CN109861753A - Based on InGaN microns of LED photovoltaic detector arrays and its application - Google Patents
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Abstract
Based on InGaN microns of LED photovoltaic detector arrays, including substrate, and in substrate array distribution multiple microns of LED components, the basic structure of each micron of LED component is n-GaN, InGaN/GaN Quantum Well, p-GaN epitaxial layer structure, each micron of LED component size is equal or unequal, for arbitrary shape, for the size of typical circle micron LED from 1 micron to 500 micron, the substrate of micron LED is any substrate.Furthermore the photodetector array can also be used to display, illumination and solar battery.Photodetector array of the invention can be used in high-speed parallel visible light communication, and prove there is the lower bit error rate to number Gbps in several Mbps by 1-100 μm of various sizes of photodetector array.Micron LED can either be used for the ballistic device and receiving device of high speed optical communication, and the transmitting data in parallel that can be realized, while can also convert electric current for the optical signal received, use as solar battery, realize self-powered.
Description
Technical field
The present invention relates to visible light communication fields, specifically, being related to a kind of based on InGaN microns of LED photovoltaic detector arrays
Column, can be applied to the ballistic device, receiving device and self-powered solar cell device of high-speed parallel visible light communication.
Background technique
As wireless communication needs unprecedentedly increase, traditional communication based on limited radio spectrum, such as 3G/4G is faced with
Support the challenge of high-speed communication demand.Therefore, it is necessary to utilize new Radio Transmission Technology, and wireless light communication is verified has
Frequency spectrum resource, high security, high privacy, the advantages that anti-electromagnetic interference capability is strong are not needed to buy.Due to solid state illumination technology
Rapid development, the research of especially gallium nitride (GaN) achieve significant achievement, and the visible light based on LED and laser technology is logical
Believe that (VLC) due to that can provide illumination and communication simultaneously, causes the great interest of people, can be applied to high accuracy positioning, room
The plurality of application scenes such as interior positioning.However, the technological challenge of visible light communication first is that the low modulation bandwidth of commercial high power LED
(several MHz) limits achievable data rate, and in order to overcome the problems, such as this, researcher has carried out a large amount of improvement to mention
High modulation bandwidth and data rate.Such as researcher filters out the yellow light of the phosphor powder of low-response using blue filter,
And use the balancing technique including preequalization and post-equalization.
The LED (micron LED) of emerging micron dimension has the advantages that high traffic rate and to realize parallel communications, because
This, how based on micron LEDs with improve visible light communication transmission rate become the prior art urgent need to resolve the technical issues of.
Summary of the invention
It is a kind of based on InGaN microns of LED photovoltaic detector arrays and its application, Neng Gouti it is an object of the invention to propose
The traffic rate of high visible communication, and reduce the interference between different visible light communication channel.
To achieve this purpose, the present invention adopts the following technical scheme:
One kind is based on InGaN microns of LED photovoltaic detector arrays, including substrate, and in substrate array distribution it is more
A micron of LED component, the basic structure of each micron of LED component are n-GaN, InGaN/GaN Quantum Well, p-GaN epitaxial layer knot
Structure, each micron of LED component size is equal or unequal, and each micron of LED component is having a size of arbitrary shape, including circle
Shape, rectangular, polygon, the size of micron LED is from 1 micron to 100 micron.
Optionally, the substrate of the micron LED component is Sapphire Substrate, silicon substrate, GaN substrate, SiC substrate or soft
Property PET substrate.
Optionally, the size of the micron LED component is from 5 microns to 50 micron.
Optionally, as the light emitting devices of visible light communication, the 3dB modulation bandwidth of each micron of LED is from several MHz to number
GHz；As the light-detecting device of visible light communication, the 3dB modulation bandwidth of each micron of LED is from several MHz to several hundred MHz.
It is logical using the above-mentioned visible light based on InGaN microns of LED photovoltaic detector arrays that the invention also discloses a kind of
T unit successively includes:
Multiple laser diodes, multiple lens and it is described be based on InGaN microns of LED photovoltaic detector arrays, wherein often
A laser diode forms individual visible light communication channel.
Micro-LED is listed in based on InGaN microns of LED photovoltaic detector arrays using above-mentioned the invention also discloses a kind of
Application in array.
Solar-electricity is listed in based on InGaN microns of LED photovoltaic detector arrays using above-mentioned the invention also discloses a kind of
Application in pond.
The invention also discloses a kind of using above-mentioned based on InGaN microns of LED photovoltaic detector arrays as self-powered
Photodetector application.
