CN100514694C - Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction - Google Patents
Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction Download PDFInfo
- Publication number
- CN100514694C CN100514694C CNB2006100727952A CN200610072795A CN100514694C CN 100514694 C CN100514694 C CN 100514694C CN B2006100727952 A CNB2006100727952 A CN B2006100727952A CN 200610072795 A CN200610072795 A CN 200610072795A CN 100514694 C CN100514694 C CN 100514694C
- Authority
- CN
- China
- Prior art keywords
- magnetic
- layer
- tunnel
- dual
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005291 magnetic effect Effects 0.000 title claims abstract description 136
- 230000009977 dual effect Effects 0.000 title 1
- 230000005415 magnetization Effects 0.000 claims abstract description 33
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 230000000694 effects Effects 0.000 claims abstract description 7
- 230000005290 antiferromagnetic effect Effects 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 13
- 239000000696 magnetic material Substances 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims description 10
- 230000005294 ferromagnetic effect Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 8
- 230000005641 tunneling Effects 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 5
- 229910019026 PtCr Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 3
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 3
- 150000002910 rare earth metals Chemical class 0.000 claims description 3
- 229910020598 Co Fe Inorganic materials 0.000 claims description 2
- 229910002519 Co-Fe Inorganic materials 0.000 claims description 2
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 2
- 229910002182 La0.7Sr0.3MnO3 Inorganic materials 0.000 claims description 2
- 229910017028 MnSi Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910003271 Ni-Fe Inorganic materials 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 2
- 229910002065 alloy metal Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000006870 function Effects 0.000 description 39
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- MJBWDEQAUQTVKK-IAGOWNOFSA-N aflatoxin M1 Chemical compound C=1([C@]2(O)C=CO[C@@H]2OC=1C=C(C1=2)OC)C=2OC(=O)C2=C1CCC2=O MJBWDEQAUQTVKK-IAGOWNOFSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910003321 CoFe Inorganic materials 0.000 description 4
- 239000002885 antiferromagnetic material Substances 0.000 description 4
- 229910019236 CoFeB Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 208000012978 nondisjunction Diseases 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 229910019230 CoFeSiB Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- -1 Gd-Y Inorganic materials 0.000 description 1
- 229910019041 PtMn Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000006247 magnetic powder Substances 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
Images
Landscapes
- Hall/Mr Elements (AREA)
Abstract
本发明涉及一种基于双势垒磁性隧道结的逻辑元件，该逻辑元件包括四条输入信号线、一条输出信号线和隧道结单元；每条输入线中流过的电流强度均相同，分别将“0”和“1”分配给它们，利用输入信号A、B、C、D的组合，决定隧道结中磁性层的磁化方向，将通过双势垒磁性隧道结的磁电阻效应的大小作为输出信号；其特征在于所述的隧道结单元是双势垒磁性隧道结单元，包括：下部磁性层、第一隧道势垒层、中间磁性层、第二隧道势垒层和上部磁性层。本发明还涉及一种将上述任意多个磁逻辑元件按照阵列排列，并使逻辑输入信号或读出电流流过磁逻辑元件的磁逻辑元件阵列。本发明的优点在于使逻辑电路小型化及高密度集成化，利于工业化。
The invention relates to a logic element based on a double-barrier magnetic tunnel junction. The logic element includes four input signal lines, one output signal line and a tunnel junction unit; the current intensity flowing in each input line is the same, and the "0 " and "1" are assigned to them, and the combination of input signals A, B, C, and D is used to determine the magnetization direction of the magnetic layer in the tunnel junction, and the magnitude of the magnetoresistance effect passing through the double barrier magnetic tunnel junction is used as the output signal; It is characterized in that the tunnel junction unit is a double barrier magnetic tunnel junction unit, comprising: a lower magnetic layer, a first tunnel barrier layer, a middle magnetic layer, a second tunnel barrier layer and an upper magnetic layer. The present invention also relates to a magnetic logic element array in which any plurality of magnetic logic elements are arranged in an array, and logic input signals or readout currents flow through the magnetic logic elements. The invention has the advantages of miniaturization and high-density integration of logic circuits, which is beneficial to industrialization.
