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CN100595916C - Light emitting diode chip packaging structure with ceramic as substrate and manufacturing method thereof - Google Patents

Light emitting diode chip packaging structure with ceramic as substrate and manufacturing method thereof Download PDF

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Publication number
CN100595916C
CN100595916C CN 200710143495 CN200710143495A CN100595916C CN 100595916 C CN100595916 C CN 100595916C CN 200710143495 CN200710143495 CN 200710143495 CN 200710143495 A CN200710143495 A CN 200710143495A CN 100595916 C CN100595916 C CN 100595916C
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CN
China
Prior art keywords
emitting diode
light
diode chip
positive
ceramic
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Expired - Fee Related
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CN 200710143495
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Chinese (zh)
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CN101359655A (en
Inventor
汪秉龙
庄峰辉
陈家宏
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Harvatek Corp
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Harvatek Corp
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Priority to CN 200710143495 priority Critical patent/CN100595916C/en
Publication of CN101359655A publication Critical patent/CN101359655A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

A light emitting diode chip packaging structure using ceramic as a substrate comprises: the LED package comprises a ceramic substrate, a conductive unit, a hollow ceramic shell, a plurality of LED chips and a packaging colloid. The ceramic substrate has a body, a plurality of bumps, a plurality of through holes penetrating through the bumps, and a plurality of semi-through holes respectively formed on the side surface of the body and between every two bumps; the conductive unit is provided with a plurality of first conductive layers which are respectively formed on the surfaces of the bumps, a plurality of second conductive layers which are respectively formed on the inner surfaces of the semi-through holes and the bottom surface of the body, and a plurality of third conductive layers which are respectively filled in the through holes; the hollow ceramic shell is fixed on the top surface of the body to form an accommodating space; the light emitting diode chips are respectively arranged in the accommodating space; the packaging colloid is filled in the containing space.

Description

It with the pottery LED encapsulation construction of substrate and preparation method thereof
Technical field
The present invention is relevant for a kind of LED encapsulation construction and preparation method thereof, refers to that especially a kind of is the LED encapsulation construction and preparation method thereof of substrate with the pottery.
Background technology
See also shown in Figure 1ly, be the generalized section of known vertically standing LED chip-packaging structure.By among the figure as can be known, known vertically standing LED chip-packaging structure comprises: a dielectric base 1a, a conduction rack 2a, a light-emitting diode chip for backlight unit 3a and a fluorescent colloid 4a.
Wherein, this conduction rack 2a has two the conductive connecting pin 20a, the 21a that prolong the two opposition side springs folding secondary of this dielectric base 1a respectively, electrically contact so that the lower surface of these conductive connecting pins 20a, 21a can produce with a circuit board 5a, and this conductive connecting pin 20a, 21a have a positive electrode zone 200a and a negative electrode area 210a respectively.
Moreover, this light-emitting diode chip for backlight unit 3a has a positive electricity end 300a and the extreme 310a of a negative electricity, and this light-emitting diode chip for backlight unit 3a is set directly on this conductive connecting pin 20a, so that direct the generation with the positive electrode zone 200a of this conductive connecting pin 20a of this positive electricity end 300a electrically contacts, and the extreme 310a of negative electricity of this light-emitting diode chip for backlight unit 3a sees through the negative electrode area 210a generation electric connection of a lead 6a and this conductive connecting pin 21a.
At last, this fluorescent colloid 4a covers on this light-emitting diode chip for backlight unit 3a, to protect this light-emitting diode chip for backlight unit 3a.By this, known vertically standing LED chip-packaging structure can produce the upwards illumination effect of light projector (as shown by arrows).
See also Fig. 2 and shown in Figure 3, it is respectively the schematic perspective view of known side formula LED encapsulation construction and the 3-3 profile of Fig. 2.By among the figure as can be known, known side formula LED encapsulation construction comprises: a dielectric base 1b, a conduction rack 2b, a light-emitting diode chip for backlight unit 3b and a fluorescent colloid 4b.
