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CN100547356C - A kind of double-pass symmetric emulated offset proportion photoelectric transducer - Google Patents

A kind of double-pass symmetric emulated offset proportion photoelectric transducer Download PDF

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CN100547356C
CN100547356C CNB2007100927987A CN200710092798A CN100547356C CN 100547356 C CN100547356 C CN 100547356C CN B2007100927987 A CNB2007100927987 A CN B2007100927987A CN 200710092798 A CN200710092798 A CN 200710092798A CN 100547356 C CN100547356 C CN 100547356C
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circuit
resistance
capacitor
amplification circuit
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CN101144727A (en
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沈渝昌
沈嘉
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Abstract

A kind of double-pass symmetric emulated offset proportion photoelectric transducer comprises: modulated light source radiating circuit, coaxial reflective optics, optical receiver, two modular circuits, synchronous signal circuit, 2 amplification output circuits; It is characterized in that: described modulated light source radiating circuit comprises multivibrator and transmitting illuminant, and described transmitting illuminant is the LED luminotron; Described optical receiver is made of the disymmetry silicon photocell; Described modular circuit is made up of ac amplifier circuit, synchro detection circuit, dc amplification circuit; The input end of described ac amplifier circuit connects the output terminal of optical receiver, and the photosignal that the reception optical receiver sends also amplifies, and is input to synchro detection circuit; The output terminal of described synchro detection circuit connects the input end of dc amplification circuit, and described dc amplification circuit outputs to amplification output circuit after the direct current signal of receiving is amplified.The present invention can be widely used in the automatic control system of industries such as packing, printing, weaving, papermaking.

Description

A kind of double-pass symmetric emulated offset proportion photoelectric transducer
Technical field
The present invention relates to photoelectric sensor, a kind of double-pass symmetric emulated offset proportion photoelectric transducer that is specifically related to use the LED technology and adopts two-way symmetric mode analog signal off normal ratio to export.
Background technology
In packing, printing, weaving, need in the automatic control system of industries such as papermaking coiled strip is carried out the operation of photoelectricity automatic deviation correction guiding, and the operation of photoelectricity automatic deviation correction guiding needs photoelectric sensor, photoelectric sensor need be on same plane, discern chromatogram under the non-contacting condition, and by photoelectric sensor non-contact detecting coiled strip edge or lines, and the side-play amount of reading coiled strip physical location and desired location, and convert side-play amount to be directly proportional with it electric signal and export to control system, in the existing photoelectricity automatic deviation correction guidance system, adopt the single analog photoelectric sensor mostly, and single analog photoelectric sensor function singleness, can only follow the tracks of the monitoring of material limit, can not follow the tracks of the track monitoring, cause control accuracy poor; At present, follow the tracks of track correction most employing incandescent lamp or CCD and go to realize that the heat radiation difficulty is easy to generate signal drift in cost height, the continuous working cabinet, influence index, while lamp pearl costliness, maintenance difficult.
Summary of the invention
One of technical matters to be solved by this invention is to provide a kind of double-pass symmetric emulated offset proportion photoelectric transducer that can discern chromatogram at grade and coiled strip is followed the limit, followed line to monitor.
Two of technical matters to be solved by this invention is to provide a kind of double-pass symmetric emulated offset proportion photoelectric transducer thick film integrated circuit
In order to solve the problems of the technologies described above, according to a technical scheme of the present invention, a kind of double-pass symmetric emulated offset proportion photoelectric transducer comprises: modulated light source radiating circuit, coaxial reflective optics, optical receiver, two modular circuits, synchronous signal circuit, 2 amplification output circuits;
Described modulated light source radiating circuit: the emission modulated light signal is given coaxial reflective optics;
Coaxial reflective optics: modulated light signal is focused on, reflexes to controlled flag, and receive the reflected signal of controlled flag reflection, optical receiver is given in focusing again, transmission;
Described optical receiver: receive by the light signal that coaxial reflective optics focuses on, the controlled flag of transmission reflects, and convert light signal to electric signal and be input to two modular circuits;
The output terminal of described synchronous signal circuit connects the input end of modulated light source radiating circuit and the synchronous signal input end of modular circuit simultaneously, and described synchronous signal circuit produces synchronizing signal and outputs to modulated light source radiating circuit and modular circuit;
The output terminal of the input end link block circuit of described amplification output circuit, the analog electrical signal of receiver module circuit output also amplifies back two-way output;
It is characterized in that:
Described modulated light source radiating circuit comprises multivibrator and transmitting illuminant, and described transmitting illuminant DS1 is the LED luminotron;
Described optical receiver is made of the disymmetry silicon photocell;
Described modular circuit is made up of ac amplifier circuit, synchro detection circuit, dc amplification circuit;
The input end of described ac amplifier circuit connects the output terminal of optical receiver, and the photosignal that the reception optical receiver sends also amplifies, and is input to synchro detection circuit;
The input end of described synchro detection circuit connects the ac amplifier circuit output terminal, output terminal connects the input end of dc amplification circuit, the control end of synchro detection circuit connects the output terminal of synchronous signal circuit simultaneously, described synchro detection circuit is controlled by synchronous signal circuit, convert the interchange amplifying signal of receiving to direct current signal, and direct current signal is outputed to dc amplification circuit;
Described dc amplification circuit outputs to amplification output circuit after the direct current signal of receiving is amplified.
