CN100547488C - Immersion optical projection system and method for manufacturing integrated circuit chip - Google Patents

Abstract

An immersion optical projection system and a method for manufacturing an integrated circuit chip. The immersion optical projection system includes: an end lens element; a wafer base for holding a wafer; a transparent plate located between the end lens element and the wafer when the immersion optical projection system is in use. The transparent plate having a lens side surface and a wafer side surface, the immersion optical projection system having a lens side fluid layer between the end lens element and the lens side surface of the transparent plate; and the immersion optical projection system has a wafer-side fluid layer between the wafer-side surface of the transparent plate and the wafer. There is no communication between the wafer-side fluid layer and the lens-side fluid layer, and the lens-side fluid layer may be the same as or different from the wafer-side fluid layer. The invention has less pollution to the lens and still maintains the advantages and functions of the common immersion system.

Description

Immersion optical projection system and method for manufacturing integrated circuit chip

technical field

The present invention relates to an immersion optical projection system for lithography in semiconductor manufacturing.

Background technique

In the semiconductor manufacturing process, the pattern on the mask plate is transferred to the surface of the substrate or wafer through a lithography process. In the known lithography process, a resist layer (usually a polymer material whose properties can be changed after light irradiation) needs to be formed on an intermediate structure. The desired pattern is projected onto the resist layer by passing through a series of mirrors and reticles within an optical projection system. These lenses reduce the size of the projected image. The image reduction caused by the lens changes according to the design criteria. For example, the general image reduction is about 4-5 times. When the pattern on the mask plate is projected onto the resist layer on the wafer to generate exposure, the acidity of the resist layer in the exposed area will change. And when the resist is developed, part of the resist is removed to form a patterned resist layer.

Projecting sharp and precise patterns with minimal dimensions on the wafer is often limited by the wavelength of the light source used. For example, in current lithography systems using deep ultraviolet light with a wavelength of about 248 nm to 193 nm, patterns with feature sizes ranging from 130 nm to 90 nm can usually be formed. In order to extend the feature size formed by 193nm lithography to 0.45nm or below, fluid immersion lithography was derived. In this way, optical properties with numerical apertures greater than 1 can be obtained.

FIG. 1 is a simplified schematic diagram illustrating a known immersion optical projection system (immersion optical projection system) 10 for lithography. The immersive optical projection system 10 shown in FIG. 1 is also sometimes referred to as a shower configuration. In this system, fluid 12 is continuously circulated to eliminate damage caused by thermal energy. As shown in the immersion optical projection system 10 of FIG. 1 , a circulating fluid 12 is located between an end lens element 22 and a wafer 24 during the lithography process. In the immersion lens 26 for the immersion optical projection system 10 of FIG. In the typical wafer chuck 28 shown in FIG. 1 , it holds the wafer 24 by the vacuum force supplied by the vacuum channel 30 and the vacuum line 32 . The fluid 12 is confined by the capillary phenomenon, thereby maintaining a fluid thickness of about 1-2 millimeters (mm). Additionally, other vacuum channels and/or air pressure means (not shown) may be used in the outer region of the immersion lens 26 to further confine this fluid. The fluid used in the immersion optical projection system 10 is typically ultra-pure deionized water, which has a refractive index higher than that of the air bubbles typically interposed between the lens and the wafer surface. In addition, other additives or dopants can also be added to water to increase its refractive index.

In such a fluid immersion system, it is generally preferable to use a fluid with high reflectivity and low absorption properties, and it is not expected that the fluid absorbs particles from the wafer. However, when using the system 10 shown in FIG. Such dust particles will be carried to the surface of the end lens element 22 . This will result in contamination of the wafer, which eventually requires lens replacement, which is extremely expensive. Therefore, there is a need for an immersion optical projection system suitable for the lithography process, which has less lens contamination and can still maintain the advantages and functions of the immersion system.

