CN100594592C - thin film transistor manufacturing method and substrate structure - Google Patents
thin film transistor manufacturing method and substrate structure Download PDFInfo
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- CN100594592C CN100594592C CN200510117613A CN200510117613A CN100594592C CN 100594592 C CN100594592 C CN 100594592C CN 200510117613 A CN200510117613 A CN 200510117613A CN 200510117613 A CN200510117613 A CN 200510117613A CN 100594592 C CN100594592 C CN 100594592C
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Abstract
本发明公开了一种薄膜晶体管制造方法及基板结构，其中基板结构具有一基材及一自我对位光罩。该制造方法是通过将自我对位光罩制作在基材上，使其具有与基材同步热胀冷缩的特性，当提供一曝光源在基材非用以形成薄膜晶体管的一侧时，自我对位光罩可克服塑料基板非等距膨胀收缩而产生的偏位问题，且具有高准度的对位效果，因此可以准确的定义出薄膜晶体管源极及漏极位置。
The present invention discloses a thin film transistor manufacturing method and substrate structure, wherein the substrate structure has a substrate and a self-aligning mask. The manufacturing method is to manufacture the self-aligning mask on the substrate so that it has the characteristics of synchronous thermal expansion and contraction with the substrate. When an exposure source is provided on the side of the substrate that is not used to form the thin film transistor, the self-aligning mask can overcome the offset problem caused by the non-equidistant expansion and contraction of the plastic substrate, and has a high-precision alignment effect, so that the source and drain positions of the thin film transistor can be accurately defined.
Description
Technical field
The present invention relates to a kind of method for fabricating thin film transistor and board structure, it is particularly related to a kind of method and board structure of making thin-film transistor that be applied in.
Background technology
In recent years, personal computer is used widely, adds popularizing of network, on big degree very, has changed traditional reading habit of human unusable paper.Display is connected personal computer with display after successfully developing, and then directly by on the display, shows the information frame that personal computer is exported, and has become the important way of human reading information.Yet people's reading habit is permanent accumulation to form, so paper remains a kind of important carrier that diffuses information.Along with the maturation of display technology, the display of lighter, thinner, portability, deflection, for example electronic paper has just attracted global numerous investors' concern, and many companies also add among the technological development ranks of this " paper revolution " one after another.
OTFT (Organic Thin Film Transistor; OTFT) be to utilize organic molecule material to develop the thin-film transistor that is fit to be applied to electronic product, the transistor component that when panel is crooked, makes with organic molecule material, its characteristic still can remain unchanged, and can reach normal image display quality effect, therefore bendable electronic product, for example realization of flexible display have been quickened.Again because plastic base has characteristic transparent, light, thin, shock-resistant, deflection, and be applicable to the high production rate technology of roller bearing to roller bearing (Roll to Roll) spray printing platform, so OTFT is produced on the plastic base, application on flexible display or logic module will be the gesture of driving of following main flow.Yet in the technology of plastic base, except the permeable oxygen permeability of substrate itself need be improved, in the process of making thin-film transistor, can be through the immersion and the high-temperature technology of solvent, and cause the phenomenon of substrate size unstability contraposition accurately, problems such as reduction that will improve the degree of difficulty in the manufacturing process and cause yield like this.
As shown in Figure 1, be for an existing OTFT, use the allocation plan of plastic base as base material.In order to improve the usefulness of production, therefore in the production technology of thin-film transistor, can be on large-area plastic base, produce a large amount of thin-film transistors simultaneously, this moment is for the control and the management of technology, again can be with large-area plastic base, be distinguished into some blocks, for example be numbered ..., P02, P03 ..., P05, P06 ... Deng block, each block is divided into most unit again then, P06 block for example, can further divide into again numbering A0 ..., A8 ..., G0 ..., unit such as G8.In the technology each time, all can provide a contraposition district 92 again, examine benchmark with the product of contraposition when making.
As shown in Figure 2, be an existing plastic base, in film crystal technology, produce base material because of being heated and stretch inconsistent contrast figure.With the P06 block is example, wherein number the unit of A0, A8, G0 and G8, lay respectively at four corners of this P06 block, observation by virtual level and vertical auxiliary corresponding line, can find, after plastic base was heated, these four unit had produced the inconsistent shift phenomenon of tangible stretching, extension, and it vertically reaches horizontal offset and is respectively D1 and D2.And stretch the inconsistent skew that causes, will have a strong impact on the precision of contraposition, if do not overcome the inconsistent problem of characteristic between the unstable or most thin-film transistors of the characteristic that will cause thin-film transistor.Span after it is heated because of different plastic bases again all can be the same, if overcome the relative offset problem, and according to the side-play amount of each plastic base, measured body and make the light shield that can revise this side-play amount, will cause the complexity of technology and raise the cost.
