CN108598078B - ESD protection circuit and electronic device - Google Patents
ESD protection circuit and electronic device Download PDFInfo
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- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
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Abstract
本发明公开了一种ESD保护电路及电子装置，在供电电源的供电端至接地端之间具有正向静电时，正向静电的电流经由第一正向低压二极管和高压二极管流向接地端；及在供电电源的供电端至接地端之间具有负向静电时，负向静电的电流经由高压二极管流和第二反向低压二极管流向供电端；由于双向导通模块的寄生电容小于高压二极管形成的寄生电容，及双向导通模块的寄生电容与高压二极管形成的寄生电容为串联关系，因此ESD保护电路总的寄生电容较小，以提高ESD保护电路的带宽；同时由于耐高压的高压二极管存在，使得ESD保护电路的耐高压性能优异。
The present invention discloses an ESD protection circuit and an electronic device. When there is positive static electricity between the power supply end and the grounding end of a power supply, the current of the positive static electricity flows to the grounding end via a first positive low-voltage diode and a high-voltage diode; and when there is negative static electricity between the power supply end and the grounding end of the power supply, the current of the negative static electricity flows to the power supply end via the high-voltage diode and the second reverse low-voltage diode; since the parasitic capacitance of a bidirectional conductive module is smaller than the parasitic capacitance formed by the high-voltage diode, and the parasitic capacitance of the bidirectional conductive module and the parasitic capacitance formed by the high-voltage diode are in series, the total parasitic capacitance of the ESD protection circuit is small, so as to improve the bandwidth of the ESD protection circuit; at the same time, due to the existence of a high-voltage diode that can withstand high voltage, the high-voltage resistance performance of the ESD protection circuit is excellent.
Description
技术领域Technical Field
本发明涉及静电防护技术领域，更为具体的说，涉及一种ESD保护电路及电子装置。The present invention relates to the technical field of electrostatic protection, and more specifically, to an ESD protection circuit and an electronic device.
背景技术Background technique
ESD(Electro-Static discharge，静电放电)电路是半导体集成电路中极为重要的部分。其主要负责保护芯片内部的器件不受ESD的损伤。随着应用场景的逐步复杂以及人们对ESD性能要求也不断提高，例如在需要进行高压短路保护的高压、高速模拟开关应用场景下，以带有过压保护的USB(Universal Serial Bus，通用串行总线)开关为例，其一方面允许外部端口直接短路到高压，例如20V，另一方面，其传输USB高速数据要求整个引脚上的寄生电容小于4pF。而现有一些高压ESD保护电路的方案，其被保护端口到电源的接地端之间存在着较大的寄生电容，这会影响到高速端口的信号完整性，无法满足高速信号传输的应用场景。The ESD (Electro-Static discharge) circuit is an extremely important part of semiconductor integrated circuits. It is mainly responsible for protecting the devices inside the chip from damage by ESD. With the gradual complexity of application scenarios and the continuous improvement of people's requirements for ESD performance, for example, in the application scenario of high-voltage and high-speed analog switches that require high-voltage short-circuit protection, take the USB (Universal Serial Bus) switch with overvoltage protection as an example. On the one hand, it allows the external port to be directly short-circuited to high voltage, such as 20V, and on the other hand, its transmission of USB high-speed data requires the parasitic capacitance on the entire pin to be less than 4pF. However, in some existing high-voltage ESD protection circuit solutions, there is a large parasitic capacitance between the protected port and the ground terminal of the power supply, which will affect the signal integrity of the high-speed port and cannot meet the application scenario of high-speed signal transmission.
发明内容Summary of the invention
有鉴于此，本发明提供了一种ESD保护电路及电子装置，由于双向导通模块的寄生电容小于高压二极管形成的寄生电容，及双向导通模块的寄生电容与高压二极管形成的寄生电容为串联关系，因此ESD保护电路总的寄生电容较小，以提高ESD保护电路的带宽；同时由于耐高压的高压二极管存在，使得ESD保护电路的耐高压性能优异。In view of this, the present invention provides an ESD protection circuit and an electronic device. Since the parasitic capacitance of the bidirectional conductive module is smaller than the parasitic capacitance formed by the high-voltage diode, and the parasitic capacitance of the bidirectional conductive module and the parasitic capacitance formed by the high-voltage diode are in series, the total parasitic capacitance of the ESD protection circuit is small, so as to improve the bandwidth of the ESD protection circuit; at the same time, due to the presence of the high-voltage diode that can withstand high voltage, the ESD protection circuit has excellent high-voltage resistance performance.
