CN100498345C - Method for manufacturing probe card - Google Patents

Abstract

A method for manufacturing a probe card. A first passivation layer, a first patterned photoresist layer and a first metal layer are sequentially formed on a substrate. The first metal layer has a plurality of first through holes, exposing a portion of the first patterned photoresist layer. A second passivation layer and a second patterned photoresist layer are sequentially formed on the first metal layer and the first patterned photoresist layer. The second patterned photoresist layer has a plurality of second through holes, respectively exposing the first through holes. A plurality of needle bodies are formed in the first through holes and the second through holes, and a second metal layer is formed on the second patterned photoresist layer, and one end of the needle bodies is connected to the second metal layer. The needle bodies and the second metal layer are removed. A circuit carrier having a plurality of third through holes is provided, and the needle bodies are respectively inserted into the third through holes, and the second metal layer is patterned to form a plurality of tops.

Description

Manufacturing method of probe card

technical field

The present invention relates to a manufacturing method of a test module, and in particular to a manufacturing method of a probe card.

Background technique

Testing of integrated circuit chips (IC chips) is necessary at different stages of the semiconductor process. Each IC chip must be tested in wafer and package form to ensure its electrical function. With the strengthening and complexity of chip functions, the demand for high-speed and accurate testing becomes more important.

Testing individual wafers in wafer form is a process called wafer testing. Wafer probing is the establishment of temporary electrical contact between the wafer and automated test equipment. Wafer probing is an important test for IC design and function, in order to screen out good IC wafers before wafer separation and subsequent packaging.

This test method is to use the test machine and the probe card to form a test circuit, and connect the probe head (Probe Pin) on the probe card directly to the pad (Pad) or bump (Bump) on the chip Direct contact, and use the probe to detect each chip on the wafer, so as to lead out the chip signal, and send the chip signal data to the test machine for analysis and judgment, so that before entering the packaging step, the electrical properties can be filtered out in advance Chips with defective functions are used to avoid increasing packaging manufacturing costs due to the increase of defective products.

However, as the pitch of the pads or bumps gradually shrinks, the pitch of the probes must also shrink accordingly. In addition, as the pad or bump area shrinks, the diameter of the probe also shrinks. Therefore, the general manufacturing technology gradually faces a bottleneck.

Contents of the invention

In view of this, the purpose of the present invention is to provide a method for manufacturing a probe card to increase the accuracy of probe position and diameter.

In addition, another object of the present invention is to provide a method for manufacturing a probe card, so as to reduce the manufacturing cost of the probe card.

To achieve the above and other objectives, the present invention provides a method for manufacturing a probe card, which includes the following steps. First, a substrate is provided, and a first passivation layer is formed on the substrate. A first patterned photoresist layer is formed on the first passivation layer. A first metal layer is formed on the first passivation layer and the first patterned photoresist layer, wherein the first metal layer has a plurality of first through holes, which expose part of the first patterned photoresist layer, and each of the first metal layers The diameter of the through hole gradually increases from the lower surface of the first metal layer to the upper surface of the first metal layer. A second passivation layer is formed on the first metal layer and the first patterned photoresist layer. A second patterned photoresist layer is formed on the second passivation layer, wherein the second patterned photoresist layer has a plurality of second through holes exposing the first through holes respectively. A plurality of needles are formed in the second through holes and the first through holes, and a second metal layer is formed on the second patterned photoresist layer, and one end of the needles is connected with the second metal layer. Take out the needle body and the second metal layer. Then, a circuit carrier is provided, and the circuit carrier has a plurality of third through holes, and the pins are respectively inserted into the third through holes. The second metal layer is patterned to form a plurality of tops, and each top is connected to one of the pins.

In an embodiment of the present invention, the material of the first passivation layer may be chromium, titanium or stainless steel.

In an embodiment of the invention, the material of the second passivation layer may be chromium or titanium.

In an embodiment of the present invention, the step of removing the pins and the second metal layer includes separating the second passivation layer and the pins. Then, the second patterned photoresist layer is removed.

