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CN100342274C - Method for manufacturing reflective substrate and liquid crystal display device - Google Patents

Method for manufacturing reflective substrate and liquid crystal display device Download PDF

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Publication number
CN100342274C
CN100342274C CNB2005100027679A CN200510002767A CN100342274C CN 100342274 C CN100342274 C CN 100342274C CN B2005100027679 A CNB2005100027679 A CN B2005100027679A CN 200510002767 A CN200510002767 A CN 200510002767A CN 100342274 C CN100342274 C CN 100342274C
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China
Prior art keywords
metal layer
layer
liquid crystal
substrate
reflective
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CNB2005100027679A
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CN1632658A (en
Inventor
陈建宏
辛龙宝
蔡明晏
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AUO Corp
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Quanta Display Inc
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Abstract

The invention relates to a manufacturing method of a reflective substrate and a liquid crystal display device, comprising the following steps: providing a substrate having a first metal layer on a surface thereof, wherein the first metal layer is formed of at least one soft metal or an alloy thereof; and (b) forming an aluminum nitride layer on the first metal layer; the invention can simultaneously complete the metal reflecting layer with the rough surface by using a single step, thereby greatly reducing the manufacturing time and the cost of money.

Description

A kind of manufacture method of reflective substrate and liquid crystal indicator
Technical field
The present invention relates to a kind of manufacture method and liquid crystal indicator of reflective substrate, it is particularly related to a kind of liquid crystal indicator with coarse reflection horizon.
Background technology
The display mode of liquid crystal indicator mainly is divided into four kinds: reflective, reflection and transmission change type, projection-type and transmission liquid crystal display device; Except that reflective LCD device, mostly general liquid crystal indicator is to adopt transmissive liquid crystal panel, its light source mainly is the backlight that relies on the liquid crystal panel back, could allow LCD produce brightness, and because the brightness of penetration is certain amount, so under the strong illumination of sunshine, the amount of screen reflection surface light will be covered picture signal, cause the data on the screen not see Chu on the contrary.
Reflective LCD device itself is not luminous, is to inject in the liquid crystal panel by the light source in the space of living in, light is reflexed in people's the eye by its reflecting plate again; Because reflective liquid-crystal display does not adopt the transmission-type principle, do not need backlight, do not need the fluorescent tube design, as long as, just can directly produce brightness as daylight lamp, sunshine by extraneous light source, therefore, extraneous light source is stronger, and its brightness is higher, so distinguishes outside the room that looking property and reflecting effect are splendid, can break through power consumption restriction, make that LCD can be done gentlyer, thinner, more power saving, more can under bright environment, use.
General reflective liquid-crystal display is to cover on the infrabasal plate surface to add a reflector material, and as aluminium or chromium etc., and the surface forms and coarsely or concavo-convex makes reflecting effect better.As adhering to a smooth minute surface as reflecting plate on the back inwall of produced liquid crystal groove, the observer will see the image that reflects own face from the LCD plate, and this is the direct reflection phenomenon.If well-regulated convex-concave ripple is made on the surface of reflecting plate, when incident white light on reflecting plate, what then reflect is again the light of multiple colour, this surface is just the same with diffraction grating in the spectroscope, produces identical phenomenon, in order to address this problem, just eliminate reflection angle and light wavelength correlated phenomena, need to have on the reflecting plate surface structure of irregular convex-concave, this moment, reflected light both comprised normal reflection light, and composition also diffuses.
United States Patent (USP) case numbers 4,106, in 859, people such as Doriguzzi disclose the shaggy method of a kind of manufacturing organic layer, it mainly is mode with pressing mold, as shown in Figure 1a, the organic layer 120 of otherwise flat with a mould 110 that has a male and fomale(M﹠F), is formed the organic layer with male and fomale(M﹠F) under the P that exerts pressure; Or shown in Fig. 1 b, utilize cylinder type to have the mould 130 of convex-concave surface, the organic layer 120 of otherwise flat is extruded the organic layer of tool by male and fomale(M﹠F) with roll mode.Except the pressing mold mode, United States Patent (USP) case numbers 4,519, in 678, people such as Komatsubara then directly form a plurality of projection patterns 210 on substrate 200, apply one deck resin bed 220 again on substrate and projection, and layer of metal layer 230, therefore promptly finish metal level, as shown in Figure 2 with convex-concave surface.
