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CN100585820C - Packaging method and packaging structure of light emitting diode with high-efficiency light emitting effect - Google Patents

Packaging method and packaging structure of light emitting diode with high-efficiency light emitting effect Download PDF

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Publication number
CN100585820C
CN100585820C CN200710106136A CN200710106136A CN100585820C CN 100585820 C CN100585820 C CN 100585820C CN 200710106136 A CN200710106136 A CN 200710106136A CN 200710106136 A CN200710106136 A CN 200710106136A CN 100585820 C CN100585820 C CN 100585820C
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Prior art keywords
light
emitting diode
effect according
luminous effect
unit
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CN101312133A (en
Inventor
汪秉龙
庄峰辉
吴文逵
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Harvatek Corp
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Harvatek Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a light emitting diode packaging structure, which comprises: a substrate unit , a light-emitting unit (light-emitting unit), and a package colloid unit (package colloid unit). The substrate unit has a substrate body (substrate body), and a positive electrode conductive trace (positive electrode trace) and a negative electrode conductive trace (negative electrode trace) formed on the substrate body, respectively. The light emitting unit has a plurality of light emitting diode chips (LED chips) disposed on the substrate body, wherein each LED chip has a positive electrode end (positive electrode side) and a negative electrode end (negative electrode side) electrically connected to the positive and negative electrode conductive traces of the substrate unit, respectively. The encapsulant unit has a plurality of encapsulant (packages) respectively covering the led chips.

Description

The LED encapsulation method and the encapsulating structure thereof of tool high efficiency light-emitting effect
Technical field
The present invention relates to a kind of method for packing and encapsulating structure thereof of light-emitting diode chip for backlight unit, refer to a kind of LED encapsulation method and encapsulating structure thereof of tool high efficiency light-emitting effect especially.
Background technology
See also shown in Figure 1ly, it is the flow chart of first kind of method for packing of known light-emitting diode.By in the flow chart as can be known, first kind of method for packing of known light-emitting diode, its step comprises: at first, provide light-emitting diode (packaged LED) that a plurality of encapsulation finish (S800); Then, provide a strip substrate body (stripped substrate body), have a positive conductive traces (positive electrodetrace) and a negative pole conductive traces (negative electrode trace) on it (S802); At last, the light-emitting diode that each encapsulation is finished (packaged LED) is arranged on this strip substrate body in regular turn, and the positive and negative positive and negative electrode conductive traces (S804) that extremely is electrically connected at this strip substrate body respectively of the light-emitting diode (packaged LED) that each encapsulation is finished.
See also shown in Figure 2ly, it is the flow chart of second kind of method for packing of known light-emitting diode.By in the flow chart as can be known, second kind of method for packing of known light-emitting diode, its step comprises: at first, one strip substrate body (stripped substrate body) is provided, has a positive conductive traces (positiveelectrode trace) and a negative pole conductive traces (negative electrode trace) on it (S900); Then, in regular turn a plurality of light-emitting diode chip for backlight unit (LED chip) are arranged on this strip substrate body, and with the positive and negative positive and negative electrode conductive traces (S902) that extremely is electrically connected at this strip substrate body respectively of each light-emitting diode chip for backlight unit; At last, (stripped package colloid) is covered on this strip substrate body and these light-emitting diode chip for backlight unit with a strip packing colloid, to form an optical wand (light bar) that has a strip light-emitting zone (stripped light-emitting area) (S904).
Yet, first kind of method for packing about above-mentioned known light-emitting diode, because the light-emitting diode (packaged LED) that each encapsulation is finished must cut down from a monoblock LED package earlier, and then with surface mount technology (SMT) operation, the light-emitting diode (packagedLED) that each encapsulation is finished is arranged on this strip substrate body, therefore can't effectively shorten its activity time, moreover, when luminous, have blanking bar (dark band) phenomenon between the light-emitting diode that these encapsulation are finished (packaged LED) and exist, still produce not good effect for user's sight line.
In addition, about second kind of method for packing of above-mentioned known light-emitting diode, because the optical wand of being finished has the strip light-emitting zone, therefore second kind of method for packing will can not produce the problem of blanking bar (dark band).Yet, because the zone that this strip packing colloid (stripped package colloid) is excited is uneven, thereby the optical efficiency that causes optical wand not good (that is, can produce stronger excitation source near the packing colloid of light-emitting diode chip for backlight unit zone, then produce more weak excitation source) away from the packing colloid zone of light-emitting diode chip for backlight unit.
As from the foregoing, known light emitter diode seal method and encapsulating structure thereof obviously has inconvenience and exists with disappearance, and wait to be improved at present.