According to a preferred version of a kind of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention, described modular circuit is a thick film integrated circuit, can disturb and industrial noise by anti electromagnetic wave.
According to a preferred version of a kind of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention, the ac amplifier circuit of described arbitrary modular circuit is made up of amplification circuit U101A, U101B, capacitor C 101, C102, C107, C108, resistance R 101~R104, R109~R112; Wherein, the inverting input of amplification circuit U101A connects the output terminal of optical receiver by capacitor C 108, the connected node of capacitor C 108 and optical receiver is by resistance R 109 ground connection, be connected between the inverting input and output terminal of amplification circuit U101A after resistance R 111 and capacitor C 107 parallel connections, resistance R 112, R110 is connected in series between power input and the ground, and resistance R 112, the connected node of R110 is connected to the in-phase input end of amplification circuit U101A, the output terminal of amplification circuit U101A is connected to the inverting input of amplification circuit U101B, resistance R 101 by being connected in series simultaneously, R103 ground connection, resistance R 101, the connected node of R103 is connected to the in-phase input end of amplification circuit U101B by capacitor C 101, is connected between the in-phase input end and output terminal of amplification circuit U101B after resistance R 102 and capacitor C 102 parallel connections; The output terminal of amplification circuit U101B connects power input by resistance R 104; Described synchro detection circuit is by capacitor C 103, C104, C105, resistance R 105, R106, R107, triode Q101 forms, capacitor C 103, resistance R 105, R106 is connected in series, one end of capacitor C 103 connects the output terminal of amplification circuit U101B, capacitor C 103, the connected node of resistance R 105 connects the collector of triode Q101, the ground level of triode Q101 connects capacitor C 105 and resistance R 107, the emitter of the other end of resistance R 107 and triode Q101 is ground connection simultaneously, the other end of capacitor C 105 connects synchronous signal circuit, resistance R 105, the connected node of R106 is by capacitor C 104 ground connection, and an end of resistance R 106 connects dc amplification circuit; Described dc amplification circuit is made up of amplification circuit U102A, U102B, capacitor C 106, resistance R 108; Amplification circuit U102A, capacitor C 106, resistance R 108 are formed amplifier; The inverting input of amplification circuit U102A connects an end of resistance R 106, the in-phase input end ground connection of amplification circuit U102A, be connected between the inverting input and output terminal of amplification circuit U102A after capacitor C 106, resistance R 108 parallel connections, the output terminal of amplification circuit U102A connects the in-phase input end of amplification circuit U102B, amplification circuit U102B formation is penetrated a grade follower, the output simulating signal.
According to a preferred version of a kind of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention, described modulated light source radiating circuit is by integrated circuit U2A, resistance R 1, R2, R3, and R13, R14, capacitor C d1, Ca1, transmitting illuminant DS1 form; Wherein, integrated circuit U2A, resistance R 2, R3, R5, R7, electric capacity cd1 form multivibrator, wherein, resistance R 3 is connected between the in-phase input end and output terminal of integrated circuit U2A, resistance R 2 is connected between the inverting input and output terminal of integrated circuit U2A, and the in-phase input end of integrated circuit U2A connects synchronous signal circuit, and the inverting input of integrated circuit U2A is by capacitor C d1 ground connection; The output terminal of integrated circuit U2A connects synchronous signal circuit, and connect the base stage of triode Q1 by resistance R 1, the grounded collector of triode Q1, light source is penetrated in the emitter sending and receiving of triode Q1, the other end of transmitting illuminant connects power supply by resistance R 15, R13, the R14 of coupled in series, and capacitor C a1 is connected between the connected node and ground of resistance R 13, R14.
According to second technical scheme of the present invention, a kind of double-pass symmetric emulated offset proportion photoelectric transducer thick film integrated circuit, be characterized in: the power input that comprises supply power, the 2nd outside terminal of output simulating signal, receive 3 outside terminals of photosignal input, receive the 4th outside terminal of synchronous signal input end, and following circuit is carried out integrated circuit, these circuit comprise: ac amplifier circuit, synchro detection circuit, dc amplification circuit; The photosignal that described ac amplifier circuit reception optical receiver sends also amplifies, be input to synchro detection circuit, the input end of described synchro detection circuit receives the interchange amplifying signal of ac amplifier circuit output, control end receives the synchronizing signal of outer synchronous signal circuit output simultaneously, the interchange amplifying signal that described synchro detection circuit will be received converts direct current signal to and is subjected to synchronizing signal control that direct current signal is outputed to dc amplification circuit, and dc amplification circuit amplifies back output with the direct current signal of receiving.
