CN109164675A - A kind of compound mask and preparation method thereof improving sensitive photoresist pattern - Google Patents
A kind of compound mask and preparation method thereof improving sensitive photoresist pattern Download PDFInfo
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- CN109164675A CN109164675A CN201811204227.2A CN201811204227A CN109164675A CN 109164675 A CN109164675 A CN 109164675A CN 201811204227 A CN201811204227 A CN 201811204227A CN 109164675 A CN109164675 A CN 109164675A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 105
- 150000001875 compounds Chemical class 0.000 title claims abstract description 46
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 229910016006 MoSi Inorganic materials 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 16
- 239000010453 quartz Substances 0.000 claims abstract description 16
- 238000007781 pre-processing Methods 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000002131 composite material Substances 0.000 claims description 53
- 238000010276 construction Methods 0.000 claims description 51
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000012876 topography Methods 0.000 abstract description 7
- 230000018199 S phase Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 5
- 230000000295 complement effect Effects 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000001459 lithography Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 230000010363 phase shift Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013039 cover film Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
The present invention provides a kind of compound mask and preparation method thereof for improving sensitive photoresist pattern, belongs to production and the applied technical field of lithography mask version, comprising: provide a pre-processing structure, pre-processing structure includes quartz layer, MoSi layers, Gr layers；In coating photoresist layer on pre-processing structure, photoresist layer is exposed to form window according to default exposure shape；Gr layers and MoSi layers are performed etching using photoresist layer as exposure mask, to obtain pre-processing compound mask plate；Removal pre-processes the photoresist layer in compound mask plate, to obtain compound mask plate.Beneficial effects of the present invention: by designing compound mask, both the good advantage of bipolar mask version dark space shading had been remained, more precipitous light intensity variation is formed using strength retrogression's phase mask again, have complementary advantages, sensitive photoresist topography issues can successfully be solved by using compound mask plate, more straight photoresist pattern is obtained, photosensitive photoresist pattern is improved.
Description
Technical field
The present invention relates to the production of lithography mask version and applied technical field more particularly to a kind of sensitive photoresist shapes of improvement
Compound mask of looks and preparation method thereof.
Background technique
Conventional bipolar mask (Cr bipolar mask) only uses the intensity of light to be imaged, without the use of its phase.
The part of shading corresponds to non-exposed areas on wafer, the region of the corresponding exposure in the part of light transmission, as shown in Figure 1, being upper on mask
State conventional bipolar mask plate.
The mask of phase shift is then imaged using the intensity and phase of light simultaneously, obtains higher resolution ratio.Strength retrogression
Phase shifting mask be quartz glass surface deposition it is certain thickness MoSi layer, substitution Cr, this MoSi is partial light permeability
, it is assumed that quartz glass is fully transparent (100% transmitance), deposit different-thickness MoSi layer allow it is a certain amount of
The light of (usually 4%~15%) penetrates, and 180 ° of phase shift has occurred through the light of MoSi, at the edge of MoSi
The transmitted light of place, 0 phase and 180 ° of phases is cancelled out each other, and more precipitous light intensity variation is formed, as shown in Fig. 2, being above-mentioned intensity
Decaying phase mask.
When using strength retrogression's phase mask, what is generally selected at present is 6%~7% transmissivity, but passes through theoretical meter
It calculates, the available higher resolution ratio of high-transmission rate, but for the photoresist of some sensitivities, light can also occur for lower transmissivity
Chemical reaction, is exposed so as to cause dark space, generates defect (defect) and causes photoresist thinning, as shown in figure 3, being dark space quilt
Exposure diagram.
Therefore, how not only good using conventional bipolar mask shading performance, but also utilize phase mask (phase-shift
Mask) the advantage of high resolution becomes and needs at present to optimize sensitive photoresist pattern (photoresist profile)
The technical problem of solution.
Summary of the invention
Aiming at the problems existing in the prior art, the present invention relates to a kind of compound masks for improving sensitive photoresist pattern
Version and preparation method thereof.
