CN109300868B - Insulating heat conduction heat radiation structure based on potsherd - Google Patents
Insulating heat conduction heat radiation structure based on potsherd Download PDFInfo
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- CN109300868B CN109300868B CN201811233406.9A CN201811233406A CN109300868B CN 109300868 B CN109300868 B CN 109300868B CN 201811233406 A CN201811233406 A CN 201811233406A CN 109300868 B CN109300868 B CN 109300868B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4018—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by the type of device to be heated or cooled
- H01L2023/4031—Packaged discrete devices, e.g. to-3 housings, diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4037—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink
- H01L2023/405—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws characterised by thermal path or place of attachment of heatsink heatsink to package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/40—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs
- H01L23/4006—Mountings or securing means for detachable cooling or heating arrangements ; fixed by friction, plugs or springs with bolts or screws
- H01L2023/4075—Mechanical elements
- H01L2023/4087—Mounting accessories, interposers, clamping or screwing parts
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Electrical Apparatus (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The application discloses an insulating heat-conducting heat-dissipating structure based on a ceramic plate, which comprises a radiator (1), wherein an IGBT packaging piece (4) is fixed on the radiator (1), and further comprises an insulating fixing piece (9); a ceramic wafer (2) is arranged between the radiator (1) and the IGBT packaging piece (4); the insulated fixing piece (9) sequentially fixes the IGBT packaging piece (4) and the ceramic piece (2) on the radiator (1). According to the application, the heat conduction and insulation ceramic sheet is added between the IGBT and the radiator, and the special insulation fixing piece is added between the radiator and the IGBT, so that the insulation performance between the IGBT electrode and the radiator is enhanced, and the application requirement of better dielectric strength can be met; the cost of additionally adding the ceramic plate and the insulating fixing piece on the radiator is lower than the cost of directly selecting high-grade dielectric strength, and the method has objective economic benefit.
Description
Technical Field
The invention relates to the technical field of rail transit traction, in particular to an insulating heat-conducting heat-dissipating structure based on ceramic plates.
Background
The application is mainly applied to the power module in the traction and auxiliary products of the rail transit, and a representative application occasion is a charger. The charger belongs to a converter, is a core component of an auxiliary system of an electric locomotive and a subway vehicle, can provide a direct current power supply for a low-voltage direct current load of a train, and can charge the train according to the characteristics of a vehicle-mounted storage battery.
The important device in the charger module is an IGBT, wherein one link can invert direct current into alternating current through the cooperation of a plurality of IGBTs. Larger heat is generated in the working process of the IGBT, the heat is required to be dissipated through a radiator, a general installation structure diagram of the IGBT is shown in fig. 1, and 14 represents a connecting copper bar. For the C pole (collector) and the E pole (emitter) of the IGBT wiring points, the corresponding insulation grade requirements of the radiator are required to be met, for example, the subway project requires that the working voltage of the input end is DC1500V, and the dielectric strength between the C pole and the E pole and the radiator reaches AC5500V. For this case, the IGBT is generally selected to have a specification of 3.3V (maximum voltage that can be borne between the C-stage and E-stage), and the dielectric strength between the electrode and the substrate thereof is higher than AC5500V, which satisfies the application conditions of the product.
The choice of IGBTs of high dielectric strength, while meeting the power parameter requirements, is costly. How to apply the structural transformation of the IGBT with low node strength to meet the working requirement of high dielectric strength is an urgent problem to be solved.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention provides an insulating heat conduction and dissipation structure based on a ceramic plate, which solves the problem that IGBT with low dielectric strength enhances dielectric strength under the condition of low cost. In order to achieve the above purpose, the present invention adopts the following technical scheme:
An insulating heat-conducting heat-dissipating structure based on a ceramic plate comprises a radiator, wherein an IGBT packaging piece is fixed on the radiator, and the insulating heat-conducting heat-dissipating structure further comprises an insulating fixing piece; a ceramic wafer is arranged between the radiator and the IGBT packaging piece; the insulated fixing piece sequentially fixes the IGBT packaging piece and the ceramic chip on the radiator.
Further, the IGBT packaging piece comprises an IGBT substrate arranged at the bottom, the contact surface of the IGBT substrate and the ceramic plate is an arc-shaped surface, and the middle part of the arc-shaped surface protrudes towards the ceramic plate.
