CN100374913C - Electro-optical device, substrate for electro-optical device, and electronic device - Google Patents
Electro-optical device, substrate for electro-optical device, and electronic device Download PDFInfo
- Publication number
- CN100374913C CN100374913C CNB2005100683875A CN200510068387A CN100374913C CN 100374913 C CN100374913 C CN 100374913C CN B2005100683875 A CNB2005100683875 A CN B2005100683875A CN 200510068387 A CN200510068387 A CN 200510068387A CN 100374913 C CN100374913 C CN 100374913C
- Authority
- CN
- China
- Prior art keywords
- mentioned
- conductive layer
- welding zone
- zone
- insulation course
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Liquid Crystal (AREA)
Abstract
本发明提供一种可防止导电图形的电蚀，并且可设置即使在使IC等的安装体的整体尺寸减小的情况下，仍可接触检查探头的检查焊区的安装结构体，电光装置，电光装置用基板和电子设备。
The present invention provides a mounting structure, an electro-optical device, which can prevent electrolytic corrosion of a conductive pattern, and can provide an inspection pad that can contact an inspection probe even when the overall size of an IC etc. mounting body is reduced. Substrates and electronic devices for electro-optical devices.
Description
Technical field
The fixing body that the present invention relates to IC etc. is installed on being mounted the assembling structure on the body, the electro-optical device with this assembling structure, substrate for electrooptic device and having the electronic equipment of electro-optical device of substrate etc.
Background technology
At the active array type liquid-crystal apparatus, in the electro-optical device of organic electroluminescence display etc., in the position of each intersection point that is equivalent to many data lines and Duo Gen sweep trace, form pixel, by data line and sweep trace, the signal of regulation is supplied with each pixel, carry out the driving of each pixel.Thus, in electro-optical device, keeping on the substrate for electrooptic device of electro-optical substance, a plurality of conductive patterns form as signal wire, and the installation welding zone that adopts the part by this signal wire to form is installed IC in COG (Chip On Glass) mode.In addition, also have the flexible base, board of IC being installed in COF (Chip On Film) mode and be installed on situation on the installation welding zone of substrate for electrooptic device.
, in electro-optical device, follow pixel quantity to increase here, or the dwindling of pel spacing, have conductive pattern draw according to narrower spacing around tendency.Thus,,, adhere to moisture in the extraneous gas etc., then have in conductive pattern generation galvanic corrosion the problem of broken string at conductive pattern if in the zone that conductive pattern exposes.So, the technology of the part that people's proposition is exposed by resin covering conductive pattern etc. (such as, with reference to patent documentation 1).
In addition, in electro-optical device, the state before IC is installed will check that probe contacts with conductive pattern, and external signal carries out the inspection of lighting of each pixel.Thus, in the past, conductive pattern extends to the zone that overlaps with IC with plane earth from welding zone is installed, and this extension is checked the inspection welding zone of probe as contact.
Patent documentation 1:JP spy opens the 2003-36039 document
But, as patent documentation 1 described technology, covering by resin in the method for conductive pattern, the precision during owing to application of resin is lower, so when covering conductive pattern by resin bed, have the danger that welding zone also covers for resin is installed.In addition,, be provided with in the scheme of checking welding zone, also have occasion, the problem of checking welding zone can't be set at the overall dimensions of miniaturization IC according to the mode that overlaps with IC with plane earth as before.
Summary of the invention
At above-mentioned problem, problem of the present invention is to provide the galvanic corrosion that can prevent conductive pattern, even and under the situation of the fixing body of miniaturization IC etc., the assembling structure that can contact the inspection welding zone of checking probe still can be set, electro-optical device, substrate for electrooptic device and electronic equipment.
In order to solve above-mentioned problem, the present invention relates to a kind of assembling structure, this assembling structure comprises and is mounted body and fixing body, when 2 directions of intersecting are directions X and Y direction, be mounted in the body at this, by the part in a plurality of conductive patterns along the extension of Y direction, a plurality of installation welding zones that formation is arranged along directions X, this fixing body is installed on above-mentioned being mounted on the body according to the mode that is electrically connected with above-mentioned installation welding zone, be mounted on the body above-mentioned, from lower layer side, towards upper layer side, form the 1st conductive layer successively, insulation course, the 2nd conductive layer and the 3rd conductive layer, in above-mentioned a plurality of conductive patterns, comprise following a plurality of conductive patterns, these a plurality of conductive patterns comprise above-mentioned installation welding zone, check welding zone and draw that in above-mentioned installation welding zone, lamination has the 1st conductive layer successively around part, above-mentioned insulation course and the 3rd conductive layer, top layer is formed by above-mentioned the 3rd conductive layer, checks in welding zone, outside the installation region of above-mentioned fixing body at this, with the formation of above-mentioned installation welding zone zone position adjacent, lamination has above-mentioned the 1st conductive layer successively, above-mentioned insulation course and the 3rd conductive layer, and top layer is formed by above-mentioned the 3rd conductive layer, draw in part at this, in the part of extending from above-mentioned inspection welding zone, lamination has above-mentioned the 1st conductive layer and above-mentioned insulation course successively, and top layer is above-mentioned insulation course.
In addition, in order to solve above-mentioned problem, the present invention relates to a kind of assembling structure, this assembling structure comprises and is mounted body and fixing body, when 2 directions of intersecting are directions X and Y direction, be mounted in the body at this, by the part in a plurality of conductive patterns along the extension of Y direction, a plurality of installation welding zones that formation is arranged along directions X, this fixing body is installed on above-mentioned being mounted on the body according to the mode that is electrically connected with above-mentioned installation welding zone, in above-mentioned a plurality of conductive patterns, comprise following a plurality of conductive patterns, these a plurality of conductive patterns comprise above-mentioned installation welding zone, check welding zone and draw around part, in above-mentioned installation welding zone, lamination has the 1st conductive layer successively, insulation course and ITO layer, and top layer is formed by above-mentioned ITO layer, check in the welding zone at this, outside the installation region of above-mentioned fixing body, with the formation of above-mentioned installation welding zone zone position adjacent, lamination has above-mentioned the 1st conductive layer successively, above-mentioned insulation course and ITO layer, top layer is formed by above-mentioned ITO layer, draws in part at this, in the part of extending from above-mentioned inspection welding zone, lamination has above-mentioned the 1st conductive layer and above-mentioned insulation course successively, and top layer is above-mentioned insulation course.
According to the present invention, because the zone beyond in the zone that overlaps with fixing body with plane earth, form and check welding zone, check in welding zone lamination the 1st conductive layer successively at this, insulation course and the 3rd conductive layer, even so under the situation of the fixing body of miniaturization IC etc., still can guarantee the inspection welding zone that probe is contacted with conductive pattern.In addition, drawing around being 2 layers of structure partly in the conductive pattern, wherein, lamination has the 1st conductive layer and insulation course successively.Thus, draw around part at this, top layer is formed by insulation course, like this, even drawing part approaching between part, adheres under the situation of moisture etc. of extraneous gas, and galvanic corrosion does not still take place.In addition, regulation is handled by the composition of the 2nd conductive layer on the upper strata that is formed at insulation course and the 3rd conductive layer in the zone that forms 2 layers of structure, handles according to such composition, and is different with the occasion of application of resin, and precision that can be higher forms in the zone of regulation.So even welding zone is being installed, near the top layer of drawing around part of checking welding zone is under the situation of insulation course, still welding zone be not installed, and checks the surface of welding zone, forms insulation course.
In addition, according to the present invention, because the zone beyond in the zone that overlaps with fixing body with plane earth, form and check welding zone, check in welding zone lamination the 1st conductive layer successively at this, insulation course and ITO layer are so even under the situation of the fixing body of miniaturization IC etc., still can guarantee the inspection welding zone that probe is contacted with conductive pattern.In addition, drawing around being 2 layers of structure partly in the conductive pattern, wherein, lamination has the 1st conductive layer and insulation course successively.Thus, draw around part at this, top layer is formed by insulation course, like this, even drawing part approaching between part, adheres under the situation of moisture etc. of extraneous gas, and galvanic corrosion does not still take place.In addition, regulation is handled by the composition of the 2nd conductive layer on the upper strata that is formed at insulation course and ITO layer in the zone that forms 2 layers of structure, handles according to such composition, and is different with the occasion of application of resin, and precision that can be higher forms in the zone of regulation.So even welding zone is being installed, near the top layer of drawing around part of checking welding zone is under the situation of insulation course, still welding zone be not installed, and checks the surface of welding zone, forms insulation course.