Contents of the invention

In view of this, the main purpose of the present invention is to provide an immersion optical projection system suitable for lithography process and a manufacturing method of integrated circuit chips, which can have less lens contamination and still maintain general Advantages and functions of immersion systems.

In order to achieve the above object, according to an embodiment of the present invention, the present invention provides an immersion optical projection system, which is suitable for lithography process, comprising: an end lens element; a wafer base for holding a wafer; a transparent plate seated between the end lens element and the wafer when the immersive optical projection system is in use. The transparent plate has a lens-side surface and a wafer-side surface, the immersion optical projection system may have a lens-side fluid layer between the end lens element and the lens-side surface of the transparent plate; and the immersion The optical projection system may have a wafer-side fluid layer located between the wafer-side surface of the transparent plate and the wafer, wherein the lens-side fluid layer and the wafer-side fluid layer have different wetting properties. In one embodiment, there is no communication between the wafer-side fluid layer and the lens-side fluid layer. In one embodiment, the lens side fluid layer is different from the wafer side fluid layer. In one embodiment, the fluid velocity of the wafer-side fluid layer is different from the flow rate of the lens-side fluid layer.

In the immersive optical projection system of the present invention, the transparent plate is adhered to the end lens element, and the lens-side fluid layer is located between the end lens element and the transparent plate and is stationary.

The immersion optical projection system of the present invention further includes: a lens side fluid inlet adjacent to the end lens element when the immersion optical projection system is in use, the lens side fluid inlet allowing a lens side fluid to flow through the transparent between a plate and the end lens element to form at least part of the lens side flow fluid layer; and a lens side fluid outlet adjacent to the end lens element when the immersive optical projection system is in use, the lens side fluid outlet may A portion of the fluid flow flowing between the transparent plate and the end lens element is received to form at least a portion of the lens side flow fluid layer.

The immersion optical projection system of the present invention includes: a wafer-side fluid inlet located in the wafer base, the wafer-side fluid inlet can allow a wafer-side fluid to flow through the transparent plate and the wafer between, to form the wafer side flow fluid layer; and a wafer side fluid outlet, located in the wafer base, the wafer side fluid outlet can receive the flow from between the transparent plate and the wafer fluid to form a flowing fluid layer on the wafer side.

The immersive optical projection system of the present invention further includes a carrier for moving the transparent plate, wherein the carrier includes two or three arms pivotally coupled to each other.

According to another object of the present invention, the present invention provides an immersion optical projection system suitable for lithography processes, comprising: an end lens element; a transparent plate adhered to the end lens element; a stationary side of the lens a fluid layer between the end lens element and the transparent plate; a wafer base for holding a wafer; and a wafer-side flowing fluid layer between the transparent plate and the wafer, The static fluid layer on the lens side and the flowing fluid layer on the wafer side have different wetting characteristics.

The immersion optical projection system of the present invention further includes: a fluid inlet adjacent to the end lens element when the immersion optical projection system is in use, the fluid inlet allows a fluid to flow between the transparent plate and the wafer , to form at least part of the wafer side flow fluid layer; and a fluid outlet, adjacent to the end lens element when the immersion optical projection system is in use, the fluid outlet can receive flow between the transparent plate and the wafer The portion of the fluid in between to form at least a portion of the wafer side flowing fluid layer.

According to another object of the present invention, the present invention provides a method of manufacturing an integrated circuit chip, comprising the following steps: arranging an end lens element on a wafer, wherein a transparent glass element is arranged between the end lens element and the wafer plate, the transparent plate has a lens-side surface and a wafer-side surface; a lithography process is performed on the wafer; when the lithography process is performed, a lens-side fluid is formed between the end lens element and the transparent plate between the side surfaces of the lens; and when performing the lithography process, a wafer side fluid is formed between the wafer side surface of the transparent plate and the wafer, wherein there is a fluid between the lens side fluid and the wafer side fluid different wetting properties.