Description
Technical field
The invention belongs to magnetic logic field, specifically relate to a kind of digital storage technique of utilizing MRAM storage, the logic element that provides for logic device and logical circuit based on dual-potential magnetic tunnel, and array the magnetic logic elements array.
Background technology
Mainly depend on the electric charge of electronics at present based on transistorized integrated circuit, evaluation work.But since eighties 21 century, giant magnetoresistance effect was found, spintronics caused people's extensive concern, and people want to control electronic spin and design and make new device.Some research groups begin to explore the brand-new processor of a class, and they propose, and magnetic mnemon also can design and be used for calculating.Selection by logical operation and carry out this two steps, these devices both can become programmable logic device, also can become the memory storage of common transient state electronics output.
People such as Cowbum have proposed a kind of new equipment structure by the nano-magnetic powder structure, available its execution magnetic logic function (Cowbum and Welland, " science " the 287th volume 1466-1468 page or leaf).The William C.Black of the state university in Iowa in 2000, Jr. and B.Das propose a kind of magnetic logic based on magneto resistance effect, and after 2 years, research company of Siemens demonstrates a kind of reconfigurable magnetic logic gate component by experiment.And then, Berlin Paul Drude research institute has proposed a kind of simpler method and has realized the switching [A.Ney, C.Pampuch, R.Koch and K.H.Pioog, " nature " 425th volume 485-487 page or leaf] of various computing elements between the Different Logic state.Its design as shown in Figure 1, the magnetic gate contains three incoming lines, i.e. its intensity of electric current that flows through among incoming line A, B, the C, every incoming line is all identical.Though in this magnetoresistive element, have only two kinds of output numerical value (0 and 1), four kinds of different initial conditions are arranged, wherein two kinds is parastate, two kinds is antiparallel state, so just can configure different logic states.A single magnetic logic elements like this can be represented following basic logic function, as AND-function (AND), OR-function (OR), NAND function (NAND) and nondisjunction function (NOR).Can construct any known logical construction by suitable combination.
Yet, need two such logical blocks at least such as logic functions such as AND-OR INVERTER or inclusive ORs if form one.Existing magnetic logic does not also solve the problem of minification, does not solve the problem how a plurality of elements constitute yet, so for the miniaturization that needs the magnetic logical circuit in the practical application from now on, integrated certain limitation arranged.
Summary of the invention
The objective of the invention is to overcome existing magnetic logic and be unfavorable for miniaturization and integrated defective, thereby a kind of small-sized, that have a plurality of logic functions, logic element based on dual-potential magnetic tunnel that can carry out logical process is provided.
Another object of the present invention provide a kind of with above-mentioned array of logic elements change based on dual-potential magnetic tunnel the magnetic logic elements array.
The objective of the invention is to realize by the following technical solutions:
The invention provides a kind of logic element based on dual-potential magnetic tunnel, as shown in Figure 2, this logic element comprises four input signal cables (A, B, C and D), output signal line and tunneling junction cell; The current strength that flows through in every input signal cable is all identical, respectively " 0 " and " 1 " is distributed to them, utilize the combination of input signal cable A, B, C, D, the magnetospheric direction of magnetization in the decision tunnel junction, the size of magneto-resistance effect that will be by dual-potential magnetic tunnel is as output signal; It is characterized in that:
Described tunneling junction cell is the dual-potential magnetic tunnel unit, and as shown in Figure 3, it comprises:
A lower magnetic layer FM1;
A first tunnel barrier layer I1 who is formed on the described lower magnetic layer;
An intermediate magnetic layer FM2 who is formed on described first tunnel barrier layer;
A second tunnel barrier layer I2 who is formed on the described intermediate magnetic layer;
A upper magnetic layer FM3 who is formed on second tunnel barrier layer;
The composition material of described three magnetospheres (lower magnetic layer FM1, intermediate magnetic layer FM2 and upper magnetic layer FM3) is ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2～10nm; Wherein, the coercive force of lower magnetic layer FM1 and FM3 can be the same or different, and the direction of magnetization of intermediate magnetic layer FM2 is freely, and it is made of the less soft magnetic material of coercive force;
Above-mentioned ferrimagnet comprises: 3d transition group magnetic metals such as Fe, Co, Ni, ferromagnetic alloies such as Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, Gd-Y, rare earth metal and ferrimags thereof such as Pr, Nd, Sm, Gd, Tb, Dy, Ho, Er;
Above-mentioned semimetal magnetic material comprises: Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Co
2Heussler alloys such as MnSi;
Above-mentioned magnetic semiconductor material comprises: Fe, Co, Ni or V; Perhaps ZnO, the TiO that mixes for Mn
2, HfO
2Or SnO
2, perhaps GaAs, InAs, GaN or the ZnTe that mixes for Mn;
The composition material of described tunnel barrier layer I1 and I2 is MgO, Al
2O
3, AlN, Ta
2O
5Or HfO
2Deng, its thickness is 0.8～3.0nm.