In the present invention, such as, draw around part from above-mentioned, extend and to be provided with the signal wire part, in this signal wire part, above-mentioned the 1st conductive layer of lamination successively, above-mentioned insulation course and the 2nd conductive layer, top layer is formed by above-mentioned the 2nd conductive layer.In this occasion, best, above-mentioned signal wire part covers by covering the above-mentioned coating member that is mounted body partly, and the above-mentioned zone of stretching out that is mounted above-mentioned relatively coating member in the body is provided with above-mentioned installation welding zone, above-mentioned inspection welding zone and above-mentioned drawing around part.If constitute like this, owing to the signal wire part is not exposed from coating member, so, galvanic corrosion does not take place in the signal wire part.
In the present invention, best, above-mentioned insulation course only is formed at the face side of above-mentioned the 1st conductive layer selectively.
In the present invention, above-mentioned the 1st conductive layer is formed by the Ta alloy of Ta or TaW (tantalum-tungsten) etc., and above-mentioned insulation course is by TaO
xForm, above-mentioned the 2nd conductive layer is formed by Cr or Cr alloy, and above-mentioned the 3rd conductive layer is formed by ITO.
In the present invention, best, in above-mentioned insulation course, be formed with the removal part, this removal part is used to make the 3rd conductive layer of above-mentioned installation welding zone and above-mentioned inspection welding zone to be electrically connected with above-mentioned the 1st conductive layer.If constitute like this, even then at length direction along conductive pattern, the 2nd conductive layer, under the situation that the 3rd conductive layer disconnects, still can be easily and positively guarantee electrical connection by the 1st conductive layer.
In addition, best in the present invention, in above-mentioned insulation course, be formed with the removal part, this removal part is used to make the above-mentioned ITO layer of above-mentioned installation welding zone and above-mentioned inspection welding zone to be electrically connected with above-mentioned the 1st conductive layer.If constitute like this, even then at length direction along conductive pattern, the 2nd conductive layer, under the situation that the ITO layer disconnects, still can be easily and positively guarantee electrical connection by the 1st conductive layer.
In the present invention, also can be in above-mentioned installation welding zone, at the interlayer of above-mentioned insulation course and the 3rd conductive layer, lamination has the 2nd conductive layer.
Also have, in the present invention, also can be in above-mentioned installation welding zone, at the interlayer of above-mentioned insulation course and above-mentioned ITO layer, lamination the 2nd conductive layer.
In the present invention, in the above-mentioned inspection welding zone, can be at the interlayer of above-mentioned insulation course and above-mentioned the 3rd conductive layer, above-mentioned the 2nd conductive layer of lamination.
In the present invention, in the above-mentioned inspection welding zone, can be at above-mentioned the 2nd layer of electricity layer of the interlayer stack of above-mentioned insulation course and above-mentioned ITO layer.
In the present invention, above-mentioned fixing body such as, be IC.In this occasion, best, above-mentioned installation welding zone is used welding zone for output, and this output makes signal export from above-mentioned IC with welding zone.Drive IC with IC for being used in electro-optical device, the quantity of the installation welding zone of the output usefulness of IC is more than the installation welding zone of the input usefulness of IC, and a plurality of conductive patterns extend from outgoing side, and are thus, at outgoing side, approaching between the conductive pattern.Thus, owing to be easy to generate galvanic corrosion at outgoing side, so best, the present invention is used for outgoing side.
Assembling structure of the present invention can be used for electro-optical device.In this occasion, the above-mentioned body that is mounted is for being the zone of rectangular arrangement in a plurality of pixels, the substrate for electrooptic device that keeps electro-optical substance, above-mentioned a plurality of conductive pattern is the signal wire that pixel drive is used, the signal wire that this pixel drive is used extends to the installation region of above-mentioned fixing body from keeping the intra-zone of above-mentioned electro-optical substance.
In the present invention, on above-mentioned substrate for electrooptic device, such as, in each pixel of a plurality of pixels, form pixel switch thin film diode element and pixel electrode, this thin film diode element is by above-mentioned the 1st conductive layer, and above-mentioned insulation course and the 2nd conductive layer form, this pixel electrode forms with the 3rd conductive layer that above-mentioned signal wire partly is electrically connected by by above-mentioned thin film diode element.In such occasion, because signal wire is above-mentioned the 1st conductive layer originally, the 3-tier architecture of above-mentioned insulation course and the 2nd conductive layer is not so add new layer.In addition, insulation course adopts by anodic oxidation, the oxide film that the method for heated oxide etc. is carried out oxidation to above-mentioned the 1st conductive layer.Such as, above-mentioned the 1st conductive layer is formed by the Ta alloy of Ta or TaW (tantalum-tungsten) etc., and above-mentioned insulation course is by TaO
x(tantalum pentoxide) forms.So insulation course only is formed at the surface of the 1st conductive layer, like this, the precision that insulation course can be higher is formed at the regulation zone selectively.
In the present invention, have in above-mentioned substrate for electrooptic device,, form the situation of resin bed along the outer peripheral edges at least in the zone that keeps above-mentioned electro-optical substance.Such resin bed is in liquid-crystal apparatus, with the encapsulant of a pair of substrate in the state applying of opposite disposed.In addition, in electroluminescent display, above-mentioned resin bed is subjected to moisture for preventing electroluminescent cell, the sealing resin of the influence of oxygen etc.In this occasion, best, in above-mentioned signal wire, above-mentioned signal wire partly is formed at the inboard in the formation zone of above-mentioned resin bed, and the outside in the formation zone of above-mentioned resin bed forms above-mentioned drawing around part, above-mentioned inspection welding zone and above-mentioned installation welding zone.Even galvanic corrosion, because top layer is an insulation course, so drawing around part, does not still take place at above-mentioned drawing under the situation that part is exposed in the outside in the formation zone of resin bed.In addition, because the coverings of being adopted when welding zone is installed by fixing body that IC etc. is installed such as anisotropic conductive spare, so galvanic corrosion does not take place in the installation welding zone.In addition, because in checking welding zone, the 1st conductive layer is by lower layer side, so even under the situation of the 3rd conductive layer generation galvanic corrosion, the rough sledding that does not still break etc.
The present invention can be used for following substrate for electrooptic device, wherein, and when 2 directions of intersecting are directions X and Y direction, by the part in the many signal wires along the extension of Y direction, a plurality of installation welding zones that formation is arranged along directions X are the zone of rectangular arrangement in a plurality of pixels, keep electro-optical substance.In this occasion, on this substrate for electrooptic device, from lower layer side, towards upper layer side, form the 1st conductive layer successively, insulation course, the 2nd conductive layer and the 3rd conductive layer, in above-mentioned many signal wires, comprise many following signal wires, these many signal wires comprise above-mentioned installation welding zone, check welding zone and draw around part, in above-mentioned installation welding zone, lamination has the 1st conductive layer successively, above-mentioned insulation course and the 3rd conductive layer, and top layer is formed by above-mentioned the 3rd conductive layer, check in the welding zone at this, outside the installation region of IC or flexible base, board, with the formation of above-mentioned installation welding zone zone position adjacent, lamination has above-mentioned the 1st conductive layer successively, above-mentioned insulation course and the 3rd conductive layer, top layer is formed by above-mentioned the 3rd conductive layer, draws in part at this, in the part of extending from above-mentioned inspection welding zone, lamination has above-mentioned the 1st conductive layer and above-mentioned insulation course successively, and top layer is above-mentioned insulation course.