In the manufacturing method of the integrated circuit chip described in the present invention, the fluid on the lens side is static while the fluid on the wafer side is flowing during the lithography process.

In the manufacturing method of the integrated circuit chip described in the present invention, the fluid on the lens side is flowing while the fluid on the wafer side is still when the lithography process is carried out.

In the method for manufacturing an integrated circuit chip according to the present invention, when performing the lithography process, the lens-side fluid has a lens-side fluid velocity, the wafer-side fluid has a wafer-side fluid velocity, and the lens-side fluid velocity different from the wafer side fluid velocity.

Description of drawings

FIG. 1 is a simplified schematic diagram illustrating a known immersive optical projection system for lithography;

FIG. 2 is a simplified schematic diagram illustrating an immersive optical projection system for lithography according to a first embodiment of the present invention;

FIG. 3 is a simplified schematic diagram illustrating an immersive optical projection system for lithography according to a second embodiment of the present invention;

4 is a simplified schematic diagram for illustrating an immersive optical projection system for lithography process according to a third embodiment of the present invention;

Fig. 5 is a simplified schematic diagram for explaining the structure for placing and moving the protective transparent plate in the system of the third embodiment; and

6A-6C are a series of top views showing several different carriers for protecting the transparent plate.

Detailed ways

In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment will be described in detail below together with the accompanying drawings.

Embodiments of the present invention will be described in detail with the following figures, wherein the same reference numerals used in different figures represent the same or similar components in different embodiments of the present invention. The following drawings are not drawn according to actual size, and for the purpose of illustration, the drawing representations in some embodiments will be simplified. Those skilled in the art should know that the present invention can have different applications and changes based on the spirit of the following embodiments.

Embodiments of the present invention provide an immersive optical projection system for semiconductor device manufacturing processes. Figure 2 shows a first illustrative embodiment of the invention. Figure 3 shows a second illustrative embodiment of the invention. 4-6C show a third illustrative embodiment according to the present invention. The above three illustrative embodiments will be based on the implementation of a lithography process for semiconductor manufacturing to illustrate the different features and advantages of the present invention. It should be noted that in each embodiment described below, different features can be mixed or used in combination in other embodiments of the present invention. In addition, it is also worth noting that the scope and features described or discussed in one embodiment do not necessarily apply to another embodiment of the present invention, but in most cases, those skilled in the art should benefit from this Invention disclosed technology.

FIG. 2 is a simplified schematic diagram showing an immersive optical projection system 20 according to a first embodiment of the present invention, which is suitable for lithography process. In the immersive optical projection system 20 of FIG. 2 , the immersive lens 26 includes an end lens element 22 and a protective transparent plate 34 . In FIG. 2 , the immersion lens 26 is seated on the wafer 24 during the lithography process, and the protective transparent plate 34 is seated between the end lens element 22 and the wafer 24 . The protective transparent plate 34 has a lens side surface 36 and a wafer side surface 38 . During the lithography process, a lens-side fluid layer 40 is formed between the end lens element 22 and the lens-side surface 36 of the protective transparent plate 34 , as shown in FIG. 2 . The lens side fluid layer 40 has a lens side fluid velocity equal to zero or greater than zero. In addition, in the first embodiment, a wafer-side fluid layer 42 is formed between the wafer-side surface 38 of the protective transparent plate 34 and the wafer 24, which has a wafer-side fluid layer 42 that is the same as or different from the lens-side fluid velocity. Velocity, this wafer side fluid velocity can be 0 or greater than 0.