In addition, people such as Oh are then in United States Patent (USP) case numbers 5,917,567 have disclosed the method for another kind of formation rough surface, shown in Fig. 3 a to Fig. 3 c, at first with a plurality of granular septs 321 and polymer solution 322 mixings, the polymer solution 322 that will contain granular sept 321 in the mode of rotary coating is coated on the substrate 320 again, form the thin layer of a rough surface through baking, the pixel electrode 324 that then has reflecting effect more thereon with sputtering way formation one, material such as aluminium or silver, and can form pixel electrode 324 with rough surface; In addition, a plurality of granular septs 321 also can place on the substrate 320 in advance, are coated with to toast after being covered with polymer solution 322, to reach the making of rough surface again.
Yet, aforesaid way is with mechanical pressing mold, or the existence that utilizes sept causes the coarse of surface, all must be after forming a rough layer, just form a reflective metal layer, this program will cause the loaded down with trivial details of step, and therefore its inconvenience arranged when a large amount of production, if can metallic reflector can be finished simultaneously with one step, the time and the money cost of making can be reduced greatly with rough surface.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method and liquid crystal indicator of reflective substrate, especially be used in the metal level of making rough surface, as long as on metal level, add nitrogen, atom will be because of the existence of nitrogen-atoms in the metal level, and cause the metallic atom lattice to change, cause the material of metal level own to be rough uneven surface because of pushing, the mode that this processing procedure is more generally habitually practised is more easy.
The manufacture method of a kind of reflective substrate of the present invention comprises that step is as follows:
(a) transparency carrier that provides a surface to have a first metal layer, wherein said the first metal layer is formed by at least one soft alloy or its alloy; And
(b) form an aln layer on described the first metal layer.
After finishing the inventive method abovementioned steps, can then carry out follow-up necessary step, or then carry out another step (c), remove the aln layer on the first metal layer, carry out subsequent step, for example formation of transparent conductive layer afterwards again.Or can be optionally, in directly depositing a reflection horizon, and carry out follow-up processing by rough uneven surface (aluminium nitride).Owing to be the first metal layer on the substrate in the reflective substrate in order to the structure of reflection, therefore, the first metal layer is preferably has light reflective, in addition, the soft alloy kind that is suitable for making the first metal layer is not limit, can be the soft alloy of any tool reflection characteristic of habitually practising, be preferably aluminium, silver, nickel, copper or platinum; In addition,, can between the first metal layer and substrate, form a cushion, in successive process, cause phenomenon with strippable substrate because of High Temperature High Pressure to avoid the first metal layer for increasing the adhesion between the first metal layer and the substrate; The cushioning layer material that is suitable for can be the material of habitually practising, and is preferably titanium, titanium nitride, molybdenum, chromium or its alloy.In the inventive method, the mode that the aln layer of step (b) forms can be any deposition process of habitually practising, is preferably to contain the aluminium surface one and carry out reactive sputter or evaporation; And the thickness range that aln layer forms is not limit, and is preferably 150-1500 .
The present invention also provides a kind of liquid crystal indicator, comprising: one contains the infrabasal plate of the first metal layer, and wherein this first metal layer has the rough surface of a light reflective, and this first metal layer is formed by at least one soft alloy or its alloy; One upper substrate, its surface has at least one transparency electrode; And a liquid crystal layer, it is between described infrabasal plate and described upper substrate.
In liquid crystal indicator of the present invention, at least one soft alloy can be the soft alloy of any tool reflection characteristic of habitually practising, and is preferably aluminium, silver, nickel, copper or platinum; In addition, the structure of upper substrate also comprises a color filter film, be folded between upper substrate and the transparency electrode, and transparent electrode material is well known materials, is preferably tin indium oxide or indium zinc oxide; Liquid crystal layer is a well known materials, is preferably negative dielectric anisotropy liquid crystal or positive dielectric anisotropic liquid crystals.
Liquid crystal indicator of the present invention optionally also is provided with functional assembly to increase or to improve its function, its preferable enforcement can be provided with a plurality of image signal lines in the infrabasal plate surface, scan signal wire, common line (common lines) and counter electrode, wherein these image signal lines and these scan signal wire and form an arranged, and per two adjacent image signal lines and per two adjacent scanning define a pixel region between signal wire, in same pixel region, being positioned at the borderline wherein image signal line of pixel region is connected with the source electrode of position at a thin film transistor (TFT) of this pixel region, be positioned at that pixel region is borderline wherein one to be scanned signal wire and be connected with the grid of position at a thin film transistor (TFT) of this pixel region, and the drain electrode of the thin film transistor (TFT) that the pixel electrode in the pixel region and same pixel region are interior is connected, described common line and described counter electrode join with control voltage, described pixel electrode and described counter electrode be for being staggered, and the terminal point of pixel electrode and counter electrode and starting point are positioned at a side of this pixel region.