Further, the insulating fixing piece comprises a groove formed in the radiator, a metal screw sleeve is arranged in the groove, a structural rubber sleeve is arranged between the metal screw sleeve and the groove, and a screw is connected in the metal screw sleeve; the screw and the metal threaded sleeve are mutually matched to sequentially fix the IGBT packaging piece and the ceramic piece on the radiator;
furthermore, through holes are formed in the ceramic plates, special metal gaskets are arranged in the through holes, and the bolts sequentially penetrate through the IGBT substrate and the special metal gaskets and then are matched with the metal threaded sleeves to be fixed.
Further, the thickness of the specially-made metal gasket is larger than that of the ceramic plate.
Further, a spring pad and a flat pad are further arranged on the screw rod, which is close to the big end, of the screw.
Further, the IGBT packaging piece further comprises a packaging shell, wherein a copper-clad ceramic substrate is arranged in the packaging shell, and a silicon wafer is arranged on the copper-clad ceramic substrate; the copper-clad ceramic substrate is arranged on the IGBT substrate, and the packaging shell is fixed on the IGBT substrate; and the conductors for the C pole and the E pole of the silicon wafer are respectively led out to the outer surface of the packaging shell.
Compared with the prior art, the invention has the following beneficial effects:
1. According to the application, the heat conduction and insulation ceramic sheet is added between the IGBT and the radiator, and the special insulation fixing piece is added between the radiator and the IGBT, so that the insulation performance between the IGBT electrode and the radiator is enhanced, and the application requirement of better dielectric strength can be met; the cost of additionally adding the ceramic plate and the insulating fixing piece on the radiator is lower than the cost of directly selecting high-grade dielectric strength, and the method has objective economic benefit.
2. The base plate, the screw, the spring washer, the flat pad, the metal screw sleeve and the radiator body of the IGBT are conductors; the ceramic plate and the structural adhesive are insulators; at the same time, the ceramic plate and the radiator body are also good heat conductors. The heat generated by the IGBT operation is firstly transferred to the ceramic plate, then the ceramic plate is transferred to the radiator body, and the radiator is transferred to the external environment in an air cooling or water cooling mode. The design ensures the heat dissipation capability of the IGBT.
3. The special metal gasket is arranged at the bolt fixing position, and the thickness of the special metal gasket is slightly higher than that of the ceramic plate, so that most of the bolt pretightening force is borne by the special metal gasket, and the ceramic plate is effectively prevented from being cracked.
4. After the fixing bolts are screwed down, the ceramic plates can be pressed by the middle parts of the IGBT substrates, so that most of bolt pretightening force is borne by the special metal gaskets, and the situation that the ceramic plates cannot be pressed is avoided.
Drawings
Fig. 1 is a general installation structure diagram of an IGBT;
FIG. 2 is an inversion schematic diagram of an IGBT assembly;
FIG. 3 is a partial exploded view of the present application;
FIG. 4 is a cross-sectional view of the present application;
FIG. 5 is an enlarged view of A in FIG. 4;
fig. 6 is a structural diagram of the bottom surface of the IGBT substrate having an arc shape.
Detailed Description
The scheme will now be further described with reference to the accompanying drawings.
Example 1
As shown in fig. 3-6, an insulating heat conducting and radiating structure based on a ceramic wafer comprises a radiator 1, wherein an IGBT package 4 is fixed on the radiator 1, and further comprises an insulating fixing piece 9; a ceramic chip 2 is arranged between the radiator 1 and the IGBT packaging piece 4; the insulating fixing member 9 sequentially fixes the IGBT package 4 and the ceramic plate 2 to the heat sink 1.
The IGBT packaging piece 4 comprises an IGBT substrate 10 arranged at the bottom, wherein the contact surface of the IGBT substrate 10 and the ceramic plate 2 is an arc-shaped surface 14, and the middle part of the arc-shaped surface 14 protrudes towards the ceramic plate 2; the arcuate surface 14 has a protrusion height of 100 microns to 200 microns.
The insulation fixing piece 9 comprises a groove formed in the radiator 1, a metal screw sleeve 1-3 is arranged in the groove, a structural rubber sleeve 1-2 is arranged between the metal screw sleeve 1-3 and the groove, and a screw 5 is connected in the metal screw sleeve 1-3; the screw 5 is matched with the metal screw sleeve 1-3 to sequentially fix the IGBT packaging piece 4 and the ceramic chip 2 on the radiator 1.
The screw 5 is also provided with a spring pad 6 and a flat pad 7 on the screw rod near the big end.
The IGBT packaging piece 4 further comprises a packaging shell, wherein a copper-clad ceramic substrate 12 is arranged in the packaging shell, and a silicon wafer 11 is arranged on the copper-clad ceramic substrate 12; the copper-clad ceramic substrate 12 is arranged on the IGBT substrate 10, and the packaging shell is fixed on the IGBT substrate 10; and conductors for the C pole and the E pole of the silicon wafer 11 are respectively led out to the outer surface of the packaging shell.
