CN109461695A - A kind of wafer bonding method - Google Patents
A kind of wafer bonding method Download PDFInfo
- Publication number
- CN109461695A CN109461695A CN201811185428.2A CN201811185428A CN109461695A CN 109461695 A CN109461695 A CN 109461695A CN 201811185428 A CN201811185428 A CN 201811185428A CN 109461695 A CN109461695 A CN 109461695A
- Authority
- CN
- China
- Prior art keywords
- wafer
- wafer bonding
- bonding method
- silicon oxide
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims abstract description 24
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims abstract description 21
- 238000004140 cleaning Methods 0.000 claims description 17
- 229910021529 ammonia Inorganic materials 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 229910001868 water Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 238000011065 in-situ storage Methods 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 238000005496 tempering Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 238000003786 synthesis reaction Methods 0.000 claims description 3
- 230000004913 activation Effects 0.000 claims 1
- 238000004062 sedimentation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 107
- 125000003277 amino group Chemical group 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 238000010586 diagram Methods 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 229910018557 Si O Inorganic materials 0.000 description 9
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 9
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 125000004433 nitrogen atom Chemical group N* 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910014299 N-Si Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910008051 Si-OH Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006358 Si—OH Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/018—Manufacture or treatment of image sensors covered by group H10F39/12 of hybrid image sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
Abstract
本发明提供一种晶圆键合方法，包括：提供至少两片表面包括氧化硅层的晶圆；对其中至少一片晶圆的氧化硅层进行氨化处理，以在氧化硅层的表面形成氨基介质层；通过氨基介质层将晶圆键合，以在晶圆键合面形成超临界状态的氨气。从而在较低的反应温度及反应压强的条件下，减小气泡尺寸，提高产品质量及产率。
The present invention provides a wafer bonding method, comprising: providing at least two wafers with silicon oxide layers on their surfaces; performing ammoniation treatment on the silicon oxide layers of at least one of the wafers to form amino groups on the surfaces of the silicon oxide layers Dielectric layer; the wafer is bonded through the amino dielectric layer to form supercritical ammonia gas on the wafer bonding surface. Therefore, under the conditions of lower reaction temperature and reaction pressure, the size of the bubbles is reduced, and the product quality and yield are improved.
Description
Technical field
The invention belongs to field of semiconductor manufacture, are related to a kind of wafer bonding method.
Background technique
In the art of semiconductor manufacturing, it is often necessary to by wafer bonding to together.But during wafer bonding,
At wafer bonding face, presence or the gas that generates in wafer bonding due to particle cannot release wafer bonding in time
Face causes to form a large amount of bubble at wafer bonding face.
Structural schematic diagram such as Fig. 1, after illustrating two panels wafer bonding in the prior art.Wherein, in wafer 101 and wafer
102 when being bonded, and gaseous state H can be generated at wafer bonding face 1032O, gaseous state H2If O cannot be excluded in time, will stay in
At wafer bonding face 103, bubble 104 is formed, such as Fig. 2.The part bubble 104 can reduce product quality, influence yield.Fig. 3 a~
3c illustrates the reaction mechanism schematic diagram of two panels wafer bonding in the prior art.Since the electronegativity of oxygen atom is greater than silicon atom,
2 electronics of silicon oxygen bond (Si-O key) are thus formed closer to oxygen atom, so that silicon atom band part positive charge (+),
Oxygen atom band part negative electrical charge (-).Due to chemical reaction be all towards be conducive to generate H2What the direction of O carried out, thus in crystalline substance
When round key closes, since the reaction at wafer bonding face 103 has gaseous state H2The generation of O, so the reaction energy at wafer bonding face 103
It enough goes on smoothly, but part gaseous state H2O usually will form bubble 104, to reduce product quality, influence yield.
Therefore, it is necessary to a kind of wafer bonding method is provided, during wafer bonding, to reduce the size of bubble,
Improve product quality and yield, it has also become current urgent problem to be solved.
Summary of the invention
In view of the foregoing deficiencies of prior art, it the purpose of the present invention is to provide a kind of wafer bonding method, is used for
Solve the problems, such as that product quality is low and low yield caused by the bubble generated in wafer bonding face.
In order to achieve the above objects and other related objects, the present invention provides a kind of wafer bonding method, comprising the following steps:
There is provided at least two panels wafer, the surface of the wafer includes silicon oxide layer；
Ammoniated treatment is carried out to the silicon oxide layer of at least a piece of wafer, to form ammonia on the surface of the silicon oxide layer
Base dielectric layer；
By the amino dielectric layer by the wafer bonding, to form the ammonia of supercriticality in the wafer bonding face
Gas.
