CN109855721A - Condenser type pressure hydrophone based on MEMS technology and preparation method thereof - Google Patents
Condenser type pressure hydrophone based on MEMS technology and preparation method thereof Download PDFInfo
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- CN109855721A CN109855721A CN201910105591.1A CN201910105591A CN109855721A CN 109855721 A CN109855721 A CN 109855721A CN 201910105591 A CN201910105591 A CN 201910105591A CN 109855721 A CN109855721 A CN 109855721A
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- 238000005516 engineering process Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 77
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 62
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 62
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 41
- 239000010703 silicon Substances 0.000 claims abstract description 41
- 239000003990 capacitor Substances 0.000 claims abstract description 40
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 39
- 239000011521 glass Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000003921 oil Substances 0.000 claims abstract description 23
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 9
- 229920002545 silicone oil Polymers 0.000 claims abstract description 7
- 238000002347 injection Methods 0.000 claims abstract 8
- 239000007924 injection Substances 0.000 claims abstract 8
- 238000005530 etching Methods 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 238000000206 photolithography Methods 0.000 claims 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 230000035945 sensitivity Effects 0.000 abstract description 13
- 230000002706 hydrostatic effect Effects 0.000 abstract description 4
- 238000009530 blood pressure measurement Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 description 43
- 125000004122 cyclic group Chemical group 0.000 description 21
- 239000000945 filler Substances 0.000 description 14
- 238000001259 photo etching Methods 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005662 electromechanics Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004021 metal welding Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- VDGJOQCBCPGFFD-UHFFFAOYSA-N oxygen(2-) silicon(4+) titanium(4+) Chemical compound [Si+4].[O-2].[O-2].[Ti+4] VDGJOQCBCPGFFD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- Transducers For Ultrasonic Waves (AREA)
Abstract
本发明为一种基于MEMS技术的电容式声压水听器及其制备方法，水听器包括玻璃衬底、环状硅支柱和二氧化硅振动薄膜，二氧化硅振动薄膜、环状硅支柱以及玻璃衬底之间合围形成电容空腔，玻璃衬底的顶面设置有圆片状金属铝下电极，二氧化硅振动薄膜的顶面设置有圆片状金属铝上电极，二氧化硅振动薄膜上围绕圆片状金属铝上电极均布有四个与电容空腔相通的圆形注油孔，电容空腔通过圆形注油孔注满有硅油。本发明水听器尺寸小、灵敏度高、耐静水压能力强，并且工艺流程简洁明了，可以批量生产且成本低廉。本发明水听器可以实现频响范围在5Hz‑2kHz，耐静水压达到20MPa以上以及灵敏度在‑160dB以上的水下声压测量。
The invention relates to a capacitive sound pressure hydrophone based on MEMS technology and a preparation method thereof. The hydrophone comprises a glass substrate, an annular silicon pillar and a silicon dioxide vibration film. The silicon dioxide vibration film and the annular silicon pillar And the glass substrate is enclosed to form a capacitor cavity, the top surface of the glass substrate is provided with a disc-shaped metal aluminum lower electrode, the top surface of the silicon dioxide vibration film is provided with a disc-shaped metal aluminum upper electrode, and the silicon dioxide vibrates Four circular oil injection holes communicated with the capacitor cavity are uniformly distributed around the disc-shaped metal aluminum upper electrode on the film, and the capacitor cavity is filled with silicone oil through the circular oil injection holes. The hydrophone of the invention has the advantages of small size, high sensitivity, strong hydrostatic pressure resistance, simple and clear technological process, mass production and low cost. The hydrophone of the invention can realize the underwater sound pressure measurement with a frequency response range of 5Hz-2kHz, a hydrostatic pressure resistance of more than 20MPa and a sensitivity of more than 160dB.
Description
Technical field
The invention belongs to MEMS technology field, specifically a kind of condenser type pressure hydrophone and its system based on MEMS technology
Preparation Method.
Background technique
Each continent of earth surface is covered by the ocean that the gross area is about 3.6 hundred million square kilometres, and area about accounts for
Earth surface product 71%, however by the end of in today, ocean by the mankind explore part also only account for its 5%.Due to containing
A large amount of mineral resources, living resources and chemical resource, ocean be the treasure-house of a great potential.
Underwater acoustic pressure detection is an important ring for undersea detection, can using accurate sound pressure information combination acoustic pressure gradient information
Accurately to obtain the azimuth-range of submarine target, effectively marine environment can also be monitored using pressure hydrophone.