In the first embodiment, fluid inlets 44 , 46 and fluid outlets 48 , 50 are located adjacent end lens element 22 . The lens-side fluid inlet 44 provides the fluid forming the lens-side fluid layer 40, so that the fluid of the lens-side fluid layer 40 flows between the end lens element 22 and the protective transparent plate 34, and at least part of the fluid of the lens-side fluid layer 40 Received by fluid outlet 48 on the lens side. The wafer-side fluid inlet 46 provides the fluid forming the wafer-side fluid layer 42 such that the fluid of the wafer-side fluid layer 42 flows between the transparent plate 34 and the wafer 24 . In the first embodiment, the fluid of the lens-side fluid layer is preferably not fluidly connected to the fluid of the wafer-side fluid layer 42, so as to avoid the fluid coming from the wafer-side fluid 42 (such as from the resist material of the wafer 24). above) the fine dust contamination propagates to the end lens element 22. Instead of replacing the end lens element 22, the protective transparent plate 34 will be replaced when it becomes contaminated with particles. Thus, one of the advantages of the present invention is that the replacement of the protective transparent plate 34 is economical and simple compared to the replacement of the end lens element 22 . In a preferred embodiment, due to the use of the protective transparent plate, it can be easily removed and replaced. However, in some embodiments, the protective transparent plate 34 may be permanently adhered to other components and may or may not be easily removed.

In other embodiments, the lens-side fluid layer 40 may be fluidly coupled to the wafer-side fluid layer 42 via some place in the system. In such cases, the wafer-side fluid layer 42 is preferably filtered before being added to the lens-side fluid stream 40 . However, for some reason two different fluids 40, 42 will still be used. For example, the surface properties (eg, wetting angle) of the resist surface on the wafer 24 may be different from that of the lens surface. Therefore, it is possible to add different additives to the fluids of the respective fluid layers 40 and 42 to meet the wetting characteristics of the lens and the wafer surface. Therefore, the fluid of the lens-side fluid layer 40 may have different wetting characteristics than the fluid of the wafer-side fluid layer 42 . The fluid of the lens side fluid layer 40 may include one or more additives such that the lens side fluid wetting characteristics of the lens side fluid layer 40 more closely match the wetting characteristics of the end lens element 22 rather than the wetting characteristics of the wafer 24 . Likewise, the wafer-side fluid layer 42 may also include one or more additives such that the wafer-side fluid wetting characteristics of the wafer-side fluid layer 42 more closely match the wetting characteristics of the wafer rather than the wetting of the end lens element 22. characteristic.

Another reason is that due to the use of two different fluids in the two fluid layers 40, 42 in the system 20, different refractive indices are preferably available. For example, the fluid 40 of the lens side fluid layer may have a refractive index closer to the end lens element 22 than closer to the wafer 24 and/or protective transparent plate 34 . Therefore, the fluids of the wafer-side fluid layer 42 preferably have different refractive indices. Furthermore, when the fluid of the lens-side fluid layer 40 is not fluidly connected to the fluid of the wafer-side fluid layer 42, compared with the fluid of the wafer-side fluid layer 42, the fluid 40 of the lens-side fluid layer will not contact The wafer 24, therefore, the fluid 40 of the lens-side fluid layer is not limited to a low-absorbency fluid.

In the immersion optical projection system 20 of the present invention with the protective transparent plate 34, all spaces between the end lens elements 22, the protective transparent plate 34 and the wafer 24 (at least along the pattern projection path) are preferably fluid (such as high refractive index intermediates) filled. In a preferred embodiment of the present invention, the protective transparent plate 34 and its two sides are immersed in the fluid layers 40 , 42 . When there are gaps or air bubbles in any space along the projection path, the high spatial frequency from the reticle pattern to the lens may not be consistent with resist characteristics. The fluid layers 40 , 42 on each side of the protective transparent plate 34 also reduce the reliance on the extremely high optical quality of the protective transparent plate 34 . Since the protective transparent plate 34 is also an optical element arranged along the projection path, and is an extremely low-deviation system, the protective transparent plate 34 needs to consider its surface flatness (surface flatness) and smoothness precisely for the components of light wavelengths. (smoothness), parallelism (parallelism), displacement (placement) and positioning (orientation) and so on. However, in one embodiment of the present invention, when the lens side fluid layer 40 closely matches the refractive index of the end lens element 22, the aforementioned optical properties need not be maintained. In a practical application, even if the refractive index of the lens-side fluid layer 40 and the end lens element 22 can be matched, since the refractive index is more consistent than that in the presence of air, the aforementioned optical quality has a general tolerance. For example, in the wavelength setting of 193 nm, when the protective transparent plate 34 is made of quartz and the fluid on the lens side is water, the difference in refractive index is about 1.55-1.44=0.11. By comparison, the difference in refractive index in a dry system (air gap) is about 1.55-1.00=0.55. Thus, approximately five times the tolerance.

