CN100533180C - Electromagnetic polarization structure and polarized electromagnetic wave element - Google Patents

Abstract

An electromagnetic polarization structure can polarize non-polarized (or partially) polarized electromagnetic waves. The electromagnetic polarization structure includes a polarization layer. The polarization layer comprises a plurality of medium monomers which are distributed into a two-dimensional array, wherein the array is defined with an operation axis, and the distribution of the medium monomers is asymmetric to the operation axis through at least two medium monomers. Further, since the polarized electromagnetic wave element includes the electromagnetic polarization structure and the electromagnetic wave radiation structure, it can emit polarized electromagnetic waves.

Description

Electromagnet polarization structure and polarization electromagnetic wave element

Technical field

The present invention relates to a kind of electromagnetic wave polarization technology, particularly a kind of technology of electromagnetic wave polarization structure can be with non-(or part) polarization electromagnetic wave (or light) polarization fully.

Background technology

General electromagnetic wave or only exist with the state of non-polarizationization.Here indication only refers to the electromagnetic wave of frequency in a particular range.Because the direction of electromagnetic electric field polarization is inconsistent, and be not suitable for (or restriction) some application.For example, laser system, display device or optical communication system or the like all need to use the light of polarization, and therefore can use can be with the polar biased sheet of electromagnetic wave polarization.The design of polar biased sheet has a variety of modes, and more traditional technology is to use grating to produce.Yet the development of conjunction with semiconductors technology, the design of polar biased sheet has multiple variation.

In the life in modern times, semiconductor element such as light emitting diode and wall emission laser very generally are employed as light source.Below just do simple declaration with light emitting diode.Fig. 1 is traditional light emitting diode construction synoptic diagram.In Fig. 1, light emitting diode comprises transparency carrier 100.On transparency carrier 100, can be formed with clad (clad layer) 102 (ntype) down successively, active layer (active layer) 104, and go up clad (clad layer) 106 (p type).On last clad 106 (p type), can be formed with electrode layer 108 in addition, and also be formed with another electrode layer 110 for 100 times at substrate.Fig. 1 is the basic structure of semi-conductive light emitting diode, and its thin portion structure should be general person of ordinary skill in the field as can be known, and is not described in detail.

Fig. 2 represents the luminous mechanism of light emitting diode.When upper/lower electrode layer 108,110 applied operating voltage, hole 114 and electronics 116 meetings were by electric field driven, and past active layer 104 moves.At the Potential distribution in hole 114 shown in equipotential line 111, and at the Potential distribution of electronics 116 shown in equipotential line 112.When hole 114 and electronics 116 active layer 104 in conjunction with and disappear mutually (annihilation), discharge light 118 according to the energy that is had.This light generally is the state that is in non-polarizationization or part polarization.

Fig. 1 is the simple synoptic diagram of traditional light emitting diode and wall emission laser, though can produce light source, does not have a polar biased effect.In practical application, in order to obtain the light of polarization, generally need add the polar biased sheet, transfer in fact all the light of non-polarizationization to polarization light in a direction.Yet,,, allow directly to be made in the light emitting diode in order to structure with the light polarization because the development of semiconductor fabrication cooperates Electromagnetic theory.Yet, need some designs just can reach the structure of light polarization.The fabricator is also more efficient in the continuation research and development, cost is lower and the polar biased sheet of easy manufacturing.

General polarization electromagnetic wave be by the polar biased sheet with non-(or part) polarization electromagnetic wave (or light) polarization, or distinctly make up polar biased sheet and light-emitting component and produce.Shortcoming is that polar biased sector-meeting minimizing light intensity is over half, and and for example individually in conjunction with polar biased sheet and light-emitting component, different medium interfaces also can cause reflection loss, and the design of traditional raster polar biased sheet is too complicated, manufacturing cost is not low or use expensive material.

Summary of the invention

The present invention will address the above problem, and utilizes different design concept, directly with the structure of polarization, is incorporated on the material of existing element, does not need (or not needing too many) admixture, and above-mentioned shortcoming is greatly reduced.