Pressure hydrophone common at present has piezoelectric type, pressure resistance type and condenser type etc., piezoelectric sound pressure water according to working principle classification
Device is listened to be made using positive (inverse) piezoelectric effect of piezoelectric material, the type sensor processing technology is simple, and it is cheap, it is applicable in wide
It is general, but there are impedance mismatch problems outstanding with gas or liquid medium, influence whether the sensitivity of sensor, bandwidth and electromechanics
The important parameters such as transfer efficiency；Piezoresistive transducer is made using piezoresistive effect, changes Wheatstone bridge bridge by experiencing acoustic pressure
The resistance value of arm resistance changes output voltage in turn to realize the measurement to acoustic pressure, and the linearity is preferable and detection method is simple, but with
Temperature change, the piezoresistance coefficient and resistivity of material can also change, and be unfavorable for the changeable Underwater acoustic pressure measurement of temperature condition；
Condenser type pressure hydrophone experiences acoustic pressure by vibration film, and the spacing of upper bottom crown changes to be become so as to cause capacitor
Change.Compared to more other kinds of pressure hydrophone, the pressure hydrophone proposed by the present invention based on MEMS technology has size small,
It is low in energy consumption, it, can be largely by oiling encapsulation with wide and with surrounding medium have many advantages, such as intrinsic impedance matching
The upper voltage endurance capability for improving sensor.Have benefited from the development of silicon micromachining technology, batch may be implemented in this type pressure hydrophone
Production, further reduces the cost.
Summary of the invention
The purpose of the present invention is to solve above-mentioned problems of the prior art, and provide a kind of based on MEMS technology
Condenser type pressure hydrophone and preparation method thereof.Hz-KHz may be implemented in 5Hz-2kHz, resistance to hydrostatic in hydrophone of the present invention
Pressure reaches the Underwater acoustic pressure measurement of 20MPa or more and sensitivity more than -160dB.
The present invention is achieved through the following technical solutions:
A kind of condenser type pressure hydrophone based on MEMS technology, including glass substrate are set at the center of the top surface of glass substrate
It is equipped with electrode under disc-shaped metallic aluminium；Cyclic annular silicon pillar is additionally provided on the top surface of glass substrate, the inner ring of cyclic annular silicon pillar is
Circular and its diameter is two times of electrode diameter under disc-shaped metallic aluminium, and the height of cyclic annular silicon pillar is higher than disc-shaped metallic aluminium
The height of lower electrode；Silica vibration film is provided at the top of cyclic annular silicon pillar, the top surface of silica vibration film
Disc-shaped metallic aluminium top electrode is provided at center, electrode under the diameter and disc-shaped metallic aluminium of disc-shaped metallic aluminium top electrode
Diameter is identical；It surrounds to form cylindrical capacitor cavity between silica vibration film, cyclic annular silicon pillar and glass substrate,
It is evenly distributed with around disc-shaped metallic aluminium top electrode there are four the round oil filler point communicated with capacitor cavity on silica vibration film,
Capacitor cavity has filled silicone oil by round oil filler point；Electrode, cyclic annular silicon pillar, dioxy under glass substrate, disc-shaped metallic aluminium
SiClx vibration film and disc-shaped metallic aluminium top electrode are all located on same axis.
As a preferred technical solution, glass substrate with a thickness of 400-500 μm；The thickness and capacitor of cyclic annular silicon pillar are empty
The height of chamber is identical, is 5-10 μm, and the diameter of cyclic annular silicon pillar inner ring is identical with the diameter of capacitor cavity, is 800-2000
μm；Silica vibration film with a thickness of 1-2 μm；Electrode and the thickness of disc-shaped metallic aluminium top electrode under disc-shaped metallic aluminium
It is 0.1-0.4 μm；The diameter of round oil filler point is 80-240 μm.