Preferably, the material of the protective transparent plate 34 is transparent to actinic light, which has a transmission rate of about 80% or higher. Therefore, the protective transparent plate is preferably transparent (>80% transmittance) for the wavelengths of light used in the immersive optical projection system 20 . For example, system 20 in an embodiment may utilize light having a wavelength of about 436 nm, about 365 nm, about 248 nm, about 193 nm, or less. For example, the protective transparent plate 34 may comprise any suitable material, including (but not limited to): quartz, fused silica, calcium fluoride (CaF ₂ ), lithium fluoride (LiF ₂ ). , magnesium fluoride (MgF ₂ ) and compositions thereof. The refractive index of the protective transparent plate 34 is preferably the same as or higher than the refractive index of the fluid layers 40 , 42 . For example, the fluid layers 40, 42 preferably have a refractive index of about 1.3 or higher. In one embodiment, water (eg, ultrapure water, deionized water) is a preferred fluid because its refractive index is greater than that of air (ie, greater than 1). In one embodiment, impurities and/or additives may be added to the water to change specific properties of the fluid layers 40 , 42 . However, in other embodiments, these factors and criteria will vary.

For example, protective transparent panel 34 may be generally flat, partially curved, curved, or a combination thereof. Another advantage of embodiments of the present invention is that the lens-side surface 36 of the protective transparent plate 34 may be different from the wafer-side surface 38 thereof. Since the lens surface characteristic of the end lens element 22 has a lens wetting characteristic, the wafer surface characteristic of the wafer 24 has a wafer wetting characteristic. Therefore, in one embodiment, the lens-side surface 36 of the protective transparent plate 34 has a lens-side surface characteristic that is different from the wafer-side surface characteristic of the wafer-side surface 38 of the protective transparent plate 34 . The lens side surface characteristic of the lens side surface 36 has a lens side surface wetting characteristic that is closer to the lens wetting characteristic provided by the lens surface characteristic than the wafer side surface characteristic. Likewise, the wafer-side surface property of the wafer-side surface 38 has a wafer-side surface wetting property that is closer to the lens-wetting property provided by the wafer-side surface property than the lens-side surface property. Thus, the surfaces 36, 38 of the protective transparent plate 34 can be individually modified or tailored to match (or more closely approximate without modification) the surface wetting characteristics of the resist and the lens.

In an embodiment of the present invention, the lens-side fluid layer 40 located between the end lens element 22 and the protective transparent plate 34 may be in a flowing, static or other state. Likewise, the wafer-side fluid layer 42 located between the protective transparent plate 34 and the wafer 24 may be in a static, flowing or other state. In the aforementioned first embodiment, during the lithography process, the lens-side fluid layer 40 and the wafer-side fluid layer 42 are preferably in a flowing state, although they can also be in a static state or other states between static and flowing.

FIG. 3 is a simplified schematic diagram illustrating an immersive optical projection system 20 for lithography according to a second embodiment of the present invention. In the second embodiment, the lens-side fluid 40 is in a static state, while the wafer-side fluid 42 is in a flowing state. Lens side fluid 40 may be hermetically sealed between protective transparent plate 34 and end lens element 22 . At this point, the protective transparent plate 34 is adhered to the end lens element 22 . In other words, the protective transparent plate 34 is stationary relative to the end lens element 22 during normal use of the immersive optical projection system 20 . Although the protective transparent plate is adhered to the end lens element 22, since it is all adhered to the immersion lens 26, it can also be adhered indirectly to the end lens element 22 (for example, the protective transparent plate is adhered via other components of the immersion lens 26. And at the end lens element 22).