Example 2
As shown in fig. 3-6, an insulating heat conducting and radiating structure based on a ceramic wafer comprises a radiator 1, wherein an IGBT package 4 is fixed on the radiator 1, and further comprises an insulating fixing piece 9; a ceramic chip 2 is arranged between the radiator 1 and the IGBT packaging piece 4; the insulating fixing member 9 sequentially fixes the IGBT package 4 and the ceramic plate 2 to the heat sink 1.
The IGBT packaging piece 4 comprises an IGBT substrate 10 arranged at the bottom, the contact surface of the IGBT substrate 10 and the ceramic plate 2 is an arc-shaped surface 14, and the middle part of the arc-shaped surface 14 protrudes towards the ceramic plate 2. In order to increase the heat transfer efficiency, a heat conductive silica gel layer 8 is provided between the IGBT substrate 10 and the ceramic sheet 2, and between the ceramic sheet 2 and the heat sink 1.
The insulation fixing piece 9 comprises a groove formed in the radiator 1, a metal screw sleeve 1-3 is arranged in the groove, a structural rubber sleeve 1-2 is arranged between the metal screw sleeve 1-3 and the groove, and a screw 5 is connected in the metal screw sleeve 1-3; and adhering the fixed metal screw sleeve by adopting insulating structural adhesive to form the structural adhesive sleeve 1-2. The structure not only realizes the mechanical fixing function of the IGBT, but also solves the insulation problem of the IGBT fixing bolt.
The ceramic plate 2 is provided with a through hole, a special metal gasket 3 is arranged in the through hole, and the screw 5 sequentially penetrates through the IGBT substrate 10 and the special metal gasket 3 and then is matched with the metal screw sleeve 1-3 for fixing.
The thickness of the special metal gasket 3 is larger than that of the ceramic plate 2; the thickness difference between the tailored metal pad 3 and the ceramic plate 2 is preferably 40-80 microns.
The screw 5 is also provided with a spring pad 6 and a flat pad 7 on the screw rod near the big end.
The IGBT packaging piece 4 further comprises a packaging shell, wherein a copper-clad ceramic substrate 12 is arranged in the packaging shell, and a silicon wafer 11 is arranged on the copper-clad ceramic substrate 12; the copper-clad ceramic substrate 12 is arranged on the IGBT substrate 10, and the packaging shell is fixed on the IGBT substrate 10; and conductors for the C pole and the E pole of the silicon wafer 11 are respectively led out to the outer surface of the packaging shell.
In order to increase the heat transfer efficiency, a heat conductive silica gel layer 8 is provided between the IGBT substrate 10 and the ceramic sheet 2, and between the ceramic sheet 2 and the heat sink 1.
Example 3
On the basis of the embodiment 2, the dielectric strength between the electrode (C pole and E pole) and the radiator is determined by the structure of the device, that is, the dielectric strength between the electrode (C pole and E pole) and the radiator is equal to the dielectric strength between the electrode (C pole and E pole) and the IGBT substrate, the dielectric strength is generally 4kV, and the dielectric strength is not problematic if the IGBT is applied to the occasion with low dielectric strength requirement. However, for some occasions with high dielectric strength requirements, such as subway charger equipment, the dielectric strength of 5.5kV is required, and the method is not applicable.
In order to ensure that the IGBT with the dielectric strength of 1700V can meet the requirement of higher-grade dielectric strength, the scheme is that a heat-conducting and insulating ceramic sheet is added between the IGBT and a radiator, and a special insulation design is added at the position of a fixed threaded hole of the IGBT on the radiator.
Firstly, the ceramic plate basically solves the heat conduction and insulation problem between the IGBT and the radiator (the ceramic plate is a good heat conduction material and an insulating material), but because the IGBT substrate is a metal (generally copper) conductor, the fixing bolt of the IGBT substrate is also a metal conductor, and if no additional insulation design exists at the bolt fixing position, the IGBT substrate is still conducted with the metal radiator through the bolt. In order to solve the insulation problem of the bolt, a metal screw sleeve which is adhered and fixed through insulation structural adhesive is arranged on the radiator to serve as a fixed point of the IGBT. Through the design, good insulation between the IGBT substrate and the radiator can be realized, so that the insulation performance between the IGBT electrode and the radiator is enhanced, and the application requirement of 5.5kV with higher dielectric strength is met.