Wherein, this conduction rack 2b has two the conductive connecting pin 20b, the 21b that bend secondary respectively along the side of this dielectric base 1b, electrically contact so that the side end face of these conductive connecting pins 20b, 21b can produce with a circuit board 5b, and this conductive connecting pin 20b, 21b have a positive electrode zone 200b and a negative electrode area 210b respectively.
Moreover, this light-emitting diode chip for backlight unit 3b has a positive electricity end 300b and the extreme 310b of a negative electricity, and this light-emitting diode chip for backlight unit 3b is set directly on this conductive connecting pin 20b, so that direct the generation with the positive electrode zone 200b of this conductive connecting pin 20b of this positive electricity end 300b electrically contacts, and the extreme 310b of negative electricity of this light-emitting diode chip for backlight unit 3b sees through the negative electrode area 210b generation electric connection of a lead 6b and this conductive connecting pin 21b.
At last, this fluorescent colloid 4b covers on this light-emitting diode chip for backlight unit 3b, to protect this light-emitting diode chip for backlight unit 3b.By this, known side formula LED encapsulation construction can produce the illumination effect of side direction light projector (shown in the arrow of Fig. 3).
Yet these conductive connecting pins 20a of above-mentioned vertical type and side formula LED encapsulation construction, 21a, 20b, 21b must could produce with circuit board 5a, 5b through bending and contact, and therefore increase the complexity of processing procedure.
So as from the foregoing, known package structure for LED obviously has inconvenience and exists with disappearance, and waits to be improved at present.
Therefore, the improving of the above-mentioned disappearance of inventor's thoughts, and according to the correlation experience of being engaged in for many years in this respect, the concentrated observation and research, and cooperate the utilization of scientific principle, and propose a kind of reasonable in design and effectively improve the present invention of above-mentioned disappearance.
Summary of the invention
Technical problem to be solved by this invention, being to provide a kind of is the LED encapsulation construction and preparation method thereof of substrate with the pottery, its advantage is: can be by the mode of any shaping, conductive layer is formed on the ceramic substrate, and then through ceramic co-fired technology (Low-TemperatureCofired Ceramics, LTCC), the hollow ceramic housing is fixed on this ceramic substrate, so the present invention needs to use conduction rack and will could produce electric connection with circuit board through bending unlike known.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present invention, providing a kind of is the LED encapsulation construction of substrate with the pottery, and it comprises: a ceramic substrate, a conductive unit, a hollow ceramic housing, a plurality of light-emitting diode chip for backlight unit, an and packing colloid.Wherein, this ceramic substrate has a body, a plurality of be separated from each other and respectively from the extended projection of the end face of this body, a plurality of through hole that runs through these corresponding projections respectively, and a plurality of chadlesses that are formed at respectively between this body side and per two projections.
Moreover, this conductive unit has a plurality of first conductive layer in these lug surfaces, a plurality of second conductive layer in the bottom surface of the inner surface of these chadlesses and this body, and a plurality of the 3rd conductive layers of filling full these through holes respectively of being formed separately of being formed separately, and wherein the 3rd conductive layer is electrically connected between this first conductive layer and this second conductive layer.
In addition, this hollow ceramic housing is fixed on the end face of body of this ceramic substrate forming an accommodation space, and this accommodation space exposes the end face of these first conductive layers.These light-emitting diode chip for backlight unit are arranged at respectively in this accommodation space, and the positive and negative electrode end of each light-emitting diode chip for backlight unit is electrically connected at the first different conductive layers respectively.This packing colloid is filled in this accommodation space, to cover these light-emitting diode chip for backlight unit.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present invention, providing a kind of is the manufacture method of the LED encapsulation construction of substrate with the pottery, it comprises: at first, one ceramic substrate is provided, and it has a body, a plurality of be separated from each other and respectively from the extended projection of the end face of this body, a plurality of through hole that runs through these corresponding projections respectively, and a plurality of chadlesses that are formed at respectively between this body side and per two projections; Then, be formed separately a plurality of first conductive layers, and be formed separately the bottom surface of a plurality of second conductive layers in inner surface and this body of these chadlesses in the surface of these projections.