The invention provides a kind of electromagnetic wave polarization structure, utilize the two-dimensional array effect of electromagnetic wave and the asymmetric distribution of being formed by a plurality of media monomers (media), the frequency of corresponding selection, to isolate or to change TE Mode component and TM Mode component in the electromagnetic wave fully, reach the feature mode (Eigen-Mode) of even, pure (or approaching) single direction of complete TEMode direction or TM Mode direction, and the polar biased vibration of corresponding electric field, be even, single direction.TE (or TM) Mode is the middle electromagnetic wave of advancing, and its electric field (or magnetic field) vibration polar biased direction is parallel to the polarization structure plane.Relevant for the feature mode (Eigen-Mode) of TE (or TM) Mode direction, for example as TE _0,1, TE _1,0Can consult Shun Lien Chuang Deng Eigen-Mode, Chapter 7, Physics ofOptoelectronic Devices (John Wiley ﹠amp; Sons, Inc., 1995).The present invention provides a kind of polarization electromagnetic wave element again, uses above-mentioned electromagnetic wave polarization structure and irradiation structure layer, for example as light emitting diode, can therefore send polarization electromagnetic wave (polarization light).

The present invention proposes a kind of electromagnet polarization structure, can be with the polarization of non-(or part) polarization electromagnetic wave.This electromagnet polarization structure comprises polarization layer.This polarization layer has a plurality of media monomers, and above-mentioned these media monomer distribution become two-dimensional array, and wherein this two-dimensional array definition has operating axis, and by at least two above-mentioned these media monomers, the distribution of above-mentioned these media monomers is non-this operating axis that are symmetrical in; Wherein, this non-polarization electromagnetic wave is by the point of this two-dimensional array at photonic band structures; At the one-component in a plurality of TE feature mode polar biased durection components and a plurality of TM feature mode polar biased durection component, this electromagnet polarization structure is to separate with different the doing of frequency response of described TM feature mode polar biased durection component according to TE feature mode polar biased durection component described in this non-polarization electromagnetic wave.Here indication " symmetry (or asymmetric) is in this operating axis " is can be by above-mentioned these planes, media monomer place to this operating axis Rotate 180 ° decision, if the plane space of above-mentioned these media monomers in rotation back distributes preceding identical with rotation, then " be symmetrical in this operating axis ", otherwise " asymmetric in this operating axis ".According to the described electromagnet polarization structure of preferred embodiment of the present invention, above-mentioned these media monomers generally are perpendicular to the profile direction of side and the degree of depth are arranged, more than or equal to 1/4th of this electromagnetic wavelength.

According to structure of the present invention, wherein this polarization electromagnetic wave is by the reciprocation of non-polarization electromagnetic wave with this asymmetric two-dimensional array, its relation can be used TM Mode polar biased component on photonic band structures (Photonic BandStructure) (or frequency dispersion curve (Dispersion the Curve)) point and all Eigen-Modes of TE Mode polar biased component, this electromagnet polarization structure is different with the reaction of the frequency of described TM feature mode polar biased durection component and separate according to TE feature mode polar biased durection component described in this non-polarization electromagnetic wave, and this reciprocation can change the corresponding electric field polar biased vibration of different frequency institute for evenly, single direction.

The present invention proposes a kind of polarization electromagnetic wave element, can produce polarization electromagnetic wave, comprises the irradiation structure layer, can send the non-polarization electromagnetic wave during operation; And the electromagnet polarization structure layer, can be with non-(or part) polarization electromagnetic wave polarization of passing through.A plurality of media monomers are wherein arranged in the electromagnet polarization structure layer, be scattered in two-dimensional array, wherein this two-dimensional array has operating axis, and by at least two above-mentioned these media monomers, the distribution of above-mentioned these media monomers is non-this operating axis that are symmetrical in; Wherein, this non-polarization electromagnetic wave by with this two-dimensional array at the Γ of photonic band structures to the one-component in a plurality of TE feature mode polar biased durection components and a plurality of TM feature mode polar biased durection component, this electromagnet polarization structure is to separate with different the doing of frequency response of described TM feature mode polar biased durection component according to TE feature mode polar biased durection component described in this non-polarization electromagnetic wave.

According to the described polarization electromagnetic wave element of preferred embodiment of the present invention, wherein this irradiation structure layer and this electromagnet polarization structure layer are integrated into ray structure, for example comprise substrate.First electrode layer is formed under this substrate, the wherein also effect of tool reflection incident electromagnetic wave (light) of this first electrode.First clad (clad layer) is formed on this substrate, and above-mentioned a plurality of media monomer is wherein arranged at the degree of depth place of this first clad, and above-mentioned these media monomer distribution become this two-dimensional array.Active layer (activelayer) is formed on this first clad.Second clad is formed on this active layer.The second electrode lay is formed on this second clad.When producing suitable bias voltage (voltage bias) between this first electrode layer and this second electrode lay, this active layer can send this non-polarization light, effect by this two-dimensional array produces this polarization electromagnetic wave (light), this the second electrode lay can use transparent material or not cover this second clad fully, in order to printing opacity, as shown in Figure 3A.

