CN109485262A - TFT substrate thining method - Google Patents
TFT substrate thining method Download PDFInfo
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- CN109485262A CN109485262A CN201710819512.4A CN201710819512A CN109485262A CN 109485262 A CN109485262 A CN 109485262A CN 201710819512 A CN201710819512 A CN 201710819512A CN 109485262 A CN109485262 A CN 109485262A
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- G—PHYSICS
- G06—COMPUTING OR CALCULATING; COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- Human Computer Interaction (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Image Input (AREA)
- Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)
Abstract
The present invention relates to a kind of TFT substrate thining methods, comprising: provides TFT substrate；The glass substrate of the TFT substrate is etched；When judging that the thickness of the TFT substrate reduces to the thickness suitable for ultrasonic fingerprint identification mould group, stop the etching operation.The TFT substrate thining method can reduce the thickness of TFT substrate, to meet the needs of ultrasonic fingerprint identification mould group.
Description
Technical field
The present invention relates to fingerprint identification technology fields, more particularly to a kind of TFT substrate thining method.
Background technique
Ultrasonic fingerprint identification technology is the ability for having penetrable material using ultrasonic wave, and is generated greatly with the different of material
Small different echo (when i.e. ultrasonic wave reaches unlike material surface, the ultrasonic energy that is reflected back toward and after distance it is different)
And carry out fingerprint recognition.Therefore, using skin and air for the difference of sound impedance, so that it may distinguish fingerprint ridge and valley institute
Position.Ultrasonic fingerprint identification technology fingerprint can be carried out deeper into analytical sampling, or even the table that can penetrate to the skin
The unique three-dimensional feature of fingerprint is identified under face.Moreover, because ultrasonic wave has certain penetrability, therefore have on a small quantity in finger
Work is remained in the case where dirt or humidity, the equipment such as glass, aluminium, stainless steel, sapphire can be penetrated and identified.Therefore,
Ultrasonic fingerprint identification technology is increasingly valued by people.
If ultrasonic fingerprint identification mould group will be applied in the equipment (such as mobile phone) of small volume consider ultrasound
Whether the volume of wave fingerprint recognition mould group meets the demand of equipment.Therefore, ultrasonic fingerprint knowledge can be reduced by how providing one kind
The technique of other modular volume is a problem to be solved.
Summary of the invention
Based on this, it is necessary to for how providing a kind of asking for technique that can reduce ultrasonic fingerprint identification modular volume
Topic, provides a kind of TFT substrate thining method.
A kind of TFT substrate thining method, comprising:
TFT substrate is provided；
The glass substrate of the TFT substrate is etched；
When judging that the thickness of the TFT substrate reduces to the thickness suitable for ultrasonic fingerprint identification mould group, stop the erosion
Carve operation.
The step of glass substrate to the TFT substrate is etched in one of the embodiments, are as follows:
The glass substrate of the TFT substrate is etched using chemical substance.Specifically, the chemical substance is hydrogen fluorine
Acid.
Due to being etched using chemical substance, without carrying out the operation such as physical shock to TFT substrate, so as to avoid
The circuit of TFT substrate is damaged.
The glass substrate to the TFT substrate is etched using chemical substance in one of the embodiments,
Step includes:
Layer protecting film is covered in the circuit surface of the TFT substrate；The protective film is for avoiding the circuit by institute
State chemical etches；
The TFT substrate that will be covered with the protective film is placed in the device for filling the chemical substance, so that described
Glass substrate is by the chemical etches；
Also, when judging that the thickness of the TFT substrate reduces to the thickness suitable for ultrasonic fingerprint identification mould group, stop
After the etching operation, the method also includes:
The protective film is removed.Above-mentioned engraving method is easy to operate, and has faster etching speed.
The protective film is UV film in one of the embodiments,.
In one of the embodiments, before the step of circuit surface of the TFT substrate covers layer protecting film, institute
State the step of being etched to the glass substrate of the TFT substrate using chemical substance further include:
One layer of electrostatic paper is pasted in the effective display area domain of the circuit surface of the TFT substrate.It, can be to prevent after sticking electrostatic paper
Only when removal UV film is completed in etching, there is the case where UV film residual.
