CN100446977C - Fluid ejection device - Google Patents
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- CN100446977C CN100446977C CNB2004100564852A CN200410056485A CN100446977C CN 100446977 C CN100446977 C CN 100446977C CN B2004100564852 A CNB2004100564852 A CN B2004100564852A CN 200410056485 A CN200410056485 A CN 200410056485A CN 100446977 C CN100446977 C CN 100446977C
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- 239000012530 fluid Substances 0.000 title claims abstract description 152
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- 208000002925 dental caries Diseases 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 86
- 238000005530 etching Methods 0.000 description 23
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 11
- 238000002955 isolation Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 239000011241 protective layer Substances 0.000 description 6
- 230000008054 signal transmission Effects 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
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- 229910004490 TaAl Inorganic materials 0.000 description 2
- 238000000347 anisotropic wet etching Methods 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
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- 238000006467 substitution reaction Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
技术领域 technical field
本发明涉及一种半导体装置,特别是涉及一种流体喷射装置及其制造方法。The present invention relates to a semiconductor device, in particular to a fluid ejection device and a manufacturing method thereof.
背景技术 Background technique
目前,流体喷射技术已广泛应用于各种科技领域的中,例如打印机喷墨头、燃油喷射装置或是生物医学系统如药剂注射机制等的科技产品。At present, the fluid injection technology has been widely used in various technical fields, such as printer inkjet heads, fuel injection devices, or biomedical systems such as pharmaceutical injection mechanisms and other technical products.
公知的流体喷射装置可参见图1加以说明。图1是显示美国专利第6,102,530号所揭示的流体喷射装置,此流体喷射装置包括一硅基材38、一歧管26,以输送流体、流体腔14,设于歧管26的一侧,用以容纳该流体、喷孔18,设于流体腔14的表面,用以供该流体喷出、以及喷射组件20、22,设于喷孔18周围。A known fluid ejection device is illustrated with reference to FIG. 1 . Fig. 1 shows the fluid injection device disclosed in U.S. Patent No. 6,102,530. This fluid injection device includes a
以下特别针对上述流体喷射装置中流体腔14的制造方法加以说明,参阅图2a至图2c。如图2a所示,提供一包括上、下两保护层42、44的基底38。接着,如图2b所示,以非等向性湿蚀刻法蚀刻基底38的背面,以形成一歧管26,并露出替代层40,之后,再以氢氟酸(HF)溶液蚀刻移除替代层40,并再次使用KOH对基材38蚀刻以完成一流体腔14的制作,如图2c所示。The method for manufacturing the
然而,如图3a与3b所示,其中图3a是为一流体腔的光掩模图形,图3b则为蚀刻流体腔后的示意图,当以非等向性湿蚀刻法制造流体腔14时,由于非等向性蚀刻对不同晶格平面有着不同的蚀刻速度,于是过程中势必对隔开流体腔的基材部分30产生蚀刻作用,造成流体腔长度与设计上有所差异,导致流体腔间的相互干扰(cross talk),同时当蚀刻尖点31出现时,也会有应力集中的效应,对结构强度及使用寿命也会造成严重的影响,且结构尺寸越小,此一现象就越益严重。However, as shown in FIGS. 3a and 3b, wherein FIG. 3a is a photomask pattern of a fluid chamber, and FIG. 3b is a schematic diagram after etching the fluid chamber. Anisotropic etching has different etching rates for different lattice planes, so the etching effect is bound to occur on the
发明内容Contents of the invention
有鉴于此,本发明的目的是公开一种流体喷射装置,打算由相同流体腔长度的设计,以改善回填(refill)过程中相互干扰(cross talk)的现象。In view of this, the object of the present invention is to disclose a fluid injection device, which is intended to be designed with the same length of the fluid chamber to improve the phenomenon of cross talk during the refill process.