In addition, the present invention can be used for following substrate for electrooptic device, wherein, when 2 directions of intersecting are directions X and Y direction, by the part in the many signal wires along the extension of Y direction, a plurality of installation welding zones that formation is arranged along directions X are the zone of rectangular arrangement in a plurality of pixels, keep electro-optical substance.In above-mentioned many signal wires, comprise many following signal wires, these many signal wires comprise above-mentioned installation welding zone, check welding zone and draw around part, in above-mentioned installation welding zone, lamination has the 1st conductive layer successively, above-mentioned insulation course and ITO layer, top layer is formed by above-mentioned ITO layer, checks in welding zone, outside the installation region of IC or flexible base, board at this, with the formation of above-mentioned installation welding zone zone position adjacent, lamination has above-mentioned the 1st conductive layer successively, above-mentioned insulation course and ITO layer, and top layer is formed by above-mentioned ITO layer, draw in part at this, in the part of extending from above-mentioned inspection welding zone, lamination has above-mentioned the 1st conductive layer and above-mentioned insulation course successively, and top layer is above-mentioned insulation course.
Electro-optical device of the present invention is a liquid-crystal apparatus, electroluminescent display etc., and such electro-optical device is used for portable telephone, the electronic equipment of mobile personal computer etc.
Brief description of drawings:
Fig. 1 is for representing to be adopted by the pixel switch element block scheme of the structure of the electro-optical device that the active array type liquid-crystal apparatus of TFD element forms in a schematic way;
Fig. 2 (A), (B) for watching the skeleton view of the electro-optical device of embodiments of the invention 1 from the device substrate side, and the skeleton view of watching from the counter substrate side;
Fig. 3 (A) is in the part by pixel electrode (B), the cut-open view when the Y direction is cut electro-optical device pixel electrode shown in Figure 2 open, and the key diagram that is formed at the conductive pattern on the device substrate of this electro-optical device;
Fig. 4 is in electro-optical device shown in Figure 2, is used as the key diagram of the TFD element of pixel switch element;
Fig. 5 (A), (B) be respectively the planimetric map of a part of 1IC installation region of device substrate of representing to be used for the electro-optical device of embodiments of the invention 1 in the amplification mode, and the planimetric map of a part of representing the protuberance of the IC that is connected with this installation welding zone in the amplification mode;
Fig. 6 is the process chart of the manufacture method of expression electro-optical device shown in Figure 2;
Fig. 7 is the key diagram of the structure of the conductive pattern of the electro-optical device of expression embodiments of the invention 2;
Fig. 8 (A), (B) be respectively the planimetric map of an installation welding zone part of outgoing side of 1IC installation region of device substrate of representing to be used for the electro-optical device of embodiments of the invention 3 in the amplification mode, and the planimetric map of a part of protuberance of representing the outgoing side of the IC that is connected with this installation welding zone in the amplification mode;
Fig. 9 is for representing to be adopted by the pixel switch element block scheme of the electro-optical device that the active array type liquid-crystal apparatus of thin film transistor (TFT) (TFT) forms in a schematic way;
Figure 10 has the block scheme of active array display unit of electroluminescent cell that adopts the organic film of electric charge injection type as electro-optical substance.
The explanation of label:
Label 4 expression 1IC (fixing body);
Label 8,801,802 expression conductive patterns;
Probe is checked in label 9 expressions;
Label 52 expression data lines (signal wire part);
Label 65,651, the installation welding zone of 652 expression output usefulness;
Welding zone is checked in label 82 expressions;
Embodiment
With reference to the accompanying drawings, embodiments of the invention are described.
(embodiment 1)
(one-piece construction of electro-optical device)
Fig. 1 is the block scheme of the electric structure of expression electro-optical device.Fig. 2 (A), Fig. 2 (B) are the outward appearance skeleton view of only watching the electro-optical device of embodiments of the invention 1 from the device substrate side, and the outward appearance skeleton view of only watching from the counter substrate side.Fig. 3 (A), Fig. 3 (B) is in the part by pixel electrode, the cut-open view when the Y direction is cut electro-optical device shown in Figure 2 open, and the key diagram that is formed at the conductive pattern on the device substrate of electro-optical device.In addition, in each figure that the explanation of this form is adopted, at each layer, or each parts, ratio is different, so that each layer, each parts is the size of identifiable degree in the drawings.In addition, for conductive pattern, welding zone etc. only illustrate its part, in practical matter, form with more quantity.
Electro-optical device 1a shown in Figure 1 adopts the active array type liquid-crystal apparatus of TFD (Thin Film Diode/ thin film diode element) for the pixel switch element, when 2 directions of intersecting are directions X and Y direction, many sweep trace 51a extend along directions X (line direction), and many data lines 52a extends along Y direction (row) direction.With corresponding each position, each point of crossing of sweep trace 51a and data line 52a, form pixel 53a, a plurality of pixel 53a are rectangular arrangement.In these pixels 53a, the TFD element 56a series connection that liquid crystal layer 54a and pixel switch are used.Each sweep trace 51a drives by scan line drive circuit 57a, and each data line 52a drives by data line drive circuit 58a.
When forming such electro-optical device 1a, image pattern 2 (A), Fig. 2 (B) and 3 (A), shown in Fig. 3 (B) like that, by encapsulant 30 (resin bed, coating member), device substrate 10 (substrate for electrooptic device/be mounted body) and counter substrate 20 (coating member) are fitted, in the zone of being enclosed by two substrates and encapsulant 30, sealing is as the liquid crystal 19 of electro-optical substance.Encapsulant 30 is roughly rectangular frame shape along the rim of counter substrate 20, still, for encapsulated liquid crystals 19, its a part of opening.Thus, after liquid crystal 19 sealings, by encapsulant 31, with this opening portion sealing.
In addition, in fact, on the surface in the outside of device substrate 10 and counter substrate 20, suitably be pasted with the polaroid that is used to make incident light polarization, be used for phase difference film that interference color are compensated etc.In addition, carrying out the colored occasion that shows, counter substrate 20 relatively, with the opposed zone of pixel electrode 34a, according to the rules arrangement forms R (red), G (green), the color filter (not shown) of B (blue), not with the opposed zone of pixel region 34a, form black matrix".In addition; on the surface that is formed with color filter and black matrix"; apply smooth processing layer; so that realize planarization and realize protection; on the surface of this smooth processing layer, form sweep trace 51a, still, owing to directly do not concern with the present invention; so, omit to its diagram and explanation for polaroid, phase difference film, color filter, black matrix", smooth processing film etc.
(composition of TFD element)
Fig. 4 is in electro-optical device shown in Figure 2, is used as the key diagram of the TFD element of pixel switch element.
In Fig. 4, on the surface of device substrate 10, form hypobasal 14, TFD element 56a constitutes so-called Back-to-Back (back-to-back) structure by by being formed at 2 TFD element assemblies that 1TFD element 33a in this hypobasal 14 and 2TFD element 33b form.Thus, in TFD element 56a, current-voltage non-linear in positive and negative two-way scope keeps symmetry.Hypobasal 14 such as, by the tantalum oxide (Ta of thickness at 50～200nm
2O
5) constitute, the purpose of its setting is to make the fitting tightly property raising of TFD element 56a, in addition, prevents the diffusion from the impurity of device substrate 10.1TFD element 33a and 2TFD element 33b are by the 1st metal level 32a (the 1st conductive layer), with the lip-deep insulation course 32b that is formed at the 1st metal level 32a, and lip-deep the 2nd metal level 32c that is formed at insulation course 32b, 32d (the 2nd conductive layer) constitutes. with being spaced from each other
In this form, the 1st metal level 32a is by the formation such as tantalum alloy film such as tantalum monomer film in the scope of 100～500nm of, thickness, TaW (tantalum-tungsten) etc., insulation course 32b such as, be the tantalum oxide (Ta of thickness in the scope of 10～35nm
2O
5/ TaO
x), it passes through by anodizing, the heated oxide method, and the mode of the surface of the 1st metal level 32a being carried out oxidation forms.The 2nd metal level 32c, 32d by such as, the metal film of chromium (Cr) etc. forms according to the thickness in the scope of 50～300nm.The 2nd metal level 32c side same as before, the part of composition data line 52a, another the 2nd metal level 32d is connected with the pixel electrode 34a that transparent conductive material by ITO (Indium Tin Oxide)/the 3rd conducting film etc. forms.Data line 52a is the signal wire part of 3-tier architecture, and wherein lamination has the 1st metal level 32a successively, insulation course 32b and the 2nd metal level 32c, and the 2nd metal level 32c is as the data line 52a of essence.