Next, fill full a plurality of the 3rd conductive layers respectively in these through holes, to be electrically connected between this first conductive layer and this second conductive layer; And then, fix a hollow ceramic housing on the end face of the body of this ceramic substrate forming an accommodation space, and this accommodation space exposes the end face of these first conductive layers; Then, a plurality of light-emitting diode chip for backlight unit are set respectively in this accommodation space, and the positive and negative electrode end of each light-emitting diode chip for backlight unit is electrically connected at the first different conductive layers respectively; At last, fill a packing colloid in this accommodation space, to cover these light-emitting diode chip for backlight unit.
Therefore, the present invention sees through cooperatively interacting of these through holes and these conductive layers (this first conductive layer, second conductive layer, and the 3rd conductive layer), so that the present invention need not see through the bending conduction rack, can produce with circuit board and electrically connects.That is the present invention sees through and fills the 3rd conductive layer in this through hole, with the conduction bridge as (or between this light-emitting diode chip for backlight unit and circuit board) between this first conductive layer and this second conductive layer.So the present invention has the advantage of simplifying processing procedure and reducing cost of manufacture.
Reach technology, means and the effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet appended graphic reference and the explanation usefulness of only providing not is to be used for the present invention is limited.
Description of drawings
Fig. 1 is the generalized section of known vertically standing LED chip-packaging structure;
Fig. 2 is the schematic perspective view of known side formula LED encapsulation construction;
Fig. 3 is the 3-3 profile of Fig. 2;
Fig. 4 is the flow chart of first embodiment of manufacture method of the LED encapsulation construction of substrate with the pottery for the present invention;
Fig. 5 A to Fig. 5 C is the making schematic flow sheet of first embodiment of manufacture method of the LED encapsulation construction of substrate with the pottery for the present invention;
Fig. 6 is the front-view schematic diagram of first embodiment of the LED encapsulation construction of substrate with the pottery for the present invention;
Fig. 7 is the schematic side view of first kind of set-up mode of the light-emitting diode chip for backlight unit of first embodiment of the invention;
Fig. 8 is the schematic side view of second kind of set-up mode of the light-emitting diode chip for backlight unit of first embodiment of the invention;
Fig. 9 is the schematic side view of the third set-up mode of the light-emitting diode chip for backlight unit of first embodiment of the invention; And
Figure 10 is the schematic side view of the 4th kind of set-up mode of light-emitting diode chip for backlight unit of the present invention.
The primary clustering symbol description
One, known
Dielectric base 1a
Conduction rack 2a conductive connecting pin 20a, 21a
Positive electrode zone 200a
Negative electrode area 210a
Light-emitting diode chip for backlight unit 3a positive electricity end 300a
The extreme 310a of negative electricity
Fluorescent colloid 4a
Circuit board 5a
Lead 6a
Dielectric base 1b
Conduction rack 2b conductive connecting pin 20b, 21b
Positive electrode zone 200b
Negative electrode area 210b
Light-emitting diode chip for backlight unit 3b positive electricity end 300b
The extreme 310b of negative electricity
Fluorescent colloid 4b
Circuit board 5b
Lead 6b
Two, the present invention
Ceramic substrate 1 body 10
Projection 11
Through hole 12
Chadless 13
First conductive layer, 2 anodal conductive parts 20
Negative pole conductive part 21
First conductive layer 2 ' anodal conductive part 20 '
Negative pole conductive part 21 '
First conductive layer 2 " anodal conductive part 20 "
Negative pole conductive part 21 "
Second conductive layer, 3 bottom surface pins 30
The 3rd conductive layer 4
Hollow ceramic housing 5 accommodation spaces 50
Light-emitting diode chip for backlight unit 6 positive electricity ends 60
Negative electricity extreme 61
Light-emitting diode chip for backlight unit 6 ' positive electricity end 60 '
Negative electricity is extreme 61 '
Light-emitting diode chip for backlight unit 6 " positive electricity end 60 "
Negative electricity extreme 61 "
Lead 7,7 '
Tin ball 7 "
Packing colloid 8
Light-emitting diode chip for backlight unit 9 positive electricity ends 90
Negative electricity extreme 91
Projection 92
Lead 93
Anodal conductive part 94
Negative pole conductive part 95
Embodiment
See also Fig. 4 to shown in Figure 6, Fig. 4 is the flow chart of first embodiment; Fig. 5 A to Fig. 5 C is the making schematic flow sheet of first embodiment; Fig. 6 is the front-view schematic diagram of first embodiment.By in the flow chart of Fig. 4 as can be known, the invention provides a kind of is the manufacture method of the LED encapsulation construction of substrate with the pottery, it comprises: at first, cooperate Fig. 5 A and shown in Figure 6, one ceramic substrate 1 is provided, and it has a body 10, a plurality of be separated from each other and respectively from the extended projection 11 of the end face of this body 10, a plurality of through hole 12 that runs through these corresponding projections 11 respectively, and a plurality of chadlesses 13 (S100) that are formed at respectively between these body 10 sides and per two projections.Wherein, each through hole 12 is to tilt to each corresponding chadless 13 by each corresponding projection 11.That is each through hole 12 forms a ramp way, to be communicated between each corresponding projection 11 and each the corresponding chadless 13.