Therefore, can the improving of the above-mentioned disappearance of inventor's thoughts, and according to the correlation experience of being engaged in for many years in this respect, the concentrated observation and research, and cooperate the utilization of scientific principle, and propose a kind of reasonable in design and effectively improve the present invention of above-mentioned disappearance.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of LED encapsulation method and encapsulating structure thereof of tool high efficiency light-emitting effect.Light emitting diode construction of the present invention is when luminous, form a continuous light-emitting zone, and the situation of not having brightness disproportionation takes place, and the present invention adopts through chip and directly encapsulates (ChipOn Board, COB) operation and utilize the mode of pressing mold (die mold), so that the present invention can shorten its activity time effectively, and can produce in a large number.Moreover structural design of the present invention more is applicable to various light sources, such as application such as backlight module, Decorating lamp strip, illuminator lamp or scanner light sources, is all applied scope of the present invention and product.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present invention, a kind of light emitter diode seal method of tool high efficiency light-emitting effect is provided, it comprises the following steps: at first, one base board unit (substrate unit) is provided, and it has a substrate body (substrate body), reaches the positive conductive traces (positive electrode trace) and a negative pole conductive traces (negative electrode trace) that are formed at respectively on this substrate body; Then, see through the mode of matrix (matrix), a plurality of light-emitting diode chip for backlight unit (LED chip) are set respectively on this substrate body, to form many vertical light-emitting diode chip for backlight unit rows of row (longitudinal LED chip row), wherein each light-emitting diode chip for backlight unit has a positive terminal (positive electrode side) and a negative pole end (negative electrode side) of the positive and negative electrode conductive traces that is electrically connected at this base board unit respectively; Then, see through one first die unit (first mold unit), will many strip packing colloids (stripped package colloid) respectively longitudinally (longitudinally) cover each and arrange vertical light-emitting diode chip for backlight unit and arrange on (longitudinal LED chip row).
At last, the present invention has three kinds of follow-up enforcement aspects:
First kind of aspect: between per two vertical light-emitting diode chip for backlight unit, laterally (transversely) cuts these strip packing colloids (stripped package colloid) and this substrate body, to form many optical wands (light bar), wherein each bar optical wand has a plurality of packing colloids (package colloid) that are covered in apart from each other on each light-emitting diode chip for backlight unit.
Second kind of aspect: between per two vertical light-emitting diode chip for backlight unit, laterally (transversely) cuts these strip packing colloids (stripped package colloid), to form a plurality of packing colloids (package colloid) that are covered in apart from each other on each light-emitting diode chip for backlight unit; Then, see through one second die unit (second mold unit), be covered in a frame unit (frame unit) on this substrate body and be filled between these packing colloids; At last, between per two vertical light-emitting diode chip for backlight unit, laterally (transversely) cuts this frame unit and this substrate body, forming many optical wands (light bar), and make this frame unit be cut into a plurality of coat respectively all packing colloids on each bar optical wand around ccf layers.
The third aspect: between per two vertical light-emitting diode chip for backlight unit, laterally (transversely) cuts these strip packing colloids (stripped package colloid), to form a plurality of packing colloids (package colloid) that are covered in apart from each other on each light-emitting diode chip for backlight unit; Then, see through one the 3rd die unit (third mold unit), be covered in many strip ccf layers (stripped frame layer) on this substrate body and longitudinally be filled between each packing colloid; At last, between per two vertical light-emitting diode chip for backlight unit, laterally (transversely) cuts these strip framework layers (strippedframe layer) and this substrate body, forming many optical wands (light bar), and make these strip framework layers (stripped frame layer) be cut into a plurality of frameworks (frame body) that coat respectively around each packing colloid.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present invention, a kind of package structure for LED of tool high efficiency light-emitting effect is provided, and it comprises: a base board unit (substrate unit), a luminescence unit (light-emitting unit), an and packing colloid unit (package colloid unit).
Wherein, this base board unit has a substrate body (substrate body), reaches the positive conductive traces (positive electrode trace) and a negative pole conductive traces (negative electrode trace) that are formed at respectively on this substrate body.This luminescence unit has a plurality of light-emitting diode chip for backlight unit (LED chip) that are arranged on this substrate body, and wherein each light-emitting diode chip for backlight unit has a positive terminal (positive electrode side) and a negative pole end (negative electrode side) of the positive and negative electrode conductive traces that is electrically connected at this base board unit respectively.This packing colloid unit has a plurality of packing colloids (package colloid) that are covered in respectively on these light-emitting diode chip for backlight unit.
In addition, LED encapsulation construction of the present invention can further comprise two kinds of structures of example down:
First kind: a frame unit (frame unit), it is covered on this substrate body for one deck and coats each packing colloid ccf layer (frame layer) all around, to expose the upper surface of each packing colloid.
Second kind: a frame unit (frame unit), it has a plurality of frameworks (frame body) that center on these packing colloids respectively, to expose the upper surface of each packing colloid respectively, wherein these frameworks are that ground separated from one another (separately) is arranged on this substrate body.
