CN109374528B - A spectrum measurement method under high pressure conditions - Google Patents
A spectrum measurement method under high pressure conditions Download PDFInfo
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- CN109374528B CN109374528B CN201811476394.2A CN201811476394A CN109374528B CN 109374528 B CN109374528 B CN 109374528B CN 201811476394 A CN201811476394 A CN 201811476394A CN 109374528 B CN109374528 B CN 109374528B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
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Abstract
本发明涉及材料研究领域，一种高压条件下的光谱测量方法，高压条件下的光谱测量装置包括上压力盘、下压力盘、调平螺丝、压力螺丝、顶砧限位螺丝、上支撑盘、下支撑盘、上顶砧、下顶砧、环形垫圈、压力媒介、样品、限位螺杆、光收集系统和激光器，能够在高压条件下研究样品的光谱特性，采用从上顶砧的冠部斜切面入射激光的方法，使得入射顶砧的激光和经过样品表面反射的激光分别通过顶砧的冠部斜切面进入和离开顶砧，使得激光在样品表面的入射角较大，更有效地过滤顶砧材料的光散射信号，从而使得顶砧的散射光与样品的散射光的分离度更高，样品散射信号的信噪比更大，无导轨结构来对顶砧施压，避免了由于部件松弛而造成的对样品施加压力的偏差。
The invention relates to the field of material research, and is a spectrum measurement method under high pressure conditions. The spectrum measurement device under high pressure conditions comprises an upper pressure plate, a lower pressure plate, a leveling screw, a pressure screw, an anvil limit screw, an upper support plate, a lower support plate, an upper anvil, a lower anvil, an annular gasket, a pressure medium, a sample, a limit screw, a light collection system and a laser. The spectrum characteristics of the sample can be studied under high pressure conditions. The method of incident laser from the crown bevel of the upper anvil is adopted, so that the laser incident on the anvil and the laser reflected by the sample surface enter and leave the anvil through the crown bevel of the anvil respectively, so that the incident angle of the laser on the sample surface is larger, and the light scattering signal of the anvil material is filtered more effectively, so that the separation degree of the scattered light of the anvil and the scattered light of the sample is higher, and the signal-to-noise ratio of the sample scattering signal is larger. There is no guide rail structure to apply pressure to the anvil, and the deviation of applying pressure to the sample caused by loose components is avoided.
Description
Technical Field
The invention relates to the field of material research, in particular to a spectrum measuring method under high pressure condition for researching spectrum characteristics of a sample under high pressure condition.
Background
The research of the change of certain characteristics of the material along with the applied pressure has great significance, and the high-pressure spectrum measurement technology is a typical research method, such as the inelastic scattering technology of visible light including Raman scattering, and is very suitable for researching the dependence of the characteristics of the material on photon energy, magnetic interaction, plasma energy, electron energy band structure and superconductive energy gap, and the pressure is applied to a material sample to be measured by adopting a pressure applying device such as a top anvil and the like, and the material is measured by combining the spectrum technology. In particular, the high-pressure light scattering technology is widely adopted, and has the advantages that the solid angle of scattered light emitted from a sample can be collected is large, and the scattered light signal of the sample is strong. However, the prior art devices also suffer from the disadvantage that certain special materials of the prior art that are opaque and have weak scattering signals have difficulty in obtaining clear raman scattering spectra, particularly materials having spectral ranges that overlap with the single photon and two photon raman scattering spectra of the anvil material. The high-pressure spectrum measurement in the prior art generally adopts a supporting table combined with a diamond anvil, the supporting table is pressed along a fixed guide rail to apply pressure to a sample, the relaxation of the guide rail can cause small deviation of displacement, and the pressure deviation between the anvil is caused by uneven distribution of the pressure of the supporting table to the bottom surface of the anvil, so that the problem can be solved by the spectrum measurement method under the high-pressure condition.
Disclosure of Invention
In order to solve the above problems, an object of the present invention is to more effectively filter a light scattering signal of a anvil material, the method of the present invention allows laser light incident to the anvil and laser light reflected by the surface of a sample to enter and leave the anvil through a crown chamfer of the anvil, respectively, and in addition, the present invention applies pressure to the sample using a rail-free structure, thereby avoiding pressure deviation due to aging relaxation of components.