Next, be formed separately a plurality of first conductive layers 2, and be formed separately the bottom surface (S102) of a plurality of second conductive layers 3, to form a plurality of bottom surfaces pin 30 in inner surface and this body 10 of these chadlesses 13 in the surface of these projections 11; Then, fill full a plurality of the 3rd conductive layers 4 respectively in these through holes 12, to be electrically connected between this first conductive layer 2 and this second conductive layer 3 (S104).
Then, cooperate Fig. 5 B and shown in Figure 6, fix a hollow ceramic housing 5 on the end face of the body 10 of this ceramic substrate 1 to form an accommodation space 50, and this accommodation space 50 exposes the end face (S106) of these first conductive layers 2, wherein the body 10 of this ceramic substrate 1 is two cuboids that cooperatively interact with this hollow ceramic housing 5, and this hollow ceramic housing 5 is to utilize ceramic co-fired technology (Low-Temperature Cofired Ceramics, LTCC), on the end face with the body 10 that is fixed in this ceramic substrate 1.
Next, cooperate Fig. 5 C and shown in Figure 6, a plurality of light-emitting diode chip for backlight unit 6 are set respectively in this accommodation space 50, and the positive and negative electrode end of each light-emitting diode chip for backlight unit 6 is electrically connected at the first different conductive layers 2 (S108) respectively, wherein the positive and negative electrode end of each light-emitting diode chip for backlight unit 6 can see through two leads 7, to be electrically connected at the first different conductive layers 2 respectively; At last, fill a packing colloid 8 in this accommodation space 50, to cover these light-emitting diode chip for backlight unit 6 (S110).By this, see through this accommodation space 50 mode up, allow the bottom surface pin 31 of these second conductive layers 3 be contacted with a circuit board (figure does not show), light projector (shown in the arrow of Fig. 6) so that LED encapsulation construction of the present invention can make progress in upright mode.
See also shown in Figure 7ly, be the schematic side view of first kind of set-up mode of the light-emitting diode chip for backlight unit of first embodiment of the invention.By among the figure as can be known, these first conductive layers 2 are divided into a plurality of anodal conductive parts 20 and negative pole conductive part 21, and the positive and negative electrode end 60,61 of this light-emitting diode chip for backlight unit 6 is arranged at the upper surface of each light-emitting diode chip for backlight unit 6 respectively; By this, see through the mode of routing (wire-bounding), so that the positive and negative electrode end of each light-emitting diode chip for backlight unit 6 60,61 sees through two leads 7 respectively and is electrically connected at adjacent anodal conductive part 20 and negative pole conductive part 21.
See also shown in Figure 8ly, be the schematic side view of second kind of set-up mode of the light-emitting diode chip for backlight unit of first embodiment of the invention.By among the figure as can be known, the a plurality of anodal conductive parts 20 of these first conductive layers 2 ' be divided into ' and negative pole conductive part 21 ', and this light-emitting diode chip for backlight unit 6 ' positive and negative electrode end 60 ', 61 ' respectively be arranged at each light-emitting diode chip for backlight unit 6 ' lower surface and upper surface; By this, see through the mode of routing (wire-bounding), so that each light-emitting diode chip for backlight unit 6 ' the corresponding anodal conductive part 20 of positive electricity end 60 ' directly be electrically connected at ', and each light-emitting diode chip for backlight unit 6 ' negative electricity extreme 61 ' then see through a lead 7 ' and be electrically connected at corresponding negative pole conductive part 21 '.