Turn back to Fig. 2 once more, in electro-optical device 1a, pass through the state that encapsulant 30 is fitted at device substrate 10 and counter substrate 20, device substrate 10 comprises from the outer peripheral edges of encapsulant 30, stretch out regional 10a to what a side was wherein stretched out, stretch out regional 10a at this, being extended with data line 52a is the conductive pattern 8 of one, and the conductive pattern 8 that is electrically connected with sweep trace 51a by conducting between substrate.When carrying out between substrate conducting, encapsulant 30 adopts the resin that is dispersed with a plurality of conducting particles with electric conductivity.The conducting particle be such as, carried out the particle of plastics of the coating of metal, have the particle of the resin of electric conductivity, it has the function of conducting between the conductive pattern on the corresponding substrate that is formed in device substrate 10 and the counter substrate 20.Thus, in this form, at the regional 10a of stretching out of device substrate 10, in 1IC4 (the IC chip/fixing body of (facedown) bonding type that faces down) from the COG mode to data line 52a output image signal is installed, and to 2 IC5 of sweep trace 51a output scanning signal ((facedown) bonding type IC chip/fixing body faces down), and on the installation welding zone 71 that is formed on the ora terminalis (substrate join domain 70) that stretches out regional 10a, be connected with flexible base, board 7.
(composition of IC installation region)
Fig. 5 (A), (B) be respectively the planimetric map of a part of 1IC installation region of device substrate of representing to be used for the electro-optical device of embodiments of the invention 1 in the amplification mode, and the planimetric map of a part of representing the protuberance of the IC that is connected with this installation welding zone in the amplification mode.
Shown in the image pattern 2 like that, at the regional 10a of stretching out of device substrate 10,, form the 1IC installation region 60 of establishing the 1IC4 of data line drive circuit in being equipped with in the COG mode at middle section along the direction of substrate edge 11, from 1IC installation region 60, extension is provided with a plurality of conductive patterns 8.In addition, the both sides in 1IC installation region 60, the 2IC installation region 50 that formation is established the 2IC5 of scan line drive circuit in installing in the COG mode, from 2IC installation region 50, also extension is provided with a plurality of conductive patterns 8.In addition, substrate edge 11 sides in IC installation region 50,60 along substrate edge 11, form the substrate join domain 70 that is connected with flexible base, board 7.
Here, because essentially identical structure can be adopted in 1IC installation region 60 and 2IC installation region 50, so with reference to Fig. 5 (A), Fig. 5 (B) is that the center is described with the structure of 1IC installation region 60, omission is to the specific descriptions of 2IC installation region 50.
In Fig. 3 (B) and Fig. 5 (A), in 1IC installation region 60, a plurality of installation welding zones 65,66 that the protuberance that is arranged with 1IC4 according to the mode parallel with substrate edge 11 along directions X connects by anisotropic conductive spare (comprise the film of anisotropic conductive spare or comprise the paste of anisotropic conductive spare) etc.Promptly, position in 1IC installation region 60 (side that conductive pattern 8 extends) away from substrate edge 11, by the part of extending point-blank along the Y direction at conductive pattern 8, form the installation welding zone 65 of output usefulness, substrate edge 11 1 sides in this installation welding zone 65, the installation welding zone 66 of the input usefulness that formation is electrically connected with installation welding zone 71.
On the other hand, shown in the image pattern 5 (B) like that, on the installed surface 40 of 1IC4, structure corresponding to 1IC installation region 60, in the position that plane earth overlaps with the installation welding zone 65 of output usefulness, form the protuberance 45 of output usefulness,, form the protuberance 46 of input usefulness with plane earth and the position that the installation welding zone 66 of input usefulness overlaps.
In the electro-optical device 1a that constitutes like this, in the process that IC4 is installed on the device substrate 10, the 1IC installation region of describing at reference Fig. 5 (A) 60, setting comprises the film of anisotropic conductive particle, the anisotropic conductive spare that comprises the paste etc. of anisotropic conductive particle, then, on anisotropic conductive spare, the 1IC4 that is provided with reference to Fig. 5 (B) and describes, in head (not shown) by connector presser, 1IC4 is heated, simultaneously it is pressurizeed, then shown in the image pattern 3 (B) like that, IC4 fixes by the resinous principle 201 that is contained in the anisotropic conductive spare 200, by conductive particle 202, the protuberance 45 of output usefulness is electrically connected with the installation welding zone 65 of output usefulness, and the protuberance 46 of input usefulness is electrically connected with the installation welding zone 66 of input usefulness.Thus, if at image pattern 2 (A), shown in Fig. 2 (B) like that, make the state of electro-optical device 1a, by flexible base, board 7, supply with signal, power supply potential etc., then from the output protuberance 45 of 1IC4, output image signal, this picture signal is exported to the data line 52a as the part of conductive pattern 8 by welding zone 65 is installed.In addition, sweep signal is from the output protuberance output of 2IC5, and this sweep signal is exported to sweep trace 51a by turning part between conductive pattern 8 and substrate, although the description of the mounting structure of this point omission.
(concrete structure of conductive pattern 8)
Shown in image pattern 3 and Fig. 5 (A) like that, in the electro-optical device 1a of this form, the part of conductive pattern 8 by extending point-blank along the Y direction, constitute welding zone 65 is installed, then, from welding zone 65 is installed, towards the zone of dividing by encapsulant 30, extend point-blank along the Y direction, constitute and check welding zone 82, then, constitute drawing of along inclined direction extending around part 83, afterwards, constitute the data line 52a (signal wire part) that extends point-blank along the Y direction.In addition, in the electro-optical device 1a of this form, on device substrate 10, the picture with reference to Fig. 4 and as described in, from lower layer side, towards upper layer side, in turn lamination is by tantalum monomer film or the 1st metal film 32a (1st conductive layer) that form such as TaW of thickness in the scope of 100～500nm, by the surface of the 1st metal level 32a being carried out thickness that oxidation the forms insulation course 32b that forms by tantalum oxide in the scope of 10～35nm, the 2nd metal level 32c (2nd conductive layer) that by chromium etc. form of thickness in the scope of 50～300nm, the ITO film (the 3rd conducting film) that forms in order to form pixel electrode 34a.So, in this form,,, have the part of function at each for conductive pattern 8 as described below, suitably adopt rhythmo structure.
At first, data line 52a is the signal wire part of 3-tier architecture as aforementioned, wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that is formed by tantalum oxide, and the 2nd metal level 32a that forms by chromium etc., top layer is the 2nd metal level 32c.
Welding zone 65 is installed is had 4 layers of structure, in these 4 layers of structures, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, the 2nd metal level 32c that forms by chromium etc., and the ITO film 34b that forms simultaneously with pixel electrode 34a, top layer is the ITO film 34b of its hardness greater than chromium etc.In addition, the installation welding zone 66 of input usefulness, the installation welding zone 71 of flexible base, board 7 also have and the identical structure of installation welding zone 65.
Relative this situation is drawn around part 83 and is had 2 layers of structure that are made of the 1st metal level 32a and insulation course 32b, and the 1st metal level 32a is formed by tantalum monomer film or TaW etc., and this insulation course 32b is formed by tantalum oxide, and top layer is insulation course 32b.Here, draw, be in the state that exposes to the open air around the part 83 2 layers of structure that the zone that overlaps with one side part plane earth of encapsulant 30 forms of serving as reasons.Relative this situation, top layer be the data line 52a of the 2nd metal level 32c not from the formation zone of encapsulant 30, expose laterally.
In addition, in this form, in conductive pattern 8, the formation zone (IC installation region 60) of the installation welding zone 65 of output usefulness, the part of extending point-blank along Y direction position adjacent along the Y direction is as when inspection described later, the inspection welding zone 82 of probe 9 is checked in contact, checks that welding zone 82 is formed at the outside of IC installation region 60.Check that welding zone 82 has 3-tier architecture, in this 3-tier architecture here,, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that is formed by the oxygen tantalum, and the ITO film 34b that forms simultaneously with pixel electrode 34a, top layer is ITO film 34b.