Optionally, during being bonded the wafer, generating in the wafer bonding face has water, the state packet of the water
Include one of supercriticality and gaseous state.
Optionally, the method for forming the silicon oxide layer includes atomic layer deposition method, chemical vapour deposition technique and life in situ
One of regular way.
Optionally, the method for the ammoniated treatment includes magnetron sputtering plasma ammoniated treatment, inductively coupled plasma
One of body ammoniated treatment and DPN processing.
Optionally, the range for forming the temperature of the ammonia of the supercriticality includes 132.4 DEG C~350 DEG C of reaction, and
The range of reaction pressure includes 11.28MPa~20MPa.
Optionally, in the step of being bonded the wafer, further include the steps that tempering.
Optionally, plasma-activated processing and cleaning treatment are included the steps that in the step of being bonded the wafer.
Optionally, the working gas of the plasma-activated processing includes one of nitrogen and oxygen or combination；Institute
The used cleaning solution of the step of stating cleaning treatment includes in the cleaning solution of deionized water, the cleaning solution containing ammonia and hydrofluoric acid containing
It is a kind of.
Optionally, the ratio range of the area of the area and wafer bonding face for the bubble that the wafer bonding face is formed
Including 0.1%~1%.
Optionally, any of the above-described wafer bonding method includes being applied to preparation one of SOI and back-illuminated type CMOS.
As described above, wafer bonding method of the invention, have the advantages that by the silicon oxide layer to wafer into
Row ammoniated treatment, to form amino dielectric layer on the surface of silicon oxide layer, then by amino dielectric layer by wafer bonding, with
Wafer bonding face forms the ammonia of supercriticality, to reduce gas under conditions of lower reaction temperature and reaction pressure
Size is steeped, product quality and yield are improved.
Detailed description of the invention
Fig. 1 is shown as the structural schematic diagram after two panels wafer bonding in the prior art.
Fig. 2 is shown as the pattern schematic diagram of the bubble at wafer bonding face in the prior art.
Fig. 3 a~3c is shown as the reaction mechanism schematic diagram of wafer bonding in Fig. 1.
Fig. 4 is shown as carrying out the process flow chart of wafer bonding in the present invention.
Fig. 5 is shown as the structural schematic diagram that amino dielectric layer is formed on the first wafer in the present invention.
Fig. 6 is shown as the structural schematic diagram of the second circle in the present invention.
Fig. 7 is shown as being bonded the structural schematic diagram after the first wafer and the second wafer in the present invention.
Fig. 8 a~8c is shown as the reaction mechanism schematic diagram of ammoniated treatment in the present invention.
Fig. 9 a~9c is shown as carrying out the reaction mechanism schematic diagram of plasma-activated processing and cleaning treatment in the present invention.
Figure 10 a~10c is shown as being bonded the reaction mechanism schematic diagram of the first wafer and the second wafer in the present invention.
Component label instructions
101,102 wafer
103 wafer bonding faces
104 bubbles
110 first wafers
111 silicon substrates
112 silicon oxide layers
130 amino dielectric layers
120 second wafers
121 silicon substrates
122 dielectric layers
123 silicon oxide layers
140 wafer bonding faces
Specific embodiment
Illustrate embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this specification
Other advantages and efficacy of the present invention can be easily understood for disclosed content.The present invention can also pass through in addition different specific realities
The mode of applying is embodied or practiced, the various details in this specification can also based on different viewpoints and application, without departing from
Various modifications or alterations are carried out under spirit of the invention.
Please refer to Fig. 4~Figure 10 c.It should be noted that diagram provided in the present embodiment only illustrates in a schematic way
Basic conception of the invention, only shown in schema then with related component in the present invention rather than package count when according to actual implementation
Mesh, shape and size are drawn, when actual implementation each component kenel and ratio can arbitrarily change for one kind, and its component
Being laid out kenel may also be increasingly complex.
As shown in figure 4, the present invention provides a kind of wafer bonding method, comprising the following steps:
There is provided at least two panels wafer, the surface of the wafer includes silicon oxide layer；
Ammoniated treatment is carried out to the silicon oxide layer of at least a piece of wafer, to form ammonia on the surface of the silicon oxide layer
Base dielectric layer；
By the amino dielectric layer by the wafer bonding, to form the ammonia of supercriticality in the wafer bonding face
Gas.