According to the described polarization electromagnetic wave element of another preferred embodiment of the present invention, all structures are all identical with above-mentioned this embodiment, except this two-dimensional array of this media monomer distribution is not at this first clad but at this second clad, shown in Fig. 3 B.

According to one embodiment of the invention, aforesaid any media monomer is the material that has with clad or polarization layer different refractivity, and preferable for example is hole.

According to one embodiment of the invention, aforementioned first clad for example comprises ground floor, and there are a plurality of recesses on its surface; And the second layer, be placed on this first's layer, above-mentioned these recesses are covered, and form above-mentioned these media monomers.

According to one embodiment of the invention, the array born of the same parents that aforesaid above-mentioned these media monomers are constituted, preferable rectangular unit cell or the inequilateral parallelogram structure cell of comprising.

The present invention adopts above-mentioned polar biased structure, can be effectively to incident electromagnetic wave, make it polarization in TE Mode direction or TM Mode direction, become evenly, pure (or approaching) single Eigen-Mode, and the polar biased direction of vibration of the corresponding electric field of institute is an electromagnetic wave even, single direction.In addition, because simple in structure, and also can the conjunction with semiconductors manufacturing technology finish, manufacturing cost is greatly reduced.

State with other purpose, feature and advantage and can become apparent on the present invention for allowing, preferred embodiment cited below particularly, and conjunction with figs. are described in detail below.

Description of drawings

Fig. 1 is the diagrammatic cross-section of traditional light emitting diode construction side.

Fig. 2 is the luminous mechanism synoptic diagram of light emitting diode.

Fig. 3 A～3B is the diagrammatic cross-section according to the light emitting diode construction side of the embodiment of the invention.

The sectional view that Fig. 4 A overlooks is represented according to the embodiment of the invention, the structure of the media monomer on polarization layer and electromagnetic relation.

Fig. 4 B is-M, Г-X be in reciprocal lattice vector floor map.

Fig. 5 is the structural representation of the two-dimensional array according to the present invention.

Fig. 6 A～6B is according to frequency band of the present invention since by the Г point with K ₁₁=2 π/λ ₁₁The distribution plan of component change in location.

Fig. 7 A～7B is the frequency band synoptic diagram that known square structure cell two-dimensional array has the degeneracy phenomenon.

Fig. 8 A～8B is that corresponding diagram 7B Eigen-Mode A electric field E and magnetic field H size and direction are to XZ plane space distribution plan.Arrow is represented electric field (or magnetic field) direction, and electric field level is by color representation, and solid line circle is represented media monomer 214, and dotted arrow and circle are represented the corresponding electric field E (or magnetic field H) of institute direction.

Fig. 9 A～9D be the electric field level of corresponding diagram 6B Eigen-Mode A, B, C, D and direction to XZ plane space distribution plan, the linear polarization of the electromagnetic wave of Eigen-Mode A, B, C, D as shown in the figure.

Figure 10 A～10D is the manufacturing side cut away view according to the electromagnet polarization structure of the embodiment of the invention.

The main element description of symbols

100,200: substrate

102,202: following clad

104,204: active layer

106,206: go up clad

108,208: electrode

110,210: electrode

111: the hole current potential

112: electronic potential

114: the hole

116: electronics

118: light

212: the polar biased structural sheet

214: the media monomer

500a～500d: cell configuration

502: operating axis

600,608: semiconductor material layer

602: recess

606: column structure

Embodiment

According to Electromagnetic theory, the electromagnetic wave of non-polarizationization (electromagnetic wave, EM wave), response characteristic at medium, can include TE pattern (TE-Mode) and two components of TM pattern (TM-Mode), its corresponding two mutually perpendicular electromagnetic wave Eigen-Modes direction of vibration components.If electromagnetic wave only contains TE polar biased component or TM polar biased component, then this electromagnetic wave is exactly the electromagnetic wave of polarization.Here indication electromagnetic wave comprises the scope of visible light.With regard to the angle of light, non-polarization electromagnetic wave (light) but be that polar biased changes into TM-Mode polar biased (light) or TE-Mode polar biased (light), become evenly, the electromagnetic wave of the polar biased direction of vibration of pure (or approaching) single Eigen-Mode electric field.About why the electromagnetic wave polar biased of non-polarizationization can being become TM polar biased electromagnetic wave or the electromagnetic mechanism of TE polar biased, after will being described in.Following act earlier light emitting diode construction of the present invention is an example, as an illustration.Yet, the present invention be not subject to for embodiment.