The ITO film 34b on top layer only is formed in the conductive pattern 8, welding zone 65 is installed and is checked on the welding zone 82, and the 2nd metal level 32c is along the length direction of conductive pattern 8, cuts off drawing around part 83 places.But, on insulation course 32b, forming the removal part 32e that the 1st conductive layer 32a and the 2nd conductive layer 32c directly contacts, the ITO film 34b that constitutes the top layer that welding zone 65 and inspection welding zone 82 are installed passes through the 2nd metal level 32c, is electrically connected with the 1st conductive layer 32a.Thus, the ITO film 34b on top layer that welding zone 65 constitute to be installed and to be checked welding zone 82 is electrically connected with the 2nd conductive layer 32c through the 1st conductive layer 32a, thus, in the integral body of conductive pattern 8, guarantees to conduct easily and positively.
In addition, in device substrate 10, stretching out regional 10a, the conductive pattern 8 that is electrically connected with sweep trace 51a 50 extends from the 2IC installation region, in such conductive pattern 8, according to sweep trace 51a ways of connecting, adopt conducting between substrate.Thus, own at the conductive patterns 8 of 50 extensions from the 2IC installation region, do not form sweep trace 51a, but,, form the installation welding zone of 4 layers of structure with 60 conductive patterns 8 that extend are identical from the 1IC installation region, the inspection welding zone of 3-tier architecture, and the drawing of 2 layers of structure around part.
(main effect of this form)
Like this, in the electro-optical device 1a of this form, the data line 52a that the top layer in the conductive pattern 8 is the 2nd metal level 32c is not from the formation zone of encapsulant 30, expose in the outside, because by encapsulant 30, the coating member of counter substrate 20 grades and covering, it does not expose like this.So in the conductive pattern 8, the part of exposing in the outside in the formation zone of encapsulant 30 is checked welding zone 82 and welding zone 65 is installed only for drawing around part 83.So, for the data line 52a in the conductive pattern 8,, do not adhere to the moisture of extraneous gas etc. yet even be under the situation of the 2nd metal 32c on top layer, thus, galvanic corrosion does not take place.In addition, because the top layer of drawing around part 83 is insulation course 32b, so galvanic corrosion does not take place.In addition, owing to welding zone 65 is installed at the state that IC4 is installed, by anisotropic conductive film 200 sealings, so galvanic corrosion does not take place.Owing to check that the top layer of welding zone 82 is ITO film 34b, so have the possibility that galvanic corrosion takes place, still, if be that the anisotropic conductive spare 200 that is used to install IC4 covers fully, galvanic corrosion does not take place then.In addition, even, take place under the situation of galvanic corrosion owing to check welding zone 82 and exposing from anisotropic conductive spare 200, still be in be used to check after waiting during, so there is not obstruction.In addition, owing to from data line 52a, welding zone 65 is installed is electrically connected by the 1st conductive layer 32a, even checking that welding zone 82 takes place under the situation of galvanic corrosion, conductive pattern 8 does not still break.
In addition, insulation course 32b by anodic oxidation or heated oxide, forms by tantalum monomer film the 1st metal level 32a that tantalum alloy film etc. form as described later.In addition, in conductive pattern 8, each several part is 2 layers of structure, and in 3 layer segments and the 4 layers of structure which kind of is by at the chromium film, and the composition on the ITO film is handled and stipulated that if be such scheme, compare with the method for application of resin, precision is high.So, even installing near the welding zone 65, check that near the top layer of conductive pattern 8 welding zone 82 is under the situation of insulation course, different with the occasion of application of resin, still welding zone 65 be not installed, check on the surface of welding zone 82, form insulation course.
In addition, in this form because will be on the installation welding zone 65 of output usefulness, in the part of extending point-blank along Y direction position adjacent along the Y direction with the welding zone 82 that conducts a survey, so needn't be in the zone that overlaps with IC4 with plane earth (IC installation region 60) inside, inspection welding zone 82 is set.So,, still can positively be provided with and check welding zone 82 even under the situation of the overall dimensions of miniaturization IC4.
(manufacture method of electro-optical device 1a)
Fig. 6 (A)～(F) is in the manufacture method of expression electro-optical device 1a, the process cut-open view of the manufacture method of device substrate;
When manufacturing is used for the substrate substrate 10 of electro-optical device 1a of this form, at first, image pattern 3 (B), shown in Fig. 4 and Fig. 6 (A) like that, on the surface of device substrate 10, form tantalum pentoxide, such as, Ta according to homogeneous thickness
2O
5Film forms hypobasal 14.Then, by the Ta film, TaW etc. are according to homogeneous thickness, by modes such as sputters, form the Ta film, the film of TaW etc., then, adopt photoetching technique, side by side to the 1st metal level 32a of conductive pattern 8 (data line 52a), and the 1st metal level 32a of TFD element 56a carries out composition and handles.At this moment, conductive pattern 8 sides are not connected by the bridge part (not shown) with the 1st metal level 32a of TFD element 56a side.In addition, the 1st metal level 32a connects by power supply figure (not shown).
Then, the state a plurality of device substrates 10 being soaked in the electrolytic solution carries out anodized.At this moment, the 1st metal level 32a by conductive pattern 8 powers, on their surface, image pattern 3 (B), shown in Fig. 4 and Fig. 6 (B) like that, form anode oxide film as insulation course 32b.Then, device substrate 10 is heated, reduce the transposition in the insulation course 32b, the defect concentration of emptying aperture etc.Improve the I/V value of TFD element 56a.In addition, also can when forming insulation course 32b, carry out heated oxide to the 1st metal level 32a.
Then, shown in image pattern 3 (B) and Fig. 6 (C) like that, on insulation course 32b, adopt modes such as photoetching technique, form and remove part 32e.
Then, by modes such as sputters, behind homogeneous thickness formation Cr film, image pattern 3 (B), shown in Fig. 4 and Fig. 6 (D) like that, adopt photoetching technique, form welding zone 65 be installed, the 2nd metal level 32c of data line 52a and 1TFD element 33a, and form the 2nd metal level 32d of 2TFD element 33b.
Afterwards,, the 1st metal level 32a and insulation course 32b are carried out composition handle by dry-etching, image pattern 3 (B), shown in Fig. 4 and Fig. 6 (E) like that, the installation welding zone 71 that connects the input protuberance of flexible base, board 7 and IC4 is separated with conductive pattern 8.At this moment, with bridge part, the power supply figure is removed from device substrate 10.In addition, remove the hypobasal 14 in the zone that is equivalent to pixel electrode 34a, device substrate 10 is exposed.
Then, by modes such as sputters, with homogeneous thickness, form the ITO film, then, pass through photoetching technique, the ITO film is carried out composition to be handled, image pattern 3 (B), shown in Fig. 4 and Fig. 6 (F) like that, the pixel electrode 34a of regulation shape that is equivalent to the size of 1 pixel forms according to the mode that a part overlaps with the 2nd metal level 32d.In addition, be equivalent to install welding zone 65,66,71, checking the part of welding zone 82, residual ITO layer 34b.
Then, on the surface of device substrate 100, form polyimide, polyvinyl alcohol (PVA) etc., thus, form alignment films, then, on alignment films, carry out milled processed and other orientation process with homogeneous thickness, though omit about the diagram of this point,
Afterwards, shown in image pattern 2 and Fig. 3 (B) like that, by divider, serigraphy etc. apply encapsulant 30 in the form of a ring, then, the counter substrate 20 of making separately by encapsulant 30, are fitted on the device substrate 10.Then, in the zone of dividing by encapsulant 30, inject liquid crystal 19, then, liquid crystal injecting port is sealed.
Then, make and check that probe 9 contacts with the inspection welding zone 82 of device substrate 10, by conductive pattern 8, signal is exported to data line 52a and sweep trace 52b, the driving pixel is lighted inspection.
Then, on device substrate 10,, IC4 is installed by anisotropic conductive spare 200,5 and flexible base, board 7, finish electro-optical device 1a.
(embodiment 2)
Fig. 7 is the key diagram of the structure of the conductive pattern of the electro-optical device of expression embodiments of the invention 2.In addition, in the electro-optical device of this form,,, omit description to it so, adopt same label for common part because the electro-optical device of basic structure and embodiment 1 is common.
