CN100363802C - Liquid crystal display - Google Patents
Liquid crystal display Download PDFInfo
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- CN100363802C CN100363802C CNB2004100772357A CN200410077235A CN100363802C CN 100363802 C CN100363802 C CN 100363802C CN B2004100772357 A CNB2004100772357 A CN B2004100772357A CN 200410077235 A CN200410077235 A CN 200410077235A CN 100363802 C CN100363802 C CN 100363802C
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- liquid crystal
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- electrode
- memory capacitance
- crystal indicator
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 118
- 239000000758 substrate Substances 0.000 claims description 60
- 229910000838 Al alloy Inorganic materials 0.000 claims description 18
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 229910052755 nonmetal Inorganic materials 0.000 claims description 14
- 239000003990 capacitor Substances 0.000 claims description 12
- 229910052779 Neodymium Inorganic materials 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 229910052727 yttrium Inorganic materials 0.000 claims description 9
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical compound [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 29
- 230000006870 function Effects 0.000 description 16
- 238000010276 construction Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000004020 conductor Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
The present invention provides a liquid crystal display device which comprises a first basal plate, a second basal plate, a liquid crystal layer and storage capacitance electrodes, wherein the first basal plate and the second basal plate are oppositely arranged, the liquid crystal layer is positioned between the first basal plate and the second basal plate, and the storage capacitance electrodes are arranged on the first basal plate. The storage capacitance electrodes comprise a bottom storage capacitance electrode and a top storage capacitance electrode. A semi-penetration semi-reflection film is also arranged on the first basal plate, and the storage capacitance electrodes are respectively a reflecting electrode used for reflecting display.
Description
[technical field]
The invention relates to a kind of liquid crystal indicator.
[background technology]
Because advantages such as liquid crystal indicator has gently, approaches, power consumption is little are widely used in modernized information equipments such as notebook, mobile phone, personal digital assistant.But because of the liquid crystal of liquid crystal indicator itself does not have the characteristics of luminescence, therefore, for reaching display effect, must provide a planar light source device to liquid crystal indicator, as backlight module, its function is to provide the area source that brightness is abundant and be evenly distributed to liquid crystal indicator.
Seeing also Fig. 1, is a kind of liquid crystal indicator structural representation of prior art.This liquid crystal indicator 1 comprises that two transparent lower substrate 10 and upper substrate 20, liquid crystal layers 30 that are provided with relatively are distributed between this infrabasal plate 10 and the upper substrate 20; The inboard of this infrabasal plate 10 is provided with thin film transistor (TFT) 11, pixel electrode 12, memory capacitance bottom electrode 13, this thin film transistor (TFT) 11 comprises gate electrode 14, source electrode 15, drain electrode 16, wherein this pixel electrode 12 links to each other with drain electrode 16, is provided with grid electrode insulating layer 18, passivation layer 17 between this memory capacitance bottom electrode 13 and the pixel electrode 12; The inboard of this upper substrate 20 is disposed with colored filter 21, public electrode 22, this colored filter 21 comprises coloured part 24 and black matrix part 25, wherein the position of the thin film transistor (TFT) 11 of this black matrix" part 25 and infrabasal plate 10, memory capacitance bottom electrode 13 is corresponding, is incident to this thin film transistor (TFT) 11, memory capacitance bottom electrode 13 to prevent extraneous incident light.During this liquid crystal indicator 1 work, form memory capacitance between memory capacitance bottom electrode 13 and the pixel electrode 12, form electric field between pixel electrode 12 and the public electrode 22 to drive the liquid crystal molecule rotation to keep the voltage of pixel electrode 12.
Because this liquid crystal indicator 1 itself is not had a characteristics of luminescence, therefore need arranged outside one backlight module (figure does not show) at liquid crystal indicator 1 infrabasal plate 10, the light that backlight module sends is incident to liquid crystal layer 30, rotation by the electric field driven liquid crystal molecule is to realize Presentation Function, but backlight module is a highly energy-consuming device, its power consumption surpasses the power consumption of liquid crystal indicator 1 usually, and when this liquid crystal indicator 1 places the stronger environment of ambient light, the relative brightness of liquid crystal indicator 1 and contrast must reduce, therefore the display quality of this liquid crystal indicator 1 is affected by the external environment bigger, for relative brightness and the contrast that keeps liquid crystal indicator 1, then must improve the power of backlight module, its power consumption also increases thereupon.