The technical scheme adopted by the invention is as follows:
The spectrum measuring device under the high pressure condition comprises an upper pressure disc, a lower pressure disc, a leveling screw, a pressure screw, an anvil limit screw, an upper support disc, a lower support disc, an upper anvil, a lower anvil, an annular gasket, a pressure medium, a sample, a limit screw, a light collecting system and a laser, wherein xyz is a three-dimensional space coordinate system, the names corresponding to all parts of a diamond standard cutting tool comprise a table top, a crown part, a waist part, a pavilion part and a bottom surface, the bottom surface of the upper anvil is downward, the bottom surface of the lower anvil is upward, the annular gasket is positioned between the bottom surface of the upper anvil and the bottom surface of the lower anvil, the annular gasket is provided with a pressure medium, a sample is positioned in the pressure medium, when high pressure is applied to the sample, the upper anvil and the lower anvil are mutually close, the pressure medium is applied to the sample, the area corresponding to light that can be collected by the light collecting system is called a light collecting area, the upper pressure disc and the lower pressure disc are all made of steel circles with the outer diameter of ten centimeters and are elastic, the upper pressure disc and the lower pressure disc are coaxially arranged in the vertical y direction, the upper pressure disc is provided with three screw holes, the upper pressure disc and the upper screw holes are uniformly distributed with the three screw holes 5M, the upper screw holes M and the lower screw holes M4 are uniformly distributed, the upper screw holes M4 are distributed at the three screw holes M4 are distributed, the upper screw holes M4 are distributed at the upper screw holes M4 and 3, the screw holes M4 are uniformly and 3M 4 are distributed, the screw holes 5, the screw holes are distributed at the upper screw holes 5M and 3M 4 are uniformly and 3, and 3M 4M and 3, 3 screw and 3. The upper surface of the lower pressure disc is provided with three uniformly distributed anvil limiting screws on the circumference of which the distance from the center is two centimeters, the upper support disc and the lower support disc are silicon carbide rings with the outer diameter of three centimeters, the light collecting system is positioned right above the center of the upper support disc, the upper support disc is nested in the upper pressure disc and fixedly connected with the upper support disc, the lower support disc is nested in the lower pressure disc, the lower support disc can be finely adjusted through the three anvil limiting screws, the relative position between the lower support disc and the lower pressure disc in the horizontal plane can be changed, the upper anvil and the lower anvil are processed by adopting diamond standard cutting, the included angle between the crown chamfer and the table surface is 40 degrees, the lower part of the inner side of the upper support disc is provided with a chamfer which is 40 degrees with the horizontal direction, the inner side chamfer of the lower support disc is in contact with the crown chamfer of the lower anvil which is 40 degrees with the horizontal direction, and the upper anvil can sequentially irradiate laser medium and the upper anvil can sequentially irradiate laser on the sample.
The method for spectrum measurement under high pressure comprises the following steps:
Placing an annular gasket on the bottom surface of a lower anvil, placing a pressure medium in the annular gasket, and placing a sample in the pressure medium;
Step two, three leveling screws and three pressure screws are adjusted to change the distance between the upper pressure disc and the lower pressure disc until the distance between the bottom surface of the upper anvil and the pressure medium on the bottom surface of the lower anvil is 100-150 micrometers;
Step three, adjusting three leveling screws to enable an upper pressure disc to be parallel to a lower pressure disc, enabling the bottom surface of an upper anvil and the bottom surface of a lower anvil to be parallel to the upper pressure disc and the lower pressure disc respectively, and fixing the positions of the three leveling screws by adopting limit screws;
Step four, adjusting three pressure screws to enable the central parts of the upper pressure disc and the lower pressure disc to generate slight elastic deflection bending so as to enable the upper anvil and the lower anvil to be continuously close until the pressure medium distance between the bottom surface of the upper anvil and the bottom surface of the lower anvil is 20 micrometers, and then adjusting three anvil limiting screws to enable the lower anvil to be subjected to position adjustment in the horizontal direction so as to enable the bottom surface of the upper anvil to be aligned with the bottom surface of the lower anvil;
fifthly, adjusting three pressure screws to enable the upper pressure disc and the lower pressure disc to be further biased to bend, so that the upper anvil can apply pressure to the sample through a pressure medium, wherein the pressure ranges from 5Gpa to 30Gpa;
step six, adjusting the light collecting system to make the light collecting area of the light collecting system be an inverted cone taking the sample as a vertex, wherein the typical value of the solid angle range is 10-30 degrees;
step seven, laser emitted by the laser enters from the crown oblique surface of the upper anvil at normal direction, and enters the sample after refraction is generated at the interface of the upper anvil and the pressure medium;
Step eight, part of scattered light generated by the sample under the action of laser and located in a light collecting area of the light collecting system enters the light collecting system;
and step nine, analyzing scattered light information of the sample acquired by the light collecting system for material characteristic research.
