The present invention will be described in detail with reference to the accompanying drawings for more clear illustration.
Referring to fig. 1 and 2 in combination, fig. 1 is a schematic top view of a semiconductor structure, and fig. 2 is a schematic cross-sectional view of the semiconductor structure.
As can be seen from fig. 2, the semiconductor structure comprises a semiconductor substrate 100.
In this embodiment, the semiconductor substrate 100 may be a silicon substrate or other substrates. The semiconductor substrate 100 may be a P-type substrate.
The semiconductor structure further includes a diode (not labeled) located in the semiconductor substrate 100, the diode including a first type region 110 and a second type region 120.
As can be seen from fig. 2, the semiconductor structure further comprises a voltage dividing resistor 130. Fig. 1 shows that the voltage dividing resistor 130 has a first terminal a, a voltage dividing terminal B, and a second terminal C, the first terminal a is electrically connected to the first type region 110, and the second terminal C is electrically connected to the second type region 120. In the cross-sectional structure of fig. 2, the first end a is not electrically connected to the first type region 110, and the second end C is electrically connected to the second type region 120, because fig. 2 does not further show a structure of a further upper layer of the voltage dividing resistor 130, in which the lead-out end a of the first type region 110 shown in fig. 2 is electrically connected to the first end a of the voltage dividing resistor 130, and the lead-out end C of the second type region 120 is electrically connected to the second end C of the voltage dividing resistor 130.
In the top plan view of fig. 1, the voltage dividing resistor 130 has a multiple spiral structure, and the inner end of the spiral structure is the first end a of the voltage dividing resistor 130. The outer end of the spiral structure is the second end C of the divider resistor 130. That is, the loop (spiral structure) between the first end a and the second end C is the voltage dividing resistor 130.
As can be seen from fig. 2, the voltage dividing resistor 130 is located above the first type region 110, and a first insulating layer 140 is disposed between the voltage dividing resistor 130 and the first type region 110. The first insulating layer 140 serves to insulate the shunt resistor 130 and the first type region 110 from each other. The first insulating layer 140 may be simultaneously located over a portion of the second type region 120. Also, the first insulating layer 140 may also serve as a doping mask layer for each of the heavily doped regions mentioned later.
As can be seen from fig. 2, the space between the spiral structures of the voltage dividing resistor 130 is filled with the second insulating layer 150.
In this embodiment, the first type region 110 is an N-type region, and the second type region 120 is a P-type region.
As shown in fig. 2, the N-type region further includes a first N-region 111 and a second N-region 112 surrounding sides of the first N-region 111.
In this embodiment, the first N region 111 may be a Low Voltage N well (Low Voltage N-well), and the second N region 112 may be a High Voltage N well (High Voltage N-well). Accordingly, the doping concentration of the first N region 111 may be higher than that of the second N region 112.
As shown in fig. 2, the N-type region further includes a third N-region 113, and the third N-region 113 is located below the first N-region 111 and at least a portion of the second N-region 112.
In this embodiment, the third N region 113 may be a Deep N-well (Deep N-well), and the provision of the third N region 113 may improve the high voltage resistance of the diode.
As shown in fig. 2, the P-type region may include a first P-region 121 and a second P-region 122 located under the first P-region 121.
In this embodiment, the first P region 121 may be a P-well (P-well), the second P region 122 may be a P-type buried layer (buried layer), and the second P region 122 may improve the voltage-withstanding performance of the diode.
In this embodiment, as can be seen in fig. 1 and 2, the side surface of the first type region 110 is surrounded by the second type region 120, and the bottom surface of the first type region 110 is typically a corresponding substrate.
In fig. 1, the top view of the first type of region 110 is circular, and the top view of the second type of region 120 is circular, which surrounds the circular shape. In fig. 2, two outer side edges of the first type region 110 are shown adjacent to inner side edges of the second type region 120, specifically, an outer edge of the second N region 112 is shown adjacent to an inner edge of the first P region 121, the inner and outer relationship being illustrated with the first N region 111 as an inner center.
In other embodiments, the top view shape of the first type region may not be necessarily circular, for example, may be elliptical or other shape, and the top view shape of the corresponding second type region may be other shape.
It should be noted that the first type region 110 may further include an N-type heavily doped region (n+), where the N-type heavily doped region is located in the first N region 111. The N-type heavily doped regions may be utilized to connect with corresponding conductive structures, which may be metal lines 160. Similarly, the second type region 120 may further include a P-type heavily doped region (p+), which is located in the first P region 121. The P-type heavily doped regions may be utilized to connect with corresponding conductive structures, which may be metal lines 160.