[summary of the invention]
In order to overcome the high defective of prior art liquid crystal indicator power consumption, the invention provides a kind of energy-conservation liquid crystal indicator.
A kind of liquid crystal indicator of the present invention, it comprises first substrate and second substrate, a liquid crystal layer, a storage capacitor electrode, a pixel electrode and a passivation layer, this first substrate and second substrate are oppositely arranged, this liquid crystal layer is between this first substrate and second substrate, this storage capacitor electrode is arranged on this first substrate, it comprises a memory capacitance bottom electrode and a memory capacitance top electrode, wherein also be provided with a semi-penetration semi-reflective film on first substrate, this memory capacitance very reflecting electrode that powers on is used for reflection and shows.This passivation layer is between the upper and lower electrode of this memory capacitance, and this pixel electrode directly covers this memory capacitance top electrode.
A kind of liquid crystal indicator of the present invention, it comprises first substrate and second substrate, a liquid crystal layer, a storage capacitor electrode, this first substrate and second substrate are oppositely arranged, this liquid crystal layer is between this first substrate and second substrate, this storage capacitor electrode is arranged on this first substrate, it comprises a memory capacitance bottom electrode and a memory capacitance top electrode, it is characterized in that: also be provided with a semi-penetration semi-reflective film on first substrate; This memory capacitance top electrode comprises transparency electrode and reflecting plate, and this reflecting plate covers this transparency electrode, is used for reflection and shows.
A kind of liquid crystal indicator of the present invention, it comprises first substrate and second substrate, a liquid crystal layer, a storage capacitor electrode, this first substrate and second substrate are oppositely arranged, this liquid crystal layer is between this first substrate and second substrate, this storage capacitor electrode is arranged on this first substrate, it comprises a memory capacitance bottom electrode and a memory capacitance top electrode, it is characterized in that: also be provided with a semi-penetration semi-reflective film on first substrate; This memory capacitance bottom electrode is a reflecting electrode, is used for reflection and shows.
In the liquid crystal indicator of the present invention, this memory capacitance top electrode or memory capacitance bottom electrode are reflecting electrode.
Compared with prior art, the memory capacitance top electrode of liquid crystal indicator of the present invention or memory capacitance bottom electrode are reflecting electrode, and it is used for reflection and shows, ambient light reflected back liquid crystal layer can be realized the reflection Presentation Function; This semi-penetration semi-reflective film light that both penetrable backlight module sent, can reflect the light of external environment incident again, therefore realize reflection simultaneously and penetrate function, therefore this liquid crystal indicator can be realized penetrating and reflect demonstration, in the stronger or weak environment of ambient light, use its demonstration relative brightness and contrast all higher, it can effectively utilize ambient light by this memory capacitance zone, and power that therefore can corresponding reduction backlight module is to reach purpose of energy saving.
[description of drawings]
Fig. 1 is the structural representation of prior art liquid crystal indicator.
Fig. 2 is the structural representation of liquid crystal indicator first embodiment of the present invention.
Fig. 3 is the structural representation of liquid crystal indicator second embodiment of the present invention.
Fig. 4 is the structural representation of liquid crystal indicator the 3rd embodiment of the present invention.
Fig. 5 is the structural representation of liquid crystal indicator the 4th embodiment of the present invention.
Fig. 6 is the structural representation of liquid crystal indicator the 5th embodiment of the present invention.
Fig. 7 is the structural representation of liquid crystal indicator the 6th embodiment of the present invention.
Fig. 8 is the structural representation of liquid crystal indicator the 7th embodiment of the present invention.
Fig. 9 is the structural representation of liquid crystal indicator the 8th embodiment of the present invention.
Figure 10 is the structural representation of liquid crystal indicator the 9th embodiment of the present invention.
[embodiment]
Seeing also Fig. 2, is the synoptic diagram of liquid crystal indicator first embodiment of the present invention.This liquid crystal indicator 100 comprises that two relative transparent lower substrate 110 and upper substrate 120, a liquid crystal layer 130 are between this infrabasal plate 110 and upper substrate 120; The inboard of this infrabasal plate 110 is provided with thin film transistor (TFT) 111, pixel electrode 11, memory capacitance bottom electrode 113, memory capacitance top electrode 118, semi-penetration semi-reflective film 119; The inboard of this upper substrate 120 is provided with colored filter 121, public electrode 122.