The present invention adopts the following technical scheme:
A kind of compound mask improving sensitive photoresist pattern, comprising:
Quartz layer；
Multiple composite constructions, each composite construction are respectively arranged on the quartz layer；
The composite construction includes:
MoSi layers, described MoSi layers is set to the upper surface；
Gr layers, described Gr layers is set to MoSi layers of the upper surface.
Preferably, MoSi layers of the width is greater than Gr layers of the width.
A kind of production method for the compound mask plate improving photoresist pattern, comprising:
Step S1, a pre-processing structure is provided, the pre-processing structure includes quartz layer, is set to the upper of the quartz layer
The MoSi layer on surface, the Gr layer for being set to MoSi layers of the upper surface；
Step S2, in coating photoresist layer on the pre-processing structure, the photoresist layer covers described Gr layers of upper table
Face is exposed the photoresist layer according to default exposure shape, in the corresponding default exposure of formation on the photoresist layer
The window of shape；
Step S3, described Gr layers and described MoSi layers are performed etching using the photoresist layer as exposure mask, to obtain pre- place
Manage compound mask plate；
Step S4, the photoresist layer in the compound mask plate of the pretreatment is removed, to obtain described compound cover
Film version.
Preferably, the material of the photoresist layer is electronic pastes；
In the step S2, the photoresist layer is exposed using electron beam.
Preferably, in the step S3, the MoSi layers of width of the compound mask plate of pretreatment is greater than described
Gr layers of width.
Preferably, the step S3 is specifically included:
Step S31, described Gr layers and described MoSi layers are performed etching using the photoresist layer as exposure mask, is located at removal
The Gr layers of the beneath window are with described MoSi layers and exposure is the quartz layer positioned at the beneath window, are located at phase
The Gr layers and described MoSi layers below the photoresist layer between the adjacent window constitute multiple composite constructions；
Step S32, the photoresist layer above each composite construction is performed etching to reduce its width；
Step S33, as exposure mask continue that described Gr layers is continued to etch to reduce the photoresist layer after width, with sudden and violent
Dew part MoSi layers of the upper surface simultaneously forms the compound mask plate of pretreatment.
Preferably, in the step S32, the photoresist layer above each composite construction is performed etching to contract
After subtracting its width, presets the photoresist layer above the composite construction of the first quantity and be located at the corresponding composite construction
Side and the other side of the corresponding composite construction of exposure upper surface；
Default first quantity is equal to the quantity of the composite construction.
Preferably, in the step S32, the photoresist layer above each composite construction is performed etching to contract
After subtracting its width, presets the photoresist layer above the composite construction of the first quantity and be located at the corresponding composite construction
Side and the other side of the corresponding composite construction of exposure upper surface, above the composite construction for presetting the second quantity
The photoresist layer be located at the corresponding composite construction center and the corresponding composite construction of exposure be located at it is described
The upper surface of photoresist layer two sides；
Quantity of the sum of default first quantity and default second quantity equal to the composite construction.
Beneficial effects of the present invention: by designing compound mask, it is good the dark space shading of bipolar mask version had both been remained
Advantage, and form using strength retrogression's phase mask more precipitous light intensity variation, have complementary advantages, covered by using compound
Film version can successfully solve sensitive photoresist topography issues, obtain more straight photoresist pattern, improve photosensitive photoresist shape
Looks.
Detailed description of the invention
Fig. 1 is the schematic diagram of bipolar mask version in the prior art；
Fig. 2 is the schematic diagram of strength retrogression's phase mask in the prior art；
Fig. 3 is in the prior art that dark space is exposed figure；
Fig. 4-10 is to improve the production side of the compound mask plate of photoresist pattern in a kind of preferred embodiment of the present invention
The flow diagram of method；
Figure 11 is to improve the production method of the compound mask plate of photoresist pattern in a kind of preferred embodiment of the present invention
Flow chart；
Figure 12 is the flow chart of step S3 in a kind of preferred embodiment of the present invention；
Figure 13 is the photoresist shape appearance figure of the sensitive photoresist obtained using mask plate in the prior art；
Figure 14 is the photoresist shape appearance figure of the sensitive photoresist obtained using compound mask of the invention.