Above-mentioned tunneling junction cell as shown in Figure 4, can also be:
Under described lower magnetic layer FM1, also comprise the first antiferromagnetic layer AFM1;
On described upper magnetic layer FM3, also comprise the second antiferromagnetic layer AFM2;
The composition material of described antiferromagnetic layer (AFM1 and AFM2) comprise make by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn or antiferromagnetic materials such as CoO, NiO, PtCr, its thickness is 7～20nm.
Above-mentioned tunneling junction cell as shown in Figure 5, can also be:
Under described lower magnetic layer FM1, also comprise Ru layer, the 3rd magnetosphere FM11 and the first antiferromagnetic layer AFM1 successively;
On described upper magnetic layer FM3, also comprise Ru layer, the 4th magnetosphere FM31 and the second antiferromagnetic layer AFM2 successively;
The composition material of described antiferromagnetic layer (AFM1 and AFM2) comprise make by the alloy material of Ir, Fe, Rh, Pt or Pd and Mn or antiferromagnetic materials such as CoO, NiO, PtCr, its thickness is 7～20nm;
The composition material of described the 3rd magnetosphere FM11 and the 4th magnetosphere FM31 is ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2～10nm;
The thickness of described Ru layer is 0.7～0.9nm.
In above-mentioned logic element provided by the invention based on dual-potential magnetic tunnel, magnetoresistive element has two kinds of numerical value outputs (0, with 1), but multiple different initial condition is arranged, two kinds of parallel state wherein, two kinds of antiparallel state and several intermediatenesses completely can configure multiple different logic state like this.At first, allow electric current flow through two, three or four incoming lines, thereby the polarity of logic element is set at a certain in the above-mentioned various states.Second step then was to carry out this logical operation by only activating top two incoming lines (being A and B) or three incoming lines (A, B and C) or four incoming lines (A, B, C and D).Have only when two, three or four incoming lines to have produced the identical magnetic field of polarity during by electric current, a kind of selected initial condition just can be reversed, and makes output valve from " 1 " change " 0 ", thereby obtains multiple logic state.
The invention provides a kind of with above-mentioned array of logic elements change based on dual-potential magnetic tunnel the magnetic logic elements array, be with above-mentioned any a plurality of magnetic logic elements according to arrayed, and make logic input signal or read current flow through magnetic logic elements.Its working mode figure and magnetic logic elements array schematic diagram are respectively as shown in Figure 6 and Figure 7.
Provided by the inventionly be: only use a single magnetic logic elements can represent the basic logic function of prior art, as AND-function (AND), OR-function (OR), NAND function (NAND) and nondisjunction function (NOR) based on the logic element of dual-potential magnetic tunnel and the advantage of magnetic logic elements array; In addition, can also express distance function (XOR) etc., and can provide appropriate combination or any other known logical function of the OR function that has suitable interconnection, AND function, NOT function, any above-mentioned function, thereby make logical circuit miniaturization and high density integrated, its industrialized advantage is extremely many.