The preparation method of the present invention also provides the above-mentioned condenser type pressure hydrophone based on MEMS technology, specifically include as
Lower step:
1) photoetching is carried out to the device layer of SOI (Silicon-On-Insulator) piece, makes the figure of capacitor cavity；
2) deep silicon etching is carried out to the capacitor cavity pattern area made in step 1), etching process is until buried oxide layer, finally
Form cyclic annular silicon pillar and capacitor cavity；
3) splash-proofing sputtering metal aluminium on the glass sheet, obtains glass substrate, carries out being lithographically derived electrode figure under disc-shaped metallic aluminium later
Shape；
4) wet etching is done to the obtained glass substrate of step 3), finally obtains electrode and its metal welding under disc-shaped metallic aluminium
Disk；
5) the SOI piece that step 2 obtains and the glass substrate that step 4) obtains are subjected to anode linkage；
6) bonding pad for obtaining step 5) utilizes CMP (Chemical Mechanical Polishing, chemically mechanical polishing)
It is thinned and is polished, it is rear to be removed the silicon of the substrate layer of SOI piece completely, using buried oxide layer as etching-stop by wet etching
Layer, obtained buried oxide layer is silica vibration film；
7) the splash-proofing sputtering metal aluminium on the silica vibration film of the bonding pad of step 6) carries out being lithographically derived disc-shaped gold later
Belong to aluminium top electrode figure；
8) wet etching is done to the bonding pad of step 7), finally obtains disc-shaped metallic aluminium top electrode and its metal pad；
9) photoetching is carried out to the device that step 8) obtains, obtains the figure of oil filler point, utilizes RIE (Reactive Ion
Etching, reactive ion etching) round oiling hole pattern on etching silicon dioxide vibration film, finally obtain round oiling
Hole；
10) after scribing, silicone oil is filled into capacitor cavity from round oil filler point by way of vacuumizing.
Beneficial effects of the present invention are as follows:
1) have benefited from MEMS technology and SOI technology, the present invention can control the vibration film of capacitor in 1 microns, very greatly
The sensitivity of sensor is improved in degree, while device size can accomplish very little, be convenient for subsequent encapsulation and use；
2) compared with the materials such as common silicon, silicon nitride, the elasticity modulus of silica is small, therefore is acted on by same acoustic pressure
When, the deformation quantity that silica vibration film generates is bigger, and capacitance change is bigger, therefore is easier observation sound pressure signal；
3) design of oil filler point plays the role of pressure inside and outside balance vibration film, while guaranteeing sensitivity, largely
On improve the ability of sensor resistance to hydrostatic pressure, extend the scope of application of condenser type pressure hydrophone；
4) processing technology of the invention only includes four step photoetching, and process flow is concise, can be produced in batches and low in cost.
Detailed description of the invention
Attached drawing herein is used to provide to further explanation of the invention, constitutes part of this application, of the invention shows
Meaning property embodiment and its explanation are used to explain the present invention, not constitute improper limitations of the present invention.
Fig. 1 is that the present invention is based on the three dimensional structure diagrams of the condenser type pressure hydrophone of MEMS technology.
Fig. 2 is that the present invention is based on the D profile schematic diagrames of the condenser type pressure hydrophone of MEMS technology.
Fig. 3-Figure 11 is that the present invention is based on the simulation result diagrams of the condenser type pressure hydrophone of MEMS technology.
Figure 12 is that the present invention is based on the processing process figures of the condenser type pressure hydrophone of MEMS technology.
In figure: electrode under 1- glass substrate, 2- disc-shaped metallic aluminium, 3- ring-type silicon pillar, 4- silica vibration film,
5- disc-shaped metallic aluminium top electrode, 6- capacitor cavity, 7- circle oil filler point.
Specific embodiment
In order to make those skilled in the art better understand the present invention, below in conjunction with reference attached drawing and in conjunction with the embodiments to this
Further clear, complete explanation is made in invention.It should be noted that in the absence of conflict, embodiment in the application and
Feature in embodiment can be combined with each other.
As shown in Figure 1, 2, a kind of condenser type pressure hydrophone based on MEMS technology, including glass substrate 1, glass substrate
Electrode 2 under disc-shaped metallic aluminium is provided at the center of 1 top surface；Cyclic annular silicon pillar is additionally provided on the top surface of glass substrate 1
3, the inner ring of cyclic annular silicon pillar 3 is annular shape and its diameter is two times of 2 diameter of electrode under disc-shaped metallic aluminium, cyclic annular silicon pillar
3 height is higher than the height of electrode 2 under disc-shaped metallic aluminium；The top of cyclic annular silicon pillar 3 is provided with silica vibration film
4, disc-shaped metallic aluminium top electrode 5, disc-shaped metallic aluminium top electrode are provided at the center of the top surface of silica vibration film 4
5 diameter is identical with the diameter of electrode 2 under disc-shaped metallic aluminium；Silica vibration film 4, cyclic annular silicon pillar 3 and glass
It surrounds to form cylindrical capacitor cavity 6 between substrate 1, surrounds disc-shaped metallic aluminium top electrode 5 on silica vibration film 4
The round oil filler point 7 communicated there are four uniformly distributed with capacitor cavity 6, capacitor cavity 6 pass through round oil filler point 7 and have filled silicone oil；Glass
Electrode 2, cyclic annular silicon pillar 3, silica vibration film 4 and disc-shaped metallic aluminium top electrode under glass substrate 1, disc-shaped metallic aluminium
5 are all located on same axis.Wherein, glass substrate 1 with a thickness of 400-500 μm；The thickness and capacitor cavity of cyclic annular silicon pillar 3
6 height is identical, is 5-10 μm, and the diameter of cyclic annular 3 inner ring of silicon pillar is identical with the diameter of capacitor cavity 6, is 800-
2000μm；Silica vibration film 4 with a thickness of 1-2 μm；Electrode 2 and disc-shaped metallic aluminium top electrode under disc-shaped metallic aluminium
5 with a thickness of 0.1-0.4 μm；The diameter of round oil filler point 7 is 80-240 μm.