This thin film transistor (TFT) 111 comprises gate electrode 114, source electrode 115, drain electrode 116, wherein this pixel electrode 112 links to each other with drain electrode 116, this pixel electrode 112 is made by transparent conductive material, as tin indium oxide (Indium Tin Oxide, ITO) or indium zinc oxide (IndiumZinc Oxide, IZO) etc.One passivation layer 117 is set between this memory capacitance bottom electrode 113 and the pixel electrode 112.
The memory capacitance top electrode 118 of this semi-penetration semi-reflective film 119 and high reflectance is arranged between this passivation layer 117 and the pixel electrode 112.The size and location of this memory capacitance top electrode 118 are corresponding with the size and location of memory capacitance bottom electrode 113, its material is high reflectance conductive materials such as metallic aluminium, silver, neodymium aluminium alloy or yttrium aluminium alloy, and this memory capacitance top electrode 118 forms a memory capacitance zone with memory capacitance bottom electrode 113.This semi-penetration semi-reflective film 119 presses work to form by two or more metal oxide or nonmetal oxide of different refractivity, is sandwich construction, and this metal oxide can be titania (TiO
2), neodymia (Nb
2O
5) or zinc paste (ZnO
2), this nonmetal oxide can be silicon dioxide (SiO
2) or silicon nitride (Si
3N
4), because this metal oxide or nonmetal oxide are transparent material, and has different refractive indexes respectively, this characteristic makes this semi-penetration semi-reflective film 119 light that both penetrable backlight module sent, can reflect the light of external environment incident again, therefore have reflection simultaneously and penetrate function, the reflectivity of this semi-penetration semi-reflective film 119 changes according to the difference of its thickness and composition structure.
This colored filter 121 comprises coloured part 124 and black matrix part 125, and wherein this black matrix" part 125 is corresponding with the position of the thin film transistor (TFT) 111 of infrabasal plate 110, is incident to this thin film transistor (TFT) 111 to prevent extraneous incident light.
During these liquid crystal indicator 100 work, electrically connect between this pixel electrode 112 and the memory capacitance top electrode 118, form memory capacitance between memory capacitance bottom electrode 113 and the memory capacitance top electrode 118, therefore can keep the voltage of pixel electrode 112, form electric field between pixel electrode 112 and the public electrode 122 to drive the rotation of liquid crystal molecule.
Because this memory capacitance top electrode 118 is made by high reflectance conductive materials such as metallic aluminium, silver, neodymium aluminium alloy or yttrium aluminium alloys, it can serve as a reflecting electrode with ambient light reflected back liquid crystal layer 130, realizes in the memory capacitance zone that therefore reflection shows.This semi-penetration semi-reflective film 119 light that both penetrable backlight module sent, can reflect the light of external environment incident again, therefore realize reflection simultaneously and penetrate function, therefore this liquid crystal indicator 100 can be realized penetrating and reflect demonstration, in the stronger or weak environment of ambient light, use its demonstration relative brightness and contrast all higher, it can effectively utilize ambient light by this memory capacitance top electrode 118, and power that therefore can corresponding reduction backlight module is to reach purpose of energy saving.
And, the ambient light of can utilizing this memory capacitance top electrode 118 realizes that reflection shows, therefore reduce the area of the black matrix part 125 of colored filter 121, only make the position of this black matrix" part 125 corresponding, thereby increase the aperture opening ratio of liquid crystal indicator 100 with the position of the thin film transistor (TFT) 111 of infrabasal plate 110.
Seeing also Fig. 3, is the synoptic diagram of liquid crystal indicator second embodiment of the present invention.This liquid crystal indicator 200 is roughly the same with liquid crystal indicator 100 structures, and the difference of itself and liquid crystal indicator 100 is: form memory capacitance between pixel electrode 212 and the memory capacitance bottom electrode 213, to keep the voltage of pixel electrode 212; One reflecting plate 218 is arranged on the pixel electrode 212, and its position and size are corresponding with the position and the size of memory capacitance bottom electrode 213.This reflecting plate 218 can be made by high reflectance conductive material or dielectric material, as metallic aluminium, silver, neodymium aluminium alloy, yttrium aluminium alloy or resin reflectance coating etc.The part of this pixel electrode 212 and reflecting plate 218 serve as the memory capacitance top electrode, and itself and memory capacitance bottom electrode 213 produce memory capacitance, and realize reflection demonstration effect.This semi-penetration semi-reflective film 219 presses work to form by two or more metal oxide or nonmetal oxide of different refractivity, is sandwich construction, and it has reflection simultaneously and penetrates function.