Therefore, light emitting diode construction of the present invention forms a continuous light-emitting zone when luminous, and does not have the situation generation of brightness disproportionation.And the present invention adopt to see through chip and encapsulates directly that (Chip On Board, COB) operation and utilize the mode of pressing mold (die mold) so that the present invention can shorten its activity time effectively, and can be produced in a large number.
Reach technology, means and the effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet the accompanying drawing that is provided only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the flow chart of first kind of method for packing of known light-emitting diode;
Fig. 2 is the flow chart of second kind of method for packing of known light-emitting diode;
Fig. 3 is the flow chart of first embodiment of method for packing of the present invention;
Fig. 3 a to Fig. 3 d is respectively the encapsulation flow process schematic perspective view of first embodiment of encapsulating structure of the present invention;
Fig. 3 A to Fig. 3 D is respectively the encapsulation flow process generalized section of first embodiment of encapsulating structure of the present invention;
Fig. 4 reaches the schematic diagram of electric connection for light-emitting diode chip for backlight unit of the present invention sees through the mode of covering crystalline substance (flip-chip);
Fig. 5 is the flow chart of second embodiment of method for packing of the present invention;
Fig. 5 a to Fig. 5 c is respectively the part encapsulation flow process schematic perspective view of second embodiment of encapsulating structure of the present invention;
Fig. 5 A to Fig. 5 C is respectively the part encapsulation flow process generalized section of second embodiment of encapsulating structure of the present invention;
Fig. 6 is the flow chart of the 3rd embodiment of method for packing of the present invention;
Fig. 6 a to Fig. 6 b is respectively the part encapsulation flow process schematic perspective view of the 3rd embodiment of encapsulating structure of the present invention; And
Fig. 6 A to Fig. 6 B is respectively the part encapsulation flow process generalized section of the 3rd embodiment of encapsulating structure of the present invention.
Wherein, Reference numeral is:
Base board unit 1 substrate body 10
Positive conductive traces 11
Negative pole conductive traces 12
This base board unit 1 ' positive conductive traces 11 '
Negative pole conductive traces 12 '
Vertically light-emitting diode chip for backlight unit is arranged 2 light-emitting diode chip for backlight unit 20
Positive terminal 201
Negative pole end 202
Light-emitting diode chip for backlight unit 20 '
Positive terminal 201 '
Negative pole end 202 '
Strip packing colloid 3 packing colloids 30
Packing colloid 30 '
Frame unit 4 ccf layers 40
Strip framework layer 4 ' framework 40 '
Lead W
Tin ball B
The first die unit M1, the first mold M11
First passage M110
The first bed die M12
The second die unit M2, the second mold M21
Second channel M210
The second bed die M22
The 3rd die unit M3 the 3rd mold M31
Third channel M310
The 3rd bed die M32
Optical wand L1
Optical wand L2
Optical wand L3
Embodiment
See also Fig. 3, Fig. 3 a to Fig. 3 d, reach shown in Fig. 3 A to Fig. 3 D.Fig. 3 is the flow chart of first embodiment of method for packing of the present invention, Fig. 3 a to Fig. 3 d is respectively the encapsulation schematic flow sheet of first embodiment of encapsulating structure of the present invention, and Fig. 3 A to Fig. 3 D is respectively the encapsulation flow process generalized section of first embodiment of encapsulating structure of the present invention.By the flow chart of Fig. 3 as can be known, the first embodiment of the present invention provides a kind of method for packing of light-emitting diode of tool high efficiency light-emitting effect, and it comprises the following steps:
At first, please cooperate shown in Fig. 3 a and Fig. 3 A, one base board unit (substrate unit) 1 is provided, and it has a substrate body (substrate body) 10, reaches a plurality of positive conductive traces (positive electrode trace) 11 and a plurality of negative pole conductive traces (negativeelectrode trace) 12 (S100) that are formed at respectively on this substrate body 10.Wherein, according to different design requirements, this base board unit 10 can be a printed circuit board (PCB) (PCB), a soft base plate (flexible substrate), an aluminium base (aluminumsubstrate), a ceramic substrate (ceramic substrate) or a copper base (copper substrate).In addition, this positive and negative electrode conductive traces 11,12 can adopt aluminum steel road (aluminum circuit) or silver-colored circuit (silver circuit), and the layout (layout) of this positive and negative electrode conductive traces 11,12 can change to some extent along with different needs.
Then, please cooperate shown in Fig. 3 b and Fig. 3 B, see through the mode of matrix (matrix), a plurality of light-emitting diode chip for backlight unit (LED chip) 20 are set respectively on this substrate body 10, to form the vertical light-emitting diode chip for backlight unit row of many rows (longitudinal LED chip row) 2, wherein each light-emitting diode chip for backlight unit 20 has a positive terminal (positive electrode side) 201 and one negative pole end (negative electrode side) 202 (S102) of the positive and negative electrode conductive traces 11,12 that is electrically connected at this base board unit respectively.