为实现上述目的，本发明提供的技术方案如下：To achieve the above purpose, the technical solution provided by the present invention is as follows:
一种ESD保护电路，连接于供电电源与被保护电路之间，所述ESD保护电路包括：An ESD protection circuit is connected between a power supply and a protected circuit, and the ESD protection circuit comprises:
高压二极管和双向导通模块，所述双向导通模块包括第一正向低压二极管和第一反向低压二极管；A high-voltage diode and a bidirectional conduction module, wherein the bidirectional conduction module includes a first forward low-voltage diode and a first reverse low-voltage diode;
所述第一正向低压二极管的阳极与所述第一反向低压二极管的阴极均连接至所述供电电源的供电端，所述第一正向低压二极管的阴极与所述第一反向低压二极管的阳极均连接至所述高压二极管的阴极，所述高压二极管的阳极连接至所述供电电源的接地端；The anode of the first forward low-voltage diode and the cathode of the first reverse low-voltage diode are both connected to the power supply end of the power supply, the cathode of the first forward low-voltage diode and the anode of the first reverse low-voltage diode are both connected to the cathode of the high-voltage diode, and the anode of the high-voltage diode is connected to the ground end of the power supply;
其中，所述第一正向低压二极管和所述第一反向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压，且所述双向导通模块的寄生电容小于所述高压二极管形成的寄生电容。The reverse breakdown voltages of the first forward low-voltage diode and the first reverse low-voltage diode are both smaller than the reverse breakdown voltage of the high-voltage diode, and the parasitic capacitance of the bidirectional conduction module is smaller than the parasitic capacitance formed by the high-voltage diode.
可选的，所述第一正向低压二极管和所述第一反向低压二极管的相连结构包括：Optionally, the connection structure of the first forward low-voltage diode and the first reverse low-voltage diode includes:
衬底；substrate;
位于所述衬底上的N型埋层；An N-type buried layer located on the substrate;
位于所述N型埋层上的第一P型注入层和第二P型注入层；A first P-type injection layer and a second P-type injection layer located on the N-type buried layer;
位于所述第一P型注入层上的第一N阱和位于所述第二P型注入层上的第二N阱；a first N-well located on the first P-type injection layer and a second N-well located on the second P-type injection layer;
以及，位于所述第一N阱上的第一P+注入层和位于所述第二N阱上的第二P+注入层；and, a first P+ injection layer located on the first N-well and a second P+ injection layer located on the second N-well;
其中，所述第一P+注入层与所述第二N阱相连且连接至所述供电端，所述第一N阱、所述第一P型注入层、所述第二P+注入层、所述第二P型注入层与所述N型埋层相连且连接至所述高压二极管的阴极。Among them, the first P+ injection layer is connected to the second N well and connected to the power supply end, and the first N well, the first P type injection layer, the second P+ injection layer, and the second P type injection layer are connected to the N type buried layer and connected to the cathode of the high voltage diode.
可选的，所述第一正向低压二极管和所述第一反向低压二极管相同。Optionally, the first forward low-voltage diode and the first reverse low-voltage diode are the same.
可选的，所述双向导通模块还包括：Optionally, the bidirectional conduction module further includes:
第二正向低压二极管至第N正向低压二极管，N为不小于2的整数，所述第二正向低压二极管至所述第N正向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second forward low voltage diode to the Nth forward low voltage diode, N is an integer not less than 2, and the reverse breakdown voltages of the second forward low voltage diode to the Nth forward low voltage diode are all less than the reverse breakdown voltage of the high voltage diode;
所述第二正向低压二极管至所述第N正向低压二极管中每一正向低压二极管，均与所述第一正向低压二极管同向串联于所述供电端和所述高压二极管的阴极之间。Each of the second forward low-voltage diode to the Nth forward low-voltage diode is connected in series with the first forward low-voltage diode in the same direction as between the power supply end and the cathode of the high-voltage diode.
可选的，所述双向导通模块还包括：Optionally, the bidirectional conduction module further includes:
第二正向低压二极管至第N正向低压二极管，N为不小于2的整数，所述第二正向低压二极管至所述第N正向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second forward low voltage diode to the Nth forward low voltage diode, N is an integer not less than 2, and the reverse breakdown voltages of the second forward low voltage diode to the Nth forward low voltage diode are all less than the reverse breakdown voltage of the high voltage diode;
所述第二正向低压二极管至所述第N正向低压二极管中每一正向低压二极管，均与所述第一正向低压二极管同向并联于所述供电端和所述高压二极管的阴极之间。Each of the second forward low-voltage diode to the Nth forward low-voltage diode is connected in parallel with the first forward low-voltage diode in the same direction as that between the power supply end and the cathode of the high-voltage diode.
可选的，所述第二正向低压二极管至所述第N正向低压二极管中每一正向低压二极管，均与所述第一正向低压二极管相同。Optionally, each forward low-voltage diode from the second forward low-voltage diode to the Nth forward low-voltage diode is the same as the first forward low-voltage diode.
可选的，所述双向导通模块还包括：Optionally, the bidirectional conduction module further includes:
第二反向低压二极管至第M反向低压二极管，M为不小于2的整数，所述第二反向低压二极管至所述第M反向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second reverse low-voltage diode to the Mth reverse low-voltage diode, M is an integer not less than 2, and the reverse breakdown voltages of the second reverse low-voltage diode to the Mth reverse low-voltage diode are all less than the reverse breakdown voltage of the high-voltage diode;
所述第二反向低压二极管至所述第M反向低压二极管中每一反向低压二极管，均所述第一反向低压二极管同向串联于所述供电端和所述高压二极管的阴极之间。Each of the reverse low-voltage diodes from the second reverse low-voltage diode to the Mth reverse low-voltage diode is connected in series in the same direction as the first reverse low-voltage diode between the power supply end and the cathode of the high-voltage diode.