Description of drawings
Fig. 1 is the working mode figure of the magnetic logic elements of prior art;
Fig. 2 is the working mode figure of the magnetic logic elements based on bibarrier tunnel junction of the present invention;
Fig. 3 is first kind of magnetic logic elements core texture schematic diagram based on bibarrier tunnel junction of the present invention;
Fig. 4 is second kind of magnetic logic elements core texture schematic diagram based on bibarrier tunnel junction of the present invention;
Fig. 5 is the third magnetic logic elements core texture schematic diagram based on bibarrier tunnel junction of the present invention;
Fig. 6 is the working mode figure that is used for the magnetic logic elements array of the present invention;
Fig. 7 is a kind of magnetic logic elements array schematic diagram of the present invention.
Embodiment
As shown in Figure 3, first kind of magnetic logic elements core texture based on dual-potential magnetic tunnel provided by the invention comprises following five layers: three layers of ferromagnetic layer FM1, FM2 and FM3, and at three layers of ferromagnetic layer therebetween, two tunnel barrier layer I1 and I2.Magnetosphere FM1 and FM3 are made of bigger " hard magnetic layer " CoFe of coercive force, and its thickness is 3nm, and magnetosphere FM2 constitutes 10nm by less " soft ferromagnetic layer " NiFe of coercive force; Tunnel barrier layer is then by the Al of 1.0nm
2O
3Constitute.
Because magnetosphere FM1 and FM3 material constitute and be of uniform thickness, therefore, two-layer like this upset field is the same, the magnetized state of the bibarrier tunnel junction of this moment and unipotential tunnel junction barrier similar.In this scheme, incoming line A, B, C are arranged on the magnetosphere FM1, and the incoming line D knot that passes through tunnel is distributed to them with " 0 " and " 1 " respectively, and the current strength that flows through in every incoming line is all identical.If have only incoming line A that input current is arranged, the magnetization of its each layer does not all change; When incoming line A and B had the electric current input simultaneously, the direction of magnetization of soft ferromagnetic layer FM2 can be overturn; When incoming line A, B and C had the electric current input simultaneously, the direction of magnetization of magnetosphere FM1 and FM3 can be overturn.Utilize the combination of above-mentioned input signal A, B, C, D, configure multiple different logic state, promptly multiple logical function.
Two kinds of the most basic once logical functions at first are described---AND-function (AND) and NOT function (OR), it has two inputs and an output.When if two inputs are " 1 ", then output " 1 ".Here it is AND function.When all input signals are input as " 0 " except that two, all output " 1 ", Here it is OR function.
For the AND function, the first step, logic is set: all be applied with negative current for incoming line (A, B and C), make the direction of magnetization of magnetosphere FM1, FM2 and FM3 all point to left; Second step, carry out logic function, have only when forward current (promptly producing the electric current in a forward magnetic field) is applied on incoming line A and the B simultaneously, could switch to the direction of magnetization of intermediate magnetic layer FM2 right-hand from pointing to left.The OR function is by similar operation, but when beginning, the direction of magnetization of magnetosphere FM1 and FM3 is pointed to a left side, and the direction of magnetization of intermediate magnetic layer FM2 is then pointed to right-hand.The direction of magnetization of switching FM1 and FM3 layer can realize two kinds of basic logical functions in addition, i.e. NOTAND (NAND is with non-) or NOT OR (NOR, or non-).All three incoming lines (A, B and C) all have electric current that the direction of magnetization of FM1 and FM3 layer is switched.Switch the required magnetic field of the direction of magnetization of intermediate magnetic layer less than the required magnetic field of the direction of magnetization of switching FM1 and FM3 layer, therefore, intermediate layer and bilevel polarity can be switched independently of each other.
