CN109690416A - Dense Line EUV Lithography System with Distortion Matching - Google Patents
Dense Line EUV Lithography System with Distortion Matching Download PDFInfo
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- CN109690416A CN109690416A CN201780037914.7A CN201780037914A CN109690416A CN 109690416 A CN109690416 A CN 109690416A CN 201780037914 A CN201780037914 A CN 201780037914A CN 109690416 A CN109690416 A CN 109690416A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
- G03F7/70725—Stages control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
An extreme ultraviolet lithography system (10) for producing a new pattern (330) having a plurality of densely packed parallel lines (332) on a workpiece (22), the system (10) comprising: a patterning element (16); an EUV illumination system (12) that directs an extreme ultraviolet beam (13B) at the patterning element (16); a projection optics assembly (18) that directs the extreme ultraviolet light beam diffracted from the patterning element (16) at the workpiece (22) to produce a first strip (364) of substantially parallel lines (332) during a first scan (365); and a control system (24). The workpiece (22) includes a distorted existing pattern (233). The control system (24) selectively adjusts control parameters during the first scan (365) such that the first strip (364) distorts to more accurately cover the portion of the patterned underlying the first strip (364).
Description
Cross reference to related applications
This application claims following U.S. Provisional Patent Applications: on June 20th, 2016 is submitting and entitled
“Dense Line Extreme Ultraviolet Lithography System with Distortion Matching”
Sequence number 62/352,545 U.S. Provisional Patent Application；On June 22nd, 2016 " Extreme submit and entitled
The sequence number 62/ of Ultraviolet Lithography System that Utilizes Pattern Stitching "
353,245 U.S. Provisional Patent Application；And on May 11st, 2017 is submitting and inscribes one's name " Illumination System
The sequence number 62/504,908 of with Curved 1D-Patterned Mask for Use in EUV-Exposure Tool "
Each of U.S. Provisional Patent Application priority.As for license, sequence number 62/352,545, sequence number 62/353,
245 and the content of U.S. Provisional Patent Application of sequence number 62/504,908 be all incorporated by reference into this for all purposes
Wen Zhong.
" EUV Lithography System submitting and entitled on May 18th, 2017 is also claimed in the application
The priority of the U.S. Patent application No.15/599,148 of for Dense Line Patterning ".In addition, the application also wants
Seek protection " EUV Lithography System for Dense Line submitting and entitled on May 18th, 2017
The priority of the U.S. Patent application No.15/599,197 of Patterning ".As for license, U.S. Patent application No.15/
The content of 599,148 and U.S. Patent application No.15/599,197 is all incorporated by reference into herein for all purposes.
As for license, U.S. Provisional Patent Application: on May 19th, 2016 " EUV submit and entitled
The US provisional patent of the sequence number 62/338,893 of Lithography System for Dense Line Patterning "
Application；On April 19th, 2017 " Optical Objective for Dense Line submitting and entitled
The U.S. Provisional Patent Application of the sequence number 62/487,245 of Patterning in EUV Spectral Region "；And
On April 26th, 2017 " Illumination System With Flat I D-Patterned submitting and entitled
The content of the U.S. Provisional Patent Application of the sequence number 62/490,313 of Mask for Use in EUV-Exposure Tool "
It is all incorporated by reference into for all purposes herein.
Technical field
The present invention relates to exposure (exposure) tools used in the photoetching process in semiconductor workpiece, more specifically,
It is related to being configured to forming the exposure tool being separated from each other up to tens nanometers or smaller pattern of parallel lines on workpiece.
Background technique
Lithography system is normally used for turning image from patterned element (patterning element) during exposure
It moves on on workpiece.Extreme ultraviolet (EUV) photoetching technique can be used to make it possible to manufacture and have minimum spy in Next Generation Lithography
Levy the semiconductor workpiece of size.
Summary of the invention
One embodiment about a kind of extreme ultraviolet lithography system, include distortion figuratum workpiece (for example,
Semiconductor wafer) on generate have it is a plurality of it is intensive filling parallel lines new pattern.The lithography system includes having patterning member
The patterned element of part pattern；The mobile device assembly of work stage of the workpiece is kept and moved relative to the patterned element；
EUV irradiation system extreme ultraviolet light beam (for example, light of the wavelength with about 13.5nm) being directed at the patterned element
System；Projection optics, the Projection optics will be directed to institute from the extreme ultraviolet light beam of the patterned element diffraction
It states at workpiece, to generate the first band of intensive filling parallel lines, the intensive filling parallel lines substantially edge on the workpiece
First axle extend；And control system, the control system control described component during first scanning along substantially
The first scanning track of the first axle is parallel to relative to the mobile workpiece of the exposure field.As herein provided, institute
It states control system and is selectively adjusted control parameter during first scanning, so that relative to the control parameter is not adjusted
The case where, first band of parallel lines more accurately covers figuratum first leukorrhagia positioned at parallel lines
Part.
In one embodiment, the control parameter includes during first scanning by first scanning track
Be selectively adjusted into includes moving along a part of the second axis perpendicular to the first axle and around perpendicular to described
A part of the third axis of one axis and second axis is mobile, has so that first band of parallel lines more accurately covers
The part of first leukorrhagia positioned at parallel lines of pattern.It is described first scanning during, along second axis and around
The movement of the third axis is the function of the described location of workpiece along the first axle.
Addition or alternatively, the control parameter may include being selectively adjusted the figure during first scanning
The magnifying power (magnification) of case element pattern image, so that first band of parallel lines more accurately covers
The part of figuratum first leukorrhagia positioned at parallel lines.In addition, the control parameter may include described
The magnifying power inclination (magnification tilt) of the patterned element pattern image is selectively adjusted during one scanning
(that is, linear change of the magnifying power across the exposure field) has so that first band of parallel lines more suitably covers
The part of first leukorrhagia positioned at parallel lines of pattern.
In one embodiment, the existing pattern includes that multiple crystal grain (die) being previously patterned (also referred to expose
Light " diapason (shot) " or " field ", because each diapason can include more than one pattern or semiconductor devices), and institute
It states control system and controls the EUV illumination system, so that along the every of first scanning track during first scanning
It is not exposed every a crystal grain.Then, the control system can control the EUV illumination system, second scanning during along
First scanning track is exposed unexposed crystal grain.
In another embodiment, the control system controls the EUV illumination system in the interface of neighboring die
Place stops described first and scans and reset first scanning track.
As herein provided, the control system adjusts described first to the property of can choose during first scanning
The spacing of scanning track and the parallel lines for being transferred to the workpiece, so that first band of parallel lines is distorted into more
Accurately cover the part of figuratum first leukorrhagia positioned at parallel lines.
Another embodiment is in relation to a kind of for will have the new pattern of a plurality of intensive filling line to be transferred to including distortion
Method on figuratum workpiece.The method may include following steps: (i) provides the figure with patterned element pattern
Case element；(ii) the mobile workpiece of the mobile device assembly of work stage is utilized；Extreme ultraviolet light beam is guided using EUV illumination system
To at the patterned element；It (iii) will be from the extreme ultraviolet of the patterned element diffraction using Projection optics
Beam is directed at the workpiece, with when the workpiece is mobile relative to exposure field during the first scanning, on the workpiece
The a plurality of intensive filling parallel lines are generated, first band of parallel lines extends approximately along first axle；And (iv) exists
The work stage component is controlled using control system during first scanning, with along being roughly parallel to the of the first axle
One scanning track is relative to the mobile workpiece of the exposure field；The control system includes processor；Wherein, the control system
System is selectively adjusted control parameter during first scanning, so that first band of parallel lines more accurately covers
The part of figuratum first leukorrhagia positioned at parallel lines.
