CN108963038A - A kind of manufacturing method of deep ultraviolet LED chip - Google Patents
A kind of manufacturing method of deep ultraviolet LED chip Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 38
- 238000000206 photolithography Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000004544 sputter deposition Methods 0.000 claims abstract description 13
- 238000001259 photo etching Methods 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 238000004140 cleaning Methods 0.000 claims description 15
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 6
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- 230000000694 effects Effects 0.000 description 3
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- 238000000137 annealing Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
- H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
- H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
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Abstract
本发明提供一种深紫外LED芯片的制造方法，包括步骤：S1、对所述深紫外LED芯片的外延片进行光刻后蚀刻出第一指定图形，形成基片；S2、在所述基片上进行光刻出第二指定图形的AlGaN层，并将所述第二指定图形外的所述AlGaN层全部刻蚀至Al2O3层；S3、在所述AlGaN层上蒸镀形状为第三指定图形的P面导电层；S4、在所述P面导电层上蒸镀状为第四指定图形的N面导电层；S5、在所述基片上覆设生长绝缘层，并去除多余的所述绝缘层；S6、在所述基片上光刻出金属电极图形，按照所述金属电极图形蒸镀或溅射PN电极金属，形成所述深紫外LED芯片。采用Ni/Au导电层代替传统芯片中的ITO层，同时保证了P/N型AlGaN与金属之间的欧姆接触，提高了芯片的发光效率。
The invention provides a method for manufacturing a deep-ultraviolet LED chip, comprising the steps of: S1, performing photolithography on the epitaxial wafer of the deep-ultraviolet LED chip, and then etching out a first specified pattern to form a substrate; S2, on the substrate Perform photolithography to form the AlGaN layer of the second designated pattern, and etch the AlGaN layer outside the second designated pattern to the Al 2 O 3 layer; S3, vapor-deposit the shape on the AlGaN layer into a third The P-side conductive layer of the specified pattern; S4, vapor-depositing the N-side conductive layer of the fourth specified pattern on the P-side conductive layer; S5, covering the growth insulating layer on the substrate, and removing the redundant all The insulating layer; S6. Photoetching a metal electrode pattern on the substrate, and vapor-depositing or sputtering PN electrode metal according to the metal electrode pattern to form the deep ultraviolet LED chip. The Ni/Au conductive layer is used to replace the ITO layer in the traditional chip, and at the same time, the ohmic contact between the P/N type AlGaN and the metal is guaranteed, and the luminous efficiency of the chip is improved.
Description
技术领域technical field
本发明涉及LED芯片制造技术领域，特别是涉及一深紫外LED芯片的制造方法。The invention relates to the technical field of LED chip manufacturing, in particular to a method for manufacturing a deep ultraviolet LED chip.
背景技术Background technique
深紫外LED芯片是发光波长在200-350nm范围内的LED芯片，进入蓝光时代后的又一项重大突破。The deep ultraviolet LED chip is an LED chip with a light emitting wavelength in the range of 200-350nm, which is another major breakthrough after entering the era of blue light.
深紫外光被广泛应用于净水、杀菌消毒、甲醛处理、生化检测等领域，而过去该波段光源主要由汞灯提供，而LED灯在环保、节能、轻便等方面均远远优于传统汞灯，具有极大的市场和全新的应用场景。近年来国外已有少量深紫外LED芯片出售，其售价是普通蓝光LED芯片的1000倍以上，国内该领域仍处于研发阶段，尚无产品出售。Deep ultraviolet light is widely used in water purification, sterilization, formaldehyde treatment, biochemical detection and other fields. In the past, the light source in this band was mainly provided by mercury lamps, and LED lamps are far superior to traditional mercury lamps in terms of environmental protection, energy saving, and portability. Lamps have a huge market and new application scenarios. In recent years, a small number of deep ultraviolet LED chips have been sold abroad, and their price is more than 1,000 times that of ordinary blue LED chips. In China, this field is still in the research and development stage, and there is no product for sale.
深紫外LED外延生长时在P/N-GaN中均掺杂了高组分的Al，而N型AlGaN与金属之间很难形成良好的欧姆接触，导致芯片阻抗升高，发热量大，发光效率低；800℃以上的高温退火虽然可以改善芯片N型接触电阻，但其会破坏传统芯片中的ITO层，从而增加芯片阻抗。During the epitaxial growth of deep ultraviolet LEDs, high-composition Al is doped in P/N-GaN, but it is difficult to form a good ohmic contact between N-type AlGaN and the metal, resulting in increased chip impedance, large heat generation, and luminescence. Low efficiency; although high-temperature annealing above 800°C can improve chip N-type contact resistance, it will destroy the ITO layer in traditional chips, thereby increasing chip impedance.