可选的，所述双向导通模块还包括：Optionally, the bidirectional conduction module further includes:
第二反向低压二极管至第M反向低压二极管，M为不小于2的整数，所述第二反向低压二极管至所述第M反向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second reverse low-voltage diode to the Mth reverse low-voltage diode, M is an integer not less than 2, and the reverse breakdown voltages of the second reverse low-voltage diode to the Mth reverse low-voltage diode are all less than the reverse breakdown voltage of the high-voltage diode;
所述第二反向低压二极管至所述第N反向低压二极管中每一反向低压二极管，均与所述第一反向低压二极管同向并联于所述供电端和所述高压二极管的阴极之间。Each of the second reverse low-voltage diode to the Nth reverse low-voltage diode is connected in parallel with the first reverse low-voltage diode in the same direction as the first reverse low-voltage diode between the power supply end and the cathode of the high-voltage diode.
可选的，所述第二反向低压二极管至所述第M反向低压二极管中每一反向低压二极管，均与所述第一反向低压二极管相同。Optionally, each reverse low-voltage diode from the second reverse low-voltage diode to the Mth reverse low-voltage diode is the same as the first reverse low-voltage diode.
相应的，本发明还提供了一种电子装置，所述电子装置包括上述的ESD保护电路。Correspondingly, the present invention further provides an electronic device, which includes the above-mentioned ESD protection circuit.
相较于现有技术，本发明提供的技术方案至少具有以下优点：Compared with the prior art, the technical solution provided by the present invention has at least the following advantages:
本发明提供了一种ESD保护电路及电子装置，连接于供电电源与被保护电路之间，所述ESD保护电路包括：高压二极管和双向导通模块，所述双向导通模块包括第一正向低压二极管和第一反向低压二极管；所述第一正向低压二极管的阳极与所述第一反向低压二极管的阴极均连接至所述供电电源的供电端，所述第一正向低压二极管的阴极与所述第一反向低压二极管的阳极均连接至所述高压二极管的阴极，所述高压二极管的阳极连接至所述供电电源的接地端；其中，所述第一正向低压二极管和所述第一反向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压，且所述双向导通模块的寄生电容小于所述高压二极管形成的寄生电容。The present invention provides an ESD protection circuit and an electronic device, which are connected between a power supply and a protected circuit. The ESD protection circuit includes: a high-voltage diode and a bidirectional conduction module, and the bidirectional conduction module includes a first forward low-voltage diode and a first reverse low-voltage diode; the anode of the first forward low-voltage diode and the cathode of the first reverse low-voltage diode are both connected to the power supply end of the power supply, the cathode of the first forward low-voltage diode and the anode of the first reverse low-voltage diode are both connected to the cathode of the high-voltage diode, and the anode of the high-voltage diode is connected to the ground end of the power supply; wherein the reverse breakdown voltages of the first forward low-voltage diode and the first reverse low-voltage diode are both less than the reverse breakdown voltage of the high-voltage diode, and the parasitic capacitance of the bidirectional conduction module is less than the parasitic capacitance formed by the high-voltage diode.
由上述内容可知，本发明提供的技术方案，在供电电源的供电端至接地端之间具有正向静电时，正向静电的电流经由第一正向低压二极管和高压二极管流向接地端；及在供电电源的供电端至接地端之间具有负向静电时，负向静电的电流经由高压二极管流和第二反向低压二极管流向供电端；由于双向导通模块的寄生电容小于高压二极管形成的寄生电容，及双向导通模块的寄生电容与高压二极管形成的寄生电容为串联关系，因此ESD保护电路总的寄生电容较小，以提高ESD保护电路的带宽；同时由于耐高压的高压二极管存在，使得ESD保护电路的耐高压性能优异。From the above content, it can be seen that the technical solution provided by the present invention is that when there is positive static electricity between the power supply end and the grounding end of the power supply, the current of the positive static electricity flows to the grounding end via the first forward low-voltage diode and the high-voltage diode; and when there is negative static electricity between the power supply end and the grounding end of the power supply, the current of the negative static electricity flows to the power supply end via the high-voltage diode and the second reverse low-voltage diode; since the parasitic capacitance of the bidirectional conduction module is smaller than the parasitic capacitance formed by the high-voltage diode, and the parasitic capacitance of the bidirectional conduction module and the parasitic capacitance formed by the high-voltage diode are in series, the total parasitic capacitance of the ESD protection circuit is small, so as to improve the bandwidth of the ESD protection circuit; at the same time, due to the presence of the high-voltage diode that can withstand high voltage, the high-voltage resistance performance of the ESD protection circuit is excellent.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据提供的附图获得其他的附图。In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the provided drawings without paying creative work.
