CN108646793B - Device and method for controlling three-dimensional shape of two-dimensional material - Google Patents

Abstract

The invention relates to a device and method for controlling the three-dimensional shape of two-dimensional materials, belonging to the field of two-dimensional material synthesis; it solves the technical problem that the topography and structure are difficult to control in the current three-dimensional process of two-dimensional materials; the technical scheme is as follows: a two-dimensional material A three-dimensional topography control device for three-dimensional materials, including an electromagnetic shield, a cavity, a current source, a PID controller, a bias voltage base, a voltage source, a magnetometer and three pairs of magnetic coils. Three pairs of magnetic coils are arranged around the magnetic coil, the magnetic field lines in the center of the two magnetic coils in each pair of magnetic coils run through the cavity, the electromagnetic shield covers the three pairs of magnetic coils, the voltage source is connected to the bias voltage base, and the magnetic field meter is connected to the PID controller. The PID controller is connected with the current source, and the current source is connected with each pair of magnetic coils; the invention is suitable for synthesizing three-dimensional two-dimensional materials with customized morphology, studying the growth mechanism of two-dimensional materials and developing new two-dimensional materials.

Description

A device and method for three-dimensional shape control of two-dimensional materials

technical field

The invention relates to a device and a method for controlling the three-dimensional shape of a two-dimensional material, belonging to the field of two-dimensional material synthesis.

Background technique

The three-dimensionalization of two-dimensional materials not only maintains the inherent excellent properties of two-dimensional materials, but also obtains the advantages of enhanced mechanical properties, increased electrical conductivity, and increased effective specific surface area brought by the three-dimensional structure. Synthesizing 2D materials into 3D macrostructures is one of the best ways to fully exploit the properties of 2D materials and put them into practical applications. The three-dimensional structure of two-dimensional materials plays a crucial role in the application effect. For practical applications, the artificially precise and controllable morphology is particularly important for improving the application effect of materials. At present, the three-dimensional shape control method of two-dimensional materials is single and the control force is low. The material morphology can only be fine-tuned by changing the conventional synthesis conditions such as temperature and time during the synthesis process, resulting in poor controllability of the morphology. Therefore, a new device and method are needed to make the three-dimensional morphology of two-dimensional materials artificially controllable, optimize the morphology and structure of three-dimensional two-dimensional materials, and improve the application performance of three-dimensional two-dimensional materials.

SUMMARY OF THE INVENTION

The present invention provides a device and method for controlling the three-dimensional topography of two-dimensional materials in order to solve the problem that the three-dimensional topography of two-dimensional materials is difficult to control at present.

In order to solve the above technical problems, the technical solution adopted in the present invention is: a three-dimensional shape control device for two-dimensional materials, including an electromagnetic shield, a cavity, a current source, a PID controller, a bias voltage base, a voltage source, and a magnetic field meter. And three pairs of magnetic coils, the bias voltage base is set in the cavity, three pairs of magnetic coils are set around the cavity, the magnetic lines of force in the centers of the two magnetic coils in each pair of magnetic coils run through the cavity, and the electromagnetic shield covers the three pairs of magnetic coils. The coil, the voltage source is connected with the bias voltage base, the magnetic field meter is connected with the PID controller, the PID controller is connected with the current source, and the current source is connected with each pair of magnetic coils.

Further, the material used for the electromagnetic shielding cover is permalloy.

Further, the cavity is a quartz tube, and two sides of the electromagnetic shielding cover are provided with circular holes having the same shape as the section of the quartz tube for passing through the quartz tube.

Further, the PID controller includes a first PID controller, a second PID controller and a third PID controller, and the magnetic coil includes a first magnetic coil pair, a second magnetic coil pair and a third magnetic coil pair, so The current source includes a first current source, a second current source, and a third current source, and the respective two magnetic coils in the first magnetic coil pair, the second magnetic coil pair, and the third magnetic coil pair are arranged opposite each other, and are respectively located in the The first PID controller controls the first current source to adjust the magnetic field strength of the first magnetic coil pair according to the real-time reading of the magnetic field meter, and the second PID controller controls the second current according to the real-time reading of the magnetic field meter. The source regulates the magnetic field strength of the second magnetic coil pair, and the third PID controller controls the third current source to regulate the magnetic field strength of the third magnetic coil pair according to the real-time reading of the magnetic field meter.