Summary of the invention
Technical problem to be solved by this invention provides a kind of method for fabricating thin film transistor and board structure, by at the substrate front side or the back side, make the mode of a self-contraposition light shield, the feasible self-aligned back-exposure that can carry out in the substrate, and with second layer electrode, just source electrode (source) and drain electrode (Drain) or grid (gate) expose to the sun and show to come, and so just need not change light shield design and Design of Driving System.Again because contraposition light shield of the present invention is made with metal material, with the channel of its definition semiconductor layer, except can avoiding the photoelectric current that causes backlight, also can be with the back light system that reflexes to backlight herein, therefore will utilize again after the light reflection, thereby make backlight efficiency obtain to promote.
With the projection-type light shield of script in order to manufacturing thin-film transistor source electrode and drain electrode, change with a self-contraposition light shield that directly is produced on the base material and replaced, has the characteristic of expanding with heat and contract with cold synchronously by self-contraposition light shield with base material, the position of source electrode that defines thin-film transistor (Source) that can self-contraposition and drain electrode (Drain), therefore make method for fabricating thin film transistor of the present invention, in the time of overcoming the film crystal pipe manufacturer, because of after high temperature causes base material flexible, the projection-type light shield can't precise definition go out the source electrode of thin-film transistor and the problem of drain locations.
For realizing above-mentioned purpose, the invention provides a kind of method of manufacturing thin film transistor, it comprises the following steps: a base material, and base material has one first plate face and one second plate face, in order to form a thin-film transistor, it has one source pole, a drain electrode and a grid on the first plate face; Form a non-transparent film on the second plate face; Non-transparent film is made into first light shield; Make grid on the first plate face; Make a transparent insulating layer on the grid and the first plate face; Make a transparent electrode layer on transparent insulating layer; Make a photoresistance on transparent electrode layer; Provide an exposure source in the second plate face side, by the effect of first light shield,, transparent electrode layer is produced source electrode and drain electrode again to define source electrode and drain locations; And make semi-conductor layer (activelayer), its setting and be electrically connected at source electrode and drain electrode between.
The present invention provides a kind of method for fabricating thin film transistor again, it comprises the following steps: a flexible base material, should have one first plate face and one second plate face by flexible base material, in order to form a thin-film transistor, it has one source pole, a drain electrode and a nontransparent grid on the first plate face; Produce nontransparent grid on the first plate face; Make a transparent insulating layer on the nontransparent grid and the first plate face; Make a transparent electrode layer on transparent insulating layer; Make a minus photoresistance on transparent electrode layer; Provide an exposure source in the second plate face side, define the channel width of thin-film transistor by nontransparent grid; Transparent electrode layer is produced source electrode and drain electrode; And the making semi-conductor layer, its setting and be electrically connected at source electrode and the drain electrode between.
In order to make above-mentioned method reach best effect, the present invention also provides a kind of board structure of thin-film transistor at last, and it is applied in the method for manufacturing thin film transistor, and it comprises: a base material, base material have one first plate face and one second plate face; An and self-contraposition light shield, it is arranged on the first plate face or the second plate face of base material, and should oneself's contraposition light shield, and it is non-in order on the plate face that forms this thin-film transistor to be arranged on this base material, and its position, area and shape are with the source electrode of this thin-film transistor and drain complementary or identical.
By enforcement of the present invention, at least can reach following progressive effect: one, can increase the technology yield, behind base material heated, can produce the characteristic of synchronous extension along with base material by self-contraposition light shield, therefore the alignment precision of thin-film transistor source electrode and drain electrode can be improved, therefore the technology yield can be increased.
Two, can improve utilance backlight, because self-contraposition light shield is a metallic film or a metal-oxide film, therefore when the backlight film group provides a back light, the effect of utilizing again after the light reflection can be produced, therefore the backlight liquid crystal display utilance can be promoted.
Three, obtain preferable characteristic of semiconductor, after the contraposition problem in the manufacture process is overcome, source electrode and drain electrode can be fabricated on correct position, and making can be more with consistency when semiconductor layer is made, thereby can obtain preferable characteristic of semiconductor.
Four, can reduce cost,, also can avoid stretching uneven problem, and must make the specific light shield of most tool correction offset functions, therefore can reduce cost in order to overcome base material except promoting the yield.