Description of drawings
Fig. 1 a and Fig. 1 b are the prior art synoptic diagram;
Fig. 2 is the prior art synoptic diagram;
Fig. 3 a to Fig. 3 c is the prior art synoptic diagram;
Fig. 4 a to Fig. 4 c is the synoptic diagram of the present invention's first preferred embodiment;
Fig. 5 a to Fig. 5 c is the synoptic diagram of the present invention's second preferred embodiment;
Fig. 6 a to Fig. 6 d is the synoptic diagram of the present invention's the 3rd preferred embodiment.
The primary clustering symbol description:
Pressure P mould 110 organic layers 120
Mould 130 substrates 200 projection patterns 210
Resin bed 220 metal levels 230
Substrate 320 granular sept 321 polymer solutions 322
Pixel electrode 324
Substrate 10 cushions 11 aluminum metal layers 20
Aln layer 30 reflection horizon 40 transparent conductive layers 50
Embodiment
Embodiment one
Please refer to Fig. 4 a, a substrate 10 at first is provided, in this preferred embodiment, the substrate that uses is glass substrate 10; Form a thick metal layers 20 as the first metal layer in substrate 10 surface depositions afterwards, this metal level can be aluminum metal or the mild alloy that contains aluminium, and this preferred embodiment is an aluminum metal layer 20.In addition, for increasing the adhesion between aluminum metal layer 20 and the glass substrate 10, can between aluminum metal layer 20 and glass substrate 10, more form a cushion 11, in subsequent technique, cause the phenomenon of peeling off with glass substrate 10 because of High Temperature High Pressure to avoid aluminum metal layer 20; The cushioning layer material that is suitable for can be the material of habitually practising, and is preferably titanium, titanium nitride, molybdenum, chromium or its alloy; In this preferred embodiment, be titanium coating 11.The formation method of aluminum metal layer 20 can be any habitual deposition process or formation method, in this preferred embodiment, is to use the sedimentation of sputter.Then, as Fig. 4 b, in the vacuum splashing and plating chamber, form an aln layer 30 on aluminum metal layer 20.The formation of aln layer 30 can be any habitual formation method, and in this preferred embodiment, aln layer 30 is to form with reaction sputtering method deposition under nitrogen environment.
When aluminium nitride forms in this preferred embodiment, existence because of nitrogen-atoms, to cause the metallic atom lattice to change, cause aluminum metal layer 20 materials own to be pushed and be rough uneven surface because of metallic atom, thereby forming the surface structure of an irregular convex-concave naturally, it can be used as subsequent reflection surface or the conductive layer of follow-up increase or the substrate of other layer.
In this preferred embodiment, directly on aln layer 30, form at last a transparent conductive layer 50 (ITO for example, IZO), as Fig. 4 c.
Embodiment two
Because the reflecting effect of aluminium nitride 30 is relatively poor, so present embodiment forms a reflection horizon 40 again on aluminium nitride 30.
Please refer to Fig. 5 a, on a glass substrate 10 surfaces, deposition forms the titanium coating 11 and an aluminum metal layer 20 of buffering in regular turn; Then, as Fig. 5 b, in the vacuum splashing and plating chamber, form an aluminium nitride 30 on aluminum metal layer 20 with the sedimentation of sputter, this moment, aluminum metal layer 20 will form the surface structure of an irregular convex-concave naturally.
Directly forming a reflection horizon 40 on aln layer 30, is aluminium lamination in this preferred embodiment; (ITO for example is IZO) on reflection horizon 40, as Fig. 5 c to form a transparent conductive layer 50 at last.
Embodiment three
Another embodiment of the present invention then is after forming aln layer 30, and aln layer 30 is removed, and then can present the aluminum metal layer 20 that forms uneven surface, directly as the reflection horizon, and then carries out each subsequent step.
Please refer to Fig. 6 a, a glass substrate 10 is provided equally, on substrate 10 surfaces, deposition forms the titanium coating 11 and an aluminum metal layer 20 of buffering in regular turn again; Then, as Fig. 6 b, in the vacuum splashing and plating chamber, form an aln layer 30 on aluminum metal layer 20 with the sedimentation of sputter.Equally when aln layer 30 is formed on the aluminum metal layer 20, existence because of nitrogen-atoms, and push aluminum metal layer 20 inner atoms, and form the surface structure of an irregular convex-concave naturally, and after aln layer 30 removed with any conventional process, still can make the aluminum metal layer 20 of retention present convex-concave surface, as Fig. 6 c; In this preferred embodiment, aln layer 30 is that the method with etching removes; Last again on the aluminum metal layer 20 of convex-concave directly formation one transparent conductive layer 50 (ITO for example, IZO), as Fig. 6 d.
The foregoing description only is to give an example for convenience of description, and the interest field that the present invention advocated is from should but not only limiting to the foregoing description with described being as the criterion of claims scope of application.

