CN109782056B - Power detection system for millimeter wave chip band PVT change calibration circuit - Google Patents
Power detection system for millimeter wave chip band PVT change calibration circuit Download PDFInfo
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Abstract
The Power detector is indispensable in the millimeter wave chip, and in the prior art, the Power detector needs to be added with a Power detection system to detect the output Power of a low noise amplifier, a Power amplifier and the like, so that the Power detector is influenced by the changes of a Power supply (Power), a Voltage (Voltage) and a process Temperature (Temperature), namely, the PVT. At the same RF input power, the output DC voltage will vary greatly, resulting in a large detection error of the power detection system. The invention provides a novel power detection system for a PVT change calibration circuit of a millimeter wave chip strip, which introduces a correction system based on a two-point method, in particular provides a novel calibration system utilizing a direct current DC adder, and can reduce the measurement error of the millimeter wave chip strip caused by the change of power supply, voltage and process temperature.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of power detection, in particular to a power detection system for a millimeter wave chip with a PVT change calibration circuit.
[ background of the invention ]
In today's transmitters, a power detection system is of critical importance. As more and more frequency bands are opened to civilian use, more and more frequency bands are used, and coexisting networks with different frequency bands working simultaneously are independent interference sources which interfere with each other to work; meanwhile, in the same network, different ues also interfere with each other, so in order to coexist with other ues and ensure the communication quality of the ues, it is necessary to ensure that the interference between them is within the allowable range. Meanwhile, on the premise of meeting normal communication, the modern communication system more expects to reduce the transmitting power as much as possible, improve the system performance and prolong the service time of a terminal user. Therefore, the detection system module for controlling the transmission power has become an indispensable component in the transmission chain.
In the millimeter wave chip, the power detection system is required to be added to detect the output power of the low noise amplifier and the power amplifier. RFIN accesses the radio frequency signal output by the amplifier as described by the equation below. The NMOS is biased in the weak inversion region. The current in the weak inversion region is:
wherein, ID0Is a process-dependent current constant, W/L is the width-to-length ratio of the mos tube, n is a constant related to the depletion layer characteristics, VTIs a thermal voltage, and the voltage is,
VGS＝VNBIAS+VRFcos(wt)
expanding the exponential function by a series and using a second order approximation, optionally
And a low-pass filter is added at the output end of the power detection system to filter the alternating current signal. The output DC voltage versus the input RF signal voltage amplitude can be obtained. The output DC voltage is in dB linear relationship with the power of the input signal.
However, due to the influence of the Power supply (Power), Voltage (Voltage), and process Temperature (Temperature), i.e. PVT, the output DC Voltage will vary greatly with the same RF input Power, which affects the detection effect, and causes a large detection error of the Power detection system.
[ summary of the invention ]
In order to overcome the technical problems in the existing millimeter wave chip Power detection system, namely, the technical problems that the detection of the Power detection system is influenced by the change of the Power supply Voltage of the process Temperature to cause the change of the DC Voltage and cause larger errors of the detection of the Power detection system due to the fact that the Power detection system is added to detect the low noise amplifier, the Power amplifier and the like, the invention provides a novel Power detection system for a millimeter wave chip with a PVT change calibration circuit.
In order to achieve the purpose, the invention is realized by the following technical scheme:
a novel power detection system for a millimeter wave chip strip PVT change calibration circuit is characterized by comprising a main power detector 1, an auxiliary power detector 21, a p-tube bias voltage generation circuit, an auxiliary power detector 22 and an n-tube bias voltage generation circuit, wherein bias voltages generated by the p-tube bias voltage generation circuit and the n-tube bias voltage generation circuit are loaded on the main power detector 1 to form a main calibration circuit; the sub power detector 21 and the sub power detector 22 are connected to the main power detector 1 through a bias voltage generating circuit to form a sub calibration circuit.
Further, the main power detector module includes a main power detector 1, a radio frequency input RF1, a DC output DC1, a bias signal N channel input NBIAS1, and a bias signal P channel input PBIAS 1.
Further, the sub-power detector 21 and the P-tube bias voltage generating circuit module include a sub-power detector 21, an operational amplifier OPA21, a radio frequency input RF21, a direct current output DC21, a bias signal N-channel input NBIAS21, and a bias signal P-channel input PBIAS 21; the sub-power detector 22 and the N-transistor bias voltage generation circuit module include a sub-power detector 22, an operational amplifier OPA22, a radio frequency input RF22, a DC output DC22, a bias signal N-channel input NBIAS22, and a bias signal P-channel input PBIAS 22.