The beneficial effects of the invention are as follows:
The method can effectively and spatially separate the scattered light of the anvil from the scattered light of the sample, and can increase the signal to noise ratio of the scattered signal of the sample, so that the sufficiently strong scattered signal of the sample can be obtained without focusing laser on a smaller area on the sample, and the damage to the sample caused by the heat generation on the surface of the sample due to local laser can be avoided.
Drawings
The following is further described in connection with the figures of the present invention:
FIG. 1 is a schematic illustration of the present invention;
FIG. 2 is a schematic top view of an upper pressure plate;
FIG. 3 is an enlarged schematic view of the upper and lower anvils;
Fig. 4 is a schematic diagram of a diamond standard cut.
In the figure, 1, an upper pressure disk, 2, a lower pressure disk, 3, leveling screws, 4, pressure screws, 5, a top anvil limit screw, 6, an upper support disk, 7, a lower support disk, 8, an upper top anvil, 8-1, a table top, 8-2, a crown, 8-3, a lumbar plane, 8-4, a pavilion, 8-5, a bottom surface, 9, a lower top anvil, 10, an annular gasket, 11, a pressure medium, 12, a sample, 13, a limit screw, 14, a light collecting system, 15, and a laser.
Detailed Description
Fig. 1 is a schematic diagram of the invention, fig. 2 is a schematic diagram of an upper pressure plate in plan view, which comprises an upper pressure plate (1), a lower pressure plate (2), leveling screws (3), pressure screws (4), anvil limiting screws (5), an upper supporting plate (6), a lower supporting plate (7), an upper anvil (8), a lower anvil (9), an annular gasket (10), a pressure medium (11), a sample (12), a limiting screw (13), a light collecting system (14) and a laser (15), xyz is a three-dimensional space coordinate system, the upper pressure plate (1) and the lower pressure plate (2) are made of steel with ten cm outer diameter and are elastic, the upper pressure plate (1) and the lower pressure plate (2) are coaxially arranged in the vertical y direction, three uniformly distributed M5 screw holes are formed on the circumference of the upper pressure plate (1) with three uniformly distributed screw holes on the circumference of the center of three screw holes, limit screws (13) are formed on the side surfaces of each M4 screw hole, the lower pressure plate (2) is provided with three M5 screw holes corresponding to the three M5 screw holes, the upper pressure plate (1) and the lower pressure plate (2) are uniformly distributed on the circumference of the upper pressure plate (1) with three screw holes (4), the pressure screw (4) connects the lower pressure disc (2) with the upper pressure disc (1) through an M5 screw hole, the leveling screw (3) is an M4 screw and the top end of the leveling screw is conical, the leveling screw (3) passes through the M4 screw hole of the upper pressure disc (1) and the top end of the leveling screw is positioned in a conical groove of the lower pressure disc (2), three uniformly distributed anvil limiting screws (5) are arranged on the circumference of the upper surface of the lower pressure disc (2) which is two centimeters away from the center, the upper supporting disc (6) and the lower supporting disc (7) are silicon carbide circular rings with the outer diameter of three centimeters, the light collecting system (14) is positioned right above the center of the upper supporting disc (6), the area corresponding to the light which can be collected by the light collecting system (14) is called a light collecting area, the upper supporting disc (6) is nested in the upper pressure disc (1) and fixedly connected, the lower supporting disc (7) is nested in the lower pressure disc (2), the lower supporting disc (7) can be finely adjusted by three anvil limiting screws (5), the relative position between the lower supporting disc (7) and the lower pressure disc (2) in a horizontal plane can be changed, the upper anvil (8) and the lower anvil (9) are processed by adopting diamond standard cutting, and the upper supporting disc is provided with a table top (8-1), a crown (8-2), a waist surface (8-3), a pavilion (8-4) and a bottom surface (8-5), the included angle between the crown chamfer and the table top (8-1) is 40 degrees, the lower part of the inner side of the upper supporting disk (6) is provided with a chamfer which is 40 degrees with the horizontal direction, the inner side chamfer of the upper supporting disk (6) is contacted with the crown chamfer of the upper anvil (8), the upper part of the inner side of the lower supporting disk (7) is provided with a chamfer which is 40 degrees with the horizontal direction, the inner side chamfer of the lower supporting disk (7) is contacted with the crown chamfer of the lower anvil (9), and laser emitted by the laser (15) can be normally incident to the crown chamfer of the upper anvil (8) and sequentially enter the sample (12) through the upper anvil (8) and the pressure medium (11).