The present invention carries out ammoniated treatment by the silicon oxide layer to wafer, to form amino medium on the surface of silicon oxide layer
Layer, then by amino dielectric layer by wafer bonding, to form the ammonia of supercriticality in wafer bonding face, thus lower
Reaction temperature and reaction pressure under conditions of, reduce bubble size, improve product quality and yield.
Specifically, the number of the wafer can be to be N number of, wherein N >=2, only need to ensure to need in N number of wafer
The surface for the wafer being bonded is the silicon oxide layer containing silicon oxygen bond (Si-O key), the specific number of the wafer
Herein with no restriction.
Such as Fig. 5, first offer semiconductor substrate, the semiconductor substrate includes silicon substrate 111, Yu Suoshu silicon substrate 111
Upper surface silicon oxide layer deposited 112, thus the silicon substrate 111 surface formed the first wafer 110 containing Si-O key.
Wherein, the method for depositing the silicon oxide layer 112 includes one of atomic layer deposition method and chemical vapour deposition technique, herein not
It is restricted.Such as Fig. 6, the second wafer 120 to be bonded is provided, second wafer 120 may include semiconductor substrate, described partly to lead
Body substrate includes silicon substrate 121, dielectric layer 122 and the silicon oxide layer 123 positioned at 122 surface of dielectric layer.The silicon substrate
121, metal line or device be may also comprise inside dielectric layer 122 and silicon oxide layer 123, herein with no restriction.The silica
The forming method of layer 123 includes atomic layer deposition method and chemical vapour deposition technique, and the silicon oxide layer 123, which also can be only, to be given an account of
Matter layer 122 is formed by the silicon oxide layer containing Si-O key through in situ synthesis, herein with no restriction.First wafer 110
Can also be without silicon oxide layer deposited 112 the step of, and in situ synthesis is used, in the surface shape of the silicon substrate 111
At the silicon oxide layer with Si-O key, herein with no restriction.
Then, ammoniated treatment is carried out to the silicon oxide layer 112 in first wafer 110, in the silica
The surface of layer 112, which is formed, has amino (- NH2) amino dielectric layer 130.
Specifically, the method for the ammoniated treatment includes magnetron sputtering plasma ammoniated treatment, inductively coupled plasma
One of body ammoniated treatment and DPN processing.The working gas of the ammoniated treatment includes ammonia (NH3).Fig. 8 a~8c, signal
The reaction mechanism schematic diagram of ammoniated treatment.Such as Fig. 8 a, when carrying out ammoniated treatment to first wafer 110, the oxidation
The Si-O key in silicon layer 112 is broken off.Working gas NH in the Si-O key being broken off and the ammoniated treatment3Knot
It closes, forms hydrogen-oxygen key (- OH) and amino (- NH2), such as Fig. 8 b~Fig. 8 c, contain to be formed on the surface of the silicon oxide layer 112
There is-NH2The amino dielectric layer 130.
It, can also be to the oxidation in second wafer 120 to be bonded as the further embodiment of the embodiment
Silicon layer 123 carries out ammoniated treatment, has amino (- NH to be formed on the surface of the silicon oxide layer 1232) amino dielectric layer.
Those skilled in the art select according to specific needs, herein with no restriction.Preferably to playing carrier function, containing compared with
First wafer 110 of few function element carries out the ammoniated treatment, in order to reduce the damage to wafer.
Finally, such as Fig. 7, by containing-NH2The amino dielectric layer 130 by first wafer 110 and described second
Wafer 120 is bonded, to form supercriticality in the bonding face 140 of first wafer 110 and second wafer 120
NH3。
As the further embodiment of the embodiment, the step of being bonded first wafer 110 and the second wafer 120
In, include the steps that plasma-activated processing and cleaning treatment.The working gas of the plasma-activated processing includes nitrogen
One of gas and oxygen or combination；The step of cleaning treatment, used cleaning solution included deionized water, containing the clear of ammonia
One of washing lotion and the cleaning solution of hydrofluoric acid containing.