The inspection welding zone 82 of the electro-optical device of embodiment 1 has 3-tier architecture, wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, and the ITO film 34b that side by side forms with pixel electrode 34a, and shown in the image pattern 7 like that, the inspection welding zone 82 of embodiment 2 has 4 layers of structure, wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, the 2nd metal level 32c that forms by chromium etc., and the ITO film 34b that forms simultaneously with pixel electrode 34a.Other structure is identical with embodiment 1.Promptly, the part of conductive pattern 8 by extending point-blank along the Y direction forms welding zone 65 is installed, then, from welding zone 65 is installed, towards the zone of dividing by encapsulant 30, extend point-blank along the Y direction, constitute and check welding zone 82, then, constitute drawing of along inclined direction extending, then, constitute the data line 52a (signal wire part) that extends point-blank along the Y direction around part 83.Data line 52a is the signal wire part of 3-tier architecture, and wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, and form the 2nd metal level 32c by chromium etc., top layer is the 2nd metal level 32c.Welding zone 65 is installed is had 4 layers of structure, wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, form the 2nd metal level 32c by chromium etc., and the ITO film 34b that forms simultaneously with pixel electrode 34a, top layer is the ITO film 34b of its hardness greater than chromium etc.Draw around part 83 and have 2 layers of structure, it is by the 1st metal level 32a that forms by tantalum monomer film or TaW etc., the insulation course 32b formation that forms by tantalum oxide, and top layer is insulation course 32b.In addition, draw, be in the state that exposes around the part 83 2 layers of structure that the zone that overlaps with one side part plane earth of encapsulant 30 forms of serving as reasons.Relative therewith, the data line 52a that top layer is the 2nd metal level 32c exposes in the outside not from the formation zone of encapsulant 30.
(embodiment 3)
Fig. 8 (A), (B) be respectively the planimetric map of an installation welding zone part of outgoing side of 1IC installation region of device substrate of representing to be used for the electro-optical device of embodiments of the invention 3 in the amplification mode, and the planimetric map of a part of protuberance of representing the outgoing side of the IC that is connected with this installation welding zone in the amplification mode.
In the electro-optical device of embodiment 1, adopt the installation welding zone 65 of outgoing side and the outgoing side welding zone 45 of IC4 to go according to 1, along the directions X structure arranged, but, but also image pattern 8 (A), shown in Fig. 8 (B) like that, the outgoing side welding zone 45 that adopts the installation welding zone 65 of outgoing side and IC4 is according to 2 row, along the directions X structure arranged.Promptly, shown in the image pattern 8 (A) like that, installation region 60 at the 1IC of device substrate 10, installation welding zone 65 as output usefulness, be formed on conductive pattern 8 and extend the 1st installation welding zone 651 (the 1st installs the welding zone group) that side is arranged along directions X, and in the Y direction, the relative the 1st installs welding zone 651, is extending the 2nd installation welding zone 652 (the 2nd installs the welding zone group) that the opposite side of a side is arranged along directions X with conductive pattern 8.In addition, the 1st installation welding zone 651 and the 2nd is installed welding zone 652 in the aligned in position that overlaps along the Y direction.Thus, in a plurality of conductive patterns 8, the 1st conductive pattern 801 that is connected with the 1st installation welding zone 651 extends towards the zone of being divided by encapsulant 30 same as before from the 1st installation welding zone 651, constitutes inspection welding zone 82, draws around part 83 and data line 52a.Relative therewith, the 2nd conductive pattern 802 that is connected with the 2nd installation welding zone 652 is installed welding zone 652, extension obliquely from the 2nd, install between the welding zone 652 by the 1st, then, extend, constitute inspection welding zone 82, draw around part 83 and data line 52a towards the zone of dividing by encapsulant 30.Here, between each the 1st installation welding zone 651, conductive pattern 802 each 1 ground pass, and the 1st welding zone 651 and the 2nd are installed and are installed between the welding zone 652, and the sloping portion of conductive pattern 802 all tilts along same direction.
On the other hand, shown in the image pattern 8 (B) like that, on the installed surface 40 of 1IC4, structure corresponding to 1IC installation region 60, the 1st protuberance 451 (the 1st group of protuberance) that formation is arranged along directions X, the 2nd protuberance of arranging along Y direction position adjacent along directions X at relative these the 1st protuberances 451 452 (the 2nd group of protuberance), the 1st protuberance 451 and the 2nd protuberance 452 are in the aligned in position that overlaps along the Y direction.
Equally in the electro-optical device 1a that constitutes like this, identical with embodiment 1, for installation welding zone 651 in relative output usefulness, 652 formation zone (1IC installation region 60) is along Y direction position adjacent, along the part that the Y direction is extended point-blank, it checks the inspection welding zone 82 of probe 9 as contact when checking.This inspection welding zone 82 has 3-tier architecture, and wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, and the ITO film 34b that forms simultaneously with pixel electrode 34a, and top layer is ITO film 34b.In addition, equally in this form, identical with embodiment 1, data line 52a is the signal wire part of 3-tier architecture, wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that is formed by tantalum oxide, with the 2nd metal level 32c that is formed by chromium etc., top layer is the 2nd metal level 32c.Welding zone 65 is installed is had 4 layers of structure, wherein lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, the 2nd metal level 32c that forms by chromium etc., and the ITO film 34b that forms simultaneously with pixel electrode 34a, top layer is harder ITO film 34b.Draw around part 83 and have the 1st metal level 32a that is formed by tantalum monomer film or TaW etc., with 2 layers of structure that the insulation course 32b that is formed by tantalum oxide forms, top layer is insulation course 32b.
Equally in the occasion that constitutes like this and since draw around part 83 have with top layer be insulation course 32b etc., the broken string that galvanic corrosion causes so do not take place in the structure that embodiment 1 is identical.In addition, in this form, since in the formation zone (IC installation region 60) of the relative installation welding zone 65 of output usefulness along Y direction position adjacent, the part of extending point-blank along the Y direction is with the welding zone 82 that conducts a survey, so needn't be in the zone that overlaps with IC4 with plane earth (IC installation region 60) inside, inspection welding zone 82 is set.Thus, even under the situation of the overall dimensions of miniaturization IC4, still can be provided with really and check welding zone 82.
In addition, at the installed surface 40 of 1IC4,2 groups of protuberances arranging along directions X are arranged at along Y direction adjacent areas, and belong to the installation protuberance 451 of the 1st group of protuberance and belong to the 2nd of the 2nd group of protuberance and protuberance 452 is installed in the aligned in position that overlaps along the Y direction.In addition, the IC installation region 60 of 1IC4 in the device substrate 10,2 groups of installation welding zones arranging along directions X are arranged at along Y direction adjacent areas, belong to the 1st group and the 1st of welding zone is installed welding zone 651 is installed, and belong to the 2nd group and the 2nd of welding zone is installed welding zone 652 is installed in the aligned in position that overlaps along the Y direction.Thus,, installation welding zone 65 (welding zone 651,652 is installed) and protuberance 45 (protuberance 451,452) are set, thus, can be increased in the regulation zone, the quantity that welding zone 65 and output protuberance 45 are installed is set according to 2 rows in this form.In addition, because protuberance 451,452 is installed, and welding zone 651 is installed, 652 aligned in position that overlap along the Y direction mutually, thus anisotropic conductive spare adopted, when 1IC4 is installed, unnecessary amount of resin etc. successfully flows out along the Y direction, and like this, unnecessary anisotropic conductive particle is not detained partly.So realization can prevent that the anisotropic conductive granule partial is detained the effects such as short circuit that cause, reliability that can be higher is installed 1IC4.
(other embodiment)
In above-mentioned form, in conductive pattern 8, form drawing of 2 layers of structure around part 83, wherein, exposing, extending in the integral body of the part of checking welding zone 65 from encapsulant 30, top layer is insulation course 32b, and galvanic corrosion does not take place the occasion that the electric field intensity between adjacent conductive figure 8 is lower.So, in conductive pattern 8, also can form drawing of 2 layers of following structure around part 83, wherein, the part of exposing from encapsulant 30, the narrower part of the spacing between the adjacent conductive figure 8 only, top layer constitutes insulation course 32b.
In addition, welding zone 65 is installed is formed 4 layers of structure, wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, the 2nd metal level 32c that forms by chromium etc., and the ITO film 34b that forms simultaneously with pixel electrode 34a, but, also can form 3-tier architecture, wherein, lamination has the 1st metal level 32a that is formed by tantalum monomer film or TaW etc. successively, the insulation course 32b that forms by tantalum oxide, and the ITO film 34b that forms simultaneously with pixel electrode 34a.In this occasion, ITO film 34b can adopt by being formed at the removal part 32e on the insulation course 32b, directly the structure that is electrically connected with the 1st conductive layer 32a.