发明内容Contents of the invention
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种深紫外LED芯片的制造方法，用于解决现有技术中阻抗升高，发热量大，发光效率低；高温退火虽然可以改善芯片N型接触电阻，但其会破坏传统芯片中的ITO层，从而增加芯片阻抗的问题。In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for manufacturing a deep ultraviolet LED chip, which is used to solve the problem of increased impedance, large calorific value, and low luminous efficiency in the prior art; although high-temperature annealing can improve Chip N-type contact resistance, but it will destroy the ITO layer in the traditional chip, thereby increasing the problem of chip impedance.
本发明提供一种深紫外LED芯片的制造方法，包括步骤：S1、对所述深紫外LED芯片的外延片进行光刻后蚀刻出第一指定图形，形成基片；S2、在所述基片上进行光刻出第二指定图形的AlGaN层，并将所述第二指定图形外的所述AlGaN层全部刻蚀至Al2O3层；S3、在所述AlGaN层上蒸镀形状为第三指定图形的P面导电层；S4、在所述P面导电层上蒸镀状为第四指定图形的N面导电层；S5、在所述基片上覆设生长绝缘层，并去除多余的所述绝缘层；S6、在所述基片上光刻出金属电极图形，按照所述金属电极图形蒸镀或溅射PN电极金属，形成所述深紫外LED芯片。The invention provides a method for manufacturing a deep-ultraviolet LED chip, comprising the steps of: S1, performing photolithography on the epitaxial wafer of the deep-ultraviolet LED chip, and then etching out a first specified pattern to form a substrate; S2, on the substrate Perform photolithography to form the AlGaN layer of the second designated pattern, and etch the AlGaN layer outside the second designated pattern to the Al 2 O 3 layer; S3, vapor-deposit the shape on the AlGaN layer into a third The P-side conductive layer of the specified pattern; S4, vapor-depositing the N-side conductive layer of the fourth specified pattern on the P-side conductive layer; S5, covering the growth insulating layer on the substrate, and removing the redundant all The insulating layer; S6. Photoetching a metal electrode pattern on the substrate, and vapor-depositing or sputtering PN electrode metal according to the metal electrode pattern to form the deep ultraviolet LED chip.
于本发明的一实施例中，所述AlGaN层包括N-AlGaN层和P-AlGaN层；所述步骤S1包括步骤：S11、将所述外延片清洗干净并进行MESA光刻；S12、使用ICP按照所述第一指定图形将所述外延片刻蚀至所述N-AlGaN层；S13、去除光刻胶，并清洗干净。In an embodiment of the present invention, the AlGaN layer includes an N-AlGaN layer and a P-AlGaN layer; the step S1 includes steps: S11, cleaning the epitaxial wafer and performing MESA photolithography; S12, using ICP Etching the epitaxial wafer to the N-AlGaN layer according to the first specified pattern; S13, removing the photoresist and cleaning it.
于本发明的一实施例中，所述ICP刻蚀的深度为0.5μm-1.5μm。In an embodiment of the present invention, the depth of the ICP etching is 0.5 μm-1.5 μm.
于本发明的一实施例中，所述步骤S3包括步骤：S31、在所述AlGaN层上进行P极金属负胶光刻；S32、蒸镀或溅射Ni/Au金属电极；S33、剥离多余金属、去除光刻胶，并清洗干净。In an embodiment of the present invention, the step S3 includes the steps: S31, performing P-electrode metal negative resist photolithography on the AlGaN layer; S32, evaporating or sputtering Ni/Au metal electrodes; S33, peeling off excess metal, remove photoresist, and clean.
于本发明的一实施例中，所述步骤S32中，蒸镀或溅射所述Ni/Au金属电极的厚度分别为20nm±10nm/300nm±100nm。In an embodiment of the present invention, in the step S32, the Ni/Au metal electrodes are deposited or sputtered to a thickness of 20nm±10nm/300nm±100nm, respectively.
于本发明的一实施例中，所述步骤S4包括步骤：S41、在所述AlGaN层上进行N极金属负胶光刻；S42、蒸镀或溅射Ti/Au/Ni/Au金属电极；S43、剥离多余金属、去除光刻胶，并清洗干净。In an embodiment of the present invention, the step S4 includes steps: S41, performing N-electrode metal negative resist photolithography on the AlGaN layer; S42, evaporating or sputtering Ti/Au/Ni/Au metal electrodes; S43 , stripping excess metal, removing photoresist, and cleaning.