For making purpose of the present invention, structural feature and function thereof there are further understanding, cooperate related embodiment and graphic being described in detail as follows now:
Description of drawings
Fig. 1 is an existing OTFT, uses the allocation plan of plastic base as base material;
Fig. 2 is an existing plastic base, in film crystal technology, produces base material because of being heated and stretches inconsistent contrast figure;
Fig. 3 A is the enforcement illustration that is formed with a non-transparent film on the second plate face of a base material;
Fig. 3 B implements illustration for make one first light shield in the gold-tinted mode;
Fig. 3 C is after first light shield manufacture is finished, and base material is given enforcement illustration behind the reverse side;
Fig. 3 D is on the first plate face of base material, makes the enforcement illustration of a grid in the gold-tinted mode;
Fig. 3 E is the enforcement illustration after grid completes;
Fig. 3 F makes the enforcement illustration of a transparent insulating layer on the grid and the first plate face;
Fig. 3 G makes a transparent electrode layer to reach the enforcement illustration of making one minus photoresistance on transparent electrode layer on the transparent insulating layer;
Fig. 3 H provides the second plate face side of an exposure source at substrate, to define the enforcement illustration of thin-film transistor source electrode and drain locations;
Fig. 3 I is an enforcement illustration of a transparent insulating layer being produced source electrode and drain electrode;
Fig. 3 J is the enforcement illustration that forms semi-conductor layer between the source electrode of thin-film transistor and drain electrode;
Fig. 3 K is the method for manufacturing thin film transistor of first embodiment, after semiconductor layer completes, covers the enforcement illustration of layer protective layer again;
Fig. 4 is the embodiment flow chart of a kind of method for fabricating thin film transistor of the present invention;
Fig. 5 A is the enforcement illustration that is formed with a non-transparent film on the second plate face of a base material;
Fig. 5 B makes one second light shield in the gold-tinted mode to implement illustration;
Fig. 5 C is after second light shield manufacture is finished, and base material is given enforcement illustration behind the reverse side;
Fig. 5 D is on the first plate face of base material, makes the enforcement illustration of a transparent grid electrode in the gold-tinted mode.
Fig. 5 E is the enforcement illustration after transparent grid electrode completes;
Fig. 5 F makes the enforcement illustration of a transparent insulating layer on the transparent grid electrode and the first plate face;
Fig. 5 G makes a transparent electrode layer to reach the enforcement illustration of making one eurymeric photoresistance on transparent electrode layer on the transparent insulating layer;
Fig. 5 H provides the second plate face side of an exposure source at substrate, to define the enforcement illustration of thin-film transistor source electrode and drain locations;
Fig. 5 I is an enforcement illustration of semi-conductor layer being produced source electrode and drain electrode;
Fig. 5 J is the enforcement illustration that forms semi-conductor layer between the source electrode of thin-film transistor and drain electrode;
Fig. 5 K is the method for manufacturing thin film transistor of second embodiment, after semiconductor layer completes, covers the enforcement illustration of layer protective layer again;
Fig. 6 is the embodiment flow chart of a kind of method for fabricating thin film transistor of the present invention;
Fig. 7 A is formed with a nontransparent grid film to implement illustration on the first plate face of one base material;
Fig. 7 B is an enforcement illustration of nontransparent grid film being produced nontransparent grid in the gold-tinted mode;
Fig. 7 C is the enforcement illustration after non-transparent grid electrode completes;
Fig. 7 D makes the enforcement illustration of a transparent insulating layer on the nontransparent grid and the first plate face;
Fig. 7 E makes a transparent electrode layer to reach the enforcement illustration of making one minus photoresistance on transparent electrode layer on the transparent insulating layer;
Fig. 7 F provides the second plate face side of an exposure source at substrate, to define the enforcement illustration of thin-film transistor source electrode and drain locations;
Fig. 7 G be with transparent electrode layer produce source electrode and the drain electrode after the enforcement illustration;
Fig. 7 H is the enforcement illustration that forms semi-conductor layer between the source electrode of thin-film transistor and drain electrode;
Fig. 7 I is the method for manufacturing thin film transistor of the 3rd embodiment, after semiconductor layer completes, covers the enforcement illustration of layer protective layer again;
Fig. 8 is the embodiment flow chart of a kind of method of manufacturing thin film transistor of the present invention;
Fig. 9 is that first of self-contraposition light shield is implemented aspect figure;
Figure 10 is that second of self-contraposition light shield is implemented aspect figure;
Figure 11 is that the 3rd of self-contraposition light shield is implemented aspect figure.