For the XOR function, we design an incoming line D (functional line) and pass through dual-potential magnetic tunnel, electric current is arranged through out-of-date in incoming line D, because the thermal effect effect reduces the coercive force of magnetosphere FM1 and FM3, thereby there are being incoming line A, B to do the also upset thereupon of the direction of magnetization of time spent magnetosphere FM1 and FM3 simultaneously.The first step, incoming line D applies electric current, and simultaneously, incoming line A, B pass to negative current, and promptly all to " 0 " signal, at this moment, the direction of magnetization of magnetosphere FM1, FM2 and FM3 is all left; And then give incoming line A and B with " 1 " signal, the obstructed electric current of incoming line D, at this moment, the direction of magnetization of free layer FM2 to the right, the initial condition of Here it is xor logic.Its logical process is as follows: at first, apply current signal for incoming line D, when the signal of incoming line A and B is-I (0), be output as low resistance state, be " 1 "; When the signal of incoming line A and B had only one-I (0), be output as high-impedance state this moment, is " 1 "; When incoming line A and B signal " 1 ", be output as low resistance state, be " 0 ".More than the logic true value table of five kinds of functions see Table 1.
By suitable combination, can construct any known known logic.
The input form and the output signal table of functions such as table 1, AND, NAND, OR, NOR, XOR
As shown in Figure 4, second kind of magnetic logic elements core texture based on dual-potential magnetic tunnel provided by the invention comprises following five layers: three layers of ferromagnetic layer FM1, FM2 and FM3, and at three layers of ferromagnetic layer therebetween, two tunnel barrier layer I1 and I2.Magnetosphere FM1, FM2 and FM3 are made of the 4nm CoFeSiB soft magnetic material that has than high spinning polarizability.Wherein FM1 and FM3 be by the antiferromagnetic materials IrMn pinning of 12nm, makes the direction of magnetization relative fixed that this is two-layer, and the direction of magnetization of FM2 is then overturn at less magnetic field energy, is free layer.Tunnel barrier I1 and I2 are that the AlN of 0.8nm constitutes by thickness then.
Operator scheme based on the magnetic logic elements of this structure is similar to embodiment 1.
As shown in Figure 5, the third magnetic logic elements core texture based on dual-potential magnetic tunnel provided by the invention comprises: a bottom inverse ferric magnetosphere AFM1; A lower magnetic layer of forming by the artificial antiferromagnetic coupling structure of FM11/Ru/FM1; A upper magnetic layer of forming by the artificial antiferromagnetic coupling structure of FM3/Ru/FM31; And at three layers of ferromagnetic layer (FM1, FM2, FM3) therebetween, two tunnel barrier layer I1 and I2; A top inverse ferric magnetosphere AFM2.FM1, FM2 and FM3 are made of the 4nm CoFeB soft magnetic material that has than high spinning polarizability, and FM11 and FM31 are made of 2nm CoFe material, and the thickness of Ru is 0.8nm.In it and FM1 and FM3 by antiferromagnetic materials PtMn and CoFe (2nm)/Ru (0.8nm)/artificial antiferromagnetic pinning of CoFeB (4nm), the direction of magnetization relative fixed that this is two-layer, the direction of magnetization of FM2 is then overturn at less magnetic field energy, is free layer.Tunnel barrier I1 and I2 then are MgO (001) formation of 2.0nm by thickness.
Operator scheme based on the magnetic logic elements of this structure is similar to embodiment 1.
Embodiment 4
In the above-described embodiments, we design magnetosphere FM1 and are made of identical magnetic material with FM3, and its thickness is also identical, and the purpose of doing like this is to make FM1 the same with the upset of the direction of magnetization of FM3 layer.We also can be designed as FM1 and are made of different coercitive magnetic materials with FM3 equally, and perhaps its thickness is inequality.The strong stupid power size of magnetic FM1 and FM3 is relevant with material and thickness thereof.