于本发明的一实施例中，所述步骤S32中，蒸镀或溅射所述Ti/Au/Ni/Au金属电极的厚度分别为30nm±10nm/100nm±50nm/30nm±10nm/1000nm±400nm。In an embodiment of the present invention, in the step S32, the thicknesses of the Ti/Au/Ni/Au metal electrodes deposited or sputtered are respectively 30nm±10nm/100nm±50nm/30nm±10nm/1000nm±400nm .
于本发明的一实施例中，所述步骤S5包括步骤：S51、在所述基片的表面沉积SiO2作为所述绝缘层；S52、对所述绝缘层进行光刻形成形状为第五指定图形的所述绝缘层；S53、使用湿法腐蚀或干法刻蚀去除所述第五指定图形外的多余SiO2；S54、去除光刻胶，并清洗干净。In an embodiment of the present invention, the step S5 includes the steps: S51, depositing SiO2 on the surface of the substrate as the insulating layer; S52, performing photolithography on the insulating layer to form a fifth specified shape The insulating layer of the pattern; S53, using wet etching or dry etching to remove excess SiO 2 outside the fifth specified pattern; S54, removing the photoresist and cleaning it.
于本发明的一实施例中，所述步骤S6包括步骤：S61、按照第六指定图形在所述基片上光刻出金属电极图形；S62、按照所述金属电极图形蒸镀或溅射Au金属电极；S63、剥离多余金属、去除光刻胶，并清洗干净。In an embodiment of the present invention, the step S6 includes steps: S61, photoetching a metal electrode pattern on the substrate according to the sixth specified pattern; S62, evaporating or sputtering Au metal according to the metal electrode pattern Electrode; S63, stripping excess metal, removing photoresist, and cleaning.
于本发明的一实施例中，所述Au金属电极的厚度为3000nm±1000nm。In an embodiment of the present invention, the thickness of the Au metal electrode is 3000nm±1000nm.
如上所述，本发明的一种深紫外LED芯片的制造方法，具有以下有益效果：As mentioned above, a method for manufacturing a deep ultraviolet LED chip of the present invention has the following beneficial effects:
采用Ni/Au导电层代替传统芯片中的ITO层，同时保证了P/N型AlGaN与金属之间的欧姆接触，提高了芯片的发光效率。The Ni/Au conductive layer is used to replace the ITO layer in the traditional chip, and at the same time, the ohmic contact between the P/N type AlGaN and the metal is guaranteed, and the luminous efficiency of the chip is improved.
附图说明Description of drawings
图1显示为本发明中深紫外LED芯片上光刻第一指定图形后的结构示意图。FIG. 1 is a schematic structural view of the deep ultraviolet LED chip after photolithography of the first specified pattern in the present invention.
图2显示为本发明中深紫外LED芯片上光刻第二指定图形后的结构示意图。Fig. 2 is a schematic structural diagram after photoetching a second specified pattern on the deep ultraviolet LED chip of the present invention.
图3显示为本发明中深紫外LED芯片上光刻第三指定图形后的结构示意图。Fig. 3 is a schematic structural diagram after photoetching a third specified pattern on the deep ultraviolet LED chip of the present invention.
图4显示为本发明中深紫外LED芯片上光刻第四指定图形后的结构示意图。FIG. 4 is a schematic structural view of the fourth specified pattern after photolithography on the deep ultraviolet LED chip of the present invention.
图5显示为本发明中深紫外LED芯片上光刻第五指定图形后的结构示意图。FIG. 5 is a schematic structural view of the fifth designated pattern after photolithography on the deep ultraviolet LED chip of the present invention.
图6显示为本发明中深紫外LED芯片上光刻第六指定图形后的结构示意图。FIG. 6 is a schematic structural view of the sixth specified pattern after photolithography on the deep ultraviolet LED chip of the present invention.
元件标号说明：Component label description:
a 第一指定图形a The first designated figure
b 第二指定图形b second specified graphic
c 第三指定图形c third designation figure
d 第四指定图形d The fourth designated figure
e 第五指定图形e Fifth designated figure
f 第六指定图形f Sixth designated figure
1 AlGaN层1 AlGaN layer
2 Al2O3层2 Al 2 O 3 layers
3 P极金属3 P pole metal
4 N极金属4 N pole metal
5 绝缘层5 insulating layers
6 PN电极金属6 PN electrode metal
11 P-AlGaN层11 P-AlGaN layer
12 N-AlGaN层12 N-AlGaN layers
具体实施方式Detailed ways
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。需说明的是，在不冲突的情况下，以下实施例及实施例中的特征可以相互组合。Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, in the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.