Claims (11)

1.一种反射式基板的制造方法,其特征在于包括步骤如下:1. A method for manufacturing a reflective substrate, characterized in that it comprises the following steps: (a)提供一表面具有一第一金属层的透明基板,其中所述的第一金属层由至少一软性金属或其合金所形成;以及(a) providing a transparent substrate having a first metal layer on its surface, wherein said first metal layer is formed of at least one soft metal or an alloy thereof; and (b)形成一氮化铝层于所述的第一金属层上。(b) forming an aluminum nitride layer on the first metal layer. 2.如权利要求1所述的反射式基板的制造方法,其特征在于,还包括一步骤(c),移除所述的第一金属层上的所述的氮化铝层。2 . The method for manufacturing a reflective substrate according to claim 1 , further comprising a step (c) of removing the aluminum nitride layer on the first metal layer. 3 . 3.如权利要求1所述的反射式基板的制造方法,其特征在于,步骤(a)中的所述的第一金属层具有光反射性。3 . The method for manufacturing a reflective substrate according to claim 1 , wherein the first metal layer in step (a) has light reflectivity. 4 . 4.如权利要求1所述的反射式基板的制造方法,其特征在于,步骤(a)中的所述的至少一软性金属是指:铝、银、镍、铜或铂。4. The method for manufacturing a reflective substrate as claimed in claim 1, wherein the at least one soft metal in step (a) refers to aluminum, silver, nickel, copper or platinum. 5.如权利要求1所述的反射式基板的制造方法,其特征在于,步骤(b)中的所述的氮化铝层是采用反应性溅镀法所沉积形成。5 . The method for manufacturing a reflective substrate according to claim 1 , wherein the aluminum nitride layer in step (b) is deposited and formed by reactive sputtering. 6.如权利要求1所述的反射式基板的制造方法,其特征在于,所述的第一金属层与所述的透明基板之间还包括一缓冲层,且该缓冲层材料为钛、氮化钛、钼、铬或其合金。6. The method for manufacturing a reflective substrate according to claim 1, wherein a buffer layer is further included between the first metal layer and the transparent substrate, and the material of the buffer layer is titanium, nitrogen titanium, molybdenum, chromium or their alloys. 7.如权利要求1所述的反射式基板的制造方法,其特征在于,步骤(c)中的所述的氮化铝层形成的厚度范围为150-1500。7 . The method for manufacturing a reflective substrate according to claim 1 , wherein the thickness of the aluminum nitride layer in step (c) is 150-1500 Ȧ. 8.一种液晶显示装置,其特征在于包括:8. A liquid crystal display device, characterized in that it comprises: 一含有一氮化铝层、一反射金属层以及一第一金属层的下基板,其中所述的氮化铝层介于所述的第一金属层与所述的反射金属层之间,所述第一金属层位于下基板上,反射金属层位于氮化铝层上;所述的第一金属层及所述的反射金属层具有一凹凸表面,且所述的第一金属层是由至少一软性金属或其合金所形成;A lower substrate comprising an aluminum nitride layer, a reflective metal layer and a first metal layer, wherein the aluminum nitride layer is between the first metal layer and the reflective metal layer, the The first metal layer is located on the lower substrate, and the reflective metal layer is located on the aluminum nitride layer; the first metal layer and the reflective metal layer have a concave-convex surface, and the first metal layer is composed of at least Formed from a soft metal or its alloys; 一上基板,其表面具有至少一透明电极;以及an upper substrate having at least one transparent electrode on its surface; and 一液晶层,其介于所述的下基板与所述的上基板之间。A liquid crystal layer is interposed between the lower substrate and the upper substrate. 9.如权利要求8所述的液晶显示装置,其特征在于,所述的至少一软性金属是指:铝、银、镍、铜或铂。9. The liquid crystal display device as claimed in claim 8, wherein the at least one soft metal refers to aluminum, silver, nickel, copper or platinum. 10.如权利要求8所述的液晶显示装置,其特征在于,所述的透明电极的材料为氧化铟锡或氧化铟锌。10. The liquid crystal display device according to claim 8, wherein the material of the transparent electrode is indium tin oxide or indium zinc oxide. 11.如权利要求8所述的液晶显示装置,其特征在于,所述的液晶层为负介电各向异性液晶或正介电各向异性液晶。11. The liquid crystal display device according to claim 8, wherein the liquid crystal layer is a negative dielectric anisotropy liquid crystal or a positive dielectric anisotropy liquid crystal.
CNB2005100027679A 2005-01-26 2005-01-26 Method for manufacturing reflective substrate and liquid crystal display device Expired - Fee Related CN100342274C (en)