Specific embodiment
It should be noted that in the absence of conflict, following technical proposals be can be combined with each other between technical characteristic.
A specific embodiment of the invention is further described with reference to the accompanying drawing:
As shown in Figure 10, a kind of compound mask improving sensitive photoresist pattern, comprising:
Quartz layer 1；
Multiple composite constructions, each above-mentioned composite construction are respectively arranged on above-mentioned quartz layer 1；
Above-mentioned composite construction includes:
MoSi layer 2, above-mentioned MoSi layer 2 are set to above-mentioned upper surface；
Gr layer 3, above-mentioned Gr layer 3 are set to the upper surface of above-mentioned MoSi layer 2.
In the present embodiment, by using compound mask, sensitive photoresist topography issues is successfully solved, ideal is obtained
Photoresist pattern.Specifically, the good advantage of bipolar mask version dark space shading had both been remained by designing compound mask,
More precipitous light intensity variation is formed using strength retrogression's phase mask again, is had complementary advantages, by using compound mask plate energy
It is enough successfully to solve sensitive photoresist topography issues, more straight photoresist pattern is obtained, photosensitive photoresist pattern is improved.
In preferred embodiment, the width of above-mentioned MoSi layer 2 is greater than the width of above-mentioned Gr layer 3.
As shown in figs. 10-11, a kind of production method for the compound mask plate improving photoresist pattern, comprising:
Step S1, a pre-processing structure is provided, above-mentioned pre-processing structure includes quartz layer 1, is set to above-mentioned quartz layer 1
The MoSi layer 2 of upper surface, be set to above-mentioned MoSi layer 2 upper surface Gr layer 3；
Step S2, in coating photoresist layer 4 on above-mentioned pre-processing structure, above-mentioned photoresist layer 4 covers above-mentioned Gr layer 3
Upper surface is exposed above-mentioned photoresist layer 4 according to default exposure shape, with corresponding pre- in being formed on above-mentioned photoresist layer 4
If exposing the window of shape；
It step S3, is that exposure mask performs etching above-mentioned Gr layer 3 and above-mentioned MoSi layer 2 with above-mentioned photoresist layer 4, to obtain
Pre-process compound mask plate；
Step S4, the above-mentioned photoresist layer 4 in the above-mentioned compound mask plate of pretreatment is removed, to obtain above-mentioned compound cover
Film version.
In the present embodiment, by using compound mask, sensitive photoresist topography issues is successfully solved, ideal is obtained
Photoresist pattern.Specifically, the good advantage of bipolar mask version dark space shading had both been remained by designing compound mask,
More precipitous light intensity variation is formed using strength retrogression's phase mask again, is had complementary advantages, by using compound mask plate energy
It is enough successfully to solve sensitive photoresist topography issues, more straight photoresist pattern is obtained, photosensitive photoresist pattern is improved.
In preferred embodiment, the material of above-mentioned photoresist layer 4 is electronic pastes；
In above-mentioned steps S2, above-mentioned photoresist layer 4 is exposed using electron beam.
In preferred embodiment, in above-mentioned steps S3, the width of the above-mentioned MoSi layer 2 of the above-mentioned compound mask plate of pretreatment
Greater than the width of above-mentioned Gr layer 3.