Further, the NBIAS21 terminal of the secondary power detector 21 is electrically connected to the positive input of the voltage terminal Vadd, the DC21 terminal of the secondary power detector 21 is electrically connected to the positive input of the operational amplifier OPA21, the PBIAS21 terminal of the secondary power detector 21 is connected to the bias signal P-channel input PBIAS1 terminal of the primary power detector, the negative input of the operational amplifier OPA21 is electrically connected to the voltage terminal Vlo input, and the output of the operational amplifier 21 is connected to the bias signal P-channel input PBIAS21 terminal of the primary power detector; the NBIAS22 terminal of the secondary power detector 22 is connected to the Vadd input terminal, the DC22 terminal of the secondary power detector 22 is electrically connected to the positive input of the operational amplifier OPA22, the PBIAS22 terminal of the secondary power detector 22 is connected to the PBIAS1 terminal of the bias signal P-channel input terminal of the primary power detector, and the negative input of the operational amplifier OPA21 is electrically connected to the Vhi input terminal.
Further, when the main power detector 1 has an RF input signal, the main power detector current value satisfies:
the current of the secondary power detector 21 is
Wherein:
ID0 is a process dependent current constant,
W/L is the width to length ratio of the tube,
n is a constant related to the depletion layer characteristics,
VTis a thermal voltage.
The invention has the beneficial effects that: compared with the prior art, the invention provides a novel power detection system for a millimeter wave chip strip PVT change calibration circuit, a correction system based on a two-point method is introduced into the power detection system, particularly a novel calibration system using a direct current DC adder is provided, and the circuit can reduce the measurement error of the millimeter wave chip strip caused by the change of power supply, voltage and process temperature.
[ description of the drawings ]
The invention is further described with reference to the following figures and detailed description.
Fig. 1 is a system of basic power detectors.
FIG. 2 shows the PSS results as a function of process temperature and supply voltage.
Fig. 3 shows a novel calibration system proposed by the present invention.
FIG. 4 shows the PSS results measured by the system of the present invention as a function of process temperature and supply voltage.
[ detailed description ] embodiments
In order to make the objects, technical means and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings and examples. It should be understood, however, that the description herein of specific embodiments is only intended to illustrate the invention and not to limit the scope of the invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
As shown in fig. 3, a novel power detection system for a millimeter wave chip strip PVT variation calibration circuit is characterized by comprising a main power detector 1, an auxiliary power detector 21 and an auxiliary power detector 22, wherein the auxiliary power detector 21 and the auxiliary power detector 22 are loaded on a bias circuit of the main power detector 1 to form a main calibration circuit; the sub power detector 21 and the sub power detector 22 are connected to the main power detector 1 through a bias voltage generating circuit to form a sub calibration circuit.
Further, the main power detector module comprises a main attack detector 1, a radio frequency input RF1, a DC output DC1, a bias signal N channel input NBIAS1, a bias signal P channel input PBIAS 1;
further, the sub-power detector 21 module comprises a sub-power detector 21, an operational amplifier OPA21, a radio frequency input RF21, a DC output DC21, a bias signal N channel input NBIAS21, a bias signal P channel input PBIAS 21; the secondary power detector 22 module includes a secondary power detector 22, an operational amplifier OPA22, a radio frequency input RF22, a DC output DC22, a bias signal N-channel input NBIAS22, and a bias signal P-channel input PBIAS 22.
Further, the NBIAS21 terminal of the secondary power detector 21 is connected to the output terminal of the adder Vadd, the DC21 terminal of the secondary power detector 21 is electrically connected to the positive input of the operational amplifier OPA21, the PBIAS21 terminal of the secondary power detector 21 is connected to the bias signal P-channel input PBIAS1 terminal of the primary power detector, the negative input of the operational amplifier OPA21 is electrically connected to the Vlo input, and the output of the operational amplifier OPA21 is connected to the bias signal P-channel input PBIAS21 terminal of the primary power detector; the NBIAS22 terminal of the secondary power detector 22 is connected to the Vadd input terminal, the DC22 terminal of the secondary power detector 22 is electrically connected to the positive input of the operational amplifier OPA22, the PBIAS22 terminal of the secondary power detector 22 is connected to the PBIAS1 terminal of the bias signal P-channel input terminal of the primary power detector 1, and the negative input of the operational amplifier OPA21 is electrically connected to the Vhi input.
The effect of the secondary power detector 22 and corresponding op amp 22 is to stabilize the DC voltage at the output of the main power detector at 900mV when the main power detector RF input is zero, regardless of PVT variations. While the sub-power detector 21 and the corresponding operational amplifier OPA21 stabilize the DC output voltage at 200mV when a certain RF signal power is applied. Therefore, the two ends of the relation curve of the output voltage and the input power are fixed, and the influence of PVT change is small.
NBIAS and PBIAS are generated by a calibration circuit, and neither secondary power detector has an RF signal input. The DC output of the secondary power detector 22 is connected to the positive input of the operational amplifier OPA22, the secondary input is a 900mV DC voltage source, and the output of the op-amp generates the NBIAS voltage of the primary and secondary power detectors 22. The output voltage is added by a voltage adder to 150mV to generate NBIAS for the secondary power detector 21, the DC output of the secondary power detector 21 is connected to the positive input of another operational amplifier OPA21, the negative input of which is a 200mV DC supply, and the output generates PBIAS for the three power amplifiers.