Embodiment is about the device using lithography system manufacture and/or has passed through the lithography system above
It is formed with the workpiece (for example, semiconductor wafer) of image.
Detailed description of the invention
Novel feature of the invention and invention itself, will be from the attached drawing for combining appended description about its structure and its operation
In be best understood, wherein similar reference label refers to similar component, and wherein:
Figure 1A is to illustrate the rough schematic view of the extreme ultraviolet lithography system of the feature with present embodiment；
Figure 1B is the simplified side view of the optical shutter component (shutter assembly) of the feature with present embodiment；
Fig. 2A is to have been machined on the simplification top view including figuratum workpiece；
Fig. 2 B is the workpiece illustrated for using stepping and repetition lithography system or stepping and scanning lithography system processing
The simplification figure of original width distortion data；
Fig. 2 C is only to illustrate the simplification figure of the global distortion data of the workpiece；
Fig. 2 D is to illustrate the simplification figure of the distortion data of each crystal grain of workpiece；
Fig. 2 E includes illustrating the figure of the common distortion shape of crystal grain；
Fig. 2 F includes illustrating the figure of residual distortion data；
Fig. 3 A is to illustrate the flow chart of the process of the feature with present embodiment；
Fig. 3 B be include parallel lines the first band workpiece simplification top view；
Fig. 3 C be include parallel lines the first band and parallel lines second strip workpiece simplification top view；
Fig. 3 D is the simplification top view for projecting a part of the patterned element pattern on workpiece；
Fig. 3 E is the simplification top view for projecting another part of the patterned element pattern on workpiece；
Fig. 3 F is the simplification top view of a part of workpiece, wherein a part of new pattern covers existing pattern；
Fig. 4 A is the simplification top view with the workpiece of the first part of the first band of parallel lines；
Fig. 4 B is the simplification top view with the workpiece of the second part of the first band of parallel lines；
Fig. 4 C is the simplification top view of another first band of workpiece and parallel lines；
Fig. 5 A is the flow chart for summarizing the process for manufacturing device according to the present embodiment；And
Fig. 5 B is the flow chart for summarizing device processing in more detail.
Specific embodiment
Figure 1A is to illustrate the non-proprietary schematic diagram of simplification of extreme ultraviolet (EUV) lithography system 10, extreme ultraviolet (EUV) the photoetching system
System 10 includes: the EUV illumination system 12 (irradiation devices) for generating initial EUV light beam 13A (being shown in broken lines), keeps having pattern
Change the patterned element platform component 14 of the patterned element 16 of element pattern 16A, Projection optics 18, keep and position workpiece
The control system 24 and light of the operation of the work stage component 20, the component of control system 10 of 22 (it can be semiconductor wafer)
Gate assembly 26, the optical shutter component 26 limit the exposure field generated using EUV light beam 13D, 13E of shaping and diffraction on workpiece 22
28 shape.The design of these components and position can change according to introduction provided in this article.
Additionally, it is to be noted that EUV lithography system 10 is generally included than more components shown in Figure 1A.For example, EUV light
Etching system 10 may include the rigid mount frame (not shown) for keeping one or more components of system.In addition, EUV
Lithography system 10 may include one or more temperature control system (not shown), and one of control EUV lithography system 10
Or more component temperature.For example, EUV illumination system 12, patterned element 16, Projection optics 18 and/or work stage
Component 20 may need to be cooled down using temperature control system.
In addition, for example, EUV system 10 may include sealing chamber 29, enable many components of EUV lithography system 10
The operation in controlled environment (such as, vacuum).
As general introduction, exposure field 28 is directed to along the workpiece 22 that positive edge scanning track is moved by EUV lithography system 10, will
It has included having figure that only the new pattern 330 (shown in Fig. 3 B) including a plurality of substantially parallel line 332 intensively filled, which is transferred to,
On the semiconductor workpiece 22 of case 233 (shown in Fig. 2A).In some embodiments, EUV lithography system 10 to workpiece 22 into
One or more control parameters are adjusted while row scanning and exposure, such as, the scanning track of workpiece 22, patterned element figure
The magnifying power of the image of the magnifying power and/or patterned element pattern 16A of the image of case 16A tilts, so that new pattern 233 follows
And than more closely covering existing pattern 233 in the case where not adjusting one or more control parameters.Therefore, in a reality
It applies in mode, present embodiment creates the faulty new pattern 330 for the substantially parallel line intensively filled, preferably to match
And better cover the existing pattern 233 of distortion.In addition, in some embodiments, can control EUV lithography system 10 with edge
Scanning track discontinuity point is generated between neighboring die.More specifically, can control EUV lithography system 10 in workpiece 22
Each band of upper scanning parallel lines twice, makes in the first pass every a die exposure, and in passing through for the second time
Make alternate die exposure.
In short, EUV lithography system 10 is uniquely designed into, while workpiece 22 is scanned and is exposed, pass through
The scanning track of patterned element pattern 16A, magnifying power and " magnifying power inclination " are adjusted, makes the new pattern 330 of line more accurately
The existing pattern 233 of ground matching and the distortion on coating workpieces 22.Because workpiece distortion and how to create existing pattern 233
The characteristic of layer, so existing pattern is usually to distort.Using present embodiment, new patterned element pattern 330 is printed
At by it is closer it is matched in a manner of distort.
Some orientation systems including specifying orthogonal X-axis, Y-axis and Z axis in figures provided herein.?
In these figures, Z axis is vertically oriented.It should be appreciated that the orientation system is only for reference, and can change.For example, X-axis
It can switch and/or can rotate EUV lithography system 10 with Y-axis.In addition, these axis can be alternatively referred as first axle, second
Axis or third axis.For example, Y-axis can be referred to as first axle, X-axis can be referred to as the second axis, and Z axis can be referred to as third axis.
EUV illumination system 12 includes EUV irradiation source 34 and irradiation optical module 36.EUV irradiation source 34 emits initial EUV light
Beam 13A, and irradiate the guidance of optical module 36 and adjust the EUV light beam 13A from irradiation source 34, patterning is directed to provide
Element 16 through adjust EUV light beam 13C.In figure 1A, EUV illumination system 12 includes single EUV irradiation source 34 and single irradiation
Optical module 36.Alternatively, EUV illumination system 12 can be designed to include multiple EUV irradiation sources 34 and multiple irradiation optics
Component 36.
As herein provided, EUV light beam 13A of the transmitting of EUV irradiation source 34 in EUV spectral region.Such as this paper institute
It provides, " EUV spectral region " should mean and including the wavelength between about 5 nanometers to 15 nanometers, and preferably about
In 13.5 nanometers of narrowband.As non-exclusive example, EUV irradiation source 34 can be plasma system, such as, laser generates etc.
Gas ions (LPP) or electric discharge generate plasma (DPP).
It is reflexive for irradiating optical module 36, and one or more including that can work in EUV spectral region
Optical element.More specifically, each optical element includes working surface, which is coated to reflection EUV spectrum model
Enclose interior light.In addition, these optical elements are separated from each other.