In an embodiment of the present invention, the substrate may be a silicon wafer, an optical glass substrate or stainless steel.

To achieve the above or other objectives, the present invention proposes another method for manufacturing a probe card, which includes the following steps. First, a substrate is provided, and a passivation layer is formed on the substrate. A first patterned photoresist layer is formed on the passivation layer. A first metal layer is formed on the passivation layer and the first patterned photoresist layer, wherein the first metal layer has a plurality of first through holes, which expose part of the first patterned photoresist layer, and each first through hole The diameter of the hole gradually increases from the lower surface of the first metal layer to the upper surface of the first metal layer. A passivation treatment is performed on the first metal layer and the first patterned photoresist layer. A second patterned photoresist layer is formed on the first metal layer, wherein the second patterned photoresist layer has a plurality of second through holes exposing the first through holes respectively. A plurality of needles are formed in the second through holes and the first through holes, and a second metal layer is formed on the second patterned photoresist layer, and one end of the needles is connected with the second metal layer. Take out the needle body and the second metal layer. Then, a circuit carrier is provided, and the circuit carrier has a plurality of third through holes, and the pins are respectively inserted into the third through holes. The second metal layer is patterned to form a plurality of tops, and each top is connected to one of the pins.

In an embodiment of the present invention, the passivation treatment may be soaking in a passivation solution.

In an embodiment of the invention, the material of the passivation layer may be chromium or titanium.

In an embodiment of the present invention, the step of removing the needle body and the second metal layer includes separating the first metal layer and the needle body. Then, the second patterned photoresist layer is removed.

In an embodiment of the present invention, the substrate may be a silicon wafer, an optical glass substrate or stainless steel.

Based on the above, the present invention uses the semiconductor manufacturing process to define the position and geometric size of the probes, and then takes advantage of the poor bonding force between the needle body and the second passivation layer to remove the probe array. Therefore, the accuracy of probe position and geometry can be increased.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

Description of drawings

1A to 1H are schematic diagrams of a method for manufacturing a probe card according to an embodiment of the present invention.

110: Substrate

120: first passivation layer

130: the first patterned photoresist layer

140: first metal layer

140a: lower surface

140b: upper surface

142: The first through hole

150: Second passivation layer

160: the second patterned photoresist layer

162: Second through hole

212: needle body

214: top

214a: second metal layer

220: Circuit carrier

220a: the third through hole

Detailed ways

1A to 1H are schematic diagrams of a method for manufacturing a probe card according to an embodiment of the present invention. Please refer to FIG. 1A first, the manufacturing method of the probe card in this embodiment includes the following steps. First, a substrate 110 is provided, and a first passivation layer 120 is formed on the substrate 110 . In addition, the method of forming the first passivation layer 120 is, for example, a metal deposition process. In addition, the material of the first passivation layer 120 can be chromium, titanium or stainless steel. However, the first passivation layer 120 may also be formed on the substrate 110 in advance. Furthermore, the substrate 110 is, for example, a silicon wafer, an optical glass substrate or stainless steel.

Please continue to refer to FIG. 1B , a first patterned photoresist layer 130 is formed on the first passivation layer 120 . In addition, the first patterned photoresist layer 130 is formed by, for example, coating a photoresist material layer on the first passivation layer 120 first. Next, an exposure process and a development process are performed on the photoresist material layer to form a first patterned photoresist layer 130 . In addition, the pattern position of the first patterned photoresist layer 130 is the same as the predetermined position for forming the probe, that is, the position of the point to be measured on the integrated circuit (integrated circuit, IC). The size of the pattern can be known by geometric techniques, which are described in detail below.