Because the ceramic plate belongs to brittle materials, the IGBT fixing part of the radiator possibly has the condition of sufficient flatness due to the composite structure of various materials, and when the IGBT bolt is installed, the ceramic plate is possibly cracked due to the effect of the pretightening force of the bolt, so that the thickness of the special metal gasket is slightly higher than that of the ceramic plate at the bolt fixing part, and the pretightening force of the bolt is mostly borne by the special metal gasket, thereby effectively avoiding the ceramic plate from being cracked.
Although the thickness of the special gasket is slightly higher than that of the ceramic plate at the fixed position of the IGBT, the situation that the ceramic plate cannot be pressed cannot be caused, because the design structure of the IGBT substrate is in the form of a middle protruding arc-shaped structure, after the fixing bolt is screwed down, the ceramic plate can be pressed by the middle part of the IGBT substrate.
The IGBT is not limited to the IGBT, and can be applied to other power devices such as high-power diodes and resistors. The application occasions are not only limited to the charger equipment, but also can be applied to traction inverters, auxiliary inverters and the like.
Finally, it is noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered by the scope of the claims of the present invention.
Claims (3)
1. The insulating heat conduction and dissipation structure based on the ceramic plate comprises a radiator (1), wherein an IGBT packaging piece (4) is fixed on the radiator (1), and the insulating heat conduction and dissipation structure is characterized by further comprising an insulating fixing piece (9); a ceramic wafer (2) is arranged between the radiator (1) and the IGBT packaging piece (4); the insulated fixing piece (9) sequentially fixes the IGBT packaging piece (4) and the ceramic piece (2) to the radiator (1); the IGBT packaging piece (4) comprises an IGBT substrate (10) arranged at the bottom, wherein the surface, which is contacted with the ceramic plate (2), of the IGBT substrate (10) is an arc-shaped surface (14), and the middle part of the arc-shaped surface (14) protrudes towards the ceramic plate (2); the insulation fixing piece (9) comprises a groove formed in the radiator (1), a metal screw sleeve (1-3) is arranged in the groove, a structural rubber sleeve (1-2) is arranged between the metal screw sleeve (1-3) and the groove, and a screw (5) is connected in the metal screw sleeve (1-3); the ceramic chip (2) is provided with a through hole, a special metal gasket (3) is arranged in the through hole, the screw (5) sequentially penetrates through the IGBT substrate (10) and the special metal gasket (3) and then is matched with the metal screw sleeve (1-3) for fixing, the thickness of the special metal gasket (3) is larger than that of the ceramic chip (2), and the structural rubber sleeve (1-2) is formed by bonding and fixing insulating structural rubber.
2. The ceramic-plate-based insulating heat-conducting heat-dissipating structure according to claim 1, wherein the screw (5) is further provided with a spring pad (6) and a flat pad (7) on the screw rod near the big end.
3. The ceramic wafer-based insulating heat conducting and radiating structure according to any one of claims 1-2, wherein the IGBT package (4) further comprises a package shell, a copper-clad ceramic substrate (12) is arranged in the package shell, and a silicon wafer (11) is arranged on the copper-clad ceramic substrate (12); the copper-clad ceramic substrate (12) is arranged on the IGBT substrate (10), and the packaging shell is fixed on the IGBT substrate (10); and conductors for the C pole and the E pole of the silicon wafer (11) are respectively led out to the outer surface of the packaging shell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233406.9A CN109300868B (en) | 2018-10-23 | 2018-10-23 | Insulating heat conduction heat radiation structure based on potsherd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811233406.9A CN109300868B (en) | 2018-10-23 | 2018-10-23 | Insulating heat conduction heat radiation structure based on potsherd |
Publications (2)
| Publication Number | Publication Date |
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| CN109300868A CN109300868A (en) | 2019-02-01 |
| CN109300868B true CN109300868B (en) | 2024-06-11 |
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| CN201811233406.9A Active CN109300868B (en) | 2018-10-23 | 2018-10-23 | Insulating heat conduction heat radiation structure based on potsherd |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108695280A (en) * | 2018-07-09 | 2018-10-23 | 株洲中车奇宏散热技术有限公司 | A kind of air cooling ceramic insulating radiation device and high pressure resistant insulation heat dissipating method |
| CN109979896B (en) * | 2019-03-07 | 2021-07-09 | 浙江叶尼塞电气有限公司 | Brand-new IGBT module |
| CN114823571B (en) * | 2022-04-29 | 2025-08-15 | 上海电气集团股份有限公司 | Novel-structure power module directly taking radiator as shell and preparation method |
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|---|---|
| CN109300868A (en) | 2019-02-01 |
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