In addition, with the first embodiment of the present invention, each light-emitting diode chip for backlight unit 20 positive and negative extreme the 201, the 202nd sees through two corresponding lead W and in the mode of routing (wire-bounding), produces with the positive and negative electrode conductive traces 11,12 with this base board unit 1 to electrically connect.Moreover, each arranges vertical light-emitting diode chip for backlight unit row (longitudinal LED chip row) the 2nd, be arranged on the substrate body 10 of this base board unit 1 with the arrangement mode of a straight line, and each light-emitting diode chip for backlight unit 20 can be a blue led chips (blue LED).
Certainly, the electric connection mode of above-mentioned these light-emitting diode chip for backlight unit 20 is not in order to limit the present invention, for example: see also (light-emitting diode chip for backlight unit of the present invention sees through the mode of covering crystalline substance and reaches the schematic diagram of electric connection) shown in Figure 4, each light-emitting diode chip for backlight unit 20 ' positive and negative extreme 201 ', 202 ' be to see through a plurality of corresponding tin ball B and covering the mode of crystalline substance (flip-chip), with this base board unit 1 ' positive and negative electrode conductive traces 11 ', 12 ' produce and electrically connect.In addition, according to different design requirements, these light-emitting diode chip for backlight unit (figure do not show) positive and negative extremely be can connect (parallel), mode that (serial) in parallel or series connection add parallel connection (parallel/serial), produce with positive and negative electrode conductive traces and to electrically connect with this base board unit (figure does not show).
Then, please cooperate shown in Fig. 3 c and Fig. 3 C, see through one first die unit (first mold unit) M1, will many strip packing colloids (stripped package colloid) 3 respectively longitudinally (longitudinally) cover each and arrange vertical light-emitting diode chip for backlight unit and arrange on (the longitudinal LED chiprow) 2 (S104).
Wherein, this first die unit M 1 is made up of first bed die (the first lower mold) M 12 that one first mold (first upper mold) M 11 and is used to carry this substrate body 10, and this first mold M 11 is first passage (first channel) M 110 with many corresponding these vertical light-emitting diode chip for backlight unit row (longitudinal LED chip row) 2.
In addition, the height of these first passages M110 and width are identical with the height and the width of these strip packing colloids (strippedpackage colloid) 3.Moreover, each bar strip packing colloid (strippedpackage colloid) 3 can be according to different user demands, and are chosen as: mixed the fluorescent colloid (fluorescent resin) that forms with a fluorescent material (fluorescent powder) or mixed the fluorescent colloid (fluorescent resin) that forms by an epoxy resin (epoxy) with a fluorescent material (fluorescent powder) by a silica gel (silicon).
At last, please consult Fig. 3 c again, and cooperate shown in Fig. 3 d and Fig. 3 D, between per two vertical light-emitting diode chip for backlight unit 20, laterally (transversely) cuts these strip packing colloids (strippedpackage colloid) 3 and this substrate body 10, to form many optical wands (light bar) L1, wherein each bar optical wand L1 has a plurality of packing colloid (package colloid) 30 (S106) that are covered in apart from each other on each light-emitting diode chip for backlight unit 20.
See also Fig. 5, Fig. 5 a to Fig. 5 c, reach shown in Fig. 5 A to Fig. 5 C.Fig. 5 is the flow chart of second embodiment of method for packing of the present invention, Fig. 5 a to Fig. 5 c is respectively the part encapsulation schematic flow sheet of second embodiment of encapsulating structure of the present invention, and Fig. 5 A to Fig. 5 C is respectively the part encapsulation flow process generalized section of second embodiment of encapsulating structure of the present invention.By the flow chart of Fig. 5 as can be known, the step S200 to S204 of second embodiment step S100 to S104 with first embodiment respectively is identical.That is step S200 is equal to Fig. 3 a of first embodiment and the schematic view illustrating of Fig. 3 A; Step S202 is equal to Fig. 3 b of first embodiment and the schematic view illustrating of Fig. 3 B; Step S204 is equal to Fig. 3 c of first embodiment and the schematic view illustrating of Fig. 3 C.
Moreover, after step S204, the second embodiment of the present invention further comprises: at first, see also shown in Fig. 5 a and Fig. 5 A, between per two vertical light-emitting diode chip for backlight unit 20, laterally (transversely) cuts these strip packing colloids (stripped package colloid) 3, to form a plurality of packing colloids (package colloid) 30 ' (S206) that are covered in apart from each other on each light-emitting diode chip for backlight unit 20.