In one embodiment of the present invention, when the immersion optical projection system 20 is in use, when the end lens element 22 moves toward the wafer 24, the immersion lens 26, the end lens element 22, the wafer 24, the wafer base 28 or its combination, the protective transparent plate 34 is stationary. For example, in the aforementioned first and second embodiments (please refer to FIGS. 2 and 3 ), when the end lens element 22 moves corresponding to the wafer 24, the protection is transparent relative to the immersion lens 26 and the end lens element 22. Plate 34 remains stationary.

FIG. 4 is a simplified schematic diagram illustrating an immersive optical projection system 20 for lithography according to a third embodiment of the present invention. In the third embodiment, the protective transparent plate 34 is stationary with respect to the wafer 24 and the wafer base 28 as the end lens element 22 moves toward the wafer 24 . A protective transparent plate 34 is removably adhered to the wafer base 28 to allow movement and removal of the wafer 24 . A wafer-side fluid inlet 46 and an outlet 50 are disposed in the wafer base 28 so that the fluid of the wafer-side fluid layer 42 flows between the protective transparent layer 34 and the wafer 24 . A lens-side fluid inlet 44 and an outlet 48 are provided adjacent to the end lens element 22 in the immersion lens for supplying fluid from the lens-side fluid layer 40 .

FIG. 5 shows a flat carrier 54 seated on the protective transparent plate 34 . The protective transparent plate 34 can lie flat on the carrier 54 and thus be recovered from the wafer base 28 for the carrier 54 . For example, in a preferred embodiment, the protective transparent plate 34 can be lifted and stored by the vacuum force inside the carrier 54 . In addition, in the lithography process, the transparent protective plate 34 can also be held by the vacuum force in the wafer base 28

After holding the transparent protective plate 34 , the carrier 54 can be paused at a simple position in the exposure system 20 . In such cases, the lithography process preferably needs to minimize the location for parking the carrier 54 . In order to reduce the space in the parking place, the carrier 54 may have any shape. 6A-6C show top views of various possible examples of carriers 54 . In FIG. 6A , the carrier 54 has a ring shape, which includes a vacuum groove and/or a plurality of vacuum holes distributed along the annular portion 56 of the carrier 54 . In FIG. 6B , the carrier 54 has a cross shape. The longitudinal arm 58 in FIG. 6B is pivotably coupled to the transverse arm 60 so that the transverse arm 60 can be folded towards the longitudinal arm 58 when not in use. Figure 6C shows another example. In FIG. 6C , the carrier 54 has a fork shape with two pivotally coupled side arms 62 . The side arms 62 can be folded toward the central arm 64 to provide a more compact folded structure to save space. Those skilled in the art should know that the carrier 54 may have other shapes, which are not limited to the scope of the present invention.

Although the present invention has been described above through preferred embodiments, the preferred embodiments are not intended to limit the present invention. Those skilled in the art should be able to make various changes and supplements to the preferred embodiment without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention is subject to the scope of the claims.

A brief description of the symbols in the drawings is as follows:

10, 20: Immersion optical projection system 40: Fluid layer on the lens side

12: Circulating fluid 42: Wafer side fluid layer

14: Fluid inlet 44: Fluid inlet on lens side

16: Fluid outlet 46: Wafer side fluid inlet

22: End lens element 48: Lens side fluid outlet

24: Wafer 50: Wafer side fluid outlet

28: Wafer base 54: Carrier

30: Vacuum channel 56: Annular part of the vehicle

32: Vacuum line 58: Longitudinal arm

34: Transparent protective plate 60: Horizontal arm

36: Lens side surface of the transparent protective plate 62: Side arm

38: Wafer side surface of transparent protective plate 64: Central arm

Claims (11)

