CN100457960C - Shielding with isolation layer and process equipment comprising same - Google Patents

Abstract

A shielding device and a vapor deposition process device used in cooperation with the shielding device. The shielding device mainly comprises a shielding body and an isolation layer. The shielding body comprises an evaporation source surface corresponding to the evaporation source, and the isolation layer is formed on the evaporation source surface. The contact angle of the isolating layer is larger than that of the evaporation source surface. The evaporation process equipment mainly comprises an evaporation unit, an isolation layer forming unit and a shielding transmission device. The isolation layer forming unit is connected with the evaporation unit. The shielding transmission device is respectively connected to the inside of the evaporation unit and the isolation layer forming unit. After the shielding device completes the reaction in the isolation layer forming unit and forms the isolation layer, the shielding transmission device transmits the shielding device with the isolation layer to the evaporation coating unit for evaporation coating.

Description

Shielding with separation layer and process equipment incorporating such shielding

technical field

The present invention relates to a shielding device and vapor deposition process equipment used in conjunction with it; specifically, the present invention relates to a shielding device and vapor deposition process equipment used in conjunction with it, which are used for vapor deposition on a substrate.

Background technique

Evaporation process has been widely used in thin film process, semiconductor wafer process and other precision processes. The general evaporation process is to combine the substrate to be evaporated with the shield, and then send it into the evaporation chamber to perform the evaporation process. There are a plurality of preset tiny openings on the shield, so that the evaporated material can penetrate through the shield and be deposited on the predetermined position on the substrate to form the desired finished product.

FIG. 1 a shows a conventional evaporation chamber 40 , a substrate 30 and a shield 10 . As shown in FIG. 1 a , in order to achieve precise alignment of evaporation, it is necessary to closely combine the shield 10 with the substrate 30 to be evaporated. In addition, the tight combination of the shield 10 and the substrate 30 can avoid the evaporation pattern from blurring.

FIG. 1 b shows the evaporation process equipment in the prior art, which mainly includes an organic evaporation chamber 41 , a metal evaporation chamber 43 , an encapsulation chamber 45 and a transfer chamber 90 therebetween. The combined shield 10 and substrate 30 are subjected to an evaporation procedure in the above-mentioned evaporation process equipment.

Since the shield 10 and the substrate 30 are closely combined in the evaporation process, the cleanliness of the shield has a considerable influence on the yield of subsequent finished products. If there is too much attachment on the shield, it will be transferred to the substrate 30 during the process and form dark spots. Therefore, in the traditional process, the shield 10 needs to be regularly removed from the evaporation process equipment and cleaned to remove the attachments thereon. However, due to the mechanical strength of the shield 10 itself, its surface is mostly unprocessed. Therefore, the attachments contaminated on the surface of the shield 10 are not easy to remove, which increases the difficulty of the cleaning procedure.

Contents of the invention

The main purpose of the present invention is to provide a shielding device with high reusability.

Another object of the present invention is to provide a shielding device that can improve the yield of finished products.

Another object of the present invention is to provide a shielding device with high cleanability.

Another object of the present invention is to provide an evaporation process equipment that can effectively clean the shielding device after use.

Another object of the present invention is to provide an evaporation process equipment that can improve the yield of finished products.

The shielding device of the present invention is used in conjunction with the substrate, and mainly includes a shielding body and an isolation layer. The shielding body includes an evaporation source surface corresponding to the evaporation source. The isolation layer is formed on the evaporation source surface, so that the shielding body is located between the isolation layer and the substrate. The contact angle of the isolation layer is larger than that of the evaporation source surface. In addition, the surface tension of the isolation layer is greater than that of the evaporation source surface. Therefore, the adhesion of the attachment to the isolation layer is smaller than that of the attachment to the evaporation source surface. In other words, the attachments attached to the isolation layer are easier to remove.

In a preferred embodiment, the isolation layer is made of plasma-induced polymerized fluorocarbon and has a contact angle greater than 80 degrees.