Condenser type hydrophone of the present invention has structure size small, and process flow is simple, high sensitivity, and it is excellent that voltage endurance capability is strong etc.
Point.The cyclic annular silicon pillar 3 and capacitor cavity 6 is formed simultaneously in dry etching device layer, considers that 6 height of capacitor cavity is right
In the influence of collapse voltage and sensitivity, the height of the thickness of cyclic annular silicon pillar 3, namely capacitor cavity 6 is designed to 5-10 μ
M, by the diameter of cyclic annular 3 inner ring of silicon pillar, namely capacitor cavity 6 diameter design at 800-2000 μm.The titanium dioxide
Silicon vibration film 4 in order to which the requirement for realizing highly sensitive should accomplish that thickness reduces as far as possible, but comprehensively considers vibration film
Influence of the thickness for collapse voltage, sensitivity and intrinsic frequency combines a possibility that technique is realized, finally by dioxy
For the thickness design of SiClx vibration film 4 at 1-2 μm, effective oscillating component of silica vibration film 4 is actually capacitor
The part on 6 chamber top of cavity, that is to say, that the diameter of effective oscillating component of silica vibration film 4 is straight with capacitor cavity 6
Diameter is identical, is all 800-2000 μm.The disc-shaped metallic aluminium top electrode 5 comprehensively considers thickness of electrode, size and opposite vibration
Influence of the position of dynamic film for sensor collapse voltage and sensitivity, finally by the thickness of disc-shaped metallic aluminium top electrode 5
It is designed as 0.1-0.4 μm, the diameter of disc-shaped metallic aluminium top electrode 5 is the half and titanium dioxide of 6 diameter of capacitor cavity
The half of the effective oscillating component diameter of silicon vibration film 4, i.e., 400-1000 μm, and it is located at silica vibration film 4
Center at.Electrode 2 is corresponding with disc-shaped metallic aluminium 5 positions of top electrode under the disc-shaped metallic aluminium, and thickness and diameter
It is equal.Round oil filler point 7 etches in buried oxide layer, takes into account oiling convenience and avoids the shadow to sensor performance as far as possible
It rings, diameter design is 80-240 μm.The high bonding sheet glass of 1 chosen material intensity of glass substrate, with a thickness of 400-
500um。
As shown in Fig. 3-Figure 11, modeling and simulation is carried out to the inventive sensor using Comsol software, to reduce
Calculation amount takes its a quarter to be modeled using the symmetry characteristic of sensor model, and model is as shown in figure 3, according to electricity is collapsed
The calculation formula of pressure:
Wherein, γ takes 0.82 to represent semi-metal, and E is the Young's modulus (7.3e10 Pa) of silica, and T answers for film residual
Power (puts aside) that v is the Poisson's ratio (0.17) of earth silicon material, and ε is permittivity of vacuum (8.854e-12 F/m), and t is
Film thickness (is taken as 1 μm), and d is capacitor cavity height (being taken as 5 μm), and a is film radius (being taken as 600 μm), can by calculating
To obtain the theoretical collapse voltage of set flowmeter sensor as 5.11V, to prevent membrane structure to be destroyed and improving biography as far as possible
The sensitivity of sensor, takes 60 the percent of collapse voltage, i.e. operating voltage of the 3.06V as sensor utilizes Comsol's
Thermal viscosity sound-structure boundary carries out static Simulation and harmonic disturbance emulation, obtains under limit in operating voltage 3.06V,
The displacement of vibration film and Stress Map and as shown in Figures 4 to 6 along the displacement curve figure of radial direction, apply vibration film
Adding frequency is 1kHz, after size is the acoustic pressure of 10Pa, according to Calculation of Sensitivity formula:
Wherein VoutFor sensor output voltage, PinFor the acoustic pressure size of application, the transducer sensitivity emulated such as Fig. 7 institute
Show, according to the calculation formula of sensor intrinsic frequency:
WhereinFor the density (2200kg/m of silica3), t is vibration film thickness, and a is film radius, and E is silica
Young's modulus, v be silica Poisson's ratio, be calculated theoretical intrinsic frequency be 7631.6Hz, obtained by emulation
Intrinsic frequency is 7626.1Hz, and simulation value is closer to theoretical value, one to quadravalence modal graph such as Fig. 8 to Figure 11 institute of sensor
Show.