In addition, in embodiment 3, the 1st installation welding zone 651 and the 2nd is installed welding zone 652 and is staggered according to 1 spacing along directions X, align along the Y direction, but, welding zone 652 is installed towards directions X even welding zone 651 and the 2nd is installed the 1st, stagger according to half pitch,, still can not adopt the present invention along under the situation of Y direction coincidence.
In addition, in above-mentioned form, because at IC4,5 input side, the spacing broad of conductive pattern, so because of being difficult to take place the reason of situation such as galvanic corrosion etc., only at IC4,5 outgoing side adopts the present invention, still also can be at input side, employing the present invention.
In addition, be for as being mounted the device substrate 10 of body in above-mentioned form, IC4 is routine as the COG installation of wanting fixing body, but also have as electro-optical device 1a, the flexible base, board that COF is installed 1C is connected in the situation of device substrate 10.At this moment, on the device substrate 10, be formed for installing the installation welding zone of flexible base, board, in the zone that seal 30 is divided, form conductive pattern from welding zone is installed.Therefore applicable to this electro-optical device.
Also have, above-mentioned form is used for the example as the active array type liquid-crystal apparatus of the transmission-type of nonlinear element with TFD for the present invention, and still, the present invention also can be used for reflection-type, or the active array type liquid-crystal apparatus of Transflective.In addition, the present invention also can be used for reference to Fig. 9 and Figure 10 and the electro-optical device that provides below.
Fig. 9 is for representing to be adopted by the pixel switch element block scheme of the structure of the electro-optical device that the active array type liquid-crystal apparatus of thin film transistor (TFT) (TFT) forms in a schematic way.In addition, Figure 10 has the block scheme of active array display unit of electroluminescent cell that electro-optical substance adopts the organic film of electric charge injection type.
Shown in the image pattern 9 like that, in the electro-optical device 100b that adopts the active array type liquid-crystal apparatus of TFT to form by the pixel switch element, in being each pixel of rectangular a plurality of pixels, be formed for controlling the TFT130b that the pixel switch of pixel electrode 109b is used, the data line 106b that supplies with picture signal is electrically connected with the source electrode of this TFT130b.The picture signal that writes data line 106b is supplied with from data line drive circuit 102b.In addition, sweep trace 131b is electrically connected with the grid of TFT130b, and in the moment of regulation, sweep signal from scan line drive circuit 103b, is supplied with sweep trace 131b with pulse mode.Pixel electrode 109b is electrically connected with the drain electrode of TFT130b, makes the TFT130b as on-off element be in conducting state during certain, and thus, the picture signal of supplying with from data line 106b writes in each pixel according to the rules constantly.Like this, by pixel electrode 109b, write liquid crystal specified level the sub-picture signal according to remain in it during certain with the opposite electrode that is formed on the counter substrate (diagram omission) between.Here, for the situation of the sub-picture signal leakage that prevents to have kept, according to the liquid crystal capacitance mode arranged side by side that is formed between pixel electrode 109b and the opposite electrode, extra storage electric capacity 170b (capacitor).By this memory capacitance 170b, the voltage ratio of pixel electrode 109b as, according to keeping than long 3 time of the time that adds source voltage.Thus, can realize that the retention performance of electric charge is improved, the electro-optical device of the demonstration that degree of comparing is higher.In addition,, can be situation about being formed at, be formed at any in the situation between the sweep trace 131b of prime as between the electric capacity line 132b of the wiring that is used to form electric capacity as the method that forms memory capacitance 170b.
Same in the liquid-crystal apparatus of such scheme, in the zone that forms by encapsulant, keep liquid crystal, and, outside the zone of dividing by encapsulant, form welding zone and conductive pattern are installed, thus, can adopt the present invention.
Shown in the image pattern 10 like that, active array type electro-optical device 100p with the electroluminescent cell that adopts electric charge injection type organic film is the display of following active array type, wherein, drive controlling flows through luminous EL (electroluminescence) element of mode of organic semiconductor film by drive current by TFT, or the light-emitting component of LED (light emitting diode) element etc., the light-emitting component itself of display that is used for the type is all luminous, thus, have and to require to carry on the back irradiation, in addition, the advantage of the little grade of view angle dependency.
Among the electro-optical device 100p that here provides, form many sweep trace 103p, many data lines 106p according to the direction extension that intersects along bearing of trend with this sweep trace 103p, the many piece common power supply line 123ps arranged side by side with these data lines 106p are corresponding to the pixel 115p of the point of crossing of data line 106p and sweep trace 103p.Relative data line 106p, formation has shift register, level shifter, video line, the data line drive circuit 101p of analog switch.Relative scanning line 103p constitutes the scan line drive circuit 104p with shift register and level shifter.In addition, in each pixel 115p, form sweep signal, supply with the 1TFT131p of gate electrode by sweep trace 103p; Keep by this 1TFT131p the maintenance electric capacity 133p of the picture signal of supplying with from data line; The picture signal that keeps by this maintenance electric capacity 133p is supplied with the 2TFT132p of gate electrode; Passing through 2TFT132p, when being electrically connected with shared supply lines 123p, the light-emitting component 140p that drive current flows into from common power supply line 123p.This light-emitting component 140p adopts the upper layer side at pixel electrode, the lamination hole injection layer, organic semiconductor film as the organic electroluminescent material layer, structure by the film formed opposite electrode of metal of the aluminium that comprises lithium, calcium etc., this opposite electrode is striding across data line 106p etc., and is formed in the scope of a plurality of pixel 115p.
In the electroluminescence type electro-optical device of such structure; because device substrate is by being used to protect light-emitting component 140p etc. not to be subjected to water, the sealing resin of the influence of oxygen covers, outside the resin zone that forms sealing; form welding zone and conductive pattern are installed, so can adopt the present invention.
In addition, even the occasion except the above embodiments, can be used for as electro-optical device, the minitelevision of the slim cathode-ray tube (CRT) of plasma display, FED (Field Emission Display) device, LED (light emitting diode) display, electrophoretic display device (EPD), employing, liquid crystal door (shutter) etc., adopt the various electro-optical devices of the device etc. of digital micro-mirror (DMD).
Above-mentioned electro-optical device can be used as portable telephone, the display part in the various electronic equipments of mobile personal computer etc.
Claims (13)
1. a substrate for electrooptic device when 2 directions of getting quadrature are directions X and Y direction, in this substrate, by the part along the extension of Y direction in a plurality of conductive patterns, forms a plurality of installation welding zones of arranging along directions X; This substrate keeps electro-optical substance in the zone that a plurality of pixels are rectangular arrangement, it is characterized in that:
On this substrate, from lower layer side,, form the 1st conductive layer successively, insulation course, the 2nd conductive layer and the 3rd conductive layer towards upper layer side;
Above-mentioned a plurality of conductive pattern comprises above-mentioned installation welding zone, checks welding zone and draws around part; In above-mentioned installation welding zone, lamination has above-mentioned the 1st conductive layer successively, above-mentioned insulation course and above-mentioned the 3rd conductive layer, and top layer is formed by above-mentioned the 3rd conductive layer; In this checks welding zone, outside the installation region of IC or flexible base, board, with the formation zone position adjacent of above-mentioned installation welding zone, lamination has above-mentioned the 1st conductive layer successively, above-mentioned insulation course and above-mentioned the 3rd conductive layer, top layer is formed by above-mentioned the 3rd conductive layer; Draw in part at this, extending the part that is provided with from above-mentioned inspection welding zone, lamination has above-mentioned the 1st conductive layer and above-mentioned insulation course successively, and top layer is above-mentioned insulation course.
2. substrate for electrooptic device according to claim 1 is characterized in that drawing around part from above-mentioned, extends to be provided with the signal wire part, in this signal wire part, lamination has above-mentioned the 1st conductive layer successively, above-mentioned insulation course and above-mentioned the 2nd conductive layer, and top layer is formed by above-mentioned the 2nd conductive layer.
3. substrate for electrooptic device according to claim 2 is characterized in that above-mentioned signal wire part is covered by coating member, not stretched out the zone by what above-mentioned coating member covered, is provided with above-mentioned installation welding zone, above-mentioned inspection welding zone and above-mentioned drawing around part.