Specifically, the effect of the plasma-activated processing is that the Si-O key is broken to form silicon dangling bonds, it is described
The effect of cleaning treatment be by the silicon dangling bonds generate Si-OH, form the amino dielectric layer 130 of stable state, as Fig. 9 a~
9c.Then such as Figure 10 a~10c, first wafer 110 and the institute of the plasma-activated processing and cleaning treatment will be passed through
The second wafer 120 is stated to be bonded, due to atomic electronegativity O > N > Si > H, nitrogen-atoms electronegativity is greater than silicon atom, so that
2 electronics of N-Si singly-bound are formed closer to nitrogen-atoms, thus silicon atom band part positive charge (+), similarly oxygen atom band portion
Divide negative electrical charge (-), O-H key gradually weakens with Si-N key, and new keys N-H key and Si-O key increasingly generate, therefore reacts and generate NH3's
Speed can compare H2O is fast.Due to NH3The condition of supercriticality is 132.4 DEG C/11.28MPa, and object in a supercritical state
Matter is a kind of dense gaseous state, and density ratio general gas flow wants big two orders of magnitude, and close with liquid, viscosity is smaller than liquid,
But diffusion velocity is faster than liquid (about two orders of magnitude), so having preferable mobility and transfer performance.Therefore, described to make
NH3Reaction in a supercritical state, preferably when being bonded to first wafer 110 and second wafer 120
The range of temperature includes 132.4 DEG C~350 DEG C, and the range of reaction pressure includes 11.28MPa~20MPa, so as to reduce gas
Steep size.
As the further embodiment of the embodiment, in the mistake for being bonded first wafer 110 and second wafer 120
Cheng Zhong, in the H that the wafer bonding face 140 generates2The state of O includes one of supercriticality and gaseous state.
Specifically, due to the H2The supercriticality condition of O is 374.1 DEG C/22.06MPa, therefore to further decrease
The size of the bubble can also be by the technique during being bonded first wafer 110 and the second wafer 120
Condition control is in 374.1 DEG C/22.06MPa or more, in order to by the H2O is transformed into supercriticality, but this method need compared with
High reaction temperature and reaction pressure is unfavorable for the control of process conditions, therefore preferably lower to process conditions requirement, can
By the NH3It is changed into the scheme of supercriticality.
As the further embodiment of the embodiment, in the step for being bonded first wafer 110 and second wafer 120
In rapid, further include the steps that tempering.
Specifically, during being bonded first wafer 110 and the second wafer 120, it can also be only in the crystalline substance
The gaseous NH is formed at circle bonding face 1403, then the wafer after bonding is tempered, the tempering step
In process conditions be at least can be by the NH3It is changed into the NH of supercriticality3, or use can be by the gaseous H2O and institute
State NH3It is transformed into supercriticality, in order in the step of being tempered, achieve the purpose that reduce bubble size.
As the further embodiment of the embodiment, the area for the bubble that the wafer bonding face 140 is formed and institute
The ratio range for stating the area in wafer bonding face 140 includes 0.1%~1%.Thus under the premise of process conditions are relatively easy to control,
The size of the bubble at the wafer bonding face 140 is reduced, the quality of the wafer after improving bonding.
As the further embodiment of the embodiment, the wafer bonding method includes being applied to preparation SOI and back-illuminated type
One of CMOS, herein with no restriction.
In conclusion wafer bonding method of the present invention, carries out ammoniated treatment by the silicon oxide layer to wafer, to aoxidize
The surface of silicon layer forms amino dielectric layer, then by amino dielectric layer by wafer bonding, to form super face in wafer bonding face
The ammonia of boundary's state improves product quality to reduce bubble size under conditions of lower reaction temperature and reaction pressure
And yield.So the present invention effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above-described embodiments merely illustrate the principles and effects of the present invention, and is not intended to limit the present invention.It is any ripe
The personage for knowing this technology all without departing from the spirit and scope of the present invention, carries out modifications and changes to above-described embodiment.Cause
This, institute is complete without departing from the spirit and technical ideas disclosed in the present invention by those of ordinary skill in the art such as
At all equivalent modifications or change, should be covered by the claims of the present invention.
Claims (10)
1. a kind of wafer bonding method, which comprises the following steps:
There is provided at least two panels wafer, the surface of the wafer includes silicon oxide layer；
Ammoniated treatment is carried out to the silicon oxide layer of at least a piece of wafer, is situated between with forming amino on the surface of the silicon oxide layer
Matter layer；
By the amino dielectric layer by the wafer bonding, to form the ammonia of supercriticality in the wafer bonding face.
2. wafer bonding method according to claim 1, it is characterised in that: during being bonded the wafer, in institute
Stating wafer bonding face and generating has water, and the state of the water includes one of supercriticality and gaseous state.
3. wafer bonding method according to claim 1, it is characterised in that: the method for forming the silicon oxide layer includes original
One of sublayer sedimentation, chemical vapour deposition technique and in situ synthesis.
4. wafer bonding method according to claim 1, it is characterised in that: the method for the ammoniated treatment includes that magnetic control splashes
Penetrate one of plasma ammoniated treatment, inductively coupled plasma body ammoniated treatment and DPN processing.