Further, the bias voltage base and the magnetometer are disposed in the overlapping portion where the first magnetic coil pair, the second magnetic coil pair and the third magnetic coil pair generate magnetic fields.

A method for controlling the three-dimensional shape of a two-dimensional material is completed based on the above-mentioned device for controlling the three-dimensional shape of a two-dimensional material, and includes the following steps:

The target growth substrate is placed on the bias voltage substrate, the chamber is evacuated, and after the heating chamber reaches the predetermined reaction temperature, the ionized reactants are introduced, the current source is turned on to control the magnetic field, the voltage source is turned on to control the bias voltage field, and the process starts. The growth process of the target growth material; after the reaction is completed, the temperature of the cavity is lowered to room temperature, air is introduced, and the target substrate after the target growth material is taken out for use.

Further, the reaction temperature is 200-1700°C.

Further, during the reaction, at least one pair of magnetic coils or voltage sources participates in the work.

Compared with the prior art, the present invention has the following advantages:

1. Through real-time adjustment of the direction, size, intensity and other parameters of the three-dimensional magnetic field and the substrate bias voltage field, the direct and precise control of the active particle movement trajectory in the ionized reactant is realized. The reaction position and direction of active particles in the process of synthesizing two-dimensional materials can be precisely controlled, and finally the purpose of controlling the three-dimensional morphology and structure of two-dimensional materials is achieved.

2. The device and method of the present invention are suitable for the three-dimensional growth of various two-dimensional materials such as graphene, molybdenum disulfide, and tungsten disulfide.

Description of drawings

FIG. 1 is a schematic diagram of an external structure of an embodiment of the present invention.

FIG. 2 is a schematic diagram of an internal structure of an embodiment of the present invention.

FIG. 3 is a schematic structural diagram of the interior of the cavity in the embodiment of the present invention.

4 is a schematic diagram of an embodiment of three-dimensionalization of two-dimensional graphene in the method of the present invention.

In the figure, 1-electromagnetic shield, 2-cavity, 3-first current source, 4-first PID controller, 5-second PID controller, 6-second current source, 7-third PID control device, 8-third current source, 9-first magnetic coil pair, 10-second magnetic coil pair, 11-third magnetic coil pair, 12-bias voltage base, 13-voltage source.

Detailed ways

The present invention will be further described below in conjunction with the accompanying drawings.

Example

As shown in FIG. 1 to FIG. 3 , a three-dimensional topography control device for two-dimensional materials includes an electromagnetic shield 1, a cavity 2, a bias voltage substrate 12, a voltage source 13, a magnetometer, a first PID controller 4, Second PID controller 5, third PID controller 7, first magnetic coil pair 9, second magnetic coil pair 10, third magnetic coil pair 11, first current source 3, second current source 6 and third current Source 8. The electromagnetic shield 1 covers three pairs of magnetic coils, the voltage source 13 is connected to the bias voltage base 12, and the magnetic field meter is connected to all PID controllers. The material used for the electromagnetic shielding cover 1 is permalloy. The cavity 2 is a quartz tube, and two sides of the electromagnetic shielding cover 1 are provided with circular holes having the same shape as the section of the quartz tube for passing through the quartz tube. The bias voltage base 12 is arranged in the cavity 2 , and the bias voltage base 12 and the magnetometer are arranged in the overlapping portion where the first magnetic coil pair 9 , the second magnetic coil pair 10 and the third magnetic coil pair 11 generate magnetic fields.

The respective two magnetic coils in the first magnetic coil pair 9 , the second magnetic coil pair 10 and the third magnetic coil pair 11 are arranged opposite to each other, and are located in the front, back, up and down and left and right of the cavity 2 respectively. The first PID controller 4 according to the magnetic field The real-time reading of the meter controls the first current source 3 to adjust the magnetic field strength of the first magnetic coil pair 9, the second PID controller 5 controls the second current source 6 to adjust the magnetic field strength of the second magnetic coil pair 10 according to the real-time reading of the magnetic field meter, The third PID controller 7 controls the third current source 8 to adjust the magnetic field strength of the third magnetic coil pair 11 according to the real-time reading of the magnetic field meter.

The working process of the present invention is as follows: the material growth target substrate is sent into the cavity 2, and placed on the bias voltage substrate 12, the equipment is turned on to heat, and the ionized reactant is introduced; when the experimental conditions reach the growth temperature, then According to the experimental design, the magnetic field and electric field near the substrate are controlled by the magnetic field and electric field to control the active particles in the reactant after ionization, and finally the material with the target morphology is obtained.