Then, see also shown in Fig. 5 b and Fig. 5 B, see through one second die unit (second mold unit) M2, be covered in a frame unit (frame unit) 4 on this substrate body 10 and be filled in these packing colloids 30 ' between (S208).Wherein, this second die unit M2 is made up of second bed die (second lowermold) M22 that one second mold (secondupper mold) M21 and is used to carry this substrate body 10, and this second mold M21 has second channel (second channel) M210 of corresponding this frame unit 4, in addition the height of this second channel M210 and these packing colloids (package colloid) 30 ' height identical, and the width of this second channel M210 is identical with the width of this frame unit 4.
At last, please consult Fig. 5 b again, and cooperate shown in Fig. 5 c and Fig. 5 C, between per two vertical light-emitting diode chip for backlight unit 20, laterally (transversely) cuts this frame unit 4 and this substrate body 10, forming many optical wands (light bar) L2, and make this frame unit 4 be cut into a plurality of coat respectively all packing colloids 30 on each bar optical wand L2 ' around ccf layer 40 (S210).Wherein, these ccf layers 40 can be light tight ccf layer (opaque frame layer), for example: white box rack-layer (white frame layer).
See also Fig. 6, Fig. 6 a Fig. 6 b, reach shown in Fig. 6 A to Fig. 6 B.Fig. 6 is the flow chart of the 3rd embodiment of method for packing of the present invention, Fig. 6 a to Fig. 6 b is respectively the part encapsulation schematic flow sheet of the 3rd embodiment of encapsulating structure of the present invention, and Fig. 6 A to Fig. 6 B is respectively the part encapsulation flow process generalized section of the 3rd embodiment of encapsulating structure of the present invention.By the flow chart of Fig. 6 as can be known, the step S300 to S304 of the 3rd embodiment step S100 to S104 with first embodiment respectively is identical, and the step S306 of the 3rd embodiment the step S206 with second embodiment is identical respectively.That is step S300 is equal to Fig. 3 a of first embodiment and the schematic view illustrating of Fig. 3 A; Step S302 is equal to Fig. 3 b of first embodiment and the schematic view illustrating of Fig. 3 B; Step S304 is equal to Fig. 3 c of first embodiment and the schematic view illustrating of Fig. 3 C; Step S306 is equal to Fig. 5 a of second embodiment and the schematic view illustrating of Fig. 5 A.
Moreover, after step S306, the third embodiment of the present invention further comprises: at first, see also shown in Fig. 6 a and Fig. 6 A, see through one the 3rd die unit (third mold unit) M3, with many strip ccf layers (stripped frame layer) 4 ' be covered on this substrate body 10 and longitudinally be filled in each packing colloid 30 ' between (S308).
Wherein, the 3rd die unit M3 is made up of the 3rd bed die (the third lower mold) M32 that one the 3rd mold (third uppermold) M31 and is used to carry this substrate body 10, and the 3rd mold M31 has third channel (third channel) M310 of many corresponding these vertical light-emitting diode chip for backlight unit row (longitudinalLED chip row) 2, and the height of this third channel M310 be with these packing colloids (package colloid) 30 ' height identical, and the width of this third channel M310 greater than each packing colloid 30 ' width.
At last, please consult Fig. 6 a again, and cooperate shown in Fig. 6 b and Fig. 6 B, between per two vertical light-emitting diode chip for backlight unit 20, laterally (transversely) cuts these strip framework layers (stripped framelayer) 4 ' and this substrate body 10, forming many optical wands (light bar) L 3, and make a plurality of frameworks (frame body) 40 ' (S310) that coat each packing colloid 30 ' all around respectively of these strip framework layers (stripped frame layer) 4 ' be cut into.Wherein, these frameworks 40 ' can be light tight framework (opaque frame body), for example: white framework (white frame body).
In sum, light emitting diode construction of the present invention is when luminous, form a continuous light-emitting zone, and the situation of not having brightness disproportionation takes place, and the present invention adopts through chip and directly encapsulates (Chip On Board, COB) operation and utilize the mode of pressing mold (die mold), so that the present invention can shorten its activity time effectively, and can produce in a large number, moreover, structural design of the present invention more is applicable to various light sources, such as backlight module, Decorating lamp strip, illuminator lamp, or application such as scanner light source, be all applied scope of the present invention and product.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range of the appended claim of the present invention.