According to the preferred version of a kind of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention with thick film integrated circuit, described ac amplifier circuit is made up of amplification circuit U101A, U101B, capacitor C 101, C102, C107, C108, resistance R 101~R104, R109~R112; Wherein, the inverting input of amplification circuit U101A connects the 3rd outside terminal by capacitor C 108, and by resistance R 109 ground connection, be connected between the inverting input and output terminal of amplification circuit U101A after resistance R 111 and capacitor C 107 parallel connections, resistance R 112, R110 is connected in series between power input and the ground, and resistance R 112, the connected node of R110 is connected to the in-phase input end of amplification circuit U101A, the output terminal of amplification circuit U101A is connected to the inverting input of amplification circuit U101B, resistance R 101 by being connected in series simultaneously, R103 ground connection, resistance R 101, the connected node of R103 is connected to the in-phase input end of amplification circuit U101B by capacitor C 101, is connected between the in-phase input end and output terminal of amplification circuit U101B after resistance R 102 and capacitor C 102 parallel connections; The output terminal of amplification circuit U101B connects power input by resistance R 104; Described synchro detection circuit is by capacitor C 103, C104, C105, resistance R 105, R106, R107, triode Q101 forms, capacitor C 103, resistance R 105, R106 is connected in series, one end of capacitor C 103 connects the output terminal of amplification circuit U101B, capacitor C 103, the connected node of resistance R 105 connects the collector of triode Q101, the ground level of triode Q101 connects capacitor C 105 and resistance R 107, the emitter of the other end of resistance R 107 and triode Q101 is ground connection simultaneously, the other end of capacitor C 105 connects the 4th outside terminal, resistance R 105, the connected node of R106 is by capacitor C 104 ground connection, and an end of resistance R 106 connects dc amplification circuit; Described dc amplification circuit is made up of amplification circuit U102A, U102B, capacitor C 106, resistance R 108; Amplification circuit U102A, capacitor C 106, resistance R 108 are formed amplifier; The inverting input of amplification circuit U102A connects an end of resistance R 106, the in-phase input end ground connection of amplification circuit U102A, be connected between the inverting input and output terminal of amplification circuit U102A after capacitor C 106, resistance R 108 parallel connections, the output terminal of amplification circuit U102A connects the in-phase input end of amplification circuit U102B, amplification circuit U102B formation is penetrated a grade follower, and the output terminal of amplification circuit U102B connects the 2nd outside terminal.
The beneficial effect of a kind of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention is: adopt cold light source LED to make emissive source, life-span is long, luminescence efficiency is high, low in energy consumption, adopt the disymmetry silicon photocell, precision height, highly sensitive, and export two symmetries, dual analog signal, reach at power that can also and to satisfy output signal symmetry under the requirement consistent, realized the effect of dual analog ratio output.
Adopt thick film integrated circuit, circuit is simple, cost is low, adopts the synchronous detection technology, prevents that external pulse from disturbing, and the reliability height can be widely used in the automatic control system of industries such as packing, printing, weaving, papermaking.
Description of drawings
Fig. 1 is the theory diagram of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention.
Fig. 2 is the circuit theory diagrams of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention.
Fig. 3 is the circuit theory diagrams of modular circuit 1A, 1B among Fig. 1.
Embodiment
Below in conjunction with accompanying drawing the present invention is elaborated.