It is therefore, of the invention that based on InGaN microns of LED photovoltaic detector arrays to can be used in high-speed parallel visible light logical
Letter, and pass through 100 μm, 60 μm and 40 μm of various sizes of photodetector battle array of the size between 1 micron to 100 microns
Column prove there is the lower bit error rate in 180Mbps, 175Mbps and 185Mbps, can either be used for high speed optical communication, and can
Realize transmitting data in parallel.
Detailed description of the invention
Fig. 1 is the structure chart based on InGaN microns of LED according to a particular embodiment of the invention；
Fig. 2 is the structural representation based on InGaN microns of LED photovoltaic detector arrays according to a particular embodiment of the invention
Figure；
Fig. 3 is according to a particular embodiment of the invention using based on InGaN microns of LED photovoltaic detector arrays progress lists
The structure chart of the experimental provision of channel visible light communication；
Fig. 4 is the electric current and electricity based on InGaN microns of LED photovoltaic detector arrays according to a particular embodiment of the invention
Press (current-voltage) performance plot；
Fig. 5 is the experimental eye figure of single channel visible light communication according to a particular embodiment of the invention；
Fig. 6 is the utilization of another specific embodiment according to the present invention based on InGaN microns of LED photovoltaic detector arrays
Carry out the structure chart of the experimental provision of multichannel visible light communication；
Fig. 7 is the electricity based on InGaN microns of LED photovoltaic detector arrays of another specific embodiment according to the present invention
Stream and voltage (current-voltage) performance plot；
Fig. 8 is the experimental eye figure of another specific embodiment according to the present invention；
Fig. 9 is the structure chart of the experimental provision of duplexing visible light communication according to a particular embodiment of the invention；
Figure 10 is the electric current and voltage (electric current-of the duplexing visible light communication of another specific embodiment according to the present invention
Voltage) performance plot；
Figure 11 is detection receiving end of 40 μm of the micron LED photovoltaic array device based on InGaN as uplink
Frequency response curve；
Figure 12 is that 40 μm of the micron LED photovoltaic array device based on InGaN is rung as the frequency of downlink transmission end
Answer curve graph.
The technical characteristic in appended drawing reference the respectively referred to generation in figure are as follows:
1, Signal coding and input unit；2, laser diode；3, lens element series；4, micron LED photovoltaic detector array；
5, signal decoding and output unit；6, transmitting micron LED array；7, photodetector.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention rather than limiting the invention.It also should be noted that in order to just
Only the parts related to the present invention are shown in description, attached drawing rather than entire infrastructure.
The present invention, which essentially consists in, is utilized a micron characteristic for LED high-speed communication, while multiple microns of LED being arranged on substrate
Array is formed, micron LED size is smaller, is capable of forming multiple and different visible light communications (VLC) channel and has each other
Lesser interference.
Referring to Fig. 1, the structure based on InGaN microns of LED is shown, Fig. 2 shows be based on InGaN microns of LED light electrical resistivity surveys
Survey device array.
One kind is based on InGaN microns of LED photovoltaic detector arrays, including substrate, and in substrate array distribution it is more
A micron of LED component, the basic structure of each micron of LED component are n-GaN, InGaN/GaN Quantum Well, p-GaN epitaxial layer knot
Structure, each micron of LED component size is equal or unequal, and size is from 1 micron to 100 micron.
In an alternative embodiment, the substrate of the micron LED component is Sapphire Substrate, silicon substrate, GaN lining
Bottom, SiC substrate, any substrate such as flexible PET substrate.
Therefore, because micron LED component has the communication characteristic of high speed, the visible light communication of high speed can be suitable for, and
And micron LED has smaller size, can form multiple visible light communication channels in effective area, reduce different letters
Interference between road.
In a preferred embodiment, the size of the micron LED component is from 5 microns to 50 micron.
Each micron of LED as light emitting devices 3dB modulation bandwidth from several MHz to several GHz, as light receiving element
3dB modulation bandwidth is from several MHz to hundreds of MHz, while the light received can also be converted to electric current by micron LED, play the sun
The effect of energy battery, realizes self-powered.
Embodiment 1:
Referring to Fig. 3, the utilization shown according to a particular embodiment of the invention is detected based on InGaN microns of LED photovoltaics
Device array carries out the structure chart of the experimental provision of single channel visible light communication.
The experimental provision includes Signal coding and input unit 1, such as waveform generator, voice signal, vision signal, is used
In providing communication signal source；Laser diode 2 is used as transmitting terminal, for sending visible light, outside laser diode and micron LED
Photodetector has lens element series 3, collimates to transmitting light, is focused to light is received；Light is incident on a micron LED photovoltaic
Detector array 4 carries out light-receiving, signal decoding and output unit 5, such as oscillograph, voice signal and video signal decoding list
Member, the signal received to micron LED photovoltaic detector array 4 detect.