需要说明的是，以下实施例中所提供的图示仅以示意方式说明本发明的基本构想，遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的型态、数量及比例可为一种随意的改变，且其组件布局型态也可能更为复杂。It should be noted that the diagrams provided in the following embodiments are only schematically illustrating the basic ideas of the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arbitrarily during actual implementation, and the component layout type may also be more complicated.
参见图1至图6，须知，本说明书所附图式所绘示的结构、比例、大小等，均仅用以配合说明书所揭示的内容，以供熟悉此技术的人士了解与阅读，并非用以限定本发明可实施的限定条件，故不具技术上的实质意义，任何结构的修饰、比例关系的改变或大小的调整，在不影响本发明所能产生的功效及所能达成的目的下，均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时，本说明书中所引用的如“上”、“下”、“左”、“右”、“中间”及“一”等的用语，亦仅为便于叙述的明了，而非用以限定本发明可实施的范围，其相对关系的改变或调整，在无实质变更技术内容下，当亦视为本发明可实施的范畴。Referring to Figures 1 to 6, it should be noted that the structures, proportions, sizes, etc. shown in the drawings attached to this manual are only used to match the content disclosed in the manual, for those who are familiar with this technology to understand and read, not for To limit the conditions that the present invention can implement, it has no technical significance. Any modification of structure, change of proportional relationship or adjustment of size will not affect the effect and purpose of the present invention. All should still fall within the scope covered by the technical content disclosed in the present invention. At the same time, terms such as "upper", "lower", "left", "right", "middle" and "one" quoted in this specification are only for the convenience of description and are not used to limit this specification. The practicable scope of the invention and the change or adjustment of its relative relationship shall also be regarded as the practicable scope of the present invention without any substantial change in the technical content.
如图1至图6所示，图1显示为本发明中深紫外LED芯片上光刻第一指定图形后的结构示意图。图2显示为本发明中深紫外LED芯片上光刻第二指定图形后的结构示意图。图3显示为本发明中深紫外LED芯片上光刻第三指定图形后的结构示意图。图4显示为本发明中深紫外LED芯片上光刻第四指定图形后的结构示意图。图5显示为本发明中深紫外LED芯片上光刻第五指定图形后的结构示意图。图6显示为本发明中深紫外LED芯片上光刻第六指定图形后的结构示意图。本发明提供了一种深紫外LED芯片的制造方法，包括步骤：As shown in FIG. 1 to FIG. 6 , FIG. 1 shows a schematic structural view of the deep ultraviolet LED chip after photolithography of the first specified pattern in the present invention. Fig. 2 is a schematic structural diagram after photoetching a second specified pattern on the deep ultraviolet LED chip of the present invention. Fig. 3 is a schematic structural diagram after photoetching a third specified pattern on the deep ultraviolet LED chip of the present invention. FIG. 4 is a schematic structural view of the fourth specified pattern after photolithography on the deep ultraviolet LED chip of the present invention. FIG. 5 is a schematic structural view of the fifth designated pattern after photolithography on the deep ultraviolet LED chip of the present invention. FIG. 6 is a schematic structural view of the sixth specified pattern after photolithography on the deep ultraviolet LED chip of the present invention. The invention provides a method for manufacturing a deep ultraviolet LED chip, comprising the steps of:
S1、对深紫外LED芯片的外延片进行光刻后蚀刻出第一指定图形a，形成基片；在本发明的一实施例中，AlGaN层1包括N-AlGaN层12和P-AlGaN层11；步骤S1包括步骤：S11、将外延片清洗干净并进行MESA光刻；S12、使用ICP按照第一指定图形a将外延片刻蚀至N-AlGaN层12；S13、去除光刻胶，并清洗干净。S1. After performing photolithography on the epitaxial wafer of the deep ultraviolet LED chip, etch out the first specified pattern a to form the substrate; in an embodiment of the present invention, the AlGaN layer 1 includes an N-AlGaN layer 12 and a P-AlGaN layer 11 ;Step S1 includes steps: S11, cleaning the epitaxial wafer and performing MESA photolithography; S12, using ICP to etch the epitaxial wafer to the N-AlGaN layer 12 according to the first specified pattern a; S13, removing the photoresist, and cleaning it up .