Seeing also Fig. 4, is the synoptic diagram of liquid crystal indicator the 3rd embodiment of the present invention.This liquid crystal indicator 300 is roughly the same with liquid crystal indicator 100 structures, the difference of itself and liquid crystal indicator 100 is: the part of transparent pixels electrode 312 is served as the memory capacitance top electrode, form memory capacitance between itself and the memory capacitance bottom electrode 313, to keep the voltage of pixel electrode 312; This memory capacitance bottom electrode 313 is made by the high reflectance conductive material, as metallic aluminium, silver, neodymium aluminium alloy or yttrium aluminium alloy etc.This semi-penetration semi-reflective film 319 presses work to form by two or more metal oxide or nonmetal oxide of different refractivity, is sandwich construction, and it has reflection simultaneously and penetrates function.
Seeing also Fig. 5, is the synoptic diagram of liquid crystal indicator the 4th embodiment of the present invention.This liquid crystal indicator 400 is roughly the same with liquid crystal indicator 300 structures, the difference of itself and liquid crystal indicator 300 is: this memory capacitance top electrode 418 is transparency electrode, it is connected with transparent pixels electrode 412, and and memory capacitance bottom electrode 413 between form memory capacitance, to keep the voltage of pixel electrode 412.This memory capacitance bottom electrode 413 is made by the high reflectance conductive material, as metallic aluminium, silver, neodymium aluminium alloy or yttrium aluminium alloy etc.This semi-penetration semi-reflective film 419 presses work to form by two or more metal oxide or nonmetal oxide of different refractivity, is sandwich construction, and it has reflection simultaneously and penetrates function.
Seeing also Fig. 6, is the synoptic diagram of liquid crystal indicator the 5th embodiment of the present invention.This liquid crystal indicator 500 is roughly the same with liquid crystal indicator 100 structures, and the difference of itself and liquid crystal indicator 100 is: a plurality of projections 520 are set on memory capacitance top electrode 518 surfaces.This memory capacitance top electrode 518 is made by the high reflectance conductive material, as metallic aluminium, silver, neodymium aluminium alloy or yttrium aluminium alloy etc.The effect of these a plurality of projections 520 is: the evenly outgoing after 518 reflections of memory capacitance top electrode of extraneous incident light.This semi-penetration semi-reflective film 519 presses work to form by two or more metal oxide or nonmetal oxide of different refractivity, is sandwich construction, and it has reflection simultaneously and penetrates function.
Seeing also Fig. 7, is the synoptic diagram of liquid crystal indicator the 6th embodiment of the present invention.This liquid crystal indicator 600 is roughly the same with liquid crystal indicator 100 structures, and the difference of itself and liquid crystal indicator 100 is: semi-penetration semi-reflective film 619 is arranged between memory capacitance bottom electrode 613 and the passivation layer 617.This semi-penetration semi-reflective film 619 is a dielectric film, presses work to form by two or more metal oxide or nonmetal oxide of different refractivity, is sandwich construction, and it has reflection simultaneously and penetrates function.
Seeing also Fig. 8, is the synoptic diagram of liquid crystal indicator the 7th embodiment of the present invention.This liquid crystal indicator 700 is roughly the same with liquid crystal indicator 100 structures, and the difference of itself and liquid crystal indicator 100 is: semi-penetration semi-reflective film 719 is arranged on the outside of infrabasal plate 710.This semi-penetration semi-reflective film 719 presses work to form by two or more metal oxide or nonmetal oxide of different refractivity, is sandwich construction, and it has reflection simultaneously and penetrates function.
Seeing also Fig. 9, is the synoptic diagram of liquid crystal indicator the 8th embodiment of the present invention.This liquid crystal indicator 800 is roughly the same with liquid crystal indicator 100 structures, and the difference of itself and liquid crystal indicator 100 is: semi-penetration semi-reflective film 819 is arranged between grid electrode insulating layer 808 and the pixel electrode 812.This semi-penetration semi-reflective film 819 is a dielectric film, by different refractivity two or more metal oxide or nonmetal oxide is stacked constitutes, be sandwich construction, it has reflection simultaneously and penetrates function and insulating effect.In the present embodiment, this semi-penetration semi-reflective film 819 had both served as the effect of passivation layer, realized reflection simultaneously and penetrated function.