As shown in figure 12, in preferred embodiment, above-mentioned steps S3 is specifically included:
It step S31, is that exposure mask performs etching above-mentioned Gr layer 3 and above-mentioned MoSi layer 2 with above-mentioned photoresist layer 4, with removal
Positioned at above-mentioned beneath window above-mentioned Gr layer 3 and above-mentioned MoSi layer 2 and to expose be above-mentioned quartz layer positioned at above-mentioned beneath window
1, the above-mentioned Gr layer 3 and above-mentioned MoSi layer 2 of 4 lower section of above-mentioned photoresist layer between adjacent above-mentioned window constitute multiple compound
Structure；
Step S32, the above-mentioned photoresist layer 4 above each above-mentioned composite construction is performed etching to reduce its width；
It step S33, is that exposure mask continues to continue to etch to above-mentioned Gr layer 3 to reduce the above-mentioned photoresist layer 4 after width, with
The upper surface of the above-mentioned MoSi layer 2 of expose portion simultaneously forms the compound mask plate of above-mentioned pretreatment.
In preferred embodiment, in above-mentioned steps S32, to the above-mentioned photoresist layer 4 above each above-mentioned composite construction into
After row etching is to reduce its width, presets the above-mentioned photoresist layer 4 above the above-mentioned composite construction of the first quantity and be located at accordingly
The side of above-mentioned composite construction and the upper surface of the other side of the corresponding above-mentioned composite construction of exposure；
Above-mentioned default first quantity is equal to the quantity of above-mentioned composite construction.
In preferred embodiment, in above-mentioned steps S32, to the above-mentioned photoresist layer 4 above each above-mentioned composite construction into
After row etching is to reduce its width, presets the above-mentioned photoresist layer 4 above the above-mentioned composite construction of the first quantity and be located at accordingly
The side of above-mentioned composite construction and the upper surface of the other side of the corresponding above-mentioned composite construction of exposure, preset the above-mentioned of the second quantity
Above-mentioned photoresist layer 4 above composite construction is located at the center of corresponding above-mentioned composite construction and the corresponding above-mentioned composite junction of exposure
The upper surface positioned at above-mentioned 4 two sides of photoresist layer of structure；
Quantity of the sum of above-mentioned default first quantity and above-mentioned default second quantity equal to above-mentioned composite construction.
CIS (CMOS Image Sensor, the abbreviation of cmos image sensor) technique platform has
One photoresist, it is very sensitive to light, but because the characteristic of its high-aspect-ratio is difficult to be substituted by other photoresists, in order to improve its white edge compared with
Big problem successfully solves sensitive photoresist topography issues, obtains ideal photoresist shape by publishing new type compound mask
Looks.It as shown in figure 13, is the photoresist shape appearance figure for the sensitive photoresist for using mask plate in the prior art to obtain, as Figure 14 is
Use the photoresist shape appearance figure for the sensitive photoresist that compound mask of the invention obtains.By Figure 13 and Figure 14 it is found that with original
Its white edge of the photoresist for having mask plate to obtain is larger, and the photoresist white edge obtained with compound mask plate of the invention is smaller.
By description and accompanying drawings, the exemplary embodiments of the specific structure of specific embodiment are given, based on present invention essence
Mind can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading above description, various changes and modifications undoubtedly be will be evident.
Therefore, appended claims should regard the whole variations and modifications for covering true intention and range of the invention as.It is weighing
The range and content of any and all equivalences, are all considered as still belonging to the intent and scope of the invention within the scope of sharp claim.
Claims (8)
1. a kind of compound mask for improving sensitive photoresist pattern characterized by comprising
Quartz layer；
Multiple composite constructions, each composite construction are respectively arranged on the quartz layer；
The composite construction includes:
MoSi layers, described MoSi layers is set to the upper surface；
Gr layers, described Gr layers is set to MoSi layers of the upper surface.
2. compound mask according to claim 1, which is characterized in that MoSi layers of the width is greater than described Gr layers
Width.