Referring to Fig. 1 and Fig. 3, a kind of double-pass symmetric emulated offset proportion photoelectric transducer of the present invention, by power circuit, modulated light source radiating circuit 2, coaxial reflective optics 13A, 13B, 13C, 13D, optical receiver 3,2 modular circuit 1A, 1B, synchronous signal circuit 4,2 amplification output circuit 5A, 5B forms, described coaxial reflective optics 13A, 13B, 13C, 13D is by focus lamp 13A, 13B, 13C, half reflection diaphotoscope 13D forms, half reflection diaphotoscope 13D is set to become miter angle with surface level, transmitting illuminant DS1 in the modulated light source radiating circuit 2 is arranged on the top of half reflection diaphotoscope 13D and becomes miter angle with reflection and transmission mirror 13D, focus lamp 13A is arranged between transmitting illuminant DS1 and the half reflection diaphotoscope 13D, and with transmitting illuminant DS1 on same vertical plane, focus lamp 13B is arranged between controlled flag 14 and the half reflection diaphotoscope 13D, and with controlled flag 14 on same surface level, focus lamp 13C is arranged between optical receiver 3 and the half reflection diaphotoscope 13D, and with optical receiver 3 on same surface level, optical receiver 3 is arranged on the transmitted light face of reflection and transmission mirror 13D simultaneously, and with controlled flag 14 on same surface level, described modulated light source radiating circuit 2 emission modulated light signals focus on for the focus lamp 13A in the coaxial reflective optics; By the half reflection diaphotoscope 13D in the coaxial reflective optics modulated light signal is reflexed to the controlled flag 14 of coiled strip again, focus lamp 13B in the coaxial reflective optics receives the reflected signal of controlled flag 14 reflections of coiled strip, give focus lamp 13C by the half reflection diaphotoscope 13D transmission in the coaxial reflective optics again, focus lamp 13C is transmitted to optical receiver 3; Described optical receiver 3 receiving optical signals also convert light signal to electric signal and are input to modular circuit 1A, 1B; The synchronous input end SIN that the output terminal of described synchronous signal circuit 4 is connected simultaneously modulated light source radiating circuit 2 and modular circuit 1A, 1B, the output terminal of described synchronous signal circuit 4 connects the input end of modulated light source radiating circuit 2 and the synchronous signal input end of modular circuit 1A, 1B simultaneously, and described synchronous signal circuit 4 produces synchronizing signal and outputs to modulated light source radiating circuit 2 and modular circuit 1A, 1B; The input end link block circuit 1A of described amplification output circuit 5A, 5B, the output terminal of 1B, the analog electrical signal of receiver module circuit 1A, 1B output also amplifies back two-way output; Described modulated light source radiating circuit 2 is made up of multivibrator and transmitting illuminant DS1, and described transmitting illuminant DS1 is the LED luminotron; Described optical receiver 3 is made of disymmetry silicon photocell E; Described modular circuit 1A, 1B are made up of ac amplifier circuit 6, synchro detection circuit 7, dc amplification circuit 8; The input end of described ac amplifier circuit 6 connects the output terminal of optical receiver 12, and the photosignal that reception optical receiver 3 sends also amplifies, and is input to synchro detection circuit 7; The input end of described synchro detection circuit 7 connects ac amplifier circuit 6 output terminals, output terminal connects the input end of dc amplification circuit 8, the control end of synchro detection circuit 7 connects the output terminal of synchronous signal circuit 4 simultaneously, described synchro detection circuit 7 is subjected to synchronous signal circuit 4 controls, convert the interchange amplifying signal of receiving to direct current signal, and direct current signal is outputed to dc amplification circuit 8; The input end of described amplification output circuit 5A, 5B is the output terminal of link block circuit 1A, 1B respectively, and the analog electrical signal of receiver module circuit 1A, 1B output also amplifies back two-way output; Described modular circuit 1A, 1B adopt thick film integrated circuit.
Referring to Fig. 2, described modulated light source radiating circuit 2 is by integrated circuit U2A, resistance R 1, R2, R3, and R13, R14, R15, capacitor C d1, Ca1, transmitting illuminant DS1 form; Wherein, integrated circuit U2A, resistance R 2, R3, electric capacity cd1 form multivibrator, physical circuit can adopt: resistance R 3 is connected between the in-phase input end and output terminal of integrated circuit U2A, resistance R 2 is connected between the inverting input and output terminal of integrated circuit U2A, the in-phase input end of integrated circuit U2A connects synchronous signal circuit 4, and the inverting input of integrated circuit U2A is by capacitor C d1 ground connection; The output terminal of integrated circuit U2A connects synchronous signal circuit 4, and connect the base stage of triode Q1 by resistance R 1, the grounded collector of triode Q1, light source DS1 is penetrated in the emitter sending and receiving of triode Q1, the other end of transmitting illuminant connects power supply by resistance R 15, R13, the R14 of coupled in series, and capacitor C a1 is connected between the connected node and ground of resistance R 13, R14.Can select integrated circuit U 2A is TL082CD, emission light LED cold light source.
Described synchronous signal circuit 4 is by integrated circuit U2A, resistance R 4, R6, and R8, R5, R7 form; Wherein resistance R 5, R7 are connected in series between power supply and the ground, the connected node of resistance R 5, R7 is connected with the in-phase input end of integrated circuit U2A, wherein resistance R 6, R4 are connected in series between power supply and the ground, the connected node of resistance R 6, R4 is connected with the inverting input of integrated circuit U2B, and the in-phase input end of integrated circuit U2B connects the output terminal of the integrated circuit U2A in the modulated light source radiating circuit 2 by resistance R 8.
Described one of them amplification output circuit 5A is made of resistance R 10, amplification circuit U1A, debugging resistance R K1.