The present invention also includes evaporation process equipment using the above shielding device, which mainly includes: an evaporation unit, an isolation layer forming unit and a shielding transmission device. The isolation layer forming unit is connected to the vapor deposition unit. The shield transmission device is respectively connected to the interior of the vapor deposition unit and the isolation layer forming unit. Before the shielding device is sent into the evaporation unit by the shielding transfer device to perform the evaporation process, it needs to enter the isolation layer forming unit for processing. After the shielding device completes the reaction in the isolation layer forming unit and forms the isolation layer, the shielding transfer device transfers the shielding device with the isolation layer to the evaporation unit for evaporation.

Description of drawings

Figure 1a is a schematic diagram of an evaporation device and a shielding device in the prior art;

Fig. 1b is the schematic diagram of evaporation process equipment in the prior art;

2 is a schematic diagram of an embodiment of an evaporation unit and a shielding device in the present invention;

Fig. 3 is an exploded view of components of an embodiment of a shielding device in the present invention;

4 is a schematic diagram of an embodiment of an isolation layer forming unit and a shielding device in the present invention;

Fig. 5 is a schematic diagram of the contact angle between the isolation layer and the contact surface;

Fig. 6 is a schematic diagram of another embodiment of the present invention;

7 is a schematic diagram of an embodiment of the evaporation process equipment of the present invention;

8 is a schematic diagram of another embodiment of the evaporation process equipment of the present invention;

FIG. 9 is a schematic diagram of another embodiment of the evaporation process equipment of the present invention.

Explanation of main component symbols

10 Shield

30 substrates

40 evaporation chamber

41 organic evaporation chamber

43 metal evaporation chamber

45 packaging chamber

90 Teleportation Room

100 shielding device

110 shield body

111 evaporation source surface

113 contact surface

130 isolation layer

150 substrate isolation layer

300 substrates

350 evaporation source

400 plasma reaction chamber

410 fluorocarbon gas introduction device

500 droplets

510 tangent

600 evaporation units

610 evaporation chamber

700 isolation layer forming units

750 shielded cleaning unit

800 shielded transmission device

810 first transmission direction

820 second transmission direction

900 Transfer Room

Detailed ways

The present invention provides a shielding device 100 for use with a substrate 300 in an evaporation process. The present invention also includes an evaporation process equipment using the above-mentioned shielding device 100 . In a preferred embodiment, the evaporation process includes organic evaporation, chemical evaporation and other evaporation processes suitable for precision processes. In addition, the substrate 300 mentioned here preferably includes conventional substrates, thin films and other materials that can be subjected to evaporation processes.

As shown in FIG. 2 and FIG. 3 , the shielding device 100 of the present invention mainly includes a shielding body 110 and an isolation layer 130 . The shielding body 110 includes an evaporation source surface 111 , and the evaporation source surface 111 is a side of the shielding body 110 corresponding to the evaporation source 350 . In a preferred embodiment, the shielding body 110 is made of extremely thin metal material. However, in different embodiments, the shielding body 110 may also be made of other materials suitable as an evaporation shield. In addition, the shielding body 110 has a plurality of micro-openings, so that the evaporation material can penetrate the shielding body 110 and deposit on the predetermined position on the substrate 300 .

As shown in FIG. 2 , the isolation layer 130 is formed on the evaporation source surface 111 and is located between the evaporation source surface 111 and the evaporation source 350 . In other words, the shielding body 110 is located between the isolation layer 130 and the substrate 300 . In a preferred embodiment, the isolation layer 130 is formed on the evaporation source surface 111 by plasma-induced polymerization. Therefore, the isolation layer 130 also has a plurality of micro-openings corresponding to the micro-openings on the shielding body 110 . However, in different embodiments, the isolation layer 130 can also be formed on the evaporation source surface 111 by other methods such as attachment, sputtering and the like.