As shown in fig. 3, which is an enlarged schematic view of the upper anvil and the lower anvil, the bottom surface of the upper anvil (8) is downward, the bottom surface of the lower anvil (9) is upward, the ring gasket (10) is located between the bottom surface of the upper anvil (8) and the bottom surface of the lower anvil (9), the ring gasket (10) has a pressure medium (11), the sample (12) is located in the pressure medium (11), when a high pressure is applied to the sample (12), the upper anvil (8) and the lower anvil (9) are close to each other, and the pressure is applied to the sample (12) through the pressure medium (11), the high pressure range is 5GPa to 30GPa, and the area corresponding to the light that can be collected by the light collecting system (14) is called a light collecting area.
As shown in FIG. 4, the standard diamond cutter is schematically shown, and the names of each part of the standard diamond cutter are a table top (8-1), a crown (8-2), a waist (8-3), a pavilion (8-4) and a bottom (8-5).
The spectrum measuring device under the high pressure condition comprises an upper pressure disc (1), a lower pressure disc (2), a leveling screw (3), a pressure screw (4), a top anvil limit screw (5), an upper support disc (6), a lower support disc (7), an upper top anvil (8), a lower top anvil (9), an annular gasket (10), a pressure medium (11), a sample (12), a limit screw (13), a light collecting system (14) and a laser (15), xyz is a three-dimensional space coordinate system, and names corresponding to all parts of diamond standard cutting comprise a table top (8-1), a crown (8-2), a waist (8-3), a waist surface (8-3), The upper anvil (8-4) and the lower anvil (8-5) are arranged at the bottom surface of the upper anvil (8) downwards, the bottom surface of the lower anvil (9) is upwards, the bottom surface of the upper anvil (8) is downwards, the bottom surface of the lower anvil (9) is upwards, the annular gasket (10) is arranged between the bottom surface of the upper anvil (8) and the bottom surface of the lower anvil (9), the annular gasket (10) is provided with a pressure medium (11), the sample (12) is arranged in the pressure medium (11), when high pressure is applied to the sample (12), the upper anvil (8) and the lower anvil (9) are mutually close, the pressure is applied to the sample (12) through the pressure medium (11), the high pressure range is 5GPa to 30GPa, the area corresponding to the light which can be collected by the light collecting system (14) is called the light collecting area, the upper pressure disc (1) and the lower pressure disc (2) are all made of steel circular with the outer diameter of ten centimeters, the upper pressure disc (1) and the lower pressure disc (2) are coaxially arranged in the vertical y direction, the upper pressure disc (1) is provided with three screw holes (M) with three screw holes (5) which are uniformly distributed at the circumference (M) and three screw holes (5M) are distributed at the center (5M) and four sides (4) are distributed at the center (5M) of the screw holes (5M) are distributed uniformly and correspond with the M5 screw hole of the upper pressure disc (1), the upper surface of the lower pressure disc (2) is provided with three conical grooves which are uniformly distributed and correspond with the M4 screw hole of the upper pressure disc (1), the pressure screw (4) is an M5 screw, the pressure screw (4) connects the lower pressure disc (2) with the upper pressure disc (1) through the M5 screw hole, the leveling screw (3) is an M4 screw and the top end of the leveling screw is conical, and the leveling screw (3) is connected with the upper pressure disc (1) through the M4 screw hole of the upper pressure disc (1), The top end of the upper supporting disc is positioned in a conical groove of the lower pressure disc (2), three anvil limiting screws (5) which are uniformly distributed are arranged on the circumference of the upper surface of the lower pressure disc (2) which is two centimeters away from the center, the upper supporting disc (6) and the lower supporting disc (7) are all silicon carbide rings with the outer diameter of three centimeters, the light collecting system (14) is positioned right above the center of the upper supporting disc (6), the upper supporting disc (6) is nested in the upper pressure disc (1) and connected and fixed, the lower supporting disc (7) is nested in the lower pressure disc (2), the lower supporting disc (7) can be finely adjusted through the three anvil limiting screws (5), the relative position between the lower supporting disc (7) and the lower pressure disc (2) in the horizontal plane can be changed, and the upper anvil (8) and the lower anvil (9) are formed by diamond standard cutting, And has a table top (8-1), a crown (8-2), a waist surface (8-3), Pavilion (8-4) and bottom surface (8-5), the contained angle of crown chamfer and mesa (8-1) is 40 degrees, the inboard lower part of last supporting disk (6) has the chamfer that is 40 degrees with the horizontal direction, the inboard chamfer of last supporting disk (6) and the crown chamfer contact of last anvil (8), the inboard upper portion of lower supporting disk (7) has the chamfer that is 40 degrees with the horizontal direction, the inboard chamfer of lower supporting disk (7) and the crown chamfer contact of lower anvil (9), the laser beam that laser instrument (15) launched can be with normal incidence crown chamfer of last anvil (8) to through last anvil (8) and pressure medium (11) incident to sample (12) in proper order.