Referring to Fig. 3, the ac amplifier circuit 6 of described arbitrary modular circuit 1A, 1B is made up of amplification circuit U101A, U101B, capacitor C 101, C102, C107, C108, resistance R 101~R104, R109~R112; Wherein, the inverting input of amplification circuit U101A connects the output terminal of optical receiver 3 by capacitor C 108, the connected node of capacitor C 108 and optical receiver 3 is by resistance R 109 ground connection, be connected between the inverting input and output terminal of amplification circuit U101A after resistance R 111 and capacitor C 107 parallel connections, resistance R 112, R110 is connected in series between power input VDD and the ground, and resistance R 112, the connected node of R110 is connected to the in-phase input end of amplification circuit U101A, the output terminal of amplification circuit U101A is connected to the inverting input of amplification circuit U101B, resistance R 101 by being connected in series simultaneously, R103 ground connection, resistance R 101, the connected node of R103 is connected to the in-phase input end of amplification circuit U101B by capacitor C 101, is connected between the in-phase input end and output terminal of amplification circuit U101B after resistance R 102 and capacitor C 102 parallel connections; The output terminal of amplification circuit U101B meets power input VDD by resistance R 104; Described synchro detection circuit 7 is by capacitor C 103, C104, C105, resistance R 105, R106, R107, triode Q101 forms, capacitor C 103, resistance R 105, R106 is connected in series, one end of capacitor C 103 connects the output terminal of amplification circuit U101B, capacitor C 103, the connected node of resistance R 105 connects the collector of triode Q101, the ground level of triode Q101 connects capacitor C 105 and resistance R 107, the emitter of the other end of resistance R 107 and triode Q101 is ground connection simultaneously, the other end of capacitor C 105 connects synchronous signal circuit 4, resistance R 105, the connected node of R106 is by capacitor C 104 ground connection, and an end of resistance R 106 connects dc amplification circuit 8; Described dc amplification circuit 8 is made up of amplification circuit U102A, U102B, capacitor C 106, resistance R 108; Amplification circuit U102A, capacitor C 106, resistance R 108 are formed amplifier; The inverting input of amplification circuit U102A connects an end of resistance R 106, the in-phase input end ground connection of amplification circuit U102A, be connected between the inverting input and output terminal of amplification circuit U102A after capacitor C 106, resistance R 108 parallel connections, the output terminal of amplification circuit U102A connects the in-phase input end of amplification circuit U102B, amplification circuit U102B formation is penetrated a grade follower, the output simulating signal.
Referring to Fig. 3, a kind of double-pass symmetric emulated offset proportion photoelectric transducer thick film integrated circuit, the power input VDD that comprises supply power, the 2nd outside terminal OUT of output simulating signal, receive the 3rd outside terminal IN of photosignal input, receive the 4th outside terminal SIN of synchronous signal input end, and following circuit is carried out integrated circuit, these circuit comprise: ac amplifier circuit 6, synchro detection circuit 7, dc amplification circuit 8; The photosignal that described ac amplifier circuit 6 reception photo detectors send also amplifies, be input to synchro detection circuit 7, the input end of described synchro detection circuit 7 receives the interchange amplifying signal of ac amplifier circuit 6 outputs, the control end of synchro detection circuit 7 receives the synchronizing signal of outer synchronous signal circuit 4 outputs simultaneously, the interchange amplifying signal that described synchro detection circuit 7 will be received converts direct current signal to and is subjected to synchronizing signal control that direct current signal is outputed to dc amplification circuit 8, and dc amplification circuit 8 amplifies back output with the direct current signal of receiving.
Referring to Fig. 3, described ac amplifier circuit 6 is made up of amplification circuit U101A, U101B, capacitor C 101, C102, C107, C108, resistance R 101~R104, R109~R112; Wherein, the inverting input of amplification circuit U101A connects the 3rd outside terminal IN by capacitor C 108, and by resistance R 109 ground connection, be connected between the inverting input and output terminal of amplification circuit U101A after resistance R 111 and capacitor C 107 parallel connections, resistance R 112, R110 is connected in series between power input VDD and the ground, and resistance R 112, the connected node of R110 is connected to the in-phase input end of amplification circuit U101A, the output terminal of amplification circuit U101A is connected to the inverting input of amplification circuit U101B, resistance R 101 by being connected in series simultaneously, R103 ground connection, resistance R 101, the connected node of R103 is connected to the in-phase input end of amplification circuit U101B by capacitor C 101, is connected between the in-phase input end and output terminal of amplification circuit U101B after resistance R 102 and capacitor C 102 parallel connections; The output terminal of amplification circuit U101B meets power input VDD by resistance R 104; Described synchro detection circuit 7 is by capacitor C 103, C104, C105, resistance R 105, R106, R107, triode Q101 forms, capacitor C 103, resistance R 105, R106 is connected in series, one end of capacitor C 103 connects the output terminal of amplification circuit U101B, capacitor C 103, the connected node of resistance R 105 connects the collector of triode Q101, the ground level of triode Q101 connects capacitor C 105 and resistance R 107, the emitter of the other end of resistance R 107 and triode Q101 is ground connection simultaneously, the other end of capacitor C 105 connects the 4th outside terminal SIN, resistance R 105, the connected node of R106 is by capacitor C 104 ground connection, and an end of resistance R 106 connects dc amplification circuit 8; Described dc amplification circuit 8 is made up of amplification circuit U102A, U102B, capacitor C 106, resistance R 108; Amplification circuit U102A, capacitor C 106, resistance R 108 are formed amplifier; The inverting input of amplification circuit U102A connects an end of resistance R 106, the in-phase input end ground connection of amplification circuit U102A, be connected between the inverting input and output terminal of amplification circuit U102A after capacitor C 106, resistance R 108 parallel connections, the output terminal of amplification circuit U102A connects the in-phase input end of amplification circuit U102B, amplification circuit U102B formation is penetrated a grade follower, and the output terminal of amplification circuit U102B connects the 2nd outside terminal OUT.