In order to meet the requirements of general design and quality control, the thickness of the isolation layer 130 is preferably less than 5 micrometers (μm), that is, less than or equal to 5 μm. In a special process, when the thickness of the isolation layer 130 is between 1 micron and 5 microns, the shadow effect generated during evaporation can be effectively controlled to obtain the desired evaporation result. In addition, when the shadow effect needs to be avoided as a result of evaporation, the thickness of the isolation layer 130 can also be limited to less than 10 nanometers (nm).

The isolation layer 130 is preferably composed of fluorocarbon, however, in different embodiments, the isolation layer 130 can be a plasma induced polymer layer. In the embodiment shown in FIG. 4 , the shielding body 110 is sent into the plasma reaction chamber 400 , and the polymer isolation layer 130 is formed on the evaporation source surface 111 by a plasma process. In addition, in this embodiment, fluorocarbon gas is preferably used as the working gas to form the isolation layer 130 formed by plasma-induced polymerization of fluorocarbon on the evaporation source surface 111 .

In the embodiment shown in FIG. 4 , the reaction time for the shielding body 110 to perform the plasma process to form the isolation layer 130 depends on the thickness of the isolation layer 130 to be formed. In a preferred embodiment, the reaction time is controlled between 10 seconds and 100 seconds. The temperature during the reaction should not cause excessive deformation of the shielding body 110 as a principle. In a preferred embodiment, the temperature during the reaction is controlled around room temperature.

As shown in FIG. 5 , the contact angle θ ₁ of the isolation layer 130 is greater than the contact angle θ ₂ of the evaporation source surface 111 . The contact angle mentioned here is measured with water as the standard droplet 500 . When the droplet 500 is placed on the surface to be measured, the angle between the tangent line 510 drawn by the intersection point of the edge of the droplet 500 and the surface to be measured and the surface to be measured on the side of the droplet 500 is the contact angle. In the embodiment shown in FIG. 5, the isolation layer 130 preferably has a contact angle greater than 80 degrees.

As shown in Figure 5, the contact area of the droplet 500 with the isolation layer 130 when attached to the isolation layer 130 is a ₁ ; the contact area of the same droplet 500 with the evaporation source surface 111 when attached to the evaporation source surface 111 is a ₂ . Since the contact angle θ ₁ of the isolation layer 130 is greater than the contact angle θ ₂ of the evaporation source surface 111 , the contact area a ₁ is smaller than the contact area a ₂ . The same principle can also be applied to attachments other than water. The contact area of attachments of the same nature when attached to the isolation layer 130 is smaller than that when attached to the evaporation source surface 111 . In other words, the isolation layer 130 has a higher surface tension than the evaporation source surface 111 , which can reduce the contact area when the deposits are attached.

The surface tension of a particular surface has a positive correlation with the contact angle. When the contact angle is larger, it means that the surface tension of a specific surface is also larger. The surface tension mentioned here refers to the component force that can be distributed along the surface when a specific surface is in contact with the attachment. When the surface tension is weak, the attachment relationship between the attachment and the surface is relatively close. When the surface tension is strong, the attachment relationship between the attachment and the surface is weak. As shown in Figure 5, since the surface tension of the isolation layer 130 is stronger than that of the evaporation source surface 111, the attachment relationship of the droplet 500 to the evaporation source surface 111 is as follows: close. In other words, when the attachment adheres to the evaporation source surface 111 , it is less likely to separate.

There is a negative correlation between the adhesion of the attachment and the contact angle, and the larger the contact angle, the smaller the adhesion of the attachment. Since the contact angle θ ₁ of the attachment when attached to the isolation layer 130 is greater than the contact angle θ ₂ when attached to the evaporation source surface 111, compared with the evaporation source surface 111, the attachment of the same nature has a smaller effect on the isolation layer 130. Little adhesion. In other words, if both the isolation layer 130 and the evaporation source surface 111 have attachments, the attachments on the isolation layer 130 are easier to remove.