Described the step of removing the protective film, includes: in one of the embodiments,
Using vacuum platform by after the completion of etching the TFT substrate absorption get up, and make the protective film exposed
Outside；
The protective film is irradiated using ultraviolet light, and removes the protective film after the completion of irradiation.Due to TFT
After substrate is thinned, very thin thickness, therefore adsorbed using vacuum platform, it can occur to avoid TFT substrate broken.
It is placed in one of the embodiments, in the TFT substrate that will be covered with the protective film and fills describedization
In the device for learning substance, so that the glass substrate is by before the step of the chemical etches, it is described to the TFT base
The step of glass substrate of plate is etched using chemical substance further include:
Deaeration processing is carried out to the TFT substrate for being covered with the protective film, to remove the protective film and the TFT substrate
Between bubble.After removing the bubble between protective film and TFT substrate, it is right in etching process to can be further improved protective film
The protective effect of circuit.
Judge that the thickness of the TFT substrate is reduced in one of the embodiments, and identifies mould group suitable for ultrasonic fingerprint
Thickness when, the step of stopping the etching operation includes:
Utilize the thickness of TFT substrate described in dimensional measuring instrument real-time detection；
Judge that the thickness of the TFT substrate is reduced to according to the data that the dimensional measuring instrument measures to refer to suitable for ultrasonic wave
When line identifies the thickness of mould group, stop the etching operation.It can detecte the rate of etching using dimensional measuring instrument, if hair
Existing etch-rate is slower, can also take mode appropriate (such as the concentration for increasing chemical substance) Lai Tigao etch-rate, from
And improve the thinned efficiency of TFT substrate.
In one of the embodiments, judge the thickness of the TFT substrate reduce to suitable for ultrasonic fingerprint identify mould
When the thickness of group, after the step of stopping the etching operation, the method also includes:
The TFT substrate after being thinned is cleaned, to remove the chemicals remained in the TFT substrate
Matter.
In above-mentioned TFT substrate thining method, after TFT substrate is provided, the glass substrate of TFT substrate is etched, from
And it can reduce the thickness of TFT substrate, and reduce to the thickness suitable for ultrasonic fingerprint identification mould group in the thickness for judging TFT substrate
When spending, stop etching operation.Therefore, which can reduce the thickness of TFT substrate, super so as to meet
The demand of sound wave fingerprint recognition mould group.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
The attached drawing of other embodiments is obtained according to these attached drawings.
Fig. 1 is the flow chart for the TFT substrate thining method that an embodiment provides；
Fig. 2 is the flow chart of one of embodiment of the TFT substrate thining method of Fig. 1 illustrated embodiment；
Fig. 3 is the process of one of embodiment of step S500 in the TFT substrate thining method of embodiment illustrated in fig. 2
Figure；
Fig. 4 is the process of one of embodiment of step S300 in the TFT substrate thining method of Fig. 1 illustrated embodiment
Figure.
Specific embodiment
To facilitate the understanding of the present invention, a more comprehensive description of the invention is given in the following sections with reference to the relevant attached drawings.In attached drawing
Give presently preferred embodiments of the present invention.But the invention can be realized in many different forms, however it is not limited to this paper institute
The embodiment of description.On the contrary, purpose of providing these embodiments is keeps the understanding to the disclosure more thorough
Comprehensively.
Unless otherwise defined, the skill of all technical and scientific terms used herein and the technical field for belonging to invention
The normally understood meaning of art personnel is identical.It is specific that description is intended merely in the term used in the description of invention herein
The purpose of embodiment, it is not intended that the limitation present invention.Term as used herein "and/or" includes one or more relevant institutes
Any and all combinations of list of items.