1C, an electroforming process is performed to form a first metal layer 140 on the first passivation layer 120 and the first patterned photoresist layer 130, and the first metal layer 140 has a plurality of first through holes 142 , wherein the first through hole 142 exposes part of the first patterned photoresist layer 130 . In addition, the material of the first metal layer 140 is nickel, for example. It should be noted that, in the electroforming process, when the thickness of the first metal layer 140 is greater than the thickness of the first patterned photoresist layer 130, the first metal layer 140 will expand laterally, that is, the first metal layer 140 will Gradually cover the surface of the first patterned photoresist layer 130 . Therefore, the diameter of the first through hole 142 gradually increases from the lower surface 140 a of the first metal layer 140 to the upper surface 140 b of the first metal layer 140 .

In more detail, if the thickness of the first patterned photoresist layer 130 is h, the diameter of the first through hole 142 is d, and the thickness of the first metal layer 140 is M, the diameter of the first patterned photoresist layer 130 is D can be expressed as:

D=d+2(M-h)

Referring to FIG. 1D , a second passivation layer 150 is formed on the first metal layer 140 and the first patterned photoresist layer 130 . In addition, the method of forming the second passivation layer 150 is, for example, a metal deposition process. In addition, the material of the second passivation layer 150 can be chromium or titanium. It is worth mentioning that, in another embodiment, if the second passivation layer 150 is not formed, passivation treatment may be performed on the structure formed by the above process. In addition, the passivation treatment is, for example, immersing the structure formed in the above process in a passivation solution, and the passivation solution is, for example, a phosphoric acid solution.

1E, a second patterned photoresist layer 160 is formed on the second passivation layer 150, wherein the second patterned photoresist layer 160 has a plurality of second through holes 162, which respectively expose the first through holes 142. In this embodiment, the thickness of the second patterned photoresist layer 160 is greater than 100 microns (micron). In addition, the formation of the second patterned photoresist layer 160 is similar to that of the first patterned photoresist layer 130 . It should be noted that if the passivation treatment is performed, the second patterned photoresist layer 160 will be directly formed on the first metal layer 140 .

1F, an electroforming process is performed to form a plurality of needles 212 in the second through holes 162 and the first through holes 142, and a second metal layer is formed on the second patterned photoresist layer 160. 214a, and one end of these pin bodies 212 is connected to the second metal layer 214a. At this time, the minimum diameter of the needle bodies 212 is the same as the minimum diameter of the first through hole 142 .

In more detail, when the electroforming process starts, the metal material is firstly formed in the second through holes 162 and the first through holes 142 to form the needle body 212 . Then, the electroforming process is continued to form the second metal layer 214 a covering the second patterned photoresist layer 160 . At this point, the electroforming process is roughly completed. Therefore, each needle body 212 is connected to the second metal layer 214a.

Referring to FIG. 1G, a demoulding process is performed to remove the needle body 212 and the second metal layer 214a. In more detail, since the bonding force between the needle body 212 and the second passivation layer 140 is weak, the second passivation layer 140 and the needle body 212 can be easily separated. As far as this embodiment is concerned, the material of the second passivation layer 140 may be chromium or titanium, so the method of separating the second passivation layer 140 from the needle body 212 may be knocking or peeling. Then, the second patterned photoresist layer 160 is removed.

It is worth mentioning that since the bonding force between the first metal layer 140 and the first passivation layer 120 is weak, the first metal layer 140 and the first passivation layer 120 can be easily separated. In other words, the substrate 110 and the first passivation layer 120 can be reused.

Referring to FIG. 111, a circuit carrier 220 is provided, and the circuit carrier 220 is, for example, a printed circuit board. In addition, the circuit carrier 220 has a plurality of third through holes 220a. Then, the pins 212 are respectively inserted into the third through holes 220a. At this time, the pins 212 and the second metal layer 214a are fixed by soldering, for example. on the circuit carrier 220

Then, the second metal layer 214 a is patterned to form a plurality of tops 214 , and each top 214 is connected to one of the pins 212 . In other words, after the patterning process, the needle bodies 212 are also electrically insulated. In addition, the method of patterning the second metal layer 214a is, for example, laser cutting. So far, the production of the probe card is roughly completed.