Seeing also Figure 10, is the synoptic diagram of liquid crystal indicator the 9th embodiment of the present invention.This liquid crystal indicator 900 is roughly the same with liquid crystal indicator 100 structures, and the difference of itself and liquid crystal indicator 100 is: semi-penetration semi-reflective film 919 is arranged on grid electrode insulating layer 908, memory capacitance bottom electrode 913, gate electrode 914 between infrabasal plate 910.This semi-penetration semi-reflective film 919 is a dielectric film, by different refractivity two or more metal oxide or nonmetal oxide is stacked constitutes, be sandwich construction, it has reflection simultaneously and penetrates function and insulating effect.
In the second embodiment of the invention liquid crystal indicator, can on the pixel electrode 212 that the plate 218 that is reflected covers, a plurality of projections be set; In the 3rd embodiment, also a plurality of projections can be set on memory capacitance bottom electrode 313; The present invention first, second, third and fourth, in five, seven embodiments, this semi-penetration semi-reflective film also can use the metallic film of the high reflectance that is provided with opening to make.In each embodiment of the present invention, can be at arranged outside one diffusion sheet of upper substrate to enlarge the visual angle of liquid crystal indicator.
Among the present invention, the big I of area that penetrates viewing area and reflective display region territory is according to the different needs adjustment: liquid crystal indicator is generally used under the stronger environment of ambient light, and the area in reflective display region territory can be greater than the area that penetrates the viewing area; Liquid crystal indicator is generally used under the more weak environment of ambient light, and the area that penetrates the viewing area can be greater than the area in reflective display region territory; Certainly, the area that penetrates viewing area and reflective display region territory is also can size identical.
Among the present invention, because memory capacitance top electrode, reflecting plate or memory capacitance bottom electrode can be with ambient light reflected back liquid crystal layers, therefore realize in the memory capacitance zone that reflection shows, this semi-penetration semi-reflective film light that both penetrable backlight module sent, can reflect the light of external environment incident again, therefore realize reflection simultaneously and penetrate function, therefore this liquid crystal indicator can be realized penetrating and reflect demonstration, in the stronger or weak environment of ambient light, use its demonstration relative brightness and contrast all higher, can effectively utilize ambient light, the power of corresponding reduction backlight module reaches purpose of energy saving.
Claims (16)
1. liquid crystal indicator, it comprises: first substrate and second substrate, a liquid crystal layer, a storage capacitor electrode, a pixel electrode and a passivation layer, this first substrate and second substrate are oppositely arranged, this liquid crystal layer is between this first substrate and second substrate, this storage capacitor electrode is arranged on this first substrate, it comprises a memory capacitance bottom electrode and a memory capacitance top electrode, it is characterized in that: also be provided with a semi-penetration semi-reflective film on first substrate; This memory capacitance very reflecting electrode that powers on is used for reflection and shows; This passivation layer is between the upper and lower electrode of this memory capacitance, and this pixel electrode directly covers this memory capacitance top electrode.
2. liquid crystal indicator as claimed in claim 1 is characterized in that: this semi-penetration semi-reflective film is arranged at side within first substrate.
3. liquid crystal indicator as claimed in claim 2 is characterized in that: this semi-penetration semi-reflective film is a dielectric film, and its metal oxide or nonmetal oxide by two or more different refractivity presses work to form.
4. liquid crystal indicator as claimed in claim 1 is characterized in that: this semi-penetration semi-reflective film is arranged at side outside first substrate.
5. liquid crystal indicator as claimed in claim 4 is characterized in that: this semi-penetration semi-reflective film is a dielectric film, and its metal oxide or nonmetal oxide by two or more different refractivity presses work to form.
6. as claim 3 or 5 described liquid crystal indicators, it is characterized in that: this metal oxide can be titania (TiO
2), neodymia (Nb
2O
5) or zinc paste (ZnO
2), this nonmetal oxide can be silicon dioxide (SiO
2) or silicon nitride (Si
3N
4).
7. as claim 2 or 4 described liquid crystal indicators, it is characterized in that: this semi-penetration semi-reflective film is the metallic film that is provided with the high reflectance of opening.