The principle of work of the described double-pass symmetric emulated offset proportion photoelectric transducer of the embodiment of the invention is: by integrated circuit U2A, resistance R 2, R3, the multivibrator that electric capacity cd1 forms, its vibration promote triode Q1 makes transmitting illuminant DS1 generation light modulated be transmitted to coaxial reflective optics 13A, 13B, 13C, 13D; Modulated light source radiating circuit 2 emission modulated light signals are given coaxial reflective optics 13A, 13B, 13C, 13D; Coaxial reflective optics 13A, 13B, 13C, 13D focus on, reflex to controlled flag 14 with modulated light signal, controlled flag 14 can be tracked track or tracked material limit, and receive the reflected signal that controlled flag 14 is sent, optical receiver 3 is given in focusing again, transmission, and the power of reflected signal changes with the size of hot spot; Optical receiver 3 converts light signal to electric signal and is input to modular circuit 1A, 1B; Modular circuit 1A, 1B exchanges amplification with the photosignal of receiving by AC amplifier, controlled by synchronizing signal, converting the AC signal that receives to direct current signal carries out outputing to amplification output circuit after direct current amplifies again, the two-way direct current signal size of being exported changes along with the power of the light of optical receiver 3 receptions, promptly the size with the side-play amount of coiled strip physical location and desired location changes, form the output of dual analog off normal ratio photosignal, adjust resistance R K1, RK2 can adjust the size of output voltage, promptly regulate output sensitivity, realize the output of two-way balance.

Claims (6)

1, a kind of double-pass symmetric emulated offset proportion photoelectric transducer comprises: modulated light source radiating circuit (2), coaxial reflective optics (13A, 13B, 13C, 13D), optical receiver (3), two modular circuits (1A, 1B), synchronous signal circuit (4), 2 amplification output circuits (5A, 5B);
Described modulated light source radiating circuit (2): the emission modulated light signal is given coaxial reflective optics (13A, 13B, 13C, 13D);
Coaxial reflective optics (13A, 13B, 13C, 13D): modulated light signal is focused on, reflexes to controlled flag (14), and receive the reflected signal of controlled flag (14) reflection, optical receiver (3) is given in focusing again, transmission;
Described optical receiver (3): receive by the light signal that coaxial reflective optics (13A, 13B, 13C, 13D) focuses on, the controlled flag (14) of transmission reflects, and convert light signal to electric signal and be input to two modular circuits (1A, 1B);
The output terminal of described synchronous signal circuit (4) connects the input end of modulated light source radiating circuit (2) and the synchronous signal input end of modular circuit (1A, 1B) simultaneously, and described synchronous signal circuit (4) produces synchronizing signal and outputs to modulated light source radiating circuit (2) and modular circuit (1A, 1B);
The input end of described amplification output circuit (5A, 5B) is the output terminal of link block circuit (1A, 1B) respectively, and the analog electrical signal of receiver module circuit (1A, 1B) output also amplifies back two-way output;
It is characterized in that:
Described modulated light source radiating circuit (2) comprises multivibrator and transmitting illuminant (DS1), and described transmitting illuminant (DS1) is the LED luminotron;
Described optical receiver (3) is disymmetry silicon photocell (E);
Described modular circuit (1A, 1B) is made up of ac amplifier circuit (6), synchro detection circuit (7), dc amplification circuit (8);
The input end of described ac amplifier circuit (6) connects the output terminal of optical receiver (3), and the photosignal that reception optical receiver (3) sends also amplifies, and is input to synchro detection circuit (7);
The input end of described synchro detection circuit (7) connects ac amplifier circuit (6) output terminal, output terminal connects the input end of dc amplification circuit (8), the control end of synchro detection circuit (7) connects the output terminal of synchronous signal circuit (4) simultaneously, described synchro detection circuit (7) is subjected to synchronous signal circuit (4) control, convert the interchange amplifying signal of receiving to direct current signal, and direct current signal is outputed to dc amplification circuit (8);
Described dc amplification circuit (8) outputs to amplification output circuit (5A, 5B) after the direct current signal of receiving is amplified.
2, double-pass symmetric emulated offset proportion photoelectric transducer according to claim 1 is characterized in that: described modular circuit (1A, 1B) is a thick film integrated circuit.