为了达到上述目的,本发明提供一种流体喷射装置,包括:一基底;一形成于该基底上的结构层;一歧管,该歧管设置于该基底中,以供应流体;多个具有相同长度的流体腔,所述多个具有相同长度的流体腔形成于该基底与该结构层之间并与该歧管连通,以容纳要喷射的流体;多个通道,所述多个通道形成于所述这些流体腔与该歧管之间,其中每一通道两端分别连接一流体腔与该歧管;以及多个喷孔,所述多个喷孔穿过该结构层并与所述这些流体腔连通,以喷射流体。所述这些喷孔与该歧管的距离大体不同。In order to achieve the above object, the present invention provides a fluid ejection device, comprising: a base; a structural layer formed on the base; a manifold, the manifold is arranged in the base to supply fluid; A fluid cavity with the same length is formed between the substrate and the structural layer and communicates with the manifold to accommodate the fluid to be injected; a plurality of channels is formed in the Between the fluid chambers and the manifold, where two ends of each channel are respectively connected to a fluid chamber and the manifold; and a plurality of nozzle holes, the plurality of nozzle holes pass through the structural layer and communicate with the fluids The cavity communicates to inject fluid. The orifices are at substantially different distances from the manifold.
依本发明流体喷射装置的设计,当流体回填时,由于流体腔与歧管之间形成的狭长型通道,使得相互邻近的流体腔不会再因流体扰动过大而产生彼此干扰的现象。According to the design of the fluid injection device of the present invention, when the fluid is backfilled, due to the narrow and long channel formed between the fluid chamber and the manifold, adjacent fluid chambers will no longer interfere with each other due to excessive fluid disturbance.
本发明另提供一种流体喷射装置的制造方法,该多个喷孔包括下列步骤:提供一基底;形成一图形化替代层于该基底上,该图形化替代层是作为一预定形成多个通道以及多个具有相同长度流体腔的区域;形成一图形化结构层于该基底上,并覆盖该图形化替代层;形成一歧管穿过该基底,并露出该图形化替代层;移除该替代层,以完成所述这些通道与所述这些流体腔的制作,其中该流体腔借助该通道与该歧管连通;以及蚀刻该结构层,以形成多个与所述这些流体腔连通的喷孔,其中所述这些喷孔与该歧管的距离大体不同。The present invention also provides a method for manufacturing a fluid ejection device. The plurality of nozzle holes includes the following steps: providing a substrate; forming a patterned substitution layer on the substrate, and the patterned substitution layer is used as a predetermined formation of a plurality of channels and a plurality of areas with the same length of the fluid cavity; forming a patterned structural layer on the substrate, and covering the patterned replacement layer; forming a manifold through the substrate, and exposing the patterned replacement layer; removing the substitute layer to complete the fabrication of the channels and the fluid cavities through which the fluid cavity communicates with the manifold; and etch the structural layer to form a plurality of nozzles in communication with the fluid cavities orifices, wherein the orifices are substantially at different distances from the manifold.
为使本发明的上述目的、特征及优点能更明显易懂,下面特举一较佳实施例,并结合附图,作详细说明如下:In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, a preferred embodiment is specifically cited below, and in conjunction with the accompanying drawings, the detailed description is as follows:
附图说明 Description of drawings
图1是为美国专利第6,102,530号中流体喷射装置的示意图。FIG. 1 is a schematic diagram of a fluid ejection device in US Pat. No. 6,102,530.
图2a至图2c是为美国专利第6,102,530号中流体喷射装置制作的剖面示意图。2a to 2c are schematic cross-sectional views of the fluid ejection device in US Pat. No. 6,102,530.
图3a与图3b是为公知光掩模图形与非等向性蚀刻示意图。3a and 3b are schematic diagrams of conventional photomask patterns and anisotropic etching.
图4a至图4d是为根据本发明的第一实施例的流体喷射装置制作的示意图。4a to 4d are schematic diagrams made for a fluid ejection device according to a first embodiment of the present invention.