Wherein, Reference numeral:
P02, P03, P05, P06 plastic base block numbering
A0, A8, G0, G8 plastic base element number
D1: vertical offset
D2: horizontal offset
10: base material
11: the first plate faces
12: the second plate faces
20: non-transparent film
21: the first light shields
22: the second light shields
23: the three light shields
24: the four light shields
25: the five light shields
26: self-contraposition light shield
30: photoresistance
40: the grid film
41: grid
42: the transparent grid electrode film
43: transparent grid electrode
44: nontransparent grid film
45: nontransparent grid
50: transparent insulating layer
60: transparent electrode layer
61: source electrode
62: drain electrode
70: the minus photoresistance
71: the eurymeric photoresistance
80: semiconductor layer
90: protective layer
91: exposure source
92: the contraposition district
M10, M20, M30 method for fabricating thin film transistor
S10 a: base material is provided
S11: form non-transparent film
S12: make first light shield
S13: make grid
S14: make transparent insulating layer
S15: make transparent electrode layer
S16: make the minus photoresistance
S17 a: exposure source is provided
S18: produce source electrode and drain electrode
S19: make semi-conductor layer
S20 a: base material is provided
S21: form non-transparent film
S22: make second light shield
S23: make a transparent grid electrode
S24: make transparent insulating layer
S25: make transparent electrode layer
S26: make the eurymeric photoresistance
S27 a: exposure source is provided
S28: produce source electrode and drain electrode
S29: make semi-conductor layer
S30 a: base material is provided
S31: produce nontransparent grid
S32: make transparent insulating layer
S33: make transparent electrode layer
S34: make the minus photoresistance
S35 a: exposure source is provided
S36: produce source electrode and drain electrode
S37: make semi-conductor layer
Embodiment
＜the first embodiment 〉
The method for fabricating thin film transistor of present embodiment (M10), be specially adapted to have the display of backlight module, in order to make backlight module can effectively provide the display display floater required light source, so method for fabricating thin film transistor (M10) of present embodiment, use with the source electrode 61 of thin-film transistor and drain 62 in the position, area and all become first light shield 21 of complementation in shape, be used minus photoresistance 70 again with the source electrode 61 that defines thin-film transistor and drain 62.
As shown in Figure 3A, be the enforcement illustration that is formed with a non-transparent film on the second plate face of a base material.Present embodiment at first provides one to make the required base material 10 of thin-film transistor, because base material 10 is a flat board, therefore all have one first plate face 11 and one second plate face 12, again on the first plate face 11 in order to formations-thin-film transistor, it has one source pole 61, one 62 and one grid 41 that drains.Non-at base material 10 then in order to make the plate faces of thin-film transistor, just on the second plate face 12, form a non-transparent film 20 in order to make first light shield 21.
Shown in Fig. 3 B, be the enforcement illustration of making one first light shield in the gold-tinted mode.It is on non-transparent film 20, form a photoresistance 30, use the 3rd light shield 23 then, through steps such as light shield, exposure, development, etching and removing photoresistances, to produce first light shield 21, the position of first light shield 21, area and shape are and the source electrode 61 of thin-film transistor and the 62 one-tenth complementations that drain again.When making thin-film transistor, because of action of high temperature will make base material 10 stretch thereupon, therefore and first light shield 21 is arranged on the base material 10, and can be along with the stretching, extension of base material 10 synchronous be flexible, and synchronous automatic contraposition goes out thin-film transistor source electrode 61 and 62 the effect of draining so can produce.
Shown in Fig. 3 C, be after first light shield manufacture is finished, base material is given enforcement illustration behind the reverse side.Shown in Fig. 3 D, be on the first plate face of base material, make the enforcement illustration of a grid in the gold-tinted mode.After first light shield 21 completes, then base material 10 is given reverse side, and the plate face behind reverse side, just form a grid film 40 on the first plate face 11.Then form a photoresistance 30 on grid film 40, use the 5th light shield 25 then, through steps such as light shield, exposure, development, etching and removing photoresistances, to produce grid 41.
Shown in Fig. 3 E, be the enforcement illustration after grid completes.Shown in Fig. 3 F, be to make the enforcement illustration of a transparent insulating layer on the grid and the first plate face.Shown in Fig. 3 G, be to make a transparent electrode layer to reach the enforcement illustration of making one minus photoresistance on transparent electrode layer on the transparent insulating layer.After grid 41 completes, then make a transparent insulating layer 50 on the grid 41 and the first plate face 11.Make a transparent electrode layer 60 then again on the transparent insulating layer 50 and make a minus photoresistance 70 again on transparent electrode layer 60.Because position, area and the shape of present embodiment first light shield 21 be and the source electrode 61 and the 62 one-tenth complementations that drain, so present embodiment are made source electrode 61 and the 62 employed photoresistances that drain use a minus photoresistance 70.
Shown in Fig. 3 H, provide the second plate face side of an exposure source, to define the enforcement illustration of thin-film transistor source electrode and drain locations at substrate.And shown in Fig. 3 I, be the enforcement illustration of a transparent insulating layer being produced source electrode and drain electrode.After 70 making of minus photoresistance finish, then provide an exposure source 91 in the second plate face, 12 sides, and by the effect of first light shield 21, same through steps such as overexposure, development, etching and removing photoresistances, transparent electrode layer 60 produced the source electrode 61 of thin-film transistor and to drain 62.