In this embodiment, the first terminal a of the voltage dividing resistor 130 may be a power input terminal, and may be a high voltage input terminal. The high voltage referred to in this embodiment is a relative concept. The high voltage refers to that the semiconductor structure of the embodiment may be applied to various chips, and the high voltage is higher than the original voltage of the chip, or higher than the operating voltage of the circuit in which the semiconductor structure is matched. For example, if the chip is to be used in an environment of 100V, the first terminal a of the voltage dividing resistor 130 may need to be connected to a voltage exceeding 100V to calculate a high voltage, and if the chip is to be used in an environment of 10V, the voltage dividing resistor 130 may be connected to a voltage exceeding 10V to calculate a high voltage. For another example, for a power management chip, a voltage of 40V or higher is typically a high voltage.
In this embodiment, the diode is selected to be a high voltage diode corresponding to the above-described relative concept of high voltage, that is, the diode having such a structure can resist high voltage. Because, if a common diode is selected (e.g., a diode having the same operating voltage range as the chip operating voltage range), the corresponding voltage dividing resistor 130 may be burned out during use. This is because the present embodiment requires a diode to help resist high voltage, preventing the voltage dividing resistor 130 from being burned out.
In this embodiment, the voltage dividing terminal B is an output terminal after voltage division, and the voltage dividing terminal B may be used for electrically connecting with a sampling terminal of the overvoltage protection circuit. In this embodiment, the second end C may be grounded.
The semiconductor structure provided in this embodiment may belong to an analog circuit structure, but the semiconductor structure may be used in an analog circuit or a digital circuit. That is, the semiconductor structure provided in this embodiment can be employed regardless of whether it is an analog chip or a digital chip.
In one aspect of the technical solution of the present invention, the voltage divider originally soldered on the PCB and used for the high voltage sampling end of the chip is integrated into the semiconductor substrate (the voltage divider resistor 130 is integrated into the semiconductor substrate 100), which is equivalent to integrating the independent voltage divider on the PCB into the chip, simplifying the circuit, and not only achieving the purpose of high voltage resistance of the chip with the semiconductor structure, but also saving the chip area, thereby saving the cost.
Meanwhile, after the voltage dividing resistor 130 is integrated into the semiconductor substrate (chip), due to the cooperation of the voltage dividing resistor 130 and the diode structure, the semiconductor structure can be ensured not to be burnt easily when the corresponding circuit protection is carried out, so that the high voltage resistance function of the semiconductor structure is reliably realized. The voltage dividing resistor 130 can not be burned out because the entire voltage dividing resistor 130 is connected in parallel with the diode at this time, the current flowing through the voltage dividing resistor 130 is small, and the current (active energy) is received by the diode. In addition, the corresponding power (power consumption) is also reduced as compared with the case where the voltage dividing resistor is not integrated into the semiconductor substrate (chip).
The embodiment of the invention also provides a chip, which has the semiconductor structure provided by the embodiment, and therefore, the content of the semiconductor structure can be referred to as the corresponding content of the embodiment.
In this embodiment, the chip may be a power management chip.
In addition to the semiconductor structure provided in the foregoing embodiment, in this embodiment, the chip further connects the voltage dividing terminal B of the semiconductor structure to the overvoltage protection comparator 200, specifically connects the voltage dividing terminal B to the sampling terminal of the overvoltage protection comparator 200, where the sampling terminal usually employs a MOS transistor. The other end of the overvoltage protection comparator 200 is usually a reference voltage terminal, and is used for connecting to a reference voltage Vref, and the corresponding circuit diagram structure is shown in fig. 3 (fig. 3 shows a corresponding circuit, i.e., a part of the circuit, in the chip).
In fig. 3, the circuit structure in the dashed line box S1 represents the circuit structure corresponding to the semiconductor structure except for the overvoltage protection comparator 200, and thus the semiconductor structure corresponding circuit provided in the foregoing embodiment may be combined with reference to fig. 3.
As can be seen from fig. 3, two ends of the diode D0 of the semiconductor structure (corresponding to the first-type region 110 terminal a and the second-type region 120 terminal C of the foregoing embodiment) are electrically connected to the first and second terminals a and C of the voltage dividing resistor, respectively, the voltage dividing resistor including a resistor R1 and a resistor R0, wherein the resistor R1 is a resistor between the first and second terminals a and B of the voltage dividing resistor, and the resistor R0 is a resistor between the voltage dividing terminal B and the second terminal C of the voltage dividing resistor.