During the evaporation process, unwanted deposits often adhere to the shielding device 100 . If not properly cleaned, it often affects the yield of the product. Since the isolation layer 130 has a larger contact angle and surface tension than the evaporation source surface 111 , covering the evaporation source surface with the isolation layer 130 can reduce the difficulty of cleaning the attachments on the shielding device 100 .

Figure 6 shows another embodiment of the present invention. In this embodiment, the shielding device 100 further includes a contact surface 113 , and the contact surface 113 is located on the opposite side of the evaporation source surface 111 . A substrate isolation layer 150 is formed on the contact surface 113 . In a preferred embodiment, the substrate isolation layer 150 is formed on the contact surface 113 by plasma-induced polymerization. Therefore, the substrate isolation layer 150 also has a plurality of micro-openings corresponding to the micro-openings on the shielding body 110 . However, in different embodiments, the substrate isolation layer 150 can also be formed on the contact surface 113 by other methods such as attachment, sputtering and the like.

In order to meet the requirements of general design and quality control, the thickness of the substrate isolation layer 150 is preferably less than 5 micrometers (μm), that is, less than or equal to 5 μm. In a special process, when the thickness of the substrate isolation layer 150 is between 1 micron and 5 microns, the shadow effect generated during evaporation can be effectively controlled to obtain the desired evaporation result. In addition, when the shadow effect needs to be avoided as a result of evaporation, the thickness of the substrate isolation layer 150 can also be limited to less than 10 nanometers (nm).

The substrate isolation layer 150 is preferably composed of fluorocarbon, however, in different embodiments, the substrate isolation layer 150 may be a plasma-induced polymer polymerization layer. The contact angle of the substrate isolation layer 150 is greater than that of the contact surface 113 . The contact angle mentioned here is based on water as a standard droplet for measurement. In a preferred embodiment, the substrate isolation layer 150 has a contact angle greater than 80 degrees. In addition, in a preferred embodiment, the formation method of the substrate isolation layer 150 is the same as or similar to that of the isolation layer 130 .

The present invention further includes evaporation process equipment using the above-mentioned shielding device 100 . As shown in FIG. 7 , the evaporation process equipment of the present invention includes an evaporation unit 600 , an isolation layer forming unit 700 and a shielding transmission device 800 . The evaporation unit 600 preferably includes an evaporation chamber 610, as shown in FIG. 2 . In a preferred embodiment, the evaporation unit 600 includes evaporation devices such as an organic evaporation chamber and a metal evaporation chamber. However, in different embodiments, the evaporation unit 600 also includes other types of evaporation devices.

The isolation layer forming unit 700 is connected to the evaporation unit 600 . In a preferred embodiment, as shown in FIG. 4 , the isolation layer forming unit 700 includes a flat plate plasma reaction device 400 . However, in different embodiments, the isolation layer forming unit 700 may also include other plasma reaction devices such as an inductively coupled galvanic reaction device. In addition, the plasma reaction device 400 used preferably has a fluorocarbon gas introduction device 410 . Fluorocarbon gas is introduced by the fluorocarbon gas introduction device 410 as the working gas to form the isolation layer 130 formed by plasma-induced polymerization of fluorocarbons on the evaporation source surface 111 of the shielding body 110, or/and on the contact surface 113 is formed with a substrate isolation layer 150 . It must be noted that the temperature of the reaction in the isolation layer forming unit 700 should not deform the shielding body 110 as a principle. In a preferred embodiment, the temperature during the reaction is controlled around room temperature.

As shown in FIG. 7 , the shield transfer device 800 is connected to the inside of the vapor deposition unit 600 and the isolation layer forming unit 700 , respectively. Before the shielding body 110 is sent into the evaporation unit 600 by the shielding transfer device 800 for the evaporation process, it needs to enter the isolation layer forming unit 700 for processing. After the shielding body 110 completes the reaction in the isolation layer forming unit 700 and forms the shielding device 100 including the isolation layer 130, the shield transfer device 800 transfers the shielding device 100 formed with the isolation layer 130 to the evaporation unit along the first transfer direction 810 600. In a preferred embodiment, after the evaporation process in the evaporation unit 600 is completed, the shielding transport device 800 reversely transports the used shielding device 100 out of the evaporation unit 600 along the second transport direction 820 for cleaning and removing attachments. The procedure of attaching objects. The cleaned shielding device 100 is sent to the isolation layer forming unit 700 to form the isolation layer 130 .