Shown in Fig. 3 J, be the enforcement illustration that between the source electrode of thin-film transistor and drain electrode, forms semi-conductor layer.When the source electrode 61 of thin-film transistor and drain 62 form after, at the source electrode 61 of thin-film transistor and drain and form the semiconductor film again on 62, and then on semiconductive thin film, form a photoresistance (figure of semiconductive thin film and photoresistance does not show).Pass through steps such as light shield, exposure, development, etching and removing photoresistance again, to produce semi-conductor layer 80, semiconductor layer 80 is arranged on the source electrode 61 of thin-film transistor and drains between 62 and with the source electrode 61 of thin-film transistor and drain and 62 electrically connect again.
As shown in Figure 4, be the embodiment flow chart of a kind of method for fabricating thin film transistor of the present invention.The method for fabricating thin film transistor of present embodiment (M10), it comprises the following steps: at first to provide a base material, and base material has one first plate face and one second plate face (step S10); Then form a non-transparent film on the second plate face of base material (step S11); Then non-transparent film is made into one first light shield, when the thin-film transistor on the first plate face of making, first light shield can be in order to an one source pole and a position (step S12) that drains that defines thin-film transistor; Make a grid again on the first plate face, it is arranged between the precalculated position of source electrode and drain electrode (S13); Make a transparent insulating layer again on the grid and the first plate face (step S14); Make a transparent electrode layer (step S15) on transparent insulating layer again; Make a minus photoresistance (step S16) on transparent insulating layer again; Then provide an exposure source in the second plate face side, can define source electrode and drain locations (step S17) by the effect of first light shield this moment; Then transparent electrode layer is produced source electrode and drain electrode (step S18); And the making semi-conductor layer, it is to be provided with and to be electrically connected between source electrode and the drain electrode (step S19).
＜the second embodiment 〉
The method for fabricating thin film transistor of present embodiment (M20), be specially adapted to reflective display, in order to increase the reflective surface area of display, so method for fabricating thin film transistor (M20) of present embodiment, be to use with the source electrode 61 of thin-film transistor and drain 62 in the position, area and be the second identical light shield 22 in shape, cooperate transparent grid electrode 43 again and use eurymeric photoresistance 71 with the source electrode 61 that defines thin-film transistor and drain 62.
Shown in Fig. 5 A, be the enforcement illustration that is formed with a non-transparent film on the second plate face of a base material.Present embodiment at first provides one to make the required base material 10 of thin-film transistor, because this base material 10 is a flat board, therefore all have one first plate face 11 and one second plate face 12, again on the first plate face 11 in order to forming a thin-film transistor, it has one source pole 61, a drain electrode 62 and one transparent grid electrode 43.Non-in order to make the plate face of thin-film transistor on this base material 10 then, just on the second plate face 12, form a non-transparent film 20 in order to make second light shield 22.
Shown in Fig. 5 B, be to make one second light shield in the gold-tinted mode to implement illustration.It is on non-transparent film 20, form a photoresistance 30, use the 4th light shield 24 then, through steps such as light shield, exposure, development, etching and removing photoresistances, to produce second light shield 22, the position of this second light shield 22, area and shape again are with the source electrode 61 of thin-film transistor and drain 62 identical.When making thin-film transistor, because of action of high temperature will make base material 10 stretch thereupon, and second light shield 22 is arranged on the base material 10, can be along with the stretching, extension of base material 10 synchronous flexible of dimension, and synchronous automatic contraposition goes out the source electrode 61 of thin-film transistor and 62 the effect of draining so can produce.
Shown in Fig. 5 C, be after second light shield manufacture is finished, base material is given enforcement illustration behind the reverse side.Shown in Fig. 5 D, be on the first plate face of base material, make the enforcement illustration of a transparent grid electrode in the gold-tinted mode.After second light shield 22 completes, then base material 10 is given reverse side, and the plate face behind this reverse side, just form a transparent grid electrode film 42 on the first plate face 11.Then form a photoresistance 30 on this transparent grid electrode film 42, use the 5th light shield 25 then, through steps such as light shield, exposure, development, etching and removing photoresistances, to produce this transparent grid electrode 43.
Shown in Fig. 5 E, be the enforcement illustration after transparent grid electrode completes.Shown in Fig. 5 F, be to make the enforcement illustration of a transparent insulating layer on the transparent grid electrode and the first plate face.Shown in Fig. 5 G, be to make a transparent electrode layer to reach the enforcement illustration of making one eurymeric photoresistance on transparent electrode layer on the transparent insulating layer.After transparent grid electrode 43 completes, then make a transparent insulating layer 50 on this transparent grid electrode 43 and this first plate face 11.Make a transparent electrode layer 60 then again on this transparent insulating layer 50 and make an eurymeric photoresistance 71 again on transparent electrode layer 60.Because position, area and the shape of present embodiment second light shield 22 are complementary with this source electrode 61 and 62 one-tenth of this drain electrodes, so present embodiment is made source electrode 61 and the 62 employed photoresistances that drain are to use an eurymeric photoresistance 71.