As shown in Figure 3, the magnetic logic elements core texture of present embodiment is as follows: a lower magnetic layer FM1 who is made of 4nm Co; One be formed on the described lower magnetic layer by 0.8nm Al
2O
3First tunnel barrier layer that constitutes; An intermediate magnetic layer FM2 who constitutes by 10nm CoFeB material who is formed on described first tunnel barrier layer; A second tunnel barrier layer I2 who is formed on the described intermediate magnetic layer is by Ta
2O
5Material constitutes, and its thickness is 1.5nm; A upper magnetic layer FM3 who constitutes by 4nm CoFe who is formed on second tunnel barrier layer.In this structure, required magnetic field (H) size order of each magnetosphere upset is: H (FM1)〉H (FM3)〉H (FM2), because the upset field of each layer is in different size, the magnetized state combination of each layer can have 8 kinds of different compound modes, sees Table 2.Thereby expect that a single magnetic logical block can be built into more logical function, realizes more logic function.
The input form of table 2, embodiment 4 and output signal table
In this scheme, for the logical function of two inputs, the direction of magnetization that we can set FM1 is fixed on a certain direction, and for example in logic, its direction of magnetization is pointed to left all the time.Have five kinds of logic functions (AND, NAND, OR, NOR and XOR) this moment, and its principle is omitted its detailed process with embodiment 1 at this.
If the magnetospheric direction of magnetization of FM1, FM2 and FM3 all can be controlled by input signal, each state in the table 2 can be represented the combination of several basic logic functions, to improve its integrated level greatly if construct integrated circuit, this miniaturization that helps following integrated circuit, integrated with this magnetic logic elements.Discuss for the 4th kind with table 2 below.
The first step imposes on incoming line A, B, C and D simultaneously to signal " 0 ", makes the direction of magnetization of FM1, FM2 and FM3 all point to a left side, and then applies signal " 1 " for incoming line A and B, and the direction of magnetization of middle free layer FM2 is pointed to right.Suppose to have three input A, B and C, its corresponding truth table sees Table 3, and corresponding logical expression is:
The function of such magnetic logic will just can be finished with a plurality of single common unipotentials base magnetic logic elements, and as seen its integrated level has improved greatly.
The input form of table 3 embodiment 4 and output signal table
Equally, switch the direction of magnetization of other layers, can obtain other logical function, the logic function of each logical function is several common logical function functions quite, and concrete does not give unnecessary details one by one at this.
Embodiment 5
Present embodiment is intended to illustrate a kind of magnetic logic elements array.As shown in Figure 6, the core texture of this kind magnetic logic elements is as above-mentioned example.Difference be incoming line A, C and and incoming line B be an angle of 90 degrees and arrange, when forward current was applied to incoming line A and B simultaneously and goes up, promptly two incoming lines produced a resultant magnetic field and could switch to other direction to the direction of magnetization of intermediate magnetic layer from a direction.All three incoming lines (A, B and C) all have electric current that the direction of magnetization of FM1 and FM3 layer is switched.Switch the required magnetic field of the direction of magnetization of intermediate magnetic layer less than the required magnetic field of the direction of magnetization of switching FM1 and FM3 layer, therefore, intermediate layer and bilevel polarity can be switched independently of each other.The logic function of present embodiment is consistent with embodiment 1, is not described in detail in this.
Fig. 7 has provided the magnetic logic elements array schematic diagram based on this design, and its similar is in the principle of MRAM device (MRAM).
Claims (9)
1, a kind of logic element based on dual-potential magnetic tunnel, this logic element comprise four input signal cables, output signal line and tunneling junction cell; The current strength that flows through in every input signal cable is all identical, respectively " 0 " and " 1 " is distributed to them, utilize the combination of input signal A, B, C, D, the magnetospheric direction of magnetization in the decision tunnel junction, the size of magneto-resistance effect that will be by dual-potential magnetic tunnel is as output signal, it is characterized in that: described tunneling junction cell is the dual-potential magnetic tunnel unit, and it comprises:
A lower magnetic layer;
First tunnel barrier layer that is formed on the described lower magnetic layer;
An intermediate magnetic layer that is formed on described first tunnel barrier layer;
Second tunnel barrier layer that is formed on the described intermediate magnetic layer;
A upper magnetic layer that is formed on second tunnel barrier layer;
Described three magnetospheric composition materials are ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2～10nm;
The composition material of described tunnel barrier layer is for being selected from MgO, Al
2O
3, AlN, Ta
2O
5Or HfO
2, its thickness is 0.8～3.0nm.