4. according to any one the described substrate for electrooptic device in the claim 1～3, it is characterized in that above-mentioned insulation course only is formed at the face side of above-mentioned the 1st conductive layer selectively.
5. substrate for electrooptic device according to claim 4 is characterized in that above-mentioned the 1st conductive layer is formed by Ta or Ta alloy, and above-mentioned insulation course is by TaO
xForm, above-mentioned the 2nd conductive layer is formed by Cr or Cr alloy, and above-mentioned the 3rd conductive layer is formed by ITO.
6. according to any one the described substrate for electrooptic device in the claim 1～3, it is characterized in that in above-mentioned insulation course, be formed with the removal part, this removal part is used to make the 3rd conductive layer of above-mentioned installation welding zone and above-mentioned inspection welding zone to be electrically connected with above-mentioned the 1st conductive layer.
7. according to any one the described substrate for electrooptic device in the claim 1～3, it is characterized in that in above-mentioned installation welding zone that at the interlayer of above-mentioned insulation course and above-mentioned the 3rd conductive layer, lamination has above-mentioned the 2nd conductive layer.
8. according to any one the described substrate for electrooptic device in the claim 1～3, it is characterized in that in above-mentioned inspection welding zone that at the interlayer of above-mentioned insulation course and above-mentioned the 3rd conductive layer, lamination has above-mentioned the 2nd conductive layer.
9. according to any one the described substrate for electrooptic device in the claim 1～3, it is characterized in that above-mentioned installation welding zone is that welding zone is used in output, this output makes signal export from above-mentioned IC with welding zone.
10. electro-optical device with any one the described substrate for electrooptic device in the claim 1～9 is characterized in that:
Above-mentioned a plurality of conductive pattern is for supplying with the circuit of picture signal, and this circuit extends in the zone that keeps above-mentioned electro-optical substance from the installation region of above-mentioned IC.
11. electro-optical device according to claim 10 is characterized in that on above-mentioned substrate for electrooptic device, in each pixel of above-mentioned a plurality of pixels, forms pixel switch thin film diode element and pixel electrode; This thin film diode element is by above-mentioned the 1st conductive layer, and above-mentioned insulation course and above-mentioned the 2nd conductive layer form; This pixel electrode forms with above-mentioned the 3rd conductive layer that above-mentioned signal wire partly is electrically connected by by above-mentioned thin film diode element.
12. according to claim 10 or 11 described electro-optical devices, it is characterized in that in above-mentioned substrate for electrooptic device,, form resin bed along the outer peripheral edges at least in the zone that keeps above-mentioned electro-optical substance;
In above-mentioned a plurality of conductive pattern, above-mentioned signal wire partly is formed at the inboard in the formation zone of above-mentioned resin bed, and the outside in the formation zone of above-mentioned resin bed forms above-mentioned drawing around part, above-mentioned inspection welding zone and above-mentioned installation welding zone.
13. an electronic equipment is characterized in that this electronic equipment comprises each described electro-optical device of claim 10-12.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP138556/2004 | 2004-05-07 | ||
| JP2004138556 | 2004-05-07 | ||
| JP100110/2005 | 2005-03-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1693941A CN1693941A (en) | 2005-11-09 |
| CN100374913C true CN100374913C (en) | 2008-03-12 |
Family
ID=35352988
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100683875A Expired - Lifetime CN100374913C (en) | 2004-05-07 | 2005-05-08 | Electro-optical device, substrate for electro-optical device, and electronic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100374913C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014176828A1 (en) * | 2013-04-28 | 2014-11-06 | 京东方科技集团股份有限公司 | Flexible substrate, display device, and method for bonding electronic device onto flexible substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532853A (en) * | 1993-03-04 | 1996-07-02 | Samsung Electronics Co., Ltd. | Reparable display device matrix for repairing the electrical connection of a bonding pad to its associated signal line |
| US6323924B1 (en) * | 1997-04-04 | 2001-11-27 | Sanyo Electric Co., Ltd. | Liquid crystal display device |
| CN1359020A (en) * | 2000-11-27 | 2002-07-17 | 株式会社日立制作所 | Liquid crystal display device |
| CN1389756A (en) * | 2001-06-04 | 2003-01-08 | 达碁科技股份有限公司 | Manufacturing method of thin film transistor liquid crystal display |
| JP2003302916A (en) * | 1997-06-17 | 2003-10-24 | Seiko Epson Corp | Electro-optical device substrate, electro-optical device, electronic equipment and projection display device |
| CN1477431A (en) * | 2002-07-30 | 2004-02-25 | 株式会社日立显示器 | Liquid crystal display device |
-
2005
- 2005-05-08 CN CNB2005100683875A patent/CN100374913C/en not_active Expired - Lifetime
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5532853A (en) * | 1993-03-04 | 1996-07-02 | Samsung Electronics Co., Ltd. | Reparable display device matrix for repairing the electrical connection of a bonding pad to its associated signal line |
| US6323924B1 (en) * | 1997-04-04 | 2001-11-27 | Sanyo Electric Co., Ltd. | Liquid crystal display device |
| JP2003302916A (en) * | 1997-06-17 | 2003-10-24 | Seiko Epson Corp | Electro-optical device substrate, electro-optical device, electronic equipment and projection display device |
| CN1359020A (en) * | 2000-11-27 | 2002-07-17 | 株式会社日立制作所 | Liquid crystal display device |
| CN1389756A (en) * | 2001-06-04 | 2003-01-08 | 达碁科技股份有限公司 | Manufacturing method of thin film transistor liquid crystal display |
| CN1477431A (en) * | 2002-07-30 | 2004-02-25 | 株式会社日立显示器 | Liquid crystal display device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014176828A1 (en) * | 2013-04-28 | 2014-11-06 | 京东方科技集团股份有限公司 | Flexible substrate, display device, and method for bonding electronic device onto flexible substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1693941A (en) | 2005-11-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9835905B2 (en) | Display device and electronic apparatus | |
| JP4245650B2 (en) | Active matrix substrate, display device, liquid crystal display device, and television device | |
| US6888606B2 (en) | Electrooptic device and electronic apparatus | |
| JP4142029B2 (en) | Electro-optical device and electronic apparatus | |
| KR100556309B1 (en) | Electrooptic apparatus and manufacturing method of the same, and electron equipment | |
| US9366923B2 (en) | Array substrate and method of fabricating the same, and display device | |
| US6970225B2 (en) | Electrooptic device, method for manufacturing the same, and electronic apparatus | |
| KR20180013452A (en) | Organic light emitting diode display | |
| US9224824B2 (en) | Display device substrate and display device equipped with same | |
| JP2005099301A (en) | Mounting structure, electro-optical device, electronic apparatus, and manufacturing method of mounting structure | |
| US20110310343A1 (en) | Display device, method for manufacturing the same, and active matrix substrate | |
| CN100374913C (en) | Electro-optical device, substrate for electro-optical device, and electronic device | |
| KR100639455B1 (en) | Electrooptic device and electronic apparatus | |
| KR102046297B1 (en) | Display device | |
| JP2005283831A (en) | Electro-optical device and electronic apparatus | |
| JP2005283830A (en) | Mounting structure, electro-optical device, electronic apparatus, mounting structure inspection method, electro-optical device inspection method | |
| JP4356403B2 (en) | Electro-optical device and electronic apparatus including the same | |
| KR101023284B1 (en) | Liquid Crystal Display and Manufacturing Method Thereof | |
| US8368832B2 (en) | LCD panel and method for manufacturing the same | |
| JP2005266683A (en) | Mounting structure, electro-optical device, and electronic apparatus | |
| JP2005215036A (en) | Mounting structure, electro-optical device, and electronic apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20160527 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE TECHNOLOGY GROUP Co.,Ltd. Address before: Hongkong, China Patentee before: BOE Technology (Hongkong) Co.,Ltd. Effective date of registration: 20160527 Address after: Hongkong, China Patentee after: BOE Technology (Hongkong) Co.,Ltd. Address before: Tokyo, Japan Patentee before: Seiko Epson Corp. |
|
| CX01 | Expiry of patent term |
Granted publication date: 20080312 |
|
| CX01 | Expiry of patent term |