Shown in Fig. 5 H, provide the second plate face side of an exposure source, to define the enforcement illustration of thin-film transistor source electrode and drain locations at substrate.And shown in Fig. 5 I, be the enforcement illustration of semi-conductor layer being produced source electrode and drain electrode.After 71 making of eurymeric photoresistance finish, then provide an exposure source 91 in the second plate face, 12 sides, and by the effect of second light shield 22, same through steps such as overexposure, development, etching and removing photoresistances, transparent electrode layer 60 produced the source electrode 61 of thin-film transistor and to drain 62.
Shown in Fig. 5 J, be the enforcement illustration that between the source electrode of thin-film transistor and drain electrode, forms semi-conductor layer.When the source electrode 61 of thin-film transistor and drain 62 form after, at the source electrode 61 of thin-film transistor and drain and form the semiconductor film again on 62.And then on this semiconductive thin film, form a photoresistance (figure of semiconductive thin film and photoresistance does not show).Same steps such as process light shield, exposure, development, etching and removing photoresistance are to produce semi-conductor layer 80.
As shown in Figure 6, be the embodiment flow chart of a kind of method for fabricating thin film transistor of the present invention.The method for fabricating thin film transistor of present embodiment (M20), it comprises the following steps: at first to provide a base material, and this base material has one first plate face and one second plate face (step S20); Then form a non-transparent film on the second plate face of base material (step S21); Then this non-transparent film is made into one second light shield, when the thin-film transistor on the first plate face of making, this second light shield can be in order to an one source pole and a drain locations (step S22) that defines this thin-film transistor; Make a transparent grid electrode again on this first plate face (step S23); Make a transparent insulating layer on the first plate face of this transparent grid electrode and base material (step S24); Make a transparent electrode layer (step S25) on this transparent insulating layer; Make an eurymeric photoresistance (step S26) on this transparent electrode layer; Provide an exposure source in this second plate face side, pass through the effect of this second light shield again, to define this source electrode and this drain locations (step S27); This transparent electrode layer is produced this source electrode and this drain electrode (step S28); And the making semi-conductor layer, its setting and be electrically connected at this source electrode and this drain electrode between (step S29).
＜the three embodiment 〉
The method for fabricating thin film transistor of present embodiment (M30), also be to be useful in display with backlight module, be in order to make backlight module can effectively offer the required light source of display floater of display equally, but the method for fabricating thin film transistor of present embodiment, be that nontransparent grid 45 is used as a gate electrode and simultaneously in order to make source electrode 61 and 62 the self-contraposition light shield of draining uses, cooperate a minus photoresistance 70 with the source electrode 61 that defines thin-film transistor and drain 62 again.
Shown in Fig. 7 A, be to be formed with a nontransparent grid film on the first plate face of a base material to implement illustration.Present embodiment at first provides one to make the required base material 10 of thin-film transistor, then on a plate face of this base material 10, is formed with a nontransparent grid film 44.
Shown in Fig. 7 B, be the enforcement illustration of nontransparent grid film being produced nontransparent grid in the gold-tinted mode.It is on nontransparent grid film 44, forms a photoresistance 30, uses the 5th light shield 25 then, through steps such as light shield, exposure, development, etching and removing photoresistances, to produce nontransparent grid 45.
Shown in Fig. 7 C, be the enforcement illustration after non-transparent grid electrode completes.Shown in Fig. 7 D, be to make the enforcement illustration of a transparent insulating layer on the nontransparent grid and the first plate face.Shown in Fig. 7 E, be to make a transparent electrode layer to reach the enforcement illustration of making one minus photoresistance on transparent electrode layer on the transparent insulating layer.After nontransparent grid 45 completes, then make a transparent insulating layer 50 on this nontransparent grid 45 and this first plate face 11.Make a transparent electrode layer 60 then again on this transparent insulating layer 50 and make a minus photoresistance 70 again on transparent electrode layer 60.Because present embodiment is that nontransparent grid 45 is used as light shield, so present embodiment is made source electrode 61 and the 62 employed photoresistances that drain are to use a minus photoresistance 70.
Shown in Fig. 7 F, provide the second plate face side of an exposure source, to define the enforcement illustration of thin-film transistor source electrode and drain locations at substrate.And shown in Fig. 7 G, be with transparent electrode layer produce source electrode and the drain electrode after the enforcement illustration.After 70 making of minus photoresistance finish, then provide an exposure source 91 in the second plate face, 12 sides, the light shield effect of the nontransparent grid 45 of same process and steps such as exposure, development, etching and removing photoresistance are to produce transparent electrode layer 60 source electrode 61 of thin-film transistor and to drain 62.
