CN100377333C - 带有一个或更多通孔的半导体结构 - Google Patents
带有一个或更多通孔的半导体结构 Download PDFInfo
- Publication number
- CN100377333C CN100377333C CNB028252926A CN02825292A CN100377333C CN 100377333 C CN100377333 C CN 100377333C CN B028252926 A CNB028252926 A CN B028252926A CN 02825292 A CN02825292 A CN 02825292A CN 100377333 C CN100377333 C CN 100377333C
- Authority
- CN
- China
- Prior art keywords
- layer
- semiconductor structure
- vias
- semiconductor
- feedthrough
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 claims abstract description 66
- 238000001465 metallisation Methods 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims description 156
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 38
- 238000005530 etching Methods 0.000 claims description 38
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 230000005693 optoelectronics Effects 0.000 claims description 35
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 235000012239 silicon dioxide Nutrition 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 6
- 238000009736 wetting Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000011229 interlayer Substances 0.000 claims description 2
- 239000012790 adhesive layer Substances 0.000 claims 1
- 230000003064 anti-oxidating effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 26
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 19
- 229910000679 solder Inorganic materials 0.000 description 15
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000001816 cooling Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005253 cladding Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VZDYWEUILIUIDF-UHFFFAOYSA-J cerium(4+);disulfate Chemical compound [Ce+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O VZDYWEUILIUIDF-UHFFFAOYSA-J 0.000 description 1
- 229910000355 cerium(IV) sulfate Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008867 communication pathway Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4236—Fixing or mounting methods of the aligned elements
- G02B6/4245—Mounting of the opto-electronic elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4274—Electrical aspects
- G02B6/4279—Radio frequency signal propagation aspects of the electrical connection, high frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/50—Encapsulations or containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49126—Assembling bases
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Optical Integrated Circuits (AREA)
- Element Separation (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32969901P | 2001-10-17 | 2001-10-17 | |
| US60/329,699 | 2001-10-17 | ||
| US10/264,440 US6818464B2 (en) | 2001-10-17 | 2002-10-04 | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
| US10/264,440 | 2002-10-04 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1605126A CN1605126A (zh) | 2005-04-06 |
| CN100377333C true CN100377333C (zh) | 2008-03-26 |
Family
ID=26950546
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB028252926A Expired - Lifetime CN100377333C (zh) | 2001-10-17 | 2002-10-15 | 带有一个或更多通孔的半导体结构 |
Country Status (8)
| Country | Link |
|---|---|
| US (3) | US6818464B2 (fr) |
| EP (1) | EP1436837B1 (fr) |
| JP (1) | JP4546087B2 (fr) |
| CN (1) | CN100377333C (fr) |
| AT (1) | ATE464656T1 (fr) |
| AU (1) | AU2002351771A1 (fr) |
| DE (1) | DE60236007D1 (fr) |
| WO (1) | WO2003034490A2 (fr) |
Families Citing this family (118)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US6932519B2 (en) | 2000-11-16 | 2005-08-23 | Shipley Company, L.L.C. | Optical device package |
| US6827503B2 (en) * | 2000-12-01 | 2004-12-07 | Shipley Company, L.L.C. | Optical device package having a configured frame |
| US6883977B2 (en) * | 2000-12-14 | 2005-04-26 | Shipley Company, L.L.C. | Optical device package for flip-chip mounting |
| US7078671B1 (en) * | 2001-08-06 | 2006-07-18 | Shipley Company, L.L.C. | Silicon optical microbench devices and wafer-level testing thereof |
| US6818464B2 (en) * | 2001-10-17 | 2004-11-16 | Hymite A/S | Double-sided etching technique for providing a semiconductor structure with through-holes, and a feed-through metalization process for sealing the through-holes |
| US7343535B2 (en) * | 2002-02-06 | 2008-03-11 | Avago Technologies General Ip Dte Ltd | Embedded testing capability for integrated serializer/deserializers |
| US6969204B2 (en) * | 2002-11-26 | 2005-11-29 | Hymite A/S | Optical package with an integrated lens and optical assemblies incorporating the package |
| JP4220229B2 (ja) * | 2002-12-16 | 2009-02-04 | 大日本印刷株式会社 | 荷電粒子線露光用マスクブランクスおよび荷電粒子線露光用マスクの製造方法 |
| JP2004273438A (ja) * | 2003-02-17 | 2004-09-30 | Pioneer Electronic Corp | エッチング用マスク |
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Also Published As
| Publication number | Publication date |
|---|---|
| US7057274B2 (en) | 2006-06-06 |
| EP1436837A2 (fr) | 2004-07-14 |
| US20030071283A1 (en) | 2003-04-17 |
| HK1074913A1 (zh) | 2005-11-25 |
| US6818464B2 (en) | 2004-11-16 |
| DE60236007D1 (de) | 2010-05-27 |
| US7081412B2 (en) | 2006-07-25 |
| EP1436837B1 (fr) | 2010-04-14 |
| US20050059204A1 (en) | 2005-03-17 |
| JP2005506701A (ja) | 2005-03-03 |
| ATE464656T1 (de) | 2010-04-15 |
| WO2003034490A3 (fr) | 2004-04-01 |
| WO2003034490A2 (fr) | 2003-04-24 |
| JP4546087B2 (ja) | 2010-09-15 |
| AU2002351771A1 (en) | 2003-04-28 |
| CN1605126A (zh) | 2005-04-06 |
| US20040266038A1 (en) | 2004-12-30 |
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