图1为本申请实施例提供的一种ESD保护电路的结构示意图；FIG1 is a schematic diagram of the structure of an ESD protection circuit provided in an embodiment of the present application;
图2为本申请实施例提供的一种第一正向低压二极管和第一反向低压二极管的连接结构示意图；FIG2 is a schematic diagram of a connection structure of a first forward low-voltage diode and a first reverse low-voltage diode provided in an embodiment of the present application;
图3为本申请实施例提供的另一种ESD保护电路的结构示意图。FIG. 3 is a schematic diagram of the structure of another ESD protection circuit provided in an embodiment of the present application.
具体实施方式Detailed ways
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
正如背景技术所述，随着应用场景的逐步复杂以及人们对ESD性能要求也不断提高，例如在需要进行高压短路保护的高压、高速模拟开关应用场景下，以带有过压保护的USB开关为例，其一方面允许外部端口直接短路到高压，例如20V，另一方面，其传输USB高速数据要求整个引脚上的寄生电容小于4pF。而现有一些高压ESD保护电路的方案，其被保护端口到电源的接地端之间存在着较大的寄生电容，这会影响到高速端口的信号完整性，无法满足高速信号传输的应用场景。As described in the background technology, with the gradual complexity of application scenarios and people's requirements for ESD performance, for example, in the application scenario of high-voltage and high-speed analog switches that require high-voltage short-circuit protection, taking a USB switch with overvoltage protection as an example, on the one hand, it allows the external port to be directly short-circuited to high voltage, such as 20V, and on the other hand, its transmission of USB high-speed data requires the parasitic capacitance on the entire pin to be less than 4pF. However, in some existing high-voltage ESD protection circuit solutions, there is a large parasitic capacitance between the protected port and the ground terminal of the power supply, which will affect the signal integrity of the high-speed port and cannot meet the application scenario of high-speed signal transmission.
基于此，本申请实施例提供了一种ESD保护电路及电子装置，由于双向导通模块的寄生电容小于高压二极管形成的寄生电容，及双向导通模块的寄生电容与高压二极管形成的寄生电容为串联关系，因此ESD保护电路总的寄生电容较小，以提高ESD保护电路的带宽；同时由于耐高压的高压二极管存在，使得ESD保护电路的耐高压性能优异。为实现上述目的，本申请实施例提供的技术方案如下，具体结合图1至图3对本申请实施例提供的技术方案进行详细说明。Based on this, the embodiment of the present application provides an ESD protection circuit and an electronic device. Since the parasitic capacitance of the bidirectional conduction module is smaller than the parasitic capacitance formed by the high-voltage diode, and the parasitic capacitance of the bidirectional conduction module and the parasitic capacitance formed by the high-voltage diode are in series, the total parasitic capacitance of the ESD protection circuit is small, so as to improve the bandwidth of the ESD protection circuit; at the same time, due to the presence of the high-voltage diode that withstands high voltage, the high-voltage resistance performance of the ESD protection circuit is excellent. To achieve the above purpose, the technical solution provided by the embodiment of the present application is as follows, and the technical solution provided by the embodiment of the present application is described in detail in conjunction with Figures 1 to 3.
参考图1所示，为本申请实施例提供的一种ESD保护电路的结构示意图，连接于供电电源与被保护电路300之间，所述ESD保护电路包括：Referring to FIG. 1 , a schematic diagram of the structure of an ESD protection circuit provided in an embodiment of the present application is shown, which is connected between a power supply and a protected circuit 300. The ESD protection circuit includes:
高压二极管210和双向导通模块220，所述双向导通模块220包括第一正向低压二极管2211和第一反向低压二极管2221；A high-voltage diode 210 and a bidirectional conduction module 220, wherein the bidirectional conduction module 220 includes a first forward low-voltage diode 2211 and a first reverse low-voltage diode 2221;
所述第一正向低压二极管2211的阳极与所述第一反向低压二极管2221的阴极均连接至所述供电电源的供电端Pin，所述第一正向低压二极管2211的阴极与所述第一反向低压二极管2221的阳极均连接至所述高压二极管210的阴极，所述高压二极管210的阳极连接至所述供电电源的接地端Gnd；The anode of the first forward low-voltage diode 2211 and the cathode of the first reverse low-voltage diode 2221 are both connected to the power supply terminal Pin of the power supply, the cathode of the first forward low-voltage diode 2211 and the anode of the first reverse low-voltage diode 2221 are both connected to the cathode of the high-voltage diode 210, and the anode of the high-voltage diode 210 is connected to the ground terminal Gnd of the power supply;
其中，所述第一正向低压二极管2211和所述第一反向低压二极管2221的反向击穿电压均小于所述高压二极管210的反向击穿电压，且所述双向导通模块220的寄生电容C2小于所述高压二极管210形成的寄生电容C1。The reverse breakdown voltages of the first forward low-voltage diode 2211 and the first reverse low-voltage diode 2221 are both smaller than the reverse breakdown voltage of the high-voltage diode 210 , and the parasitic capacitance C2 of the bidirectional conductive module 220 is smaller than the parasitic capacitance C1 formed by the high-voltage diode 210 .