1. An immersion optical projection system, suitable for lithography process, including: an end lens element; a wafer base for holding a wafer; a transparent plate seated between the end lens element and the wafer when the immersive optical projection system is in use, wherein the transparent plate has a lens side surface and a wafer side surface; the immersive optical projection system has a lens-side fluid layer between the terminal lens element and the lens-side surface of the transparent plate; and The immersion optical projection system has a wafer-side fluid layer located between the wafer-side surface of the transparent plate and the wafer, wherein the lens-side fluid layer and the wafer-side fluid layer have different wetting properties . 2. The immersive optical projection system according to claim 1, wherein the transparent plate is adhered to the end lens element, the lens side fluid layer is located between the end lens element and the transparent plate, and is still. 3. The immersive optical projection system according to claim 1, further comprising: a lens side fluid inlet adjacent to the end lens element when the immersive optical projection system is in use, the lens side fluid inlet enabling a lens side fluid to flow between the transparent plate and the end lens element to form at least a partial the lens side flow fluid layer; and a lens-side fluid outlet adjacent to the end lens element when the immersive optical projection system is in use, the lens-side fluid outlet receiving a portion of the fluid flow between the transparent plate and the end lens element to form at least a partial Lens side flow fluid layer. 4. The immersive optical projection system according to claim 1, comprising: a wafer-side fluid inlet located in the wafer pedestal, the wafer-side fluid inlet allows a wafer-side fluid to flow between the transparent plate and the wafer to form the wafer-side fluid layer; as well as A wafer-side fluid outlet is located in the wafer base, and the wafer-side fluid outlet can receive the flowing fluid from between the transparent plate and the wafer to form a flowing fluid layer on the wafer side. 5. The immersive optical projection system according to claim 1, further comprising a carrier for moving the transparent plate, wherein the carrier includes two or three arms pivotally coupled to each other. 6. An immersion optical projection system, suitable for lithography process, comprising: an end lens element; a transparent plate adhered to the end lens element; a lens side static fluid layer between the end lens element and the transparent plate; a wafer base for holding a wafer; and A flowing fluid layer on the wafer side is located between the transparent plate and the wafer, wherein the static fluid layer on the lens side and the flowing fluid layer on the wafer side have different wetting properties. 7. The immersive optical projection system according to claim 6, further comprising: a fluid inlet, adjacent to the end lens element when the immersive optical projection system is in use, the fluid inlet allows a fluid to flow between the transparent plate and the wafer to form at least part of a flowing fluid layer on the side of the wafer ;as well as a fluid outlet, adjacent to the end lens element when the immersion optical projection system is in use, the fluid outlet can receive the portion of the fluid flowing between the transparent plate and the wafer to form at least part of the wafer side fluid layer. 8. A method for manufacturing an integrated circuit chip, comprising the following steps: disposing an end lens element on a wafer, wherein a transparent plate is disposed between the end lens element and the wafer, the transparent plate has a lens side surface and a wafer side surface; performing a lithography process on the wafer; forming a lens-side fluid between the terminal lens element and the lens-side surface of the transparent plate while performing the lithography process; and When performing the lithography process, a wafer-side fluid is formed between the wafer-side surface of the transparent plate and the wafer, wherein the lens-side fluid and the wafer-side fluid have different wetting characteristics. 9. The method of manufacturing an integrated circuit chip according to claim 8, wherein the fluid on the lens side is static while the fluid on the wafer side is flowing during the lithography process. 10. The method of manufacturing an integrated circuit chip according to claim 8, wherein the fluid on the lens side is flowing while the fluid on the wafer side is still when the lithography process is performed. 11. The method of manufacturing an integrated circuit chip according to claim 8, wherein when performing the lithography process, the lens-side fluid has a lens-side fluid velocity, and the wafer-side fluid has a wafer-side fluid velocity The lens-side fluid velocity is different from the wafer-side fluid velocity.

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