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Publication number Priority date Publication date Assignee Title
CN102590909B (en) * 2012-03-02 2014-04-02 青岛海信电器股份有限公司 Reflector plate and liquid crystal module
CN102707349B (en) * 2012-03-31 2015-07-29 深圳市华星光电技术有限公司 The manufacture method in the reflection horizon of reflection LCD
CN104201190A (en) * 2014-08-26 2014-12-10 上海和辉光电有限公司 Organic light-emitting device and manufacturing method thereof
CN107463019B (en) * 2017-08-18 2023-05-12 京东方科技集团股份有限公司 Preparation method of display substrate, display substrate and electronic tag

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Publication number Priority date Publication date Assignee Title
US4519678A (en) * 1982-01-21 1985-05-28 Tokyo Shibaura Denki Kabushiki Kaisha Liquid crystal display device
JPH10293294A (en) * 1997-04-18 1998-11-04 Dainippon Printing Co Ltd Method for manufacturing flexible substrate for display
US5917567A (en) * 1997-05-22 1999-06-29 Lg Electronics Inc. Method of manufacturing a reflector comprising steps forming beads and polymer layer separately
JP2002214417A (en) * 2000-12-27 2002-07-31 Koninkl Philips Electronics Nv Light reflecting body and liquid crystal display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4519678A (en) * 1982-01-21 1985-05-28 Tokyo Shibaura Denki Kabushiki Kaisha Liquid crystal display device
JPH10293294A (en) * 1997-04-18 1998-11-04 Dainippon Printing Co Ltd Method for manufacturing flexible substrate for display
US5917567A (en) * 1997-05-22 1999-06-29 Lg Electronics Inc. Method of manufacturing a reflector comprising steps forming beads and polymer layer separately
JP2002214417A (en) * 2000-12-27 2002-07-31 Koninkl Philips Electronics Nv Light reflecting body and liquid crystal display device

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