图5a与图5b是为根据本发明的第二实施例的流体喷射装置的光掩模图形与蚀刻示意图。5a and 5b are schematic diagrams of photomask patterning and etching of a fluid ejection device according to a second embodiment of the present invention.
图6a与图6b是为根据本发明的第三实施例的流体喷射装置的光掩模图形与蚀刻示意图。6a and 6b are schematic diagrams of photomask patterning and etching of a fluid ejection device according to a third embodiment of the present invention.
图7a与图7b是为根据本发明的第四实施例的流体喷射装置的光掩模图形与蚀刻示意图。7a and 7b are schematic diagrams of photomask patterning and etching of a fluid ejection device according to a fourth embodiment of the present invention.
附图符号说明:Explanation of reference symbols:
公知部份(图1、图2a至图2c以及图3a与3b)Known parts (Fig. 1, Fig. 2a to Fig. 2c and Fig. 3a and 3b)
14~流体腔;14 ~ fluid cavity;
18~喷孔;18 ~ spray hole;
20、22~喷射组件;20, 22~jet assembly;
26~歧管;26 ~ manifold;
30、38~基材;30, 38 ~ substrate;
31~蚀刻尖点;31~etching sharp point;
40~替代层;40~replacement layer;
42、44~保护层。42, 44 ~ protective layer.
本发明实施例部份(图4a至图4c、图5a与图5b、图6a与图6b以及图7a与图7b)Part of the embodiment of the present invention (Figure 4a to Figure 4c, Figure 5a and Figure 5b, Figure 6a and Figure 6b and Figure 7a and Figure 7b)
Lc~流体腔长度;Lc~fluid chamber length;
Ln~颈部结构长度;Ln~neck structure length;
Wch~连接处宽度;Wch~joint width;
Wn~颈部结构宽度;Wn~neck structure width;
400~基底;400~base;
405~替代层;405~replacement layer;
410、510、610、710~歧管;410, 510, 610, 710~manifold;
420、520、620、720~流体腔;420, 520, 620, 720 ~ fluid cavity;
430~通道;430 ~ channel;
525、625、725~颈部结构;525, 625, 725~neck structure;
530~连接处;530~connection;
440~结构层;440~structural layer;
450~电阻层;450~resistive layer;
460~隔离层;460~isolation layer;
470~导电层;470~conductive layer;
480~保护层;480~protective layer;
490~讯号传送线路接触窗;490~Signal transmission line contact window;
495~喷孔;495~nozzle hole;
θ~夹角;θ~angle;
具体实施方式 Detailed ways
实施例1Example 1
本实施例流体喷射装置的构成特征为,如图4d所示,流体腔420与歧管410之间形成一狭长通道430,使所述这些流体腔420的长度(Lc)维持相同。The structural feature of the fluid injection device in this embodiment is that, as shown in FIG. 4 d , a long and
参阅图4b(剖面示意图)以及图4d(俯视示意图),说明本实施例流体喷射装置的构成,其中图4b是为图4d沿4b-4b剖切线的剖面图。如图4b所示,该流体喷射装置包括一基底400、一歧管410、流体腔420、通道430、一结构层440、一电阻层450、一隔离层460、一导电层470、一保护层480、多个讯号传送线路接触窗490以及多个喷孔495。其中歧管410形成于基底400中,流体腔420与通道430形成于基底400与结构层440之间,且由于通道430的设计使流体腔420的长度均一致,如图4d所示。Referring to FIG. 4b (schematic cross-sectional view) and FIG. 4d (schematic top view), the composition of the fluid ejection device of this embodiment is illustrated, wherein FIG. 4b is a cross-sectional view along the