3, double-pass symmetric emulated offset proportion photoelectric transducer according to claim 2 is characterized in that: the ac amplifier circuit (6) of arbitrary described modular circuit (1A, 1B) is made up of amplification circuit U101A, U101B, capacitor C 101, C102, C107, C108, resistance R 101~R104, R109~R112; Wherein, the inverting input of amplification circuit U101A connects the output terminal of optical receiver (3) by capacitor C 108, the connected node of capacitor C 108 and optical receiver (3) is by resistance R 109 ground connection, be connected between the inverting input and output terminal of amplification circuit U101A after resistance R 111 and capacitor C 107 parallel connections, resistance R 112, R110 is connected in series between power input (VDD) and the ground, and resistance R 112, the connected node of R110 is connected to the in-phase input end of amplification circuit U101A, the output terminal of amplification circuit U101A is connected to the inverting input of amplification circuit U101B, resistance R 101 by being connected in series simultaneously, R103 ground connection, resistance R 101, the connected node of R103 is connected to the in-phase input end of amplification circuit U101B by capacitor C 101, is connected between the in-phase input end and output terminal of amplification circuit U101B after resistance R 102 and capacitor C 102 parallel connections; The output terminal of amplification circuit U101B connects power input (VDD) by resistance R 104; Described synchro detection circuit (7) is by capacitor C 103, C104, C105, resistance R 105, R106, R107, triode Q101 forms, capacitor C 103, resistance R 105, R106 is connected in series, one end of capacitor C 103 connects the output terminal of amplification circuit U101B, capacitor C 103, the connected node of resistance R 105 connects the collector of triode Q101, the ground level of triode Q101 connects capacitor C 105 and resistance R 107, the emitter of the other end of resistance R 107 and triode Q101 is ground connection simultaneously, the other end of capacitor C 105 connects synchronous signal circuit (4), resistance R 105, the connected node of R106 is by capacitor C 104 ground connection, and an end of resistance R 106 connects dc amplification circuit (8); Described dc amplification circuit (8) is made up of amplification circuit U102A, U102B, capacitor C 106, resistance R 108; Amplification circuit U102A, capacitor C 106, resistance R 108 are formed amplifier; The inverting input of amplification circuit U102A connects an end of resistance R 106, the in-phase input end ground connection of amplification circuit U102A, be connected between the inverting input and output terminal of amplification circuit U102A after capacitor C 106, resistance R 108 parallel connections, the output terminal of amplification circuit U102A connects the in-phase input end of amplification circuit U102B, amplification circuit U102B formation is penetrated a grade follower, the output simulating signal.
4, double-pass symmetric emulated offset proportion photoelectric transducer according to claim 3, it is characterized in that: described modulated light source radiating circuit (2) is by integrated circuit U2A, resistance R 1, R2, R3, R13, R14, capacitor C d1, Ca1, transmitting illuminant (DS1) are formed; Wherein, resistance R 3 is connected between the in-phase input end and output terminal of integrated circuit U2A, resistance R 2 is connected between the inverting input and output terminal of integrated circuit U2A, the in-phase input end of integrated circuit U2A connects synchronous signal circuit (4), and the inverting input of integrated circuit U2A is by capacitor C d1 ground connection; The output terminal of integrated circuit U2A connects synchronous signal circuit (4), and connect the base stage of triode Q1 by resistance R 1, the grounded collector of triode Q1, light source (DS1) is penetrated in the emitter sending and receiving of triode Q1, the other end of transmitting illuminant connects power supply by resistance R 15, R13, the R14 of coupled in series, and capacitor C a1 is connected between the connected node and ground of resistance R 13, R14.
5, a kind of double-pass symmetric emulated offset proportion photoelectric transducer thick film integrated circuit, it is characterized in that: the power input (VDD) that comprises supply power, the 2nd outside terminal (OUT) of output simulating signal, receive the 3rd outside terminal (IN) of photosignal input, receive the 4th outside terminal (SIN) of synchronous signal input end, and following circuit carried out integrated circuit, these circuit comprise: ac amplifier circuit (6), synchro detection circuit (7), dc amplification circuit (8); The photosignal that described ac amplifier circuit (6) reception optical receiver sends also amplifies, be input to synchro detection circuit (7), the input end of described synchro detection circuit (7) receives the interchange amplifying signal of ac amplifier circuit (6) output, the control end of synchro detection circuit (7) receives the synchronizing signal of outer synchronous signal circuit (4) output simultaneously, the interchange amplifying signal that described synchro detection circuit (7) will be received converts direct current signal to and is subjected to synchronizing signal control that direct current signal is outputed to dc amplification circuit (8), and dc amplification circuit (8) amplifies back output with the direct current signal of receiving.