See also shown in Figure 9ly, be the schematic side view of the third set-up mode of the light-emitting diode chip for backlight unit of first embodiment of the invention.By among the figure as can be known, these first conductive layers 2 " are divided into a plurality of anodal conductive parts 20 " and negative pole conductive part 21 ", and the lower surface of this light-emitting diode chip for backlight unit 6 " positive and negative electrode end 60 ", 61 " being arranged at each light-emitting diode chip for backlight unit 6 respectively "; By this, see through the mode cover crystalline substance (flip-chip), " positive and negative electrode end 60 ", 61 " seeing through a plurality of corresponding tin balls 7 respectively " so that each light-emitting diode chip for backlight unit 6 and be electrically connected at adjacent anodal conductive part 20 " and negative pole conductive part 21 ".
See also shown in Figure 10ly, be the schematic side view of the 4th kind of set-up mode of light-emitting diode chip for backlight unit of the present invention.By among the figure as can be known, the positive and negative electrode end 90,91 of this light-emitting diode chip for backlight unit 9 is arranged at the upper surface of each light-emitting diode chip for backlight unit 9 respectively, and each light-emitting diode chip for backlight unit 9 is arranged at respectively between per two projections 92; By this, see through the mode of routing (wire-bounding), so that the positive and negative electrode end of each light-emitting diode chip for backlight unit 9 90,91 sees through two leads 93 respectively and is electrically connected at adjacent anodal conductive part 94 and negative pole conductive part 95.
In sum, the invention has the advantages that: can these first, second and third conductive layers 2,3,4 be formed on this ceramic substrate 1 by the mode of any shaping; And then through ceramic co-fired technology (Low-Temperature Cofired Ceramics, LTCC), hollow ceramic housing 5 is fixed on this ceramic substrate 1, so the present invention needs to use conduction rack and will could produce electric connection with circuit board through bending unlike known.
Therefore, the present invention sees through cooperatively interacting of these through holes 12 and these conductive layers (this first conductive layer 2, second conductive layer 3, and the 3rd conductive layer 4), so that the present invention need not see through the bending conduction rack, can produce with circuit board and electrically connects.That is the present invention sees through and fills the 3rd conductive layer 4 in this through hole 12, with the conduction bridge as (or between this light-emitting diode chip for backlight unit 6 and circuit board) between this first conductive layer 2 and this second conductive layer 3.So the present invention has the advantage of simplifying processing procedure and reducing cost of manufacture.
But, the above, only be the detailed description of the specific embodiment of the best of the present invention and graphic, and feature of the present invention is not limited thereto, and is not that all scopes of the present invention should be as the criterion with claim in order to restriction the present invention, all closing in the embodiment of the spirit variation similar of the present patent application claim with it, all should be contained in the category of the present invention, anyly be familiar with this skill person in the field of the invention, can think easily and variation or modify and all can be encompassed in claim of the present invention.