结构层440覆盖于基底400、通道430以及流体腔420上。电阻层450设置于结构层440上,且位于喷孔495两侧,其代表多个流体喷射致动器例如为加热器,使流体经由喷射致动器驱动后,由喷孔495喷出。隔离层460覆盖于基底400、结构层440以及电阻层450上,但露出部分电阻层450,以形成加热器接触窗。导电层470覆盖于隔离层460上,并填入加热器接触窗,作为讯号传送线路。The
保护层480覆盖于隔离层460以及导电层470上,并露出部分导电层470,形成有多个讯号传送线路接触窗490,以利后续的封装作业。另外多个喷孔495穿过保护层480、导电层470、电阻层450以及结构层440的各层,并与流体腔420连通。The
接着参阅图4a至图4c,说明本发明的一实施例的流体喷射装置的制作。首先,如图4a所示,提供一基底400,例如一硅基底,基底400的厚度大体介于625~675微米。接着,进行本实施例的一特征步骤,图形化替代层405的制作,首先,形成一替代层于基底400的一第一面4001上,之后,以一具有通道与流体腔图形布局的光掩模,如图4c所示,对该替代层进行曝光,经显影后即形成一包括一通道图形与一流体腔图形的图形化替代层405,其中形成流体腔图形的长度均一致。Next, referring to FIG. 4a to FIG. 4c , the fabrication of the fluid ejection device according to an embodiment of the present invention will be described. First, as shown in FIG. 4a, a
替代层405由硼磷硅玻璃(BPSG)、磷硅玻璃(PSG)或氧化硅材料所构成,其中以磷硅玻璃为较佳的选择,替代层405的厚度大体介于1~2微米。The
接着形成一图形化结构层440于基底400上,且覆盖图形化替代层405,结构层440可为由化学气相沉积法(CVD)所形成的一氮氧化硅层,结构层440的厚度大体介于1.5~2微米。此外,结构层440为一低应力材料,其应力值大体介于100~200百万帕(MPa)的拉应力。Then form a patterned
接着,形成一图形化电阻层450于结构层440上,以做为流体喷射致动器例如为加热器,使流体经由喷射致动器驱动后,由后续制作的喷孔喷出,电阻层450由HfB2、TaAl、TaN或TiN所构成,其中以TaAl为较佳的选择。Next, a patterned
再形成一图形化隔离层460,覆盖基底400、结构层440以及电阻层450,且形成加热器接触窗之后,形成一图形化导电层470于隔离层460上,并填入加热器接触窗,以形成讯号传送线路。最后,形成一保护层480于隔离层460与导电层470上,且形成讯号传送线路接触窗490,使导电层470露出,以利后续封装作业。A
接下来,参见图4b,开始进行一连串的蚀刻,以形成最终的流体喷射装置。首先,以非等向性的湿蚀刻法,蚀刻液例如为氢氧化钾(KOH)溶液,蚀刻基底400的背面,即一第二面4002,以形成一歧管410,并露出图形化替代层405。Next, referring to Figure 4b, a series of etchs are initiated to form the final fluid ejection device. First, by anisotropic wet etching method, the etchant is, for example, potassium hydroxide (KOH) solution, etch the back side of the
歧管410的窄开口宽度大体介于160~200微米,宽开口宽度大体介于1100~1200微米,其内壁与水平线夹角θ大体为54.74度,于是蚀刻之后的歧管410为一下宽上窄的形状结构,而歧管410向下与一流体储存槽相互连通。The width of the narrow opening of the manifold 410 is approximately 160-200 microns, and the width of the wide opening is approximately 1100-1200 microns. The angle θ between the inner wall and the horizontal line is approximately 54.74 degrees, so the manifold 410 after etching is wide at the bottom and narrow at the top. The shape structure, and the manifold 410 communicates with a fluid storage tank downward.