One embodiment provides a kind of TFT substrate thining method, thinned for carrying out to TFT substrate, so that being thinned
TFT substrate afterwards can be applied in ultrasonic fingerprint identification mould group.Wherein, ultrasonic fingerprint identification mould group can utilize ultrasound
Wave scans the fingerprint of user, and identifies to fingerprint.Ultrasonic fingerprint identification mould group generally includes cover board, ultrasonic sensor
And the circuit board being electrically connected with ultrasonic sensor.Cover board is covered at the top of ultrasonic sensor, and the top surface direction of cover board connects
Touch object.Cover board shields, so as to improve the reliability of ultrasonic fingerprint identification mould group.Cover board can be for can be by
Material that ultrasonic wave penetrates, such as glass, ceramics and composite material etc..The top of ultrasonic sensor (connects towards contact object
Touching object is, for example, the finger of user), and ultrasonic sensor can emit ultrasonic wave, and be able to detect ultrasound through reflection
Wave.Ultrasonic sensor is for example including TFT substrate, piezoelectric layer and electrode layer.Wherein, piezoelectric layer is made of piezoelectric material.Electrode
Layer is constructed from a material that be electrically conducting.Piezoelectric layer can produce ultrasound after electrode layer has been applied the high frequency electrical signal from circuit board
Wave, also, piezoelectric layer can also will be converted to electric signal by reflected ultrasonic wave from contact object, and the electric signal is again through thin
Film transistor pel array layer is sent to circuit board after corresponding processing (such as amplification).Circuit board is used to pass to ultrasonic wave
Sensor provides control signal (such as sending high frequency electrical signal to piezoelectric layer), so that ultrasonic sensor can emit ultrasound
Wave.In addition, circuit board may also receive from the electric signal of TFT substrate, to identify to fingerprint.
The TFT substrate thining method that present embodiment provides includes the following contents, please refers to Fig. 1.
Step S100, provides TFT substrate.
TFT substrate includes glass substrate and the circuit that is formed on glass substrate.Circuit is for example including multiple by film
The pixel-driving circuit of transistor composition, multiple data lines, multi-strip scanning line, scan drive circuit, data drive circuit.Its
In, scan drive circuit sends scanning signal to each pixel-driving circuit by scan line.Data drive circuit passes through data line
Data-signal is sent to each pixel-driving circuit.
Step S200 is etched the glass substrate of TFT substrate.
Wherein it is possible to be etched using chemical method to glass substrate.In addition, not in TFT substrate in the step
Circuit is etched operation, to guarantee that TFT substrate can operate normally.Therefore, which passes through the glass substrate to TFT substrate
It is etched, to reduce the thickness of glass substrate, so as to reduce the thickness of entire TFT substrate.
Step S300 stops erosion when judging that the thickness of TFT substrate reduces to the thickness suitable for ultrasonic fingerprint identification mould group
Carve operation.
Specifically, the thickness of the TFT substrate after the completion of being thinned is, for example, 100 μm.It is after step S300, i.e., available
Be thinned after TFT substrate come participate in ultrasonic fingerprint identification mould group manufacture.Such as: it is successively applied in the TFT substrate after being thinned
Piezoelectric layer, electrode layer are covered, so that ultrasonic sensor is formed, until eventually forming entire ultrasonic fingerprint identification mould group.
In conclusion the above-mentioned TFT substrate thining method that present embodiment provides, by the glass base for etching TFT substrate
Plate can will reduce the thickness of TFT substrate, to meet the needs of ultrasonic fingerprint identification mould group.
Above-mentioned steps S200 in one of the embodiments, are as follows: the glass substrate of TFT substrate is carried out using chemical substance
Etching.Such as: the glass substrate of TFT substrate can be contacted with the chemical substance for capableing of etching glass, so that glass base
Plate is corroded.Specifically, chemical substance such as hydrofluoric acid (HF) or other be capable of the chemical substance of etching glass.Due to utilizing
Chemical substance is etched, without carrying out the operation such as physical shock to TFT substrate, so as to avoid the circuit to TFT substrate
It damages.
Specifically, above-mentioned steps S200 specifically includes the following contents, please refers to Fig. 2.
Step S220 covers layer protecting film in the circuit surface of TFT substrate.The protective film is used to avoid circuit chemical
Material etch.
Wherein, layer protecting film is covered in the circuit surface of TFT substrate, in other words, protective film at least will be in TFT substrate
Circuit part all covers, so as to avoid circuit from directly contacting chemical substance.
Specifically, protective film is, for example, UV (Ultraviolet Rays, ultraviolet light) film.UV film is irradiating it by UV light
Before, viscosity is very big, but after by the irradiation of UV light, viscosity can be reduced.
Step S240, the TFT substrate that will be covered with protective film is placed in the device for filling chemical substance, so that TFT
The glass substrate of substrate is by chemical etches.
In the step, will be covered with protective film TFT substrate be placed in the device for fill chemical substance after, glass substrate
I.e. can be with chemical reaction, so that glass substrate is etched, and the circuit in TFT substrate is due to being covered with protective film,
Therefore it will not be contacted with chemical substance.When glass substrate is etched certain thickness, so that the thickness of entire TFT substrate may be used
After meeting the needs of ultrasonic fingerprint identification mould group, etching process can terminate, at this moment can be by TFT substrate from above-mentioned apparatus
Middle taking-up.Therefore, above-mentioned engraving method is easy to operate, and has faster etching speed.
Specifically, the TFT substrate that can will be covered with protective film with carrier is placed in the device for filling chemical substance.Phase
Ying Di is equally taken out the TFT substrate after etching with the carrier after etching from device.Optionally, carrier
Manufacture material can be the anti-corrosion material such as Teflon material or PVC (Polyvinyl chloride, polyvinyl chloride).
It further, further include the following contents after step S300 in above-mentioned TFT substrate thining method, continuing with
With reference to Fig. 2:
Step S500, protective film is removed.
After TFT substrate is thinned, then TFT substrate is taken out, and protective film is removed from above-mentioned apparatus, at this moment should
TFT substrate is that can be applied in the manufacturing process of ultrasonic fingerprint identification mould group.
It is understood that the specific implementation of step S200 is not limited to above situation, as long as can to glass substrate
It is etched, such as: TFT substrate can not also be placed in the device for filling chemical substance, but pass through mechanical dress
It sets and raises TFT substrate, and the glass substrate of TFT substrate is located below, then the device for filling chemical substance is placed
Control glass substrate is contacted with chemical substance to be etched below glass substrate, and only.In this case, due to TFT base
Circuit on plate will not be contacted with chemical substance, therefore just no longer need to covering protection film.
Further, under the premise of protective film is UV film, in the concrete methods of realizing of above-mentioned steps S200, in step
It is further comprising the steps of before S220, please continue to refer to Fig. 2.
Step S210 pastes one layer of electrostatic paper in the effective display area domain of the circuit surface of TFT substrate.Also, in above-mentioned step
After the completion of rapid S220 is executed, electrostatic paper is between TFT substrate and protective film.
Wherein, the region effective display area domain, that is, AA (Ative Area).It is understood that at least effective in the step
Paste electrostatic paper in display area, it is meant that electrostatic paper only can be pasted in effective display area domain, it can also be in the entire circuit of TFT substrate
All paste one layer of electrostatic paper in surface.After sticking electrostatic paper, it can prevent the remaining feelings of UV film occur when removal UV film is completed in etching
Condition.
In addition, during executing step S220, in the top covering protection film of electrostatic paper, also, if TFT substrate
Circuit surface in addition to not pasting electrostatic paper in other regions of effective display area domain, then directly in these region coating protective films.
It is understood that the case where other modes can also be taken to remain when avoiding removal UV film.
Specifically, under the premise of protective film is UV film, the specific implementation of above-mentioned steps S500 includes the following contents,
Please refer to Fig. 3.
Step S510, using vacuum platform by after the completion of etching TFT substrate absorption get up, and make protective film exposed
Outside.
Wherein, vacuum platform directly connects with the facet (glass substrate after being etched) that is eclipsed of TFT substrate in absorption
Touching so that the UV film opposite with glass substrate be located below and it is exposed outside.It is thick after being thinned due to TFT substrate
Degree is very thin, therefore is adsorbed using vacuum platform, can occur to avoid TFT substrate broken.
Step S520 is irradiated protective film using ultraviolet light, and removes protective film after the completion of irradiation.
After being executed due to step S510, UV film be located below and it is exposed outside, therefore, can be in order to shining UV film
It penetrates.After UV film is irradiated with ultraviolet radiation, viscosity can be reduced, consequently facilitating UV film is removed from TFT substrate.
It is understood that the specific implementation of above-mentioned steps S500 is not limited to above situation, for example, if protective film
When using other kinds of material, then select corresponding mode appropriate after the etch is completed by protective film according to the property of the material
Removal.
Further, in the specific implementation of above-mentioned steps S200, further include the following contents before step S240, ask
With continued reference to Fig. 2.
Step S230 carries out deaeration processing to the TFT substrate for being covered with protective film, with remove protective film and TFT substrate it
Between bubble.
After removing the bubble between protective film and TFT substrate, protective film can be further improved in etching process to electricity
The protective effect on road.Specifically, it can use the mode of low temperature pressurization deaeration to take off to the TFT substrate for being covered with protective film
Bubble processing.
Specifically, the specific implementation of above-mentioned steps S300 may include the following contents, please refer to Fig. 4.
Step S310 utilizes the thickness of dimensional measuring instrument real-time detection TFT substrate.
Wherein, dimensional measuring instrument is, for example, micrometer caliper.It can detecte the rate of etching using dimensional measuring instrument.
If it find that etch-rate is slower, mode appropriate (such as the concentration for increasing chemical substance) can also be taken to improve etching speed
Rate, to improve the thinned efficiency of TFT substrate.
Step S320 judges that the thickness of TFT substrate is reduced to suitable for ultrasonic wave according to the data that dimensional measuring instrument measures
When the thickness of fingerprint recognition mould group, stop etching operation.
It is understood that the specific implementation of step S300 is not limited to above situation, for example, if known chemicals
The etch-rate of confrontation glass substrate can then be suitable for ultrasonic fingerprint identification mould group according to etch-rate and TFT substrate
Etching period needed for thickness gauge calculates, is at this moment not necessarily to the thickness of real-time detection TFT substrate in etching process, and need to only count in real time
The time of etching process experience is calculated, once the time of etching process experience reaches above-mentioned required etching period, can be stopped etching
Operation, the same meet demand of thickness of the TFT substrate after the completion of at this moment etching.
It further, further include the following contents after step S300 in the above method, please continue to refer to Fig. 2:
Step S400 cleans the TFT substrate after being thinned, to remove the chemical substance of residual on the tft substrate.
Specifically, it can use carrier the TFT substrate after being thinned is placed in cleaning room, chemistry will be washed
The substance splash of substance on the tft substrate, to wash residual chemical substance on the tft substrate.Such as: if chemical substance
For hydrofluoric acid, then can be cleaned with water.
Further, after the completion of step S400 is executed, it can also examine whether chemical substance penetrates into protective film.Such as
Fruit chemical substance is hydrofluoric acid, can use PH test paper and tests.
It is understood that Fig. 2 illustrates only a kind of TFT substrate thining method of embodiment, but side is thinned in TFT substrate
The specific implementation of method is not limited to a kind of this situation, between above-mentioned each step can also there are many combinations, such as: should
TFT substrate thining method may include step S100, step S210, step S220, step S240, step S300, step S400,
Step S500；Or including step S100, step S210, step S220, step S240, step S300, step S500；Or packet
Include step S100, step S220, step S230, step S240, step S300, step S400, step S500；Or including step
S100, step S220, step S230, step S240, step S300, step S500；Or including S100, step S200, step
S300, step S400 etc..
Each technical characteristic of embodiment described above can be combined arbitrarily, for simplicity of description, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, all should be considered as described in this specification.
The embodiments described above only express several embodiments of the present invention, and the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Range.Therefore, the scope of protection of the patent of the invention shall be subject to the appended claims.
Claims (10)
1. a kind of TFT substrate thining method, comprising:
TFT substrate is provided；
The glass substrate of the TFT substrate is etched；
When judging that the thickness of the TFT substrate reduces to the thickness suitable for ultrasonic fingerprint identification mould group, stop the etching behaviour
Make.
2. the method according to claim 1, wherein the glass substrate to the TFT substrate is etched
The step of are as follows:
The glass substrate of the TFT substrate is etched using chemical substance.
3. according to the method described in claim 2, it is characterized in that, the chemical substance is hydrofluoric acid.
4. according to the method described in claim 2, it is characterized in that, the glass substrate to the TFT substrate utilizes chemistry
The step of substance is etched include:
Layer protecting film is covered in the circuit surface of the TFT substrate；The protective film is for avoiding the circuit by describedization
Learn material etch；
The TFT substrate that will be covered with the protective film is placed in the device for filling the chemical substance, so that the glass
Substrate is by the chemical etches；
Also, when judging that the thickness of the TFT substrate reduces to the thickness suitable for ultrasonic fingerprint identification mould group, described in stopping
After etching operation, the method also includes:
The protective film is removed.
5. according to the method described in claim 4, it is characterized in that, the protective film is UV film.
6. according to the method described in claim 5, it is characterized in that, the circuit surface in the TFT substrate covers one layer of protection
Before the step of film, the step of glass substrate to the TFT substrate is etched using chemical substance further include:
One layer of electrostatic paper is pasted in the effective display area domain of the circuit surface of the TFT substrate.
7. according to the method described in claim 5, it is characterized in that, it is described by the protective film remove the step of include:
The TFT substrate absorption after the completion of etching is got up using vacuum platform, and makes the protective film exposed outside；
The protective film is irradiated using ultraviolet light, and removes the protective film after the completion of irradiation.
8. according to method described in any one of claim 4 to 7 claim, which is characterized in that will be covered with institute described
The TFT substrate for stating protective film is placed in the device for filling the chemical substance, so that the glass substrate is by the chemistry
Before the step of material etch, the step of glass substrate to the TFT substrate is etched using chemical substance, is also wrapped
It includes:
Deaeration processing is carried out to the TFT substrate for being covered with the protective film, to remove between the protective film and the TFT substrate
Bubble.
9. according to claim 1 to method described in any one of 7 claims, which is characterized in that judge the TFT substrate
When thickness reduces to the thickness suitable for ultrasonic fingerprint identification mould group, the step of stopping the etching operation, includes:
Utilize the thickness of TFT substrate described in dimensional measuring instrument real-time detection；
Judge that the thickness of the TFT substrate is reduced to according to the data that the dimensional measuring instrument measures to know suitable for ultrasonic fingerprint
When the thickness of other mould group, stop the etching operation.
10. according to method described in any one of claim 2 to 7 claim, which is characterized in that judging the TFT base
It is described after the step of stopping the etching operation when thickness of plate reduces to the thickness suitable for ultrasonic fingerprint identification mould group
Method further include:
The TFT substrate after being thinned is cleaned, to remove the chemical substance remained in the TFT substrate.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113336447A (en) * | 2021-06-24 | 2021-09-03 | 重庆永信科技有限公司 | Single-side thinning method for ultrathin glass |
| CN114292030A (en) * | 2021-12-29 | 2022-04-08 | 武汉创维光显电子有限公司 | Glass substrate thinning method, glass panel and electronic equipment |
| CN115784625A (en) * | 2022-12-01 | 2023-03-14 | 业泓科技(成都)有限公司 | Thinning method of fingerprint identification module |
| TWI800452B (en) * | 2022-08-22 | 2023-04-21 | 大陸商業泓科技（成都）有限公司 | Ultrasonic fingerprint identification module |
| CN116854379A (en) * | 2023-06-05 | 2023-10-10 | 广东绿展科技有限公司 | A method for thinning glass-based fingerprint chips |
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