Shown in Fig. 7 H, between the source electrode of thin-film transistor and drain electrode, form the enforcement illustration of semi-conductor layer.When the source electrode 61 of thin-film transistor and drain 62 form after, at the source electrode 61 of thin-film transistor and drain and 62 form the semiconductor film again.And then on this semiconductive thin film, form a photoresistance (figure of semiconductive thin film and photoresistance does not show).Same steps such as process light shield, exposure, development, etching and removing photoresistance can produce semi-conductor layer 80.
As shown in Figure 8, be embodiment flow chart for a kind of method of manufacturing thin film transistor of the present invention.The method of manufacturing thin film transistor of present embodiment (M30), it comprises the following steps: to provide a base material, and this base material has one first plate face and one second plate face (step S30); Produce a nontransparent grid on this first plate face (step S31); Make a transparent insulating layer on this nontransparent grid and this first plate face (step S32); Make a transparent electrode layer (step S33) on this transparent insulating layer; Make a minus photoresistance (step S34) on this transparent insulating layer; Provide an exposure source in this second plate face side, define the channel width (step S35) of this thin-film transistor by this non-grid; This transparent electrode layer is produced the one source pole and a drain electrode (step S36) of this thin-film transistor; And the making semi-conductor layer, it is to be provided with and to be electrically connected between this source electrode and this drain electrode (step S37).
＜the four embodiment 〉
The board structure of a kind of thin-film transistor of present embodiment, it is to be applied in the method for manufacturing thin film transistor, it comprises: a base material 10, this base material 10 have one first plate face 11 and one second plate face 12; And a self-contraposition light shield 26, it is arranged on this first plate face 11 or this second plate face 12.
When thin-film transistor is arranged on the first plate face 11, the self-contraposition light shield 26 of present embodiment then, it is non-in order to form a plate face of thin-film transistor to be arranged on base material, just be arranged on the second plate face 12, and self-contraposition light shield 26 has three kinds of different enforcement aspects with regard to its position, area and shape.As shown in Figure 9, implement aspect figure for first of self-contraposition light shield.The first self-contraposition light shield 26 of implementing aspect is one first light shield 21, and it is arranged on the plate face that is not provided with thin-film transistor, and its position, area and shape and the source electrode 61 of thin-film transistor and the 62 one-tenth complementations that drain.As shown in figure 10, implement aspect figure for second of self-contraposition light shield.Second kind of self-contraposition light shield 26 of implementing aspect is one second light shield 22, and it also is arranged on the plate face that is not provided with thin-film transistor, and its position, area and shape are with the source electrode 61 of thin-film transistor and drain 62 identical.As shown in figure 11, implement aspect figure for the 3rd of self-contraposition light shield.The third self-contraposition light shield 26 of implementing aspect is the nontransparent grid 45 of a thin-film transistor.
When making the employed board structure of thin-film transistor, when being formed with one first light shield 21 and second light shield 22 on its base material 10, because first light shield 21 and second light shield 22 are that a grid film 40 or a metal-oxide film are made, therefore when the backlight film group of display provides a back light, by the reflection of first light shield 21 and second light shield 22, can effectively promote the backlight liquid crystal display utilance.
＜comprehensive narration 〉
In above-mentioned first to fourth embodiment, the part that it is suitable for jointly will be described in further detail as follows:
Method of manufacturing thin film transistor of the various embodiments described above (M10, M20, M30) or board structure, it can be applicable in the general thin-film transistor technology, but mainly is to be applied in the technology of OTFT.
Method of manufacturing thin film transistor (M10, M20, M30) or board structure, its employed base material 10 can be a glass baseplate or a flexible base material.After so-called flexible base material is meant and is subjected to the physical factor effect, can cause base material 10 to produce significantly flexible phenomenon, its specific embodiment is a plastic basis material for example.Because behind the plastic basis material temperature influence, have tangible rising-heat contracting-cold phenomenon, therefore use first light shield 21, second light shield 22 and nontransparent grid 45, all can be in the flexible back of base material correct defines source electrode 61 and the function of 62 positions that drain, and therefore will more can manifest its progressive.
Method of manufacturing thin film transistor, wherein non-transparent film 20 can be a metallic film or a metal-oxide film.Wherein semiconductor layer 80 is one organic or an inorganic semiconductor material is made.Wherein transparent insulating layer 50 can be for one organic or an inorganic material is made, and this transparent insulating layer 50 can use mode of printing or inorganic deposition mode to be made again.Wherein semiconductor layer 80 is one organic or an inorganic semiconductor material is made again.
As Fig. 3 K, shown in Fig. 5 K and Fig. 7 I, the method for manufacturing thin film transistor for first and second and three embodiment after semiconductor layer completes, covers the enforcement illustration of layer protective layer again.When the thin-film transistor of the various embodiments described above, when being an OTFT, be subjected to the infringement of moisture for fear of organic substance, therefore can and drain on 62 at semiconductor layer 80, source electrode 61, further cover a protective layer 90.This protective layer 90 can be the macromolecule of combined double-layer or the protective layer 90 of an organic-inorganic mixture with oil for a water system macromolecule or a water system again, and its production method can use rotary coating or mode of printing to be made.