Claims (35)

1、一种具高效率发光效果的发光二极管封装方法，其特征在于，包括下列步骤：1. A light-emitting diode packaging method with high-efficiency luminous effect, characterized in that it comprises the following steps: 提供一基板单元，其具有一基板本体、及分别形成于该基板本体上的一正极导电轨迹与一负极导电轨迹；A substrate unit is provided, which has a substrate body, and a positive conductive track and a negative conductive track respectively formed on the substrate body; 通过矩阵的方式，分别设置多个发光二极管芯片于该基板本体上，以形成多排纵向发光二极管芯片排，其中每一个发光二极管芯片具有分别电性连接于该基板单元的正、负极导电轨迹的一正极端与一负极端；以及A plurality of light-emitting diode chips are arranged on the substrate body in a matrix manner to form multiple rows of vertical light-emitting diode chip rows, wherein each light-emitting diode chip has a positive and negative conductive track electrically connected to the substrate unit respectively. a positive extreme and a negative extreme; and 通过一第一模具单元，将多条条状封装胶体纵向地分别覆盖在每一排纵向发光二极管芯片排上；以及Through a first mold unit, a plurality of strips of encapsulant are vertically covered on each row of vertical light-emitting diode chip rows; and 沿着每两个纵向发光二极管芯片之间，横向地切割所述条状封装胶体，Cutting the strip-shaped encapsulant laterally along between every two vertical light-emitting diode chips, 所述纵向与所述正极导电轨迹与所述负极导电轨迹的排列方向垂直。The longitudinal direction is perpendicular to the arrangement direction of the positive conductive track and the negative conductive track. 2、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，该基板单元为一印刷电路板。2. The LED packaging method with high-efficiency luminous effect according to claim 1, wherein the substrate unit is a printed circuit board. 3、根据权利要求2所述的具高效率发光效果的发光二极管封装方法，其特征在于，该印刷电路板为一软基板、一铝基板、一陶瓷基板、或一铜基板。3. The LED packaging method with high-efficiency luminous effect according to claim 2, wherein the printed circuit board is a flexible substrate, an aluminum substrate, a ceramic substrate, or a copper substrate. 4、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，该正、负极导电轨迹为铝线路或银线路。4. The LED packaging method with high-efficiency luminous effect according to claim 1, wherein the positive and negative conductive tracks are aluminum or silver lines. 5、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，每一个发光二极管芯片的正、负极端是通过两相对应的导线并以打线的方式，以与该基板单元的正、负极导电轨迹产生电性连接。5. The LED packaging method with high-efficiency luminous effect according to claim 1, characterized in that, the positive and negative ends of each LED chip are connected to each other through two corresponding wires and wired. The positive and negative conductive traces of the substrate unit are electrically connected. 6、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，每一个发光二极管芯片的正、负极端是通过多个相对应的锡球并以倒装芯片的方式，以与该基板单元的正、负极导电轨迹产生电性连接。6. The LED packaging method with high-efficiency luminous effect according to claim 1, characterized in that the positive and negative ends of each LED chip pass through a plurality of corresponding solder balls and are flip-chip , so as to be electrically connected to the positive and negative conductive traces of the substrate unit. 7、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，每一排纵向发光二极管芯片排是以一直线的排列方式设置于该基板单元的基板本体上。7. The LED packaging method with high-efficiency luminous effect according to claim 1, wherein each row of vertical LED chips is arranged in a straight line on the substrate body of the substrate unit. 8、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，该第一模具单元是由一第一上模具及一用于承载该基板本体的第一下模具所组成，并且该第一上模具是具有多条相对应该纵向发光二极管芯片排的第一沟槽，此外该第一沟槽的高度及宽度是与该条状封装胶体的高度及宽度相同。8. The LED packaging method with high-efficiency luminous effect according to claim 1, wherein the first mold unit is composed of a first upper mold and a first lower mold for carrying the substrate body composition, and the first upper mold has a plurality of first grooves corresponding to the vertical LED chip rows, and the height and width of the first grooves are the same as the height and width of the strip-shaped encapsulant. 9、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，每一条条状封装胶体为由硅胶与荧光粉所混合形成的荧光胶体。9. The LED packaging method with high-efficiency luminous effect according to claim 1, wherein each strip of packaging colloid is a fluorescent colloid formed by mixing silica gel and phosphor powder. 10、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，每一条条状封装胶体为由环氧树脂与荧光粉所混合形成的荧光胶体。10. The LED packaging method with high-efficiency luminous effect according to claim 1, wherein each strip of packaging colloid is a fluorescent colloid formed by mixing epoxy resin and phosphor powder. 11、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，更进一步包括：沿着每两个纵向发光二极管芯片之间，横向地切割该条状封装胶体及该基板本体，以形成多条光棒，其中每一条光棒具有多个彼此分开地覆盖于每一个发光二极管芯片上的封装胶体，所述横向与所述正极导电轨迹与所述负极导电轨迹的排列方向平行。