3. a kind of production method for the compound mask plate for improving photoresist pattern characterized by comprising
Step S1, a pre-processing structure is provided, the pre-processing structure includes quartz layer, the upper surface for being set to the quartz layer
MoSi layer, be set to the Gr layer of MoSi layers of the upper surface；
Step S2, in coating photoresist layer on the pre-processing structure, the photoresist layer covers Gr layers of the upper surface, root
The photoresist layer is exposed according to default exposure shape, in the corresponding default exposure shape of formation on the photoresist layer
Window；
Step S3, described Gr layers and described MoSi layers are performed etching using the photoresist layer as exposure mask, it is multiple to obtain pretreatment
Mould assembly mask plate；
Step S4, the photoresist layer in the compound mask plate of pretreatment is removed, to obtain the compound mask plate.
4. production method according to claim 3, which is characterized in that the material of the photoresist layer is electronic pastes；
In the step S2, the photoresist layer is exposed using electron beam.
5. production method according to claim 3, which is characterized in that in the step S3, the pretreatment is compound to be covered
The MoSi layers of width of film version is greater than Gr layers of the width.
6. production method according to claim 5, which is characterized in that the step S3 is specifically included:
Step S31, described Gr layers and described MoSi layers are performed etching using the photoresist layer as exposure mask, is located at removal described
The Gr layers of beneath window are with described MoSi layers and exposure is the quartz layer positioned at the beneath window, are located at adjacent institute
It states the Gr layers and described MoSi layers below the photoresist layer between window and constitutes multiple composite constructions；
Step S32, the photoresist layer above each composite construction is performed etching to reduce its width；
Step S33, as exposure mask continue that described Gr layers is continued to etch to reduce the photoresist layer after width, with expose portion
MoSi layers of the upper surface simultaneously forms the compound mask plate of pretreatment.
7. production method according to claim 6, which is characterized in that in the step S32, to each composite construction
After the photoresist layer of top is performed etching to reduce its width, preset described above the composite construction of the first quantity
Photoresist layer is located at the upper surface of the side of the corresponding composite construction and the other side of the corresponding composite construction of exposure；
Default first quantity is equal to the quantity of the composite construction.
8. production method according to claim 6, which is characterized in that in the step S32, to each composite construction
After the photoresist layer of top is performed etching to reduce its width, preset described above the composite construction of the first quantity
Photoresist layer is located at the upper surface of the side of the corresponding composite construction and the other side of the corresponding composite construction of exposure,
The photoresist layer above the composite construction of default second quantity is located at the center of the corresponding composite construction and sudden and violent
Reveal the upper surface positioned at the photoresist layer two sides of the corresponding composite construction；
Quantity of the sum of default first quantity and default second quantity equal to the composite construction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811204227.2A CN109164675A (en) | 2018-10-16 | 2018-10-16 | A kind of compound mask and preparation method thereof improving sensitive photoresist pattern |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811204227.2A CN109164675A (en) | 2018-10-16 | 2018-10-16 | A kind of compound mask and preparation method thereof improving sensitive photoresist pattern |
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| CN109164675A true CN109164675A (en) | 2019-01-08 |
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| CN201811204227.2A Pending CN109164675A (en) | 2018-10-16 | 2018-10-16 | A kind of compound mask and preparation method thereof improving sensitive photoresist pattern |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090023078A1 (en) * | 2007-07-20 | 2009-01-22 | Alois Gutmann | Lithography Masks and Methods of Manufacture Thereof |
| CN102822741A (en) * | 2009-12-30 | 2012-12-12 | 英特尔公司 | Phase-shift photomask and patterning method |
| CN102830588A (en) * | 2012-09-19 | 2012-12-19 | 上海华力微电子有限公司 | Method for fabricating phase-shift photomask |
-
2018
- 2018-10-16 CN CN201811204227.2A patent/CN109164675A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090023078A1 (en) * | 2007-07-20 | 2009-01-22 | Alois Gutmann | Lithography Masks and Methods of Manufacture Thereof |
| CN102822741A (en) * | 2009-12-30 | 2012-12-12 | 英特尔公司 | Phase-shift photomask and patterning method |
| CN102830588A (en) * | 2012-09-19 | 2012-12-19 | 上海华力微电子有限公司 | Method for fabricating phase-shift photomask |
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Application publication date: 20190108 |
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