接着用含氢氟酸(HF)溶液的湿蚀刻法,蚀刻图形化替代层405,之后,再度以蚀刻液例如为氢氧化钾(KOH)溶液的湿蚀刻法蚀刻基底400,以扩大图形化替代层405被掏空的区域,而形成流体腔420与通道430。通道430形成于流体腔420与歧管410之间,且由于通道430的特殊设计使所述这些流体腔420的长度(Lc)均相同,如图4d所示。Then use a wet etching method containing hydrofluoric acid (HF) solution to etch the patterned
最后,依序蚀刻保护层480、隔离层460与结构层440,以形成与流体腔420连通的喷孔495,其中喷孔495与歧管410的距离大体不同。蚀刻是利用等离子蚀刻、化学气体蚀刻、反应性离子蚀刻或激光蚀刻法。至此,即完成一流体喷射装置的制作。Finally, the
本实施例利用光掩模上歧管-通道-流体腔的特殊连接布局,在蚀刻速率较快的方向作补偿,而维持了流体腔间长度的一致性,明显改善流体回填至某一流体腔时易干扰邻近流体腔喷墨效果的现象。This embodiment utilizes the special connection layout of the manifold-channel-fluid cavity on the photomask to compensate in the direction of faster etching rate, thereby maintaining the consistency of the length between the fluid cavities and significantly improving the time when the fluid is backfilled into a certain fluid cavity. A phenomenon that tends to interfere with the inkjet effect of adjacent fluid chambers.
实施例2Example 2
本实施例流体喷射装置的构成特征为,如图5b所示,流体腔520与歧管510之间形成一颈部结构525,使所述这些流体腔520的长度(Lc)维持相同,且颈部结构525向内与歧管510连接处530的宽度(Wch)也维持相同,本实施例与实施例1的差异在于,实施例1仅维持流体腔420的长度相同,而本实施例除所有流体腔520长度均相同外,另加设的颈部结构525,其向内与歧管510连接处530的宽度(Wch)也均相同。The compositional feature of the fluid injection device in this embodiment is that, as shown in FIG. The width (Wch) of the joint 530 between the internal structure 525 and the manifold 510 is also kept the same. In addition to the same length of the
本实施例流体喷射装置的制造步骤与实施例1的步骤大体相同,仅在图形化替代层的图形形成上有所差异,以下即就本实施例与实施例1的差异部分作说明。在形成一替代层于基底的一第一面上后,以一具有颈部结构与流体腔图形布局的光掩模,如图5a所示,对该替代层进行曝光,经显影后即形成一包括一颈部结构图形与一流体腔图形的图形化替代层,其中形成流体腔图形的长度均一致。The manufacturing steps of the fluid ejection device in this embodiment are substantially the same as those in Embodiment 1, except for the pattern formation of the patterned replacement layer. The differences between this embodiment and Embodiment 1 will be described below. After forming a replacement layer on a first surface of the substrate, use a photomask with a neck structure and a fluid cavity pattern layout, as shown in Figure 5a, to expose the replacement layer, and form a It includes a patterned replacement layer of a neck structure pattern and a fluid chamber pattern, wherein the lengths of the fluid chamber patterns are consistent.
在各半导体层完成沉积步骤后,开始进行一连串的蚀刻,以形成最终的流体喷射装置。蚀刻后形成流体腔520与颈部结构525。颈部结构525形成于流体腔520与歧管510之间,由于颈部结构525的特殊设计使所述这些流体腔520的长度(Lc)均相同,另外颈部结构525向内与歧管510连接处530的宽度(Wch)也均相同,如图5b所示。After each semiconductor layer is deposited, a series of etching processes are performed to form the final fluid ejection device. The
本实施例歧管-颈部结构-流体腔特殊连接布局的光掩模,其呈矩形、狭长设计的颈部结构,使流体腔维持一固定尺寸,且颈部结构向内与歧管连接处的相同宽度,也明显改善邻近腔室的干扰现象,此外,因光掩模中增加如图3b所示间隔30前端部位的面积而有效减缓了蚀刻尖角的出现。In this embodiment, the manifold-neck structure-fluid cavity special connection layout of the photomask has a rectangular, narrow and long neck structure to maintain a fixed size of the fluid cavity, and the neck structure is inwardly connected to the manifold With the same width, the interference phenomenon of adjacent chambers is also significantly improved. In addition, the appearance of etching sharp corners is effectively slowed down because the area of the front end of the
实施例3Example 3