11. The LED packaging method with high-efficiency luminous effect according to claim 1, further comprising: cutting the strip-shaped encapsulant and the strip laterally between each two vertical LED chips the substrate body to form a plurality of optical rods, wherein each optical rod has a plurality of encapsulants covering each light emitting diode chip separately from each other, the horizontal direction and the arrangement of the positive conductive track and the negative conductive track direction parallel. 12、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，更进一步包括：12. The LED packaging method with high-efficiency luminous effect according to claim 1, further comprising: 沿着每两个纵向发光二极管芯片之间，横向地切割该条状封装胶体，以形成多个彼此分开地覆盖于每一个发光二极管芯片上的封装胶体；Cutting the strip-shaped encapsulant laterally along between every two vertical LED chips to form a plurality of encapsulants that are separated from each other and cover each LED chip; 通过一第二模具单元，将一框架单元覆盖于该基板本体上并且填充于该封装胶体之间；以及A frame unit is covered on the substrate body and filled between the encapsulants through a second mold unit; and 沿着每两个纵向发光二极管芯片之间，横向地切割该框架单元及该基板本体，以形成多条光棒，并且使得该框架单元被切割成多个分别包覆每一条光棒上的所有封装胶体的四周的框架层。Cut the frame unit and the substrate body laterally along between every two vertical light emitting diode chips to form a plurality of light bars, and make the frame unit be cut into a plurality of light bars that respectively cover all the light bars. The surrounding frame layer of encapsulation colloid. 13、根据权利要求12所述的具高效率发光效果的发光二极管封装方法，其特征在于，该第二模具单元是由一第二上模具及一用于承载该基板本体的第二下模具所组成，并且该第二上模具具有一条相对应该框架单元的第二沟槽，此外该第二沟槽的高度与该封装胶体的高度相同，而该第二沟槽的宽度与该框架层的宽度相同。13. The LED packaging method with high-efficiency luminous effect according to claim 12, wherein the second mold unit is composed of a second upper mold and a second lower mold for carrying the substrate body composition, and the second upper mold has a second groove corresponding to the frame unit, and the height of the second groove is the same as the height of the encapsulant, and the width of the second groove is the same as the width of the frame layer same. 14、根据权利要求12所述的具高效率发光效果的发光二极管封装方法，其特征在于，该框架层为不透光框架层。14. The LED packaging method with high-efficiency luminous effect according to claim 12, wherein the frame layer is an opaque frame layer. 15、根据权利要求14所述的具高效率发光效果的发光二极管封装方法，其特征在于，该不透光框架层为白色框架层。15. The LED packaging method with high-efficiency luminous effect according to claim 14, wherein the opaque frame layer is a white frame layer. 16、根据权利要求1所述的具高效率发光效果的发光二极管封装方法，其特征在于，更进一步包括：16. The LED packaging method with high-efficiency luminous effect according to claim 1, further comprising: 沿着每两个纵向发光二极管芯片之间，横向地切割该条状封装胶体后，以形成多个彼此分开地覆盖于每一个发光二极管芯片上的封装胶体；Cutting the strip-shaped encapsulant laterally along between every two vertical LED chips to form a plurality of encapsulants that are separated from each other and cover each LED chip; 通过一第三模具单元，将多条条状框架层覆盖于该基板本体上并且纵向地填充于每一个封装胶体之间；以及Using a third mold unit, covering the substrate body with a plurality of strip-shaped frame layers and filling longitudinally between each encapsulant; and 沿着每两个纵向发光二极管芯片之间，横向地切割该条状框架层及该基板本体，以形成多条光棒，并且使得该条状框架层被切割成多个分别包覆每一个封装胶体四周的框体。Cut the strip-shaped frame layer and the substrate body laterally along between every two vertical light-emitting diode chips to form a plurality of light bars, and make the strip-shaped frame layer be cut into a plurality of wrapping each package respectively The frame around the colloid. 17、根据权利要求16所述的具高效率发光效果的发光二极管封装方法，其特征在于，该第三模具单元是由一第三上模具及一用于承载该基板本体的第三下模具所组成，并且该第三上模具具有多条相对应该纵向发光二极管芯片排的第三沟槽，并且该第三沟槽的高度与该封装胶体的高度相同，而该第三沟槽的宽度大于每一个封装胶体的宽度。17. The LED packaging method with high-efficiency luminous effect according to claim 16, wherein the third mold unit is composed of a third upper mold and a third lower mold for carrying the substrate body Composition, and the third upper mold has a plurality of third grooves corresponding to the vertical light emitting diode chip row, and the height of the third grooves is the same as the height of the encapsulant, and the width of the third grooves is larger than each The width of one encapsulant. 18、根据权利要求16所述的具高效率发光效果的发光二极管封装方法，其特征在于，该框体为不透光框体。18. The LED packaging method with high-efficiency luminous effect according to claim 16, wherein the frame body is an opaque frame body. 19、根据权利要求18所述的具高效率发光效果的发光二极管封装方法，其特征在于，该不透光框体为白色框体。19. The LED packaging method with high-efficiency luminous effect according to claim 18, wherein the opaque frame is a white frame. 20、一种具高效率发光效果的发光二极管封装结构，其特征在于，包括：20. A light-emitting diode packaging structure with high-efficiency luminous effect, characterized in that it includes: 一基板单元，其具有一基板本体、及分别形成于该基板本体上的一正极导电轨迹与一负极导电轨迹；A substrate unit, which has a substrate body, and a positive conductive track and a negative conductive track respectively formed on the substrate body; 一发光单元，其具有多个通过芯片直接封装而直接设置于该基板本体上的纵向排列的发光二极管芯片，其中每一个发光二极管芯片具有分别电性连接于该基板单元的正、负极导电轨迹的一正极端与一负极端；以及A light emitting unit, which has a plurality of longitudinally arranged light emitting diode chips directly arranged on the substrate body through direct chip packaging, wherein each light emitting diode chip is electrically connected to the positive and negative conductive traces of the substrate unit respectively a positive extreme and a negative extreme; and 一封装胶体单元，其具有多个分别覆盖于该发光二极管芯片上的封装胶体，an encapsulation unit, which has a plurality of encapsulations respectively covering the light-emitting diode chip, 所述纵向与所述正极导电轨迹与所述负极导电轨迹的排列方向垂直。