Since NBIAS and PBIAS of main power detector 1 are the same as the values of the secondary power detector when the RF input to main amplifier 1 is zero. The two power detectors are in the same state, so the output DC voltage is the same.
As previously analyzed, when the main power detector has an RF input signal, the current of the main power detector:
and the current of the first secondary power detector is as follows:
the primary power detector and the secondary power detector are loaded the same way, and when the RF input is increased to a certain power, there will be IDS1＝IDS2. The DC output voltage of the main power detector will be fixed at 200mV at this time.
The PSS results as a function of process temperature supply voltage after the addition of calibration circuits are shown in FIG. 4 by adjusting VADDCan move the relationship curve left and right, thereby enabling the power detector to work in the range of-10 dBm to 10dBm of input signal power.
The invention has the beneficial effects that: compared with the prior art, the invention provides a novel power detection system for a millimeter wave chip strip PVT change calibration circuit, a correction system based on a two-point method is introduced into the power detection system, particularly a novel calibration system using a direct current DC adder is provided, and the circuit can reduce the measurement error of the millimeter wave chip strip caused by the change of power supply, voltage and process temperature.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents or improvements made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (4)
1. A power detection circuit for a millimeter wave chip band PVT change calibration circuit is characterized by comprising a main power detector (1), a first auxiliary power detector (21), a p tube bias voltage generation circuit, a second auxiliary power detector (22) and an n tube bias voltage generation circuit, wherein bias voltages generated by the p tube bias voltage generation circuit and the n tube bias voltage generation circuit are loaded on the main power detector (1) to form the main calibration circuit; the first secondary power detector (21) and the second secondary power detector (22) are connected with the main power detector (1) through a bias voltage generating circuit to form a secondary calibration circuit.
2. The power detection circuit of claim 1, wherein the main power detector comprises a main power amplifier (1), a radio frequency input RF1, a DC output DC1, a bias signal N channel input NBIAS1, a bias signal P channel input PBIAS 1; the radio frequency input terminal RF1, the bias signal N channel input terminal NBIAS1, the bias signal P channel input terminal PBIAS1 are connected with the input of the main power amplifier, and the direct current output terminal DC1 is connected with the output of the main power amplifier.
3. The power detection circuit of claim 2, wherein the P-tube bias voltage generation circuit comprises an operational amplifier OPA21, a radio frequency input RF21, a direct current output DC21, a bias signal N-channel input NBIAS21, a bias signal P-channel input PBIAS 21; the N-tube bias voltage generating circuit comprises an operational amplifier OPA22, a radio frequency input terminal RF22, a direct current output terminal DC22, a bias signal N-channel input terminal NBIAS22, a bias signal P-channel input terminal PBIAS22, an NBIAS21 terminal of the first secondary power detector (21) is electrically connected with a positive input of an adder Vadd, a DC21 terminal of the first secondary power detector (21) is electrically connected with a positive input of the operational amplifier OPA21, a PBIAS21 terminal of the first secondary power detector (21) is connected with a bias signal P-channel input terminal PBIAS1 terminal of the main power detector, a negative input of the operational amplifier OPA21 is electrically connected with a low reference voltage Vlo input, and an output of the operational amplifier OPA21 is connected with the bias signal P-channel input terminal PBIAS1 terminal of the main power detector; the NBIAS22 terminal of the second secondary power detector (22) is electrically connected to the adder Vadd negative input, the DC22 terminal of the second secondary power detector (22) is electrically connected to the positive input of the operational amplifier OPA22, the PBIAS22 terminal of the second secondary power detector (22) is connected to the bias signal P-channel input PBIAS1 terminal of the main power detector, and the negative input of the operational amplifier OPA21 is electrically connected to the high reference voltage Vhi input.
4. A power detection circuit according to claim 3, characterized in that the input signal of the main power detector (1) is arranged such that the main power detector current value satisfies:
the current of the first secondary power detector (21) is
Wherein:
ID0 is a process-dependent current constant that,
W/L is the width to length ratio of the tube,
n is a constant related to the depletion layer characteristics,
VTis a thermal voltage, and the voltage is,
Vnbiasis the bias voltage of the N-tube,
VRFis the voltage amplitude of the measured rf signal.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112782466A (en) * | 2020-12-28 | 2021-05-11 | 新郦璞科技(上海)有限公司 | Digital auxiliary calibration RMS power detection method and system |
| CN113848380B (en) * | 2021-10-22 | 2023-10-20 | 深圳市兆驰数码科技股份有限公司 | Power detection circuit and method, and direct current and phase detection system and method |
| CN118169463B (en) * | 2024-05-15 | 2024-10-15 | 杭州岸达科技有限公司 | Power detection circuit |
| TWI891501B (en) * | 2024-09-06 | 2025-07-21 | 國立中山大學 | Detection method and circuit for process, temperature, and voltage variations |
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