Fig. 3 A, 3B are the diagrammatic cross-section according to the light emitting diode construction side of the embodiment of the invention.Consult Fig. 3 A, 3B,, comprise substrate 200 at light emitting diode construction.Substrate 200 is that the material of printing opacity for example is silicon, sapphire or spinel.Be formed with clad 202, active layer 204, clad 206 successively in substrate 200, wherein the clad 202 of Fig. 3 A (or Fig. 3 B 206) includes polar biased structural sheet 212.Polar biased structural sheet 212 is to utilize a plurality of media monomers 214, is arranged in two-dimensional array.

Two-dimensional array by media monomer 214 is formed also can be considered as a kind of crystal (photonic crystal) to light.Here apprehensiblely be, also can constitute three-dimensional structure by the two-dimensional array of multilayer, the present invention is not restricted to the two-dimensional array of simple layer.The present invention proposes the arrangement architecture of asymmetric two-dimensional array, and definition has operating axis, and it is by at least two above-mentioned these media monomers.It is non-this running axles that are symmetrical in that the present invention proposes to arrange the distribution of these media monomers.The electromagnetic wave (light) of general non-polarizationization, its TE polar biased durection component or TM polar biased durection component on media monomer 214 be degeneracy (degeneration) together, simple and clear speech, TM and TE are under this kind condition, reaction is identical and inseparable each other on the frequency, perhaps how identical TE Mode (or TM Mode) but to react on its frequency of different Eigen-Mode be identical and inseparable each other.But electromagnetic wave and asymmetric two-dimensional array effect when non-polarizationization, because two-dimensional array is asymmetric relation, the non-polarization electromagnetic wave (light) of incident, on media monomer 214, TM polar biased component and TE polar biased component can be different and be separated into single or minority is close to complete similar Eigen-Mode according to the reaction of electromagnetic frequency.Subsequent figures 4A～4B to Fig. 9 A～9D will have more detailed explanation.

Then, two electrode layers 210,208 are set at the both sides of structure.Again, Fig. 3 A only represents that the number of plies of polarization layer 212 is an example of 1, so in fact need also multilayer to be set according to design, and media monomer 214 can pierce through or does not pierce through polarization layer 212, and also can for example at clad 206 another polarization layer be set simultaneously.Again,, make reflection electromagnetic wave (light), therefore can increase the polarization effect once more by polarization layer 212 because electrode layer 210 also can reflect the electromagnetic wave (light) that is sent by active layer 204.

The mechanism of polar biased is below described, and the arrangement of the media monomer 214 on polarization layer 212.Fig. 4 A is two-dimensional array structure and the electromagnetic relation that the vertical view (XZ planimetric map) of polarization layer is represented the media monomer 214 on the polarization layer 212.Fig. 4 B is that Г-M, Г-X are in reciprocal lattice vector floor map.In the electromagnetic wave, it is vertical mutually with the electromagnetic field direction of vibration of Z axle polar biased component that electric field is parallel to X-axis polar biased component, and for example this electric field is in 0 degree and the vibration back and forth of 180 degree, and another person of this electric field is in-90 degree and the vibration back and forth of+90 degree.If electromagnetic wave is parallel to the wave number vector component (K on the XZ plane of polarization layer ₁₁=2 π/λ ₁₁) satisfy the G of two-dimensional array _x=2 π/a, G _z=2 π/two vertical reciprocal lattice vector arbitrary integer times vector sums of b, then this electromagnetic wave can produce Braggdiffraction wave on the XZ plane, this moment, electromagnetic wave can utilize this phenomenon strongly by two-dimensional array Modulated modulation (similar resonance), can be used to change electromagnetic wave polarization characteristic.The two-dimensional array structure of media monomer 214 for example is an E1 rectangle among Fig. 4 A, and two limit a, b are unequal.This two-dimensional array structure for example is made up of rectangular structure cell.Two-dimensional array is had operating axis, for example is both one of two diagonal line C1, the C2 of E1.