In the present embodiment, logical for single channel visible light as optical transmitting set using the laser diode of a 405nm
Letter；Experiment uses on-off keying (OOK) modulation scheme, and modulated transmitting light passes through 1m free space Distance Transmission；In laser
There are lens element series 3 between diode and micron LED light electric explorer, transmitting light is collimated, be focused to light is received；
Diameter is used to carry out light-receiving for 100 μm of micron LED photovoltaic detector array 4 in the present embodiment, signal decoding and output are single
Member 5, such as the signal that oscillograph receives micron LED photovoltaic detector array 4 detect, and assess VLC by Error Detector
Performance, including bit error rate (BER) and eye figure.Invention is not limited thereto, can be based on different sizes (1-100 μm)
InGaN microns of LED photovoltaic detector arrays carry out single channel or multi-channel MIMO visible light communication.
In an experiment, micron LED photovoltaic detector array 4 can use different size, for example diameter is 100 μm, 60 μm
With 40 μm of micron LED, without exterior lighting, the power density of laser diode is 11.1W/ square centimeters.
Referring to fig. 4, electric current and voltage (electric current-based on above-mentioned InGaN microns of LED photovoltaic detector array are shown
Voltage) performance plot.The micron LED light electric explorer for the use of Keithley 2614B current source test diameter being 100 μm, is not having
Illumination and there is illumination (power density 11.0W/cm2) under the conditions of I-E characteristic.As can be seen that when no light, -5V
Dark current under bias is 10-12A magnitude, dark current under zero-bias is down to 10-14A magnitude.When illumination, it is based on 100 μm of InGaN
The photoelectric current of micron LED photovoltaic detector array reaches 10-4A magnitude.Illustration is the current -voltage curve figure of linear coordinate, can
To see that the InGaN micron LED light electric explorer based on 100 μm has apparent photovoltaic property, open-circuit voltage 0.26V is short
Road electric current is 188.0 μ A.
The micron LED photovoltaic detector array that Fig. 5 shows 100 μm is used for visible light communication as receiving end, is captured
Transmission rate be 110Mbps eye figure.The error ratio characteristic under different transmission rate is tested, when the bit error rate is lower than forward error correction threshold
Value 3.8 × 10-3When, as receiving end, obtainable maximum transmission rate is single InGaN microns of LED light electric explorer
180Mbps。
Embodiment 2:
Referring to Fig. 6, utilization according to a particular embodiment of the invention is shown based on above-mentioned InGaN microns of LED photovoltaic
Array device carries out the structure chart of the experimental provision of multichannel (2 × 2MIMO) visible light communication.
The experimental provision includes Signal coding and input unit 1, such as waveform generator, for providing parallel communication signals
Source；Multiple laser diodes 2, for sending visible light；Lens element series 3 detect transmitting light collimation focusing to micron LED photovoltaic
4 receiving end of device array.
In the present embodiment, using the laser diode of two 405nm as optical transmitting set for binary channels (2 ×
2MIMO) visible light communication；Experiment uses the high speed parallel communication of on-off keying (OOK) modulation scheme, and modulated transmitting light is logical
Cross 1m free space Distance Transmission；There are lens element series 3 between each laser diode and micron LED light electric explorer, it is right
Transmitting light is collimated, and is focused to light is received；Two 60 μ of micron LED photovoltaic detector array 4 are used in the present embodiment
M pixel array carries out light-receiving, signal decoding and output unit 5, such as oscillograph receives micron LED photovoltaic detector array 4
To signal detected.Pass through the electricity of Error Detector and ophthalmograp analysis and test micron LED photovoltaic detector array conversion
Signal, to assess the performance of VLC, including bit error rate (BER) and eye figure.Invention is not limited thereto, can be based on InGaN
The pixel of the micron similar and different size of LED photovoltaic detector array (1-100 μm) carries out multichannel (n × m MIMO) visible light
Communication,
Referring to Fig. 7, electric current and voltage (electric current-based on above-mentioned InGaN microns of LED photovoltaic detector array are shown
Voltage) performance plot.Using Keithley2614B current source to 60 μm of diameter of micron LED photovoltaic detector array, in no light
According to have illumination (illuminating power density 11.0W/cm2) under the conditions of measure its I-E characteristic.It can be seen from the figure that
60 μm of measured micron LED photovoltaic detector arrays, -- at the reverse bias of 5V, dark current 10-12A magnitude.Illumination
Under, photoelectric current measured by the micron LED photovoltaic detector array that diameter is 60 μm reaches 10-5A magnitude.Illustration is linear coordinate
Current -voltage curve figure, it can be seen that based on 60 μm of InGaN micron LED light electric explorers have apparent photovoltaic property,
Open-circuit voltage is 0.26V, and short circuit current is 64.6 μ A.