在本申请一实施例中，本申请提供的所述第一正向低压二极管和所述第一反向低压二极管相同，即本申请实施例提供的第一正向低压二极管和第一反向低压二极管的反向击穿电压、导通压降、寄生电容等参数可以相同。此外，在本申请其他实施例中，第一正向低压二极管和第一反向低压二极管还可以不相同，对此本申请不做具体限制。In one embodiment of the present application, the first forward low-voltage diode and the first reverse low-voltage diode provided in the present application are the same, that is, the first forward low-voltage diode and the first reverse low-voltage diode provided in the embodiment of the present application may have the same parameters such as reverse breakdown voltage, conduction voltage drop, and parasitic capacitance. In addition, in other embodiments of the present application, the first forward low-voltage diode and the first reverse low-voltage diode may also be different, and the present application does not make specific restrictions on this.
由上述内容可知，本申请实施例提供的技术方案，在供电电源的供电端至接地端之间具有正向静电时，正向静电的电流经由第一正向低压二极管和高压二极管流向接地端；及在供电电源的供电端至接地端之间具有负向静电时，负向静电的电流经由高压二极管流和第二反向低压二极管流向供电端；由于双向导通模块的寄生电容小于高压二极管形成的寄生电容，及双向导通模块的寄生电容与高压二极管形成的寄生电容为串联关系，因此ESD保护电路总的寄生电容较小，以提高ESD保护电路的带宽；同时由于耐高压的高压二极管存在，使得ESD保护电路的耐高压性能优异。From the above content, it can be seen that the technical solution provided by the embodiment of the present application is that when there is positive static electricity between the power supply end and the ground end of the power supply, the current of the positive static electricity flows to the ground end via the first forward low-voltage diode and the high-voltage diode; and when there is negative static electricity between the power supply end and the ground end of the power supply, the current of the negative static electricity flows to the power supply end via the high-voltage diode and the second reverse low-voltage diode; since the parasitic capacitance of the bidirectional conduction module is smaller than the parasitic capacitance formed by the high-voltage diode, and the parasitic capacitance of the bidirectional conduction module and the parasitic capacitance formed by the high-voltage diode are in series, the total parasitic capacitance of the ESD protection circuit is small, so as to improve the bandwidth of the ESD protection circuit; at the same time, due to the presence of the high-voltage diode that can withstand high voltage, the high-voltage resistance performance of the ESD protection circuit is excellent.
结合图1所示，双向导通模块220的寄生电容C2与高压二极管210形成的寄生电容C1为串联的关系，故而，ESD保护电路的总寄生电容C为：As shown in FIG. 1 , the parasitic capacitance C2 of the bidirectional conductive module 220 and the parasitic capacitance C1 formed by the high voltage diode 210 are connected in series. Therefore, the total parasitic capacitance C of the ESD protection circuit is:
C＝C1*C2/(C1+C2)C＝C1*C2/(C1+C2)
对双向导通模块220和高压二极管210进行优化，以优化寄生电容C2和寄生电容C1的值，进而得到ESD保护电路的总寄生电容C能够近似为双向导通模块220的寄生电容C2，因此ESD保护电路总的寄生电容较小，以提高ESD保护电路的带宽。The bidirectional conductive module 220 and the high-voltage diode 210 are optimized to optimize the values of the parasitic capacitance C2 and the parasitic capacitance C1, so that the total parasitic capacitance C of the ESD protection circuit can be approximated to the parasitic capacitance C2 of the bidirectional conductive module 220. Therefore, the total parasitic capacitance of the ESD protection circuit is small, so as to improve the bandwidth of the ESD protection circuit.
参考图2所示，为本申请实施例提供的一种第一正向低压二极管和第一反向低压二极管的连接结构示意图，其中，本申请实施例提供的所述第一正向低压二极管和所述第一反向低压二极管的相连结构包括：Referring to FIG. 2 , a schematic diagram of a connection structure of a first forward low-voltage diode and a first reverse low-voltage diode provided in an embodiment of the present application is shown, wherein the connection structure of the first forward low-voltage diode and the first reverse low-voltage diode provided in an embodiment of the present application includes:
衬底10；Substrate 10;
位于所述衬底10上的N型埋层20；An N-type buried layer 20 located on the substrate 10;
位于所述N型埋层20上的第一P型注入层31和第二P型注入层32；A first P-type injection layer 31 and a second P-type injection layer 32 located on the N-type buried layer 20;
位于所述第一P型注入层31上的第一N阱41和位于所述第二P型注入层32上的第二N阱42；a first N-well 41 located on the first P-type injection layer 31 and a second N-well 42 located on the second P-type injection layer 32;
以及，位于所述第一N阱41上的第一P+注入层51和位于所述第二N阱42上的第二P+注入层52；and, a first P+ injection layer 51 located on the first N well 41 and a second P+ injection layer 52 located on the second N well 42;
其中，所述第一P+注入层51与所述第二N阱42相连且连接至所述供电端Pin，所述第一N阱41、所述第一P型注入层31、所述第二P+注入层52、所述第二P型注入层32与所述N型埋层20相连且连接至所述高压二极管210的阴极。Among them, the first P+ injection layer 51 is connected to the second N well 42 and connected to the power supply terminal Pin, and the first N well 41, the first P type injection layer 31, the second P+ injection layer 52, and the second P type injection layer 32 are connected to the N type buried layer 20 and connected to the cathode of the high voltage diode 210.