With regard to crystal, media monomer 214 residing positions are called the Г point again among Fig. 4 B, and cornerwise direction is defined as Г-M, are defined as Г-X by the Г point to the direction of adjacent media monomer 214 again.Unsymmetric structure of the present invention is that for example to get diagonal line C1 be the operating axis of being wanted, and the media monomer 214 about it is asymmetric with this operating axis.So long as media monomer 214 is asymmetric with this operating axis, then be incident in this two-dimensional array when the electromagnetic wave of non-polarizationization, on media monomer 214,, the variation of frequency is had differential responses by the TE of degeneracy and two components of TM, promptly be can separated or conversion.If therefore suitable selection operation frequency, then the complete similar Eigen-Mode of the single or minority of the one of TE and TM Mode can be selected use.The phenomenon of separating these two components is understood at Fig. 6 A～6B, Fig. 7 A～7B, Fig. 8 A～8B, is described further with Fig. 9 A～9D again.

Again,, be meant that the media monomer 214 of the overwhelming majority is asymmetric under large scale, or all (comprising in the small scale regional location) the media monomer is asymmetric with this operating axis here about being asymmetric with the characteristic of this operating axis.In other words, under special status, media monomer 214 is possible local symmetry in the position, specific region, but whole this operating axis that in fact still is asymmetric with.Can further change and separate the electromagnetic wave TE of non-polarizationization or TM as this two-dimensional array of suitable utilization in electromagnetic wave element and become the complete similar Eigen-Mode polarization electromagnetic wave output of pure, single or minority that whole TE or TM have even, equidirectional electric field polar biased vibration.Fig. 9 A～9D will further specify.

Fig. 5 is the structural representation of the two-dimensional array according to the present invention.In Fig. 5, at operating axis 502,500a, 500b, 500c, 500d are four comparatively concrete cell configuration embodiment.500a is a rectangular unit cell.Can find out by the relation shown in the dotted line, about media monomer 214 be asymmetric with operating axis 502.Again, 500b is the rectangular unit cell with central point, and the media monomer 214 about it also is asymmetric with operating axis 502.Again, cell configuration for example is unequal-sided parallelogram 500c, and the media monomer 214 about it also is asymmetric with operating axis 502.Similarly, the parallelogram 500d with central point also meets the present invention and proposes asymmetric structure.Yet Fig. 5 also only is preferred embodiments more of the present invention.For operating axis 502, as long as the media monomer about it can constitute asymmetric two-dimensional array structure, it all has the polarization effect that the present invention proposes.

The phenomenon that the polar biased effect produces is below described.Fig. 6 A～6B is the frequency band (TE and TM band) (or photonic band gap photonic band structure) of the rectangular unit cell two-dimensional array according to the present invention, and the Г point is with the wave number (K that is parallel to asymmetric two-dimensional array plane ₁₁=2 π/λ ₁₁) distribution plan (λ=electromagnetic wavelength) of change in location, for example for understanding on Г point originally near for the Eigen-Mode A and B resonance bands (in Г-M direction) of degeneracy, structure of the present invention can be separated according to the difference of frequency.In like manner similar situation also can be separated for other two Eigen-Mode C and D resonance bands.Among Fig. 6 A～6B, media monomer and the employed dielectric constant of background dielectric layer thereof for example are respectively 10.56 and 10.92, the major axis (b) in media monomer cycle (or its structure cell), minor axis (a) ratio are b/a=1/0.85, r/a=0.252, the c=light velocity, λ=electromagnetic wavelength, ω=electromagnetic wave angular frequency, a=400nm, r=media monomer hole radius, Fig. 6 B is the enlarged drawing in Fig. 6 A XS zone, and Eigen-ModeA, B, C, D separate fully, no longer degeneracy.

These four resonance bands Eigen-Mode A, B, C and D, under traditional square crystalline network, shown in Fig. 7 A and Fig. 7 B, Fig. 7 A is at square lattice, at the frequency band distribution plan of wide range of frequencies.Fig. 7 B is the amplification distribution plan in the XS zone of Fig. 7 A.By Fig. 7 B as can be seen in Г-M direction, at Eigen-Mode A on the Г point and B is that degeneracy is on a frequency, and Eigen-Mode C and D are that degeneracy is on another frequency, wherein media monomer and the employed specific inductive capacity of background dielectric layer thereof for example are respectively 10.56 and 10.92, and employed media monomer hole radius (r) is r/a=0.252 with the ratio in its structure cell cycle (a), a=400nm, Fig. 7 B are the enlarged drawing in XS zone among Fig. 7 A.