本实施例流体喷射装置的构成特征为,如图6b所示,流体腔620与歧管610之间形成一颈部结构625,使所述这些流体腔620的长度(Lc)维持相同,且颈部结构625的长度(Ln)也均相同,本实施例与实施例2的差异在于,实施例2未设定颈部结构525的长短,而本实施例则设计颈部结构625的长度(Ln)均相同。The compositional feature of the fluid injection device in this embodiment is that, as shown in FIG. The length (Ln) of the
本实施例流体喷射装置的制造步骤与实施例2的步骤大体相同,仅在图形化替代层的图形形成上有所差异,以下即就本实施例与实施例2的差异部分作说明。在形成一替代层于基底的一第一面上后,以一具有颈部结构与流体腔图形布局的光掩模,如图6a所示,对该替代层进行曝光,经显影后即形成一包括一颈部结构图形与一流体腔图形的图形化替代层,其中形成流体腔图形的长度均一致,且颈部结构图形的长度也均相同。The manufacturing steps of the fluid ejection device in this embodiment are substantially the same as those in Embodiment 2, except for the pattern formation of the patterned replacement layer. The difference between this embodiment and Embodiment 2 will be described below. After forming a replacement layer on a first surface of the substrate, use a photomask with a neck structure and a fluid chamber pattern layout, as shown in Figure 6a, to expose the replacement layer, and form a It includes a patterned replacement layer of a neck structure pattern and a fluid chamber pattern, wherein the lengths of the fluid chamber patterns formed are the same, and the lengths of the neck structure patterns are also the same.
在各半导体层完成沉积步骤后,开始进行一连串的蚀刻,以形成最终的流体喷射装置。蚀刻后形成流体腔620与颈部结构625。颈部结构625形成于流体腔620与歧管610之间,由于颈部结构625的特殊设计使所述这些流体腔620的长度(Lc)均相同,另外颈部结构625的长度也维持相同,如图6b所示。After each semiconductor layer is deposited, a series of etching processes are performed to form the final fluid ejection device.
本实施例歧管-颈部结构-流体腔特殊连接布局的光掩模,其颈部结构的设计,使流体腔维持一固定尺寸,且该相同长度的颈部结构,除改善干扰的现象外,对控制流阻也助益甚多。In this embodiment, the manifold-neck structure-fluid cavity special connection layout of the photomask, the neck structure is designed to maintain a fixed size of the fluid cavity, and the neck structure of the same length, in addition to improving the phenomenon of interference , It also helps a lot in controlling flow resistance.
实施例4Example 4
本实施例流体喷射装置的构成特征为,如图7b所示,流体腔720与歧管710之间形成一颈部结构725,使所述这些流体腔720的长度(Lc)均相同,且颈部结构725的长度(Ln)也均相同,而其宽度(Wn)随流体腔720远离歧管710的距离而增加,本实施例与实施例3的差异在于,实施例3未设定颈部结构625的宽窄,而本实施例中颈部结构725的宽度(Wn)随流体腔720远离歧管710的距离而增加。The compositional feature of the fluid injection device in this embodiment is that, as shown in FIG. The length (Ln) of the
本实施例流体喷射装置的制造步骤与实施例3的步骤大体相同,仅在图形化替代层的图形形成上有所差异,以下即就本实施例与实施例3的差异部分作说明。在形成一替代层于基底的一第一面上后,以一具有颈部结构与流体腔图形布局的光掩模,如图7a所示,对该替代层进行曝光,经显影后即形成一包括一颈部结构图形与一流体腔图形的图形化替代层,其中形成流体腔图形的长度均一致,且颈部结构图形的长度也均相同,另颈部结构图形的宽度随流体腔图形远离未来形成歧管位置的距离而增加。The manufacturing steps of the fluid ejection device in this embodiment are substantially the same as those in Embodiment 3, except for the pattern formation of the patterned replacement layer. The differences between this embodiment and Embodiment 3 will be described below. After forming a replacement layer on a first surface of the substrate, use a photomask with a neck structure and a fluid cavity pattern layout, as shown in Figure 7a, to expose the replacement layer, and form a It includes a graphic replacement layer of a neck structure figure and a fluid cavity figure, wherein the lengths of the fluid cavity figures formed are the same, and the lengths of the neck structure figures are also the same, and the width of the neck structure figure is far from the future with the fluid cavity figure The distance that forms the manifold position increases.