其中，由于第一正向低压二极管第一反向低压二极管连接，供电电源的供电端对接地端传输正向电，由于低压二极管的负极此时为高压，那么其不能直接位于P型衬底上，需要添加一层P型注入再加一层N型埋层(N型埋层本质上为一个注入较深的N阱)。添加的P型注入层的电位和第一正向低压二极管的负极之间的电压不能太高，此处将其接在第一正向低压二极管的负极，因此注入的P型注入层就是高电平，而注入的P型注入层和N型埋层形成正向低压二极管，使得N型埋层也是高压(也就是NBL和衬底之间组成的二极管的反向击穿电压比D_HV反向击穿高得多，例如本申请实施例中N型埋层到衬底之间的二极管的反向击穿电压大约为45V，而高压二极管的反向击穿大约25V)。Among them, since the first forward low-voltage diode is connected to the first reverse low-voltage diode, the power supply end of the power supply transmits forward electricity to the ground end. Since the cathode of the low-voltage diode is high voltage at this time, it cannot be directly located on the P-type substrate, and it is necessary to add a layer of P-type injection and then a layer of N-type buried layer (the N-type buried layer is essentially an N-well with a deeper injection). The voltage between the potential of the added P-type injection layer and the cathode of the first forward low-voltage diode cannot be too high. Here, it is connected to the cathode of the first forward low-voltage diode, so the injected P-type injection layer is a high level, and the injected P-type injection layer and the N-type buried layer form a forward low-voltage diode, so that the N-type buried layer is also high voltage (that is, the reverse breakdown voltage of the diode formed between the NBL and the substrate is much higher than the D_HV reverse breakdown. For example, in the embodiment of the present application, the reverse breakdown voltage of the diode between the N-type buried layer and the substrate is about 45V, while the reverse breakdown of the high-voltage diode is about 25V).
本申请实施例提供的双向导通模块还可以包括更多的低压二极管以适应不同应用场景。在本申请一实施例中，本申请提供双向导通模块还可以包括更多的正向低压二极管，其中，所述双向导通模块还可以包括：The bidirectional conduction module provided in the embodiment of the present application may further include more low-voltage diodes to adapt to different application scenarios. In one embodiment of the present application, the bidirectional conduction module provided in the present application may further include more forward low-voltage diodes, wherein the bidirectional conduction module may further include:
第二正向低压二极管至第N正向低压二极管，N为不小于2的整数，所述第二正向低压二极管至所述第N正向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second forward low voltage diode to the Nth forward low voltage diode, N is an integer not less than 2, and the reverse breakdown voltages of the second forward low voltage diode to the Nth forward low voltage diode are all less than the reverse breakdown voltage of the high voltage diode;
所述第二正向低压二极管至所述第N正向低压二极管中每一正向低压二极管，均与所述第一正向低压二极管同向串联于所述供电端和所述高压二极管的阴极之间。Each of the second forward low-voltage diode to the Nth forward low-voltage diode is connected in series with the first forward low-voltage diode in the same direction as between the power supply end and the cathode of the high-voltage diode.
或者，本申请实施例提供的所述双向导通模块还包括：Alternatively, the bidirectional conductive module provided in the embodiment of the present application further includes:
第二正向低压二极管至第N正向低压二极管，N为不小于2的整数，所述第二正向低压二极管至所述第N正向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second forward low voltage diode to the Nth forward low voltage diode, N is an integer not less than 2, and the reverse breakdown voltages of the second forward low voltage diode to the Nth forward low voltage diode are all less than the reverse breakdown voltage of the high voltage diode;
所述第二正向低压二极管至所述第N正向低压二极管中每一正向低压二极管，均与所述第一正向低压二极管同向并联于所述供电端和所述高压二极管的阴极之间。Each of the second forward low-voltage diode to the Nth forward low-voltage diode is connected in parallel with the first forward low-voltage diode in the same direction as that between the power supply end and the cathode of the high-voltage diode.
此外，本申请实施例提供的双向导通模块在包括第二正向低压二极管至第N正向低压二极管时，其部分正向低压二极管可以同向串联后与第一正向低压二极管同向串联，而另一部分则可以同向串联后与第一正向低压二极管同向并联，其中，本申请实施例所述的同向即为二极管的阳极和阴极连接方向相同。In addition, when the bidirectional conducting module provided in the embodiment of the present application includes the second forward low-voltage diode to the Nth forward low-voltage diode, some of its forward low-voltage diodes can be connected in series in the same direction and then connected in series in the same direction with the first forward low-voltage diode, while the other part can be connected in series in the same direction and then connected in parallel in the same direction with the first forward low-voltage diode, wherein the same direction described in the embodiment of the present application means that the anode and cathode connection directions of the diodes are the same.