In Fig. 6 A of the present invention, 6B, Eigen-Mode A and B are separated on the different frequency, and Eigen-Mode C and D are separated on the different frequency.Therefore, suitable selection operation frequency, for example Eigen-Mode B and C only it is selected for a moment, reach the polar biased effect.Associated class is like key concept and Fig. 6 A, 6B; Fig. 7 A, 7B; Fig. 8 A, 8B; Fig. 9 A, 9B, 9C, 9D photonic band gap and the corresponding Eigen-Mode electricity of institute (magnetic) calculating principle, can consult Joannopoulos et al., Photonic Crystals, Molding the Flow of Light, (Princeton University Press, Princeton, 1995), Meade et al. " Accurate Theoretical Analysis of PhotonicBand-gap Materials ", Phys.Rev.B48,8434 (1993).

Fig. 8 A and Fig. 8 B are that corresponding diagram 7B Eigen-Mode A electric field E and magnetic field H size and direction are to XZ plane space distribution plan.Arrow is represented electric field E (or magnetic field H) direction, and electric field E (or magnetic field H) size is by color representation, and solid line circle is represented media monomer 214, and dotted arrow and dashed circle are represented the corresponding electric field E (or magnetic field H) of institute direction.

Fig. 9 A, 9B, 9C, 9D are that the electric field level of corresponding diagram 6BEigen-Mode A, B, C, D and direction are to XZ plane space distribution plan, the linear polarization of the electromagnetic wave of Eigen-Mode A, B, C, D as shown in the figure, the pairing frequency of Eigen-Mode A, D is close in addition, and pairing polarization electric field space distributes similar, the pairing polarization electric field space of Eigen-Mode B, the C of different frequency distributes also similar mutually again, as the asymmetric two-dimensional array of suitable selection, r/a and structure cell cycle, then can be with the polarization of non-(or part) polarization electromagnetic wave.

Next continue to describe an embodiment of technology how to make electromagnet polarization structure of the present invention.Figure 10 A and Figure 10 B are the manufacturing sectional views according to the polar biased sheet of the embodiment of the invention.In Figure 10 A, on semiconductor material layer 600, form a plurality of recesses or penetrate hole 602, be to be example here to lift recess.The position of recess 602 is exactly the position of the media monomer 214 among Fig. 3 A, the 3B.If only need to make separately the polar biased sheet, then semiconductor material layer 600 can be used as the substrate of polar biased sheet.Yet if semiconductor material layer 600 is the light-emitting diodes pipe manufacturer that for example cooperate Fig. 3 A, 3B, semiconductor material layer 600 can be the part of clad.

The formation of recess 602 can for example utilize photoetching etching (the photolithographic and etching) technology of semiconductor technology to finish.Here, for preferable polar biased effect is arranged, recess for example is a wavelength in the length perpendicular to semiconductor material layer 600 directions approximately.Yet this length does not have certain restriction, and the difference of length can change the efficient of polarization according to actual design, so preferably can be more than or equal to λ/4.Again, for different refraction coefficients is arranged, recess 602 can be hole or the dielectric material of inserting different materials.For example can also be again organic material, metal material or liquid.Then, in Figure 10 B, second half conductor material layer 604 is formed on the semiconductor material layer 600, for example is to utilize wafer bond techniques (Wafer Bonding or Fusion).Semiconductor material layer 600 is preferably identical with the material of semiconductor material layer 604.Again, semiconductor material layer 600 also can be dielectric material (a perhaps multilayer film lamination) with semiconductor material layer 604.The selection of material can determine according to actual needs.Recess 602 is in order to form aforesaid media monomer 214 or photon crystal structure, so the position is pre-set.The shape of recess 602 again can have different the variation, and is for example similar cylindrical, spheroidal or upright ellipse all can, but do not limit these.Also for example, media monomer 214 can be hole or the hole of filling liquid or above-mentioned any both or any both above equivalent holes that make up of the hole of hole, filled dielectric material, the hole of filling organic material, the hole of filling metal material, the hole of filling solid material, filling multilayer solid material.Again, Figure 10 C～10D represents the structure that constituted with column structure.Can form column structure 606 at semiconductor material layer 600.After second half conductor material layer 608 was covered in column structure 606, column structure provided the array structure of media monomer 214.

The electromagnet polarization structure (polar biased chip architecture) that the present invention proposes, it includes the media monomer array of one deck two dimension, the 214 pairs of operating axis of monomer that utilize the medium are asymmetric in fact designs, make two kinds of polar biased patterns of degeneracy, for example TE and TM, setting that can be by the frequency used is with its separation or conversion.

The polarization electromagnetic wave element that the present invention proposes uses above-mentioned polar biased structure, can effectively produce the electromagnetic wave of polarization, can use especially on light emitting diode, with direct generation polar biased light.And the polar biased chip architecture can also be incorporated into light emitting diode inside, or in laser diode inside.

Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; any person of ordinary skill in the field; without departing from the spirit and scope of the present invention; when can doing a little change and improvement, so protection scope of the present invention is as the criterion when looking the claim person of defining.

Claims (31)

1. An electromagnetic polarization structure that can polarize unpolarized electromagnetic waves, wherein the unpolarized electromagnetic waves are completely unpolarized or partially polarized, and are characterized in that they include: At least one polarizing layer, the polarizing layer contains a plurality of media monomers, the media monomers are distributed in a two-dimensional array, wherein the two-dimensional array has an operating axis, through at least two of the media monomers, the above-mentioned The distribution of media monomers is asymmetric about the operating axis; Wherein, the unpolarized electromagnetic wave passes through the two-dimensional array at the Γ point of the photonic band structure; For one of multiple TE eigenmode polarization direction components and multiple TM eigenmode polarization direction components, the electromagnetic polarization structure is based on the TE eigenmode polarization described in the unpolarized electromagnetic wave The directional component is separated from the frequency response of the polar directional component of the TM eigenmode. 2. The electromagnetic polarization structure according to claim 1, characterized in that the above-mentioned media monomers are substantially perpendicular to the cross-sectional direction of the side of the polarizing layer, and have a depth greater than or equal to a quarter of the wavelength of the electromagnetic wave one. 3. The electromagnetic polarization structure according to claim 1, characterized in that the above-mentioned unpolarized electromagnetic wave is polarized to form a polarized electromagnetic wave, and this polarized electromagnetic wave is one or several similar TM characteristic modes State polarized vibration mode, or one or several similar TE characteristic mode polarized vibration modes, and the corresponding electric field polarized vibration is uniform and single direction. 4. The electromagnetic polarization structure according to claim 1, characterized in that the array cells of the two-dimensional array comprise rectangular cells. 5. The electromagnetic polarization structure according to claim 1, characterized in that the array cells of the two-dimensional array comprise scalene parallelogram cells. 6. The electromagnetic polarization structure according to claim 1, wherein the polarizing layer comprises: a first polarizing layer having a plurality of recesses or penetrating holes on its surface; and The second polarizing layer is placed on the first polarizing layer and covers the plurality of recesses or through holes to form the above-mentioned media monomers. 7 . The electromagnetic polarization structure according to claim 1 , wherein the above-mentioned intermediate monomers are holes filled with solid materials, holes filled with liquid, or equivalent holes of the above two. 8. The electromagnetic polarization structure according to claim 1, wherein the refractive index of the above-mentioned medium monomers is different from the refractive index of the surrounding background coating. 9. The electromagnetic polarization structure according to claim 4 or 5, characterized in that the center of each array cell further includes a central mediator. 10. The electromagnetic polarization structure according to claim 1, characterized in that the above-mentioned media monomers are unfilled holes, holes filled with dielectric materials, holes filled with metal materials, or any two of the above, etc. effect hole. 11. The electromagnetic polarization structure according to claim 1, wherein the above-mentioned intermediate monomers are holes filled with organic materials. 12. The electromagnetic polarization structure according to claim 1, wherein the above-mentioned media elements are pillars. 13. The electromagnetic polarization structure according to claim 1, wherein the above-mentioned intermediary monomers are columns filled with solid materials. 14. The electromagnetic polarization structure according to claim 1, characterized in that said intermediate monomers are pillars filled with organic materials. 15. A polarized electromagnetic wave element capable of generating polarized electromagnetic waves, characterized by comprising: Radiating structures that operate to emit unpolarized electromagnetic waves; and The electromagnetic polarization structure polarizes the passing non-polarized electromagnetic wave, the electromagnetic polarization structure includes at least one polarizing layer, and the polarizing layer contains a plurality of media monomers, and the plurality of media monomers distributed in at least one two-dimensional array, wherein the two-dimensional array has an operative axis through at least two of said mediators, said mediators being distributed asymmetrically about said operative axis; Wherein, the non-polarized electromagnetic wave passes through the Γ point of the photonic band structure with the two-dimensional array; for one component in the polarization direction components of multiple TE eigenmodes and the polarization direction components of multiple TM eigenmodes, The electromagnetic polarization structure is separated according to the difference in frequency response between the polarized direction component of the TE eigenmode and the polarized direction component of the TM eigenmode in the non-polarized electromagnetic wave. 16. The polarized electromagnetic wave element according to claim 15, the radiation structure and the electromagnetic polarization structure are integrated into a light emitting