Certainly; the present invention also can have other various embodiments; under the situation that does not deviate from spirit of the present invention and essence thereof; those of ordinary skill in the art work as can make various corresponding changes and distortion according to the present invention, but these corresponding changes and distortion all should belong to the protection range in the appended claim of the present invention.
Claims (14)
1. a method of manufacturing thin film transistor is characterized in that, comprises the following steps:
One base material is provided, and this base material has one first plate face and one second plate face, and in order to form a thin-film transistor, it has one source pole, a drain electrode and a grid on this first plate face;
Form a non-transparent film on this second plate face;
This non-transparent film is made into a light shield;
Make this grid on this first plate face;
Make a transparent insulating layer on this grid and this first plate face;
Make a transparent electrode layer on this transparent insulating layer;
Make a photoresistance on this transparent electrode layer;
Provide an exposure source in this second plate face side, by the effect of this light shield,, again this transparent electrode layer is produced this source electrode and this drain electrode again to define this source electrode and this drain locations; And
Make semi-conductor layer, its setting and be electrically connected at this source electrode and this drain electrode between.
2. method of manufacturing thin film transistor according to claim 1 is characterized in that, this thin-film transistor is an OTFT.
3. method of manufacturing thin film transistor according to claim 1 is characterized in that, the position of this light shield, area and shape drain complementary with this source electrode and this.
4. method of manufacturing thin film transistor according to claim 1 is characterized in that, this transparent insulating layer uses printing or inorganic deposition mode to be made.
5. method of manufacturing thin film transistor according to claim 1 is characterized in that, this semiconductor layer is organic or an inorganic semiconductor material is made by one.
6. method of manufacturing thin film transistor according to claim 1 is characterized in that, in this semiconductor layer, this source electrode and this drain electrode, further is coated with a protective layer.
7. method of manufacturing thin film transistor according to claim 6 is characterized in that this protective layer is made with rotary coating or mode of printing.
8. a method of manufacturing thin film transistor is characterized in that, comprises the following steps:
One flexible base material is provided, and this flexible base material has one first plate face and one second plate face, and in order to form a thin-film transistor, it has one source pole, a drain electrode and a nontransparent grid on this first plate face;
Produce this nontransparent grid on this first plate face;
Make a transparent insulating layer on this nontransparent grid and this first plate face;
Make a transparent electrode layer on this transparent insulating layer;
Make a minus photoresistance on this transparent electrode layer;
Provide an exposure source in this second plate face side, define the channel width of this thin-film transistor by this nontransparent grid;
This transparent electrode layer is produced this source electrode and this drain electrode; And
Make semi-conductor layer, its setting and be electrically connected at this source electrode and this drain electrode between.
9. method of manufacturing thin film transistor according to claim 8 is characterized in that, this thin-film transistor is an OTFT.
10. method of manufacturing thin film transistor according to claim 8 is characterized in that, this transparent insulating layer uses printing or inorganic deposition mode to be made.
11. method of manufacturing thin film transistor according to claim 8 is characterized in that, in this semiconductor layer, this source electrode and this drain electrode, further is coated with a protective layer.
12. method of manufacturing thin film transistor according to claim 11 is characterized in that, this protective layer is made with rotary coating or mode of printing.
13. the board structure of a thin-film transistor, it is to be applied in the method for manufacturing thin film transistor, it is characterized in that, comprising:
One base material, this base material have one first plate face and one second plate face; And
One self-contraposition light shield, it is arranged on this first plate face or this second plate face, and should oneself's contraposition light shield, and it is non-in order on the plate face that forms this thin-film transistor to be arranged on this base material, and its position, area and shape are with the source electrode of this thin-film transistor and drain complementary or identical.
14. board structure according to claim 13 is characterized in that, this base material is a plastic basis material.
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| CN200510117613A CN100594592C (en) | 2005-11-02 | 2005-11-02 | thin film transistor manufacturing method and substrate structure |
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| US20050148123A1 (en) * | 2004-01-05 | 2005-07-07 | Huang Mao-Tsum | Method for fabricating self-aligned thin-film transistor |
| WO2005071753A1 (en) * | 2004-01-24 | 2005-08-04 | Koninklijke Philips Electronics N.V. | Transistor manufacture |
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| KR100304911B1 (en) * | 1993-12-30 | 2001-12-15 | 구본준, 론 위라하디락사 | Thin Film Transistor Manufacturing Method |
| US6380009B1 (en) * | 1999-03-27 | 2002-04-30 | U.S. Philips Corporation | Method of manufacturing thin film transistors |
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