Since the semiconductor structure of this embodiment is the semiconductor structure provided in the above embodiment, as can be seen from the cross-sectional structure shown in fig. 2 and the circuit structure shown in fig. 3, the voltage dividing resistor 130 is integrated into the (high voltage) diode in this embodiment, so that a suitable voltage can be provided to the sampling end of the overvoltage protection comparator 200, and the structure can save area and resist high voltage. Meanwhile, the voltage divider (voltage divider resistor) which is originally and independently manufactured on the PCB is integrated into the chip, so that the cost is saved. This is because, one of the basic principles of semiconductor design is to make the area of the chip as small as possible, so that as many chips as possible are produced on a piece of silicon wafer, which results in a relatively low cost, and this embodiment of the present invention has the advantage that the area of the chip using this semiconductor structure can be saved by integrating the voltage dividing resistor 130 into the high voltage diode.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be made by one skilled in the art without departing from the spirit and scope of the invention, and the scope of the invention should be assessed accordingly to that of the appended claims.
Claims (6)
1. A semiconductor structure, comprising:
A semiconductor substrate;
A diode located in the semiconductor substrate, the diode including a first type region and a second type region; characterized by further comprising:
a voltage dividing resistor positioned above the first type region, with an insulating layer between the voltage dividing resistor and the first type region; the voltage dividing resistor is provided with a first end, a voltage dividing end and a second end, the first end is electrically connected with the first type region, and the second end is electrically connected with the second type region;
the sides of the first type region are surrounded by the second type region;
the first type region is an N type region, and the second type region is a P type region;
the N-type region comprises a first N region and a second N region surrounding the side surface of the first N region;
The N-type region further comprises a third N region, and the third N region is positioned below the first N region and at least part of the second N region;
The third N region is a deep well region.
2. The semiconductor structure of claim 1, wherein the divider resistor is a multiple spiral structure, the inner end of the spiral structure being the first end of the divider resistor; the outer end of the spiral structure is the second end of the divider resistor.
3. The semiconductor structure of claim 2, wherein a top view of the first type region is circular and a top view of the second type region is annular.
4. The semiconductor structure of claim 1, wherein the P-type region comprises a first P-region and a second P-region located below the first P-region.
5. A chip having the semiconductor structure of any one of claims 1 to 4 therein.
6. The chip of claim 5, wherein the chip is a power management chip, and the voltage divider terminal of the semiconductor structure is electrically connected to an overvoltage protection comparator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810437298.0A CN108511420B (en) | 2018-05-09 | 2018-05-09 | Semiconductor structure and chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810437298.0A CN108511420B (en) | 2018-05-09 | 2018-05-09 | Semiconductor structure and chip |
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| Publication Number | Publication Date |
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| CN108511420A CN108511420A (en) | 2018-09-07 |
| CN108511420B true CN108511420B (en) | 2024-05-14 |
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| CN201810437298.0A Active CN108511420B (en) | 2018-05-09 | 2018-05-09 | Semiconductor structure and chip |
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| CN114068754B (en) * | 2021-12-29 | 2024-05-14 | 上海集成电路研发中心有限公司 | Double-sided avalanche photodiode and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001102524A (en) * | 1999-09-30 | 2001-04-13 | Tokin Corp | Integrated semiconductor device |
| CN102376773A (en) * | 2010-08-04 | 2012-03-14 | 株式会社电装 | Semiconductor device having lateral diode |
| CN102832211A (en) * | 2011-06-14 | 2012-12-19 | 台湾积体电路制造股份有限公司 | High voltage resistor with PIN diode isolation |
| CN104167435A (en) * | 2014-08-08 | 2014-11-26 | 无锡市晶源微电子有限公司 | On-chip high-voltage resistor with voltage dividing ring structure |
| CN208400845U (en) * | 2018-05-09 | 2019-01-18 | 厦门元顺微电子技术有限公司 | Semiconductor structure and chip |
-
2018
- 2018-05-09 CN CN201810437298.0A patent/CN108511420B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001102524A (en) * | 1999-09-30 | 2001-04-13 | Tokin Corp | Integrated semiconductor device |
| CN102376773A (en) * | 2010-08-04 | 2012-03-14 | 株式会社电装 | Semiconductor device having lateral diode |
| CN102832211A (en) * | 2011-06-14 | 2012-12-19 | 台湾积体电路制造股份有限公司 | High voltage resistor with PIN diode isolation |
| CN104167435A (en) * | 2014-08-08 | 2014-11-26 | 无锡市晶源微电子有限公司 | On-chip high-voltage resistor with voltage dividing ring structure |
| CN208400845U (en) * | 2018-05-09 | 2019-01-18 | 厦门元顺微电子技术有限公司 | Semiconductor structure and chip |
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| CN108511420A (en) | 2018-09-07 |
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