优选的，本申请实施例提供的所述第二正向低压二极管至所述第N正向低压二极管中每一正向低压二极管，均与所述第一正向低压二极管相同，对此便于对双向导通模块进行设计。在本申请其他实施例中第二正向低压二极管至第N正向低压二极管中每一正向低压二极管，还可以与第一正向低压二极管不同，对此本申请不做具体限制。Preferably, each of the second forward low-voltage diode to the Nth forward low-voltage diode provided in the embodiment of the present application is the same as the first forward low-voltage diode, which facilitates the design of the bidirectional conduction module. In other embodiments of the present application, each of the second forward low-voltage diode to the Nth forward low-voltage diode may also be different from the first forward low-voltage diode, and the present application does not make specific restrictions on this.
在本申请一实施例中，本申请实施例提供的所述双向导通模块还包括：In an embodiment of the present application, the bidirectional conductive module provided in the embodiment of the present application further includes:
第二反向低压二极管至第M反向低压二极管，M为不小于2的整数，所述第二反向低压二极管至所述第M反向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second reverse low-voltage diode to the Mth reverse low-voltage diode, M is an integer not less than 2, and the reverse breakdown voltages of the second reverse low-voltage diode to the Mth reverse low-voltage diode are all less than the reverse breakdown voltage of the high-voltage diode;
所述第二反向低压二极管至所述第M反向低压二极管中每一反向低压二极管，均所述第一反向低压二极管同向串联于所述供电端和所述高压二极管的阴极之间。Each of the reverse low-voltage diodes from the second reverse low-voltage diode to the Mth reverse low-voltage diode is connected in series in the same direction as the first reverse low-voltage diode between the power supply end and the cathode of the high-voltage diode.
或者，本申请实施例提供的所述双向导通模块还可以包括：Alternatively, the bidirectional conductive module provided in the embodiment of the present application may further include:
第二反向低压二极管至第M反向低压二极管，M为不小于2的整数，所述第二反向低压二极管至所述第M反向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压；The second reverse low-voltage diode to the Mth reverse low-voltage diode, M is an integer not less than 2, and the reverse breakdown voltages of the second reverse low-voltage diode to the Mth reverse low-voltage diode are all less than the reverse breakdown voltage of the high-voltage diode;
所述第二反向低压二极管至所述第N反向低压二极管中每一反向低压二极管，均与所述第一反向低压二极管同向并联于所述供电端和所述高压二极管的阴极之间。Each of the second reverse low-voltage diode to the Nth reverse low-voltage diode is connected in parallel with the first reverse low-voltage diode in the same direction as the first reverse low-voltage diode between the power supply end and the cathode of the high-voltage diode.
此外，本申请实施例提供的双向导通模块在包括第二反向低压二极管至第N正向反压二极管时，其部分反向低压二极管可以同向串联后与第一反向低压二极管同向串联，而另一部分则可以同向串联后与第一反向低压二极管同向并联。In addition, when the bidirectional conducting module provided in the embodiment of the present application includes a second reverse low-voltage diode to an Nth forward reverse voltage diode, some of its reverse low-voltage diodes can be connected in series in the same direction with the first reverse low-voltage diode, while another part can be connected in series in the same direction with the first reverse low-voltage diode in the same direction.
优选的，本申请实施例提供的所述第二反向低压二极管至所述第M反向低压二极管中每一反向低压二极管，均与所述第一反向低压二极管相同，对此便于对双向导通模块进行设计。在本申请其他实施例中第二反向低压二极管至第M反向低压二极管中每一反向低压二极管，还可以与第一反向低压二极管不同，对此本申请不做具体限制。Preferably, each of the second reverse low-voltage diode to the Mth reverse low-voltage diode provided in the embodiment of the present application is the same as the first reverse low-voltage diode, which facilitates the design of the bidirectional conduction module. In other embodiments of the present application, each of the second reverse low-voltage diode to the Mth reverse low-voltage diode may also be different from the first reverse low-voltage diode, and the present application does not make specific restrictions on this.
下面结合附图对本申请实施例提供的双向导通模块具有更多低压二极管时的结构进行描述。参考图3所示，为本申请实施例提供的另一种ESD保护电路的结构示意图，其中，双向导通模块220包括第二正向低压二极管2212至第N正向低压二极管221n，及包括第二反向低压二极管2222至第M反向低压二极管222m，其中，第二正向低压二极管2212至第N正向低压二极管221n中所有正向低压二极管均同向串联后，与第一正向低压二极管2211同向串联，以及，第二反向低压二极管2222至第M反向低压二极管222m中所有反向低压二极管均同向串联后，与第一反向低压二极管2221同向串联。The structure of the bidirectional conduction module provided in the embodiment of the present application when there are more low-voltage diodes is described below in conjunction with the accompanying drawings. Referring to FIG3, a schematic diagram of the structure of another ESD protection circuit provided in the embodiment of the present application, wherein the bidirectional conduction module 220 includes a second forward low-voltage diode 2212 to an Nth forward low-voltage diode 221n, and includes a second reverse low-voltage diode 2222 to an Mth reverse low-voltage diode 222m, wherein all the forward low-voltage diodes in the second forward low-voltage diode 2212 to the Nth forward low-voltage diode 221n are connected in series in the same direction, and then connected in series in the same direction with the first forward low-voltage diode 2211, and all the reverse low-voltage diodes in the second reverse low-voltage diode 2222 to the Mth reverse low-voltage diode 222m are connected in series in the same direction, and then connected in series in the same direction with the first reverse low-voltage diode 2221.