在各半导体层完成沉积步骤后,开始进行一连串的蚀刻工艺,以形成最终的流体喷射装置。蚀刻后形成流体腔720与颈部结构725。颈部结构725形成于流体腔720与歧管710之间,由于颈部结构725的特殊设计使所述这些流体腔720的长度(Lc)均相同,且颈部结构725的长度也维持相同,另外颈部结构725的宽度随流体腔720远离歧管710的距离而增加,例如Wn3>Wn2>Wn1,如图7b所示。After each semiconductor layer is deposited, a series of etching processes are performed to form the final fluid ejection device.
本实施例歧管-颈部结构-流体腔特殊连接布局的光掩模,其颈部结构的设计,使流体腔维持一固定尺寸,且颈部结构宽度的变动,精确控制了各流体腔的流阻,大幅提高喷射装置的喷墨品质。In this embodiment, the manifold-neck structure-fluid cavity special connection layout of the photomask, the design of the neck structure, makes the fluid cavity maintain a fixed size, and the change of the width of the neck structure accurately controls the size of each fluid cavity. The flow resistance greatly improves the inkjet quality of the jetting device.
虽然本发明已以较佳实施例公开如上,然而其并非用以限定本发明,任何本技术领域的普通技术人员,在不脱离本发明的精神和范围内,当然可作更动与润饰,因此本发明的保护范围应以权利要求书范围所界定的为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can certainly make changes and modifications without departing from the spirit and scope of the present invention. Therefore, The protection scope of the present invention should be defined by the claims.
Claims (18)
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59199256A (en) * | 1983-04-28 | 1984-11-12 | Canon Inc | Liquid jet recording method |
| JPS62169657A (en) * | 1986-01-22 | 1987-07-25 | Canon Inc | Liquid jet recording head |
| JPS62225364A (en) * | 1986-03-27 | 1987-10-03 | Nec Corp | Printing head for ink jet printer |
| US5751317A (en) * | 1996-04-15 | 1998-05-12 | Xerox Corporation | Thermal ink-jet printhead with an optimized fluid flow channel in each ejector |
| US5757391A (en) * | 1994-07-20 | 1998-05-26 | Spectra, Inc. | High-frequency drop-on-demand ink jet system |
| US6102530A (en) * | 1998-01-23 | 2000-08-15 | Kim; Chang-Jin | Apparatus and method for using bubble as virtual valve in microinjector to eject fluid |
-
2004
- 2004-08-11 CN CNB2004100564852A patent/CN100446977C/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59199256A (en) * | 1983-04-28 | 1984-11-12 | Canon Inc | Liquid jet recording method |
| JPS62169657A (en) * | 1986-01-22 | 1987-07-25 | Canon Inc | Liquid jet recording head |
| JPS62225364A (en) * | 1986-03-27 | 1987-10-03 | Nec Corp | Printing head for ink jet printer |
| US5757391A (en) * | 1994-07-20 | 1998-05-26 | Spectra, Inc. | High-frequency drop-on-demand ink jet system |
| US5751317A (en) * | 1996-04-15 | 1998-05-12 | Xerox Corporation | Thermal ink-jet printhead with an optimized fluid flow channel in each ejector |
| US6102530A (en) * | 1998-01-23 | 2000-08-15 | Kim; Chang-Jin | Apparatus and method for using bubble as virtual valve in microinjector to eject fluid |
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