8. liquid crystal indicator as claimed in claim 1 is characterized in that: this memory capacitance upper electrode material is aluminium, silver, neodymium aluminium alloy, yttrium aluminium alloy or resin reflectance coating.
9. liquid crystal indicator, it comprises: first substrate and second substrate, a liquid crystal layer, a storage capacitor electrode, this first substrate and second substrate are oppositely arranged, this liquid crystal layer is between this first substrate and second substrate, this storage capacitor electrode is arranged on this first substrate, it comprises a memory capacitance bottom electrode and a memory capacitance top electrode, it is characterized in that: also be provided with a semi-penetration semi-reflective film on first substrate; This memory capacitance top electrode comprises transparency electrode and reflecting plate, and this reflecting plate covers this transparency electrode, is used for reflection and shows.
10. liquid crystal indicator as claimed in claim 9 is characterized in that: this reflection plate material is aluminium, silver, neodymium aluminium alloy, yttrium aluminium alloy or resin reflectance coating.
11. liquid crystal indicator as claimed in claim 1 is characterized in that: this memory capacitance upper electrode surface is provided with a plurality of projections.
12. liquid crystal indicator, it comprises: first substrate and second substrate, a liquid crystal layer, a storage capacitor electrode, this first substrate and second substrate are oppositely arranged, this liquid crystal layer is between this first substrate and second substrate, this storage capacitor electrode is arranged on this first substrate, it comprises a memory capacitance bottom electrode and a memory capacitance top electrode, it is characterized in that: also be provided with a semi-penetration semi-reflective film on first substrate; This memory capacitance bottom electrode is a reflecting electrode, is used for reflection and shows.
13. liquid crystal indicator as claimed in claim 12 is characterized in that: this memory capacitance very transparency electrode that powers on.
14. liquid crystal indicator as claimed in claim 13 is characterized in that: this memory capacitance lower electrode material is aluminium, silver, neodymium aluminium alloy, yttrium aluminium alloy or resin reflectance coating.
15. liquid crystal indicator as claimed in claim 13 is characterized in that: this memory capacitance lower electrode surface is provided with a plurality of projections.
16. liquid crystal indicator as claimed in claim 1 is characterized in that: this second substrate arranged outside, one diffusion sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100772357A CN100363802C (en) | 2004-12-01 | 2004-12-01 | Liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100772357A CN100363802C (en) | 2004-12-01 | 2004-12-01 | Liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1782799A CN1782799A (en) | 2006-06-07 |
| CN100363802C true CN100363802C (en) | 2008-01-23 |
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ID=36773173
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100772357A Expired - Fee Related CN100363802C (en) | 2004-12-01 | 2004-12-01 | Liquid crystal display |
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| CN (1) | CN100363802C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3892882B2 (en) * | 2005-06-13 | 2007-03-14 | 三菱電機株式会社 | Transflective liquid crystal display device |
| CN101165564B (en) * | 2006-10-20 | 2010-12-22 | 群康科技(深圳)有限公司 | Semi-transmission semi-reflection liquid crystal display device |
| US8823624B2 (en) * | 2010-08-13 | 2014-09-02 | Au Optronics Corporation | Display device having memory in pixels |
| CN114280831A (en) * | 2020-09-28 | 2022-04-05 | 瀚宇彩晶股份有限公司 | Display panel |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1402059A (en) * | 2001-08-20 | 2003-03-12 | 奇美电子股份有限公司 | Transflective LCD Display |
| WO2003052724A2 (en) * | 2001-12-18 | 2003-06-26 | Samsung Electronics Co., Ltd. | Transmissive and reflective type liquid crystal display |
| US6707511B2 (en) * | 2000-10-20 | 2004-03-16 | Lg. Philips Lcd Co., Ltd. | Reflective and transflective liquid crystal display device and its manufacturing method |
-
2004
- 2004-12-01 CN CNB2004100772357A patent/CN100363802C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6707511B2 (en) * | 2000-10-20 | 2004-03-16 | Lg. Philips Lcd Co., Ltd. | Reflective and transflective liquid crystal display device and its manufacturing method |
| CN1402059A (en) * | 2001-08-20 | 2003-03-12 | 奇美电子股份有限公司 | Transflective LCD Display |
| WO2003052724A2 (en) * | 2001-12-18 | 2003-06-26 | Samsung Electronics Co., Ltd. | Transmissive and reflective type liquid crystal display |
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|---|---|
| CN1782799A (en) | 2006-06-07 |
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