structure, characterized in that the light emitting structure comprises: Substrate; a first electrode layer formed under the substrate, wherein the first electrode layer also has the function of reflecting incident light; A first cladding layer formed on the substrate, wherein there are a plurality of media monomers at the depth of the first cladding layer, and the media monomers are distributed in the above-mentioned two-dimensional array; an active layer formed on the first cladding layer; a second cladding layer formed on the active layer; and a second electrode layer formed on the second cladding layer, Wherein, when a bias voltage is generated between the first electrode layer and the second electrode layer, electrons and holes will respectively move from the first and second cladding layers to the active layer and recombine, and the active layer will emit the non- The polarized electromagnetic wave is generated by the action of the two-dimensional array. 17. The polarized electromagnetic wave device according to claim 16, wherein the second electrode layer is made of a conductive material that can penetrate electromagnetic waves. 18. The polarized electromagnetic wave device according to claim 16, wherein the second cladding layer also includes the same two-dimensional array as the first cladding layer. 19. The polarized electromagnetic wave element according to claim 16, characterized in that the above-mentioned medium monomers are substantially perpendicular to the direction of the side of the polarizing layer, and have a depth greater than or equal to 1/4 of the wavelength of the electromagnetic wave one. 20. The polarized electromagnetic wave element according to claim 16, characterized in that the polarized electromagnetic wave is one or several similar TM eigenmodes, or one or several similar TE eigenmodes, and the corresponding electric field Polar vibrations are uniform and unidirectional. 21. The polarized electromagnetic wave device according to claim 16, wherein the array cells of the two-dimensional array comprise rectangular unit cells. 22. The polarized electromagnetic wave device according to claim 16, wherein the array cell of the two-dimensional array comprises a scalene parallelogram unit cell. 23. The polarized electromagnetic wave element according to claim 21 or 22, characterized in that the center of each array cell further includes a central medium monomer. 24. The polarized electromagnetic wave component according to claim 16, wherein the first cladding layer comprises: a first layer, the surface of which has a plurality of recesses or piercing holes; and The second layer is placed on the first layer and covers the plurality of recesses or through-holes to form the above-mentioned media monomers. 25. The polarized electromagnetic wave device according to claim 16, wherein the above-mentioned intermediate elements are holes. 26. The polarized electromagnetic wave device according to claim 16, wherein the above-mentioned medium monomers are holes filled with solid materials, holes filled with liquid, or equivalent holes of the above two. 27. The polarized electromagnetic wave device according to claim 16, wherein the above-mentioned medium monomers are holes filled with dielectric materials, holes filled with metal materials, or equivalent holes of the two. 28. The polarized electromagnetic wave device according to claim 16, wherein the above-mentioned intermediate monomers are holes filled with organic materials. 29. The polarized electromagnetic wave device according to claim 16, wherein the first cladding layer comprises an electrode polarizing layer to form the two-dimensional array. 30. A polarized electromagnetic wave element capable of generating polarized electromagnetic waves, characterized by comprising: Substrate; Electromagnetic radiation structure, which can emit non-polarized electromagnetic waves during operation; a first cladding layer, cladding one side of the electromagnetic radiation structure; a second cladding layer covering the other side of the electromagnetic radiation structure; and An electromagnetic polarization structure that polarizes the passing non-polarized electromagnetic wave, wherein there are a plurality of media monomers in the electromagnetic polarization structure, distributed into at least one two-dimensional array, wherein the array has an operating axis, By at least two of said mediator monomers, the distribution of said mediator monomers is asymmetric about the operative axis; and A pair of electrodes, respectively contacting the first and the second cladding layer, can be biased. When an appropriate bias is applied to the pair of electrodes for operation, electrons and holes will be respectively covered by the first and the second cladding layer. The layer moves to the electromagnetic radiation structure and recombines, so the electromagnetic radiation structure emits unpolarized electromagnetic waves, and then the unpolarized electromagnetic waves are polarized and output by the electromagnetic polarization structure; Wherein, the unpolarized electromagnetic wave passes through the two-dimensional array at the Γ point of the photonic band structure; For one of multiple TE eigenmode polarization direction components and multiple TM eigenmode polarization direction components, the electromagnetic polarization structure is based on the TE eigenmode polarization described in the unpolarized electromagnetic wave The directional component is separated from the frequency response of the polar directional component of the TM eigenmode. 31. The polarized electromagnetic wave device according to claim 30, wherein the electromagnetic polarized structure is located in the second cladding layer and is closer to an exit surface that outputs the polarized electromagnetic wave.

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