2, the logic element based on dual-potential magnetic tunnel as claimed in claim 1 is characterized in that:
Described ferrimagnet is 3d transition group magnetic metal, ferromagnetic alloy or rare earth metal;
Described semimetal magnetic material is Fe
3O
4, CrO
2, La
0.7Sr
0.3MnO
3Or Co
2MnSi;
Described magnetic semiconductor material is Fe, Co, Ni or V;
Described magnetic semiconductor material or the ZnO, the TiO that mix for Mn
2, HfO
2Or SnO
2
Described magnetic semiconductor material or GaAs, the InAs, GaN or the ZnT that mix for Mn.
3, the logic element based on dual-potential magnetic tunnel as claimed in claim 2 is characterized in that: described ferromagnetic alloy is the rare earth metal ferrimag.
4, the logic element based on dual-potential magnetic tunnel as claimed in claim 2 is characterized in that:
Described ferrimagnet is Fe, Co, Ni, Co-Fe, Co-Fe-B, Ni-Fe, Co-Fe-Ni, Gd-Y, Pr, Nd, Sm, Gd, Tb, Dy, Ho or Er.
5, as claim 1,2 or 4 described logic elements, it is characterized in that based on dual-potential magnetic tunnel: described tunneling junction cell, also comprise,
First antiferromagnetic layer under described lower magnetic layer;
Second antiferromagnetic layer on described upper magnetic layer;
The thickness of described first antiferromagnetic layer and second antiferromagnetic layer is 7～20nm.
6, the logic element based on dual-potential magnetic tunnel as claimed in claim 5 is characterized in that: the composition material of described first antiferromagnetic layer and second antiferromagnetic layer is alloy material, CoO, NiO or the PtCr of Ir, Fe, Rh, Pt or Pd and Mn.
7, as claim 1,2 or 4 described logic elements, it is characterized in that based on dual-potential magnetic tunnel: described tunneling junction cell, also comprise,
Under described lower magnetic layer, also comprise Ru layer, the 3rd magnetosphere and first antiferromagnetic layer successively;
On described upper magnetic layer, also comprise Ru layer, the 4th magnetosphere and second antiferromagnetic layer successively;
The thickness of described first antiferromagnetic layer and second antiferromagnetic layer is 7～20nm;
Described the 3rd magnetosphere and the 4th magnetospheric composition material are ferrimagnet, semimetal magnetic material or magnetic semiconductor material, and each magnetospheric thickness is 2～10nm;
The thickness of described Ru layer is 0.7～0.9nm.
8, the logic element based on dual-potential magnetic tunnel as claimed in claim 7 is characterized in that: the composition material of described first antiferromagnetic layer and second antiferromagnetic layer is alloy material, CoO, NiO or the PtCr of Ir, Fe, Rh, Pt or Pd and Mn.