S2、在基片上进行光刻出第二指定图形b的AlGaN层1，并将第二指定图形b外的AlGaN层1全部刻蚀至Al2O3层2；通过ICP刻蚀，充分隔绝芯片，便于后续生长绝缘层5时能够保护N-AlGaN层12的侧壁，防止P极金属3扩散产生漏电。进一步地，ICP刻蚀的深度为0.5μm-1.5μm。S2. Perform photolithography on the substrate to form the AlGaN layer 1 of the second specified pattern b, and etch all the AlGaN layer 1 outside the second specified pattern b to the Al 2 O 3 layer 2; fully isolate the chip by ICP etching , it is convenient to protect the sidewall of the N—AlGaN layer 12 when the insulating layer 5 is grown subsequently, and prevent the leakage of the P-electrode metal 3 from diffusion. Further, the depth of ICP etching is 0.5 μm-1.5 μm.
S3、在AlGaN层1上蒸镀形状为第三指定图形c的P面导电层；在本发明的一实施例中，步骤S3包括步骤：S31、在AlGaN层1上进行P极金属3负胶光刻；S32、蒸镀或溅射Ni/Au金属电极；S33、剥离多余金属、去除光刻胶，并清洗干净。进一步地，步骤S32中，蒸镀或溅射Ni/Au金属电极的厚度分别为20nm±10nm/300nm±100nm。S3. On the AlGaN layer 1, vapor-deposit a P-side conductive layer whose shape is the third specified pattern c; in an embodiment of the present invention, step S3 includes the steps: S31. On the AlGaN layer 1, carry out the P-electrode metal 3 negative glue Photolithography; S32, evaporation or sputtering of Ni/Au metal electrodes; S33, stripping excess metal, removing photoresist, and cleaning. Further, in step S32, the thicknesses of the evaporated or sputtered Ni/Au metal electrodes are respectively 20nm±10nm/300nm±100nm.
S4、在P面导电层上蒸镀状为第四指定图形d的N面导电层；在本发明的一实施例中，步骤S4包括步骤：S41、在AlGaN层1上进行N极金属4负胶光刻；S42、蒸镀或溅射Ti/Au/Ni/Au金属电极；S43、剥离多余金属、去除光刻胶，并清洗干净。进一步地，步骤S32中，蒸镀或溅射Ti/Au/Ni/Au金属电极的厚度分别为30nm±10nm/100nm±50nm/30nm±10nm/1000nm±400nm。S4. Evaporate an N-side conductive layer having the fourth specified pattern d on the P-side conductive layer; in an embodiment of the present invention, step S4 includes the steps: S41. Perform N-pole metal 4 negative on the AlGaN layer 1 Resin photolithography; S42, evaporation or sputtering of Ti/Au/Ni/Au metal electrodes; S43, stripping excess metal, removing photoresist, and cleaning. Further, in step S32, the thicknesses of the evaporated or sputtered Ti/Au/Ni/Au metal electrodes are respectively 30nm±10nm/100nm±50nm/30nm±10nm/1000nm±400nm.
S5、在基片上覆设生长绝缘层5，并去除多余的绝缘层5；在本发明的一实施例中，步骤S5包括步骤：S51、在基片的表面沉积SiO2作为绝缘层5；S52、对绝缘层5进行光刻形成形状为第五指定图形e的绝缘层5；S53、使用湿法腐蚀或干法刻蚀去除第五指定图形e外的多余SiO2；S54、去除光刻胶，并清洗干净。S5, covering the growth insulating layer 5 on the substrate, and removing the redundant insulating layer 5; in one embodiment of the present invention, step S5 includes steps: S51, depositing SiO2 on the surface of the substrate as the insulating layer 5; S52 1. Carrying out photolithography to the insulating layer 5 to form the insulating layer 5 whose shape is the fifth specified pattern e; S53, using wet etching or dry etching to remove excess SiO 2 outside the fifth specified pattern e; S54, removing the photoresist , and cleaned.