Claims (21)

1、一种以陶瓷为基板的发光二极管芯片封装结构，其特征在于，包括：1. A light-emitting diode chip packaging structure using ceramics as a substrate, characterized in that it includes: 一陶瓷基板，其具有一本体、复数个彼此分开且分别从该本体的顶面延伸出的凸块、复数个分别贯穿该等相对应凸块的贯穿孔、及复数个分别形成于该本体侧面及每两个凸块之间的半穿孔；A ceramic substrate, which has a body, a plurality of bumps separated from each other and extending from the top surface of the body, a plurality of through holes respectively penetrating the corresponding bumps, and a plurality of holes formed on the side of the body And the half-perforation between every two bumps; 一导电单元，其具有复数个分别成形于该等凸块表面的第一导电层、复数个分别成形于该等半穿孔的内表面及该本体的底面的第二导电层、及复数个分别填充满该等贯穿孔的第三导电层，其中该第三导电层电性连接于该第一导电层与该第二导电层之间；A conductive unit, which has a plurality of first conductive layers respectively formed on the surface of the bumps, a plurality of second conductive layers respectively formed on the inner surface of the semi-perforated holes and the bottom surface of the body, and a plurality of respectively filled a third conductive layer filled with the through holes, wherein the third conductive layer is electrically connected between the first conductive layer and the second conductive layer; 一中空陶瓷壳体，其固定于该陶瓷基板的本体的顶面上以形成一容置空间，并且该容置空间曝露出该等第一导电层的顶面；a hollow ceramic shell, which is fixed on the top surface of the main body of the ceramic substrate to form an accommodating space, and the accommodating space exposes the top surfaces of the first conductive layers; 复数个发光二极管芯片，其分别设置于该容置空间内，并且每一个发光二极管芯片的正、负电极端分别电性连接于不同的第一导电层；以及a plurality of light emitting diode chips, which are respectively arranged in the accommodating space, and the positive and negative electrodes of each light emitting diode chip are respectively electrically connected to different first conductive layers; and 一封装胶体，其填充于该容置空间内，以覆盖该等发光二极管芯片。A packaging colloid is filled in the accommodating space to cover the LED chips. 2、如权利要求1所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：每一个贯穿孔是由每一个相对应的第一导电层倾斜至每一个相对应的第二导电层。2. The light-emitting diode chip packaging structure using ceramics as a substrate according to claim 1, wherein each through hole is inclined from each corresponding first conductive layer to each corresponding second conductive layer . 3、如权利要求1所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该本体与该中空陶瓷壳体为两个相互配合的长方体。3. The ceramic-based light-emitting diode chip packaging structure as claimed in claim 1, wherein the body and the hollow ceramic shell are two cuboids that cooperate with each other. 4、如权利要求1所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该第一导电层、该第二导电层、及该第三导电层皆为银膏层(silver paste layer)。4. The light-emitting diode chip packaging structure using ceramics as a substrate according to claim 1, wherein the first conductive layer, the second conductive layer, and the third conductive layer are all silver paste layers. layer). 5、如权利要求1所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该容置空间朝向上方，以使得该本体底面的第二导电层接触于一电路板。5. The ceramic-based light-emitting diode chip packaging structure as claimed in claim 1, wherein the accommodating space faces upwards so that the second conductive layer on the bottom surface of the main body contacts a circuit board. 6、如权利要求1所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该等第一导电层分成复数个正极导电部及负极导电部。6. The ceramic-based light-emitting diode chip packaging structure as claimed in claim 1, wherein the first conductive layers are divided into a plurality of positive conductive parts and negative conductive parts. 7、如权利要求6所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的上表面；藉此，透过打线(wire-bounding)的方式，以使得每一个发光二极管芯片的正、负电极端分别透过两导线而电性连接于相邻的正极导电部及负极导电部。7. The ceramic-based light-emitting diode chip packaging structure as claimed in claim 6, characterized in that: the positive and negative electrodes of the light-emitting diode chip are respectively arranged on the upper surface of each light-emitting diode chip; Wire-bounding is used so that the positive and negative electrodes of each LED chip are electrically connected to the adjacent positive and negative conductive parts through two wires respectively. 8、如权利要求6所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的下表面与上表面；藉此，透过打线(wire-bounding)的方式，以使得每一个发光二极管芯片的正电极端直接电性连接于相对应的正极导电部，并且每一个发光二极管芯片的负电极端则透过一导线而电性连接于相对应的负极导电部。