6, a kind of double-pass symmetric emulated offset proportion photoelectric transducer thick film integrated circuit according to claim 5, it is characterized in that: described ac amplifier circuit (6) is made up of amplification circuit U101A, U101B, capacitor C 101, C102, C107, C108, resistance R 101~R104, R109~R112; Wherein, the inverting input of amplification circuit U101A connects the 3rd outside terminal (IN) by capacitor C 108, and by resistance R 109 ground connection, be connected between the inverting input and output terminal of amplification circuit U101A after resistance R 111 and capacitor C 107 parallel connections, resistance R 112, R110 is connected in series between power input (VDD) and the ground, and resistance R 112, the connected node of R110 is connected to the in-phase input end of amplification circuit U101A, the output terminal of amplification circuit U101A is connected to the inverting input of amplification circuit U101B, resistance R 101 by being connected in series simultaneously, R103 ground connection, resistance R 101, the connected node of R103 is connected to the in-phase input end of amplification circuit U101B by capacitor C 101, is connected between the in-phase input end and output terminal of amplification circuit U101B after resistance R 102 and capacitor C 102 parallel connections; The output terminal of amplification circuit U101B connects power input (VDD) by resistance R 104; Described synchro detection circuit (7) is by capacitor C 103, C104, C105, resistance R 105, R106, R107, triode Q101 forms, capacitor C 103, resistance R 105, R106 is connected in series, one end of capacitor C 103 connects the output terminal of amplification circuit U101B, capacitor C 103, the connected node of resistance R 105 connects the collector of triode Q101, the ground level of triode Q101 connects capacitor C 105 and resistance R 107, the emitter of the other end of resistance R 107 and triode Q101 is ground connection simultaneously, the other end of capacitor C 105 connects the 4th outside terminal (S IN), resistance R 105, the connected node of R106 is by capacitor C 104 ground connection, and an end of resistance R 106 connects dc amplification circuit (8); Described dc amplification circuit (8) is made up of amplification circuit U102A, U102B, capacitor C 106, resistance R 108; Amplification circuit U102A, capacitor C 106, resistance R 108 are formed amplifier; The inverting input of amplification circuit U102A connects an end of resistance R 106, the in-phase input end ground connection of amplification circuit U102A, be connected between the inverting input and output terminal of amplification circuit U102A after capacitor C 106, resistance R 108 parallel connections, the output terminal of amplification circuit U102A connects the in-phase input end of amplification circuit U102B, amplification circuit U102B formation is penetrated a grade follower, and the output terminal of amplification circuit U102B connects the 2nd outside terminal (OUT).
CNB2007100927987A 2007-09-30 2007-09-30 A kind of double-pass symmetric emulated offset proportion photoelectric transducer Expired - Fee Related CN100547356C (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587414A (en) * 1982-06-16 1986-05-06 Betriebsforschungsinstitut Vdeh Institut Fur Angewandte Forschung Gmbh Apparatus for adjusting the position of an edge with surface portions reflecting different wavelengths of light
US4727260A (en) * 1985-03-29 1988-02-23 Erhardt & Leimer Gmbh Photoelectric scanner with light-reflector or light barrier
EP0516913B1 (en) * 1991-02-06 1996-01-03 Valmet Paper Machinery Inc. Method and device for photoelectric identification of a material web
US5932888A (en) * 1995-02-24 1999-08-03 Koenig & Bauer-Albert Aktiengesellschaft Web or sheet edge position measurement process and device
US20030116725A1 (en) * 2001-12-21 2003-06-26 Kimberly-Clark Worldwide, Inc. Web detection with gradient-indexed optics
CN101013023A (en) * 2007-02-12 2007-08-08 西安理工大学 CCD based strip automatic centering CPC detecting system and detecting method
CN201094030Y (en) * 2007-09-30 2008-07-30 沈渝昌 Double analog deflection proportion type photoelectric sensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4587414A (en) * 1982-06-16 1986-05-06 Betriebsforschungsinstitut Vdeh Institut Fur Angewandte Forschung Gmbh Apparatus for adjusting the position of an edge with surface portions reflecting different wavelengths of light
US4727260A (en) * 1985-03-29 1988-02-23 Erhardt & Leimer Gmbh Photoelectric scanner with light-reflector or light barrier
EP0516913B1 (en) * 1991-02-06 1996-01-03 Valmet Paper Machinery Inc. Method and device for photoelectric identification of a material web
US5932888A (en) * 1995-02-24 1999-08-03 Koenig & Bauer-Albert Aktiengesellschaft Web or sheet edge position measurement process and device
US20030116725A1 (en) * 2001-12-21 2003-06-26 Kimberly-Clark Worldwide, Inc. Web detection with gradient-indexed optics
CN101013023A (en) * 2007-02-12 2007-08-08 西安理工大学 CCD based strip automatic centering CPC detecting system and detecting method
CN201094030Y (en) * 2007-09-30 2008-07-30 沈渝昌 Double analog deflection proportion type photoelectric sensor

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