9, a kind of array of logic elements change based on dual-potential magnetic tunnel the magnetic logic elements array, be with the described logic element based on dual-potential magnetic tunnel of one of any a plurality of claims 1 to 8 according to arrayed, and make logic input signal or read current flow through magnetic logic elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100727952A CN100514694C (en) | 2006-04-11 | 2006-04-11 | Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006100727952A CN100514694C (en) | 2006-04-11 | 2006-04-11 | Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101055915A CN101055915A (en) | 2007-10-17 |
| CN100514694C true CN100514694C (en) | 2009-07-15 |
Family
ID=38795630
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2006100727952A Active CN100514694C (en) | 2006-04-11 | 2006-04-11 | Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100514694C (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5526707B2 (en) * | 2009-10-27 | 2014-06-18 | ソニー株式会社 | Driving method of information storage element |
| JP6177986B2 (en) | 2013-03-15 | 2017-08-09 | インテル・コーポレーション | Logic chip with embedded magnetic tunnel junction |
| US9847475B2 (en) * | 2014-03-25 | 2017-12-19 | Intel Corporation | Magnetic domain wall logic devices and interconnect |
| CN104575934A (en) * | 2015-02-02 | 2015-04-29 | 于广华 | Magnetoresistance thin-film material, preparation method, magnetic sensor and element |
| US11107615B2 (en) * | 2017-02-24 | 2021-08-31 | Tdk Corporation | Magnetization rotational element, magnetoresistance effect element, and memory device |
| WO2021016837A1 (en) * | 2019-07-30 | 2021-02-04 | 北京航空航天大学 | Magnetic tunnel junction, manufacturing method, spin diode, and memory |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1601610A (en) * | 2004-10-10 | 2005-03-30 | 中国科学院物理研究所 | Double Barrier Tunnel Junction Sensor with Resonant Tunneling Effect |
| US20050110004A1 (en) * | 2003-11-24 | 2005-05-26 | International Business Machines Corporation | Magnetic tunnel junction with improved tunneling magneto-resistance |
| US20050219895A1 (en) * | 2004-04-06 | 2005-10-06 | Headway Technologies, Inc. | Magnetic random access memory array with free layer locking mechanism |
-
2006
- 2006-04-11 CN CNB2006100727952A patent/CN100514694C/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050110004A1 (en) * | 2003-11-24 | 2005-05-26 | International Business Machines Corporation | Magnetic tunnel junction with improved tunneling magneto-resistance |
| US20050219895A1 (en) * | 2004-04-06 | 2005-10-06 | Headway Technologies, Inc. | Magnetic random access memory array with free layer locking mechanism |
| CN1601610A (en) * | 2004-10-10 | 2005-03-30 | 中国科学院物理研究所 | Double Barrier Tunnel Junction Sensor with Resonant Tunneling Effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101055915A (en) | 2007-10-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100477316C (en) | Magnetic Logic Element Based on Ring Closed Magnetic Multilayer Film | |
| CN1606093B (en) | Non-volatile memory cell using torque and random access magnetic memory using same | |
| Fert et al. | Spintronics, from giant magnetoresistance to magnetic skyrmions and topological insulators | |
| EP2201570B1 (en) | Magnetic element having reduced current density | |
| Wolf et al. | The promise of nanomagnetics and spintronics for future logic and universal memory | |
| US7829964B2 (en) | Magnetic memory element utilizing spin transfer switching | |
| CN101465407B (en) | Heat Assisted Magnetic Write Memory | |
| JP5593122B2 (en) | Spin torque magnetoresistive structure | |
| US9300301B2 (en) | Nonvolatile magnetic logic device | |
| US20190035446A1 (en) | Exchange bias utilization type magnetization rotational element, exchange bias utilization type magnetoresistance effect element, exchange bias utilization type magnetic memory, non-volatile logic circuit, and magnetic neuron element | |
| CN102216995B (en) | Flux-closed stram with electronically reflective insulative spacer | |
| US10483459B2 (en) | Magnetic memory | |
| US8476925B2 (en) | Magnetic switching cells and methods of making and operating same | |
| JP4027041B2 (en) | Memory cell device and manufacturing method thereof | |
| CN102074329B (en) | Magnetic multilayer film as well as magnetic logic element and magnetic random access memory thereof | |
| CN100514694C (en) | Logic part and magnetic logic part array based on the dual potential base magnetic tunnel junction | |
| CN108987031B (en) | A magnetic tunnel junction device and its magnetic random access memory device | |
| CN101194320A (en) | Fast magnetic memory device using spin transfer and magnetic element used therein | |
| CN109690675A (en) | A kind of novel word line pulse wiring method can be applied to magnetotunneling knot | |
| CN117202760A (en) | Magnetic tunnel junction memory cell based on magnetic Sjog seed and operation method thereof | |
| CN105895799A (en) | Programmable spin logic device and electronic device including same | |
| CN213816191U (en) | Tunnel magnetoresistance and tunnel magnetic device | |
| CN114641867B (en) | A spin logic device and a spin logic circuit | |
| JP2005174969A (en) | Magnetic random access memory cell using magnetostatic coupling | |
| JP2005174969A5 (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |