CN100518423C - Phosphorescent organic light emitting device and display apparatus including the same - Google Patents
Phosphorescent organic light emitting device and display apparatus including the same Download PDFInfo
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- CN100518423C CN100518423C CNB2005101268259A CN200510126825A CN100518423C CN 100518423 C CN100518423 C CN 100518423C CN B2005101268259 A CNB2005101268259 A CN B2005101268259A CN 200510126825 A CN200510126825 A CN 200510126825A CN 100518423 C CN100518423 C CN 100518423C
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- 239000000463 material Substances 0.000 claims abstract description 58
- 239000002019 doping agent Substances 0.000 claims abstract description 18
- UFVXQDWNSAGPHN-UHFFFAOYSA-K bis[(2-methylquinolin-8-yl)oxy]-(4-phenylphenoxy)alumane Chemical compound [Al+3].C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC=C([O-])C2=NC(C)=CC=C21.C1=CC([O-])=CC=C1C1=CC=CC=C1 UFVXQDWNSAGPHN-UHFFFAOYSA-K 0.000 claims abstract description 12
- 238000004770 highest occupied molecular orbital Methods 0.000 claims abstract description 8
- 150000001412 amines Chemical class 0.000 claims description 34
- 230000005540 biological transmission Effects 0.000 claims description 16
- 230000027756 respiratory electron transport chain Effects 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 229910000329 aluminium sulfate Inorganic materials 0.000 claims description 4
- 150000004982 aromatic amines Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- MQRCTQVBZYBPQE-UHFFFAOYSA-N 189363-47-1 Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MQRCTQVBZYBPQE-UHFFFAOYSA-N 0.000 claims description 2
- ZDAWFMCVTXSZTC-UHFFFAOYSA-N 2-n',7-n'-dinaphthalen-1-yl-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C(=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C23C4=CC=CC=C4C4=CC=CC=C43)C2=C1 ZDAWFMCVTXSZTC-UHFFFAOYSA-N 0.000 claims description 2
- KJEQVQJWXVHKGT-UHFFFAOYSA-N 9,9-dimethyl-2-n,7-n-dinaphthalen-1-yl-2-n,7-n-diphenylfluorene-2,7-diamine Chemical compound C1=C2C(C)(C)C3=CC(N(C=4C=CC=CC=4)C=4C5=CC=CC=C5C=CC=4)=CC=C3C2=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 KJEQVQJWXVHKGT-UHFFFAOYSA-N 0.000 claims description 2
- 159000000013 aluminium salts Chemical class 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- 150000002220 fluorenes Chemical class 0.000 claims description 2
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229960003540 oxyquinoline Drugs 0.000 claims description 2
- YXVFYQXJAXKLAK-UHFFFAOYSA-N p-hydroxybiphenyl Natural products C1=CC(O)=CC=C1C1=CC=CC=C1 YXVFYQXJAXKLAK-UHFFFAOYSA-N 0.000 claims description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 claims 2
- 235000010290 biphenyl Nutrition 0.000 claims 1
- 239000004305 biphenyl Substances 0.000 claims 1
- 125000005259 triarylamine group Chemical group 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 65
- 229910052757 nitrogen Inorganic materials 0.000 description 23
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 5
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Chemical compound [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 150000004032 porphyrins Chemical class 0.000 description 3
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- RBTKNAXYKSUFRK-UHFFFAOYSA-N heliogen blue Chemical group [Cu].[N-]1C2=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=NC([N-]1)=C(C=CC=C3)C3=C1N=C([N-]1)C3=CC=CC=C3C1=N2 RBTKNAXYKSUFRK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- GRHFIPKABQYICC-UHFFFAOYSA-N 1,1'-biphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1.C1=CC=CC=C1C1=CC=CC=C1 GRHFIPKABQYICC-UHFFFAOYSA-N 0.000 description 1
- GKEUODMJRFDLJY-UHFFFAOYSA-N 1-Methylfluorene Chemical class C12=CC=CC=C2CC2=C1C=CC=C2C GKEUODMJRFDLJY-UHFFFAOYSA-N 0.000 description 1
- 125000001637 1-naphthyl group Chemical group [H]C1=C([H])C([H])=C2C(*)=C([H])C([H])=C([H])C2=C1[H] 0.000 description 1
- OGGKVJMNFFSDEV-UHFFFAOYSA-N 3-methyl-n-[4-[4-(n-(3-methylphenyl)anilino)phenyl]phenyl]-n-phenylaniline Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 OGGKVJMNFFSDEV-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- -1 derivative of fluorine hydrocarbon Chemical class 0.000 description 1
- AKUNKIJLSDQFLS-UHFFFAOYSA-M dicesium;hydroxide Chemical compound [OH-].[Cs+].[Cs+] AKUNKIJLSDQFLS-UHFFFAOYSA-M 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 229920003240 metallophthalocyanine polymer Polymers 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000003003 spiro group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Abstract
The present invention relates to a phosphorescent Organic Light Emitting Device (OLED) having a light emitting layer containing a host material and a guest material including a phosphorescent dopant material and a triarylamine having a HOMO value smaller than that of the host light emitting material BAlq (5.7eV) of the light emitting layer, so that a driving voltage of the OLED device can be reduced and an operation life of the device can be extended.
Description
Technical field
The present invention relates to organic luminescent device, and be particularly related to phosphorescence organic light-emitting device and application thereof.
Background technology
OLED was from 1987, after Kodak develops first high efficiency organic electroluminescence device, just cause the attention of industrial circle, because organic electroluminescence device has high brightness, frivolous, self-luminous, low consumpting power, do not need backlight, limit at no visual angle, processing procedure is simple and easy and good characteristic such as high reaction rate, be regarded as the rising star of flat-panel screens.
Electroluminescent principle is: an organic semiconductor thin-film device, under the extra electric field effect, electronics and hole are injected by negative electrode and anode respectively, and in this device, transmit, when electronics, hole after luminescent layer meets, in conjunction with forming exciton, exciton is given light emitting molecule with energy delivery under electric field action again for electronics and hole, and light emitting molecule just discharges the form of energy with light.
The OLED of prior art comprises anode and negative electrode, and is located in the luminescent layer between anode and negative electrode.Can press from both sides according to circumstances between luminescent layer and negative electrode and establish electron injecting layer and electron transfer layer, can press from both sides according to circumstances between luminescent layer and anode and establish hole injection layer and hole transmission layer.The improvement that goes out with these multilayer conception derivings comprises: establish resilient coating (buffer layer) to increase the probability that the electron hole is incorporated into luminescent layer at layer and interlayer folder, or the material mixing of multilayer formed certain one deck to improve device efficiency, disclosed as US 6803720, form luminescent layer after the material mixing of phosphorescence dopant material and hole transmission layer, electron transfer layer, this device does not have hole transmission layer, but still has electron transfer layer; Another example is disclosed as US 6734457, forms luminescent layer after the material mixing of phosphorescence dopant material and electron transfer layer, and this device does not have electron transfer layer, but still has hole transmission layer.
And how to utilize the known substances or derivatives thereof to mix luminescent layer, and then improve luminous efficiency, brightness and the device lifetime of luminescent layer, reduce the operating voltage of device, be a problem needing solution now badly.
Summary of the invention
In view of this, the invention provides a kind of phosphorescence luminescent device, comprise the anode, the negative electrode that are arranged on the transparency carrier, be located in the luminescent layer between anode and negative electrode.This luminescent layer comprises phosphorescent light body material, phosphorescence dopant material, triaromatic amine.
The present invention also provides a kind of display unit, comprises above-mentioned phosphorescence organic light-emitting device, and the drive circuit that is coupled to phosphorescence organic light-emitting device, with the braking phosphorescence organic light-emitting device.
Description of drawings
Fig. 1 is the phosphorescent OLED structure of embodiment of the invention 1-7.
Fig. 2 is the phosphorescent OLED structure of comparing embodiment 1-2.
Fig. 3 is the current density-driving voltage curve chart of the embodiment of the invention 7 and comparing embodiment 2.
Fig. 4 is the brightness-driving voltage curve chart of the embodiment of the invention 7 and comparing embodiment 2.
Fig. 5 is the device operation life-span comparison diagram of the embodiment of the invention 7 and comparing embodiment 2.
Fig. 6 is for using the schematic diagram of organic luminescent device display unit of the present invention.
Fig. 7 is comparing embodiment 1-2, and the hole enters the energy diagram of luminescent layer from hole transmission layer.
Fig. 8 is embodiment 1-7, and the hole enters the energy diagram of luminescent layer from hole transmission layer.
Description of reference numerals
11～transparency carrier; 13～anode; 15～hole injection layer; 16～hole transmission layer; 17,27～luminescent layer; 18～electron transfer layer; 19～negative electrode; 61～display unit; 63～drive circuit; 65～phosphorescence organic light-emitting device
Embodiment
Fig. 1 is the oled layer shape structure of the embodiment of the invention, comprises the anode 13 and negative electrode 19 that are arranged on the substrate 11, and the luminescent layer 17 that folder is established between anode and negative electrode.
The thickness of luminescent layer 17 is preferably the 200-600 dust, comprises material of main part and guest materials, and guest materials comprises phosphorescence dopant material and triaromatic amine.The volume ratio of material of main part and triaromatic amine is preferably 99: 1-50: 50, and material of main part adds triaromatic amine: the volume ratio of phosphorescence dopant material is preferably 100: 1-100: 30.Material of main part can comprise that asymmetric aluminium complex is (as the two (2-methyl-oxines-nitrogen 1 of BAlq, oxygen 8)-(1,1 '-biphenyl-oxygen 4)-aluminium salt or 8-(oxyquinoline)-(4-phenylphenol) aluminium salt) or the compound of carbazole series (as the CBP or derivatives thereof).This phosphorescence dopant material can comprise that luminous guest materials comprises Ir complex compound or Pt complex compound.According to the present invention, the HOMO value of triaromatic amine needs less than the main body luminescent material BAlq (5.7eV) of luminescent layer or its hole migration speed main body luminescent material greater than luminescent layer, energy diagram by Fig. 1, we can understand when the hole enters luminescent layer 27 by hole transmission layer 16, hole transmission layer 16 will influence device drive voltage with the HOMO energy level difference of luminescent layer 27 this moment, energy level difference more then energy barrier is bigger, and device drive voltage is higher.Shown in the energy diagram of Fig. 8, when the hole enters luminescent layer 17 by hole transmission layer 16, this moment, luminescent layer 17 was because of the doping triaromatic amine, its HOMO value is littler than the HOMO value of material of main part, therefore can reduce the energy level difference between hole transmission layer 16 and the luminescent layer 17, so can reduce the device energy barrier, impel device drive voltage to reduce.Preferred person in this type of triaromatic amine comprises with the triaromatic amine of biphenyl (biphenyl) as symmetrical centre, as N, and N,-two naphthyl-N, N ,-two phenyl-1,1 ,-two phenyl-1,1,-xenyl-4,4 ,-diamine (hereinafter to be referred as NPB), N, N, N ', N '-four naphthyls-xenyl-4,4 '-diamine (hereinafter to be referred as HT2), or derivatives thereof.Also comprise in addition with the triaromatic amine of fluorenes (fluorene) as symmetrical centre, as N, N '-two (naphthyl)-N, N '-two phenyl-9, the two methyl fluorenes (hereinafter to be referred as DMFL-NPB) of 9-, spiro-NPB, spiro-TAD, or derivatives thereof.Experiment shows, adds triaromatic amine and can reduce OLED device drive voltage in luminescent layer, and prolong the device operation lifetime.In the preferred embodiments of the present invention, can reduce the about 0.4-0.8V of voltage, and increase about 15-25% of device operation life-span.
The molecular structure of above-mentioned triaromatic amine is as follows:
The HOMO value comparison sheet of above-mentioned triaromatic amine is summarized in as in the following table 1:
Table 1
| Triaromatic amine (Triaryamine) | HOMO value (eV) |
| BAlq | 5.70 |
| NPB | 5.32 |
| HT2 | 5.50 |
| Spiro TAD | 5.35 |
| Spiro NPB | 5.36 |
| DPFL NPB | 5.35 |
And in the phosphorescence organic light-emitting device of the present invention, negative electrode 19 can be identical or different with the material of anode 13, comprises metal, metal alloy, transparent metal oxide or above-mentioned mixed layer, as long as at least one in anode 13 and the negative electrode 19 is transparency electrode.
Phosphorescence organic light-emitting device of the present invention is except that said structure, also can comprise hole injection layer (HIL) 15 or the hole transmission layer (HTL) 16 that are arranged between anode 13 and the luminescent layer 17, and be arranged at electron injecting layer (EIL) (not shown) or electron transfer layer (ETL) 18 between negative electrode 19 and the luminescent layer 17.Hole injection layer 15 can be amine (p-doped amine) derivative of fluorine hydrocarbon polymer, porphyrin (porphyrin) derivative or doping p-type admixture, and derivatives of porphyrin can be metal phthalocyanine (metallophthalocyanine) derivative, for example is copper phthalocyanine (copper phthalocyanine).
Electron injecting layer (not shown) can be alkali halide, alkaline-earth halide, alkali metal oxide or metal carbonate compound, for example is lithium fluoride (LiF), cesium fluoride (CsF), sodium fluoride (NaF), calcirm-fluoride (CaF
2), lithia (Li
2O), cesium oxide (Cs
2O), sodium oxide molybdena (Na
2O), lithium carbonate (Li
2CO
3), cesium carbonate (Cs
2CO
3) or sodium carbonate (Na
2CO
3), and the thickness of electron injecting layer is preferably between 5～50 dusts.
As shown in Figure 6, be display unit of the present invention, it comprises above-mentioned phosphorescence organic light-emitting device, and the drive circuit that is coupled to this phosphorescence organic light-emitting device, and with the braking phosphorescence organic light-emitting device, its drive circuit is preferably thin-film transistor.
Embodiment
Embodiment 1-3
Please refer to Fig. 1, the phosphorescent OLED structure of embodiment 1-3 comprises:
Anode 13: the indium tin oxide of about 75 nanometer thickness (hereinafter to be referred as ITO) is arranged on the transparency carrier 11;
HIL 15: about 60 nanometer thickness 4,4 ', 4 "-three (N-(2-naphthyl)-N-anilino-)-triphenylamines (hereinafter to be referred as 2T-NATA);
HTL 16: the NPB of about 20 nanometer thickness;
Luminescent layer 17: about 40 nanometer thickness, material of main part is two (2-methyl-oxines-nitrogen 1, oxygen 8)-(1,1 '-xenyl-oxygen 4)-aluminium salt (Bis (2-methyl-8-quinolinolato-N1, O8)-(1,1 '-Biphenyl-4-olato) aluminum, hereinafter to be referred as BAlq), guest materials comprises phosphorescence dopant material (Ir (piq)
2(acac)) and triaromatic amine (NPB), volume ratio is 100 (material of main parts): 12 (phosphorescence dopant material): x (triaromatic amine), doping rate x=10 (embodiment 1), 30 (embodiment 2), 50 (embodiment 3);
ETL 38: the Alq of about 30 nanometer thickness
3: Li (molecule: the mol ratio of atom is 1: 1);
EIL (not shown): the lithium fluoride of about 1 nanometer thickness; And
Negative electrode 39: the aluminium of about 150 nanometer thickness.
The structure of 2T-NATA, BAlq is as follows:
Embodiment 4-6
Please refer to Fig. 1, the phosphorescent OLED structure of embodiment 4-6 comprises:
Anode 13: the ITO of about 75 nanometer thickness is arranged on the transparency carrier 11;
HIL 15: the 2T-NATA of about 60 nanometer thickness;
HTL 16: the NPB of about 20 nanometer thickness;
Luminescent layer 17: about 40 nanometer thickness, material of main part are BAlq, and guest materials comprises phosphorescence dopant material (Ir (piq)
2(acac)) and triaromatic amine (spiro TAD), volume ratio is 100 (material of main parts): 12 (phosphorescence dopant material): x (triaromatic amine), doping rate x=5 (embodiment 4), 10 (embodiment 5), 20 (embodiment 6);
ETL 18: the Alq of about 30 nanometer thickness
3: Li (molecule: the mol ratio of atom is 1: 1);
EIL (not shown): the lithium fluoride of about 1 nanometer thickness; And
Negative electrode 19: the aluminium of about 150 nanometer thickness.
Comparing embodiment 1
Please refer to Fig. 2, the phosphorescent OLED structure of comparing embodiment 1 comprises:
Anode 13: the ITO of about 75 nanometer thickness is arranged on the transparency carrier 11;
HIL 15: the 2T-NATA of about 60 nanometer thickness;
HTL 16: the NPB of about 20 nanometer thickness;
Luminescent layer 27: about 40 nanometer thickness, material of main part are BAlq, and guest materials comprises phosphorescence dopant material (Ir (piq)
2(acac)), volume ratio is 100 (material of main parts): 12 (phosphorescence dopant materials);
ETL 18: the Alq of about 30 nanometer thickness
3: Li (molecule: the mol ratio of atom is 1: 1);
EIL (not shown): the lithium fluoride of about 1 nanometer thickness; And
Negative electrode 19: the aluminium of about 150 nanometer thickness.
Now embodiment 1-6 and comparing embodiment 1 are done one relatively as table 2:
Table 2
| Embodiment | Triaromatic amine | The doping rate | Operating voltage (V) | Brightness (cd/m 2) | Luminous efficiency (cd/A) | Device lifetime (hour) |
| 1 | |
10 | 5.2 | 1000 | 6.8 | 1000 |
| 2 | |
20 | 5.2 | 1000 | 5.5 | 400 |
| 3 | |
50 | 5.0 | 1000 | 3.1 | 210 |
| 4 | |
5 | 5.4 | 1000 | 7.2 | NA |
| 5 | |
10 | 5.1 | 1000 | 6.8 | NA |
| 6 | |
20 | 4.8 | 1000 | 3.5 | NA |
| Compare 1 | Do not have | Do not have | 6.0 | 1000 | 7.0 | 800 |
*Annotate: the initial brightness of device lifetime is 2000 candle lights
Can know discovery by table 2, the doping of triaromatic amine can reduce operating voltage and increase device lifetime, but is not high more good more (can reduce luminous efficiency and device lifetime on the contrary), and preferred material of main part: the triaromatic amine volume ratio is 99: 1-50: 50.
Please refer to Fig. 1, the phosphorescent OLED structure of embodiment 7 comprises:
Anode 13: the ITO of about 75 nanometer thickness is arranged on the transparency carrier 11;
HIL 15: the 2T-NATA of about 60 nanometer thickness;
HTL 16: the NPB of about 30 nanometer thickness;
Luminescent layer 17: about 40 nanometer thickness, material of main part are BAlq, and guest materials comprises phosphorescence dopant material (Ir (piq)
2) (acac)), volume ratio is 100: 12;
ETL 18: the Alq of about 30 nanometer thickness
3
EIL (not shown): the lithium fluoride of about 1 nanometer thickness; And
Negative electrode 19: the aluminium of about 150 nanometer thickness.
Comparing embodiment 2
Please refer to Fig. 2, the phosphorescent OLED structure of comparing embodiment 2 comprises: anode 13: the ITO of about 75 nanometer thickness is arranged on the transparency carrier;
HIL 15: the 2T-NATA of about 60 nanometer thickness;
HTL 16: the NPB of about 30 nanometer thickness;
Luminescent layer 27: about 40 nanometer thickness, material of main part are BAlq, and guest materials comprises phosphorescence dopant material (Ir (piq)
2) (acac)), volume ratio is 100: 12;
ETL 18: the Alq of about 30 nanometer thickness
3
EIL (not shown): the lithium fluoride of about 1 nanometer thickness; And
Negative electrode 19: the aluminium of about 150 nanometer thickness.
Now embodiment 7 is done one relatively with comparing embodiment 2, Fig. 3 and Fig. 4 show that all embodiment 7 has lower driving voltage.As shown in Figure 3, comparing embodiment 2 needs 5.9V to reach 20mA/cm
2Current density, 7 of embodiment only need 5.4V, have lacked 0.5V than the comparing embodiment 2 of not adding aromatic amine.As shown in Figure 4, (the CIE coordinate is 0.66,0.34 to comparing embodiment 2 need 5.8V to reach 1000 candle lights, luminous efficiency is 5.3) brightness, 2 of embodiment only need 5.3V, and (the CIE coordinate also is 0.66,0.34, luminous efficiency also is 5.3), lacked 0.5V than the comparing embodiment 2 of not adding triaromatic amine.Fig. 5 showed embodiment 7 after 500 hours, and device decays to 66% of initial brightness, and comparing embodiment 2 has decayed to 58% of initial brightness, confirmed that the present invention mixes triaromatic amine at luminescent layer and can improve device lifetime.