S6、在基片上光刻出金属电极图形，按照金属电极图形蒸镀或溅射PN电极金属6，形成深紫外LED芯片。在本发明的一优选实施例中，步骤S6包括步骤：S61、按照第六指定图形f在基片上光刻出金属电极图形；S62、按照金属电极图形蒸镀或溅射Au金属电极；S63、剥离多余金属、去除光刻胶，并清洗干净。进一步地，Au金属电极的厚度为3000nm±1000nm。S6. Photoetching a metal electrode pattern on the substrate, and vapor-depositing or sputtering PN electrode metal 6 according to the metal electrode pattern to form a deep ultraviolet LED chip. In a preferred embodiment of the present invention, step S6 includes steps: S61, photoetching metal electrode patterns on the substrate according to the sixth specified pattern f; S62, evaporating or sputtering Au metal electrodes according to the metal electrode patterns; S63, Strip excess metal, remove photoresist, and clean. Further, the thickness of the Au metal electrode is 3000nm±1000nm.
综上所述，本发明的深紫外LED芯片的制造方法，采用Ni/Au导电层代替传统芯片中的ITO层，同时保证了P/N型AlGaN与金属之间的欧姆接触，提高了芯片的发光效率。所以，本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。In summary, the manufacturing method of the deep ultraviolet LED chip of the present invention adopts the Ni/Au conductive layer to replace the ITO layer in the traditional chip, and at the same time ensures the ohmic contact between the P/N type AlGaN and the metal, and improves the reliability of the chip. Luminous efficiency. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial application value.
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379903A (en) * | 2019-07-30 | 2019-10-25 | 华中科技大学鄂州工业技术研究院 | Total space ODR deep ultraviolet high photosynthetic efficiency diode chip for backlight unit and its manufacture craft |
| CN115579442A (en) * | 2022-12-12 | 2023-01-06 | 至芯半导体(杭州)有限公司 | A kind of preparation method of deep ultraviolet LED chip structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1102507A (en) * | 1993-04-28 | 1995-05-10 | 日亚化学工业株式会社 | Gallium nitride-based III-V compound semiconductor device with ohmic electrode and manufacturing method thereof |
| CN1508847A (en) * | 2002-12-20 | 2004-06-30 | 上海北大蓝光科技有限公司 | Method for preparing low-resistance P-type GaN-based material ohmic contact |
| CN104134734A (en) * | 2014-08-01 | 2014-11-05 | 晶科电子（广州）有限公司 | Inverted LED chip with high light emitting efficiency and LED device and manufacturing method of inverted LED chip with high light emitting efficiency |
| CN105679910A (en) * | 2016-01-18 | 2016-06-15 | 华中科技大学 | Deep ultraviolet light emitting diode chip with high luminous efficiency and preparation method thereof |
| CN106653961A (en) * | 2016-12-20 | 2017-05-10 | 合肥彩虹蓝光科技有限公司 | Method of manufacturing micro LED chip with flip structure |
-
2017
- 2017-05-27 CN CN201710388132.XA patent/CN108963038A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1102507A (en) * | 1993-04-28 | 1995-05-10 | 日亚化学工业株式会社 | Gallium nitride-based III-V compound semiconductor device with ohmic electrode and manufacturing method thereof |
| CN1508847A (en) * | 2002-12-20 | 2004-06-30 | 上海北大蓝光科技有限公司 | Method for preparing low-resistance P-type GaN-based material ohmic contact |
| CN104134734A (en) * | 2014-08-01 | 2014-11-05 | 晶科电子（广州）有限公司 | Inverted LED chip with high light emitting efficiency and LED device and manufacturing method of inverted LED chip with high light emitting efficiency |
| CN105679910A (en) * | 2016-01-18 | 2016-06-15 | 华中科技大学 | Deep ultraviolet light emitting diode chip with high luminous efficiency and preparation method thereof |
| CN106653961A (en) * | 2016-12-20 | 2017-05-10 | 合肥彩虹蓝光科技有限公司 | Method of manufacturing micro LED chip with flip structure |
Non-Patent Citations (2)
| Title |
|---|
| 卢继传: "《中国当代思想宝库 7》", 31 October 2004 * |
| 叶志镇: "《半导体薄膜技术与物理》", 30 September 2008 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110379903A (en) * | 2019-07-30 | 2019-10-25 | 华中科技大学鄂州工业技术研究院 | Total space ODR deep ultraviolet high photosynthetic efficiency diode chip for backlight unit and its manufacture craft |
| CN115579442A (en) * | 2022-12-12 | 2023-01-06 | 至芯半导体(杭州)有限公司 | A kind of preparation method of deep ultraviolet LED chip structure |
| CN115579442B (en) * | 2022-12-12 | 2024-01-26 | 至芯半导体(杭州)有限公司 | A method for preparing a deep ultraviolet LED chip structure |
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