In the embodiment shown in FIG. 8 , the evaporation process equipment of the present invention further includes a transfer chamber 900 . The transfer chamber 900 communicates with the evaporation unit 600 and the isolation layer forming unit 700 , and accommodates the middle section of the shield transfer device 800 . With the configuration of the transmission chamber 900, the possibility of contamination of the shielding device 100 during the transmission process can be reduced.

In the embodiment shown in FIG. 9 , the evaporation process equipment of the present invention further includes a mask cleaning unit 750 . The shield cleaning unit 750 is preferably connected to the evaporation unit 600 and the isolation layer forming unit 700 through the shield transmission device 800 . After the evaporation process in the evaporation unit 600 is completed, the mask transfer device 800 transfers the used mask device 100 to the mask cleaning unit 750 for cleaning and removing attachments. The cleaned shielding device 100 is sent to the isolation layer forming unit 700 to form the isolation layer 130 and/or the substrate isolation layer 150 . The cleaning and detachment procedures mentioned above include dry and wet cleaning methods, as well as other cleaning methods with similar functions.

The present invention has been described by the above-mentioned related embodiments, however, the above-mentioned embodiments are only examples for implementing the present invention. It must be pointed out that the disclosed embodiments do not limit the scope of the present invention. On the contrary, modifications and equivalent arrangements included in the spirit and scope described in the claims are included in the scope of the present invention.

Claims (12)

1. a shielding unit supplies to be used with a substrate in an evaporation process, and this shielding unit comprises:

One shielding body comprises a vapor deposition source face; And

One sealing coat, this sealing coat are formed on this vapor deposition source face, wherein should shield body between this sealing coat and this substrate,

Wherein this sealing coat comprises a plasma body and brings out the high molecular polymerization layer.

2. shielding unit as claimed in claim 1, wherein this sealing coat comprises a fluorocarbon.

3. shielding unit as claimed in claim 1, wherein a contact angle of this sealing coat is the contact angle greater than this vapor deposition source face.

4. shielding unit as claimed in claim 1, wherein a surface tension of this sealing coat is the surface tension greater than this vapor deposition source face.

5. shielding unit as claimed in claim 1, wherein the thickness of this sealing coat is below 5 microns.

6. shielding unit as claimed in claim 5, wherein the thickness of this sealing coat is between 1 micron and 5 microns.

7. shielding unit as claimed in claim 5, wherein the thickness of this sealing coat is less than 10 nanometers.

8. shielding unit as claimed in claim 1, wherein this shielding body has a contact surface in tossing about of this vapor deposition source face, is formed with a substrate isolates layer on this contact surface, and wherein this substrate isolates layer is positioned between this contact surface and this substrate.

9. evaporation process equipment comprises:

One deposition unit;

One sealing coat forms the unit, is connected with this deposition unit; And

One shielding transmitting device, this shielding transmitting device is connected to this deposition unit respectively and this sealing coat forms unitary inside,

Wherein this sealing coat formation unit comprises first-class gas ions reaction unit.

10. evaporation process equipment as claimed in claim 9, wherein this shielding transmitting device comprises one first transmission direction and and one second reverse transmission direction of this first transmission direction.

11. evaporation process equipment as claimed in claim 9 also comprises a transfer chamber, this transfer chamber is communicated with this deposition unit and this sealing coat forms the unit, and holds a stage casing part of this shielding transmitting device.

12. evaporation process equipment as claimed in claim 9 also comprises a shielding cleaning unit, this shielding cleaning unit connects this sealing coat and forms the unit.

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