Experiment measures the bit error rate under its different transmission rates for the micron LED photovoltaic detector array of 60 μ m diameters
Characteristic curve, it can be seen that obtainable maximum data rate is up to 175Mbps, and the corresponding bit error rate is 3.7 × 10-3.Fig. 8 is shown
60 μm of micron LED photovoltaic detector array is listed in the eye figure that transmission rate is 89Mbps.
Embodiment 3
Referring to Fig. 9, utilization according to a particular embodiment of the invention is shown based on above-mentioned InGaN microns of LED photovoltaic
Detector array carries out the structure chart of the experimental provision of duplexing visible light communication.
The experimental provision includes uplink and downlink.Signal coding and input unit 1, such as waveform generator,
For providing uplink communication signal source；Laser diode 2, for sending visible light；Lens element series 3, by transmitting light collimation
Micron 4 receiving end of LED photovoltaic detector array is focused on, the signal through the conversion of micron LED light electric explorer decodes and output is single
Member 5, such as signal oscillograph 5 are shown and analyze.Downlink, another Signal coding and input unit 1, such as waveform
Generator, for emitting downlink signal；Transmission uses micron LED array 6 as transmitting terminal, for sending visible light；Lens element series
3, by transmitting light collimation focusing to 7 receiving end of photodetector array of APD/PIN, receiving end signal is shown to another letter
Number decoding and output unit 5 analyzed such as oscillograph 5.
In the present embodiment, uplink is used for visible light as optical transmitting set using the laser diode 2 of a 405nm
Communication；Experiment uses on-off keying (OOK) modulation scheme, and modulated transmitting light passes through 1m free space Distance Transmission；Swashing
There are lens element series 3 between optical diode and micron LED light electric explorer, transmitting light is collimated, gather to light is received
It is burnt；Diameter is used to carry out light as the receiving end of uplink for 40 μm of micron LED photovoltaic detector array 4 in the present embodiment
It receives；Work is under zero bias when micron LED array is as photodetector in the present embodiment；5 pairs of micron LED light electrical resistivity surveys of oscillograph
It surveys the signal that device array 4 receives to be detected, and VLC performance is assessed by Error Detector.Downlink uses 40 μm of micron LED
Array carries out visible light communication as transmitting terminal；Micron LED array as transmitting terminal when, work under forward bias (40mA,
6V)；Experiment uses on-off keying (OOK) modulation scheme, by identical link；Under being used as in the present embodiment using APD 430
The receiving end of line link has lens element series 3 between 430 photodetector of micron LED array and APD, carries out to transmitting light
Collimation；7 progress light-receiving, another oscillograph 5 on 430 photodetector of APD is focused to reception light to connect detector
The signal received is detected, and assesses VLC performance, including bit error rate (BER) and eye figure by Error Detector.The present invention is not
As limit, the InGaN micron LED photovoltaic detector array of different sizes (1-100 μm), transmitting terminal and receiving end can be based on
Micron LED array (identical or different size) can be used to carry out duplexing visible light communication simultaneously.
Referring to Figure 10, electric current and voltage (electric current-electricity based on above-mentioned InGaN microns of LED photovoltaic array device are shown
Pressure) performance plot.The micron LED light electric explorer for the use of Keithley 2614B current source test diameter being 40 μm, in no light
According to have the illumination (11.0W/cm of power density2) under the conditions of I-E characteristic.As can be seen that -5V is inclined when no light
The dark current of pressure is 10-12A magnitude, dark current under zero-bias is down to 10-14A magnitude.It is micro- based on 40 μm of InGaN when illumination
The photoelectric current of rice LED photovoltaic detector array reaches 10-5A magnitude.Illustration is the current -voltage curve figure of linear coordinate, can be with
Seeing has apparent photovoltaic property, open-circuit voltage 0.26V based on InGaN microns of LED light electric explorers, and short circuit current is
27.4μA。
Experiment for 40 μm of micron LED photovoltaic array device analyze respectively its be used for uplink photodetector and
The bit error rate and transmission rate characteristic of downlink photo-electroluminescence diode, the maximum data rate respectively reach 185Mbps and
667Mbps, the corresponding bit error rate are respectively 3.5 × 10-3With 3.7 × 10-3.Figure 11, Figure 12 are respectively illustrated based on above-mentioned 40 μm
InGaN micron LED photovoltaic array device as uplink detection receiving end and downlink transmission end frequency response
Curve graph, bandwidth are respectively 34.3MHz and 180.2MHz.