5. wafer bonding method according to claim 1, it is characterised in that: form the anti-of the ammonia of the supercriticality
The range for answering temperature includes 132.4 DEG C~350 DEG C, and the range of reaction pressure includes 11.28MPa~20MPa.
6. wafer bonding method according to claim 1, it is characterised in that: in the step of being bonded the wafer, also wrap
The step of including tempering.
7. wafer bonding method according to claim 1, it is characterised in that: include in the step of being bonded the wafer it is equal from
The step of daughter activation processing and cleaning treatment.
8. wafer bonding method according to claim 7, it is characterised in that: the work gas of the plasma-activated processing
Body includes one of nitrogen and oxygen or combination；The step of cleaning treatment used cleaning solution include deionized water,
One of the cleaning solution of cleaning solution and hydrofluoric acid containing containing ammonia.
9. wafer bonding method according to claim 1, it is characterised in that: the face for the bubble that the wafer bonding face is formed
The long-pending ratio range with the area in the wafer bonding face includes 0.1%~1%.
10. any wafer bonding method according to claim 1~9, it is characterised in that: the wafer bonding method packet
It includes and is applied to preparation one of SOI and back-illuminated type CMOS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811185428.2A CN109461695A (en) | 2018-10-11 | 2018-10-11 | A kind of wafer bonding method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811185428.2A CN109461695A (en) | 2018-10-11 | 2018-10-11 | A kind of wafer bonding method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109461695A true CN109461695A (en) | 2019-03-12 |
Family
ID=65607491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811185428.2A Pending CN109461695A (en) | 2018-10-11 | 2018-10-11 | A kind of wafer bonding method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109461695A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025079545A1 (en) * | 2023-10-12 | 2025-04-17 | Ａｇｃ株式会社 | Joining member and joined body |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040152282A1 (en) * | 2000-02-16 | 2004-08-05 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
-
2018
- 2018-10-11 CN CN201811185428.2A patent/CN109461695A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040152282A1 (en) * | 2000-02-16 | 2004-08-05 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025079545A1 (en) * | 2023-10-12 | 2025-04-17 | Ａｇｃ株式会社 | Joining member and joined body |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109411340A (en) | Wafer bonding method | |
| US10748989B2 (en) | Insulating layer structure for semiconductor product, and preparation method of insulating layer structure | |
| US20190344534A1 (en) | Method of room temperature covalent bonding | |
| CN113903656A (en) | A kind of silicon carbide wafer processing technology | |
| CN102664147A (en) | Method for preparing Hf-based high-K gate dielectric film on GaAs substrate | |
| TW202510089A (en) | Selectively etching for nanowires | |
| CN112786448A (en) | Processing technology of IGBT wafer | |
| CN102832160B (en) | A kind of preparation method of SOI silicon chip | |
| CN102403367A (en) | High-mobility MOS (Metal Oxide Semiconductor) capacitor and manufacturing method thereof | |
| CN113363135A (en) | Coating processing method for chip | |
| CN105118804B (en) | The method that ultra-thin silicon thin film passivation prepares germanium on insulator | |
| CN110416363A (en) | A front passivation process matching alkali throw selective emitter | |
| CN109461695A (en) | A kind of wafer bonding method | |
| CN113755816B (en) | Pre-coating method for improving reaction chamber dust and the formed pre-coating film | |
| CN113224141A (en) | Preparation method of hexagonal boron nitride heterojunction and hexagonal boron nitride heterojunction | |
| CN112992767A (en) | Processing technology of compound semiconductor wafer | |
| CN102760657A (en) | Method for preparing high K grating medium film and MIS (Management Information System) capacitor on InP (Indium Phosphide) substrate | |
| CN107785304A (en) | Using nitride film as SOI materials of insulating buried layer and preparation method thereof | |
| CN113278912B (en) | Preparation method of silicon terminal diamond surface | |
| CN116313906A (en) | Preparation method of diamond-based gallium oxide and silicon transistor based on direct bonding | |
| CN114927525A (en) | Ferroelectric memory and preparation method and application thereof | |
| CN105632894B (en) | Method for bonding compound semiconductor and silicon-based semiconductor | |
| CN103137538B (en) | Si/NiSi2 backing material and preparation method thereof on a kind of pattern dielectric body | |
| CN105551941B (en) | A method of improving metal germanide thermal stability | |
| CN102522332B (en) | ONO structure and preparation method thereof, memory and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20190312 |