The system for illustrating condenser type pressure hydrophone of the aforementioned present invention based on MEMS technology is specifically introduced below in conjunction with Figure 12
Preparation Method includes the following steps:
1) it takes SOI piece spare, as shown in a in Figure 12, photoetching then is carried out to the device layer of SOI piece, makes capacitor cavity
Figure,；
2) deep silicon etching is carried out to the capacitor cavity pattern area made in step 1), etching process is until buried oxide layer, finally
Cyclic annular silicon pillar 3 and capacitor cavity 6 are formed, as shown in the b in Figure 12；
3) it goes sheet glass spare, as shown in the c in Figure 12, then sputters one layer of metal using magnetron sputter on the glass sheet
Aluminium obtains glass substrate 1, and the one side for having sputtered metallic aluminium to glass substrate 1 later carries out photoetching, obtains under disc-shaped metallic aluminium
Electrode pattern, as shown in the d in Figure 12；
4) wet etching is done to the obtained glass substrate of step 3) 1, finally obtains electrode 2 and its metal under disc-shaped metallic aluminium
Pad, as shown in the e in Figure 12；
5) the SOI piece that step 2 obtains and the glass substrate 1 that step 4) obtains are subjected to anode linkage, as shown in the f in Figure 12；
6) bonding pad that step 5) obtains is thinned and is polished using CMP, pass through wet etching afterwards for the substrate layer of SOI piece
Silicon removal it is clean, using buried oxide layer as etch stop layer, obtained buried oxide layer is silica vibration film 4, such as Figure 12
In g shown in；
7) one layer of metallic aluminium is sputtered using magnetron sputter on the silica vibration film 4 of the bonding pad of step 6), later
The one side that para-linkage piece has sputtered metallic aluminium carries out photoetching, disc-shaped metallic aluminium top electrode figure is obtained, such as the h institute in Figure 12
Show；
8) wet etching is done to the bonding pad of step 7), finally obtains disc-shaped metallic aluminium top electrode 5 and its metal pad, such as schemed
Shown in i in 12；
9) photoetching is carried out to the device that step 8) obtains, obtains the figure of oil filler point, utilizes RIE etching silicon dioxide vibration film
Oiling hole pattern on 4 finally obtains round oil filler point 7, as shown in the j in Figure 12；
10) after scribing, silicone oil is filled into capacitor cavity from round oil filler point 7 by way of vacuumizing.
The above is that technical solution in the embodiment of the present invention is clearly and completely described, described embodiment
Only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this field
Art personnel all other embodiment obtained without creative efforts belongs to the model that the present invention protects
It encloses.
Claims (3)
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Cited By (7)
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| CN111678585A (en) * | 2020-06-18 | 2020-09-18 | 中北大学 | A kind of high-sensitivity AlN piezoelectric hydrophone and preparation method thereof |
| CN111807313A (en) * | 2020-06-18 | 2020-10-23 | 中北大学 | A MEMS piezoelectric hydrophone based on anodic bonding technology and preparation method thereof |
| CN112517361A (en) * | 2020-11-30 | 2021-03-19 | 国网山西省电力公司朔州供电公司 | High-sensitivity multi-band combined type air-coupled ultrasonic transducer and preparation method thereof |
| CN114852953A (en) * | 2022-04-15 | 2022-08-05 | 中北大学 | MEMS vector hydrophone-oriented CMOS release method after cross beam sensitive structure |
| CN116374941A (en) * | 2023-04-06 | 2023-07-04 | 西北工业大学 | Sapphire-based suspended film optical fiber F-P cavity MEMS sound pressure sensor and its preparation method |
| CN117213616A (en) * | 2023-11-09 | 2023-12-12 | 中北大学 | Piezoelectric hydrophone unit with stress release structure |
| CN119697559A (en) * | 2024-12-14 | 2025-03-25 | 西安交通大学 | A detachable spider web-type high-sensitivity flexoelectric hydrophone structure and manufacturing method |
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| CN111678585A (en) * | 2020-06-18 | 2020-09-18 | 中北大学 | A kind of high-sensitivity AlN piezoelectric hydrophone and preparation method thereof |
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| CN117213616B (en) * | 2023-11-09 | 2024-01-26 | 中北大学 | A piezoelectric hydrophone unit with a stress relief structure |
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