The invention relates to a principle of spatially separating scattered light of a diamond anvil and scattered light of a sample, which comprises the following steps:
The scattered light of the sample is mainly located in a range of about 45 degrees of solid angle perpendicular to the surface of the sample, while the scattered light of the diamond anvil is mainly concentrated in the light path of the laser entering the anvil and the vicinity of the light path of the laser in the anvil after being reflected by the surface of the sample, the laser enters from the crown chamfer of the diamond anvil, the incident angle on the surface of the sample is larger, the corresponding reflection angle is also larger, so that the scattered light and fluorescence of the diamond can be better separated from the scattered light of the sample, the refractive index of the pressure medium between the anvil and the sample is lower than that of the diamond, the refractive index of the laser beam in the process of leaving the anvil and entering the pressure medium is stronger, and the refractive angle is larger, as shown in fig. 3, so that the spatial separation between the scattered light of the diamond and the scattered light of the sample can be further increased.
It should be noted that since the angle at which the laser beam enters the diamond anvil and impinges on the diamond-pressure medium interface is greater than the critical angle of the diamond-air interface, the refractive index n p of the pressure medium cannot be too small, otherwise the laser beam will be totally reflected back into the anvil, on the other hand, in order to have a larger angle of refraction when the laser beam enters the pressure medium from the diamond, and to ensure that n p cannot be too large, a suitable value of n p needs to be chosen, n p typically being 1.4.
The method for spectrum measurement under high pressure comprises the following steps:
Firstly, placing an annular gasket (10) on the bottom surface of a lower anvil (9), placing a pressure medium (11) in the annular gasket (10), and placing a sample (12) in the pressure medium (11);
Step two, three leveling screws (3) and three pressure screws (4) are adjusted to change the distance between the upper pressure disc (1) and the lower pressure disc (2) until the distance between the bottom surface of the upper anvil (8) and the pressure medium (11) on the bottom surface of the lower anvil (9) is 100-150 micrometers;
Step three, adjusting three leveling screws (3) to enable an upper pressure disc (1) to be parallel to a lower pressure disc (2), enabling the bottom surface of an upper anvil (8) and the bottom surface of a lower anvil (9) to be parallel to the upper pressure disc (1) and the lower pressure disc (2) respectively, and fixing the positions of the three leveling screws (3) by adopting limit screws (13);
Step four, adjusting three pressure screws (4) to enable the central parts of the upper pressure disc (1) and the lower pressure disc (2) to generate slight elastic deflection bending so as to enable the upper top anvil (8) to be continuously close to the lower top anvil (9) until the distance between the bottom surface of the upper top anvil (8) and a pressure medium (11) on the bottom surface of the lower top anvil (9) is 20 micrometers, and then adjusting three top anvil limit screws (5) to adjust the position of the lower top anvil (9) in the horizontal direction so as to enable the bottom surface of the upper top anvil (8) to be aligned with the bottom surface of the lower top anvil (9);
Fifthly, adjusting three pressure screws (4) to enable the upper pressure disc (1) and the lower pressure disc (2) to be further biased to bend, so that the upper anvil (8) can apply pressure to the sample (12) through a pressure medium (11), wherein the pressure ranges from 5Gpa to 30Gpa;
Step six, adjusting the light collection system (14) so that the light collection area is an inverted cone with the sample as a vertex, and the typical value of the solid angle range is 10 to 30 degrees;
step seven, laser emitted by a laser (15) enters from a crown chamfer of the upper anvil (8) in normal direction, and enters the sample (12) after refraction is generated at the interface of the upper anvil (8) and the pressure medium (11);
step eight, a part of scattered light generated by the sample (12) under the action of laser light, which is positioned in a light collecting area of the light collecting system (14), enters the light collecting system (14);
And step nine, analyzing scattered light information of the sample (12) acquired by the light collecting system (14) for material characteristic research.