It is above obtained to be listed in visible light communication field the result shows that being based on InGaN microns of LED photovoltaic detector arrays
With very big potentiality.
Therefore, the invention also discloses a kind of using above-mentioned visible based on InGaN microns of LED photovoltaic detector arrays
Optical communication apparatus successively includes:
Multiple laser diodes, lens element series and above-mentioned based on InGaN microns of LED photovoltaic detector arrays, wherein
Each laser diode forms individual visible light communication channel.
It is therefore, of the invention that based on InGaN microns of LED photovoltaic detector arrays to can be used in high-speed parallel visible light logical
Letter, and being proved by 100 μm, 60 μm and 40 μm of various sizes of photodetector array in 180Mbps, 175Mbps with
185Mbps has the lower bit error rate, can either be used for high speed optical communication, and can be realized parallel transmission.
In addition, of the invention, based on InGaN microns of LED photovoltaic detector arrays to can also be used to micro-LED array aobvious
Show, multiple applications such as solar battery.
The Micro-LED gusts of high speed signal transmitting terminals that can be used for parallel visible light communication and receiving end, and and micro-
LED shows, illuminates using combination；For solar battery, self-powered, power supply packet can be carried out while visible light communication
Free space power supply and underwater power are included, becomes a kind of self-powered photodetector, applied to unattended adverse circumstances
Or the detection of extreme environment.In addition, the array photodetectors based on InGaN microns of LED have good spectral selection,
The high-speed communication of commercial white light LEDs is realized in the case where not needing additional optical filter.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that
A specific embodiment of the invention is only limitted to this, for those of ordinary skill in the art to which the present invention belongs, is not taking off
Under the premise of from present inventive concept, several simple deduction or replace can also be made, all shall be regarded as belonging to the present invention by institute
Claims of submission determine protection scope.
Claims (8)
1. being based on InGaN microns of LED photovoltaic detector arrays, it is characterised in that:
Including substrate, and in substrate array distribution multiple microns of LED components, the basic structure of each micron of LED component
For n-GaN, InGaN/GaN Quantum Well, p-GaN epitaxial layer structure, each micron of LED component size is equal or unequal,
Each micron of LED component is having a size of arbitrary shape, including round, rectangular, polygon, and the size of micron LED is from 1 micron to 100
Micron.
2. according to claim 1 be based on InGaN microns of LED photovoltaic detector arrays, it is characterised in that:
The substrate of the micron LED component is Sapphire Substrate, silicon substrate, GaN substrate, SiC substrate or flexible PET substrate.
3. according to claim 1 be based on InGaN microns of LED photovoltaic detector arrays, it is characterised in that:
The size of the micron LED component is from 5 microns to 50 micron.
4. according to claim 1 be based on InGaN microns of LED photovoltaic detector arrays, it is characterised in that:
When light emitting devices of the photodetector array as visible light communication, the 3dB modulation bandwidth of each micron of LED
From several MHz to several GHz；When light-detecting device of the photodetector array as visible light communication, each micron of LED's
3dB modulation bandwidth is from several MHz to several hundred MHz.
5. a kind of using visible based on InGaN microns of LED photovoltaic detector arrays described in any one of claim 1-4
Optical communication apparatus successively includes:
Multiple laser diodes, multiple lens and it is described be based on InGaN micron LED photovoltaic detector arrays, wherein each sharp
Optical diode forms individual visible light communication channel.
6. a kind of based on being listed in described in any one of claim 1-4 based on InGaN microns of LED photovoltaic detector arrays
Application in micro-LED array.
7. a kind of based on being listed in the sun based on InGaN microns of LED photovoltaic detector arrays described in any one of claim 1-4
Application in energy battery.
8. it is a kind of based on described in any one of claim 1-4 based on InGaN microns of LED photovoltaic detector arrays be used as from
The application of the photodetector of power supply.
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| CN113314561A (en) * | 2021-05-27 | 2021-08-27 | 复旦大学 | Deep ultraviolet band light-emitting monolithic integrated device and preparation method thereof |
| CN115274939A (en) * | 2022-06-25 | 2022-11-01 | 苏州大学 | Preparation method of Micro-LED device |
| CN115998254A (en) * | 2022-12-26 | 2023-04-25 | 复旦大学 | Skin color detection device based on micro-LED and preparation method thereof |
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