Since the geometric dimensions of these needle bodies 212 can be determined by the thickness h of the first patterned photoresist layer 130 , the diameter D of the first patterned photoresist layer 130 , the thickness M of the first metal layer 140 and the thickness of the second through hole 162 Therefore, the position and diameter of the needle body 212 of the probe card manufactured by the present invention have greater accuracy.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, may use the technical content disclosed above to make some changes or modify them into equivalent embodiments with equivalent changes, but as long as they do not depart from the technical solution of the present invention, the Technical Essence Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.

Claims (10)

1, a kind of manufacture method of probe is characterized in that it may further comprise the steps:

One substrate is provided, and on this substrate, forms one first passivation layer;

On this first passivation layer, form one first patterning photoresist layer;

On this first passivation layer and this first patterning photoresist layer, form a first metal layer, wherein this first metal layer has most first perforations, expose this first patterning photoresist layer of part, and respectively the aperture of this first perforation increases gradually from the upper surface of past this first metal layer of lower surface of this first metal layer;

On this first metal layer and this first patterning photoresist layer, form one second passivation layer;

Form one second patterning photoresist layer on this second passivation layer, wherein this second patterning photoresist layer has most second perforations, exposes described first perforation respectively;

In described second perforation and described first perforation, form most needle bodies, and on this second patterning photoresist layer, form one second metal level, and an end of described needle body is connected with this second metal level;

Take out described needle body and this second metal level;

Provide a line carrier plate, and this line carrier plate has most the 3rd perforations, and described needle body is inserted respectively in described the 3rd perforation; And

This second metal level of patterning, forming most tops, and respectively this top and described needle body one of them link to each other.

2, the manufacture method of probe according to claim 1, the material that it is characterized in that wherein said first passivation layer is chromium, titanium or stainless steel.

3, the manufacture method of probe according to claim 1, the material that it is characterized in that wherein said second passivation layer is chromium or titanium.

4, the manufacture method of probe according to claim 1 is characterized in that the step of the described needle body of wherein said taking-up and this second metal level comprises:

Separate this second passivation layer and described needle body; And

Remove this second patterning photoresist layer.

5, the manufacture method of probe according to claim 1 is characterized in that wherein said substrate is Silicon Wafer, optical glass substrate or stainless steel.

6, a kind of manufacture method of probe is characterized in that it may further comprise the steps:

One substrate is provided, and on this substrate, forms a passivation layer;

On this passivation layer, form one first patterning photoresist layer;

On this passivation layer and this first patterning photoresist layer, form a first metal layer, wherein this first metal layer has most first perforations, expose this first patterning photoresist layer of part, and respectively the aperture of this first perforation increases gradually from the upper surface of past this first metal layer of lower surface of this first metal layer;

Carry out a Passivation Treatment for this first metal layer and this first patterning photoresist layer;

Form one second patterning photoresist layer on this first metal layer, wherein this second patterning photoresist layer has most second perforations, exposes described first perforation respectively;

In described second perforation and described first perforation, form most needle bodies, and on this second patterning photoresist layer, form one second metal level, and an end of described needle body is connected with this second metal level;

Take out described needle body and this second metal level;

Provide a line carrier plate, and this line carrier plate has most the 3rd perforations, and described needle body is inserted respectively in described the 3rd perforation; And

This second metal level of patterning, forming most tops, and respectively this top and described needle body one of them link to each other.

7, the manufacture method of probe according to claim 6 is characterized in that wherein said Passivation Treatment is for soaking passivating solution.

8, the manufacture method of probe according to claim 6, the material that it is characterized in that wherein said passivation layer is chromium or titanium.

9, the manufacture method of probe according to claim 6 is characterized in that the step of the described needle body of wherein said taking-up and this second metal level comprises:

Separate this first metal layer and described needle body; And

Remove this second patterning photoresist layer.

10, the manufacture method of probe according to claim 6 is characterized in that wherein said substrate is Silicon Wafer, optical glass substrate or stainless steel.

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