Though the present invention discloses as above with a plurality of preferred embodiments; right its is not in order to limit the present invention; any those skilled in the art; without departing from the spirit and scope of the present invention; should do various changes and retouching, so protection scope of the present invention should be with being as the criterion that appended claims was limited.
Claims (19)
1. phosphorescence organic light-emitting device comprises:
Anode and negative electrode; And
Be arranged at the luminescent layer between anode and the negative electrode, this luminescent layer comprises material of main part and guest materials, and this guest materials comprises phosphorescence dopant material and triaromatic amine, and this material of main part comprises asymmetric aluminium complex.
2. phosphorescence organic light-emitting device as claimed in claim 1, the volume ratio of wherein said material of main part and described triaromatic amine is between 99: 1-50: 50.
3. phosphorescence organic light-emitting device as claimed in claim 1, wherein said material of main part adds triaromatic amine: the volume ratio of described phosphorescence dopant material is between 100: 1-100: 30.
4. phosphorescence organic light-emitting device as claimed in claim 1 is provided with hole transmission layer between wherein said anode and described luminescent layer, is provided with electron transfer layer between described negative electrode and described luminescent layer.
5. phosphorescence organic light-emitting device as claimed in claim 4 is provided with hole injection layer between wherein said hole transmission layer and described anode; Be provided with electron injecting layer between described electron transfer layer and described negative electrode.
6. phosphorescence organic light-emitting device as claimed in claim 1, the thickness of wherein said luminescent layer are the 200-600 dust.
7. phosphorescence organic light-emitting device as claimed in claim 1, wherein said asymmetric aluminium complex comprise BAlq or 8-(oxyquinoline)-(4-phenylphenol) aluminium salt.
8. phosphorescence organic light-emitting device as claimed in claim 1, the described phosphorescence dopant material of wherein said luminescent layer comprises Ir complex compound or Pt complex compound.
9. phosphorescence organic light-emitting device as claimed in claim 1, the HOMO value of wherein said triaromatic amine is less than 5.7eV.
10. phosphorescence organic light-emitting device as claimed in claim 9, wherein said triaromatic amine have the symmetrical centre of biphenyl as these three grades of aromatic amines.
11. phosphorescence organic light-emitting device as claimed in claim 10, wherein said triaromatic amine comprise NPB, HT2 or derivatives thereof.
12. phosphorescence organic light-emitting device as claimed in claim 9, wherein this triaromatic amine has the symmetrical centre of fluorenes as these three grades of aromatic amines.
13. phosphorescence organic light-emitting device as claimed in claim 12, the described triaromatic amine of wherein said luminescent layer comprises DMFL-NPB, spiro-NPB, spiro-TAD or derivatives thereof.
14. phosphorescence organic light-emitting device as claimed in claim 1, at least one in wherein said negative electrode and the described anode is transparency electrode.
15. phosphorescence organic light-emitting device as claimed in claim 14, wherein said negative electrode and described anode comprise metal, metal alloy, transparent metal oxide or above-mentioned mixed layer.
16. phosphorescence organic light-emitting device as claimed in claim 14, wherein said negative electrode is identical with the material of described anode.
17. phosphorescence organic light-emitting device as claimed in claim 14, wherein said negative electrode is different with the material of described anode.
18. a display unit comprises:
Phosphorescence organic light-emitting device as claimed in claim 1; And
Be coupled to the drive circuit of this phosphorescence organic light-emitting device, to brake this phosphorescence organic light-emitting device.
19. display unit as claimed in claim 18, wherein said drive circuit comprises thin-film transistor.
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| CNB2005101268259A CN100518423C (en) | 2005-11-22 | 2005-11-22 | Phosphorescent organic light emitting device and display apparatus including the same |
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| Title |
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| 光电功能超薄膜. 黄春辉，李富友，黄岩谊，269，北京大学出版社. 2001 * |
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