In figure 1A, irradiation optical module 36 include: the first irradiation optical element 38, second irradiation optical element 40 and
Third irradiates optical element 42, they cooperate to adjust initial EUV light beam 13A and will be adjusted EUV light beam 13C and be directed to pattern
Change at element 16.In one embodiment, the first irradiation optical element 38 is fly's eye type reflector comprising with two-dimensional array
Multiple independent micro-reflectors (micro mirror (micro-mirror) or facet (facet)) of arrangement, wherein each reflector includes
Working surface, the working surface are coated to the light in reflection EUV spectral region.Similarly, the second irradiation optical element 40 is
Fly's eye type reflector comprising with multiple independent micro-reflectors (micro mirror or facet) of two-dimensional array, wherein each reflection
Device all includes working surface, which is coated to the light in reflection EUV spectral region.In addition, third irradiation optics member
Part 42 is reflector comprising working surface, the working surface are coated to the light in reflection EUV spectral region.In certain realities
It applies in mode, irradiation optical element 38,40,42 includes the curved surface for focusing EUV light.
In figure 1A, initial EUV light beam 13A is emitted to the first irradiation optical element 38 by EUV irradiation source 34 generally downward.
EUV light beam is reflected generally upwards and is re-directed to the second irradiation optics by multiple micro-reflectors of the first irradiation optical element 38
At element 40.Some similarly, EUV light beam is reflected generally downward and lays equal stress on by multiple micro-reflectors of the second irradiation optical element 40
It is newly directed at third irradiation optical element 42.Next, third irradiation optical element 42 serves as collection through adjusting EUV light beam
13C, reflection are adjusted EUV light beam 13C and will be adjusted EUV light beam 13C equably focuses on patterned element 16 generally upwards
Patterned element surface 16A on repeater.It should be noted that the facet mirror surface of the first irradiation optical element 38 is in the second irradiation
Each facet mirror of optical element 40 forms the image of EUV irradiation source 34.In response, second irradiates optical element 40
The homogeneous image of first irradiation optical element 38 is reflected into patterned element via third irradiation optical element 42 by facet mirror surface
On 16.In the illustrated embodiment, the intermediate image of the first irradiation optical element 38 is formed on irradiation optical element 40 and shines
It penetrates at the intermediate image plane 56 between optical element 42.In other words, each facet of the second irradiation optical element 40 and EUV
42 optical conjugate of source 34 and third illumination elements, and first irradiation optical element 38 each facet and intermediate image plane 56 and
16 optical conjugate of patterned element.For the arrangement, the image of each reflector surface of the first irradiation optical element 38
Field is all covered at patterned element 16, to form sufficiently uniform irradiation pattern on patterned element 16.
14 holding pattern element 16 of patterned element platform component.In some embodiments, patterned element platform component
14 can be designed to be finely adjusted the position of patterned element 16 and/or shape, to improve the imaging of EUV lithography system 10
Performance.For example, in some embodiments, patterned element platform component 14 can carry out shaping, positioning to patterned element 16
And/or movement is changed and is adjusted with the magnifying power to exposure field 28, and changes the magnifying power inclination of exposure field 28.One
In a non-exclusive example, patterned element platform component 14 may include that patterned element platform 14A and patterned element rack are mobile
Device 14B.In non-proprietary embodiment shown in figure 1A, patterned element platform 14A is whole and including holding pattern
The patterned element retainer (not shown) of element 16.For example, patterned element retainer can be electrostatic chuck
(electrostatic chuck) or a part of other types of fixture.
Patterned element platform shifter 14B control and the position for adjusting patterned element platform 14A and patterned element 16.Example
Such as, patterned element platform shifter 14B can be with six-freedom degree (for example, along X-axis, Y-axis and Z axis, and around X-axis, Y-axis
And Z axis) mobile and registration pattern element 16.Alternatively, patterned element platform shifter 14B can be designed to make to pattern
Element 16 is with mobile less than six-freedom degree mobile (for example, with three degree of freedom).In addition, in some embodiments, pattern
Changing element platform shifter 14B and/or patterned element retainer can be controlled by control system 24, as desired by drawing
Patterned element 16 is stretched, is bent or compressed to make patterned element 16 distort.As herein provided, patterned element platform is mobile
Device 14B may include one or more piezoelectric actuators, planar motor, linear electric machine, voice coil motor, only attract actuator
And/or other types of actuator.In some embodiments, the motion range of patterned element platform 14A is relatively small.
Patterned element 16 makes to be adjusted EUV light beam 13C diffraction to generate the image projected on workpiece 22.For example, figure
Case element 16 can be diffraction grating.In one embodiment, the patterned element pattern 16A of patterned element 16 includes
Periodic structure, the periodic structure make to be adjusted EUV light beam 13C along multiple directions reflection and diffraction (including along different directions
The the first diffraction EUV light beam 13D and the second diffraction EUV light beam 13E to advance far from patterned element 16).In an embodiment
In, the periodic structure of patterned element 16 includes the pattern for being parallel to the parallel lines of Y-axis.In alternative embodiment, pattern
Changing element 16 can be the periodic structure of the phase and/or intensity that change EUV light beam 13C.For example, periodic structure can be
The pattern of reflection and non-reflective line in appropriate spacing, to generate desired diffracted beam.Alternatively, periodic structure can
To be the line pattern for changing the optical phase of EUV light, to generate desired diffracted beam.
Projection optics 18 guide diffraction EUV light beam 13D, 13E, are formed at will be patterned into the image of element 16
Photosensitive photo anti-corrosion agent material (light- on semiconductor workpiece 22 at the plane of delineation of Projection optics 18
Sensitive photoresist material) on.In one embodiment, Projection optics 18 be it is reflexive and
And one or more optical elements including that can work in EUV spectral region.More specifically, each optical element component
Including working surface, which is coated to the light in reflection EUV spectral region.In addition, these optical elements are to each other
It separates.
In figure 1A, Projection optics 18 are by the EUV light reflected from patterned element 16 (including the first diffraction EUV light
Beam 13D and the second diffraction EUV light beam 13E) it is directed at workpiece 22.In other words, using present embodiment, from patterned element
16 diffraction or the light wave of scattering are projected optical module 18 and collect and reconfigure to generate patterned element 16 on workpiece 22
Image.Because scattering/diffraction EUV light beam patterned element 16 is imaged on workpiece 22, edge is in workpiece 22
Clearly boundary is rendered as in resist.Therefore, the remarkable advantage of projection optical system 18 first is that its allow exposure field 28 have
There is the edge clearly limited.In figure 1A, Projection optics 18 include the first projection sub-component 44 and the second projection sub-component
46, they cooperate to form the image of patterned element pattern on workpiece 22.In contrast, if projection optical system 18 only
Guide two diffraction EUV light beam 13D, 13E to form interference figure on workpiece 22, then edge will appear as out-focus and mould
Paste.
For example, (i) the first projection sub-component 44 may include that the first projection optics 44A of left side and right side first project
Optical element 44B, they cooperate to guide reflection EUV light；It may include that left side second is thrown that (ii) second, which projects sub-component 46,
Shadow optical element 46A and right side the second projection optics 46B, they cooperate to guide reflection EUV light.In an embodiment
In, each first projection optics 44A, 44B are the reflectors for including working surface, which is coated to reflect
Light in EUV spectral region.Similarly, each second projection optics 46A, 46B are the reflectors for including working surface, should
Working surface is coated to the light in reflection EUV spectral region.In some embodiments, optical element 44A, 44B is formed
For the part of single EUV mirror.Similarly, optical component 46A, 46B can be formed as the part of single EUV mirror.It is specific according to this
Using, optical element 44A, 44B can be single curved mirror two parts or they can be individual component.It is similar
Ground, optical element 46A, 46B can be single curved mirror two parts or they can be individual component.
Work stage component 20 keeps workpiece 22, workpiece 22 is positioned and moved relative to exposure field 28, to generate parallel lines
Pattern 330, which is densely packed on workpiece 22.As a non-exclusive example, work stage component 20 can be with
Including work stage 48 and work stage shifter 50 (being illustrated as frame).
In non-proprietary embodiment shown in figure 1A, work stage 48 is whole and the workpiece including keeping workpiece 22
Retainer (not shown).For example, Workpiece Holders can be electrostatic chuck or a part of other types of fixture.
The control of work stage shifter 50 and adjusting work stage 48 and workpiece 22 are relative to exposure field 28 and EUV lithography system 10
Rest part position.For example, work stage shifter 50 can with six-freedom degree (for example, along X-axis, Y-axis and Z axis, with
And and around X-axis, Y-axis and and Z axis) mobile and positioning workpiece 22.Alternatively, work stage shifter 50 can be designed to make workpiece
22 with mobile (for example, mobile with three degree of freedom) less than six-freedom degree.As herein provided, work stage shifter 50 can
To include one or more planar motors, linear electric machine, voice coil motor, only attract actuator and/or other types of actuating
Device.
In some embodiments, scanning speed can change according to the size of exposure field 28.In addition, in certain implementations
In mode, travelling workpiece 22 with substantially constant velocity during each scanning process of work stage shifter 50.
Control system 24 (i) is electrically connected to work stage component 20 and guides and control the electric current to work stage component 20 to control
The position of workpiece 22 processed；(ii) it is electrically connected to patterned element platform component 14 and guides and control to patterned element platform component 14
Electric current, to control position and/or the shape of patterned element 16；(iii) it is electrically connected to EUV illumination system 12 and guides and control
EUV illumination system 12 processed, to control EUV light beam 13；And (iv) is electrically connected to optical shutter component 26 and guides and control optical gate group
Part 26, to adjust the shape of exposure field 28.Control system 24 may include that one or more processors 54 and electronic data are deposited
Reservoir.
For optical shutter component 26 in the exclusive example of the proprietary example of EUV light, optical shutter component 26 carries out shaping to EUV light beam, so that exposing
Light field 28 has rectangular shape.
Figure 1B is the simplified side view of the non-exclusive example of optical shutter component 26.In this embodiment, optical shutter component 26 is wrapped
Include rigid shield shell 26A, which defines opening in shell 26B (being shown in broken lines), removable shield 26C (being shown with frame) and
Shield shifter 26D (being shown with frame).In this embodiment, opening in shell 26B generally define exposure field 28 shape and
Size (as shown in Figure 1A).However, in this embodiment, move shield 26C can by shield shifter 26D relative to
Opening in shell 26B is selectively moved, selectively to cover a part, covering all or not cover opening in shell 26B, with edge
The size of Y-axis adjusting exposure field 28 (shown in Figure 1A).
In fig. ib, moving shield 26C includes shield aperture 26E.Using the design, moving shield 26 can be back and forth
It is mobile with selectively and alternatively from along either Y-axis (scanning direction) to the size for adjusting exposure field 28.
In addition, shield shifter 26D can be the motor controlled as control system 24 (shown in Figure 1A), scanned
During journey according to scanning direction from along either Y-axis to the size for selectively and alternatively adjusting exposure field 28.Another
It selects in embodiment, optical shutter component 26 may include additional brake or moving parts, to allow to modify the shape of exposure field 28,
To correct the inhomogeneities or other effects of EUV irradiation.
Referring back to Figure 1A, optical shutter component 26 can be along 55 quilt of beam path between EUV irradiation source 34 and workpiece 22
Positioning is in multiple different locations.For example, optical shutter component 26 can be oriented (i) in patterned element along beam path 55
Near 16, near (ii) workpiece 22 or at or near (iii) intermediate image plane.In Figure 1A illustrated embodiment, optical gate group
Part 26 is positioned in the middle graph between the second irradiation optical element 40 and third irradiation optical element 42 along beam path 55
As at plane 56.Therefore, the EUV light beam 13C that adjusted for being directed into patterned element 16 has been shaped.In alternative embodiment party
In formula (it has intermediate image plane at another position (such as, between patterned element 16 and workpiece 22)), pattern
Shield 26 can be positioned at the intermediate image plane (not shown) along beam path 55.
It should be noted that any of EUV light beam 13A, 13C, 13D, 13E can be collectively referred to as EUV light beam.In addition,
As it is used herein, term beam path 55 should refer to that EUV light beam marches to the path of workpiece 22 from irradiation source 34.
Fig. 2A is the simplification top view of workpiece 22, which has been processed to include that existing pattern 233 (is only used as roundlet
Circle instantiates a part), have on workpiece 22 multiple neighboring dies 260 (also referred to as " exposure diapason (shot) ", " diapason " or
" chip ").The design of existing pattern 233 and quantity, the dimension and shape of crystal grain 260 can change.It is non-shown in Fig. 2A
In proprietary example, workpiece 22 has been processed to include 96 rectangle crystal grain 260.In addition, the work for being 300 millimeters for diameter
Part 22, each crystal grain 260 for example can be 26 millimeters and multiplies 33 millimeters (along Y-axis) (along X-axis).However, other quantity and other rulers
It is very little also possible.The center of each crystal grain 260 is identified with plus sige.Stepping can be used and repeat lithography system or stepping and sweep
Lithography system (not shown) is retouched to create each crystal grain 260, the stepping and repetition lithography system or stepping on workpiece 22 and sweep
Retouch lithography system and make the regional exposure on workpiece 22 with create one in crystal grain 260 and then step to another region with
Create another crystal grain 260.The processing is repeated until completing all existing pattern 233.
Regrettably, as herein provided, the existing pattern 233 on workpiece 22 often distorts.As non-exclusive example,
The distortion of existing pattern 233 can be by residual stress, the work in the temperature change of workpiece 22 during various procedure of processings, workpiece 22
The clamping of part 22, the etching of workpiece 22, in stepping and repeat light shield (reticle) used in lithography system clamping and/or
Scrambling in the Projection optics of stepping and repetition lithography system causes.
Fig. 2 B is to illustrate the simplification figure of the original wide distortion data using stepping and the workpiece 22 for repeating lithography system processing.
It should be noted that original distortion data will be different each workpiece 22.In fig. 2b, by between multiple alternatings on workpiece 22
Multiple small vectors (arrow) 262 of the position separated indicate distortion.These vectors 262 instantiate existing pattern 233 (in Fig. 2A
Show) how to distort relative to desired pattern (not shown) in those specific locations.In general, the size of vector 262 indicates
The size of distortion, direction indicate the distortion direction since its appropriate location.
In fig. 2b, the X-axis and Y-axis size for also illustrating workpiece 22 are for reference.In this example, workpiece 22 has
300 millimeters of diameter.It should be noted that for workpiece 22 shown in Fig. 2 B, distortion highest in right lower quadrant, and upper left as
It is minimum in limit.
As non-exclusive example, can have by precise measurement pattern 233 and by existing pattern 233 and desired pattern into
Row relatively generates distortion data.
It should be noted that wide distortion data shown in Fig. 2 B includes two main effects, that is, how complete (i) workpiece 22 is
How local stretching or distortion, and (ii) each crystal grain 260 distort.
Fig. 2 C is only to illustrate the simplification figure of the global distortion data (using small arrow) of the workpiece 22.In other words, Fig. 2 C
It is to instantiate the linear fit for the data how entire workpiece 22 distorts.This can also be referred to as distortion data between diapason
(inter-shot distortion data) or workpiece distortion data.
It should be noted that for workpiece 22 shown in Fig. 2 C, global distortion highest in right lower quadrant of workpiece 22, and
It is minimum in left upper quadrant.
For example, global distortion data in Fig. 2 C can be by by original shown in the linear equation of X and Y allocation of distortion and Fig. 2 B
Beginning data are fitted to generate.
Fig. 2 D is to illustrate the figure of the distortion data (using small arrow) of each crystal grain 260 of the workpiece 22.It should be noted that right
The workpiece 22 shown in Fig. 2 D, the distortion of each crystal grain 260 are approximately uniform (consistent and repetition).This is because from stepping and
The microstrain of repeated exposure process or stepping and scan exposure process is usually by the light shield (not shown) that uses during exposing
Gravity sag, light shield temperature fluctuation, by clamp caused by light shield deformation and lithography system projecting lens assembly change
Shape characteristic and cause.Microstrain can also be referred to as distortion data in diapason (intra-shot distortion data).
It should be noted that can be by subtracting the workpiece distortion from Fig. 2 C in the overall distortion data of width from from Fig. 2 B
Data calculate microstrain data.
Fig. 2 E shows the figure generated using the microstrain data from Fig. 2 D, to estimate in 96 crystal grain 260
The common distortion shape of each.In Fig. 2 E, which is instantiated using linear polynomial equation (first order corrections) generation
For the common distortion shape of each crystal grain.
Fig. 2 F instantiates residual distortion data.More specifically, residual distortion data shown in Fig. 2 F are by from Fig. 2 D
Microstrain data in subtract the figure of Fig. 2 E and obtain.
Fig. 3 A is simplified flowchart, and it illustrates cover for the new pattern 330 that generates the EUV lithography system 10 by Figure 1A
And the step of matching existing pattern 233 and taking.More specifically, at frame 300, figuratum distortion number is determined on workpiece
According to.Once it is determined that the distortion data of the workpiece, is just determined as covering new pattern needed for existing pattern 302 at frame 302
One or more control parameters.In other words, using the distortion data of existing pattern 233, the phase of new pattern 330 can be determined
Position and characteristic are hoped, so that a plurality of lines matching of new pattern 330 and covering the existing pattern 233 of distortion.As herein provided,
It can determine one or more control parameters scanned every time for creating new pattern 330, so that the new covering of pattern 330 distortion
Existing pattern 233.Step 300 and 302 can be executed with off-line execution and before the exposure for starting new pattern 330.
It may include being directed to generating the control parameter of new 330 period of pattern EUV lithography system 10 as non-exclusive example
The adjusting (for example, the X-axis of workpiece deviate, the theta z-axis (θ z) of workpiece rotate) of each scanning track, one or more times
The magnification change of patterned element pattern and/or the patterned element pattern during scanning one or more times during scanning
Magnifying power inclination.In addition, these control parameters can be determined according to the X of workpiece and/or Y-axis position.Pass through several potential sides
Method, which can be found, determines each of the new pattern of the expectation and these control parameters: (i) expresses multinomial or other analyses
Formula and measure data fitting；(ii) interpolation is carried out between measurement point and keeps any discontinuity point smooth；(iii) it solves and optimizes
Problem makes residual while keeping and meeting the track of the therefrom in relation to speed, acceleration and acceleration (jerk)
It is remaining to minimize the error；And (iv) makes the smooth trajectory using digital filter.
Next, new pattern 330 is transferred to workpiece 22 using control parameter at frame 304.More specifically, can control
EUV lithography system 10 shown in drawing 1A adjusts patterning member to pass through while being scanned and exposed to workpiece 22
Scanning track, magnifying power and the magnifying power inclination of part pattern, match the new dense line 330 across entire workpiece 22 simultaneously
Existing pattern 233 is covered, thus the distortion of compensation workpiece 22 during previous processing.Using the design, EUV lithography system 10 will
New pattern 330 is generated in a manner of matched and new pattern 330 is made to distort, so that with the phase in the case where not adjusting control parameter
Than new pattern 330 is more accurately directed at the existing pattern 233 being already present on workpiece 22.
Fig. 3 B is a part of the new pattern 330 of the parallel lines 332 formed including the use of the EUV lithography system 10 of Figure 1A
The simplification diagrammatic illustration of workpiece 22.At this moment, the first band 364 of the substantially parallel line 332 only intensively filled has been transferred to work
Part 22.However, the almost whole surface of workpiece 22 will include the substantially parallel line 232 intensively filled when completing.It should be noted that
It arrives, for clarity, greatly exaggerates X-axis interval and the shape of line 332 in figure 3b.In this embodiment, it puts down for every
Line 332 is roughly parallel to Y-axis and extends perpendicular to X-axis across entire workpiece 22.It should be noted that parallel lines shown in Fig. 3 B
332 are merely an illustrative.It should be understood that in (that is, semiconductor wafer) non-proprietary embodiment, adjacent parallel lines
Interval (spacing) between 332 can be in the range of ten (10) nanometers to 40 (40) nanometer.It is to be appreciated, however, that between being somebody's turn to do
It is not necessarily to be construed as limiting away from range.EUVL tool 10, which can be used, will have less than ten (10) nanometers (for example) or greater than 40
(40) on the patterning to workpiece 22 of parallel lines 332 of the spacing of nanometer (for example).In alternative non-exclusive example, adjacent parallel lines
332 can have the spacing less than 70 nanometers, 60 nanometers, 50 nanometers, 40 nanometers, 30 nanometers, 20 nanometers, 10 nanometers or 5 nanometers.
In addition, " intensive filling " indicates substantially continuous line pattern although in most cases, intensively as it is used herein, phrase
The line of filling will substantially cover entire workpiece surface, but this is definitely not a Xiang Yaoqiu.In alternative embodiment, parallel lines can
Change with periodic intermittent and/or spacing.
Fig. 3 B also illustrates the exposure field 28 created on workpiece 22 by the EUV lithography system 10 of Figure 1A.Show at this
In example, in workpiece 22 relative to during the first scanning 365 of exposure field 28, the first band 364 of parallel lines 332 is transferred to work
Part 22.In the first scanning 365, platform shifter 50 (shown in Figure 1A) is controlled so as to that (use is thicker for track 366 along the first scanning
Dotted line show) first of parallel lines 332 is created relative to 28 travelling workpiece 22 (page in Fig. 3 B is downward) of exposure field
Band 364.In figure 3b, the first scanning track 366 is zigzag and is roughly parallel to Y-axis extension.More specifically, first
In scanning, the first scanning track 366 includes moving along X-axis and with about the z axis some approximately along Y-axis, so that new figure
Case 330 is matched with existing pattern 233.As herein provided, shifting of the workpiece 22 during first sweeps anchor along X-axis and about the z axis
It is dynamic to can be workpiece 22 along the function of the position of Y-axis.
In addition, as herein provided, the magnifying power and patterned element of patterned element pattern 16A (being shown in Figure 1A)
The inclined magnifying power of the patterned element of pattern 16A can change during the first scanning 365, so that new pattern 330 is closely
Cover existing pattern 233.For example, in some embodiments, patterned element 16 (shown in Figure 1A) or workpiece 22 are adjusted
Focal position will generate the magnification change of parallel lines 332.Using this effect, patterned element 16 and/or workpiece 22 can be with
It slightly moves in a focus direction, so that minor change occurs for the spacing of track 332.In addition, by making patterned element 16
And/or workpiece 22 is slightly tilted around Y-axis, can produce " magnifying power inclination ", wherein print gap is in the X direction across exposure field 28
Linearly change.
In addition, in figure 3b, the first band 364 includes eight lines spaced apart, it is merely represented in along the first scanning rail
The line of the much larger number (for example, millions of) being printed onto during the single sweep operation of mark 366 on workpiece 22 intensively filled.One
In a embodiment, the width of the first band 364 (and exposure field 328 on workpiece 22) of line 332 can be several mm wides.Example
Such as, the width of exposure field 328 may be about 5 mm wides.Non-exclusive example as an alternative, the interval between adjacent parallel lines 232
(spacing) can be less than about 5 nanometers, 10 nanometers, 20 nanometers, 30 nanometers, 40 nanometers, 50 nanometers, 60 nanometers or 70 nanometers.Such as this
Provided by text, " intensive filling " refers to the substantially continuous line pattern of the significant changes at no any gap or interval.
As shown in Figure 3B, in some embodiments, continuous first is being printed across workpiece 22 using EUV lithography system 10
During band 364, it is necessary to which to each boundary 367A of neighboring die 260 (shown in Fig. 2A), (it is prominent aobvious with dotted ellipse
Show) at the first scanning track 366 carry out relatively unexpected change.In other words, during the first scanning 365, the first scanning
Track 366 can extend approximately along Y-axis, have unexpected discontinuity point at each boundary 367A of neighboring die 260
367B.These discontinuity poinies 367B is necessary for adjusting the first scanning track 366 at the 367A of these boundaries, so that first
The covering of band 364 is using stepping and repeats lithography system or stepping and scan lithography system and be printed on crystal grain 260 have figure
Case 233.It should be noted that in figure 3b, new pattern 330 is across nine crystal grain 260 transfer by column alignment.Accordingly, there exist eight sides
Boundary 367A, and the first scanning track 366 includes eight discontinuity point 367B.
In some embodiments, it in order to continuously shift the first band 364, may be needed during the first scanning 365
Slow travelling workpiece 22 and/or system may need that exposure field 28 is designed to make to have relatively small Y-axis size 328.Example
Such as, in optionally proprietary example, Y-axis size 328 can be less than about 0.2 millimeter, 1 millimeter, 2 millimeters, 3 millimeters, 5 millimeters or 10 millis
Rice.
After creating the first band 364, workpiece 22 can be then scanned in opposite direction along X-axis stepping, with creation
Next band of parallel lines.It is alternately performed scanning process and stepping process, until creating the entire of parallel lines 332 on workpiece 22
Until pattern 330.
More specifically, Fig. 3 C is the simplification diagrammatic illustration of workpiece 22, in addition to the EUV lithography system 10 using Figure 1A formed the
Except one band 364, workpiece 22 further includes the second strip 368 (being shown with short dash line) of parallel lines 332.
Fig. 3 C also illustrates the exposure field 28 created on workpiece 22 by the EUV lithography system 10 of Figure 1A.Show at this
In example, in workpiece 22 relative to during the second scanning 369 of exposure field 28, the second strip 368 of parallel lines 332 is transferred to work
Part 22.In the second scanning 369, platform component 20 (shown in Figure 1A) is controlled as (using thicker along the second scanning track 370
Dotted line is shown) second strips 368 of parallel lines 332 is created relative to 28 travelling workpiece 22 of exposure field (in figure upwards).?
In Fig. 3 B, the second scanning track 370 is zigzag and is roughly parallel to Y-axis extension.More specifically, scanning 369 second
In, the second scanning track 370 includes that along X-axis and about the z axis some move approximately along Y-axis, so that newly pattern 330
It is matched with existing pattern 233.As herein provided, the movement along X-axis and about the z axis can be workpiece 22 along the position of Y-axis
The function set.These, which are adjusted, is directed at the existing average displacement of pattern 233 in X direction for the new pattern 330 for allowing to make printing, and
Make the patterned element line 332 " steering " in the diameter printed patterns element line 332 across workpiece 22.
In addition, as herein provided, the magnifying power and patterned element of patterned element pattern 16A (being shown in Figure 1A)
The magnifying power inclination of pattern 16A can change during the second scanning 369, so that with the phase in the case where not carrying out these adjustings
Than new pattern 330 closely covers existing pattern 233.
It should be noted that the second scanning track 370 is slightly different with the first scanning track 366, because the distortion of workpiece 22 exists
It is different in the region.Therefore, second strip 368 and the first band 364 are slightly different.
Therefore, as herein provided, 22 phase of workpiece can be made for scanning 365,369 every time and during each scanning
Scanning track 366,370, magnifying power and/or magnifying power tilt variation for exposure field 28, to customize each band 364,368
More accurately cover existing pattern 233.In other words, scanning track 366,370, magnifying power and magnifying power inclination can be based on
The amount of distortion of existing pattern 233 is different for different zones.
Fig. 3 D is the simplification diagrammatic illustration of a part for being transferred to workpiece 22 of the first band 364.In this drawing, first
The a part for scanning track 366 is illustrated with thicker dotted line, and instantiates leftmost side line 332L and rightmost side line 332R.At this
In embodiment, the first scanning track 366 approximately along Y-axis, but include moved along X-axis and with about the z axis some so that
New pattern 330 is matched with existing pattern 233.
It should be noted that the first band 364 has the strip width measured between online 332L, 332R approximately along X-axis
372.As herein provided, exposure device 10 provided in this article, which is controlled as being selectively adjusted during scanning, is directed to
The magnifying power of the patterned element pattern 16A of workpiece 22, to be selectively adjusted the item of the first band 364 along scanning track 366
Bandwidth 372, so that the first band 364 is matched with existing pattern 233.In fig. 3d, strip width 372 subtracts from the top to the bottom
It is small.Change in any way however, strip width 372 can according to need along the first scanning track 366, so that the first band
364 more accurately cover existing pattern 233 the case where adjusting compared to no magnifying power.
As non-exclusive example, the adjusting of the focal position of patterned element 16 (showing in Fig. 1) or workpiece 22 will be generated
Magnification change changes strip width 372 along the first scanning track 366.Using this effect, corresponding platform group can use
Part slightly moves patterned element 16 and/or workpiece 22 along focus direction (upward or downward along Z axis), so that track 332L,
Small variation (being selectively adjusted the spacing) occurs for the spacing of 332R.In another embodiment, patterning member can be passed through
Part platform component 14 is along X-axis selectively mechanical stretching or compression patterned element pattern 16A (shown in Figure 1A), to change amplification
Rate.Also alternatively, the temperature of adjustable patterned element 16 is mechanically to change the spacing of patterned element pattern 16A.
Fig. 3 E is the simplification diagrammatic illustration for being transferred to another part of the first band 364 of workpiece 22.In this drawing,
A part of one scanning track 366 is illustrated with thicker dotted line, and instantiates leftmost side line 332L and rightmost side line again
332R.In this embodiment, the first scanning track 366 is again approximately along Y-axis, but includes along X-axis and about the z axis some
It is mobile, so that new pattern 330 is more closely matched with existing pattern 233 compared with not adjusting in the case where scanning track.
It should be noted that there is the first band 364 (i) to survey substantially along the x-axis between leftmost side line 332L and scanning track 366
The left intermediate width 374L of amount, and (ii) in rightmost side line 332R and are scanned in the right side measured substantially along the x-axis between track 366
Between width 374R.As herein provided, exposure device 10 provided in this article is controlled as selectively adjusting during scanning
Section is directed to the magnifying power inclination of the patterned element pattern 16A at workpiece 22, to be selectively adjusted left intermediate width 374L
With right intermediate width 374R so that the first band 364 is matched with existing pattern 233.In fig. 3e, (i) intermediate width 374L,
374R is approximately equal at top, and (ii), due to the inclined adjusting of magnifying power, near bottom, left intermediate width 374L is big
In right intermediate width 374R.However, intermediate width 374L, 374R can according to need along the first scanning track 366 with any
Mode changes, so that the first band 364 covers existing pattern 233.
As non-exclusive example, by utilizing patterned element platform shifter 14B (shown in Figure 1A) around Y-axis rotating pattern
Change element pattern 16A or using platform component 20 (shown in Figure 1A) around Y-axis rotational workpieces 22, it is inclined that magnifying power may be implemented
It adjusts.By being slightly tilted patterned element 16 and/or workpiece 22 around Y-axis, " magnifying power inclination " can produce, wherein line
The print gap of 332L, 332R linearly change across exposure field in the X direction.For example, patterned element 16 can be around Y-axis along
One direction slightly rotates to reduce left intermediate width 374L, and slightly rotates along opposite second direction to increase a left side around Y-axis
Intermediate width 374L.
All adjust provided in this article will make it possible to realize the new pattern of printing 330 and existing pattern 233 in X direction
" steering " of the improvement alignment of average displacement and patterned element line 332 when being printed across workpiece 22.
Fig. 3 F is a part (being shown with the small circle for indicating the point on existing pattern) of existing pattern 233 and is transferred to
The amplification of a part of the first band 364 of the new pattern 330 of workpiece 22 simplifies diagrammatic illustration.Fig. 3 F illustrates how customization first
Band 364 is so that it closely covers existing pattern 233.It should be noted that the first band 364 is close in the centre of each crystal grain
Cover existing pattern 233.However, in the boundary 367A of neighboring die 260 (it is shown in broken lines), (it is prominent aobvious with dotted ellipse
Show) at, it, may between the first band 364 and existing pattern 233 due to the quick variation at the boundary 367A of neighboring die 260
There are some differences.
There is provided herein for control EUV lithography system 10 enable the first band 364 at the 367A of boundary preferably
Follow several alternative methods of existing pattern 233.
For example, Fig. 4 A is the simplification diagrammatic illustration of workpiece 22, it illustrates workpiece 22 along first Jing Guo exposure field 28
Scan another first scanning 465 of track 466.In this embodiment, extreme ultraviolet lithography system 10 (shown in Figure 1A) quilt
Control be so that first scanning 465 during along first scanning track 466 crystal grain column 480 in every a crystal grain 260
(being illustrated as dashed rectangle) does not expose.In this example, during the first scanning 465, travelling workpiece 22, so that existing along Y-axis
Nine crystal grain 260 being aligned in crystal grain column 480 pass through below exposure field 28.It should be noted that previously having created these crystal grain
260, and for the sake of clarity, a crystal grain column 480 are illustrated only in Fig. 4 A.In addition, being moved to from the bottom of crystal grain column 480
Top, for crystal grain 260 is labeled as 1-9 convenient for discussing.
In this example, extreme ultraviolet lithography system 10 is controlled such that the crystal grain 260 of each odd-numbered (for example, brilliant
Grain 1,3,5,7,9) along first scanning track 466 first scanning 465 during be exposed, with create the first band first
Part 464F, and the crystal grain 260 (for example, crystal grain 2,4,6,8) of each even-numbered is along the of the first scanning track 466
It is not exposed during one scanning 465.Using the design, 465 period console components 20 can be scanned first, so that first
464F is divided preferably to match at the boundary 467A of the crystal grain 260 of odd-numbered with existing pattern 233 (shown in Fig. 2A).Substantially
On, during the first scanning 465, the region of the crystal grain 260 of even-numbered provides the time be moved to workpiece 22 for accurate
Print the relative position appropriate of the crystal grain 260 of next odd-numbered in ground.In short, in the first scanning 465, by passing through
While " even number " crystal grain 260 in the case where exposure light is closed (and/or the optical shutter component 26 shown in Figure 1A stops)
Interpolation smooth track, only " odd number " crystal grain 260 are exposed.
Then, extreme ultraviolet lithography system 10 is controlled as during the second scanning 469 along the first scanning track 466 to not
The crystal grain of exposure is exposed.Fig. 4 B is the simplification diagrammatic illustration of workpiece 22, and it illustrates workpiece 22 along the second scanning track
470 the second scanning 469 Jing Guo exposure field 28.In this embodiment, extreme ultraviolet lithography system 10 (shown in Figure 1A) is by again
Secondary control be made as so that second scanning 469 during along second scanning track 470 crystal grain column 480 in every a crystal grain
260 (being illustrated as dashed rectangle) do not expose.
In this example, extreme ultraviolet lithography system 10 is controlled such that the crystal grain 260 of each even-numbered (for example, brilliant
Grain 2,4,6,8) be exposed during the second scanning 469 along the second scanning track 470, to create second of the first band
Divide 464S, and the crystal grain 260 (for example, crystal grain 1,3,5,7,9) of each odd-numbered is not exposed during the second scanning 469
Light.Using the design, 469 period console components 20 can be scanned second, so that second part 464S is in even-numbered
It is preferably matched at the boundary 467A of crystal grain 260 with existing pattern 233.Substantially, during the second scanning 469, odd-numbered
Crystal grain 260 region provide the time workpiece 22 is moved to the appropriate of the crystal grain 260 for being used to print next even-numbered
Relative position.Therefore, when passing through the same area for the second time, make while the odd number crystal grain 260 by being exposed
Expose even number crystal grain 260 with smooth interpolation.
It should be noted that for clarity, the first part 464F of previous prints is not shown in Fig. 4 B.However, referring to Fig. 4 A
And 4B, first part 464F and second part 464S cooperate to form complete first band of substantially parallel line.It should also be noted that
It is overlapping but not exactly the same to scan track 466,470 parts.Utilize the design, it is necessary to which workpiece 22 is scanned twice by exposure field 28
To create new pattern completely.
In some embodiments, optical shutter component 26 (shown in Figure 1A) can be used for the boundary 467A in crystal grain 260
Place accurately starts and stops exposure.In this embodiment, shield 26C be used to selectively limit the Y-axis of exposure field 28
Edge.Using the design, shield 26C can be used to be opened and closed in conjunction with scanning.More specifically, can control screening
Plate 26C when close to boundary 467A to progressively close off and completely close at the 467A of boundary.Then, shield 26C can be controlled
It is made as being gradually opened at the beginning of next crystal grain 260.Alternatively, EUV irradiation source is switched on and off for example, can according to need
34 are exposed with starting and stopping.
It twice by each band on scanning workpiece exposes penetrated every one in the first pass using the design
Domain, and second by middle exposure alternately diapason, solves to expose continuous scanning and is matched to that (these are normal using conventional tool
Rule tool generates discontinuity point between adjacent diapason) printing layer aberration problems.
In yet another embodiment, referring to Fig. 4 C, if scanning work relative to exposure field 28 with relatively low scanning speed
Part 22, and platform component 20 (shown in Figure 1A) has high acceleration capacity, then can be at the boundary 467A of each crystal grain 260
Stop exposure, and workpiece 22 can be made to stop and fallen back.Then, can start to expose at next crystal grain 260.Utilize this
It designs, the exposure that EUV illumination system 10 shown in Figure 1A is controlled as stopping at the interface 467A of neighboring die 260 is laid equal stress on
Set scanning track 492.In one embodiment, when exposure field 28 reaches interface 467A, shield 26 is begun to shut off, so that
Neighboring die 260 is not exposed.Once closing shield and stopping exposing, platform just slows down and in reverse movement along opposite Y
Direction accelerates.When platform inverts its position enough, slow down again and accelerate along scanning direction, so that being arrived again at it
It is properly positioned when up to interface 467A.When exposure field 28 begins through interface 467A, EUV illumination system 10 is controlled
To restore irradiation, and shield 26 starts to open.Therefore, during scanning 490, scanning track 492 (being shown with real thick line) packet
Include the reverse movement during the exposure of the first band 494 (being only shown in broken lines outside line) along Y-axis.
Using the design, solves to expose continuous scanning and be matched to benefit by stopping at each crystal grain 260 and resetting
With the aberration problems for the layer that conventional tool (these conventional tools generate discontinuity point between neighboring die 260) prints.Therefore,
First band 494 and subsequent band will better cover the existing pattern 233 at the 467A of boundary.
As described above, can be by by mechanical precision, electricity as defined in holding according to the lithography system of above embodiment
Gas accuracy and this mode of optical accuracy assemble each subsystem (including each member listed in appended claims
Part) it constructs.In order to keep various accuracy, before assembly and later, each optical system is adjusted to realize its optics essence
Exactness.Similarly, each mechanical system and each electrical system are adjusted to realize its respective mechanically and electrically accuracy.It will be every
A sub- system assembles are at the mechanical interface that the process of lithography system includes between each subsystem, wiring connection and air pressure
Pipeline connection.Much less, before being assembled into lithography system by subsystems, there is also the processes for assembling each subsystem.
Once lithography system is assembled into using subsystems, with regard to carrying out overall adjustment to ensure to keep accurate in entire lithography system
Degree.Additionally, it is desirable that manufacturing exposure system in the toilet of control temperature and cleanliness.
Furthermore, it is possible to carry out manufacturing semiconductor devices using above system by the process totally shown in Fig. 5 A.In step
In 501, the function and performance characteristic of device are designed.Next, in step 502, being had according to the design of the design procedure of front
The mask (light shield) of pattern, and in parallel step 503, workpiece is fabricated from a silicon.In step 504, by according to this
The mask pattern designed in step 502 is exposed on the workpiece from step 503 by the above-mentioned lithography system of embodiment.In step
In rapid 505, assemble semiconductor devices (including cutting action, bonding process and packaging process), finally, then in step 506
Middle inspection device.
Fig. 5 B instantiates the detailed process illustrated example of the above-mentioned steps 504 in the case where manufacturing semiconductor devices.In Fig. 5 B
In, in step 511 (oxidation step), workpiece surface is aoxidized.In step 512 (CVD step), formed on the surface of the workpiece
Insulating film.In step 513 (electrode forming step), electrode is formed on workpiece by vapour deposition.In step 514 (ion
Implantation step) in, it will be in ion implantation workpiece.Above-mentioned steps 511-514 is directed to the preprocessing of workpiece during forming work pieces process
Step, and selected at each step according to processing request.
In each stage of work pieces process, when above-mentioned preliminary step has been completed, implement following post-processing step.?
During post-processing, firstly, photoresist is applied to workpiece in step 515 (photoresist forming step).It connects down
Come, in step 516 (step of exposure), the circuit pattern of mask (light shield) is transferred to workpiece using above-mentioned exposure device.So
Afterwards, in step 517 (development step), the workpiece being exposed is developed, and in step 518 (etching step), is gone by etching
Except the part (material surface being exposed) in addition to remaining photoresist.In step 519 (photoresist removal step)
In, remaining unwanted photoresist after removal etching.
Multiple circuit patterns are formed by repeating these preliminary steps and post-processing step.
Although illustrated herein and disclosed component is fully able to obtain the purpose before statement and provide herein previously
The advantage, it is to be understood that, which is only the illustration to current preferred mode, and in addition in appended right
Except being described in it is required that, it is not intended to and the details of construction illustrated herein or design is limited.
Claims (23)
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| US15/599,197 | 2017-05-18 | ||
| US15/599,197 US10890849B2 (en) | 2016-05-19 | 2017-05-18 | EUV lithography system for dense line patterning |
| US15/599,148 US11099483B2 (en) | 2016-05-19 | 2017-05-18 | Euv lithography system for dense line patterning |
| PCT/US2017/037786 WO2017222919A1 (en) | 2016-06-20 | 2017-06-15 | Dense line extreme ultraviolet lithography system with distortion matching |
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| CN109690416A true CN109690416A (en) | 2019-04-26 |
| CN109690416B CN109690416B (en) | 2021-12-21 |
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| JP (1) | JP2019518246A (en) |
| KR (1) | KR102458400B1 (en) |
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| CN120085519A (en) * | 2025-05-08 | 2025-06-03 | 上海图双精密装备有限公司 | Scanning unit, scanning method, and lithography device including the scanning unit |
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| US12308072B2 (en) * | 2021-03-10 | 2025-05-20 | Invention And Collaboration Laboratory Pte. Ltd. | Integrated scaling and stretching platform for optimizing monolithic integration and/or heterogeneous integration in a single semiconductor die |
| CN114217512B (en) * | 2022-01-07 | 2022-11-29 | 北京理工大学 | Extreme ultraviolet lithography projection exposure optical system |
| WO2025045456A1 (en) * | 2023-08-30 | 2025-03-06 | Asml Netherlands B.V. | Lithographic apparatus and associated method |
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| US7671970B2 (en) | 2005-07-13 | 2010-03-02 | Asml Netherlands B.V. | Stage apparatus with two patterning devices, lithographic apparatus and device manufacturing method skipping an exposure field pitch |
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| TWI441239B (en) * | 2006-12-12 | 2014-06-11 | Asml Netherlands Bv | Lithographic device manufacturing method ,lithographic cell ,and computer program product |
| SG153748A1 (en) * | 2007-12-17 | 2009-07-29 | Asml Holding Nv | Lithographic method and apparatus |
| NL1036349A1 (en) * | 2007-12-28 | 2009-06-30 | Asml Holding Nv | Scanning EUV interference imaging for extremely high resolution patterning. |
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| JP5838594B2 (en) * | 2011-05-27 | 2016-01-06 | 株式会社ニコン | Double patterning optimization method and system, pattern formation method, exposure apparatus, and device manufacturing method |
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- 2017-06-15 JP JP2018565728A patent/JP2019518246A/en active Pending
- 2017-06-15 WO PCT/US2017/037786 patent/WO2017222919A1/en not_active Ceased
- 2017-06-15 KR KR1020197001720A patent/KR102458400B1/en active Active
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| US5739899A (en) * | 1995-05-19 | 1998-04-14 | Nikon Corporation | Projection exposure apparatus correcting tilt of telecentricity |
| US7068350B2 (en) * | 2002-06-10 | 2006-06-27 | Nikon Corporation | Exposure apparatus and stage device, and device manufacturing method |
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| KR20190020088A (en) | 2019-02-27 |
| KR102458400B1 (en) | 2022-10-24 |
| JP2019518246A (en) | 2019-06-27 |
| EP3472672A4 (en) | 2020-03-04 |
| CN109690416B (en) | 2021-12-21 |
| EP3472672A1 (en) | 2019-04-24 |
| WO2017222919A1 (en) | 2017-12-28 |
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