8. The ceramic-based light-emitting diode chip packaging structure as claimed in claim 6, characterized in that: the positive and negative electrode terminals of the light-emitting diode chip are respectively arranged on the lower surface and the upper surface of each light-emitting diode chip; thereby , through wire-bounding, so that the positive electrode terminal of each light-emitting diode chip is directly electrically connected to the corresponding positive electrode conductive part, and the negative electrode terminal of each light-emitting diode chip is passed through a wire And electrically connected to the corresponding negative electrode conductive part. 9、如权利要求6所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的下表面；藉此，透过覆晶(flip-chip)的方式，以使得每一个发光二极管芯片的正、负电极端分别透过复数个相对应的锡球而电性连接于相邻的正极导电部及负极导电部。9. The ceramic-based light-emitting diode chip packaging structure as claimed in claim 6, characterized in that: the positive and negative electrodes of the light-emitting diode chip are respectively arranged on the lower surface of each light-emitting diode chip; A flip-chip method is used so that the positive and negative electrodes of each LED chip are electrically connected to the adjacent positive and negative conductive parts through a plurality of corresponding solder balls. 10、如权利要求6所述的以陶瓷为基板的发光二极管芯片封装结构，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的上表面，并且每一个发光二极管芯片分别设置于每二个凸块之间；藉此，透过打线(wire-bounding)的方式，以使得每一个发光二极管芯片的正、负电极端分别透过两导线而电性连接于相邻的正极导电部及负极导电部。10. The ceramic-based light-emitting diode chip packaging structure according to claim 6, characterized in that: the positive and negative electrodes of the light-emitting diode chip are respectively arranged on the upper surface of each light-emitting diode chip, and each light-emitting diode The chips are respectively arranged between every two bumps; thereby, through wire-bounding, the positive and negative electrodes of each light-emitting diode chip are electrically connected to the phase through two wires respectively. Adjacent positive electrode conductive part and negative electrode conductive part. 11、一种以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于，包括下列步骤：11. A method for manufacturing a light-emitting diode chip packaging structure using ceramics as a substrate, characterized in that it comprises the following steps: 提供一陶瓷基板，其具有一本体、复数个彼此分开且分别从该本体的顶面延伸出的凸块、复数个分别贯穿该等相对应凸块的贯穿孔、及复数个分别形成于该本体侧面及每两个凸块之间的半穿孔；A ceramic substrate is provided, which has a body, a plurality of bumps separated from each other and respectively extending from the top surface of the body, a plurality of through holes respectively penetrating through the corresponding bumps, and a plurality of holes respectively formed in the body Half perforations on the sides and between every two lugs; 分别成形复数个第一导电层于该等凸块的表面，并且分别成形复数个第二导电层于该等半穿孔的内表面及该本体的底面；respectively forming a plurality of first conductive layers on the surfaces of the bumps, and forming a plurality of second conductive layers on the inner surfaces of the semi-perforated holes and the bottom surface of the body; 分别填充满复数个第三导电层于该等贯穿孔内，以电性连接于该第一导电层及该第二导电层之间；respectively filling a plurality of third conductive layers in the through holes to be electrically connected between the first conductive layer and the second conductive layer; 固定一中空陶瓷壳体于该陶瓷基板的本体的顶面上以形成一容置空间，并且该容置空间曝露出该等第一导电层的顶面；fixing a hollow ceramic shell on the top surface of the body of the ceramic substrate to form an accommodating space, and the accommodating space exposes the top surfaces of the first conductive layers; 分别设置复数个发光二极管芯片于该容置空间内，并且每一个发光二极管芯片的正、负电极端分别电性连接于不同的第一导电层；以及A plurality of light-emitting diode chips are respectively arranged in the accommodating space, and the positive and negative electrodes of each light-emitting diode chip are respectively electrically connected to different first conductive layers; and 填充一封装胶体于该容置空间内，以覆盖该等发光二极管芯片。Filling an encapsulant in the accommodating space to cover the LED chips. 12、如权利要求11所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：每一个贯穿孔是由每一个相对应的第一导电层倾斜至每一个相对应的第二导电层。12. The method for manufacturing a ceramic-based light-emitting diode chip packaging structure according to claim 11, wherein each through hole is inclined from each corresponding first conductive layer to each corresponding first conductive layer. Two conductive layers. 13、如权利要求11所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该本体与该中空陶瓷壳体为两个相互配合的长方体。13. The method for manufacturing a ceramic-based light-emitting diode chip packaging structure as claimed in claim 11, wherein the main body and the hollow ceramic shell are two rectangular parallelepipeds that cooperate with each other. 