在本申请一实施例中，本申请提供的所有正向低压二极管均相同，及所有反向低压二极管均相同，且正向低压二极管和反向低压二极管均相同。此外，本申请实施例提供的N和M可以相同。In one embodiment of the present application, all forward low-voltage diodes provided in the present application are the same, and all reverse low-voltage diodes are the same, and the forward low-voltage diodes and the reverse low-voltage diodes are the same. In addition, N and M provided in the embodiment of the present application can be the same.
在本申请一实施例中，本申请提供的ESD保护电路还可以包括更多的高压二极管，所有高压二极管中任意两个可以相同或不同，且所有高压二极管的均同向连接与双向导通模块与接地端之间。其中，本申请实施例对于多个高压二极管的串联和并联连接关系不做具体限制。In an embodiment of the present application, the ESD protection circuit provided by the present application may further include more high-voltage diodes, any two of which may be the same or different, and all high-voltage diodes are connected in the same direction between the bidirectional conduction module and the ground terminal. The embodiment of the present application does not specifically limit the series and parallel connection relationship of the multiple high-voltage diodes.
相应的，本申请实施例还提供了一种电子装置，所述电子装置包括上述任意一实施例提供的ESD保护电路。Correspondingly, an embodiment of the present application further provides an electronic device, which includes the ESD protection circuit provided by any one of the above embodiments.
本申请实施例提供了一种ESD保护电路及电子装置，连接于供电电源与被保护电路之间，所述ESD保护电路包括：高压二极管和双向导通模块，所述双向导通模块包括第一正向低压二极管和第一反向低压二极管；所述第一正向低压二极管的阳极与所述第一反向低压二极管的阴极均连接至所述供电电源的供电端，所述第一正向低压二极管的阴极与所述第一反向低压二极管的阳极均连接至所述高压二极管的阴极，所述高压二极管的阳极连接至所述供电电源的接地端；其中，所述第一正向低压二极管和所述第一反向低压二极管的反向击穿电压均小于所述高压二极管的反向击穿电压，且所述双向导通模块的寄生电容小于所述高压二极管形成的寄生电容。An embodiment of the present application provides an ESD protection circuit and an electronic device, which are connected between a power supply and a protected circuit. The ESD protection circuit includes: a high-voltage diode and a bidirectional conduction module, and the bidirectional conduction module includes a first forward low-voltage diode and a first reverse low-voltage diode; the anode of the first forward low-voltage diode and the cathode of the first reverse low-voltage diode are both connected to the power supply end of the power supply, the cathode of the first forward low-voltage diode and the anode of the first reverse low-voltage diode are both connected to the cathode of the high-voltage diode, and the anode of the high-voltage diode is connected to the ground end of the power supply; wherein the reverse breakdown voltages of the first forward low-voltage diode and the first reverse low-voltage diode are both less than the reverse breakdown voltage of the high-voltage diode, and the parasitic capacitance of the bidirectional conduction module is less than the parasitic capacitance formed by the high-voltage diode.
由上述内容可知，本申请实施例提供的技术方案，在供电电源的供电端至接地端之间具有正向静电时，正向静电的电流经由第一正向低压二极管和高压二极管流向接地端；及在供电电源的供电端至接地端之间具有负向静电时，负向静电的电流经由高压二极管流和第二反向低压二极管流向供电端；由于双向导通模块的寄生电容小于高压二极管形成的寄生电容，及双向导通模块的寄生电容与高压二极管形成的寄生电容为串联关系，因此ESD保护电路总的寄生电容较小，以提高ESD保护电路的带宽；同时由于耐高压的高压二极管存在，使得ESD保护电路的耐高压性能优异。From the above content, it can be seen that the technical solution provided by the embodiment of the present application is that when there is positive static electricity between the power supply end and the ground end of the power supply, the current of the positive static electricity flows to the ground end via the first forward low-voltage diode and the high-voltage diode; and when there is negative static electricity between the power supply end and the ground end of the power supply, the current of the negative static electricity flows to the power supply end via the high-voltage diode and the second reverse low-voltage diode; since the parasitic capacitance of the bidirectional conduction module is smaller than the parasitic capacitance formed by the high-voltage diode, and the parasitic capacitance of the bidirectional conduction module and the parasitic capacitance formed by the high-voltage diode are in series, the total parasitic capacitance of the ESD protection circuit is small, so as to improve the bandwidth of the ESD protection circuit; at the same time, due to the presence of the high-voltage diode that can withstand high voltage, the high-voltage resistance performance of the ESD protection circuit is excellent.
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments enables one skilled in the art to implement or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.
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