In the specific implementation, using the experimental parameters in Table 1, two-dimensional graphene is synthesized into a special vertical three-dimensional structure, which is divided into the following steps:

a. Take quartz as the target substrate, and place it on the bias voltage substrate 12 after cleaning;

b. The cavity temperature is heated to 850 ℃;

b. Introduce ionized acetylene and hydrogen;

e. Set the current of the horizontal magnetic field to 15 mA, the current of the vertical magnetic field to 20 mA, and the substrate bias voltage to 10 V, and then synthesize the material for 30 min.

f. Using the horizontal magnetic field, the vertical magnetic field and the substrate bias voltage to control the motion behavior of active particles in the reactants after ionization, so that the two-dimensional graphene can be three-dimensionalized, as shown in Figure 4.

Table 1 Experimental parameters

Although the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that form and detail may be made therein without departing from the spirit and scope of the invention as defined in the claims various changes on.

Claims (7)

1. A two-dimensional material three-dimensional appearance controlling means which characterized in that: the electromagnetic shielding device comprises an electromagnetic shielding cover (1), a cavity (2), a current source, a PID controller, a bias voltage substrate (12), a voltage source (13), a magnetic field meter and three pairs of magnetic coils, wherein the bias voltage substrate (12) is arranged in the cavity (2), the three pairs of magnetic coils are arranged around the cavity (2), magnetic lines of force of centers of two magnetic coils in each pair of magnetic coils penetrate through the cavity (2), the electromagnetic shielding cover (1) covers the three pairs of magnetic coils, the voltage source (13) is connected with the bias voltage substrate (12), the magnetic field meter is connected with the PID controller, the PID controller is connected with the current source, and the current source is connected with each pair of magnetic coils;

the PID controller comprises a first PID controller (4), a second PID controller (5) and a third PID controller (7), the magnetic coils comprise a first magnetic coil pair (9), a second magnetic coil pair (10) and a third magnetic coil pair (11), the current sources comprise a first current source (3), a second current source (6) and a third current source (8), two respective magnetic coils in the first magnetic coil pair (9), the second magnetic coil pair (10) and the third magnetic coil pair (11) are oppositely arranged and are respectively positioned at the front, back, upper, lower and left and right of the cavity (2), the first PID controller (4) controls the first current source (3) to adjust the magnetic field intensity of the first magnetic coil pair (9) according to the real-time reading of the magnetometer, and the second PID controller (5) controls the second current source (6) to adjust the magnetic field intensity of the second magnetic coil pair (10) according to the real-time reading of the magnetometer, the third PID controller (7) controls the third current source (8) to adjust the magnetic field strength of the third magnetic coil pair (11) according to the real-time reading of the magnetic field meter.

2. The three-dimensional shape control device for the two-dimensional material as recited in claim 1, wherein the electromagnetic shielding case (1) is made of permalloy.

3. The device for controlling the three-dimensional shape of the two-dimensional material according to claim 1, wherein the cavity (2) is a quartz tube, and round holes which are in the same shape as the cross section of the quartz tube and are used for the quartz tube to penetrate through are arranged on two sides of the electromagnetic shielding cover (1).

4. The apparatus for controlling the three-dimensional profile of a two-dimensional material according to claim 1, wherein said bias substrate (12) and said magnetometer are disposed in the overlapping portion of the magnetic fields generated by said first pair of magnetic coils (9), said second pair of magnetic coils (10), and said third pair of magnetic coils (11).

5. A method for controlling the three-dimensional shape of a two-dimensional material is characterized by comprising the following steps: the device for controlling the three-dimensional shape of the two-dimensional material is completed based on any one of claims 1 to 4 and comprises the following steps:

placing a target growth substrate on a bias voltage substrate (12), vacuumizing the cavity (2), heating the cavity (2) to reach a preset reaction temperature, introducing ionized reactants, starting a current source to control a magnetic field, starting a voltage source to control a bias voltage field, and starting a growth process of a target growth material; and after the reaction is finished, reducing the temperature of the cavity to room temperature, introducing air, and taking out the target substrate of the target growth material for later use.

6. The method for controlling the three-dimensional shape of the two-dimensional material according to claim 5, wherein: the reaction temperature is 200-1700 ℃.

7. The method for controlling the three-dimensional shape of the two-dimensional material according to claim 5, wherein: during the reaction, at least one pair of magnetic coils or voltage sources is involved.

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