14、如权利要求11所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该第一导电层、该第二导电层、及该第三导电层皆为银膏层(silver paste layer)。14. The method of manufacturing a ceramic-based light-emitting diode chip packaging structure as claimed in claim 11, wherein the first conductive layer, the second conductive layer, and the third conductive layer are all silver paste layers (silver paste layer). 15、如权利要求11所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该容置空间以朝上的方式，以使得该本体底面的第二导电层接触于一电路板。15. The method for manufacturing a ceramic-based light-emitting diode chip packaging structure as claimed in claim 11, wherein the accommodating space is facing upward so that the second conductive layer on the bottom surface of the main body is in contact with a circuit board. 16、如权利要求11所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该等第一导电层分成复数个正极导电部及负极导电部。16. The method for manufacturing a ceramic-based LED chip packaging structure as claimed in claim 11, wherein the first conductive layers are divided into a plurality of positive conductive parts and negative conductive parts. 17、如权利要求16所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的上表面；藉此，透过打线(wire-bounding)的方式，以使得每一个发光二极管芯片的正、负电极端分别透过两导线而电性连接于相邻的正极导电部及负极导电部。17. The method for manufacturing a LED chip packaging structure using ceramics as a substrate according to claim 16, characterized in that: the positive and negative electrodes of the LED chip are respectively arranged on the upper surface of each LED chip; thereby , through wire-bounding, so that the positive and negative electrodes of each LED chip are electrically connected to the adjacent positive and negative conductive parts through two wires respectively. 18、如权利要求16所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的下表面与上表面；藉此，透过打线(wire-bounding)的方式，以使得每一个发光二极管芯片的正电极端直接电性连接于相对应的正极导电部，并且每一个发光二极管芯片的负电极端则透过一导线而电性连接于相对应的负极导电部。18. The method for manufacturing a ceramic-based light-emitting diode chip packaging structure as claimed in claim 16, characterized in that: the positive and negative electrodes of the light-emitting diode chip are respectively arranged on the lower surface and the upper surface of each light-emitting diode chip ; In this way, through wire-bounding, the positive electrode terminal of each light-emitting diode chip is directly electrically connected to the corresponding positive electrode conductive part, and the negative electrode terminal of each light-emitting diode chip is transparent. It is electrically connected to the corresponding negative electrode conductive part through a wire. 19、如权利要求16所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的下表面；藉此，透过覆晶(flip-chip)的方式，以使得每一个发光二极管芯片的正、负电极端分别透过复数个相对应的锡球而电性连接于相邻的正极导电部及负极导电部。19. The method for manufacturing a ceramic-based light-emitting diode chip packaging structure as claimed in claim 16, characterized in that: the positive and negative electrodes of the light-emitting diode chip are respectively arranged on the lower surface of each light-emitting diode chip; thereby , through flip-chip (flip-chip), so that the positive and negative electrodes of each light-emitting diode chip are electrically connected to the adjacent positive and negative conductive parts through a plurality of corresponding solder balls. . 20、如权利要求16所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该发光二极管芯片的正、负电极端分别设置于每一个发光二极管芯片的上表面，并且每一个发光二极管芯片分别设置于每二个凸块之间；藉此，透过打线(wire-bounding)的方式，以使得每一个发光二极管芯片的正、负电极端分别透过两导线而电性连接于相邻的正极导电部及负极导电部。20. The method for manufacturing a ceramic-based LED chip packaging structure as claimed in claim 16, characterized in that: the positive and negative electrodes of the LED chip are respectively arranged on the upper surface of each LED chip, and each A light-emitting diode chip is respectively arranged between every two bumps; thereby, through the way of wire-bounding, the positive and negative electrodes of each light-emitting diode chip are electrically connected through two wires respectively. Connect to the adjacent positive and negative conductive parts. 21、如权利要求11所述的以陶瓷为基板的发光二极管芯片封装结构的制作方法，其特征在于：该中空陶瓷壳体是利用陶瓷共烧技术(Low-Temperature Cofired Ceramics，LTCC)，以固定于该陶瓷基板的本体的顶面上。21. The method for manufacturing the LED chip packaging structure using ceramics as the substrate as claimed in claim 11, characterized in that: the hollow ceramic shell uses ceramic co-firing technology (Low-Temperature Cofired Ceramics, LTCC) to fix on the top surface of the body of the ceramic substrate.
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