The longitudinal direction is perpendicular to the arrangement direction of the positive conductive track and the negative conductive track. 21、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，该基板单元为一印刷电路板。21. The LED packaging structure with high-efficiency luminous effect according to claim 20, wherein the substrate unit is a printed circuit board. 22、根据权利要求21所述的具高效率发光效果的发光二极管封装结构，其特征在于，该印刷电路板为一软基板、一铝基板、一陶瓷基板、或一铜基板。22. The LED packaging structure with high-efficiency luminous effect according to claim 21, wherein the printed circuit board is a flexible substrate, an aluminum substrate, a ceramic substrate, or a copper substrate. 23、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，该正、负极导电轨迹为铝线路或银线路。23. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, wherein the positive and negative conductive tracks are aluminum lines or silver lines. 24、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，每一个发光二极管芯片的正、负极端是通过两相对应的导线并以打线的方式，以与该正、负极导电轨迹产生电性连接。24. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, characterized in that, the positive and negative ends of each light-emitting diode chip are connected to each other through two corresponding wires and wired. The positive and negative conductive traces are electrically connected. 25、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，每一个发光二极管芯片的正、负极端是通过多个相对应的锡球并以倒装芯片的方式，以与该正、负极导电轨迹产生电性连接。25. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, characterized in that the positive and negative terminals of each light-emitting diode chip pass through a plurality of corresponding solder balls and are flip-chip , so as to be electrically connected with the positive and negative conductive traces. 26、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，该发光二极管芯片是以一直线的排列方式设置于该基板单元的基板本体上。26. The light-emitting diode package structure with high-efficiency luminous effect according to claim 20, wherein the light-emitting diode chips are disposed on the substrate body of the substrate unit in a straight line arrangement. 27、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，该发光二极管芯片是以多条直线的排列方式设置于该基板单元的基板本体上。27. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, wherein the light-emitting diode chips are disposed on the substrate body of the substrate unit in a manner of arranging a plurality of straight lines. 28、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，每一个封装胶体为由硅胶与荧光粉所混合形成的荧光胶体。28. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, wherein each packaging colloid is a fluorescent colloid formed by mixing silica gel and phosphor powder. 29、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，每一个封装胶体为由环氧树脂与荧光粉所混合形成的荧光胶体。29. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, wherein each packaging colloid is a fluorescent colloid formed by mixing epoxy resin and phosphor powder. 30、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，更进一步包括：一框架单元，其为一层覆盖于该基板本体上及包覆每一个封装胶体四周的框架层，以露出每一个封装胶体的上表面。30. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, further comprising: a frame unit, which is a layer covering the substrate body and wrapping around each encapsulant frame layer to expose the upper surface of each encapsulant. 31、根据权利要求30所述的具高效率发光效果的发光二极管封装结构，其特征在于，该框架层为不透光框架层。31. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 30, wherein the frame layer is an opaque frame layer. 32、根据权利要求31所述的具高效率发光效果的发光二极管封装结构，其特征在于，该不透光框架层为白色框架层。32. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 31, wherein the light-tight frame layer is a white frame layer. 33、根据权利要求20所述的具高效率发光效果的发光二极管封装结构，其特征在于，更进一步包括：一框架单元，其具有多个分别围绕该封装胶体的框体，以分别露出每一个封装胶体的上表面，其中该框体是彼此分离地设置于该基板本体上。33. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 20, further comprising: a frame unit, which has a plurality of frames respectively surrounding the encapsulant to expose each The upper surface of the encapsulant, wherein the frames are separately disposed on the substrate body. 34、根据权利要求33所述的具高效率发光效果的发光二极管封装结构，其特征在于，该框体为不透光框体。34. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 33, wherein the frame body is an opaque frame body. 35、根据权利要求34所述的具高效率发光效果的发光二极管封装结构，其特征在于，该不透光框体为白色框体。35. The light-emitting diode packaging structure with high-efficiency luminous effect according to claim 34, wherein the opaque frame is a white frame.
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