The invention adopts the method of incidence laser from the crown chamfer of the upper anvil, so that the incidence angle of the laser on the surface of the sample is larger, the separation degree of the scattered light of the anvil and the scattered light of the sample is higher, and the signal to noise ratio of the scattered signal of the sample is larger.
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| CN108414361A (en) * | 2018-02-08 | 2018-08-17 | 中国工程物理研究院上海激光等离子体研究所 | A kind of Static pressure diamond anvil cell device moving loading experiment suitable for laser |
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| DE4140988C2 (en) * | 1991-12-12 | 1996-04-25 | Max Planck Gesellschaft | Generation of Planck's blackbody radiation with a point light source |
| DE60141129D1 (en) * | 2000-04-21 | 2010-03-11 | Carnegie Inst Of Washington | HIGH-PRESSURE FAMILY AND OPTICAL WINDOW |
| DE50304662D1 (en) * | 2002-04-03 | 2006-09-28 | Univ Jw Goethe Frankfurt Main | INFRARED MEASURING DEVICE FOR THE SPECTROMETRY OF AQUEOUS AND NON-AQUEOUS SYSTEMS |
| CN103822910A (en) * | 2012-11-16 | 2014-05-28 | 福州高意通讯有限公司 | Raman probes for miniature Raman spectrometer |
| CN104897641A (en) * | 2015-05-15 | 2015-09-09 | 天津大学 | Raman spectrum acquisition system with low background noise |
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| CN108414361A (en) * | 2018-02-08 | 2018-08-17 | 中国工程物理研究院上海激光等离子体研究所 | A kind of Static pressure diamond anvil cell device moving loading experiment suitable for laser |
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Application publication date: 20190222 Assignee: YIWU B&W MINING MACHINERY Co.,Ltd. Assignor: Jinhua Vocational and Technical University Contract record no.: X2025980007153 Denomination of invention: A Spectral Measurement Method under High Pressure Conditions Granted publication date: 20241203 License type: Common License Record date: 20250411 Application publication date: 20190222 Assignee: YIWU MULTI-UNION MINING MACHINERY SUPERMARKET Co.,Ltd. Assignor: Jinhua Vocational and Technical University Contract record no.: X2025980007152 Denomination of invention: A Spectral Measurement Method under High Pressure Conditions Granted publication date: 20241203 License type: Common License Record date: 20250411 Application publication date: 20190222 Assignee: ZHEJIANG SHENGDA MACHINERY Co.,Ltd. Assignor: Jinhua Vocational and Technical University Contract record no.: X2025980007151 Denomination of invention: A Spectral Measurement Method under High Pressure Conditions Granted publication date: 20241203 License type: Common License Record date: 20250411 Application publication date: 20190222 Assignee: YIWU XINGYING IMPORT AND EXPORT Co.,Ltd. Assignor: Jinhua Vocational and Technical University Contract record no.: X2025980007157 Denomination of invention: A Spectral Measurement Method under High Pressure Conditions Granted publication date: 20241203 License type: Common License Record date: 20250411 Application publication date: 20190222 Assignee: YIWU XINYIDAI ORE MACHINERY TECHNOLOGY DEVELOPMENT CO.,LTD. Assignor: Jinhua Vocational and Technical University Contract record no.: X2025980007156 Denomination of invention: A Spectral Measurement Method under High Pressure Conditions Granted publication date: 20241203 License type: Common License Record date: 20250411 Application publication date: 20190222 Assignee: YIWU MINGYAO INTELLIGENT TECHNOLOGY Co.,Ltd. Assignor: Jinhua Vocational and Technical University Contract record no.: X2025980007155 Denomination of invention: A Spectral Measurement Method under High Pressure Conditions Granted publication date: 20241203 License type: Common License Record date: 20250411 Application publication date: 20190222 Assignee: YIWU HONGJI ENERGY SAVING TECHNOLOGY Co.,Ltd. Assignor: Jinhua Vocational and Technical University Contract record no.: X2025980007154 Denomination of invention: A Spectral Measurement Method under High Pressure Conditions Granted publication date: 20241203 License type: Common License Record date: 20250411 |